Mask Imaging Method, Device, Storage Medium and Electronic Device

Abstract

The present application discloses a mask imaging method, apparatus, storage medium and electronic device. Among them, the mask imaging method includes obtaining the geometric shape and characteristic information of a mask, where the mask includes at least two layers of media; based on the characteristic information, using the transfer matrix method to calculate the transfer matrix of each layer of media to obtain the total transfer matrix of the mask; based on the total transfer matrix, correcting the initial incident field to obtain a target incident field; according to the target incident field, calculating the diffraction near-field intensity of each point of the mask; according to the diffraction near-field intensity and the geometric shape, generating a spatial image of the mask through a preset imaging method. This solution can improve the accuracy of mask imaging.

Description

Technical Field

[0001] The embodiments of the present application relate to the field of mask technology, and more particularly to a mask imaging method, apparatus, storage medium, and electronic device. Background Art

[0002] In lithography technology, a mask is used to modulate incident light to form a desired micro-nano pattern on a wafer. As the integrated circuit process enters the advanced nodes of 7 nm and below, the diffraction effect of the lithography mask on the imaging quality increases significantly, and the traditional Thin Mask Model has difficulty meeting the high-precision imaging requirements. Summary of the Invention

[0003] The embodiments of the present application provide a mask imaging method, apparatus, storage medium, and electronic device, which can improve the accuracy of mask imaging.

[0004] In a first aspect, the embodiments of the present application provide a mask imaging method, including:

[0005] Obtaining the geometric shape and characteristic information of a mask, where the mask includes at least two layers of media;

[0006] Based on the characteristic information, using the transfer matrix method to calculate the transfer matrix of each layer of the media to obtain the total transfer matrix of the mask;

[0007] Based on the total transfer matrix, correcting the initial incident field to obtain a target incident field;

[0008] According to the target incident field, calculating the diffraction near-field intensity of each point of the mask;

[0009] According to the diffraction near-field intensity and the geometric shape, generating a spatial image of the mask through a preset imaging method.

[0010] In the mask imaging method provided by the embodiments of the present application, the step of using the transfer matrix method to calculate the transfer matrix of each layer of the media based on the characteristic information to obtain the total transfer matrix of the mask includes:

[0011] According to the characteristic information, calculating the phase delay and amplitude attenuation of light in each layer of the media to obtain the transfer matrix of each layer of the media;

[0012] Recursively combining the transfer matrices of each layer of the media to obtain the total transfer matrix of the mask.

[0013] In the mask imaging method provided by the embodiments of the present application, the characteristic information includes the thickness, refractive index, and absorption coefficient of each layer of the media;

[0014] Calculating the phase delay and amplitude attenuation of light in each layer of the medium according to the feature information to obtain the transmission matrix of each layer of the medium, including:

[0015] Calculating the phase delay of light in each layer of the medium according to the refractive index, the thickness of each layer of the medium, and the wavelength of light;

[0016] Calculating the amplitude attenuation of light in each layer of the medium according to the absorption coefficient and the thickness of each layer of the medium;

[0017] Representing the phase delay and the amplitude attenuation in matrix form to obtain the transmission matrix of each layer of the medium.

[0018] In the mask imaging method provided in the embodiments of the present application, the correcting the initial incident field based on the total transmission matrix to obtain the target incident field includes:

[0019] Extracting the phase delay and the amplitude attenuation from the total transmission matrix;

[0020] Correcting the initial incident field according to the phase delay and the amplitude attenuation to obtain the target incident field.

[0021] In the mask imaging method provided in the embodiments of the present application, calculating the diffraction near-field intensity of each point of the mask according to the target incident field includes:

[0022] Substituting the target incident field into the diffraction near-field calculation formula to calculate the diffraction near-field intensity of each point of the mask.

[0023] In the mask imaging method provided in the embodiments of the present application, substituting the target incident field into the diffraction near-field calculation formula to calculate the diffraction near-field intensity of each point of the mask includes:

[0024] Calculating the spatial angular spectrum of the target incident field;

[0025] Propagating the spatial angular spectrum based on the propagation factor and calculating the diffraction near-field intensity of each point of the mask based on the propagated spatial angular spectrum.

[0026] In the mask imaging method provided in the embodiments of the present application, calculating the diffraction near-field intensity of each point of the mask based on the propagated spatial angular spectrum includes:

[0027] Performing an inverse Fourier transform on the propagated spatial angular spectrum to obtain the diffraction light field of each point of the mask;

[0028] Calculating the diffraction near-field intensity of each point of the mask according to the diffraction light field.

