Plating apparatus and plating method

Abstract

Correcting the irregularities in the coating thickness at the periphery of the substrate improves the uniformity of the coating thickness across the entire coated surface. The plating module (400) includes: a plating tank (410) configured to contain a plating solution; an anode (430) disposed within the plating tank (410); a substrate support (440) configured to hold a substrate (Wf) with the plating surface (Wf-a) facing downwards; a lifting mechanism (443) configured to lift the substrate support (440); a rotating mechanism (447) configured to rotate the substrate support (440); a shielding member (481) capable of shielding the electric field formed between the anode (430) and the substrate (Wf); and a shielding mechanism (485) configured to switch between a reference position between the anode (430) and the substrate (Wf), a shielding position with an electric field shielding area larger than the reference position, and a retraction position that retracts from the anode (430) and the substrate (Wf).

Description

Technical Field

[0001] This application relates to plating apparatus and plating method. Background Technology

[0002] As an example of a plating apparatus, a cup-type electrolytic plating apparatus is known. The cup-type electrolytic plating apparatus immerses a substrate (e.g., a semiconductor wafer) held by a substrate support with the plating surface facing downwards in a plating solution, and applies a voltage between the substrate and the anode to deposit a conductive film onto the surface of the substrate.

[0003] In cup-type electroplating apparatuses, it is known to use a shielding member to shield the electric field formed between the anode and the substrate. For example, Patent Document 1 discloses an electroplating apparatus in which, when a specific portion of the substrate is rotated to a predetermined rotation angle range, the shielding member is moved between the specific portion of the substrate and the anode to shield the specific portion of the substrate only at a desired time.

[0004] Patent Document 1: Japanese Patent No. 6901646

[0005] However, existing electroplating apparatuses still have room for improvement in correcting the irregularities in the coating thickness at the periphery of the substrate to improve the uniformity of the coating thickness across the entire plated surface.

[0006] That is, the coating thickness at the periphery of the plated surface of the substrate can sometimes be inconsistent due to various factors such as uneven power supply to the contacts on the substrate support, uneven seed layer thickness, and pattern shape. For example, at the periphery of the substrate, the coating thickness may sometimes be a mixture of standard portions, portions thicker than standard portions, and portions thinner than standard portions. In addition, the overall coating thickness at the periphery of the substrate may sometimes be thicker or thinner than that of a standard substrate. Summary of the Invention

[0007] Therefore, one objective of this application is to correct the irregularities in the coating thickness at the periphery of the substrate, thereby improving the uniformity of the coating thickness across the entire coated surface.

[0008] According to one embodiment, a plating apparatus is disclosed, comprising: a plating tank configured to contain a plating solution; an anode disposed within the plating tank; a substrate support configured to hold a substrate with the plating surface facing downwards; a lifting mechanism configured to lift the substrate support; a rotating mechanism configured to rotate the substrate support; a shielding member capable of shielding an electric field formed between the anode and the substrate; and a shielding mechanism configured to switch between a reference position between the anode and the substrate, a shielding position with an electric field shielding area larger than the reference position, and a retraction position retracting from the anode and the substrate. Attached Figure Description

[0009] Figure 1 This is a perspective view showing the overall structure of the plating apparatus of this embodiment.

[0010] Figure 2 This is a top view showing the overall structure of the plating apparatus of this embodiment.

[0011] Figure 3 This is a longitudinal sectional view that schematically shows the structure of a plating module in one embodiment, indicating the state in which the shielding member has been moved to a reference position.

[0012] Figure 4 This is a longitudinal sectional view that schematically shows the structure of a plating module in one embodiment, showing the state in which the shielding member has moved to the shielding position.

[0013] Figure 5 This is a longitudinal sectional view that schematically shows the structure of a plating module in one embodiment, showing the state in which the shielding member has moved to the retracted position.

[0014] Figure 6 It is a top view that schematically shows the state of the shielding member being positioned in the retreat position, the reference position, and the shielding position.

[0015] Figure 7 This is a top view schematically illustrating an example of switching the configuration position of the shielding member according to the distribution of the coating thickness at the periphery of the substrate.

[0016] Figure 8 This is a flowchart of a plating method using a plating module according to one embodiment.

[0017] Figure 9 This is a top view that schematically illustrates an example of switching the configuration position of the shielding member according to the type of substrate.

[0018] Figure 10 This is a flowchart of a plating method using a plating module according to one embodiment.

[0019] Figure 11 This is a top view showing the multiple regions included in a resistor element of one embodiment.

[0020] Figure 12 This diagram schematically illustrates an example of the coating thickness when the placement of the shielding member is adjusted according to the distribution of the coating thickness at the periphery of the substrate.

[0021] Figure 13 This is a top view showing the multiple regions included in a resistor element of one embodiment.

[0022] Figure 14 This is a top view schematically illustrating an example of switching the configuration position of the shielding member according to the distribution of the coating thickness at the periphery of the substrate.

[0023] Figure 15 This is a graph showing the relationship between the timing of shielding the first part Wf-e of the substrate and the rotation speed of the substrate support.

[0024] Figure 16 This is a top view schematically illustrating an example of switching the configuration position of the shielding member according to the distribution of the coating thickness at the periphery of the substrate.

[0025] Figure 17 This is a top view schematically illustrating an example of switching the configuration position of the shielding member according to the distribution of the coating thickness at the periphery of the substrate.

[0026] Figure 18 This is a top view schematically illustrating an example of switching the configuration position of the shielding member according to the distribution of the coating thickness at the periphery of the substrate.

[0027] Figure 19 This is a top view schematically illustrating an example of switching the configuration position of the shielding member according to the distribution of the coating thickness at the periphery of the substrate.

[0028] Figure 20 This is a top view schematically illustrating an example of switching the configuration position of the shielding member according to the distribution of the coating thickness at the periphery of the substrate. Detailed Implementation

[0029] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In the drawings described below, the same or equivalent constituent elements are labeled with the same reference numerals and repeated descriptions are omitted.

[0030] <Overall Structure of the Plating Equipment>

[0031] Figure 1 This is a perspective view showing the overall structure of the plating apparatus of this embodiment. Figure 2 This is a top view showing the overall structure of the plating apparatus of this embodiment. (e.g.) Figure 1 , 2 As shown, the plating apparatus 1000 includes a loading port 100, a transfer robot 110, an alignment device 120, a pre-wetting module 200, a pre-immersion module 300, a plating module 400, a cleaning module 500, a spin dryer 600, a transfer device 700, and a control module 800.

[0032] Loading ports 100 are modules used to move substrates stored in foup containers (not shown) into the plating apparatus 1000, or to move substrates from the plating apparatus 1000 into the foup containers. In this embodiment, four loading ports 100 are arranged horizontally, but the number and arrangement of loading ports 100 are arbitrary. A transfer robot 110 is a robot for transferring substrates, configured to exchange substrates between loading ports 100, alignment device 120, pre-wetting module 200, and spin dryer 600. When exchanging substrates between the transfer robot 110 and the transfer device 700, the transfer robot 110 and the transfer device 700 can exchange substrates via a temporary platform (not shown).

[0033] Aligner 120 is a module used to align the position of the orientation plane or notch of the substrate with a predetermined direction. In this embodiment, two aligners 120 are arranged horizontally, but the number and arrangement of aligners 120 are arbitrary. Pre-wetting module 200 uses a treatment liquid such as pure water or degassed water to wet the substrate surface to be plated before plating, thereby replacing the air inside the pattern formed on the substrate surface with the treatment liquid. Pre-wetting module 200 is configured to perform a pre-wetting process, which replaces the treatment liquid inside the pattern with plating liquid during plating, thereby facilitating the supply of plating liquid to the inside of the pattern. In this embodiment, two pre-wetting modules 200 are arranged vertically, but the number and arrangement of pre-wetting modules 200 are arbitrary.

[0034] The pre-impregnation module 300 is configured to perform a pre-impregnation process, which, for example, involves using a treatment solution such as sulfuric acid or hydrochloric acid to etch away oxide films with high resistance present on the seed layer surface of the substrate to be plated before plating, thereby cleaning or activating the surface of the substrate. In this embodiment, two pre-impregnation modules 300 are arranged vertically, but the number and arrangement of the pre-impregnation modules 300 are arbitrary. The plating module 400 performs the plating process on the substrate. In this embodiment, there are two sets of plating modules 400, with three units arranged vertically and four units arranged horizontally, totaling 12 units, for a total of 24 plating modules 400, but the number and arrangement of the plating modules 400 are arbitrary.

