Remote plasma source device and thin film deposition equipment

Abstract

The invention provides a remote plasma source device and thin film deposition equipment, the remote plasma source device comprises a microwave assembly and a resonant cavity, and the microwave assembly is used for conducting microwaves; one end of the resonant cavity is connected with the microwave assembly, the resonant cavity is provided with a resonant cavity, an air inlet and an air outlet, the resonant cavity is located in the resonant cavity, and the resonant cavity is communicated with the microwave assembly, the air inlet and the air outlet; wherein target gas enters the resonant cavity through the gas inlet, microwaves enter the resonant cavity through the microwave assembly and ionize the target gas, and the ionized target gas flows out through the gas outlet. The remote plasma source device is designed by adopting a microwave resonance principle, and microwaves have high frequency, so that the remote plasma source device has a very wide working pressure range, the process suitability of the remote plasma source device is improved, and the remote plasma source device can be applied to different process conditions, especially some middle and high pressure process conditions. The remote plasma source device can efficiently ionize target gas, and the film deposition efficiency is improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor production, and particularly to a remote plasma source device and a thin film deposition apparatus. Background Art

[0002] In the field of semiconductor production, Chemical Vapor Deposition (CVD) is a core process for depositing thin films on the surface of a substrate in semiconductor manufacturing. The CVD equipment generates a solid thin film through the chemical reaction of gaseous precursors under high temperature or plasma assistance.

[0003] A Remote Plasma Source (RPS) device in a Chemical Vapor Deposition (CVD) equipment is mainly used to activate a target gas through plasma while avoiding damage to the substrate caused by high-energy particles. Its core principle is to physically separate the plasma generation area from the deposition area, and only transmit low-energy active particles (such as free radicals) to the substrate surface to participate in the reaction. Currently, the main energy source used in mainstream remote plasma source devices is in the radio frequency band, that is, the working principle of Inductively Coupled Plasma (ICP) is used to achieve the cracking of the target chemical gas. However, the ignition pressure range of this method is relatively low, basically below 10 Torr. Therefore, the process adaptability of this remote plasma source device is poor under some medium and high pressure process conditions. Summary of the Invention

[0004] Embodiments of the present invention provide a remote plasma source device and a thin film deposition apparatus to increase the working pressure range of the remote plasma source device, thereby improving the process adaptability of the remote plasma source device under some medium and high pressure process conditions.

[0005] The present invention provides a remote plasma source device, which includes:

[0006] A microwave component for conducting microwaves;

[0007] A resonant cavity, one end of the resonant cavity is connected to the microwave component. The resonant cavity is provided with a resonant chamber, an air inlet, and an air outlet. The resonant chamber is located inside the resonant cavity and is in communication with the microwave component, the air inlet, and the air outlet;

[0008] Wherein, the target gas enters the resonant chamber through the air inlet, the microwave enters the resonant chamber through the microwave component and ionizes the target gas, and the ionized target gas flows out through the air outlet.

[0009] In the remote plasma source device provided by the present invention, the microwave component includes a waveguide and a coupler. The two ends of the coupler are respectively connected to the waveguide and the resonant cavity, and the coupler communicates with the waveguide and the resonant cavity.

[0010] In the remote plasma source device provided by the present invention, the microwave component further includes a conversion antenna. One end of the conversion antenna is fixedly arranged in the waveguide, and the other end is located in the coupler and extends along the length of the coupler towards the resonant cavity.

[0011] In the remote plasma source device provided by the present invention, the microwave component further includes a short - circuit flange, and the short - circuit flange is adjustably connected to the end of the waveguide close to the coupler.

[0012] In the remote plasma source device provided by the present invention, the remote plasma source device further includes a dielectric wave - transmitting window, and the dielectric wave - transmitting window is fixedly arranged in the resonant cavity and is located at the connection between the resonant cavity and the microwave component.

[0013] In the remote plasma source device provided by the present invention, the resonant cavity is further provided with an air - outlet mesh, and the air - outlet mesh is located between the air - outlet and the resonant cavity for blocking microwave transmission.

[0014] In the remote plasma source device provided by the present invention, the remote plasma source device further includes a nozzle, and the nozzle is connected to the air - inlet to inject a target gas into the resonant cavity.

