Circuit control method and device, storage medium and electronic equipment

Abstract

The invention discloses a circuit control method and device, a storage medium and electronic equipment, and the method comprises the steps: obtaining a phase lag angle and a resonance frequency of equivalent impedance, obtaining a theoretical conduction time length based on the phase lag angle and the resonance frequency, obtaining a load voltage, a power supply voltage, a transformation ratio and an actual conduction time length, when the load voltage is smaller than a target voltage, reducing the actual conduction duration by unit duration to obtain a first conduction duration, determining a target conduction duration based on the first conduction duration and a theoretical conduction duration, and when the load voltage is larger than a preset voltage, increasing the actual conduction duration by unit duration to obtain a second conduction duration, and determining a target conduction duration based on the second conduction duration and the half-cycle duration, and adopting the target conduction duration to control the working state of a switching tube in the target circuit. According to the invention, the charging feedback phenomenon of the target circuit is controlled, so that the target circuit can still work in a high-gain state during charging and discharging, and the working performance of the target circuit is improved.

Description

Technical Field

[0001] The present application relates to the technical field of power electronic converters, and in particular to a circuit control method, device, storage medium and electronic equipment. Background Art

[0002] Nowadays, electronic devices play an increasingly important role in people's daily lives. When using energy storage batteries to power electronic devices, a common practice is to use micro-inverters to achieve photovoltaic access to share the load of the energy storage battery or to charge the energy storage battery. Summary of the invention

[0003] The present application provides a circuit control method, device, storage medium and electronic device, which can control the working state of a switch tube in a target circuit based on the conduction time of the target circuit, and suppress or enhance the charging feedback phenomenon of the target circuit according to the switching of the switch tube on and off, thereby ensuring that the target circuit can still operate in a high gain state during charging and discharging, thereby improving the working performance of the target circuit.

[0004] In a first aspect, an embodiment of the present specification provides a circuit control method, the method comprising:

[0005] Obtaining a phase lag angle of an equivalent impedance of a target circuit and a resonant frequency of the resonant circuit, and obtaining a theoretical conduction time corresponding to the target circuit based on the phase lag angle and the resonant frequency;

[0006] Obtaining a load voltage of the load circuit, a power supply voltage in the power supply circuit, a transformation ratio in the target circuit, and an actual conduction time corresponding to the target circuit;

[0007] When the load voltage is less than the target voltage, the actual on-time is reduced by a preset unit time to obtain a first on-time, and a target on-time is determined based on a first comparison result obtained by comparing the first on-time with the theoretical on-time, wherein the target voltage is obtained based on the power supply voltage and the transformation ratio;

[0008] When the load voltage is greater than the preset voltage, the actual on-time is increased by a preset unit time to obtain a second on-time, and the target on-time is determined based on a second comparison result obtained by comparing the second on-time with the half-cycle time, the preset voltage is obtained based on the target voltage and a preset voltage reference value, the cycle time is the on-time of the resonant circuit, which is calculated according to the cycle calculation formula and the resonant frequency, and the half-cycle time is half of the cycle time;

[0009] The target on-time is used to control the working state of the switch tube in the target circuit.

[0010] In a second aspect, an embodiment of the present specification provides a circuit control device, including:

[0011] A theoretical duration acquisition unit, used to acquire a phase lag angle of an equivalent impedance of the target circuit and a resonant frequency of the resonant circuit, and obtain a theoretical conduction duration corresponding to the target circuit based on the phase lag angle and the resonant frequency;

[0012] an actual duration acquisition unit, used to acquire the load voltage of the load circuit, the power supply voltage of the power supply circuit, the transformation ratio in the target circuit, and the actual conduction duration corresponding to the target circuit;

[0013] a target duration acquisition unit, configured to, when the load voltage is less than a target voltage, reduce the actual on-time by a preset unit duration to obtain a first on-time, and determine a target on-time by a first comparison result obtained by comparing the first on-time with the theoretical on-time, wherein the target voltage is obtained by multiplying the power supply voltage by the transformation ratio;

[0014] The target duration acquisition unit is further used for, when the load voltage is greater than the preset voltage, increasing the actual conduction duration by a preset unit duration to obtain a second conduction duration, and determining the target conduction duration based on a second comparison result obtained by comparing the second conduction duration with the half-cycle duration, the preset voltage is obtained by adding the target voltage and a preset voltage reference value, the cycle duration is the conduction period of the resonant circuit, which is calculated according to a cycle calculation formula and the resonant frequency, and the half-cycle duration is half of the cycle duration;

[0015] A switch circuit control unit is used to control the working state of the switch tube in the target circuit by using the target conduction time.

[0016] In a third aspect, an embodiment of the present specification provides a computer storage medium, wherein the computer storage medium stores a plurality of instructions, wherein the instructions are suitable for being loaded by a processor and executing the steps of the above method.

[0017] In a fourth aspect, an embodiment of the present specification provides an electronic device, comprising: a processor and a memory; wherein the memory stores a computer program, and the computer program is suitable for being loaded by the processor and executing the steps of the above method.

[0018] In the present application, by acquiring specific circuit parameters of the target circuit, and obtaining the theoretical on-time and the actual on-time based on these specific circuit parameters, the target on-time is obtained based on the comparison result of the load voltage and the power supply voltage of the target circuit and the comparison result of the theoretical on-time and the actual on-time, so as to control the working state of the switch tube in the target circuit based on the on-time of the target circuit, and suppress or enhance the charging feedback phenomenon of the target circuit by controlling the switching of the on and off of the switch tube, so as to ensure that the target circuit can still operate in a high gain state during charging and discharging, thereby improving the working performance of the target circuit. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the embodiments of this specification or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this specification. For those skilled in the art, other drawings can be obtained based on these drawings without paying any creative work.

[0020] Figure 1 A system architecture diagram of a circuit control method provided in an embodiment of this specification;

[0021] Figure 2 An exemplary schematic diagram of a target circuit provided in an embodiment of this specification;

[0022] Figure 3 An example schematic diagram of an original circuit provided in the embodiments of this specification;

[0023] Figure 4 A flow chart of a circuit control method provided in an embodiment of this specification;

[0024] Figure 5 A schematic diagram of a process for determining a target on-time provided in an embodiment of this specification;

[0025] Figure 6 A flowchart of another circuit control method provided in an embodiment of this specification;

[0026] Figure 7 A schematic diagram of the structure of a circuit control device provided in an embodiment of this specification;

[0027] Figure 8 A schematic diagram of the structure of a theoretical duration acquisition unit provided in an embodiment of this specification;

[0028] Fig. 9 A schematic diagram of the structure of an electronic device provided in an embodiment of this specification. DETAILED DESCRIPTION

[0029] In order to make the features and advantages of the present application more obvious and easy to understand, the technical solutions in the embodiments of the present specification will be clearly and completely described below in conjunction with the drawings in the embodiments of the present specification. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application.

[0030] In the prior art, there is a charging feedback phenomenon in the process of using micro-inverters to power loads such as electrical equipment after photovoltaic access. When the circuit is in reverse operation, the circuit cannot smoothly transmit energy to the load, affecting the circuit operation.