[0029] Second aspect, an embodiment of the present application provides a mask imaging device, including:

[0030] A mask acquisition unit, configured to acquire the geometric shape and feature information of a mask, where the mask includes at least two layers of media;

[0031] A matrix calculation unit, configured to calculate the transmission matrix of each layer of the media using the transfer matrix method based on the feature information to obtain the total transmission matrix of the mask;

[0032] An optical field correction unit, configured to correct an initial incident field based on the total transmission matrix to obtain a target incident field;

[0033] A field strength calculation unit, configured to calculate the diffraction near-field intensity of each point of the mask according to the target incident field;

[0034] A mask imaging unit, configured to generate a spatial image of the mask by a preset imaging method according to the diffraction near-field intensity and the geometric shape.

[0035] Third aspect, the present application provides a storage medium, which stores multiple instructions, and the instructions are suitable for being loaded by a processor to execute the mask imaging method described in any one of the above.

[0036] Fourth aspect, the present application provides an electronic device, including a memory, a processor, and a computer program stored on the memory and executable on the processor. When the processor executes the computer program, the mask imaging method described in any one of the above is implemented.

[0037] In summary, the mask imaging method provided by the embodiment of the present application includes acquiring the geometric shape and feature information of a mask, where the mask includes at least two layers of media; calculating the transmission matrix of each layer of the media using the transfer matrix method based on the feature information to obtain the total transmission matrix of the mask; correcting an initial incident field based on the total transmission matrix to obtain a target incident field; calculating the diffraction near-field intensity of each point of the mask according to the target incident field; and generating a spatial image of the mask by a preset imaging method according to the diffraction near-field intensity and the geometric shape. By calculating the diffraction near-field intensity of the mask, this solution can optimize the mask pattern to reduce optical aberration and improve the accuracy of mask imaging. Description of the Drawings

[0038] To more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the following drawings are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative efforts.

[0039] Figure 1 It is a schematic diagram of an application scenario of the mask imaging method provided by an embodiment of the present application.

[0040] Figure 2 It is a schematic flowchart of the mask imaging method provided by an embodiment of the present application.

[0041] Figure 3 It is a schematic structural diagram of the mask imaging device provided by an embodiment of the present application.

[0042] Figure 4 It is a schematic structural diagram of the electronic device provided by an embodiment of the present application. Detailed implementation manners

[0043] Here, the exemplary embodiments will be described in detail, and the examples are shown in the drawings. When the following description refers to the drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements. The implementation manners described in the following exemplary embodiments do not represent all implementation manners consistent with the present application. On the contrary, they are merely examples of devices and methods consistent with some aspects of the present application as detailed in the appended claims.

[0044] It should be noted that in this article, the term "including", "comprising" or any other variant thereof is intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements not only includes those elements, but also includes other elements not expressly listed, or further includes elements inherent to such process, method, article or device. Without further limitation, an element defined by the statement "including a..." does not exclude the existence of additional identical elements in the process, method, article or device including that element. In addition, components, features, and elements with the same name in different embodiments of the present application may have the same meaning or different meanings, and their specific meanings need to be determined based on their explanations in the specific embodiments or further in combination with the context of the specific embodiments.

[0045] It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0046] In subsequent descriptions, suffixes such as "module", "component" or "unit" used to represent elements are only for the convenience of description of the present application, and they have no specific meaning in themselves. Therefore, "module", "component" or "unit" can be used interchangeably.

[0047] In the description of the present application, it should be noted that the orientation or positional relationship indicated by the terms "upper", "lower", "left", "right", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings. It is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation to the present application. In addition, terms such as "first" and "second" are only used for descriptive purposes and should not be construed as indicating or implying relative importance.

[0048] As the integrated circuit process enters advanced nodes of 7nm and below, the diffraction effect of the lithography mask on the imaging quality increases significantly, and the traditional thin mask model is difficult to meet the high-precision imaging requirements.

[0049] Based on this, the embodiments of the present application provide a mask imaging method, device, storage medium, and electronic device. Specifically, the mask imaging device can be integrated in an electronic device, which can be a server or a terminal device, etc. Among them, the terminal can include a mobile phone, a wearable intelligent device, a tablet computer, a laptop computer, and a personal computer (PC), etc.; the server can be a single server or a server cluster composed of multiple servers, which can be a physical server or a virtual server.