[0015] In the remote plasma source device provided by the present invention, the resonant cavity is further provided with a water - cooling system, and the water - cooling system is located on the outer wall of the resonant cavity for cooling the resonant cavity.

[0016] In the remote plasma source device provided by the present invention, the inner surface of the resonant cavity is a metal structure; or, the inner surface of the resonant cavity is a metal structure covered with a coating on the outside.

[0017] The present invention also provides a thin - film deposition device, which includes the remote plasma source device described in any one of the above.

[0018] This application sets the remote plasma source device by adopting the principle of microwave resonance. The microwave transmitted by the microwave component ionizes the target gas entering the resonance cavity, so that the ionized target gas flows to the substrate surface through the air outlet and reacts on the substrate surface to form a thin film. The remote plasma source device has a very wide operating pressure range, thereby improving the process adaptability of the remote plasma source device. In different process conditions, especially in some medium and high pressure process conditions, the remote plasma source device can efficiently ionize the target gas and improve the thin film deposition efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly introduced below. Obviously, the drawings in the following description are some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0020] Figure 1 It is a cross-sectional view of the remote plasma source device in the embodiment of the present invention;

[0021] Figures 2a - 2c It is the structure of the remote plasma source device in various angles in the embodiment of the present invention.

[0022] The reference numerals in the drawings are as follows:

[0023] 1. Microwave component; 11. Waveguide; 12. Coupler; 13. Conversion antenna; 14. Short-circuit flange; 2. Resonant cavity body; 21. Resonant cavity; 22. Air inlet; 23. Air outlet; 24. Air outlet hole mesh; 3. Nozzle; 4. Dielectric wave-transmitting window. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0024] It should be noted that, without conflict, the embodiments in this application and the features in the embodiments can be combined with each other. Now, with reference to the drawings, the preferred embodiments of the present invention will be described in detail.

[0025] Refer to Figures 1 to 2cAs shown, it shows an embodiment of the remote plasma source device of the present invention. The remote plasma source device includes a microwave component 1 and a resonant cavity 2. The microwave component 1 is used to conduct microwaves. One end of the resonant cavity 2 is connected to the microwave component 1. The resonant cavity 2 is provided with a resonant cavity 21, an air inlet 22 and an air outlet 23. The resonant cavity 21 is located inside the resonant cavity 2, and the resonant cavity 21 is communicated with the microwave component 1, the air inlet 22 and the air outlet 23. Among them, the target gas enters the resonant cavity 21 through the air inlet 22, the microwave enters the resonant cavity 21 through the microwave component 1 and ionizes the target gas, and the ionized target gas flows out through the air outlet 23.

[0026] Specifically, the remote plasma source device is used in the semiconductor production field. By ionizing the target gas to generate free radicals and ions, and then making the free radicals and ions participate in the reaction on the substrate surface to form a thin film. The remote plasma source device uses the principle of microwave resonance to ionize the target gas, thereby increasing the working pressure range of the remote plasma source device, improving the process adaptation ability of the remote plasma source device, so that the remote plasma source device can efficiently ionize the target gas under the process conditions of different pressure ranges.

[0027] The remote plasma source device includes a microwave component 1 and a resonant cavity 2. The microwave component 1 is used to conduct microwaves to the inside of the resonant cavity 2. The resonant cavity 2 is used to ionize the target gas. One end of the resonant cavity 2 is fixedly connected to one end of the microwave component 1, and the microwave component 1 is communicated with the resonant cavity 2, so that microwaves can be transmitted from the microwave component 1 to the inside of the resonant cavity 2.

[0028] The resonant cavity 2 is provided with a resonant chamber 21, an air inlet 22 and an air outlet 23. The resonant chamber 21 is used to accommodate microwaves and target gas, so that the target gas is ionized by the microwaves in the resonant chamber 21. The resonant chamber 21 is arranged inside the resonant cavity 2, and the resonant chamber 21 communicates with the microwave component 1, the air inlet 22 and the air outlet 23. The air inlet 22 and the air outlet 23 are respectively located on both sides of the resonant chamber 21. The air inlet 22 communicates the outside of the resonant cavity 2 and the resonant chamber 21. The air inlet 22 is used to introduce the target gas. The target gas refers to the gas used for generating a thin film selected according to production requirements. The target gas flows from the air inlet 22 into the resonant chamber 21, is ionized by the microwaves, and then flows out through the air outlet 23 and undergoes a chemical reaction on the surface of the substrate to form a thin film. The air outlet 23 communicates the outside of the resonant cavity 2 and the resonant chamber 21. The air outlet 23 is used to discharge the gas and substances in the resonant chamber 21. Therefore, the microwaves can enter the resonant chamber 21 from the microwave component 1, the target gas can enter the resonant chamber 21 through the air inlet 22, and the ionized target gas is discharged from the resonant chamber 21 through the air outlet 23.

