Electrostatic chuck and substrate processing device

Abstract

The invention provides an electrostatic chuck capable of improving in-plane uniformity of temperature of a substrate and a substrate processing apparatus. The electrostatic chuck includes: a dielectric layer having a substrate supporting surface, the substrate supporting surface having a plurality of dot-shaped protrusions and an annular protrusion surrounding the plurality of dot-shaped protrusions, the annular protrusion having an inner peripheral wall extending along a first circle and an entire circumference in a plan view, and an outer peripheral wall extending along a second circle and an entire circumference in a plan view; the outer peripheral wall has an arc portion extending along a portion of a second circle larger than the first circle in plan view, and a cutout portion extending linearly between both ends of the arc portion in plan view. And a chuck electrode layer disposed in the dielectric layer so as to overlap the entire circumference of the annular protrusion in plan view.

Description

Technical Field

[0001] The invention relates to an electrostatic chuck and a substrate processing device. Background Art

[0002] Patent document 1 discloses an electrostatic suction cup that electrostatically adsorbs a substrate that has been dry-etched, the electrostatic suction cup having a substrate holding portion having an electrostatic adsorption surface having a shape similar to that of the substrate, the substrate holding portion comprising: an annular groove formed along the edge of the electrostatic adsorption surface; a recess formed along the annular groove in a portion of the electrostatic adsorption surface surrounded by the annular groove; a first inlet hole formed in the center of the bottom surface of the recess for introducing a heat transfer gas into the recess; and a plurality of second inlet holes formed along the edge of the bottom surface of the recess for introducing a heat transfer gas into the recess.

[0003] Patent document 2 discloses an electrostatic chuck, characterized in that it includes: a ceramic dielectric substrate, which is a polycrystalline ceramic sintered body, having a first main surface on which a processing object is placed and a second main surface on the opposite side of the first main surface; and an electrode layer, which is arranged between the first main surface and the second main surface of the ceramic dielectric substrate and sintered integrally to the ceramic dielectric substrate, the electrode layer including a plurality of electrode elements arranged at intervals from each other, and when viewed in a direction orthogonal to the first main surface, the outer periphery of the ceramic dielectric substrate is processed so that the interval between the outer periphery of the ceramic dielectric substrate and the outer periphery of the electrode layer is uniform, and when viewed in the above direction, the interval between the outer periphery of the electrode layer and the outer periphery of the ceramic dielectric substrate is smaller than the interval between the plurality of electrode elements.

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Publication No. 2012-234904

[0007] Patent Document 2: Japanese Patent Application Publication No. 2015-88743 Summary of the invention

[0008] Technical problem to be solved by the invention

[0009] In one aspect, the present invention provides an electrostatic chuck and a substrate processing apparatus for improving the in-plane uniformity of the temperature of a substrate.

[0010] Technical solutions for solving technical problems

[0011] In order to solve the above-mentioned technical problems, according to one embodiment, an electrostatic chuck is provided, comprising: a dielectric layer having a substrate supporting surface, the substrate supporting surface having a plurality of point-like protrusions and an annular protrusion surrounding the plurality of point-like protrusions, the annular protrusion having an inner peripheral wall and an outer peripheral wall, the inner peripheral wall extending along a first circle throughout the entire circumference when viewed from above, the outer peripheral wall having an arc portion extending along a portion of a second circle larger than the first circle when viewed from above, and a notch portion extending linearly between both ends of the arc portion when viewed from above; and a chuck electrode layer arranged in the dielectric layer in such a manner as to overlap with the annular protrusion throughout the entire circumference when viewed from above.

[0012] Effects of the Invention

[0013] According to one aspect, it is possible to provide an electrostatic chuck and a substrate processing apparatus that improve the in-plane uniformity of the temperature of a substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 This is an example of a diagram for explaining a configuration example of a capacitive coupling type plasma processing apparatus.

[0015] Figure 2 This is an example of a top view of the electrostatic chuck according to the first embodiment.

[0016] Figure 3 This is an example of a partially enlarged cross-sectional view of the main body of the substrate support portion.

[0017] Figure 4 This is an example of a top view of an electrostatic chuck of a reference example.

[0018] Figure 5 This is an example of analysis results of the temperature distribution of the substrate supported by the electrostatic chuck according to the first embodiment.

[0019] Figure 6 This is an example of the analysis result of the temperature distribution of the substrate supported by the electrostatic chuck of the reference example.

[0020] Figure 7 This is an example of the analysis result of the temperature distribution of a substrate supported by an electrostatic chuck.

[0021] Figure 8 This is an example of the analysis result of the temperature distribution of a substrate supported by an electrostatic chuck.

[0022] Fig. 9 This is an example of a partially enlarged plan view of the electrostatic chuck according to the first embodiment.

[0023] Fig.10 This is an example of a partially enlarged plan view of the electrostatic chuck according to the second embodiment.

[0024] Fig.11 This is an example of a partially enlarged plan view of the electrostatic chuck according to the third embodiment.

[0025] Fig.12 This is an example of a partially enlarged plan view of the electrostatic chuck according to the fourth embodiment.

[0026] Fig.13 This is an example of a partially enlarged top view of the electrostatic chuck according to the fifth embodiment. DETAILED DESCRIPTION

[0027] Hereinafter, each exemplary embodiment will be described in detail with reference to the accompanying drawings. In addition, in each of the drawings, the same reference numerals are given to the same or corresponding parts.

[0028] [Plasma treatment system]

[0029] Hereinafter, a configuration example of a plasma processing system will be described. Figure 1 This is an example of a diagram for explaining a configuration example of a capacitive coupling type plasma processing apparatus (substrate processing apparatus) 1.