[0050] For example, as Figure 1 shown, after the electronic device obtains the geometric shape and characteristic information of the mask, based on the characteristic information, the transfer matrix method can be used to calculate the transfer matrix of each layer of the medium to obtain the total transfer matrix of the mask; then, the initial incident field is corrected based on the total transfer matrix to obtain the target incident field; then, according to the target incident field, the diffraction near-field intensity of each point of the mask is calculated; finally, according to the diffraction near-field intensity and the geometric shape of the mask, the spatial image of the mask is generated through a preset imaging method.

[0051] The technical solutions shown in the present application will be described in detail below through specific embodiments. It should be noted that the description order of the following embodiments does not limit the priority order of the embodiments.

[0052] Please refer to Figure 2 , Figure 2 which is a schematic flow chart of the mask imaging method provided by the embodiments of the present application. The specific process of the mask imaging method can be as follows:

[0053] 101. Obtain the geometric shape and characteristic information of the mask, where the mask includes at least two layers of media.

[0054] Specifically, the mask file can be read and parsed from the lithography system to obtain the geometric shape and characteristic information of the mask.

[0055] Among them, the characteristic information includes the thickness and optical properties of each layer of the medium, etc. The optical properties of the medium can include refractive index and absorption coefficient, etc., which can determine the propagation behavior of light. The thickness of the medium determines the phase change when light passes through the medium. The mask is usually composed of multiple different dielectric layers, such as a chromium layer and a glass layer.

[0056] In the embodiment of the present application, the thickness of each layer of the medium of the mask is evenly distributed.

[0057] 102. Calculate the transfer matrix of each layer of the medium using the transfer matrix method to obtain the total transfer matrix of the mask.

[0058] The basic idea of the transfer matrix method (TMM) in the embodiment of the present application is to represent the phase delay and amplitude attenuation when light passes through each layer of the medium with a matrix. The light propagation of each layer of the medium can be represented by a transfer matrix, and this matrix describes the phase delay and amplitude attenuation of light.

[0059] For the transmission of light in each layer of the medium, it can be represented by matrix multiplication. The propagation effect of light in each layer of the medium depends on the output of the previous layer of the medium. For example, if the mask has two layers of media (chromium layer and glass layer), its total transfer matrix M total is the product of the transfer matrices of each layer: M total = M 1 · M 2 .

[0060] Among them, M 1 is the transfer matrix of the chromium layer, and M 2 is the transfer matrix of the glass layer. It should be noted that when calculating the transfer matrix, the incident angle and wavelength of light also need to be considered, and the propagation speed of light in different media is different.

[0061] In the transfer matrix method, the propagation of light is jointly determined by the phase delay and amplitude attenuation. The phase delay is caused by the change in the refractive index of the medium and the layer thickness, while the amplitude attenuation is caused by the absorption of light in the medium.

[0062] Therefore, step 102 can specifically be to calculate the phase delay and amplitude attenuation of light in each layer of the medium according to the characteristic information to obtain the transfer matrix of each layer of the medium; and recursively combine the transfer matrices of each layer of the medium to obtain the total transfer matrix of the mask.

[0063] In each layer, light will undergo a phase change due to the refractive index and thickness of the medium. The phase delay ( ) can be calculated by the following formula: Among them, n is the refractive index of the medium, h is the thickness of the medium, and λ is the wavelength of light. That is, the phase delay of light in each layer of the medium can be calculated according to the refractive index, thickness of each layer of the medium, and the wavelength of light.

[0064] During the propagation of light, there will be a certain amount of absorption, and the amplitude attenuation is usually determined by the absorption coefficient k of the medium. The amplitude attenuation can be calculated by the following formula: A = e −k·h . Among them, A is the attenuation factor, k is the absorption coefficient of the medium, and h is the thickness of the medium. That is, the amplitude attenuation of light in each layer of the medium can be calculated according to the absorption coefficient and thickness of each layer of the medium.

[0065] After that, the phase delay and amplitude attenuation of light in each layer of the medium are represented by a matrix, and the transmission matrix of each layer of the medium can be obtained.

[0066] 103. Based on the total transmission matrix, the initial incident field is corrected to obtain the target incident field.

[0067] Specifically, the phase delay and amplitude attenuation can be extracted from the total transmission matrix; then, the initial incident field is corrected according to the phase delay and amplitude attenuation to obtain the target incident field.

[0068] It should be noted that the initial incident field is the same as the light in the process of forming the transmission matrix.

[0069] 104. According to the target incident field, calculate the diffraction near-field intensity of each point on the mask.