[0029] When starting the remote plasma source device, the target gas flows from the air inlet 22 into the resonant chamber 21, and the microwaves are transmitted from the microwave component 1 to the resonant chamber 21. At the same time, the microwaves ionize the target gas located in the resonant chamber 21. After the target gas is ionized, various free radical groups and ions are formed. The various free radical groups and ions can flow out of the resonant chamber 21 through the air outlet 23, and then undergo a chemical reaction on the surface of the substrate to form a thin film.

[0030] In this application, the remote plasma source device is arranged by adopting the principle of microwave resonance. The microwaves transmitted by the microwave component 1 ionize the target gas entering the resonant chamber 21, so that the ionized target gas flows to the surface of the substrate through the air outlet 23 and undergoes a reaction on the surface of the substrate to form a thin film. The remote plasma source device has a very wide working pressure range, thereby improving the process adaptability of the remote plasma source device. Under different process conditions, especially under some medium and high pressure process conditions, the remote plasma source device can efficiently ionize the target gas and improve the thin film deposition efficiency.

[0031] At the same time, for the remote plasma source device designed by adopting the principle of microwave resonance, the frequency of the microwaves is much higher than the frequency of the radio frequency. Therefore, the remote plasma source device is not sensitive to gases and has good dissociation ability for most gases.

[0032] Moreover, the resonance cavity 21 and the microwave source of the remote plasma source device are completely separated. Solid-state microwaves have very high stability and reliability and can be almost maintenance-free throughout the life cycle of the entire system. The resonance cavity 21 itself is a passive module and a purely mechanical component, which can be used regularly as a consumable, thus significantly increasing the service life of the remote plasma source device.

[0033] More specifically, the remote plasma source device uses a solid-state microwave source, that is, a microwave generator of a semiconductor solid amplifier. For example, the amplifier is LDMOS or gallium nitride. The microwave signal source configured by this microwave generator has a specific bandwidth, and the frequency can be adjusted within the bandwidth. Solid-state microwaves have very high stability and reliability, thereby improving the stability and reliability of the remote plasma source device.

[0034] At the same time, by using a broadband solid-state microwave source, system matching can be quickly completed by frequency sweeping. Through a closed-loop power control strategy, stable control of the effective load power can be achieved, improving process stability to meet the fine requirements of some front-end processes.

[0035] More specifically, the remote plasma source device of the present invention is designed based on the principle of microwave resonance, and microwaves (such as 915 MHz / 2450 MHz) in the ISM (Industrial / Scientific / Medical) band specified by ITU-R (International Telecommunication Union Radiocommunication Sector) are used as the energy source. At the same time, a broadband solid-state microwave source is selected to dissociate the target gas by resonance of the microwaves in the resonance cavity 21.

[0036] More specifically, the remote plasma source device further includes a main system, which is connected to the microwave component 1 and the resonance cavity body 2. The feeding power of the microwave can be set in real time by the controller of the main system or manually set by the microwave generator in the local mode. The target gas is controlled by the mass flowmeter of the main system. The pressure of the resonance cavity 21 is controlled by a proportional valve or a butterfly valve configured by the pre-stage exhaust system of the main system. By adjusting the microwave feeding power, the composition and pressure of the target gas in the resonance cavity 21, the size and shape of the plasma fireball after ignition can be controlled to keep it away from the inner surface of the resonance cavity 21, thereby avoiding plasma bombardment of the inner surface of the resonance cavity 21, which is beneficial to extending the working life of the remote plasma source device and better suppressing the particle level from inside the remote plasma source device.

