Quartz crucible performance detection method based on high-temperature drawing process

By sampling, slicing, cleaning, drying and heating calcining the quartz crucible samples, the changes of bubbles in the high-temperature pulling process are simulated, which solves the problem of accurate prediction of bubble expansion state in the existing technology, improves the accuracy and reliability of bubble state prediction, and ensures the stability of the crystal pulling process and product quality.

CN120685636APending Publication Date: 2025-09-23ADVANCED QUARTZ MATERIAL (HANGZHOU) CO LTD

Patent Information

Application Number
CN202510934263.8
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-07-08
Publication Date
2025-09-23

AI Technical Summary

Technical Problem

Existing technologies make it difficult to accurately predict the expansion state of bubbles in quartz crucibles during high-temperature drawing, resulting in increased production risks.

Method used

By sampling, slicing, cleaning, drying, heating, calcining and re-slicing the quartz crucible samples, the microbubble data of the samples are obtained, the changes of bubbles during high-temperature drawing are simulated, and the bubble expansion state is accurately predicted.

Benefits of technology

The accuracy and reliability of bubble state prediction are improved, potential risks in the crystal pulling process are reduced, and product quality and production stability are ensured.

✦ Generated by Eureka AI based on patent content.

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Abstract

The invention provides a quartz crucible performance detection method based on a high-temperature drawing process. The quartz crucible performance detection method comprises the following steps: S1, selecting a quartz crucible sample from a batch of prepared quartz crucibles; s2, sampling the quartz crucible sample to obtain a sample block to be experimented; s3, slicing the sample block along the longitudinal direction of the quartz crucible to obtain a first sample wafer, and photographing the first sample wafer to obtain microbubble data of the first sample wafer; s4, cleaning and drying the sliced sample blocks; s5, the dried sample blocks are heated and calcined, and heating and calcining parameters are designed according to parameters in the crystal pulling process; s6, slicing the calcined sample block along the longitudinal direction of the quartz crucible again to obtain a second sample wafer, and photographing the second sample wafer to obtain microbubble data of the second sample wafer; and S7, based on the microbubble data of the first sample wafer and the microbubble data of the second sample wafer, obtaining a performance detection result of the batch of quartz crucibles so as to improve the accuracy of crucible performance detection.
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Description

Technical Field

[0001] The present invention relates to the technical field of crucible performance detection, and in particular to a quartz crucible performance detection method based on a high-temperature drawing process. Background Art

[0002] Quartz crucibles are essential components for producing polycrystalline silicon ingots and pulling semiconductor single crystal silicon rods. They serve as carriers for polycrystalline or single crystal silicon. Quartz crucibles withstand temperatures of 1400-1600°C during the crystal pulling process. During this high-temperature pulling process, bubbles in the transparent layer of the crucible expand and migrate toward the inner wall of the crucible. These bubbles can then be eroded by the silicon melt and rupture. Once ruptured, fragments can dissolve into the silicon melt, directly impacting the quality of the single crystal silicon rod. Therefore, the bubbles in the transparent layer of the crucible must be inspected before shipment to ensure quality.

[0003] Currently, traditional crucible bubble detection primarily uses cameras, optical microscopes, lasers, and other methods to measure the current size and number of bubbles in quartz crucibles. However, these traditional detection methods struggle to accurately predict bubble expansion, leading to increased production risks. Summary of the Invention

[0004] In view of this, the present invention provides a quartz crucible performance detection method based on a high-temperature drawing process to solve the technical problem that the existing technology is difficult to accurately predict the bubble expansion state and increases production risks.

[0005] The technical solution adopted by the present invention to solve its technical problem is: A method for testing the performance of a quartz crucible based on a high-temperature drawing process comprises the following steps: S1. Selecting a quartz crucible sample from a batch of prepared quartz crucibles; S2. Sampling the quartz crucible sample to obtain a sample to be tested; S3, slicing the sample along the longitudinal direction of the quartz crucible to obtain a first sample, and photographing the first sample to obtain microbubble data of the first sample; S4, cleaning and drying the sliced ​​sample; S5. heating and calcining the dried sample, wherein the parameters of the heating and calcining are designed according to the parameters of the crystal pulling process; S6. Slicing the calcined sample again along the longitudinal direction of the quartz crucible to obtain a second sample, and photographing the second sample to obtain microbubble data of the second sample; S7. Obtain performance test results of the batch of quartz crucibles based on the microbubble data of the first sample and the microbubble data of the second sample.