[0030] The plasma processing system includes a capacitively coupled plasma processing apparatus 1 and a control unit 2. The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. In addition, the plasma processing apparatus 1 includes a substrate support unit 11 and a gas introduction unit. The gas introduction unit is configured to be able to introduce at least one processing gas into the plasma processing chamber 10. The gas introduction unit includes a showerhead 13. The substrate support unit 11 is arranged in the plasma processing chamber 10. The showerhead 13 is arranged above the substrate support unit 11. In one embodiment, the showerhead 13 constitutes at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, the side wall 10a of the plasma processing chamber 10, and the substrate support unit 11. The plasma processing chamber 10 has: at least one gas supply port for supplying at least one processing gas to the plasma processing space 10s; and at least one gas exhaust port for exhausting gas from the plasma processing space 10s. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10 .

[0031] The substrate support portion 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting a substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 when viewed from above. The substrate W is arranged on the central region 111a of the main body 111, and the ring assembly 112 is arranged on the annular region 111b of the main body 111 in a manner of surrounding the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also referred to as a substrate support surface for supporting the substrate W, and the annular region 111b is also referred to as a ring support surface for supporting the ring assembly 112.

[0032] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive component. The conductive component of the base 1110 can function (play a role) as a lower electrode. The electrostatic chuck 1111 is arranged on the base 1110. The electrostatic chuck 1111 includes a ceramic component (dielectric layer) 1111a and an electrostatic electrode (also called an electrostatic electrode layer, an electrostatic chuck electrode layer, and a chuck electrode layer) 1111b arranged in the ceramic component 1111a. The ceramic component 1111a has a central area 111a. In one embodiment, the ceramic component 1111a also has an annular area 111b. In addition, other components surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck and an annular insulating component, may also have an annular area 111b. In this case, the ring assembly 112 may be arranged on the annular electrostatic chuck or the annular insulating component, or on both the electrostatic chuck 1111 and the annular insulating component. In addition, at least one RF / DC electrode coupled to the RF (Radio Frequency) power supply 31 and / or the DC (Direct Current) power supply 32 described later may also be arranged in the ceramic component 1111a. In this case, at least one RF / DC electrode functions as a lower electrode. In the case where the bias RF signal and / or DC signal described later is supplied to at least one RF / DC electrode, the RF / DC electrode is also referred to as a bias electrode. In addition, the conductive component of the base 1110 and at least one RF / DC electrode may also function as multiple lower electrodes. In addition, the electrostatic electrode 1111b may function as a lower electrode. Therefore, the substrate support portion 11 includes at least one lower electrode.

[0033] The ring assembly 112 includes one or more ring-shaped components. In one embodiment, the one or more ring-shaped components include one or more edge rings and at least one cover ring. The edge ring is formed of a conductive material or an insulating material, and the cover ring is formed of an insulating material.

[0034] In addition, the substrate support portion 11 may also include a temperature adjustment module, which is configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112 and the substrate W to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow path 1110a or a combination thereof. A heat transfer fluid such as brine or gas flows in the flow path 1110a. In one embodiment, the flow path 1110a is formed in the base 1110, and one or more heaters are arranged in the ceramic component 1111a of the electrostatic chuck 1111. In addition, the substrate support portion 11 may also include a heat transfer gas supply portion, which is configured to supply a heat transfer gas to the gap between the back side of the substrate W and the central area 111a.

[0035] The shower head 13 is configured to be able to introduce at least one processing gas from the gas supply part 20 into the plasma processing space 10s. The shower head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b and a plurality of gas introduction ports 13c. The processing gas supplied to the gas supply port 13a is introduced into the plasma processing space 10s from the plurality of gas introduction ports 13c through the gas diffusion chamber 13b. In addition, the shower head 13 includes at least one upper electrode. In addition, in addition to the shower head 13, the gas introduction part may also include one or more side gas injection parts (SGI: Side Gas Injector) installed in one or more openings formed in the side wall 10a.

[0036] The gas supply unit 20 may also include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one processing gas from the respectively corresponding gas source 21 to the shower head 13 via the respectively corresponding flow controller 22. Each flow controller 22 may also include, for example, a mass flow controller or a pressure-controlled flow controller. In addition, the gas supply unit 20 may also include one or more flow modulation devices for modulating or pulsing the flow of at least one processing gas.

[0037] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. Thus, plasma can be formed from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of a plasma generating unit, which is configured to generate plasma from one or more processing gases in the plasma processing chamber 10. In addition, by supplying a bias RF signal to at least one lower electrode, a bias potential can be generated on the substrate W, and ion components in the formed plasma can be introduced into the substrate W.

[0038] In one embodiment, the RF power supply 31 includes a first RF generator 31a and a second RF generator 31b. The first RF generator 31a is configured to be coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit, and is capable of generating a generation source RF signal (generation source RF power) for plasma generation. In one embodiment, the generation source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generator 31a may also be configured to generate a plurality of generation source RF signals having different frequencies. The generated one or more generation source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0039] The second RF generating unit 31b is configured to be coupled to at least one lower electrode via at least one impedance matching circuit, and is capable of generating a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the generating source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the generating source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100kHz to 60MHz. In one embodiment, the second RF generating unit 31b may also be configured to generate a plurality of bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In addition, in each embodiment, at least one of the generating source RF signal and the bias RF signal may also be pulsed.

[0040] In addition, the power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generating unit 32a and a second DC generating unit 32b. In one embodiment, the first DC generating unit 32a is connected to at least one lower electrode and is configured to generate a first DC signal. The generated first bias DC signal is applied to at least one lower electrode. In one embodiment, the second DC generating unit 32b is connected to at least one upper electrode and is configured to generate a second DC signal. The generated second DC signal is applied to at least one upper electrode.