[0031] Based on this, an embodiment of the present specification provides a circuit control method, which obtains circuit parameters such as the lag angle, resonant frequency and load voltage of the load circuit, the power supply voltage in the target circuit, the transformation ratio in the target circuit and the actual on-time corresponding to the target circuit, and obtains a theoretical on-time and an actual on-time based on these circuit parameters, and obtains a target on-time based on a comparison result between the load voltage and the power supply voltage of the target circuit and a comparison result between the theoretical on-time and the actual on-time, thereby controlling the working state of the switch tube in the target circuit to switch between on and off based on the on-time of the target circuit, enhancing or suppressing the charging feedback phenomenon of the target circuit, thereby ensuring that the target circuit can still operate in a high gain state during charging and discharging, thereby improving the working performance of the target circuit.

[0032] See also Figure 1 , is a system structure diagram of a circuit control provided in the embodiment of this specification. Figure 1 As shown, the circuit control method provided in the embodiment of this specification can be applied to a charging and discharging device to realize the process of controlling the state of the switch tube of the resonant circuit in the charging and discharging device. The system structure provided in the embodiment of this specification mainly includes a charging and discharging device, an energy storage battery, a user load, and a battery panel + micro inverter. Among them, the charging and discharging device can be a circuit device including a resonant circuit and a switch tube, which is used to control the voltage transmitted to the charging and discharging device by the battery panel + micro inverter and the user load; the battery panel + micro inverter is used to supply energy to the user load, for example, electric energy; the energy storage battery is used to supply energy when the energy provided by the battery panel + micro inverter to the user load is insufficient, for example, electric energy; the user load can be any circuit that consumes electric energy and needs to obtain energy from the battery panel + micro inverter or energy storage battery to operate.

[0033] The charging device includes a control circuit, the control circuit includes a target circuit and a power circuit, the target circuit includes a load circuit and a resonant circuit, the target circuit may be an equivalent circuit obtained by equivalent conversion of the original circuit, and the target circuit is connected to the power circuit. The control circuit may be a circuit for controlling various components in the charging and discharging device, the resonant circuit may be a circuit for controlling the conduction time of the switch tube in the resonant circuit converter in the resonant circuit, and may also include capacitors, resistors, transformers, etc.

[0034] The target circuit can be Figure 2 As shown, Figure 2 Including the resonant capacitor C r , the primary switch tube equivalent capacitance C j , resonant inductor L r , Excitation inductance L m , load resistance R bus And power supply, the voltage output by the power supply is converted by an equivalent transformer to obtain the target voltage n*V sec Where n is the transformer transformation ratio of the transformer in the resonant circuit, V sec can be the power supply voltage, the excitation inductance L m is the inductance of the equivalent transformer, the resonant capacitor C r , the primary switch tube equivalent capacitance C j , resonant inductor L r , Excitation inductance L m and load resistance R bis The connection relationship is as follows Figure 2 As shown, the equivalent transformer can be a component used to increase or decrease the voltage output by the power supply circuit according to the transformation ratio, and the specific value of each parameter can be obtained by directly detecting the target circuit.

[0035] The power circuit can be a circuit for transmitting the electric energy output by the energy storage battery to the target circuit, and for supplying energy to the target circuit and the load circuit. It is understandable that when the micro inverter charges the battery panel back, the power circuit can also be used to transmit the electric energy to the energy storage battery.

[0036] The original circuit may be a circuit including a resonant circuit connected to a micro inverter and a power circuit connected to an energy storage battery. By adjusting the conduction state of the switch tube of the resonant circuit in the charging and discharging device to enhance or suppress the charging feedback phenomenon, the target circuit can be obtained by equivalently converting the original circuit. The original circuit may be as follows: Figure 3 As shown, Figure 3 The primary circuit in the circuit includes a resonant circuit, primary switch tubes (Q1, Q2, Q3, Q4) and secondary switch tubes (Q5, Q6, Q7, Q8). The primary switch tubes and the load circuit V busThe secondary switch tube is connected to the power supply V of the energy storage battery. bat are connected.

[0037] The charging feedback phenomenon refers to the phenomenon that when the battery is supplied with energy, part of the electrical energy will be fed back to the battery through the primary side switch tube. The charging feedback phenomenon can be amplified by increasing the duration of the primary side switch tube being turned on, and the charging feedback phenomenon can be suppressed by increasing the duration of the primary side switch tube being closed.

[0038] In the embodiments of the present specification, specific circuit parameters in the target circuit are obtained, and the theoretical on-time and the actual on-time are calculated based on these circuit parameters. Based on the transformation ratio of the transformer of the target circuit in the circuit parameters, the load voltage and the power supply voltage are compared to obtain a voltage comparison result. Based on the voltage comparison result, the theoretical on-time and the actual on-time are compared to obtain a time comparison result. Based on the time comparison result, the actual on-time is adjusted to obtain a target on-time. The target on-time is used to control the working state of the switch in the target circuit, thereby suppressing or enhancing the charging feedback phenomenon of the target circuit according to the switching of the switch on and off, thereby ensuring that the target circuit can still operate in a high gain state during charging and discharging, thereby improving the working performance of the target circuit.

[0039] based on Figure 1 The system architecture shown below will be combined with Figure 4 , the circuit control method provided in the embodiments of this specification is introduced in detail.

[0040] See also Figure 4 , is a flow chart of a circuit control method provided in the embodiment of this specification. Figure 4 As shown, the method may include the following steps S101-S105.

[0041] S101, obtaining a phase lag angle of an equivalent impedance of a target circuit and a resonant frequency of a resonant circuit, and obtaining a theoretical conduction time corresponding to the target circuit based on the phase lag angle and the resonant frequency;

[0042] In one embodiment, the resonant frequency of the resonant circuit is obtained, and the angular velocity corresponding to the equivalent impedance is calculated according to a preset angular velocity calculation formula and the resonant frequency, and the equivalent impedance value and the equivalent capacitive reactance value of the equivalent impedance of the target circuit are obtained. The phase lag angle of the equivalent impedance is obtained by calculation according to a preset first calculation formula and the equivalent impedance value and the equivalent capacitive reactance value, and the theoretical conduction time corresponding to the resonant circuit is obtained by calculation according to a preset second calculation formula and the phase lag angle and the angular velocity.

[0043] The angular velocity may be calculated according to a preset angular velocity calculation formula and the resonant frequency, wherein the angular velocity calculation formula may be formula (1):

[0044] ω=2π·fr Formula (1)

[0045] Where ω is the angular velocity and fr is the resonant frequency. The resonant frequency can be the resonant angular frequency of the resonant circuit. According to the frequency calculation formula and the equivalent inductance L in the resonant circuit r , equivalent capacitance C r The frequency calculation formula can be calculated as formula (2):

[0046]

[0047] The first calculation formula may be formula (3):

[0048]

[0049] Where α is the phase lag angle, R eq The equivalent impedance value of the equivalent impedance of the target circuit, X eq It can be an equivalent capacitance and inductance value of an equivalent impedance, which is used to indicate the capacitance value and inductance value in the target circuit.

[0050] Exemplarily, a feasible method for obtaining the equivalent impedance value and the equivalent capacitive reactance value may be to obtain the load impedance of the load circuit and the switch tube impedance of the switch tube circuit, calculate based on the load impedance and the switch tube impedance according to the preset third calculation formula, obtain the equivalent impedance value of the equivalent impedance of the target circuit, obtain the equivalent inductance and equivalent capacitance of the resonant circuit, calculate according to the preset fourth calculation formula and the equivalent inductance, equivalent capacitance, load impedance, angular velocity, and switch tube impedance, and obtain the equivalent capacitive reactance value corresponding to the target circuit. Among them, the equivalent impedance value may be the sum of the impedance values ​​of all components included in the target circuit.