[0035] The cleaning module 500 is configured to clean the substrate to remove residual plating solution or the like after plating. In this embodiment, two cleaning modules 500 are arranged vertically, but the number and arrangement of the cleaning modules 500 are arbitrary. The spin dryer 600 is a module used to dry the cleaned substrate by high-speed rotation. In this embodiment, two spin dryers are arranged vertically, but the number and arrangement of the spin dryers are arbitrary. The conveying device 700 is a device for conveying substrates between multiple modules within the plating apparatus 1000. The control module 800 is configured to control multiple modules of the plating apparatus 1000, and can be configured, for example, by a conventional computer or a dedicated computer equipped with an input / output interface for the operator.

[0036] An example of a series of plating processes performed on the plating apparatus 1000 will be described. First, a substrate stored in a cassette is loaded into the loading port 100. Next, a transfer robot 110 removes the substrate from the cassette in the loading port 100 and transfers it to an alignment device 120. The alignment device 120 aligns the position of the substrate's orientation plane or notch with a predetermined direction. The transfer robot 110 then transfers the substrate, aligned by the alignment device 120, to the pre-wetting module 200.

[0037] The pre-wetting module 200 performs a pre-wetting treatment on the substrate. The conveying device 700 conveys the pre-wetted substrate to the pre-impregnation module 300. The pre-impregnation module 300 performs a pre-impregnation treatment on the substrate. The conveying device 700 conveys the pre-impregnation treated substrate to the plating module 400. The plating module 400 performs a plating treatment on the substrate.

[0038] The transfer device 700 transfers the plated substrate to the cleaning module 500. The cleaning module 500 cleans the substrate. The transfer device 700 then transfers the cleaned substrate to the spin dryer 600. The spin dryer 600 dries the substrate. The transfer robot 110 receives the substrate from the spin dryer 600 and transfers the dried substrate to the cassette in the loading port 100. Finally, the cassette containing the substrate is removed from the loading port 100.

[0039] <Structure of the plating module>

[0040] Next, the structure of the plating module 400 will be described. Since the 24 plating modules 400 in this embodiment have the same structure, only one plating module 400 will be described. Figure 3 This is a longitudinal sectional view that schematically shows the structure of a plating module in one embodiment, indicating the state in which the shielding member has been moved to a reference position. Figure 4 This is a longitudinal sectional view that schematically shows the structure of a plating module in one embodiment, showing the state in which the shielding member has moved to the shielding position. Figure 5 This is a longitudinal sectional view that schematically shows the structure of a plating module in one embodiment, showing the state in which the shielding member has moved to the retracted position.

[0041] like Figures 3-5 As shown, the plating module 400 includes a plating tank 410 for containing the plating solution. The plating module 400 includes a diaphragm 420 that separates the interior of the plating tank 410 vertically. The interior of the plating tank 410 is divided by the diaphragm 420 into a cathode region 422 and an anode region 424.

[0042] Plating solution is filled into the cathode region 422 and the anode region 424, respectively. The plating module 400 includes a nozzle 426 opening toward the cathode region 422 and a supply source 428 for supplying plating solution to the cathode region 422 via the nozzle 426. Similarly, for the anode region 424, the plating module 400 includes a mechanism for supplying plating solution to the anode region 424, but this is not shown in the figure. An anode 430 is provided on the bottom surface of the plating tank 410 in the anode region 424. A resistor 450 is disposed in the cathode region 422 opposite to the diaphragm 420, and the resistor 450 is directly or indirectly mounted in the plating tank 410. The resistor 450 is a component for achieving uniformity of the plating process in the plating surface Wf-a of the substrate Wf, and is composed of a plate-shaped component with multiple holes.

[0043] Additionally, the plating module 400 includes a substrate support 440 for holding the substrate Wf with the plating surface Wf-a facing downwards. The substrate support 440 includes a power supply contact (power supply contact element) for supplying power to the substrate Wf from a power source (not shown). The substrate support 440 includes a sealing ring support 442 for supporting the outer edge of the plating surface Wf-a of the substrate Wf, and a frame 446 for holding the sealing ring support 442 to a substrate support body (not shown). Furthermore, the substrate support 440 includes a back plate 444 for pressing the back side of the plating surface Wf-a of the substrate Wf, and a shaft 448 mounted on the back side of the substrate pressing surface of the back plate 444.

[0044] The plating module 400 includes a lifting mechanism 443 for raising and lowering the substrate support 440, and a rotation mechanism 447 for rotating the substrate support 440 such that the substrate Wf rotates about an imaginary axis (an imaginary rotation axis extending vertically at the center of the plating surface Wf-a) of the axis 448. The lifting mechanism 443 and the rotation mechanism 447 can be implemented, for example, by a known mechanism such as a motor. The plating module 400 is configured to perform plating processing on the plating surface Wf-a of the substrate Wf by immersing the substrate Wf in the plating solution of the cathode region 422 using the lifting mechanism 443 and applying a voltage between the anode 430 and the substrate Wf.

[0045] The plating module 400 includes a film thickness sensor 490 configured to measure the plating film thickness at the periphery of the substrate Wf. In this embodiment, the film thickness sensor 490 is mounted on the resistor 450 opposite to the periphery of the substrate Wf. The film thickness sensor 490 is configured to measure the plating film thickness at the periphery of the opposing substrate Wf using any method such as optics, electric field, magnetic field, or potential during the plating process. Since the substrate rotates during the plating process, the film thickness sensor 490 can measure the circumferential distribution of the plating film thickness at the periphery of the substrate.

[0046] The plating module 400 includes a shielding member 481 for shielding the electric field formed between the anode 430 and the substrate Wf when disposed between the anode 430 and the substrate Wf. The shielding member 481 may, for example, be a plate-shaped shielding plate. Furthermore, the plating module 400 includes a shielding mechanism 485 for moving the shielding member 481. The shielding mechanism 485 is configured to switch the position of the shielding member 481. Specific examples of the shielding mechanism 485 will be described below.

[0047] Figure 6 It is a top view that schematically shows the state of the shielding member being positioned in the retreat position, the reference position, and the shielding position. Figure 6 (A) indicates the state in which the shielding member 481 is positioned at the reference position. Figure 6 (B) indicates that the shielding member 481 is positioned in the shielding position. Figure 6 (C) indicates that the shielding member 481 is positioned in the retreat position.

[0048] like Figures 3-5 and Figure 6 As shown, the shielding mechanism 485 is configured to switch between a reference position between the anode 430 and the substrate Wf, a shielding position with an electric field shielding area larger than the reference position, and a retraction position where the shielding member 481 is retracted from the anode 430 and the substrate Wf. Figure 6 As shown in (A) to (C), the reference position is the position where the shielding member 481 and the substrate Wf overlap when viewed from above; the shielding position is the position where the shielding member 481 and the substrate Wf overlap more than the reference position when viewed from above; and the retreat position is the position where the shielding member 481 and the substrate Wf do not overlap when viewed from above. Thus, by switching the shielding member 481 between these three positions—reference position, shielding position, and retreat position—the electric field shielding area changes, thereby changing the coating thickness at the periphery of the substrate Wf.

[0049] For example, the shielding mechanism 485 may also be configured to switch the shielding member 481 between a reference position, a shielding position, and a retracted position based on the distribution of the coating thickness at the periphery of the substrate Wf as measured by the film thickness sensor 490. Furthermore, in this embodiment, an example is shown where the shielding mechanism 485 switches the shielding member 481 between three positions, but it is not limited to this; the shielding mechanism 485 may also switch the shielding member 481 between four or more positions. Additionally, in this specification, when the shielding mechanism 485 positions the shielding member 481 at a predetermined position, it does not simply mean that the shielding member 481 passes through the predetermined position during movement, but rather that the shielding member 481 stops at the predetermined position.

[0050] Figure 7 This is a top view schematically illustrating an example of switching the configuration position of the shielding member based on the distribution of the coating thickness at the periphery of the substrate. Figure 7 In the diagram, (A) to (D) indicate the arrangement of the shielding members as the substrate Wf rotates. For example... Figure 7 As shown in (A) to (D), if the substrate Wf rotates, the periphery of the substrate Wf approaches the shielding member 481 in sequence. Figure 7 In the example, a first plating film thickness (reference film thickness), a second plating film thickness thicker than the first plating film thickness, and a third plating film thickness thinner than the first plating film thickness are formed at the periphery of the substrate Wf, resulting in a disorder of plating film thickness at the periphery of the substrate Wf. This disorder of plating film thickness may be caused by various factors such as uneven power supply to the contacts provided on the substrate support 440, uneven seed layer thickness in the plating surface of the substrate Wf, and the pattern shape in the plating surface of the substrate Wf.