[0041] In various embodiments, at least one of the first and second DC signals may also be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulse may have a pulse waveform of a rectangle, a trapezoid, a triangle, or a combination thereof. In one embodiment, a waveform generator for generating a sequence of voltage pulses from a DC signal is connected between the first DC generator 32a and at least one lower electrode. Therefore, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. In the case where the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulse may have a positive polarity or a negative polarity. In addition, the sequence of voltage pulses may also include one or more positive polarity voltage pulses and one or more negative polarity voltage pulses in one cycle. In addition, in addition to the RF power supply 31, the first and second DC generators 32a, 32b may be provided, or the first DC generator 32a may be provided instead of the second RF generator 31b.

[0042] The exhaust system 40 can be connected to the gas exhaust port 10e provided at the bottom of the plasma processing chamber 10, for example. The exhaust system 40 can also include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s can be adjusted by the pressure regulating valve. The vacuum pump can include a turbomolecular pump, a dry pump, or a combination thereof.

[0043] The control unit 2 processes computer executable commands that cause the plasma processing device 1 to perform the various steps described in this specification. The control unit 2 can be configured to control the various elements of the plasma processing device 1 so that the various steps described herein are performed. In one embodiment, a part or all of the control unit 2 can be included in the plasma processing device 1. The control unit 2 can include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 can be implemented, for example, by a computer 2a. The processing unit 2a1 can be configured to perform various control actions by reading a program from the storage unit 2a2 and executing the read program. The program can be stored in the storage unit 2a2 in advance, or it can be obtained via a medium when necessary. The obtained program is stored in the storage unit 2a2, and is read and executed from the storage unit 2a2 by the processing unit 2a1. The medium can be various storage media readable by the computer 2a, or it can be a communication line connected to the communication interface 2a3. The processing unit 2a1 can be a CPU (central processing unit). The storage unit 2a2 may include a RAM (Random Access Memory), a ROM (Read Only Memory), a HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may also communicate with the plasma processing device 1 via a communication line such as a LAN (Local Area Network).

[0044] [Electrostatic chuck 1111]

[0045] Next, use Figure 2 and Figure 3 The electrostatic chuck 1111 according to the first embodiment will be described. Figure 2 This is an example of a top view of the electrostatic chuck 1111 according to the first embodiment. Figure 3 This is an example of a partially enlarged cross-sectional view of the main body portion 111 of the substrate support portion 11 .

[0046] The ceramic member (dielectric layer) 1111a of the electrostatic chuck 1111 (see Figure 1 ) has: a substrate support surface (central area 111a) for supporting substrate W and a ring support surface (annular area 111b) for supporting ring assembly 112. In addition, the substrate support surface (central area 111a) of electrostatic chuck 1111 has: a downcut surface 111a1, a plurality of dispersed dot-shaped protrusions 111a2, and an annular protrusion 111a3 surrounding the plurality of dot-shaped protrusions 111a2. The plurality of dot-shaped protrusions 111a2 are an example of a plurality of protrusions dispersed inside annular protrusion 111a3.

[0047] The hollowed-down surface 111a1 is a surface hollowed down from the upper surface of the dot-shaped protrusion 111a2 (the surface that abuts against and supports the back surface of the substrate W) and the upper surface of the annular protrusion 111a3 (the surface that abuts against and supports the back surface of the substrate W). The hollowed-down surface 111a1 is a surface that is spaced apart from and faces the back surface of the substrate W when the substrate W is placed on the electrostatic chuck 1111. An opening (not shown) for discharging a heat transfer gas such as He gas supplied from a heat transfer gas supply unit may be provided on the hollowed-down surface 111a1.

[0048] In addition, on the substrate supporting surface (central region 111a) of the electrostatic chuck 1111, there are formed dot-shaped protrusions 111a2 and annular protrusions 111a3 that protrude upward from the undercut surface 111a1.

[0049] The dot-shaped protrusions 111a2 protrude from the undercut surface 111a1 and are formed into a substantially cylindrical shape. The upper surface of the dot-shaped protrusions 111a2 is a circular surface. When the electrostatic chuck 1111 is viewed from above (see Figure 2 ), a plurality of dot-shaped protrusions 111a2 are formed inside the annular protrusion 111a3. When the substrate W is placed on the electrostatic chuck 1111, the upper surface of the dot-shaped protrusions 111a2 contacts the back surface of the substrate W, and the dot-shaped protrusions 111a2 support the substrate W. In addition, Figure 2 The shape (size), arrangement, and number of the dot-shaped protrusions 111 a 2 shown are merely examples and are not limited thereto.

[0050] The annular protrusion 111a3 protrudes from the undercut surface 111a1 and is formed in an annular shape along the outer periphery of the central region 111a. When the substrate W is placed on the electrostatic chuck 1111, the upper surface of the annular protrusion 111a3 contacts the back surface of the substrate W, and the annular protrusion 111a3 supports the substrate W.

[0051] In addition, when the annular protrusion 111a3 supports the substrate W by the electrostatic chuck 1111, a space (gap) is formed by the back side of the substrate W, the undercut surface 111a1 of the electrostatic chuck 1111, and the inner peripheral wall 111a5 of the annular protrusion 111a3. The heat transfer gas supply unit supplies the heat transfer gas to the space (gap) through the opening formed in the undercut surface 111a1. In addition, the annular protrusion 111a3 functions as a sealing band that seals the heat transfer gas by contacting with the outer edge of the back side of the substrate W and adhering to it by electrostatic adsorption.

