Heat treatment method for improving optical performance of zinc selenide (ZnSe) single crystal

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By heat treatment of ZnSe single crystal grown by the THM method, the flux inclusions were eliminated, the optical performance of ZnSe crystals was improved, the influence of flux inclusions on optical performance was solved, and the infrared transmittance was significantly improved.

CN120330893APending Publication Date: 2025-07-18TIANJIN UNIVERSITY OF TECHNOLOGY

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Patent Information

Application Number: CN202510425329.0
Authority / Receiving Office: CN · China
Patent Type: Applications(China)
Current Assignee / Owner
Filing Date: 2025-04-07
Publication Date: 2025-07-18

Application Information

Patent Timeline

07 Apr 2025

Application

CN202510425329.0

18 Jul 2025

Publication

CN120330893A

IPC: C30B33/02; C30B29/48

CPC: C30B33/02; C30B29/48

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Application Domain

Polycrystalline material growth After-treatment details

Technology Topics

Optical property Tube furnace

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AI Technical Summary

Technical Problem

The presence of flux inclusions in the ZnSe single crystal grown by the THM method affects the optical properties of the crystal and hinders its development in optoelectronic devices.

Method used

By using the heat treatment method, after polishing, cleaning and vacuum encapsulating the ZnSe crystal, the heat treatment is carried out under a temperature gradient of 550 to 750°C to ensure that the flux inclusion PbCl2 melts and heat transfers to the surface in the matrix, and then removes by polishing to avoid thermal decomposition and component volatility.

Benefits of technology

The infrared transmittance of ZnSe crystals has been significantly improved from 38% to 70%, improving optical performance and eliminating the negative impact of flux inclusions on optical performance.

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Abstract

The invention belongs to the technical field of crystal annealing, and discloses a heat treatment method for improving the optical performance of a zinc selenide (ZnSe) single crystal, which specifically comprises the following steps of: 1, polishing the ZnSe crystal grown by a moving heater method; 2, cleaning the heat-treated quartz tube and the quartz bracket; and 3, vertically placing the polished ZnSe crystal on a quartz support, then putting the quartz support into a heat treatment quartz tube, and carrying out vacuum-pumping sealing treatment. And 4, putting the sealed quartz tube into a three-section horizontal tube furnace, setting proper heat treatment process parameters, and carrying out heat treatment on the ZnSe crystal. The heat treatment method provided by the invention is simple and efficient, a PbCl2 flux inclusion in the ZnSe crystal grown by a moving heater method can be removed, and the infrared transmittance of the crystal is improved from 38% to 70%.

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