[0051] like Figure 7 As shown in (A), the shielding mechanism 485 is configured to place the shielding member 481 at a reference position for the first peripheral portion Wf-b of the substrate Wf to which the first coating thickness is formed. Specifically, if the first peripheral portion Wf-b of the substrate Wf is close to the shielding member 481, the shielding mechanism 485 places the shielding member 481 at the reference position. Furthermore, as... Figure 7 As shown in (B), the shielding mechanism 485 is configured to position the shielding member 481 in a shielding position over the second peripheral portion Wf-c of the substrate Wf to which the second coating thickness is formed. Specifically, if the substrate Wf is rotated and the second peripheral portion Wf-c of the substrate Wf approaches the shielding member 481, the shielding mechanism 485 positions the shielding member 481 in the shielding position. Furthermore, as... Figure 7 As shown in (C), if the substrate Wf is further rotated and the first peripheral portion Wf-b is brought close to the shielding member 481 again, the shielding mechanism 485 will position the shielding member 481 at the reference position. Additionally, as... Figure 7As shown in (D), the shielding mechanism 485 is configured to position the shielding member 481 in a retracted position relative to the third peripheral portion Wf-d of the substrate Wf to which the third coating thickness is formed. Specifically, if the substrate Wf is further rotated and the third peripheral portion Wf-d of the substrate Wf approaches the shielding member 481, the shielding mechanism 485 positions the shielding member 481 in the retracted position. Furthermore, an example is shown where, Figure 7 In (A) and (C), the substrate Wf, held on the substrate support 440, is rotated unidirectionally at a constant speed. Figure 7 In (B) and (D), the substrate Wf held on the substrate support 440 is rotated unidirectionally at a constant speed, but is not limited to this.

[0052] According to this embodiment, by disposing the shielding member 481 in a shielding position for the second peripheral portion Wf-c, the formation of a plating film thickness on the second peripheral portion Wf-c can be suppressed, thus making the plating film thickness of the second peripheral portion Wf-c close to the reference film thickness. On the other hand, by disposing the shielding member 481 in a retracted position for the third peripheral portion Wf-d, the formation of a plating film thickness on the third peripheral portion Wf-d can be promoted, thus making the plating film thickness of the third peripheral portion Wf-d close to the reference film thickness. As a result, according to this embodiment, the irregularity of the plating film thickness at the periphery of the substrate can be corrected to improve the uniformity of the plating film thickness across the entire plated surface.

[0053] Furthermore, in this embodiment, an example is shown where the placement position of the shielding member 481 is determined based on the distribution of the coating thickness at the periphery of the substrate Wf as measured by the film thickness sensor 490, but this is not a limitation. That is, the coating module 400 may not include the film thickness sensor 490. In this case, the shielding mechanism 485 can predict the formation of the same coating thickness distribution for substrates Wf of the same type based on the coating thickness distribution of the substrate Wf obtained in advance through experiments, etc. Therefore, the shielding mechanism 485 may also be configured to switch the shielding member 481 between a reference position, a shielding position, and a retracted position based on the distribution of the coating thickness formed at the periphery of the substrate Wf.

[0054] Next, the plating method using the plating module 400 of this embodiment will be described. Figure 8 This is a flowchart of a plating method using a plating module according to one embodiment.

[0055] The plating method involves placing a substrate Wf on a substrate support 440 (step 102). Step 102 can be performed, for example, by placing the substrate Wf with the plating surface Wf-a facing downwards on a sealing ring support 442 using a robot (not shown), and pressing the back side of the substrate Wf with a back plate 444.

[0056] Next, the plating method lowers the substrate support 440 into the plating tank 410 via the lifting mechanism 443 (lowering step 104). Next, the plating method rotates the substrate support 440 via the rotating mechanism 447 (rotation step 106).

[0057] Next, the plating method applies a voltage between the anode 430 disposed in the plating tank 410 and the substrate Wf held by the substrate support 440 to perform plating treatment on the plating surface Wf-a (plating step 108). In addition, the order of steps 106 and 108 can be reversed, or they can be performed simultaneously.

[0058] Next, the plating method uses a film thickness sensor 490 to measure the plating film thickness at the periphery of the substrate Wf (measurement step 110). Then, based on the distribution of the plating film thickness at the periphery of the substrate Wf measured by measurement step 110, the plating method configures the shielding member 481 to switch between a reference position, a shielding position, and a retracted position (shielding step 112).

[0059] Specifically, the masking step 112 includes step 112-a, which determines the type of peripheral portion of the substrate Wf that is close to the masking member 481. The masking step 112 includes a first placement step 112-b, which, when determined that the first peripheral portion Wf-b of the substrate Wf is close to the masking member 481, places the masking member 481 in a reference position for the first peripheral portion Wf-b. The masking step 112 includes a second placement step 112-c, which, when determined that the second peripheral portion Wf-c of the substrate Wf is close to the masking member 481, places the masking member 481 in a masking position for the second peripheral portion Wf-c. The masking step 112 includes a third placement step 112-d, which, when determined that the third peripheral portion Wf-d of the substrate Wf is close to the masking member 481, places the masking member 481 in a retracted position for the third peripheral portion Wf-d. Therefore, it is possible to correct the irregularities in the coating thickness at the periphery of the substrate to improve the uniformity of the coating thickness across the entire coated surface.

[0060] Next, the plating method determines whether the plating process should be terminated (step 114). If, for example, the plating method determines that the plating process should not be terminated before a predetermined time has elapsed since the start of the plating process (step 114: No), it returns to step 110 to continue the process.

[0061] On the other hand, if the plating method determines that the plating process should end after a predetermined time has elapsed since the start of the plating process (step 114: Yes), the plating process is stopped by stopping the voltage applied between the anode 430 and the substrate Wf (step 116). Next, the plating method stops the rotation of the substrate support 440 by the rotation mechanism 447 (step 118). Next, the plating method raises the substrate support 440 by the lifting mechanism 443 (step 120). Thus, the series of plating processes ends.

[0062] Next, other embodiments of the plating module 400 will be described. In the above embodiment, the shielding mechanism 485 is configured to switch the shielding member 481 between a reference position, a shielding position, and a retracted position according to the distribution of the plating film thickness at the periphery of the substrate Wf, but it is not limited to this. The shielding mechanism 485 may also be configured to switch the shielding member 481 between a reference position, a shielding position, and a retracted position according to the type of substrate Wf held by the substrate support 440. This point will be explained below.

[0063] Figure 9 This is a top view schematically illustrating an example of switching the configuration position of the shielding member according to the type of substrate. Figure 9 In the figure (A), it represents the thickness distribution of each coating film when the shielding member 481 is positioned at the reference position and coated for three different substrates. Figure 9 (B) indicates the state in which the shielding member 481 is positioned at the reference position, the shielding position, and the retraction position for the three types of substrates. Figure 9 (C) in the text indicates that... Figure 9 The shielding member 481 was configured as shown in (B) to result in the thickness distribution of the coating film formed on the substrate.

[0064] like Figure 9 As shown in (A), various factors such as uneven seed layer thickness and pattern shape on the plated surface of substrate Wf can cause irregularities in the plated film thickness at the periphery of the substrate. For example, as... Figure 9 As shown in the upper layer of (A), the plating process was performed with the shielding member 481 positioned at a reference position, resulting in a uniform plating film thickness distribution across the entire substrate. In this case, the shielding mechanism 485 is designed for the same type of substrate, such as... Figure 9 As shown in the upper layer of (B) in the diagram, the shielding member 481 is positioned at the reference position. The result is as follows: Figure 9 As shown in the upper layer of (C), the entire coated surface achieves uniform coating thickness.

[0065] On the other hand, for example, such as Figure 9As shown in the middle layer of (A), the plating process was performed with the shielding member 481 positioned at a reference position. As a result, the plating film thickness at the periphery of the substrate is thicker than that at the center. In this case, the shielding mechanism 485 is designed for the same type of substrate, such as... Figure 9 As shown in the middle layer of (B), the shielding member 481 is positioned at the shielding location. As a result, it is possible to suppress the formation of a thick coating film on the periphery of the substrate Wf, thus... Figure 9 As shown in the middle layer (C) in the diagram, it can improve the uniformity of the coating thickness across the entire coated surface.

[0066] Additionally, for example, such as Figure 9 As shown in the lower layer of (A), the plating process was performed with the shielding member 481 positioned at a reference position. As a result, the plating film thickness at the periphery of the substrate is thinner than that at the center. In this case, the shielding mechanism 485 is designed for the same type of substrate, such as... Figure 9 As shown in the lower layer of (B), the shielding member 481 is positioned in a retracted position. As a result, it is possible to promote the formation of a thicker coating film on the periphery of the substrate Wf, thus... Figure 9 As shown in the lower layer of (C), the uniformity of the coating thickness across the entire plated surface can be improved. Based on the above, according to this embodiment, the irregularity of the coating thickness at the periphery of the substrate can be corrected to improve the uniformity of the coating thickness across the entire plated surface.