[0052] In addition, the annular protrusion 111a3 has an outer peripheral wall 111a4 and an inner peripheral wall 111a5. The outer peripheral wall 111a4 is formed from the outer peripheral side end of the upper surface (support surface of substrate W) of the annular protrusion 111a3 to the ring support surface (annular area 111b). The inner peripheral wall 111a5 is formed from the inner peripheral side end of the upper surface (support surface of substrate W) of the annular protrusion 111a3 to the undercut surface 111a1.

[0053] The peripheral wall 111a4 has: an arc portion 111a41 which is a part of a circle when viewed from above; and a notch portion (straight line portion) 111a42 which is a straight line cut from the circle when viewed from above. Here, an orientation flat for indicating the crystal orientation is formed on the substrate W. Figure 2 In the example shown, the outer peripheral shape of the substrate supporting surface supporting the substrate W corresponds to the orientation plane of the substrate W and is formed with a notch portion 111a42 cut from a circle into a straight line when viewed from above (i.e., a notch portion 111a42 obtained by forming a notch from a circle).

[0054] On the other hand, the inner peripheral wall 111a5 is formed in a circular shape over the entire circumference when viewed from above. In one embodiment, the inner peripheral wall 111a5 extends over the entire circumference along the first circle C1 when viewed from above. In one embodiment, the outer peripheral wall 111a4 has: an arc portion 111a41, which extends along a portion of a second circle C2 larger than the first circle C1 when viewed from above; and a notch portion 111a42, which extends linearly between the two ends of the arc portion 111a41 when viewed from above. In addition, the first circle C1 overlaps with the inner peripheral wall 111a5 when viewed from above, but Figure 2 In the figure, the first circle C1 shown by the double-dashed line is offset inward in the radial direction. In addition, when viewed from above, the second circle C2 overlaps with the arc portion 111a41 of the outer peripheral wall 111a4, but Figure 2 In the figure, the second circle C2 indicated by the two-dot chain line is shown shifted radially outward.

[0055] In addition, the annular protrusion 111a3 has a first width W11 from the outer peripheral wall 111a4 to the inner peripheral wall 111a5 in the arc portion 111a41. That is, the first width W11 is the radial width between the outer peripheral wall 111a4 and the inner peripheral wall 111a5. In the arc portion 111a41, the first width W11 is constant.

[0056] The annular protrusion 111a3 has a second width W12 from the outer peripheral wall 111a4 to the inner peripheral wall 111a5 in the circumferential center of the notch 111a42. That is, the second width W12 is the radial width of the outer peripheral wall 111a4 and the inner peripheral wall 111a5.

[0057] In addition, in the notch portion 111a42, the radial width of the outer peripheral wall 111a4 and the inner peripheral wall 111a5 has a width that gradually decreases (decreases) from the outer region in the circumferential direction of the notch portion 111a42 to the central region in the circumferential direction of the notch portion 111a42. In addition, in the central region in the circumferential direction of the notch portion 111a42, the radial width between the outer peripheral wall 111a4 and the inner peripheral wall 111a5 has a second width W12 that is the minimum value.

[0058] In addition, the first width W11 is larger than the second width W12. Specifically, the first width W11 is preferably in the range of 1 to 10 times the second width W12. In addition, the first width W11 is preferably in the range of 1 mm to 10 mm.

[0059] The electrostatic electrode 1111b is disposed on the ceramic member (dielectric layer) 1111a (refer to Figure 1 ) Figure 3 As shown, the ceramic component 1111a has a lower ceramic component 1111a1, an intermediate annular ceramic component 1111a2 and an upper ceramic component 1111a3. The lower ceramic component 1111a1 is arranged below the electrostatic electrode 1111b. The upper ceramic component 1111a3 is arranged above the electrostatic electrode 1111b. The intermediate annular ceramic component 1111a2 surrounds the electrostatic electrode 1111b and is arranged between the upper ceramic component 1111a3 and the lower ceramic component 1111a1. In addition, the ceramic component 1111a may also be formed integrally. In addition, the lower ceramic component 1111a1, the intermediate annular ceramic component 1111a2 and the upper ceramic component 1111a3 may be formed of the same material or different materials. In addition, the electrostatic electrode 1111b is provided at a position higher than the ring supporting surface (annular region 111b) and is provided at a position lower than the undercut surface 111a1 of the substrate supporting surface (central region 111a).

[0060] In addition, if Figure 2 As shown, the electrostatic electrode 1111b is roughly circular when viewed from above, and the outer edge of the electrostatic electrode 1111b is located radially outward of the inner peripheral wall 111a5 and radially inward of the outer peripheral wall 111a4 when viewed from above. Therefore, the electrostatic electrode (suction cup electrode layer) 1111b is arranged in the ceramic component (dielectric layer) 1111a in such a way that it overlaps with the annular protrusion 111a3 throughout the entire circumference when viewed from above. As a result, the outer edge of the back side of the substrate W is adsorbed throughout the entire circumference. As a result, the outer edge of the back side of the substrate W is in close contact with the upper surface of the annular protrusion 111a3 throughout the entire circumference, sealing the heat transfer gas.

[0061] Here, using Figure 4 An electrostatic chuck 1111C of a reference example is described. Figure 4This is an example of a top view of an electrostatic chuck 1111C of a reference example.

[0062] Figure 4 The electrostatic chuck 1111C of the reference example shown in FIG. Figure 2 Compared with the electrostatic chuck 1111 of the first embodiment shown in the figure, the shape of the annular protrusion 111a3 is different. The other structures are the same, and the repeated description is omitted.

