Application of PI semiconductor material in pressure sensor and pressure sensor
By using PI semiconductor material as pressure sensitive components in pressure sensors, the problems of poor stability and high production costs in high temperature, high humidity and high acid environments are solved, and a pressure sensor with high accuracy, low cost and strong adaptability are realized.
Patent Information
- Application Number
- CN202510168977.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-02-17
- Publication Date
- 2025-05-23
AI Technical Summary
Traditional pressure sensors have poor stability in high temperature, high humidity and high acid environments, reduced measurement accuracy, and high production costs, and are complex in structure and not suitable for certain special application scenarios.
PI semiconductor material is used as the pressure sensitive element. The PI semiconductor material is composed of a polyimide substrate and a uniformly dispersed conductive substance, with a high glass transition temperature and a good piezoresistive effect.
Long-term stability and high-precision measurement in high temperature, high humidity and high acid environments are achieved, which reduces production costs, and is suitable for various special application scenarios due to its simple structure and small size.