[0070] Specifically, the target incident field can be substituted into the diffraction near-field calculation formula to calculate the diffraction near-field intensity of each point on the mask.

[0071] In some embodiments, the spatial angular spectrum of the target incident field can be calculated; then, the spatial angular spectrum is propagated based on the propagation factor, and the diffraction near-field intensity of each point on the mask is calculated based on the propagated spatial angular spectrum.

[0072] Among them, the two-dimensional Fourier transform can be performed on the target incident field to obtain the spatial angular spectrum. For example, the target incident field is E corrected (x, y), and the two-dimensional Fourier transform of E corrected (x, y) to obtain the spatial angular spectrum can be specifically as follows:

[0073] E spatial (k x , k y ) = F{E corrected (x, y)}

[0074] Propagating the spatial angular spectrum based on the propagation factor means converting the propagation of the spatial angular spectrum into a description by a wavenumber domain transfer function. Specifically, multiplying the spatial angular spectrum by the propagation factor can obtain the propagated spatial angular spectrum.

[0075] In some embodiments, the inverse Fourier transform can be performed on the propagated spatial angular spectrum to obtain the diffracted light field at each point of the mask. Then, the diffracted near-field intensity at each point of the mask can be calculated according to the diffracted light field. Among them, the square of the amplitude of the diffracted light field is the diffracted near-field intensity at each point.

[0076] 105. Generate the spatial image of the mask through a preset imaging method based on the diffracted near-field intensity and the geometric shape.

[0077] For example, an optical imaging system model can be built based on the diffracted near-field intensity and the geometric shape, the transfer function of the imaging lens (such as convolutional PSF) can be introduced, and the numerical aperture (NA) and imaging magnification of the system can be considered for spatial image simulation.

[0078] In summary, the mask imaging method provided by the embodiments of the present application includes obtaining the geometric shape and characteristic information of the mask, where the mask includes at least two layers of media; calculating the transfer matrix of each layer of media using the transfer matrix method based on the characteristic information to obtain the total transfer matrix of the mask; correcting the initial incident field based on the total transfer matrix to obtain the target incident field; calculating the diffracted near-field intensity at each point of the mask according to the target incident field; generating the spatial image of the mask through a preset imaging method based on the diffracted near-field intensity and the geometric shape. This solution uses the transfer matrix method to correct the phase and amplitude effects on the incident field caused by the thickness and optical properties of each layer of media in the mask, improves the accuracy of the diffracted near-field intensity, thereby optimizing the mask pattern to reduce optical aberration and improve the accuracy of mask imaging.

[0079] To facilitate better implementation of the mask imaging method provided by the embodiments of the present application, the embodiments of the present application also provide a mask imaging device. The meanings of the terms are the same as those in the above mask imaging method, and the specific implementation details can refer to the description in the method embodiments.

[0080] Please refer to Figure 3 , Figure 3 which is a schematic structural diagram of the mask imaging device provided by the embodiments of the present application. The mask imaging device may include a mask acquisition unit 201, a matrix calculation unit 202, a light field correction unit 203, a field intensity calculation unit 204, and a mask imaging unit 205. Among them,

[0081] The mask acquisition unit 201 is configured to obtain the geometric shape and characteristic information of the mask, where the mask includes at least two layers of media;

[0082] A matrix calculation unit 202 is configured to calculate the transfer matrix of each layer of medium using the transfer matrix method based on the feature information, so as to obtain the total transfer matrix of the mask.

[0083] An optical field correction unit 203 is configured to correct the initial incident field based on the total transfer matrix to obtain a target incident field.

[0084] A field strength calculation unit 204 is configured to calculate the diffraction near-field intensity of each point of the mask according to the target incident field.

[0085] A mask imaging unit 205 is configured to generate a spatial image of the mask by a preset imaging method according to the diffraction near-field intensity and the geometric shape.

[0086] For the specific implementation manners of the above units, reference may be made to the embodiments of the above mask imaging method, which will not be elaborated herein one by one.

[0087] In summary, the mask imaging device provided by the embodiment of the present application can obtain the geometric shape and feature information of the mask through the mask acquisition unit 201, and the mask includes at least two layers of medium; the matrix calculation unit 202 calculates the transfer matrix of each layer of medium using the transfer matrix method based on the feature information to obtain the total transfer matrix of the mask; the optical field correction unit 203 corrects the initial incident field based on the total transfer matrix to obtain a target incident field; the field strength calculation unit 204 calculates the diffraction near-field intensity of each point of the mask according to the target incident field; the mask imaging unit 205 generates a spatial image of the mask by a preset imaging method according to the diffraction near-field intensity and the geometric shape. This solution corrects the phase and amplitude effects on the incident field caused by the thickness and optical properties of each layer of medium in the mask using the transfer matrix method, improves the accuracy of the diffraction near-field intensity, thereby optimizing the mask pattern to reduce optical aberration and improve the accuracy of mask imaging.