[0063] In addition, the annular protrusion 111a3 of the electrostatic chuck 1111C of the reference example has an outer peripheral wall 111a4 and an inner peripheral wall 111a6. The outer peripheral wall 111a4 has an arc portion 111a41 that is a part of a circle when viewed from above and a notch portion 111a42 that is cut from a circle when viewed from above. In addition, the inner peripheral wall 111a6 has an arc portion 111a61 that is a part of a circle when viewed from above and a straight line portion 111a62 that is cut from a circle when viewed from above (i.e., a straight line portion 111a62 that is formed by removing a part from a circle).

[0064] The annular protrusion 111a3 has a third width W21, which is the width of the arc portion 111a41 of the outer peripheral wall 111a4 and the arc portion 111a61 of the inner peripheral wall 111a6, at the arc portion 111a41. In addition, the annular protrusion 111a3 has a fourth width W22, which is the radial width of the notch portion 111a42 of the outer peripheral wall 111a4 and the straight portion 111a62 of the inner peripheral wall 111a6, at the central area in the circumferential direction of the notch portion 111a42. In addition, the third width W21 and the fourth width W22 are the same width. That is, the radial width of the upper surface of the annular protrusion 111a3 is the same throughout the entire circumference.

[0065] Next, use Figures 5 to 8 The in-plane uniformity of the temperature of the substrate W will be described. Figure 5 This is an example of analysis results of the temperature distribution of the substrate W supported by the electrostatic chuck 1111 according to the first embodiment. Figure 6 This is an example of the analysis result of the temperature distribution of the substrate W supported by the electrostatic chuck 1111C of the reference example. Here, plasma is generated in the plasma processing space 10s, and heat is input from the plasma to the substrate W. Moreover, the analysis result of the temperature of the substrate W is shown by taking the case where heat is dissipated from the substrate W to the substrate support part 11 as an example. In addition, Figure 5 and Figure 6 In FIG. 1 , the temperature of the substrate W is shown by the shades of the dotted shadows. Figure 5 and Figure 6 As shown by the arrow, the darker the point shadow, the higher the temperature. Figure 5 and Figure 6An example of the analysis result is shown in which the distance from the center of the substrate W in the radial direction of the substrate W is in the range of 125 mm to 150 mm and the vicinity of the central area of ​​the circumferential direction of the substrate W from the center of the substrate W to the notch 111a42. Figure 5 and Figure 6 In FIG. 4 , the boundary line 411 is a line passing through the central area of ​​the notch portion 111a42 in the circumferential direction from the center of the substrate W. In addition, the boundary line 412 is a line passing through the arc portion 111a41 from the center of the substrate W. The boundary line 420 indicates the outer periphery of the substrate W. In addition, in the analysis, the substrate W is not formed with an orientation flat portion but is formed in a circular shape.

[0066] First, the substrate W supported by the electrostatic chuck 1111C of the reference example is described. When the substrate W is adsorbed on the electrostatic chuck 1111C, the contact pressure between the substrate W and the electrostatic chuck 1111C becomes high at the position in contact with the upper surface of the dot-shaped protrusion 111a2 and the inner peripheral side of the upper surface of the annular protrusion 111a3 (near the edge of the inner peripheral wall 111a5 and the upper surface of the annular protrusion 111a3). In addition, as Figure 4 As shown in FIG. 1 , in the electrostatic chuck 1111C of the reference example, the straight portion 111a62 is formed at a position radially inward of the arc portion 111a61. Figure 6 As shown, near the notch portion 111a42 of the annular protrusion 111a3 (near the boundary line 411), a region where the temperature becomes high is formed on the outer peripheral side of the substrate W. That is, as shown by comparing the temperature distribution on the boundary line 411 with the temperature distribution on the boundary line 412, at the outer edge of the substrate W, the uniformity of the circumferential temperature decreases.

[0067] Next, the substrate W supported by the electrostatic chuck 1111 of the first embodiment is described. When the substrate W is adsorbed on the electrostatic chuck 1111, the contact pressure between the substrate W and the electrostatic chuck 1111 becomes high at the position in contact with the upper surface of the dot-shaped protrusion 111a2 and the inner peripheral side of the upper surface of the annular protrusion 111a3 (near the edge of the inner peripheral wall 111a5 and the upper surface of the annular protrusion 111a3). In addition, as Figure 2 As shown in FIG. 1 , in the electrostatic chuck 1111 of the first embodiment, the inner peripheral wall 111a5 is formed in a circular shape. Figure 5 As shown by comparing the temperature distribution on the boundary line 411 and the temperature distribution on the boundary line 412, the uniformity of the temperature in the circumferential direction is improved.

[0068] Figure 7 and Figure 8 This is an example of the analysis result of the temperature distribution of the substrate W supported by the electrostatic chucks 1111 and 1111C. Figure 7 and Figure 8, represents a line ( Figure 5 and Figure 6 The temperature distribution of substrate W on the boundary line 411 shown in the figure. That is, the horizontal axis represents the radial distance (Radius (radius) (mm)) from the center of substrate W. The vertical axis represents the temperature (Temp (deg (degrees Celsius))). In addition, the solid line represents an example of the temperature distribution of substrate W supported by the electrostatic chuck 1111 of the first embodiment. The dotted line represents an example of the temperature distribution of substrate W supported by the electrostatic chuck 1111C of the reference example. In addition, Figure 7 is Figure 5 and Figure 6 The curve diagram of the analyzed radius distance ranges from 125mm to 150mm. Figure 8 Yes Figure 7 The curve is enlarged in the range of radius distance from 140mm to 150mm.