[0051] Used to calculate the impedance value R eq The third calculation formula can be formula (4):

[0052]

[0053] Among them, R bus Can be the equivalent impedance value, X j_eq Can be the primary switch capacitance C j The equivalent impedance of .

[0054] The equivalent capacitance and inductance value may be the sum of the equivalent capacitance and the equivalent inductance value in the target circuit. The fourth calculation formula for calculating the equivalent capacitance and inductance value may be formula (5):

[0055]

[0056] Furthermore, a feasible method for calculating the theoretical on-time is to calculate according to the preset fifth calculation formula and the phase lag angle and the angular velocity to obtain the conduction angle of the equivalent impedance, and to calculate according to the preset second calculation formula and the angular velocity and the conduction angle to obtain the theoretical on-time corresponding to the target circuit.

[0057] The theoretical on-time may be a on-time obtained by calculation based on the acquired circuit parameters. It should be noted that the theoretical on-time is not the optimal on-time, but is only a on-time obtained by calculation.

[0058] Used to calculate the theoretical conduction time T SR_Cal The second calculation formula can be formula (6):

[0059]

[0060] Among them, T S It can be the cycle length of the target circuit, and β can be the conduction angle of the target circuit.

[0061] It should be noted that the cycle duration may be the conduction period of the resonant circuit, which is calculated according to the cycle calculation formula and the resonant frequency. The preset cycle calculation formula may be formula (7); the conduction angle may be an angle that enables the target circuit to meet the maximum gain. The preset fifth calculation formula for calculating the conduction angle may be formula (8):

[0062]

[0063] β=ω-α Formula (8)

[0064] It can be understood that charging feedback occurs when the resonant circuit converter is in reverse operation, resulting in a reduction in the reverse gain of the resonant circuit converter. Therefore, the maximum gain can be such that the resonant circuit converter outputs as much energy from the power supply as possible to the load circuit.

[0065] Furthermore, in order to ensure that the secondary side switch tube of the resonant circuit converter can be in a high-gain working state, a feasible method is that each switch tube of the secondary side switch tube operates at the resonant frequency of the target circuit, and the duty cycle of each switch tube of the secondary side is fifty percent.

[0066] S102, obtaining a load voltage of the load circuit, a power supply voltage in the power supply circuit, a transformation ratio in the target circuit, and an actual conduction time corresponding to the target circuit;

[0067] In one embodiment, the load voltage may be a voltage detected at a load circuit connected to the target circuit.

[0068] The power supply voltage may be a voltage at which the power supply circuit outputs the power of the energy storage battery to the target circuit.

[0069] The transformation ratio may be a coil ratio of a transformer in a target circuit, for example, 5:4.

[0070] The actual on-time may be the on-time of the primary switch tube controlled by the target circuit at the current moment. It should be noted that the scenario exemplified in this specification is that the resonant circuit converter is in a reverse working state, so the primary switch tube is the switch tube connected to the load circuit, for example Figure 4 The primary side switching tubes (Q1, Q2, Q3, Q4) in.

[0071] S103, when the load voltage is less than the target voltage, reducing the actual on-time by a preset unit time to obtain a first on-time, and determining a target on-time based on a first comparison result obtained by comparing the first on-time with the theoretical on-time;

[0072] In one embodiment, the target voltage and the load voltage are compared. When the load voltage is less than the target voltage, the actual on-time is reduced by a preset unit time to obtain a first on-time. The first on-time is compared with the theoretical on-time to obtain a first comparison result. When the first comparison result indicates that the first on-time is greater than the theoretical on-time, the first on-time is determined as the target on-time; when the first comparison result indicates that the first on-time is less than or equal to the theoretical on-time, the theoretical on-time is determined as the target on-time.

[0073] The target voltage may be a voltage calculated by multiplying the transformation ratio and the power supply voltage, such as Figure 2 n*V sec Can be Figure 2 The target voltage of the target circuit shown in the figure. Where n is the transformer ratio, V sec It can be the power supply voltage.

[0074] The preset unit time length may be a preset fixed time length, for example, 0.1 μs.

[0075] The first on-time may be a time obtained by adding a preset unit time to the actual on-time. For example, if the actual on-time is 8.2 μs and the unit time is 0.1 μs, the first on-time is (8.2-0.1)=8.1 μs.

[0076] S104, when the load voltage is greater than a preset voltage, increasing the actual on-time by a preset unit time to obtain a second on-time, and determining the target on-time based on a second comparison result obtained by comparing the second on-time with a half-cycle time, wherein the preset voltage is obtained based on the target voltage and a preset voltage reference value;

[0077] In one embodiment, the load voltage is compared with a preset voltage. When the load voltage is less than the preset voltage, the actual on-time is increased by a preset unit time to obtain a second on-time. The second on-time is compared with the half-cycle time to obtain a second comparison result. When the second comparison result indicates that the second on-time is greater than the half-cycle time, the half-cycle time is determined as the target on-time; when the second comparison result indicates that the second on-time is less than or equal to the half-cycle time, the second on-time is determined as the target on-time.

[0078] The second on-time may be a time obtained by adding a preset unit time to the actual on-time. For example, if the actual on-time is 8.2 μs and the unit time is 0.1 μs, the first on-time is (8.2+0.1)=8.3 μs.

[0079] The preset voltage can be obtained based on the target voltage and a preset voltage reference value, for example, (n*V sec +x)V, etc. Among them, "n*V sec +x" may be the maximum voltage value when the duty cycle of the switch tube controlled by the target circuit is 50% without damaging the target circuit and the load circuit, and x may be a value obtained after the experiment, which is used as a voltage reference value, for example, 30, etc. It should be noted that the preset voltage may be that the load circuit is at the maximum gain when the duty cycle of the switch tube controlled by the target circuit is 50%, and the load voltage of the load circuit can be released in time when the reverse operation is changed to the forward operation.

[0080] The half-cycle duration may be half of the cycle duration of the target circuit. The cycle duration may be obtained by using the cycle calculation formula in step S101, that is, formula (7).

[0081] It can be understood that since the preset voltage is a pre-set voltage value, that is, the highest voltage value that can ensure that the target circuit and the load circuit are not damaged, it can also make the load circuit at the maximum gain when the duty cycle of the switch tube controlled by the target circuit is 50%, and the load voltage of the load circuit can be released in time when the reverse operation is converted to forward operation. Therefore, when the load voltage is greater than or equal to the target voltage and less than or equal to the preset voltage, there is no need to adjust the actual conduction time, and the actual conduction time can be directly determined as the target conduction time.