[0067] Next, the plating method using the plating module 400 of this embodiment will be described. Figure 10 This is a flowchart of a plating method using a plating module according to one embodiment.

[0068] The plating method determines the type of substrate held by the substrate holder 440 (determination step 201). Determination step 201 can determine the type of substrate, for example, based on the distribution of plating film thickness of the same type of substrate Wf obtained in advance through experiments. Next, the plating method places the substrate Wf on the substrate holder 440 (step 202). Step 202 can be performed, for example, by placing the substrate Wf with the plating surface Wf-a facing downwards on the sealing ring holder 442 using a robot (not shown), and pressing the back side of the substrate Wf with the back plate 444.

[0069] Next, the plating method lowers the substrate support 440 into the plating tank 410 via the lifting mechanism 443 (lowering step 204). Next, the plating method rotates the substrate support 440 via the rotating mechanism 447 (rotation step 206).

[0070] Next, the plating method applies a voltage between the anode 430 disposed in the plating tank 410 and the substrate Wf held by the substrate support 440 to perform plating treatment on the plating surface Wf-a (plating step 208).

[0071] Next, the plating method configures the shielding member 481 to switch between a reference position, a shielding position, and a retraction position based on the type of substrate determined in determination step 201 (shielding step 210). Specifically, the shielding step uses... Figure 9 As explained in (A) and (B), depending on whether the thickness of the plating film formed at the periphery of the substrate is the same as, thicker than, or thinner than that at the center, the shielding member 481 is configured to switch to a reference position, a shielding position, or a retracted position. Thus, as... Figure 9 As shown in (C), the irregularities in the coating thickness at the periphery of the substrate can be corrected to improve the uniformity of the coating thickness across the entire coated surface. Furthermore, the order of steps 206, 208, and 210 can be interchanged, or they can be performed simultaneously.

[0072] Next, the plating method determines whether the plating process should be terminated (step 212). For example, if the plating method determines that the plating process should not be terminated before a predetermined time has elapsed since the start of the plating process (step 212: No), it returns to step 212 to continue the process.

[0073] On the other hand, if the plating method determines that the plating process should end after a predetermined time has elapsed since the start of the plating process (step 212: Yes), the plating process is stopped by stopping the voltage applied between the anode 430 and the substrate Wf (step 214). Next, the plating method stops the rotation of the substrate support 440 by the rotation mechanism 447 (step 216). Next, the plating method raises the substrate support 440 by the lifting mechanism 443 (step 218). Thus, the series of plating processes ends.

[0074] Next, other aspects of the plating apparatus 1000 of this embodiment will be described. In the above embodiment, an example was shown in which the resistive element 450 included in the plating apparatus 1000 has a plurality of holes formed at equal intervals along the circumference of the circular plate member, but this is not a limitation. Hereinafter, this point will be explained.

[0075] Figure 11 This is a top view showing the multiple regions included in a resistive element according to one embodiment. The resistive element 450 is constructed by forming a plurality of holes 452 in a circular plate member 451. Furthermore, in Figure 11The diagram only shows a portion of the plurality of holes 452 formed in the circular plate component 451, but in reality, the holes 452 are formed entirely within the dashed line 455. The dashed line 455 represents the plated surface of the substrate. The area of ​​the resistor through which metal ions pass (the ion-permeable area) is set to be approximately the same as or slightly smaller than the plated surface of the substrate. The so-called shielding area of ​​the resistor refers to the area other than the opening 454 (S5 area) described later. With this setting, the resistor 450 can function appropriately on the plated surface of the substrate Wf to finely adjust the flow of the plating solution and the plating distribution of the metal on the substrate. A plurality of holes 452 are formed in the circular plate component 451, but there are portions where the holes 452 are formed non-uniformly along the circumference of the circular plate component 451. More specifically, as shown... Figure 11 As shown, when the shielding member 481 is positioned in the shielding position, the resistor 450 has a dynamic shielding region DA where the resistor 450 and the shielding member 481 overlap. Within the dynamic shielding region DA, the resistor 450 includes a first region S1 with a first shielding rate. The first shielding rate refers to the proportion of metal ion transmission blocked by the resistor 450 in region S1, and is expressed as: First shielding rate = 1 - Total area of ​​holes in region S1 / Area of ​​region S1. The same applies to the shielding rates of other regions described later. Furthermore, each total area is calculated by using holes to adjacent regions as boundaries. The first region S1 has an area less than 0.35% of the total area of ​​the resistor 450 opposite the substrate held by the substrate support 440.

[0076] Furthermore, the resistor 450 includes a second region S2 within the dynamic shading region DA. This second region S2 is disposed inside the first region S1 and has a second shading rate greater than the first shading rate. Additionally, the resistor 450 includes a third region S3 within the dynamic shading region DA. This third region S3 is disposed between the first region S1 and the second region S2 and has a third shading rate greater than the first shading rate and less than the second shading rate. By arranging the first region S1, the second region S2, and the third region S3 within the dynamic shading region DA, the shading rate dynamically changes within the dynamic shading region DA. The third region S3 extends circumferentially beyond the dynamic shading region DA and uniformly has a third shading rate within the extended region. In this embodiment, the third region S3 extends throughout the entire circumference of the resistor 450 at a predetermined radius position (column 43) and uniformly has a third shading rate throughout the entire circumference. Furthermore, since the first region S1 is a region with a local shading rate relative to the entire circumference at the periphery of the shielding region of the resistor 450, the first region S1 is referred to as the "partially shielding region" in this specification.

[0077] Furthermore, the resistor 450 further includes a fourth region S4, which is disposed inside the second region S2 and in other circumferential portions of the second region S2, and has a fourth shading rate that is smaller than the second shading rate. Additionally, the resistor 450 further includes a fifth region S5, which is disposed in other circumferential portions of the first region S1 (specifically, portions offset by 90 degrees from the first region S1), and has an opening 454 larger than the hole 452. The shading rate of the fifth region S5 is 0. The shading regions of the resistor refer to specific regions (first region, second region, third region, fourth region, and sixth region), which are characterized by different shading rates when the substrate is located in different orientations. Furthermore, the resistor 450 further includes a sixth region S6, which is disposed in other circumferential portions of the first region S1 and the fifth region S5, and has a sixth shading rate that is larger than the first shading rate.

[0078] exist Figure 11 In one embodiment of the example shown, region S4 is configured along the entire circumference from the center (column 0) of the circular plate component to column 40, and a portion of columns 41 and 42, with a fourth occlusion rate of 72%. Region S2 is configured in a portion of columns 41 and 42, with a second occlusion rate of 84%. Region S3 is configured in column 43, with a third occlusion rate of 66%. Region S1 is configured in a portion of columns 44 and 45, with a first occlusion rate of 48%. Region S6 is configured in a portion of column 44, with a sixth occlusion rate of 86%.

[0079] exist Figure 11 In other embodiments of the example shown, region S4 is configured along the entire circumference from the center (column 0) of the circular plate component to column 40 and a portion of column 41, with a fourth occlusion rate of 72%. Additionally, region S2 is configured in a portion of column 41, with a second occlusion rate of 86%. Furthermore, region S3 is configured in columns 42 and 43, with a third occlusion rate of 72% in column 42 and 66% in column 43. Additionally, region S1 is configured in a portion of columns 44 and 45, with a first occlusion rate of 48%. Region S6 is configured in a portion of column 44, with a sixth occlusion rate of 86%.

[0080] Figure 12 This diagram schematically illustrates an example of how the coating thickness is adjusted when the placement of the shielding member is adjusted according to the distribution of the coating thickness at the periphery of the substrate. (Example) Figure 12 As shown in the upper layer, for the portion of the substrate with a thicker coating at its periphery, the shielding mechanism 485 positions the shielding member 481 in a shielding position. This suppresses the formation of a thicker coating in that portion, thus allowing the coating thickness in that portion to approach the reference thickness (normal thickness).

[0081] In addition, such as Figure 12 As shown in the middle layer, for the portion of the substrate with a normal film thickness at its periphery, the masking mechanism 485 positions the masking member 481 at a reference position. This ensures that the film thickness in this portion is maintained at a normal thickness. Furthermore, as... Figure 12 As shown in the lower layer, for the portion of the substrate with a thinner coating thickness at the periphery, the shielding mechanism 485 positions the shielding member 481 in a retracted position. This promotes the formation of a thicker coating in that portion, thus enabling the coating thickness in that portion to approach the reference film thickness (normal film thickness).