[0088] The embodiment of the present application further provides an electronic device, which may integrate the mask imaging device of the embodiment of the present application. As Figure 4 shown, it shows a schematic structural diagram of the electronic device involved in the embodiment of the present application. Specifically:

[0089] The electronic device may include components such as a processor 301 with one or more processing cores and a memory 302 with one or more computer-readable storage media. Those skilled in the art can understand that Figure 4 the structural diagram of the electronic device shown in

[0090] The processor 301 is the control center of the electronic device, connecting various parts of the entire electronic device through various interfaces and circuits. By running or executing software programs and / or the present application stored in the memory 302, and calling the data stored in the memory 302, it executes various functions of the electronic device and processes data, thereby monitoring the electronic device as a whole. Optionally, the processor 301 may include one or more processing cores; preferably, the processor 301 may integrate an application processor and a modem processor. Among them, the application processor mainly processes operating storage media, user interfaces, application programs, etc., and the modem processor mainly processes wireless communications. It can be understood that the above-mentioned modem processor may not be integrated into the processor 301 either.

[0091] The memory 302 can be used to store software programs and the present application. The processor 301 executes various functional applications and data processing by running the software programs and the present application stored in the memory 302. The memory 302 may mainly include a program storage area and a data storage area. Among them, the program storage area can store operating storage media, application programs required for at least one function, etc.; the data storage area can store data created according to the use of the electronic device, etc. In addition, the memory 302 may include high-speed random access memory, and may also include non-volatile memory, such as at least one magnetic disk storage device, a flash memory device, or other volatile solid-state storage devices. Correspondingly, the memory 302 may also include a memory controller to provide the processor 301 with access to the memory 302.

[0092] Although not shown, the electronic device may also include a display unit, an input unit, a power supply, etc., which will not be elaborated here. Specifically, in this embodiment, the processor 301 in the electronic device will load the executable files corresponding to the processes of one or more application programs into the memory 302 according to the following instructions, and the processor 301 will run the application programs stored in the memory 302 to implement various functions as follows:

[0093] Obtain the geometric shape and characteristic information of the mask, where the mask includes at least two layers of media;

[0094] Based on the characteristic information, use the transfer matrix method to calculate the transfer matrix of each layer of media to obtain the total transfer matrix of the mask;

[0095] Based on the total transfer matrix, correct the initial incident field to obtain the target incident field;

[0096] According to the target incident field, calculate the diffraction near-field intensity of each point on the mask;

[0097] According to the diffraction near-field intensity and the geometric shape, generate the spatial image of the mask through a preset imaging method.

[0098] Those of ordinary skill in the art can understand that all or part of the steps in the various methods of the above embodiments can be completed by instructions, or by controlling relevant hardware through instructions. The instructions can be stored in a computer-readable storage medium and loaded and executed by a processor.

[0099] For this reason, an embodiment of the present application provides a storage medium in which multiple instructions are stored. These instructions can be loaded by a processor to execute the steps in any one of the methods provided by the embodiments of the present application. For example, the instructions can perform the following steps:

[0100] Obtain the geometric shape and feature information of a mask, where the mask includes at least two layers of media;

[0101] Based on the feature information, use the transfer matrix method to calculate the transfer matrix of each layer of media to obtain the total transfer matrix of the mask;

[0102] Based on the total transfer matrix, correct the initial incident field to obtain the target incident field;

[0103] According to the target incident field, calculate the diffraction near-field intensity of each point on the mask;

[0104] According to the diffraction near-field intensity and the geometric shape, generate a spatial image of the mask through a preset imaging method.

[0105] For the specific implementation of each of the above operations, reference can be made to the previous embodiments, which will not be elaborated here.

[0106] Among them, the storage medium may include: read-only memory (ROM, Read Only Memory), random access memory (RAM, Random Access Memory), magnetic disk or optical disk, etc.

[0107] Since the instructions stored in the storage medium can execute the steps in any one of the methods provided by the embodiments of the present application, the beneficial effects that can be achieved by any one of the methods provided by the embodiments of the present application can be realized. For details, refer to the previous embodiments, which will not be elaborated here.