[0069] like Figure 7 and Figure 8 As shown, according to the electrostatic chuck 1111 of the first embodiment, the temperature rise on the outer peripheral side of the orientation flat surface portion of the substrate W can be suppressed as compared with the electrostatic chuck 1111C of the reference example.

[0070] Fig. 9 This is an example of a partially enlarged top view of the electrostatic chuck 1111 according to the first embodiment.

[0071] When viewed from above, the outer periphery of the electrostatic electrode 1111b has an arc portion 1111b1 and a straight portion 1111b2. The straight portion 1111b2 extends linearly between the notch portion 111a42 of the outer peripheral wall 111a4 and the inner peripheral wall 111a5 when viewed from above. As a result, the radial distance between the outer periphery of the electrostatic electrode 1111b and the outer peripheral wall 111a4 of the annular protrusion 111a3 is formed to be constant throughout the entire circumference. That is, the thickness ( Figure 3 The thickness in the horizontal direction of the intermediate annular ceramic component 1111a2 shown is formed to be constant. In addition, the radial distance between the outer peripheral edge of the electrostatic electrode 1111b and the outer peripheral wall 111a4 of the annular protrusion 111a3 is preferably in the range of 0.1mm to 5.0mm. Thereby, the insulation of the electrostatic electrode 1111b can be ensured. In one embodiment, the radial distance between the notch portion 111a42 of the outer peripheral wall 111a4 when viewed from above and the outer peripheral edge of the electrostatic electrode (suction cup electrode layer) 1111b is smaller than the radial distance between the arc portion 111a41 of the outer peripheral wall 111a4 and the outer peripheral edge of the ceramic component (dielectric layer) 1111a.

[0072] In addition, the structure of the electrostatic chuck 1111 is not limited to Figure 2 and Fig. 9 The structure shown.

[0073] Fig.10 This is an example of a partially enlarged top view of the electrostatic chuck 1111 according to the second embodiment.

[0074] The outer peripheral wall 111a4 has an arc portion 111a41 which is a part of a circle when viewed from above and a notch portion (notch portion) 111a43 which is a notch formed from the circle when viewed from above. Here, a notch for indicating the crystal orientation is formed in the substrate W. Fig.10 In the example shown, the outer peripheral shape of the substrate supporting surface supporting the substrate W corresponds to the notch of the substrate W and is formed with a notch portion 111a43 that is notched from a circle toward the inside when viewed from above. In addition, when viewed from above, the outer peripheral edge of the electrostatic electrode 1111b has an arc portion 1111b1 and a straight line portion 1111b2. Among them, the distance between the outer peripheral edge of the electrostatic electrode 1111b and the outer peripheral wall 111a4 of the annular protrusion 111a3 is preferably not less than 0.1mm and not more than 5.0mm. In this way, the insulation of the electrostatic electrode 1111b can be ensured. Other structures and Figure 2 and Fig. 9 The electrostatic chuck 1111 shown in the first embodiment is the same, and repeated description is omitted.

[0075] Fig.11 This is an example of a partially enlarged top view of the electrostatic chuck 1111 according to the third embodiment.

[0076] The outer periphery of the electrostatic electrode 1111b is formed into a circle throughout the entire circumference when viewed from above. That is, the outer periphery of the electrostatic electrode (suction cup electrode layer) 1111b extends along the third circle C3 between the first circle C1 and the second circle C2 throughout the entire circumference when viewed from above. As a result, the radial distance between the outer periphery of the electrostatic electrode 1111b and the inner peripheral wall 111a5 of the annular protrusion 111a3 is formed to be constant throughout the entire circumference. That is, when viewed from above, the width of the overlap between the upper surface of the annular protrusion 111a3 and the electrostatic electrode 1111b is formed to be constant throughout the entire circumference. In addition, the distance between the outer periphery of the electrostatic electrode 1111b and the inner peripheral wall 111a5 of the annular protrusion 111a3 is preferably in the range of 0 mm to 10.0 mm. In addition, the radial distance between the outer periphery of the electrostatic electrode 1111b and the notch portion 111a42 of the outer peripheral wall 111a4 of the annular protrusion 111a3 is preferably greater than 0.1 mm. Thus, the insulation of the electrostatic electrode 1111b can be ensured. Figure 2 and Fig. 9 The electrostatic chuck 1111 shown in the first embodiment is the same, and repeated description is omitted.

[0077] Fig.12 This is an example of a partially enlarged top view of the electrostatic chuck 1111 according to the fourth embodiment.

[0078] The outer peripheral wall 111a4 has: an arc portion 111a41 that is a part of a circle when viewed from above, and a notch portion 111a43 that is a notch formed in the circle when viewed from above. The outer peripheral edge of the electrostatic electrode 1111b is formed into a circle throughout the entire circumference when viewed from above. As a result, the distance between the outer peripheral edge of the electrostatic electrode 1111b and the inner peripheral wall 111a5 of the annular protrusion 111a3 is formed to be constant. That is, when viewed from above, the width of the overlap between the upper surface of the annular protrusion 111a3 and the electrostatic electrode 1111b is formed to be constant throughout the entire circumference. As a result, the electrostatic suction cup 1111 can adsorb the outer edge of the back side of the substrate W and suppress the leakage of the heat transfer gas. Other structures and Figure 2 and Fig. 9 The electrostatic chuck 1111 shown in the first embodiment is the same, and repeated description is omitted.

[0079] Fig.13 This is an example of a partially enlarged top view of the electrostatic chuck 1111 according to the fifth embodiment.