[0082] According to this embodiment, the third region S3 of the resistor 450 extends circumferentially beyond the dynamic shielding region DA, and has a uniform third shielding rate in the extended region. Therefore, the resistor 450 of this embodiment has advantages over resistors of the prior art. That is, for areas with normal film thickness, the shielding member 481 is disposed at a reference position where the 42nd column of the resistor 450 is exposed for plating processing. In prior art resistors, because the shielding rate of the 41st to 43rd columns is higher than that of other circumferential directions, the film thickness tends to be thinner. On the other hand, since the 43rd column (or the 42nd and 43rd columns) of the resistor 450 of this embodiment has the same shielding rate as other circumferential directions and the holes are arranged uniformly, the influence of the current density distribution of the 41st column and the 42nd column (or the 41st column) with different shielding rates in other circumferential directions is mitigated, and the film thickness uniformity or coplanarity is less affected for areas with normal film thickness. As a result, according to this embodiment, when the shielding member 481 is positioned at the reference position, the coating thickness at the periphery of the substrate can be maintained at a normal thickness.

[0083] exist Figure 11 In one embodiment of the example shown, region S4 is positioned from the center (column 0) of the circular plate component to column 42, with a fourth occlusion rate of 72%. Region S3 is positioned in column 43, with a third occlusion rate of 66%. Region S5 is positioned in a portion of columns 44 and 45. Region S5 has an occlusion rate of 0% because it has an opening 454 larger than the hole. Region S6 is positioned in a portion of column 44, with a sixth occlusion rate of 86%.

[0084] Furthermore, in the above embodiment, the third region S3 is shown, for example as follows: Figure 11 Examples of this type of extension covering the entire circumference of the circular plate component 451 are shown, but it is not limited to this. Figure 13 This is a top view showing the multiple regions included in a resistor element of one embodiment.

[0085] Similar to the embodiment described above, the resistor 450 includes, within the dynamic shading region DA, a first region S1 having a first shading rate; and a second region S2 disposed on the inner side away from the first region S1, having a second shading rate greater than the first shading rate. Furthermore, the resistor 450 includes a third region S3 within the dynamic shading region DA, disposed between the first region S1 and the second region S2, having a third shading rate greater than the first shading rate and less than the second shading rate. The third region S3 extends circumferentially beyond the dynamic shading region DA, and uniformly possesses the third shading rate within the extended region.

[0086] exist Figure 13 In the example shown, the third region S3 does not extend throughout the entire circumference of the circular plate member 451. That is, in this embodiment, the fifth region S5 is disposed not only in other circumferential portions of the first region S1, but also in other circumferential portions of the third region S3. In other words, the fifth region S5 extends not only to the 44th and 45th columns of the resistor 450, but also to the 43rd column. Thus, the fifth region S5 is present in a portion of the 43rd column of the resistor 450, but in most of the 43rd column, the third region S3 extends circumferentially along the resistor 450.

[0087] Additionally, the resistor 450 includes: a fourth region S4 disposed inside the second region S2 and in other circumferential portions of the second region S2, having a fourth shading rate that is smaller than the second shading rate and the same as the third shading rate; and a sixth region S6 disposed in other circumferential portions of the first region S1 and the fifth region S5, having a sixth shading rate that is larger than the first shading rate. Figure 13 In the example shown, region S4 is configured along the entire circumference from the center (column 0) of the circular plate component to column 40, and a portion of columns 41 and 42, resulting in a fourth occlusion rate of 72%. Region S2 is configured in a portion of columns 41 and 42, resulting in a second occlusion rate of 84%. Region S3 is configured in column 43, resulting in a third occlusion rate of 72%, differing from the previous embodiment at the same point as the fourth occlusion rate. Region S1 is configured in a portion of columns 44 and 45, resulting in a first occlusion rate of 48%. Region S6 is configured in a portion of column 44, resulting in a sixth occlusion rate of 86%.

[0088] According to this embodiment, the third region S3, which has a uniform shielding rate, extends circumferentially along the resistor 450 in most of the 43rd column. Therefore, the resistor 450 of this embodiment has advantages over resistors of the prior art. That is, for areas with normal film thickness, the shielding member 481 is disposed at a reference position where the 42nd column of the resistor 450 is exposed for plating. In prior art resistors, the film thickness tends to be thinner because the shielding rate of the 41st to 43rd columns is higher than that of other circumferential directions. On the other hand, since most of the 43rd column of the resistor 450 of this embodiment has the same shielding rate as the other circumferential directions and is uniformly arranged, the influence of the current density distribution of the 41st and 42nd columns, which have different shielding rates in other circumferential directions, is mitigated, and the film thickness uniformity or coplanarity is less affected in areas with normal film thickness. As a result, according to this embodiment, when the shielding member 481 is positioned at the reference position, the coating thickness at the periphery of the substrate can be maintained at a normal thickness.

[0089] Next, other aspects of the plating apparatus 1000 of this embodiment will be described. Figure 14 This is a top view schematically illustrating an example of switching the configuration position of the shielding member according to the distribution of the coating thickness at the periphery of the substrate.

[0090] In the above embodiments, an example is shown where the shielding mechanism 485 is configured to switch the shielding member 481 between a reference position, a shielding position, and a retracted position, but this is not a limitation. The shielding mechanism 485 may also be configured to place the shielding member 481 between a shielding position between the anode 430 and the substrate Wf, and a retracted position where it retracts from the anode 430 and the substrate Wf. Figure 14 An example is shown where the shielding mechanism 485 configures the shielding member 481 to switch between a shielding position and a retracted position. Additionally, Figure 14 The diagram illustrates the switching of the configuration position of the shielding member when multiple holes of the resistor 450 are formed at equal intervals along the circumference of the circular plate component.

[0091] Furthermore, in the above embodiment, an example is shown where the rotating mechanism 447 rotates the substrate support 440 unidirectionally at a constant speed, but this is not a limitation. The rotating mechanism 447 may also be configured to rotate the substrate support 440 such that the first portion Wf-e of the substrate Wf, located at a selected azimuth angle position, is located at a different time than the second portion Wf-f of the substrate within the dynamic shielding region DA defined by the resistor 450 and the shielding member 481. The second portion Wf-f is located at a different azimuth angle position than the first portion, but has the same arc length and radius as the first portion. The dynamic shielding region DA is the region where the shielding rate changes when the first portion Wf-e of the substrate is stationary within the dynamic shielding region DA compared to when the second portion Wf-f of the substrate is stationary within the dynamic shielding region DA.

[0092] like Figure 14 As shown, when the first portion Wf-e of the substrate includes a portion with a coating thickness thicker than the second portion Wf-f of the substrate, the shielding mechanism 485 is configured such that when the first portion Wf-e of the substrate is located in the dynamic shielding region DA, the shielding member 481 is positioned in a shielding position. Furthermore, the shielding mechanism 485 is configured such that when the second portion Wf-f of the substrate is located in the dynamic shielding region DA, the shielding member 481 is positioned in a retracted position.

[0093] In addition, the rotation mechanism 447 is configured to rotate the substrate support 440 such that the first part Wf-e (the part with thicker film) of the substrate Wf is in the dynamic shielding region DA for a longer time than the second part Wf-f (the part with normal film thickness).

[0094] Figure 15 This is a graph showing the relationship between the timing of shielding the first part Wf-e of the substrate and the rotational speed of the substrate support. Figure 15 The horizontal axis of the graph represents the rotational position of the first part Wf-e of the substrate Wf, and the vertical axis represents the position of the shielding member (shielding position or retraction position) and the rotational speed (direction of rotation) of the substrate support 440. In this example, as... Figure 15 As shown, when a specific location on the substrate (e.g., a notch on the substrate) is set as a reference (θ = 0), there is a first part Wf-e in the peripheral portion within the range of θ = θ1 to θ = θ2, which is intended to suppress the deposition rate of plating.

[0095] Figure 15 This indicates the position of the shielding member and the rotation speed of the substrate support when one additional action was taken to suppress the deposition rate of the plating in the first part Wf-e of the substrate Wf (the rotation direction of the substrate support was switched twice). For example... Figure 15 As shown, the rotating mechanism 447 first... Figure 15As indicated by arrow A, the substrate support 440 is rotated at a predetermined speed in the first direction. Next, when the shielding mechanism 485 reaches the center of the shielding member 481 at position θ1 of the substrate Wf, it pushes the shielding member 481 towards the shielding position. Next, when the rotation mechanism 447 reaches the center of the shielding member 481 at position θ2 of the substrate Wf, it switches the rotation direction of the substrate support 440, causing it to rotate in the second direction. Next, when the rotation mechanism 447 reaches the center of the shielding member 481 at position θ1 of the substrate Wf, it switches the rotation direction of the substrate support 440, causing it to rotate in the first direction.