[0006] Preferably, in step S2, sampling the quartz crucible sample to obtain the sample block to be tested specifically includes: sampling from three positions of the straight wall, R corner and bottom of the quartz crucible sample respectively to obtain the straight wall sample block, R corner sample block and bottom sample block to be tested.

[0007] Preferably, in step S3, the sample block is sliced ​​along the longitudinal direction of the quartz crucible to obtain a first sample, and the first sample is photographed to obtain microbubble data of the first sample, specifically comprising: slicing the straight-wall sample, the R-angle sample and the bottom sample along the longitudinal direction of the quartz crucible respectively to obtain a straight-wall first sample, an R-angle first sample and a bottom first sample, and photographing the straight-wall first sample, the R-angle first sample and the bottom first sample respectively to obtain microbubble data of the straight-wall first sample, the R-angle first sample and the bottom first sample.

[0008] Preferably, in step S6, the calcined sample is sliced ​​again along the longitudinal direction of the quartz crucible to obtain a second sample, and the second sample is photographed to obtain microbubble data of the second sample, which specifically includes the following steps: the calcined straight-wall sample, R-angle sample and bottom sample are sliced ​​again along the longitudinal direction of the quartz crucible to obtain a straight-wall second sample, R-angle second sample and bottom second sample, and the straight-wall second sample, the R-angle second sample and the bottom second sample are photographed to obtain microbubble data of the straight-wall second sample, the R-angle second sample and the bottom second sample.

[0009] Preferably, in step S7, based on the microbubble data of the first sample and the microbubble data of the second sample, obtaining the performance test results of the batch of quartz crucibles specifically includes the following steps: Obtaining a first performance test result of the quartz crucible sample based on the microbubble data of the first straight-wall sample and the microbubble data of the second straight-wall sample; Obtaining a second performance test result of the quartz crucible sample based on the microbubble data of the first R-angle sample and the microbubble data of the second R-angle sample; Obtaining a third performance test result of the quartz crucible sample based on the microbubble data of the first bottom sample and the microbubble data of the second bottom sample; Based on the first performance test result, the second performance test result and the third performance test result of the quartz crucible sample, the performance test results of the batch of quartz crucibles are obtained.

[0010] Preferably, the size of the sample block is 45-55*45-55.

[0011] Preferably, the thickness of the slice is 1.5-2.5 mm.

[0012] Preferably, in step S5, the heating and calcining temperature is 1430-1500°C.

[0013] Preferably, the microbubble data includes the number of microbubbles, the depth of microbubbles, and the size of microbubbles. In step S7, the performance test results of the batch of quartz crucibles are obtained based on the microbubble data of the first sample and the microbubble data of the second sample, which specifically includes the following steps: determining a microbubble expansion degree of the second sample based on the microbubble depth and microbubble size of the first sample and the microbubble depth and microbubble size of the second sample; When the microbubble expansion degree of the second sample is less than the preset expansion degree, and the number of microbubbles in the second sample is less than the preset number, it indicates that the performance of the quartz crucibles in this batch meets the use requirements of the quartz crucibles.

[0014] Preferably, the preset expansion degree is 10-11 times, and the preset number is 45-55.

[0015] Compared with the prior art, the present invention has the following beneficial effects: The present invention simulates the use process of a quartz crucible and compares the changes in microbubbles in the transparent layer before and after use, thereby accurately predicting the expansion state of bubbles in the quartz crucible before and after use, effectively improving the accuracy and reliability of bubble state prediction, thereby effectively preventing potential risks in the crystal pulling process, ensuring crystal pulling stability, and improving product quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 The figure is a flow chart of the method for detecting the performance of a quartz crucible based on a high-temperature drawing process of the present invention.

[0017] Figure 2 Schematic diagram of the structure of a quartz crucible.