[0080] The outer peripheral wall 111a4 has: an arc portion 111a41 that is a part of a circle when viewed from above, and a notch portion 111a43 obtained by forming a notch in the circle when viewed from above. In addition, when viewed from above, the outer peripheral edge of the electrostatic electrode 1111b has an arc portion 1111b1 and a notch portion 1111b3. Thus, the distance between the outer peripheral edge of the electrostatic electrode 1111b and the outer peripheral wall 111a4 of the annular protrusion 111a3 is formed to be constant. That is, the thickness of the ceramic component 1111a from the outer peripheral edge of the electrostatic electrode 1111b to the outer peripheral wall 111a4 of the annular protrusion 111a3 is formed to be constant. In addition, the distance between the outer peripheral edge of the electrostatic electrode 1111b and the outer peripheral wall 111a4 of the annular protrusion 111a3 is preferably not less than 0.1 mm and not more than 5.0 mm. Thus, the insulation of the electrostatic electrode 1111b can be ensured. Other structures and Figure 2 and Fig. 9 The electrostatic chuck 1111 shown in the first embodiment is the same, and repeated description is omitted.

[0081] The embodiments disclosed above include the following aspects, for example.

[0082] (Note 1)

[0083] An electrostatic chuck, comprising:

[0084] A dielectric layer having a substrate support surface, the substrate support surface having a plurality of dot-shaped protrusions and an annular protrusion surrounding the plurality of dot-shaped protrusions, the annular protrusion having an inner peripheral wall and an outer peripheral wall, the inner peripheral wall extending along a first circle over the entire circumference when viewed from above, the outer peripheral wall having: an arc portion extending along a portion of a second circle larger than the first circle when viewed from above, and a notch portion extending linearly between both ends of the arc portion when viewed from above; and

[0085] The chuck electrode layer is disposed in the dielectric layer so as to overlap with the annular protrusion over the entire circumference in a plan view.

[0086] (Note 2)

[0087] The electrostatic chuck according to Supplement 1, wherein:

[0088] The annular protrusion has a first width from the outer peripheral wall to the inner peripheral wall at the arc portion.

[0089] (Note 3)

[0090] The electrostatic chuck according to Supplement 2, wherein:

[0091] The annular protrusion has a second width from the outer peripheral wall to the inner peripheral wall in a central area of ​​the notch portion.

[0092] (Note 4)

[0093] The electrostatic chuck according to Supplement 3, wherein:

[0094] The width of the annular protrusion gradually decreases from the outer area of ​​the notch portion to the central area of ​​the notch portion.

[0095] (Note 5)

[0096] The electrostatic chuck according to Supplement 4, wherein:

[0097] The first width is in a range of 1 to 10 times the second width.

[0098] (Note 6)

[0099] An electrostatic chuck according to any one of Supplementary Notes 2 to 5, wherein

[0100] The first width is in the range of 1 mm to 10 mm.

[0101] (Note 7)

[0102] An electrostatic chuck according to any one of Supplementary Notes 1 to 6, wherein

[0103] The outer peripheral edge of the chuck electrode layer has a straight portion extending linearly between the notch portion of the outer peripheral wall and the inner peripheral wall in a plan view.

[0104] (Note 8)

[0105] The electrostatic chuck according to Supplementary Note 7, wherein:

[0106] A radial distance between an outer peripheral edge of the chuck electrode layer and an outer peripheral wall of the annular protrusion is constant throughout the entire circumference in a plan view.

[0107] (Note 9)

[0108] The electrostatic chuck according to Supplement 7 or Supplement 8, wherein:

[0109] A radial distance between an outer peripheral edge of the suction cup electrode layer and an outer peripheral wall of the annular protrusion is within a range of 0.1 mm to 5 mm when viewed from above.

[0110] (Note 10)

[0111] An electrostatic chuck according to any one of Supplementary Notes 7 to 9, wherein

[0112] When viewed from above, a radial distance between the notch portion of the outer peripheral wall and the outer peripheral edge of the suction cup electrode layer is smaller than a radial distance between the arc portion of the outer peripheral wall and the outer peripheral edge of the suction cup electrode layer.

[0113] (Note 11)

[0114] An electrostatic chuck according to any one of Supplementary Notes 1 to 6, wherein

[0115] The outer peripheral edge of the chuck electrode layer extends along a third circle between the first circle and the second circle over the entire circumference in a plan view.

[0116] (Note 12)

[0117] The electrostatic chuck according to Supplementary Note 11, wherein

[0118] A radial distance between an outer peripheral edge of the chuck electrode layer and the inner peripheral wall of the annular protrusion is constant throughout the entire circumference in a plan view.

[0119] (Note 13)

[0120] The electrostatic chuck according to Supplement 11 or 12, wherein

[0121] A radial distance between an outer peripheral edge of the suction cup electrode layer and an inner peripheral wall of the annular protrusion is within a range of 0 mm to 10 mm when viewed from above.

[0122] (Note 14)

[0123] An electrostatic chuck according to any one of Supplementary Notes 11 to 13, wherein

[0124] A radial distance between an outer peripheral edge of the suction cup electrode layer and the notch portion of the outer peripheral wall of the annular protrusion in a plan view is greater than or equal to 0.1 mm in a central region of the notch portion.

[0125] (Note 15)

[0126] An electrostatic chuck, comprising:

[0127] A dielectric layer having a substrate support surface, the substrate support surface having a plurality of dot-shaped protrusions and an annular protrusion surrounding the plurality of dot-shaped protrusions, the annular protrusion having an inner peripheral wall and an outer peripheral wall, the inner peripheral wall extending along a first circle over the entire circumference when viewed from above, the outer peripheral wall having: an arc portion extending along a portion of a second circle larger than the first circle when viewed from above, and a notch portion formed by notching inwardly from the second circle when viewed from above; and

[0128] The chuck electrode layer is disposed in the dielectric layer so as to overlap with the annular protrusion over the entire circumference in a plan view.