[0096] The rotating mechanism 447 switches the rotation direction of the substrate support 440 (causing the substrate support 440 to reciprocate) during the period when the shielding member 481 is positioned in the shielding position, such as... Figure 15 As shown, the shielding member 481 can be positioned in the shielding position for approximately three times the time required for the substrate support 440 to rotate at a constant speed in the first direction. Therefore, according to this embodiment, the thickness of the coating film formed in the first portion Wf-e of the substrate Wf can be strongly suppressed.

[0097] Furthermore, in this embodiment, an example is shown where the rotation direction of the substrate support 440 is reversed (the substrate support 440 reciprocates) when the first portion Wf-e of the substrate is located in the dynamic shielding region DA, but this is not a limitation. The rotation mechanism may also be configured such that when the first portion Wf-e of the substrate is located in the dynamic shielding region DA, the rotation speed of the substrate support 440 is increased (speeded up) or decreased (slowed down), so that the first portion Wf-e of the substrate is located in the dynamic shielding region DA at a different time than the second portion Wf-f of the substrate.

[0098] Figure 16 This is a top view schematically illustrating an example of switching the configuration position of the shielding member according to the distribution of the coating thickness at the periphery of the substrate. Figure 16 This illustrates an example where the shielding mechanism 485 is configured to switch the shielding member 481 between a reference position and a shielding position. Additionally, Figure 16 This indicates the switching of the configuration position of the shielding member when multiple holes of the resistor 450 are formed at equal intervals along the circumference of the circular plate component.

[0099] like Figure 16 As shown, when the first portion Wf-e of the substrate includes a portion with a coating thickness thicker than the second portion Wf-f of the substrate, the shielding mechanism 485 is configured such that when the first portion Wf-e of the substrate is located in the dynamic shielding region DA, the shielding member 481 is positioned in a shielding position. Furthermore, the shielding mechanism 485 is configured such that when the second portion Wf-f of the substrate is located in the dynamic shielding region DA, the shielding member 481 is positioned in a reference position.

[0100] In addition, with Figure 15 As described above, the rotation mechanism 447 is configured to rotate the substrate support 440 by switching the rotation direction of the substrate support 440, such that the first portion Wf-e of the substrate Wf is located in the dynamic shielding region DA for a longer time than the second portion Wf-f. Therefore, according to this embodiment, the formation of a coating film thickness in the first portion Wf-e of the substrate Wf can be strongly suppressed.

[0101] Figure 17 This is a top view schematically illustrating an example of switching the configuration position of the shielding member according to the distribution of the coating thickness at the periphery of the substrate. Figure 17 This illustrates an example where the shielding mechanism 485 is configured to switch the shielding member 481 between a retracted position and a shielded position. Additionally, Figure 17 For example, Figures 11-13 The switching of the arrangement position of the shielding member when the plurality of holes of the resistor 450 are formed unequally along the circumference of the circular plate component as shown in the embodiment.

[0102] like Figure 17 As shown, when the first portion Wf-e of the substrate includes a portion with a coating thickness thicker than the second portion Wf-f of the substrate, the shielding mechanism 485 is configured such that when the first portion Wf-e of the substrate is located in the dynamic shielding region DA, the shielding member 481 is positioned in a shielding position. Furthermore, the shielding mechanism 485 is configured such that when the second portion Wf-f of the substrate is located in the dynamic shielding region DA, the shielding member 481 is positioned in a retracted position.

[0103] In addition, with Figure 15 As described above, the rotation mechanism 447 is configured to rotate the substrate support 440 such that the first portion Wf-e (the thickest portion) of the substrate Wf is located in the dynamic shielding region DA for a longer period than the second portion Wf-f (the portion with normal film thickness). Therefore, according to this embodiment, the formation of a coating film thickness in the first portion Wf-e of the substrate Wf can be strongly suppressed.

[0104] Figure 18 This is a top view schematically illustrating an example of switching the configuration position of the shielding member according to the distribution of the coating thickness at the periphery of the substrate. Figure 18 This illustrates an example where the shielding mechanism 485 is configured to switch the shielding member 481 between a reference position and a shielding position. Additionally, Figure 18 For example, Figures 11-13 The switching of the arrangement position of the shielding member when the plurality of holes of the resistor 450 are formed unequally along the circumference of the circular plate component as shown in the embodiment.

[0105] like Figure 18As shown, when the first portion Wf-e of the substrate includes a portion with a coating thickness thicker than the second portion Wf-f of the substrate, the shielding mechanism 485 is configured such that when the first portion Wf-e of the substrate is located in the dynamic shielding region DA, the shielding member 481 is positioned in a shielding position. Furthermore, the shielding mechanism 485 is configured such that when the second portion Wf-f of the substrate is located in the dynamic shielding region DA, the shielding member 481 is positioned in a reference position.

[0106] In addition, with Figure 15 As described above, the rotation mechanism 447 is configured to rotate the substrate support 440 such that the first portion Wf-e (the thickest portion) of the substrate Wf is located in the dynamic shielding region DA for a longer period than the second portion Wf-f (the portion with normal film thickness). Therefore, according to this embodiment, the formation of a coating film thickness in the first portion Wf-e of the substrate Wf can be strongly suppressed.

[0107] Figure 19 This is a top view schematically illustrating an example of switching the configuration position of the shielding member according to the distribution of the coating thickness at the periphery of the substrate. Figure 19 This illustrates an example where the shielding mechanism 485 is configured to switch the shielding member 481 between a shielding position and a retracted position. Additionally, Figure 19 For example, Figures 11-13 The switching of the arrangement position of the shielding member when the plurality of holes of the resistor 450 are formed unequally along the circumference of the circular plate component as shown in the embodiment.

[0108] like Figure 19 As shown, when the first portion Wf-e of the substrate includes a portion with a coating thickness thinner than the second portion Wf-f of the substrate, the shielding mechanism 485 is configured such that when the first portion Wf-e of the substrate is located in the dynamic shielding region DA, the shielding member 481 is positioned in a retracted position. Furthermore, the shielding mechanism 485 is configured such that when the second portion Wf-f of the substrate is located in the dynamic shielding region DA, the shielding member 481 is positioned in a shielding position.

[0109] In addition, with Figure 15 As described above, the rotation mechanism 447 is configured to rotate the substrate support 440 such that the first portion Wf-e (the thinner portion) of the substrate Wf is located in the dynamic shielding region DA for a longer time than the second portion Wf-f (the portion with normal film thickness). Therefore, according to this embodiment, it is possible to strongly promote the formation of a coating film on the first portion Wf-e of the substrate Wf.

[0110] Figure 20 This is a top view schematically illustrating an example of switching the configuration position of the shielding member according to the distribution of the coating thickness at the periphery of the substrate. Figure 20This illustrates an example where the shielding mechanism 485 is configured to switch the shielding member 481 between a reference position, a shielding position, and a retracted position. Additionally, Figure 20 For example, Figures 11-13 The switching of the arrangement position of the shielding member when the plurality of holes of the resistor 450 are formed unequally along the circumference of the circular plate component as shown in the embodiment.

[0111] like Figure 20 As shown, when the first portion Wf-e1 of the substrate includes a portion with a coating thickness thicker than the second portion Wf-f of the substrate, the shielding mechanism 485 is configured such that when the first portion Wf-e1 of the substrate is located in the dynamic shielding region DA, the shielding member 481 is positioned in a shielding position. Furthermore, when the first portion Wf-e2 of the substrate includes a portion with a coating thickness thinner than the second portion Wf-f of the substrate, the shielding mechanism 485 is configured such that when the first portion Wf-e2 of the substrate is located in the dynamic shielding region DA, the shielding member 481 is positioned in a retracted position. Additionally, the shielding mechanism 485 is configured such that when the second portion Wf-f of the substrate is located in the dynamic shielding region DA, the shielding member 481 is positioned in a reference position.

[0112] In addition, with Figure 15 As described above, the rotation mechanism 447 is configured such that the substrate support 440 rotates with the first portion Wf-e1 (thick film portion) and e2 (thin film portion) of the substrate Wf in the dynamic shielding region DA for a longer time than the second portion Wf-f (normal film thickness portion). Therefore, according to this embodiment, it is possible to strongly suppress the formation of a coating thickness in the first portion Wf-e1 of the substrate Wf and strongly promote the formation of a coating thickness in the first portion Wf-e2 of the substrate Wf.

[0113] Several embodiments of the present invention have been described above. However, these embodiments are provided for ease of understanding and are not intended to limit the invention. The present invention can be modified and improved without departing from its spirit, and its equivalents are naturally included. Furthermore, the constituent elements described in the claims and specification can be arbitrarily combined or omitted within the scope of solving at least a portion of the above-mentioned problems or achieving at least a portion of the effects.