[0082] Further, such as Figure 5 As shown, Figure 5 A flowchart can be provided for comparing the load voltage with the actual on-time to determine the target on-time. Figure 5 It can be seen that after obtaining the load voltage and target voltage (n*V sec ), a preset voltage (the preset reference value is selected as 30V), the actual on-time, the cycle time and the theoretical on-time, then compare the load voltage with the preset voltage. When the load voltage is greater than the preset voltage, increase the actual on-time by the preset unit time (0.1μs) to obtain a second on-time. Compare the second on-time with the half-cycle time. When the second on-time is greater than the half-cycle time, determine the second on-time as the target on-time; when the second on-time is less than or equal to the half-cycle time, determine the actual on-time as the target on-time. When the load voltage is less than or equal to the preset voltage, the load voltage is compared with the target voltage. When the load voltage is greater than or equal to the target voltage, the actual on-time is determined as the target on-time. When the load voltage is less than the target voltage, the actual on-time is reduced by a preset unit time to obtain a first on-time, and the first on-time is compared with the theoretical on-time. When the first on-time is greater than or equal to the theoretical on-time, the actual on-time is determined as the target on-time. When the first on-time is less than the theoretical on-time, the theoretical on-time is determined as the target on-time.

[0083] S105, using the target on-time to control the working state of the switch in the target circuit;

[0084] In one embodiment, after the target on-time is determined, the target on-time is used to control the working state of the primary switch in the target circuit.

[0085] Exemplarily, the method of using the target on-time to control the working state of the primary switch tube in the target circuit may be to control the primary switch tube in the target circuit to switch between the on state and the closed state every target on-time. For example, if the target on-time is 8.2 μs, the primary switch tube of the target circuit is controlled to switch from the on state to the closed state, or from the closed state to the on state, every 16.4 μs.

[0086] It is understandable that since the target circuit controls all the switch tubes of the primary switch tube, when the conduction or closing time of each switch tube in the primary switch tube reaches 8.2μs, each switch tube is controlled to switch state at the same time. If there is a need to control each switch tube separately, it can be set according to the actual situation.

[0087] In the embodiments of the present specification, specific circuit parameters of the target circuit are obtained, and the theoretical on-time and the actual on-time are obtained based on these circuit parameters. The target on-time is obtained based on the comparison result of the load voltage and the power supply voltage of the target circuit and the comparison result of the theoretical on-time and the actual on-time. Therefore, the working state of the switch tube in the target circuit is controlled based on the on-time of the target circuit. By controlling the switching of the on and off of the switch tube, the charging feedback phenomenon of the target circuit is suppressed or enhanced, thereby ensuring that the target circuit can still operate in a high gain state during charging and discharging, thereby improving the working performance of the target circuit.

[0088] See also Figure 6 , provides a flow chart of another circuit control method for the embodiment of this specification. Figure 6 As shown, the method may include the following steps S201-S216.

[0089] S201, obtaining a resonant frequency of the resonant circuit, and calculating according to a preset angular velocity calculation formula and the resonant frequency to obtain an angular velocity corresponding to the equivalent impedance;

[0090] In one embodiment, the resonant frequency of the resonant circuit is obtained, and the angular velocity corresponding to the equivalent impedance is obtained by calculation according to a preset angular velocity calculation formula and the resonant frequency.

[0091] The angular velocity may be calculated according to a preset angular velocity calculation formula and the resonant frequency, wherein the angular velocity calculation formula may be formula (1). The specific content of formula (1) may refer to step S101 and will not be described in detail here.

[0092] In formula (1), fr is the resonant frequency. The resonant frequency may be the resonant angular frequency of the resonant circuit, which is calculated according to the frequency calculation formula and the equivalent inductance and equivalent capacitance in the resonant circuit. The frequency calculation formula may be formula (2), and the specific content of formula (2) may refer to step S101, which will not be described here.

[0093] S202, obtaining a load impedance of the load circuit and a switch tube impedance of the switch tube circuit, and performing calculation based on the load impedance and the switch tube impedance according to a preset third calculation formula to obtain an equivalent impedance value of an equivalent impedance of the target circuit;

[0094] In one embodiment, in order to obtain the phase lag angle of the equivalent impedance, it is necessary to first obtain the equivalent impedance value of the equivalent impedance. The equivalent impedance value can be calculated based on the load impedance and the switch tube impedance according to a preset third calculation formula.

[0095] The third calculation formula may be formula (4). The specific content of formula (4) may refer to step S101 and will not be described in detail here.

[0096] S203, obtaining an equivalent inductance and an equivalent capacitance of the resonant circuit, and performing calculation according to a preset fourth calculation formula and the equivalent inductance, the equivalent capacitance, the load impedance, the angular velocity, and the switch tube impedance to obtain an equivalent capacitance and inductance value corresponding to the target circuit;

[0097] In one embodiment, the equivalent capacitive reactance value may be used to indicate the capacitance value and the inductance value in the target circuit.

[0098] The equivalent capacitance value may be calculated according to a preset fourth calculation formula. The fourth calculation formula may be formula (5). The specific content of formula (5) may refer to step S101 and will not be described in detail here.

[0099] S204, performing calculation according to a preset first calculation formula and the equivalent impedance value and the equivalent capacitive reactance value to obtain a phase lag angle of the equivalent impedance;

[0100] In one embodiment, the first calculation formula may be formula (3). The specific content of formula (3) may refer to step S101 and will not be described in detail here.

[0101] Furthermore, in order to ensure that the secondary side switch tube of the resonant circuit converter can be in a high-gain working state, a feasible method is that each switch tube of the secondary side switch tube operates at the resonant frequency of the target circuit, and the duty cycle of each switch tube of the secondary side is fifty percent.

[0102] S205, performing calculation according to a preset fifth calculation formula, the phase lag angle, and the angular velocity to obtain a conduction angle of the equivalent impedance;

[0103] In one embodiment, the conduction angle may be used to ensure that the resonant circuit meets the maximum gain, and the conduction angle may be calculated according to the fifth calculation formula and the phase lag angle and the angular velocity.

[0104] The method for obtaining the conduction angle may be to calculate it according to the fifth calculation formula. The fifth calculation formula may be formula (8). The specific content of formula (8) may refer to step S101 and will not be described in detail here.

[0105] It can be understood that charging feedback occurs when the resonant circuit is in reverse operation, resulting in a reduction in the reverse gain of the resonant circuit converter. Therefore, the maximum gain can be such that the resonant circuit converter outputs as much energy from the power supply as possible to the load circuit.

[0106] S206, calculating according to a preset second calculation formula, the angular velocity, and the conduction angle to obtain a theoretical conduction time corresponding to the target circuit;

[0107] In one embodiment, the second calculation formula may be formula (6). The specific content of formula (6) may refer to step S101 and will not be described in detail here.

[0108] The theoretical on-time may be a on-time obtained by calculation based on the acquired circuit parameters. It should be noted that the theoretical on-time is not the optimal on-time, but is only a time obtained by calculation.

[0109] Among them, the T included in formula (6) S It can be the cycle length of the target circuit. The method for obtaining the cycle length can be to calculate it according to the cycle calculation formula. The cycle calculation formula can be formula (7). The specific content of formula (7) can be referred to step S101 and will not be repeated here.

[0110] S207, obtaining a load voltage of the load circuit, a power supply voltage of the power supply circuit, a transformation ratio in the target circuit, and an actual conduction time corresponding to the target circuit;

[0111] In one embodiment, the load voltage may be a voltage detected at a load circuit connected to the target circuit.

[0112] The power supply voltage may be a voltage at which the power supply circuit outputs the power of the energy storage battery to the target circuit.

[0113] The transformation ratio may be a coil ratio of a transformer in a target circuit, for example, 5:4.