[0129] (Note 16)

[0130] A substrate processing device comprises the electrostatic chuck as described in any one of Supplementary Notes 1 to 15.

[0131] In addition, the present invention is not limited to the structures listed in the above embodiments, the combination with other elements, and the structures shown here. These aspects can be changed within the scope of the present invention and can be appropriately determined according to the application mode.

[0132] In addition, this application claims priority from Japanese Patent Application No. 2022-129740 filed on August 16, 2022, the entire contents of which are incorporated herein by reference.

[0133] Description of Reference Numerals

[0134] 1 Plasma treatment device

[0135] 2 Control Unit

[0136] 10 Plasma Processing Chamber

[0137] 10s plasma treatment space

[0138] 11. Substrate support portion

[0139] 111 Main body

[0140] 111a Central Area

[0141] 111b Ring region

[0142] 1111 Electrostatic chuck

[0143] 1111a Ceramic component (dielectric layer)

[0144] 1111b Electrostatic electrode (suction cup electrode layer)

[0145] 1111b1 Arc part

[0146] 1111b2 Straight line part

[0147] 1111b3 Notch

[0148] 111a1 Lower excavation surface

[0149] 111a2 Dot-like protrusions

[0150] 111a3 Annular protrusion

[0151] 111a4 Outer wall

[0152] 111a41 Arc part

[0153] 111a42 Notch part (straight line part)

[0154] 111a43 Notch part (notch part)

[0155] 111a5 Inner wall

[0156] W11 First Width

[0157] W12 Second Width

[0158] C1 First Circle

[0159] C2 Second Circle

[0160] C3 Third Circle

[0161] W substrate.

Claims

1. An electrostatic chuck, characterized in that: include: A dielectric layer having a substrate support surface, the substrate support surface having a plurality of dot-shaped protrusions and an annular protrusion surrounding the plurality of dot-shaped protrusions, the annular protrusion having an inner peripheral wall and an outer peripheral wall, the inner peripheral wall extending along a first circle over the entire circumference in a plan view, the outer peripheral wall having an arc portion extending along a portion of a second circle larger than the first circle in a plan view, and a notch portion extending linearly between both ends of the arc portion in a plan view; and The chuck electrode layer is disposed in the dielectric layer so as to overlap with the annular protrusion over the entire circumference in a plan view.

2. The electrostatic chuck according to claim 1, wherein: The annular protrusion has a first width from the outer peripheral wall to the inner peripheral wall at the arc portion.

3. The electrostatic chuck according to claim 2, wherein: The annular protrusion has a second width from the outer peripheral wall to the inner peripheral wall in a central area of ​​the notch portion.

4. The electrostatic chuck according to claim 3, wherein: The width of the annular protrusion gradually decreases from the outer area of ​​the notch portion to the central area of ​​the notch portion.

5. The electrostatic chuck according to claim 4, wherein: The first width is in a range of 1 to 10 times the second width.

6. The electrostatic chuck according to claim 5, wherein: The first width is in the range of 1 mm to 10 mm.

7. The electrostatic chuck according to claim 1, characterized in that: The outer peripheral edge of the chuck electrode layer has a straight portion extending linearly between the notch portion of the outer peripheral wall and the inner peripheral wall in a plan view.

8. The electrostatic chuck according to claim 7, wherein: A radial distance between an outer peripheral edge of the chuck electrode layer and an outer peripheral wall of the annular protrusion is constant throughout the entire circumference in a plan view.

9. The electrostatic chuck according to claim 8, wherein: A radial distance between an outer peripheral edge of the suction cup electrode layer and an outer peripheral wall of the annular protrusion is within a range of 0.1 mm to 5 mm when viewed from above.

10. The electrostatic chuck according to claim 9, wherein: When viewed from above, a radial distance between the notch portion of the outer peripheral wall and the outer peripheral edge of the suction cup electrode layer is smaller than a radial distance between the arc portion of the outer peripheral wall and the outer peripheral edge of the suction cup electrode layer.

11. The electrostatic chuck according to claim 1, wherein: The outer peripheral edge of the chuck electrode layer extends along a third circle between the first circle and the second circle over the entire circumference in a plan view.

12. The electrostatic chuck according to claim 11, wherein: A radial distance between an outer peripheral edge of the chuck electrode layer and an inner peripheral wall of the annular protrusion is constant throughout the entire circumference in a plan view.

13. The electrostatic chuck of claim 12, wherein: A radial distance between an outer peripheral edge of the suction cup electrode layer and an inner peripheral wall of the annular protrusion is within a range of 0 mm to 10 mm when viewed from above.

14. The electrostatic chuck of claim 13, wherein: A radial distance between an outer peripheral edge of the suction cup electrode layer and the notch portion of the outer peripheral wall of the annular protrusion in a plan view is greater than or equal to 0.1 mm in a central region of the notch portion.

15. An electrostatic chuck, characterized in that: include: A dielectric layer having a substrate support surface, the substrate support surface having a plurality of dot-shaped protrusions and an annular protrusion surrounding the plurality of dot-shaped protrusions, the annular protrusion having an inner peripheral wall and an outer peripheral wall, the inner peripheral wall extending along a first circle over the entire circumference in a plan view, the outer peripheral wall having an arc portion extending along a portion of a second circle larger than the first circle in a plan view, and a notch portion formed by notching inward from the second circle in a plan view; and The chuck electrode layer is disposed in the dielectric layer so as to overlap with the annular protrusion over the entire circumference in a plan view.

16. A substrate processing device, characterized in that: An electrostatic chuck according to any one of claims 1 to 15.

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