[0114] As one embodiment, this application discloses a plating apparatus, comprising: a plating tank configured to contain a plating solution; an anode disposed in the plating tank; a substrate support configured to hold a substrate with the plating surface facing downwards; a lifting mechanism configured to lift the substrate support; a rotating mechanism configured to rotate the substrate support; a shielding member capable of shielding an electric field formed between the anode and the substrate; and a shielding mechanism configured to switch between a reference position between the anode and the substrate, a shielding position with an electric field shielding area larger than the reference position, and a retraction position retracting from the anode and the substrate.

[0115] In addition, as an embodiment, this application discloses a plating apparatus, wherein the shielding mechanism is configured to switch the shielding member between the reference position, the shielding position and the retraction position according to the distribution of the plating film thickness formed on the periphery of the substrate.

[0116] In addition, as an embodiment, this application discloses a plating apparatus, which further includes a film thickness sensor configured to measure the plating film thickness at the periphery of the substrate, and the shielding mechanism configured to switch the shielding member between the reference position, the shielding position, and the retraction position based on the distribution of the plating film thickness at the periphery of the substrate measured by the film thickness sensor.

[0117] In addition, as an embodiment, this application discloses a plating apparatus, wherein the shielding mechanism is configured such that, for the first peripheral portion of the substrate having a first plating film thickness, the shielding member is disposed at the reference position; for the second peripheral portion of the substrate having a second plating film thickness that is thicker than the first plating film, the shielding member is disposed at the shielding position; and for the third peripheral portion of the substrate having a third plating film thickness that is thinner than the first plating film, the shielding member is disposed at the retracted position.

[0118] In addition, as an embodiment, this application discloses a plating apparatus, wherein the shielding mechanism is configured to switch between the reference position, the shielding position and the retraction position according to the type of substrate held by the substrate support.

[0119] In addition, as an embodiment, this application discloses a plating method, which includes: a lowering step, wherein a substrate support holding a substrate with the plating surface facing downward is lowered into a plating tank; a rotating step, wherein the substrate support is rotated; a plating step, wherein the plating surface of the substrate lowered into the plating tank is plating treated; and a shielding step, wherein a shielding member capable of shielding the electric field formed between an anode and a substrate disposed in the plating tank is configured to switch between a reference position between the anode and the substrate, a shielding position with an electric field shielding area larger than the reference position, and a retreating position that retreats from the anode and the substrate.

[0120] In addition, as an embodiment, this application discloses a plating method, wherein the above-mentioned shielding step is configured to switch the shielding member between the reference position, the shielding position and the retraction position according to the distribution of the plating film thickness formed on the periphery of the substrate.

[0121] In addition, as an embodiment, this application discloses a plating method, which further includes a measurement step to measure the plating film thickness at the periphery of the substrate, and the shielding step is configured to switch the shielding member between the reference position, the shielding position and the retraction position based on the distribution of the plating film thickness at the periphery of the substrate measured by the measurement step.

[0122] In addition, as an embodiment, this application discloses a plating method, wherein the above-mentioned shielding step includes: a first configuration step, in which the shielding member is configured at the reference position for the first peripheral portion of the substrate having a first plating film thickness; a second configuration step, in which the shielding member is configured at the shielding position for the second peripheral portion of the substrate having a second plating film thickness that is thicker than the first plating film; and a third configuration step, in which the shielding member is configured at the retracted position for the third peripheral portion of the substrate having a third plating film thickness that is thinner than the first plating film.

[0123] In addition, as an embodiment, this application discloses a plating method, which further includes a determination step, which determines the type of substrate held by the substrate support, and the shielding step is configured to switch the shielding member between the reference position, the shielding position and the retraction position according to the type of substrate determined by the determination step.

[0124] In addition, as one embodiment, this application discloses a plating apparatus, wherein the plating apparatus includes: a plating tank configured to contain a plating solution; an anode disposed in the plating tank; a substrate support configured to hold a substrate with the plating surface facing downwards; a resistor disposed between the anode and the substrate support, having a partially shielding area; a lifting mechanism configured to lift the substrate support; a rotating mechanism configured to rotate the substrate support; a shielding member capable of shielding the electric field formed between the anode and the substrate; and a shielding mechanism configured to shield the electric field formed between the anode and the substrate. The component is disposed between a shielding position between the anode and the substrate and a retraction position retracting from the anode and the substrate. The rotation mechanism is configured to rotate the substrate support such that a first portion of the substrate located at a selected azimuth angle position is in a dynamic shielding region at a different time than a second portion of the substrate. The second portion of the substrate is located at an azimuth angle position different from the first portion and has the same arc length and radius as the first portion. The dynamic shielding region is the area where the resistor and the shielding component overlap when the shielding component is disposed at the shielding position.

[0125] In addition, as an embodiment, this application discloses a plating apparatus, wherein the rotating mechanism is configured such that when the first part of the substrate is located in the dynamic shielding region, by increasing or decreasing the rotation speed of the substrate support or reversing the rotation direction of the substrate support, the first part of the substrate is located in the dynamic shielding region at a different time than the second part of the substrate.

[0126] In addition, as an embodiment, this application discloses a plating apparatus, wherein the first portion of the substrate includes a portion of plating film that is thicker or thinner than the second portion of the substrate.

[0127] In addition, as an embodiment, this application discloses a plating apparatus, wherein when the first part of the substrate includes a portion with a plating film thickness that is thicker than the second part of the substrate, the shielding mechanism is configured such that when the first part of the substrate is located in the dynamic shielding area, the shielding member is disposed at the shielding position.

[0128] In addition, as an embodiment, this application discloses a plating apparatus, wherein when the first part of the substrate includes a portion with a plating film thickness that is thinner than the second part of the substrate, the shielding mechanism is configured such that when the first part of the substrate is located in the dynamic shielding area, the shielding member is positioned in the retracted position.

[0129] In addition, as an embodiment, this application discloses a plating apparatus in which the shielding rate changes when the first part of the substrate is held in the dynamic shielding area compared to when the second part of the substrate is held in the dynamic shielding area.

[0130] In addition, as one embodiment, this application discloses a plating apparatus, comprising: a plating tank configured to contain a plating solution; an anode disposed within the plating tank; a substrate support configured to hold a substrate with the plating surface facing downwards; a resistor disposed between the anode and the substrate support, having a plurality of holes penetrating the anode side and the substrate support side; a lifting mechanism configured to lift the substrate support; a rotating mechanism configured to rotate the substrate support; a shielding member capable of shielding the electric field formed between the anode and the substrate; and a shielding mechanism configured to place the shielding member between a shielding position between the anode and the substrate and a retraction position retracting from the anode and the substrate. The resistive element in a dynamic shielding region overlapping with the shielding member disposed at the aforementioned shielding position includes: a first region having a first shielding ratio; a second region disposed on the inner side away from the first region having a second shielding ratio greater than the first shielding ratio; and a third region disposed between the first region and the second region having a third shielding ratio greater than the first shielding ratio and less than the second shielding ratio, the third region extending circumferentially beyond the dynamic shielding region and uniformly having the third shielding ratio in the extended region; the resistive element includes a fourth region disposed on the inner side of the second region and in other circumferential portions of the second region, having a fourth shielding ratio less than the second shielding ratio and the same as the third shielding ratio.

[0131] In addition, as an embodiment, this application discloses a plating apparatus, wherein the resistive element further includes a fifth region, which is disposed in other circumferential portions of the first region and other circumferential portions of the third region, and has an opening larger than the hole.

[0132] In addition, as an embodiment, this application discloses a plating apparatus, wherein the resistive element further includes a sixth region, which is disposed in the other circumferential portions of the first region and the fifth region, and has a sixth shading rate that is greater than the first shading rate.

[0133] In addition, as an embodiment, this application discloses a plating apparatus, wherein the first region has an area of ​​less than 0.35% of the total area of ​​the resistive element opposite to the substrate held by the substrate support.

[0134] Explanation of reference numerals in the attached figures

[0135] 400…plating module; 410…plating tank; 430…anode; 440…substrate support; 443…lifting mechanism; 447…rotating mechanism; 450…resistor; 452…hole; 454…opening; 481…shielding member; 485…shielding mechanism; 490…film thickness sensor; 1000…plating apparatus; Wf…substrate; Wf-a…plated surface; Wf-b…first periphery; Wf-c…second periphery; Wf-d…third periphery; Wf-e…first part; Wf-f…second part; DA…dynamic shielding area; S1…first area; S2…second area; S3…third area; S4…fourth area; S5…fifth area; S6…sixth area.