[0114] The actual on-time may be the on-time of the primary switch tube controlled by the target circuit at the current moment. It should be noted that the scenario exemplified in this specification is that the resonant circuit converter is in a reverse working state, so the primary switch tube is the switch tube connected to the load circuit, for example Figure 4 The primary side switching tubes (Q1, Q2, Q3, Q4) in.

[0115] S208, comparing the load voltage with the target voltage, and when the load voltage is less than the target voltage, reducing the actual on-time by a preset unit time to obtain a first on-time;

[0116] In one embodiment, the target voltage may be a voltage calculated by multiplying the transformation ratio and the power supply voltage.

[0117] For example, Figure 2 n*V sec Can be Figure 2 The target voltage of the target circuit shown in the figure. Where n is the transformer ratio, C sec It can be the power supply voltage. For example, n is 5:4, and the power supply voltage V sec is 200V, then the target voltage is 250V.

[0118] The preset unit time length may be a preset fixed time length, for example, 0.1 μs.

[0119] The first on-time may be a time obtained by adding a preset unit time to the actual on-time. For example, if the actual on-time is 8.2 μs and the unit time is 0.1 μs, the first on-time is (8.2-0.1)=8.1 μs.

[0120] S209, comparing the first on-time with the theoretical on-time to obtain a first comparison result;

[0121] In one embodiment, the first comparison result may include two situations: the first on-time length is greater than the theoretical on-time length, and the first on-time length is less than or equal to the theoretical on-time length.

[0122] It can be understood that since the load voltage is less than the target voltage, in order to ensure that the gain of the resonant circuit remains at the maximum, it is necessary to increase the charging feedback phenomenon. Therefore, in order to increase the charging feedback phenomenon, the first on-time is compared with the theoretical on-time, so that a longer on-time can be selected as the target on-time based on the comparison result.

[0123] S210, when the first comparison result indicates that the first on-time is greater than the theoretical on-time, determining the first on-time as a target on-time;

[0124] In one embodiment, the method for determining the target on-time from the first on-time is that, if the first on-time is 8.3 μs and the actual on-time is 8.25 μs, the actual on-time of 8.25 μs is adjusted to a half-cycle time of 8.3 μs to obtain a target on-time of 8.3 μs.

[0125] S211, when the first comparison result indicates that the first on-time is less than or equal to the theoretical on-time, determining the theoretical on-time as the target on-time;

[0126] In one embodiment, the method for determining the target on-time from the theoretical on-time is that if the first on-time is 8.2 μs and the theoretical on-time is 8.25 μs, the first on-time of 8.2 μs is adjusted to the theoretical on-time of 8.25 μs to obtain the target on-time of 8.25 μs.

[0127] S212, comparing the load voltage with a preset voltage, and when the load voltage is less than the preset voltage, increasing the actual on-time by a preset unit time to obtain a second on-time;

[0128] In one embodiment, the second on-time may be the actual on-time plus a preset unit time. For example, if the actual on-time is 8.2 μs and the unit time is 0.1 μs, the first on-time is (8.2+0.1)=8.3 μs.

[0129] The preset voltage can be obtained based on the target voltage and a preset voltage reference value, for example, (n*V sec +x)V, etc. Among them, "n*V sec +x" may be the maximum voltage value when the duty cycle of the switch tube controlled by the target circuit is 50% without damaging the target circuit and the load circuit, and x may be a value obtained after the experiment, which is used as a voltage reference value, for example, 30, etc. It should be noted that the preset voltage may be that the load circuit is at the maximum gain when the duty cycle of the switch tube controlled by the target circuit is 50%, and the load voltage of the load circuit can be released in time when the reverse operation is changed to the forward operation.

[0130] It can be understood that since the preset voltage is a pre-set voltage value, that is, the highest voltage value that can ensure that the target circuit and the load circuit are not damaged, it can also make the load circuit at the maximum gain when the duty cycle of the switch tube controlled by the target circuit is 50%, and the load voltage of the load circuit can be released in time when the reverse operation is converted to forward operation. Therefore, when the load voltage is greater than or equal to the target voltage and less than or equal to the preset voltage, there is no need to adjust the actual conduction time, and the actual conduction time can be directly determined as the target conduction time.

[0131] S213, comparing the second on-time with the half-cycle time to obtain a second comparison result;

[0132] In one embodiment, the half-cycle duration may be half of the cycle duration of the target circuit. The cycle duration may be obtained by using the cycle calculation formula in step S101, that is, formula (7).

[0133] The second comparison result may include two situations: the second on-time length is greater than the half-cycle time length, and the first on-time length is less than or equal to the half-cycle time length.

[0134] It can be understood that since the load voltage is greater than the preset voltage, in order to ensure that the gain of the resonant circuit remains at the maximum, it is necessary to reduce the charging feedback phenomenon. Therefore, in order to reduce the charging feedback phenomenon, the second conduction time is compared with the half-cycle time, so that the shorter conduction time can be selected as the target conduction time according to the comparison result.

[0135] S214, when the second comparison result indicates that the second on-time is greater than the half-cycle time, determining the half-cycle time as the target on-time;

[0136] In one embodiment, the method for determining the target on-time length from the half-cycle duration is that, if the second on-time length is 8.3 μs and the half-cycle duration is 8.25 μs, the second on-time length 8.3 μs is adjusted to the half-cycle duration 8.25 μs to obtain the target on-time length 8.25 μs.

[0137] S215, when the second comparison result indicates that the second on-time is less than or equal to the half-cycle time, determining the second on-time as the target on-time;

[0138] In one embodiment, when the target circuit releases the voltage of the connected load circuit through the switch tube, if the duty cycle of the switch tube is too large, when the target circuit switches from reverse operation to forward operation, the energy cannot be released in time, resulting in damage to the circuit. Therefore, it is necessary to limit the maximum and minimum values ​​of the target on-time, and then use the preset voltage and the target voltage as the maximum and minimum values ​​respectively to compare and judge the actual on-time.

[0139] Further, such as Figure 5 As shown, Figure 5 A flowchart can be provided for comparing the load voltage with the actual on-time to determine the target on-time. Figure 5 It can be seen that after obtaining the load voltage and target voltage (n*C sec), a preset voltage (the preset reference value is selected as 30V), the actual on-time, the cycle time and the theoretical on-time, then compare the load voltage with the preset voltage. When the load voltage is greater than the preset voltage, increase the actual on-time by the preset unit time (0.1μs) to obtain a second on-time. Compare the second on-time with the half-cycle time. When the second on-time is greater than the half-cycle time, determine the second on-time as the target on-time; when the second on-time is less than or equal to the half-cycle time, determine the actual on-time as the target on-time. When the load voltage is less than or equal to the preset voltage, the load voltage is compared with the target voltage. When the load voltage is greater than or equal to the target voltage, the actual on-time is determined as the target on-time. When the load voltage is less than the target voltage, the actual on-time is reduced by a preset unit time to obtain a first on-time, and the first on-time is compared with the theoretical on-time. When the first on-time is greater than or equal to the theoretical on-time, the actual on-time is determined as the target on-time. When the first on-time is less than the theoretical on-time, the theoretical on-time is determined as the target on-time.

[0140] S216, using the target on-time to control the working state of the switch in the target circuit;

[0141] In one embodiment, a feasible method of using the target on-time to control the working state of the primary switch in the target circuit may be to control the primary switch in the target circuit to switch between the on state and the closed state every target on-time.