[0018] Figure 3 Schematic diagram of the sampling positions of the straight wall and R corner of the quartz crucible in the present invention.

[0019] Figure 4 Schematic diagram of the sampling position at the bottom of the quartz crucible in the present invention. DETAILED DESCRIPTION

[0020] The technical solutions and technical effects of the embodiments of the present invention are further elaborated below in conjunction with the accompanying drawings of the present invention.

[0021] Please see Figure 1 A method for detecting the performance of a quartz crucible based on a high-temperature drawing process comprises the following steps: S1. Selecting a quartz crucible sample from a batch of prepared quartz crucibles; S2. Sampling the quartz crucible sample to obtain a sample to be tested; S3. Slicing the sample along the longitudinal direction of the quartz crucible to obtain a first sample, and photographing the first sample to obtain microbubble data of the first sample; S4, cleaning and drying the sliced ​​sample; S5. heating and calcining the dried sample, wherein the parameters of the heating and calcining are designed according to the parameters of the crystal pulling process; S6. Slice the calcined sample again along the longitudinal direction of the quartz crucible to obtain a second sample, and photograph the second sample to obtain microbubble data of the second sample; S7. Based on the microbubble data of the first sample and the microbubble data of the second sample, obtain the performance test results of the batch of quartz crucibles.

[0022] After a batch of quartz crucibles is prepared, it is necessary to perform a performance test on the batch of quartz crucibles. Specifically, in the present invention, a quartz crucible sample is first selected from a batch of prepared quartz crucibles as a representative for experiment, wherein the quartz crucible sample is sampled to obtain a sample to be tested. During the experiment, the sample is first sliced ​​along the longitudinal direction of the quartz crucible to obtain a first sample, and the first sample is photographed to obtain the microbubble data of the first sample, thereby obtaining the state of the microbubbles in the transparent layer of the quartz crucible before use. The sliced ​​sample is then cleaned and dried to maintain the cleanliness of the sample and avoid impurities affecting the accuracy of subsequent experimental results. The dried sample is then heated and calcined, wherein the parameters of the heating and calcining are designed according to the parameters of the crystal pulling process, that is, to simulate the changes in the quartz crucible during the crystal pulling process. Finally, the calcined sample is sliced ​​again along the longitudinal direction of the quartz crucible to obtain a second sample, and the second sample is photographed to obtain the microbubble data of the second sample, thereby obtaining the state of the microbubbles in the transparent layer of the quartz crucible after use. Based on the microbubble data of the first sample and the microbubble data of the second sample, the changes in the microbubbles in the transparent layer of the quartz crucible before and after use can be seen, thereby judging the instructions of the batch of quartz crucibles and obtaining the performance test results of the batch of quartz crucibles. Therefore, the present invention simulates the use process of the quartz crucible and compares the changes in the microbubbles in the transparent layer before and after use, so as to accurately predict the expansion state of the bubbles in the quartz crucible before and after use, effectively improving the accuracy and reliability of the bubble state prediction, thereby effectively preventing potential risks in the crystal pulling process, ensuring the stability of crystal pulling, and improving product quality.

[0023] In some embodiments, quartz crucible samples can be randomly selected from a batch of manufactured quartz crucibles. Multiple samples can be randomly selected from a batch of manufactured quartz crucibles to improve the reliability of the test results. In another embodiment, when selecting quartz crucible samples, products from the batch that fail to meet the standards in appearance or dimensions can be selected. Because slicing and calcination are required during performance testing, using products with failed appearance or dimensions as samples can reduce the loss of normal products. Products with process abnormalities should be avoided.