[0037] In one embodiment, refer to Figures 1 to 2bAs shown, the microwave component 1 includes a waveguide 11 and a coupler 12. Both ends of the coupler 12 are respectively connected to the waveguide 11 and the resonant cavity 2, and the coupler 12 communicates with the waveguide 11 and the resonant cavity 21. Specifically, the microwave component 1 is used to transmit microwaves into the resonant cavity 21. The microwave component 1 includes a waveguide 11 and a coupler 12. The waveguide 11 is one of the basic forms of microwave transmission lines. Different microwave frequency ranges correspond to waveguides 11 of different sizes. The waveguide transmission method is more flexible than the structure of coaxial transmission lines and is conducive to transmitting greater power. The coupler 12 is a transmission space for microwaves. One end of the coupler 12 is connected to the waveguide 11, and the other end is connected to the resonant cavity 2, so that the coupler 12 communicates with the waveguide 11 and the resonant cavity 21. Among them, when the remote plasma source device is started, microwaves enter the coupler 12 through the waveguide 11 and are transmitted into the resonant cavity 21 along the coupler 12, so as to ionize the target gas in the resonant cavity 21 and improve the stability of microwave transmission. In this embodiment, the structures of the waveguide 11, the coupler 12, and the resonant cavity 2 are more stable.

[0038] More specifically, the waveguide 11 in this embodiment is a rectangular waveguide 11, and its fundamental mode TE10 is the simplest fundamental mode. At the same time, one end of the coupler 12 is vertically connected to the end of the waveguide 11, and the resonant cavity 2 is fixedly arranged at the other end of the coupler 12 along the length direction of the coupler 12, so that microwaves can be directly transmitted into the resonant cavity 21 to improve the microwave transmission efficiency.

[0039] In a specific embodiment, refer to Figure 1 、 Figure 2bAs shown, the microwave component 1 further includes a conversion antenna 13. One end of the conversion antenna 13 is fixedly arranged in the waveguide 11, and the other end is located in the coupler 12 and extends along the length of the coupler 12 towards the resonant cavity 21. Specifically, the microwave component 1 further includes a conversion antenna 13, which is used to conduct the microwave in the waveguide 11 into the resonant cavity 21. The conversion antenna 13 is located in the coupler 12 and extends along the length direction of the coupler 12. One end of the conversion antenna 13 protrudes out of one end of the coupler 12 and extends along the height direction of the waveguide 11 to be fixedly connected to the inner wall of the waveguide 11. The other end of the conversion antenna 13 extends along the length direction of the coupler 12 towards the position of the resonant cavity 21, that is, the other end of the conversion antenna 13 is close to the resonant cavity 212, so that the coupler 12 and the conversion antenna 13 together form a coaxial transmission structure. Based on the principle of electromagnetic induction, the conversion antenna 13 introduces the microwave transmitted in the waveguide 11 into the resonant cavity 21 to ensure the transmission direction of the microwave.

[0040] More specifically, the conversion antenna 13 is provided with a cooling part (not shown in the figure) to avoid the occurrence of overheating events. In this embodiment, the cooling part generally adopts a water cooling method, and the cooling water circulates through a water channel arranged inside the structure of the conversion antenna 13 to complete heat exchange.

[0041] In one embodiment, referring to Figure 1 、 Figure 2a As shown, the microwave component 1 further includes a short-circuit flange 14, and the short-circuit flange 14 is adjustably connected to one end of the waveguide 11 close to the coupler 12. Specifically, the short-circuit flange 14 is used to adjust the reflected power of the waveguide 11. The short-circuit flange 14 is arranged close to the coupler 12 and is located inside the waveguide 11. The short-circuit flange 14 is adjustably connected to the waveguide 11, that is, relative to the waveguide 11, the position of the short-circuit flange 14 can be adjusted back and forth, and the short-circuit flange 14 and the inner metal surface of the waveguide 11 form a good electrical connection to ensure that no microwave leakage occurs.

[0042] In a specific embodiment, referring to Figure 1As shown, the remote plasma source device further includes a dielectric wave-transmitting window 4, which is fixedly arranged in the resonant cavity 2 and is located at the connection between the resonant cavity 21 and the microwave component 1. Specifically, the remote plasma source device further includes a dielectric wave-transmitting window 4, which is fixedly arranged in the resonant cavity 2, and the dielectric wave-transmitting window 4 is located between the resonant cavity 21 and the microwave component 1. Therefore, the microwave of the microwave component 1 needs to pass through the dielectric wave-transmitting window 4 to reach the inside of the resonant cavity 21. The dielectric wave-transmitting window 4 is used to efficiently feed microwave into the resonant cavity 21, and at the same time maintain the physical isolation and sealing between the resonant cavity 21 and the microwave component 1 to improve the structural stability of the resonant cavity 2 and the microwave component 1.