[0142] For example, if the target on-time is 8.2 μs, the primary switch tube of the target circuit is controlled to switch from the on state to the closed state, or from the closed state to the on state, every 16.4 μs.

[0143] It is understandable that since the target circuit controls all the switch tubes of the primary switch tube, when the conduction or closing time of each switch tube in the primary switch tube reaches 8.2μs, each switch tube is controlled to switch state at the same time. If there is a need to control each switch tube separately, it can be set according to the actual situation.

[0144] In the embodiments of the present specification, specific circuit parameters of the target circuit are obtained, and the theoretical on-time and the actual on-time are obtained based on these circuit parameters. The target on-time of the target circuit is obtained based on the comparison result of the load voltage and the power supply voltage of the target circuit and the comparison result of the theoretical on-time and the actual on-time. Therefore, based on the on-time of the target circuit, the working state of the switch tube in the target circuit is controlled to switch between on and off, and the charging feedback phenomenon of the target circuit is enhanced or suppressed, thereby ensuring that the target circuit can still operate in a high gain state during charging and discharging, thereby improving the working performance of the target circuit.

[0145] based on Figure 1 The system architecture shown below will be combined with Figure 7 and Figure 8 , the circuit control device provided in the embodiment of this specification is introduced in detail. It should be noted that, Figure 7 and Figure 8 The circuit control device in this manual is used to execute Figure 2-Figure 6 For the convenience of explanation, the above control method of the embodiment shown in the specification only shows the part related to the embodiment of the specification. For the specific technical details not disclosed, please refer to the specification. Figure 2-Figure 6 Description of the illustrated embodiment.

[0146] See also Figure 7 , is a schematic diagram of the structure of a circuit control device provided in the embodiment of this specification. Figure 7 As shown, the circuit control device 1 of the embodiment of this specification may include: a theoretical duration acquisition unit 11 , an actual duration acquisition unit 12 , a target duration comparison unit 13 and a switch circuit control unit 14 .

[0147] Theoretical duration acquisition unit 11 is used to acquire the phase lag angle of the equivalent impedance of the resonant circuit and the resonant frequency of the resonant circuit, and obtain the theoretical conduction duration corresponding to the target circuit based on the phase lag angle and the resonant frequency;

[0148] An actual duration acquisition unit 12, used to acquire the load voltage of the load circuit, the power supply voltage of the power supply circuit, the transformation ratio in the target circuit, and the actual conduction duration corresponding to the target circuit;

[0149] a target duration acquisition unit 13, configured to, when the load voltage is less than a target voltage, reduce the actual on-time by a preset unit duration to obtain a first on-time, and determine a target on-time by a first comparison result obtained by comparing the first on-time with the theoretical on-time, wherein the target voltage is obtained by multiplying the power supply voltage by the transformation ratio;

[0150] The target duration acquisition unit 13 is further used for, when the load voltage is greater than the preset voltage, increasing the actual conduction duration by a preset unit duration to obtain a second conduction duration, and determining the target conduction duration based on a second comparison result obtained by comparing the second conduction duration with the half-cycle duration, the preset voltage is obtained by adding the target voltage and a preset voltage reference value, the cycle duration is the conduction period of the resonant circuit, which is calculated according to a preset cycle calculation formula and the resonant frequency, and the half-cycle duration is half of the cycle duration;

[0151] The switch circuit control unit 14 is used to adjust the actual on-time based on the time comparison result to obtain a target on-time, and use the target on-time to control the working state of the switch in the target circuit.

[0152] Optional, such as Figure 8 As shown, the theoretical duration acquisition unit 11 includes:

[0153] The angular velocity acquisition subunit 111 is used to acquire the resonant frequency of the target circuit, and calculate according to a preset angular velocity calculation formula and the resonant frequency to obtain the angular velocity corresponding to the equivalent impedance;

[0154] An equivalent parameter acquisition subunit 112 is used to obtain an equivalent impedance value and an equivalent capacitive reactance value of an equivalent impedance of the target circuit;

[0155] The phase lag angle acquisition subunit 113 is used to calculate according to a preset first calculation formula and the equivalent impedance value and the equivalent capacitive reactance value to obtain the phase lag angle of the equivalent impedance;

[0156] The theoretical duration acquisition subunit 114 is used to calculate according to a preset second calculation formula and the phase lag angle and the angular velocity to obtain a theoretical conduction duration corresponding to the resonant circuit.

[0157] Optionally, the equivalent parameter acquisition subunit 112 is further used for:

[0158] Obtaining the load impedance of the load circuit and the switch tube impedance of the switch tube circuit, and performing calculation based on the load impedance and the switch tube impedance according to a preset third calculation formula to obtain an equivalent impedance value of the equivalent impedance of the target circuit;

[0159] Obtain the equivalent inductance and equivalent capacitance of the resonant circuit, calculate according to the preset fourth calculation formula and the equivalent inductance, the equivalent capacitance, the load impedance, the angular velocity, and the switch tube impedance, and obtain the equivalent capacitance-inductance value corresponding to the target circuit, wherein the equivalent capacitance-inductance value indicates the capacitance value and the inductance value in the target circuit.

[0160] Optionally, the theoretical duration acquisition subunit 114 is further used for:

[0161] Calculating according to a preset fifth calculation formula, the phase lag angle, and the angular velocity to obtain a conduction angle of the equivalent impedance;

[0162] The theoretical conduction time corresponding to the target circuit is obtained by performing calculation according to a preset second calculation formula, the angular velocity, and the conduction angle.

[0163] Optionally, the target duration acquisition unit 13 is further used for:

[0164] Comparing the load voltage with the target voltage, and when the load voltage is less than the target voltage, reducing the actual on-time by a preset unit time to obtain a first on-time;

[0165] Comparing the first on-time with the theoretical on-time to obtain a first comparison result;

[0166] When the first comparison result indicates that the first on-time is greater than the theoretical on-time, determining the first on-time as a target on-time;

[0167] When the first comparison result indicates that the first on-time is less than or equal to the theoretical on-time, the theoretical on-time is determined as the target on-time.

[0168] Optionally, the target duration acquisition unit 13 is further used for:

[0169] Comparing the load voltage with a preset voltage, and when the load voltage is less than the preset voltage, increasing the actual on-time by a preset unit time to obtain a second on-time;

[0170] Compare the second on-time with the half-cycle time to obtain a second comparison result;

[0171] When the second comparison result indicates that the second on-time is greater than the half-cycle time, determining the half-cycle time as the target on-time;

[0172] When the second comparison result indicates that the second on-time duration is less than or equal to the half-cycle duration, the second on-time duration is determined as the target on-time duration.

[0173] Optionally, the target duration acquisition unit 13 is further used for:

[0174] When the load voltage is greater than or equal to the target voltage and less than or equal to the preset voltage, the actual on-time is determined as the target on-time.

[0175] In the embodiments of the present specification, specific circuit parameters of the target circuit are obtained, and the theoretical on-time and the actual on-time are obtained based on these circuit parameters. The target on-time of the target circuit is obtained based on the comparison result of the load voltage and the power supply voltage of the target circuit and the comparison result of the theoretical on-time and the actual on-time. Therefore, based on the on-time of the target circuit, the working state of the switch tube in the target circuit is controlled to switch between on and off, and the charging feedback phenomenon of the target circuit is enhanced or suppressed, thereby ensuring that the target circuit can still operate in a high gain state during charging and discharging, thereby improving the working performance of the target circuit.