[0024] Furthermore, in some embodiments, in step S2, the quartz crucible sample is sampled to obtain a sample to be tested, specifically comprising: sampling from the straight wall, R corner and bottom of the quartz crucible sample respectively to obtain a straight wall sample, an R corner sample and a bottom sample to be tested. By sampling from the straight wall, R corner and bottom of the quartz crucible sample respectively, the changes in microbubbles at different positions of the quartz crucible before and after use can be detected, thereby more comprehensively detecting the microbubble status of the quartz crucible before and after use, and obtaining more accurate performance test results of the quartz crucible. Specifically, please refer to Figure 2 The quartz crucible can be divided into three parts, including the straight wall W, the R corner R and the bottom B. When sampling at the straight wall, R corner and bottom positions, the sampling position can be randomly selected at each position. For example, when selecting the sampling position at the straight wall position, it can be in the middle of the straight wall, or near the top, etc.; when selecting the sampling position at the R corner position, it can be close to the straight wall or close to the bottom; when selecting the sampling position at the bottom position, it can be at the center of the bottom or close to the R corner. The above examples are only examples and are not limited here. The sampling position can be randomly selected at the corresponding position. In addition, the sample blocks sampled at each position are the same size to ensure the consistency and reliability of the experiment. The size of the sample block is 45-55mm*45-55mm.

[0025] In some embodiments, when sampling, two groups of samples can be taken for parallel experiments to reduce the impact of accidental errors and systematic errors on the experiment. Figure 3 and Figure 4 As shown, two adjacent straight wall samples W are taken in the middle of the straight wall, and the size of each straight wall sample W is 50*50mm; two adjacent R corner samples are taken in the middle of the R corner, and the size of each R corner sample R is 50*50mm; two adjacent bottom sample blocks B are taken in the center of the bottom, and the size of each bottom sample block B is 50*50mm.

[0026] Furthermore, in step S3, the sample is sliced ​​along the longitudinal direction of the quartz crucible to obtain a first sample, and the first sample is photographed to obtain microbubble data of the first sample, specifically comprising: slicing the straight-wall sample, the R-angled sample, and the bottom sample along the longitudinal direction of the quartz crucible to obtain a straight-walled first sample, an R-angled first sample, and a bottom first sample, and photographing the straight-walled first sample, the R-angled first sample, and the bottom first sample to obtain microbubble data of the straight-walled first sample, the R-angled first sample, and the bottom first sample. Specifically, the straight-walled sample is sliced ​​along the longitudinal direction of the quartz crucible to obtain a straight-walled first sample, from which the transparent layer and the non-transparent layer of the quartz crucible can be seen, and then the straight-walled first sample is photographed in all directions, and the photographed images are transmitted to image processing software for analysis, and the image processing software is used to obtain microbubble data of the transparent layer of the straight-walled first sample, wherein the microbubble data includes the size, depth, number, and position of the microbubbles. Similarly, the R-corner sample and the bottom sample were sliced ​​longitudinally along the quartz crucible to obtain the first R-corner sample and the first bottom sample, respectively. Each of these samples was photographed, and then image processing software was used to obtain microbubble data for each. The slice thickness was 1.5-2.5 mm to facilitate accurate microbubble detection within the sample.

[0027] In some embodiments, after step S3, the sample blocks are cleaned and dried. For the case where three sample blocks, namely, a straight-walled sample block, an R-angled sample block, and a bottom sample block, are taken, the straight-walled sample block, the R-angled sample block, and the bottom sample block are pickled respectively to remove impurities such as stains on the surface of the sample blocks, maintain the cleanliness of the sample blocks, and prevent impurities from affecting subsequent experimental results. Among them, the pickling solvent can be any pickling solvent on the market. After cleaning, the straight-walled sample block, the R-angled sample block, and the bottom sample block are placed in a clear environment to dry. The clear environment refers to an enclosed space with clean internal air and no impurities, to prevent other impurities from adhering to the sample blocks during the drying process, and to further maintain the cleanliness of the sample blocks.

[0028] Furthermore, after cleaning and drying, the dried sample needs to be transferred to a high-temperature furnace for heating and calcining, and the calcining conditions are set according to the crystal pulling environment. Specifically, for the case of taking three samples, namely a straight-wall sample, an R-angle sample, and a bottom sample, the cleaned and dried straight-wall sample, the R-angle sample, and the bottom sample are placed in a high-temperature furnace at the same time for heating and calcining. The heating and calcining temperature of the high-temperature furnace is set to 1430-1500°C, which is the temperature of the crystal pulling process, so as to simulate the crystal pulling process; then the high-temperature furnace is adjusted to a vacuum state or different gases (such as argon, nitrogen, etc.) are introduced to simulate the environment in the single crystal furnace during the crystal pulling process; after heating and calcining for 9-11 hours, the high-temperature furnace is stopped from heating, and after the high-temperature furnace is naturally cooled, the straight-wall sample, the R-angle sample, and the bottom sample are taken out to complete the simulated calcination link of the sample.