Claims

1. A plating apparatus, characterized in that, Include: A plating tank, wherein the plating tank is configured to contain a plating solution; Anode, wherein the anode is disposed within the plating tank; A substrate holder configured to hold a substrate with the plated surface facing downwards. A resistor element is disposed between the anode and the substrate support, and has a plurality of holes penetrating the anode side and the substrate support side; A lifting mechanism configured to lift the base plate support; A rotating mechanism configured to rotate the substrate support; A shielding member capable of shielding the electric field formed between the anode and the substrate; as well as A shielding mechanism is configured to switch between a reference position between the anode and the substrate, a shielding position with an electric field shielding area larger than the reference position, and a retrenched position retracting from the anode and the substrate. The resistive element, in a dynamic shading region overlapping with the shading member disposed at the shading position, includes: a first region having a first shading rate; a second region disposed on the inner side away from the first region having a second shading rate greater than the first shading rate; and a third region disposed between the first region and the second region having a third shading rate greater than the first shading rate and less than the second shading rate.

2. The plating apparatus according to claim 1, characterized in that, The shielding mechanism is configured to switch the shielding member between the reference position, the shielding position, and the retraction position based on the distribution of the coating thickness formed at the periphery of the substrate.

3. The plating apparatus according to claim 1, characterized in that, The substrate further includes a film thickness sensor configured to measure the thickness of the deposited film at the periphery of the substrate. The shielding mechanism is configured to switch the shielding member between the reference position, the shielding position, and the retraction position based on the distribution of the coating thickness at the periphery of the substrate as measured by the film thickness sensor.

4. The plating apparatus according to claim 2 or 3, characterized in that, The shielding mechanism is configured such that the shielding member is positioned at the reference position for a first peripheral portion of the substrate having a first coating thickness, at the shielding position for a second peripheral portion of the substrate having a second coating thickness that is thicker than the first coating thickness, and at the retracted position for a third peripheral portion of the substrate having a third coating thickness that is thinner than the first coating thickness.

5. The plating apparatus according to claim 1, characterized in that, The shielding mechanism is configured to switch the shielding member between the reference position, the shielding position, and the retraction position, depending on the type of substrate held by the substrate support.

6. A plating method, wherein the plating method uses a plating apparatus. The plating apparatus has the following features: A plating tank, wherein the plating tank is configured to contain a plating solution; Anode, wherein the anode is disposed within the plating tank; A substrate holder configured to hold a substrate with the plated surface facing downwards. A resistor element is disposed between the anode and the substrate support, and has a plurality of holes penetrating the anode side and the substrate support side; as well as A shielding member capable of shielding the electric field formed between the anode and the substrate. The plating method is characterized by comprising: A lowering step, which lowers the substrate support, which holds the substrate with the plated surface facing downwards, into the plating tank. A rotation step, which causes the substrate support to rotate; A plating step, wherein the plating process is performed on the plating surface of the substrate that has descended into the plating tank; and The shielding step involves configuring the shielding member, capable of shielding the electric field formed between the anode and the substrate disposed within the plating bath, to switch between a reference position between the anode and the substrate, a shielding position with an electric field shielding area larger than the reference position, and a retraction position that moves away from the anode and the substrate. The resistive element, in a dynamic shading region overlapping with the shading member disposed at the shading position, includes: a first region having a first shading rate; a second region disposed on the inner side away from the first region having a second shading rate greater than the first shading rate; and a third region disposed between the first region and the second region having a third shading rate greater than the first shading rate and less than the second shading rate.

7. The plating method according to claim 6, characterized in that, The shielding step is configured to switch the shielding member between the reference position, the shielding position, and the retraction position based on the distribution of the coating thickness formed at the periphery of the substrate.

8. The plating method according to claim 6, characterized in that, The method further includes a measurement step, which measures the thickness of the coating film at the periphery of the substrate. The shielding step is configured to switch the shielding member between the reference position, the shielding position, and the retraction position based on the distribution of the coating thickness at the periphery of the substrate as measured by the measurement step.

9. The plating method according to claim 7 or 8, characterized in that, The masking steps include: a first configuration step, in which the masking member is configured at the reference position for a first peripheral portion of the substrate having a first coating film thickness; a second configuration step, in which the masking member is configured at the masking position for a second peripheral portion of the substrate having a second coating film thickness greater than the first coating film thickness; and a third configuration step, in which the masking member is configured at the retracted position for a third peripheral portion of the substrate having a third coating film thickness less than the first coating film thickness.

10. The plating method according to claim 6, characterized in that, The system further includes a determination step that identifies the type of substrate held by the substrate support. The shielding step is configured to switch the shielding member between the reference position, the shielding position, and the retreat position based on the type of substrate determined by the determination step.

11. A plating apparatus, characterized in that, Include: A plating tank, wherein the plating tank is configured to contain a plating solution; Anode, wherein the anode is disposed within the plating tank; A substrate holder configured to hold a substrate with the plated surface facing downwards. A resistor is disposed between the anode and the substrate support and has a partially shielded area; A lifting mechanism configured to lift the base plate support; A rotating mechanism configured to rotate the substrate support; A shielding member capable of shielding the electric field formed between the anode and the substrate; and A shielding mechanism, wherein the shielding member is configured to be positioned between a shielding position between the anode and the substrate, and a retracted position retracting from the anode and the substrate. The rotation mechanism is configured to rotate the substrate support such that a first portion of the substrate located at a selected azimuth angle is in a dynamic shielding region at a different time than a second portion of the substrate. The second portion of the substrate is located at a different azimuth angle than the first portion and has the same arc length and radius as the first portion. The dynamic shielding region is the area where the resistor and the shielding member overlap when the shielding member is positioned in the shielding position. The resistive element, in the dynamic shading region overlapping with the shading member disposed at the shading position, includes: a first region having a first shading rate; a second region disposed on the inner side away from the first region having a second shading rate greater than the first shading rate; and a third region disposed between the first region and the second region having a third shading rate greater than the first shading rate and less than the second shading rate.

12. The plating apparatus according to claim 11, characterized in that, The rotating mechanism is configured such that, when the first part of the substrate is located in the dynamic shielding region, by increasing or decreasing the rotation speed of the substrate support or reversing the rotation direction of the substrate support, the first part of the substrate is located in the dynamic shielding region at a different time than the second part of the substrate.

13. The plating apparatus according to claim 12, characterized in that, The first portion of the substrate includes a portion with a coating thickness that is either thicker or thinner than the second portion of the substrate.

14. The plating apparatus according to claim 13, characterized in that, In the case where the first portion of the substrate includes a portion with a coating thickness that is thicker than the second portion of the substrate. The shielding mechanism is configured such that when the first portion of the substrate is located in the dynamic shielding area, the shielding member is positioned at the shielding location.

15. The plating apparatus according to claim 13, characterized in that, In the case where the first portion of the substrate includes a portion with a coating thickness thinner than the second portion of the substrate, The shielding mechanism is configured such that when the first portion of the substrate is located in the dynamic shielding area, the shielding member is positioned in the retracted position.

16. The plating apparatus according to claim 15, characterized in that, The shading rate changes when the first part of the substrate is retained in the dynamic shading area compared to when the second part of the substrate is retained in the dynamic shading area.

17. A plating apparatus, characterized in that, Include: A plating tank, wherein the plating tank is configured to contain a plating solution; Anode, wherein the anode is disposed within the plating tank; A substrate holder configured to hold a substrate with the plated surface facing downwards. A resistor element is disposed between the anode and the substrate support, and has a plurality of holes penetrating the anode side and the substrate support side; A lifting mechanism configured to lift the base plate support; A rotating mechanism configured to rotate the substrate support; A shielding member capable of shielding the electric field formed between the anode and the substrate; and A shielding mechanism, wherein the shielding member is configured to be positioned between a shielding position between the anode and the substrate, and a retracted position retracting from the anode and the substrate. The resistive element, in a dynamic shielding region overlapping with the shielding member disposed at the shielding position, includes: a first region having a first shielding ratio; a second region disposed on an inner side away from the first region, having a second shielding ratio greater than the first shielding ratio; and a third region disposed between the first region and the second region, having a third shielding ratio greater than the first shielding ratio and less than the second shielding ratio, the third region extending circumferentially beyond the dynamic shielding region, and uniformly having the third shielding ratio over the extended region. The resistor includes a fourth region disposed inside the second region and in other circumferential portions of the second region, having a fourth shading rate that is smaller than the second shading rate but the same as the third shading rate.

18. The plating apparatus according to claim 17, characterized in that, The resistive element further includes a fifth region, which is disposed in the other circumferential portions of the first region and the other circumferential portions of the third region, and has an opening larger than the hole.

19. The plating apparatus according to claim 18, characterized in that, The resistor further includes a sixth region disposed in the circumferential portion of the first region and the fifth region, having a sixth shading rate greater than the first shading rate.

20. The plating apparatus according to any one of claims 17 to 19, characterized in that, The first region has an area of ​​less than 0.35% of the total area of ​​the resistors that are opposite the substrate held by the substrate support.

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