[0043] Therefore, the resonant cavity 21 and the microwave component 1 are respectively located on both sides of the dielectric wave-transmitting window 4. One side of the dielectric wave-transmitting window 4 is the microwave component 1 in the atmospheric environment, which is mainly used to efficiently feed microwave energy into the resonant cavity 21, that is, the coupler 12, the conversion antenna 13 and the waveguide 11 are all located on one side of the dielectric wave-transmitting window 4; the other side of the dielectric wave-transmitting window 4 is the resonant space of the resonant cavity 21. After the target gas is ionized by the high-frequency strong electric field in the resonant cavity 21, it is led out through the air outlet 23; therefore, the whole conversion antenna 13 is located on the atmospheric side of the dielectric wave-transmitting window 4, so as to avoid the etching of the conversion antenna 13 by high voltage.

[0044] In a specific embodiment, referring to Figure 1 、 Figure 2c As shown, the resonant cavity 2 is further provided with a gas outlet mesh 24, which is located between the air outlet 23 and the resonant cavity 21 and is used to cut off the microwave transmission. Specifically, the resonant cavity 2 is further provided with a gas outlet mesh 24, which is used to cut off the microwave transmission above a specific frequency. The gas outlet mesh 24 is located between the air outlet 23 and the resonant cavity 21, that is, the gas outlet mesh 24 is arranged at the connection between the air outlet 23 and the resonant cavity 21, and both sides of the gas outlet mesh 24 are the air outlet 23 and the resonant cavity 21 respectively. Therefore, the target gas ionized in the resonant cavity 21 will pass through the gas outlet mesh 24 and then through the air outlet 23 to flow to the surface of the substrate, and finally react on the surface of the substrate to form a film; in order to prevent the microwave from being transmitted out of the resonant cavity 21 through the air outlet 23, the gas outlet mesh 24 is arranged between the air outlet 23 and the resonant cavity 21, and the gas outlet mesh 24 can cut off the microwave transmission above a specific frequency to prevent the microwave from entering the air outlet 23, so as to ensure the structural stability of the ionized target gas and avoid affecting subsequent operations; at the same time, improve the structural stability of the remote plasma source device.

[0045] More specifically, the air outlet mesh 24 includes a plurality of air outlets, and the aperture size of the air outlets needs to meet the requirement of blocking the transmission of microwaves above a specific frequency, and at the same time, it needs to be as large as possible to avoid the rapid recombination of free radicals of some target gases. According to the principle of microwave transmission, when the diameter of a metal circular hole is less than 1 / 4 of the microwave wavelength and the hole has a certain depth (significantly greater than the skin depth of the induced current), the microwave cannot pass through the metal hole and continue to propagate forward. Therefore, in this embodiment, the aperture of the air outlet is less than 1 / 10 of the half wavelength of the microwave to ensure that a large enough metal area of the air outlet mesh 24 participates in the reflection of microwaves.

[0046] In a specific embodiment, referring to Figure 1 , Figure 2a , Figure 2c As shown, the remote plasma source device further includes a nozzle 3, and the nozzle 3 is connected to the air inlet 22 to inject a target gas into the resonance cavity 21. Specifically, the remote plasma source device further includes a nozzle 3, the nozzle 3 is fixedly connected to the air inlet 22, and the nozzle 3 is used to inject a target gas toward the air inlet 22, so as to ensure that the target gas flows into the resonance cavity 21 symmetrically and uniformly along the axis of the air inlet 22, thereby improving the ionization efficiency of microwaves on the target gas and at the same time improving the uniformity of the target gas in the resonance cavity 21.

[0047] In one embodiment, the resonance cavity body 2 is further provided with a water cooling system (not shown in the figure), and the water cooling system is located on the outer wall of the resonance cavity body 2 for cooling the resonance cavity body 2. Specifically, the resonance cavity body 2 is further provided with a water cooling system, and the water cooling system is used to release the heat conducted by the high-temperature gas in the resonance cavity 21 to the surface of the resonance cavity body 2, that is, to cool the resonance cavity body 2.