[0108] The mask imaging method, device, storage medium, and electronic device provided by the present application have been introduced in detail above. Specific examples are used in this article to elaborate on the principle and implementation manner of the present application. The description of the above embodiments is only used to help understand the core idea of the present application; at the same time, for those skilled in the art, according to the idea of the present application, there will be changes in the specific implementation manner and application scope. In summary, the content of this specification should not be construed as a limitation to the present application.

Claims

1. A mask imaging method, characterized in that: include: Acquiring geometric shape and feature information of a mask, wherein the mask includes at least two layers of medium; Based on the characteristic information, a transmission matrix method is used to calculate a transmission matrix of each layer of the medium to obtain a total transmission matrix of the mask; Correcting the initial incident field based on the total transmission matrix to obtain a target incident field; Calculating the diffraction near-field intensity of each point of the mask according to the target incident field; An aerial image of the mask is generated by a preset imaging method according to the diffraction near-field intensity and the geometric shape.

2. The mask imaging method according to claim 1, characterized in that: The step of calculating the transmission matrix of each layer of the medium using a transmission matrix method based on the characteristic information to obtain a total transmission matrix of the mask includes: According to the characteristic information, the phase delay and amplitude attenuation of the light in each layer of the medium are calculated to obtain a transmission matrix of each layer of the medium; The transmission matrix of each layer of the medium is recursively combined to obtain the total transmission matrix of the mask.

3. The mask imaging method according to claim 2, characterized in that: The characteristic information includes the thickness, refractive index and absorption coefficient of each layer of the medium; The step of calculating the phase delay and amplitude attenuation of light in each layer of the medium according to the characteristic information to obtain a transmission matrix of each layer of the medium includes: Calculating the phase delay of the light in each layer of the medium according to the refractive index of each layer of the medium, the thickness and the wavelength of the light; Calculate the amplitude attenuation of light in each layer of the medium according to the absorption coefficient and the thickness of each layer of the medium; The phase delay and the amplitude attenuation are expressed by a matrix to obtain a transmission matrix of each layer of the medium.

4. The mask imaging method according to claim 3, characterized in that: The correcting the initial incident field based on the total transmission matrix to obtain the target incident field includes: extracting the phase delay and the amplitude attenuation from the total transmission matrix; The initial incident field is corrected according to the phase delay and the amplitude attenuation to obtain a target incident field.

5. The mask imaging method according to claim 1, characterized in that: Calculating the diffraction near-field intensity of each point of the mask according to the target incident field includes: Substitute the target incident field into the diffraction near field calculation formula to calculate the diffraction near field intensity of each point of the mask.

6. The mask imaging method according to claim 5, characterized in that: Substituting the target incident field into a diffraction near field calculation formula to calculate the diffraction near field intensity of each point of the mask includes: Calculating the spatial angular spectrum of the target incident field; The spatial angular spectrum is propagated based on the propagation factor, and the diffraction near-field intensity of each point of the mask is calculated based on the propagated spatial angular spectrum.

7. The mask imaging method according to claim 6, characterized in that: The calculating the diffraction near-field intensity of each point of the mask based on the propagated spatial angular spectrum comprises: Performing inverse Fourier transform on the propagated spatial angular spectrum to obtain the diffraction light field of each point of the mask; The diffraction near-field intensity of each point of the mask is calculated according to the diffraction light field.

8. A mask imaging device, characterized in that: include: A mask acquisition unit, used to acquire geometric shape and feature information of a mask, wherein the mask includes at least two layers of medium; A matrix calculation unit, configured to calculate a transmission matrix of each layer of the medium using a transmission matrix method based on the characteristic information to obtain a total transmission matrix of the mask; A light field correction unit, configured to correct the initial incident field based on the total transmission matrix to obtain a target incident field; A field intensity calculation unit, used to calculate the diffraction near-field intensity of each point of the mask according to the target incident field; The mask imaging unit is used to generate an aerial image of the mask by a preset imaging method according to the diffraction near-field intensity and the geometric shape.

9. A storage medium, characterized in that: The storage medium stores a plurality of instructions, and the instructions are suitable for being loaded by a processor to execute the mask imaging method according to any one of claims 1 to 7.

10. An electronic device, characterized in that: The invention comprises a memory, a processor and a computer program stored in the memory and executable on the processor, wherein the mask imaging method according to any one of claims 1 to 7 is implemented when the processor executes the computer program.

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