[0176] The present specification also provides a computer storage medium, which can store a plurality of program instructions, which are suitable for being loaded and executed by a processor as described above. Figure 1-Figure 6 The method steps of the embodiment shown in the figure can be found in the specific implementation process. Figure 1-Figure 6 The specific description of the illustrated embodiment will not be repeated here.

[0177] See also Fig. 9 , is a schematic diagram of the structure of an electronic device provided in the embodiment of this specification. Fig. 9 As shown, the electronic device 1000 may include: at least one processor 1001, such as a CPU, at least one communication bus 1002, and at least one memory 1003. The communication bus 1002 is used to realize the connection and communication between these components. The memory 1003 may be a high-speed RAM memory or a non-volatile memory, such as at least one disk memory. The memory 1003 may also be at least one storage device located away from the aforementioned processor 1001. Fig. 9 As shown, the memory 1003 as a computer storage medium may include a circuit control application.

[0178] In one embodiment, the processor 1001 may be used to call the circuit control application program stored in the memory 1003, and specifically perform the following operations:

[0179] Acquire a phase lag angle of an equivalent impedance of the target circuit and a resonant frequency of the resonant circuit, and obtain a theoretical conduction time corresponding to the target circuit based on the phase lag angle and the resonant frequency;

[0180] Obtaining a load voltage of the load circuit, a power supply voltage of the power supply circuit, a transformation ratio in the target circuit, and an actual conduction time corresponding to the target circuit;

[0181] When the load voltage is less than the target voltage, the actual on-time is reduced by a preset unit time to obtain a first on-time, and a target on-time is determined based on a first comparison result obtained by comparing the first on-time with the theoretical on-time, wherein the target voltage is obtained based on the power supply voltage and the transformation ratio;

[0182] When the load voltage is greater than the preset voltage, the actual on-time is increased by a preset unit time to obtain a second on-time, and the target on-time is determined based on a second comparison result obtained by comparing the second on-time with the half-cycle time, the preset voltage is obtained based on the target voltage and a preset voltage reference value, the cycle time is the on-time of the resonant circuit, which is calculated according to a preset cycle calculation formula and the resonant frequency, and the half-cycle time is half of the cycle time;

[0183] The target on-time is used to control the working state of the switch tube in the target circuit.

[0184] Optionally, when the processor 1001 acquires the phase lag angle of the equivalent impedance and the resonant frequency of the resonant circuit, and obtains the theoretical on-time corresponding to the target circuit based on the phase lag angle and the resonant frequency, the processor 1001 specifically performs the following operations:

[0185] Obtaining the resonant frequency of the resonant circuit, and calculating according to a preset angular velocity calculation formula and the resonant frequency to obtain the angular velocity corresponding to the equivalent impedance;

[0186] Obtaining an equivalent impedance value and an equivalent capacitive reactance value of an equivalent impedance of the target circuit;

[0187] Calculate according to a preset first calculation formula and the equivalent impedance value and the equivalent capacitive reactance value to obtain a phase lag angle of the equivalent impedance;

[0188] The theoretical conduction time corresponding to the resonant circuit is obtained by performing calculation according to a preset second calculation formula, the phase lag angle, and the angular velocity.

[0189] Optionally, when executing the acquisition of an equivalent impedance value and an equivalent capacitive reactance value of an equivalent impedance of the target circuit, the processor 1001 specifically performs the following operations:

[0190] Obtaining the load impedance of the load circuit and the switch tube impedance of the switch tube circuit, and performing calculation based on the load impedance and the switch tube impedance according to a preset third calculation formula to obtain an equivalent impedance value of the equivalent impedance of the target circuit;

[0191] Obtain the equivalent inductance and equivalent capacitance of the resonant circuit, calculate according to the preset fourth calculation formula and the equivalent inductance, the equivalent capacitance, the load impedance, the angular velocity, and the switch tube impedance, and obtain the equivalent capacitance-inductance value corresponding to the target circuit, wherein the equivalent capacitance-inductance value indicates the capacitance value and the inductance value in the target circuit.

[0192] Optionally, when the processor 1001 performs the calculation according to the preset second calculation formula, the phase lag angle, and the resonant frequency to obtain the theoretical on-time corresponding to the target circuit, the following operations are specifically performed:

[0193] Calculating according to a preset fifth calculation formula, the phase lag angle, and the angular velocity to obtain a conduction angle of the equivalent impedance;

[0194] The theoretical conduction time corresponding to the target circuit is obtained by performing calculation according to a preset second calculation formula, the angular velocity, and the conduction angle.

[0195] Optionally, when the processor 1001 reduces the actual on-time by a preset unit time to obtain a first on-time when the load voltage is less than the target voltage, and determines the target on-time based on a first comparison result obtained by comparing the first on-time with the theoretical on-time, the following operations are specifically performed:

[0196] Comparing the load voltage with the target voltage, and when the load voltage is less than the target voltage, reducing the actual on-time by a preset unit time to obtain a first on-time;

[0197] Comparing the first on-time with the theoretical on-time to obtain a first comparison result;

[0198] When the first comparison result indicates that the first on-time is greater than the theoretical on-time, determining the first on-time as a target on-time;

[0199] When the first comparison result indicates that the first on-time is less than or equal to the theoretical on-time, the theoretical on-time is determined as the target on-time.

[0200] Optionally, when the processor 1001 increases the actual on-time by a preset unit time to obtain a second on-time when the load voltage is greater than a preset voltage, and determines the target on-time based on a second comparison result obtained by comparing the second on-time with the cycle time, the following operations are specifically performed:

[0201] Comparing the load voltage with a preset voltage, and when the load voltage is less than the preset voltage, increasing the actual on-time by a preset unit time to obtain a second on-time;

[0202] Compare the second on-time with the half-cycle time to obtain a second comparison result;

[0203] When the second comparison result indicates that the second on-time is greater than the half-cycle time, determining the half-cycle time as the target on-time;

[0204] When the second comparison result indicates that the second on-time duration is less than or equal to the half-cycle duration, the second on-time duration is determined as the target on-time duration.

[0205] Optionally, the processor 1001 further performs the following operations:

[0206] When the load voltage is greater than or equal to the target voltage and less than or equal to the preset voltage, the actual on-time is determined as the target on-time.

[0207] In the embodiments of the present specification, specific circuit parameters of the target circuit are obtained, and the theoretical on-time and the actual on-time are obtained based on these circuit parameters. The target on-time of the target circuit is obtained based on the comparison result of the load voltage and the power supply voltage of the target circuit and the comparison result of the theoretical on-time and the actual on-time. Therefore, based on the on-time of the target circuit, the working state of the switch tube in the target circuit is controlled to switch between on and off, and the charging feedback phenomenon of the target circuit is enhanced or suppressed, thereby ensuring that the target circuit can still operate in a high gain state during charging and discharging, thereby improving the working performance of the target circuit.

[0208] A person skilled in the art can understand that all or part of the processes in the above-mentioned embodiments can be implemented by instructing the relevant hardware through a computer program, and the program can be stored in a computer-readable storage medium, and when the program is executed, it can include the processes of the embodiments of the above-mentioned methods. The storage medium can be a disk, an optical disk, a read-only memory (ROM) or a random access memory (RAM), etc.