[0048] More specifically, the water cooling system performs circulation to complete heat exchange, or water pipes are arranged on the outer wall of the resonance cavity body 2, and the resonance cavity body 2 and the water cooling system are bonded together by welding or bonding to form a heat exchange structure.

[0049] In a specific embodiment, the inner surface of the resonance cavity body 2 is a metal structure; or, the inner surface of the resonance cavity body 2 is a metal structure covered with a coating on the outside. Specifically, since the metal surface is impermeable to microwaves and can reflect microwaves, so that microwaves form resonance in the resonance cavity 21, therefore, the inner surface of the resonance cavity body 2 needs to be set as a specific metal surface structure; and the main purpose of the coating is to prevent the generation of pollutants, and the material of the coating needs to be selected according to different working gases.

[0050] More specifically, aluminum is generally selected to fabricate the resonant cavity 2; the coating material is completely related to the composition of the working gas and needs to be handled on a case-by-case basis according to specific requirements.

[0051] This embodiment also provides a thin film deposition apparatus (not shown in the figure), the thin film deposition apparatus includes a remote plasma source device, and the remote plasma source device can adopt any one of the remote plasma source devices provided by the present invention. Since the specific structure and working principle of the remote plasma source device have been described in detail in the previous specification, for the sake of simplicity of the specification, they will not be repeated here.

[0052] In the thin film deposition apparatus of this embodiment, due to the adoption of the remote plasma source device provided by the present invention, the remote plasma source device has high adaptability, and the remote plasma source device can efficiently ionize the target gas, thereby improving the thin film deposition efficiency of the thin film deposition apparatus.

[0053] As described above, the above are only specific embodiments of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present invention can easily think of various equivalent modifications or substitutions, and these modifications or substitutions should be covered within the protection scope of the present invention. Therefore, the protection scope of the present invention should be subject to the protection scope of the claims.

Claims

1. A remote plasma source device, characterized in that: include: Microwave components, used to conduct microwaves; A resonant cavity, one end of which is connected to the microwave component, the resonant cavity is provided with a resonant cavity, an air inlet and an air outlet, the resonant cavity is located inside the resonant cavity, and the resonant cavity is communicated with the microwave component, the air inlet and the air outlet; The target gas enters the resonant cavity through the air inlet, the microwave enters the resonant cavity through the microwave component and ionizes the target gas, and the ionized target gas flows out through the air outlet.

2. The remote plasma source device according to claim 1, characterized in that: The microwave component comprises a waveguide and a coupler, two ends of the coupler are respectively connected to the waveguide and the resonant cavity, and the coupler communicates the waveguide and the resonant cavity.

3. The remote plasma source device according to claim 2, characterized in that: The microwave component further comprises a conversion antenna, one end of which is fixed in the waveguide, and the other end of which is located in the coupler and extends along the length of the coupler toward the direction of the resonant cavity.

4. The remote plasma source device according to claim 2, characterized in that: The microwave assembly further comprises a short-circuit flange which is adjustably connected to an end of the waveguide close to the coupler.

5. The remote plasma source device according to claim 1, characterized in that: The remote plasma source device further comprises a dielectric wave-transmitting window, which is fixedly arranged in the resonant cavity and located at the connection point between the resonant cavity and the microwave component.

6. The remote plasma source device according to claim 1, characterized in that: The resonant cavity is also provided with an air outlet mesh, which is located between the air outlet and the resonant cavity and is used to cut off microwave transmission.

7. The remote plasma source device according to claim 1, characterized in that: The remote plasma source device further comprises a nozzle connected to the gas inlet to spray a target gas into the resonance cavity.

8. The remote plasma source device according to claim 1, characterized in that: The resonant cavity is also provided with a water cooling system, which is located on the outer wall of the resonant cavity and is used to cool the resonant cavity.

9. The remote plasma source device according to claim 1, characterized in that: The inner surface of the resonant cavity is a metal structure; or, the inner surface of the resonant cavity is a metal structure with an outer surface covered with a coating.

10. A thin film deposition device, characterized in that: A remote plasma source device comprising any one of claims 1-9.

Images