[0209] The above disclosure is only the preferred embodiment of this specification, which certainly cannot be used to limit the scope of rights of this specification. Therefore, equivalent changes made according to the claims of this specification are still within the scope covered by this specification.

Claims

1. A circuit control method, characterized in that: The method is applied to a control circuit, the control circuit includes a target circuit and a power circuit, the target circuit includes a load circuit and a resonant circuit, the target circuit is obtained by equivalent conversion of an original circuit, the resonant circuit includes a transformer, the target circuit is connected to the power circuit, and the method includes: Acquire a phase lag angle of an equivalent impedance of the target circuit and a resonant frequency of the resonant circuit, and obtain a theoretical conduction time corresponding to the target circuit based on the phase lag angle and the resonant frequency; Obtaining a load voltage of the load circuit, a power supply voltage of the power supply circuit, a transformation ratio in the target circuit, and an actual conduction time corresponding to the target circuit; When the load voltage is less than the target voltage, the actual on-time is reduced by a preset unit time to obtain a first on-time, and a target on-time is determined based on a first comparison result obtained by comparing the first on-time with the theoretical on-time, wherein the target voltage is obtained based on the power supply voltage and the transformation ratio; When the load voltage is greater than the preset voltage, the actual on-time is increased by a preset unit time to obtain a second on-time, and the target on-time is determined based on a second comparison result obtained by comparing the second on-time with the half-cycle time, the preset voltage is obtained based on the target voltage and a preset voltage reference value, the cycle time is the on-time of the resonant circuit, which is calculated according to a preset cycle calculation formula and the resonant frequency, and the half-cycle time is half of the cycle time; The target on-time is used to control the working state of the switch tube in the target circuit.

2. The method according to claim 1, characterized in that The acquiring the phase lag angle of the equivalent impedance and the resonant frequency of the resonant circuit, and obtaining the theoretical conduction time corresponding to the target circuit based on the phase lag angle and the resonant frequency, comprises: Obtaining the resonant frequency of the resonant circuit, and calculating according to a preset angular velocity calculation formula and the resonant frequency to obtain the angular velocity corresponding to the equivalent impedance; Obtaining an equivalent impedance value and an equivalent capacitive reactance value of an equivalent impedance of the target circuit; Calculate according to a preset first calculation formula and the equivalent impedance value and the equivalent capacitive reactance value to obtain a phase lag angle of the equivalent impedance; The theoretical conduction time corresponding to the resonant circuit is obtained by performing calculation according to a preset second calculation formula, the phase lag angle, and the angular velocity.

3. The method according to claim 2, characterized in that The resonant circuit further includes a switch tube circuit, and the switch tube circuit includes at least one switch tube; The obtaining of an equivalent impedance value and an equivalent capacitive reactance value of an equivalent impedance of the target circuit includes: Obtaining the load impedance of the load circuit and the switch tube impedance of the switch tube circuit, and performing calculation based on the load impedance and the switch tube impedance according to a preset third calculation formula to obtain an equivalent impedance value of the equivalent impedance of the target circuit; Obtain the equivalent inductance and equivalent capacitance of the resonant circuit, calculate according to the preset fourth calculation formula and the equivalent inductance, the equivalent capacitance, the load impedance, the angular velocity, and the switch tube impedance, and obtain the equivalent capacitance-inductance value corresponding to the target circuit, wherein the equivalent capacitance-inductance value indicates the capacitance value and the inductance value in the target circuit.

4. The method according to claim 2, characterized in that: The calculating according to the preset second calculation formula, the phase lag angle, and the resonant frequency to obtain the theoretical conduction time corresponding to the target circuit includes: Calculating according to a preset fifth calculation formula, the phase lag angle, and the angular velocity to obtain a conduction angle of the equivalent impedance; The theoretical conduction time corresponding to the target circuit is obtained by performing calculation according to a preset second calculation formula, the angular velocity, and the conduction angle.

5. The method according to claim 1, characterized in that When the load voltage is less than the target voltage, the actual on-time is reduced by a preset unit time to obtain a first on-time, and a target on-time is determined based on a first comparison result obtained by comparing the first on-time with the theoretical on-time, including: Comparing the load voltage with the target voltage, and when the load voltage is less than the target voltage, reducing the actual on-time by a preset unit time to obtain a first on-time; Comparing the first on-time with the theoretical on-time to obtain a first comparison result; When the first comparison result indicates that the first on-time is greater than the theoretical on-time, determining the first on-time as a target on-time; When the first comparison result indicates that the first on-time is less than or equal to the theoretical on-time, the theoretical on-time is determined as the target on-time.

6. The method according to claim 1, characterized in that When the load voltage is greater than a preset voltage, the actual on-time is increased by a preset unit time to obtain a second on-time, and the target on-time is determined based on a second comparison result obtained by comparing the second on-time with the cycle time, including: Comparing the load voltage with a preset voltage, and when the load voltage is less than the preset voltage, increasing the actual on-time by a preset unit time to obtain a second on-time; Compare the second on-time with the half-cycle time to obtain a second comparison result; When the second comparison result indicates that the second on-time is greater than the half-cycle time, determining the half-cycle time as the target on-time; When the second comparison result indicates that the second on-time duration is less than or equal to the half-cycle duration, the second on-time duration is determined as the target on-time duration.

7. The method according to claim 1, characterized in that The method further comprises: When the load voltage is greater than or equal to the target voltage and less than or equal to the preset voltage, the actual on-time is determined as the target on-time.

8. A circuit control device, characterized in that: The device comprises: A theoretical duration acquisition unit, used to acquire a phase lag angle of an equivalent impedance of a target circuit and a resonant frequency of a resonant circuit, and obtain a theoretical conduction duration corresponding to the target circuit based on the phase lag angle and the resonant frequency; an actual duration acquisition unit, used to acquire the load voltage of the load circuit, the power supply voltage of the power supply circuit, the transformation ratio in the target circuit, and the actual conduction duration corresponding to the target circuit; a target duration acquisition unit, configured to, when the load voltage is less than a target voltage, reduce the actual on-time by a preset unit duration to obtain a first on-time, and determine a target on-time by a first comparison result obtained by comparing the first on-time with the theoretical on-time, wherein the target voltage is obtained by multiplying the power supply voltage by the transformation ratio; The target duration acquisition unit is further used for, when the load voltage is greater than the preset voltage, increasing the actual conduction duration by a preset unit duration to obtain a second conduction duration, and determining the target conduction duration based on a second comparison result obtained by comparing the second conduction duration with the half-cycle duration, the preset voltage is obtained by adding the target voltage and a preset voltage reference value, the cycle duration is the conduction period of the resonant circuit, which is calculated according to a cycle calculation formula and the resonant frequency, and the half-cycle duration is half of the cycle duration; A switch circuit control unit is used to control the working state of the switch tube in the target circuit by using the target conduction time.

9. A computer storage medium storing a plurality of instructions, wherein the instructions are suitable for being loaded by a processor and executing the steps of the method according to any one of claims 1 to 7.

10. An electronic device comprising: A processor and a memory; wherein the memory stores a computer program, and the computer program is suitable for being loaded by the processor and executing the steps of the method according to any one of claims 1 to 7.

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