[0029] Furthermore, in step S6, the calcined sample is sliced ​​again along the longitudinal direction of the quartz crucible to obtain a second sample, and the second sample is photographed to obtain microbubble data of the second sample, which specifically includes the following steps: the calcined straight-wall sample, the R-angled sample, and the bottom sample are sliced ​​again along the longitudinal direction of the quartz crucible to obtain a second straight-wall sample, a second R-angled sample, and a second bottom sample, and the second straight-wall sample, the second R-angled sample, and the second bottom sample are photographed to obtain microbubble data of the second straight-wall sample, the second R-angled sample, and the second bottom sample. Specifically, the calcined straight-wall sample, the R-angled sample, and the bottom sample are sliced, and then the second straight-wall sample, the second R-angled sample, and the second bottom sample are photographed comprehensively using a camera. The photographed images are then transmitted to image processing software for analysis, thereby obtaining microbubble data of the transparent layer of the second straight-wall sample, the microbubble data of the transparent layer of the second R-angled sample, and the microbubble data of the second bottom sample. When sliced ​​longitudinally along the quartz crucible, the first and second samples have the same thickness. Both samples contain a transparent layer and a non-transparent layer. Therefore, the microbubbles in the first and second samples can be assumed to be identical before treatment. Therefore, the only variable is calcination. Therefore, by comparing the microbubble data for the transparent layer of the first sample with the microbubble data for the transparent layer of the second sample, we can determine the changes in microbubbles caused by calcination, thereby simulating the changes in microbubbles in the transparent layer of the quartz crucible during crystal pulling.

[0030] Furthermore, in step S7, performance test results of the batch of quartz crucibles are obtained based on the microbubble data of the first sample and the microbubble data of the second sample. Specifically, the following steps are included: obtaining a first performance test result of the quartz crucible sample based on the microbubble data of the first straight-wall sample and the microbubble data of the second straight-wall sample; obtaining a second performance test result of the quartz crucible sample based on the microbubble data of the first R-angle sample and the microbubble data of the second R-angle sample; obtaining a third performance test result of the quartz crucible sample based on the microbubble data of the first bottom sample and the microbubble data of the second bottom sample; and obtaining the performance test results of the batch of quartz crucibles based on the first, second, and third performance test results of the quartz crucible sample. The quartz crucible samples are tested at the straight wall, R-angle, and bottom positions. To ensure the accuracy and reliability of the test results, if all three performance test results meet the requirements, the quartz crucible sample can be considered to meet the final use requirements.

[0031] In some embodiments, the microbubble data includes the number of microbubbles, the depth of microbubbles, and the size of microbubbles. In step S7, based on the microbubble data of the first sample and the microbubble data of the second sample, a performance test result of the batch of quartz crucibles is obtained, specifically comprising the following steps: determining the microbubble expansion of the second sample based on the microbubble depth and microbubble size of the first sample and the microbubble depth and microbubble size of the second sample; when the microbubble expansion of the second sample is less than a preset expansion, and the number of microbubbles in the second sample is less than a preset number, it indicates that the performance of the batch of quartz crucibles meets the use requirements of quartz crucibles. During the crystal pulling process, microbubbles in the quartz crucible will expand and increase in volume due to heat, causing some bubbles to rupture and release gas and impurities into the silicon melt, disrupting the crystal growth interface and causing the crystal ingot to break. Microbubbles will also migrate toward the inner wall of the crucible, i.e., bubbles in the transparent layer migrate toward the melt, and bubbles in the non-transparent layer migrate toward the transparent layer. This bubble migration accelerates local corrosion of the crucible wall and shortens its service life. Therefore, when obtaining the microbubble data of the first sample and the microbubble data of the second sample, the main focus is on the changes in the expansion degree and number of microbubbles after calcination.

[0032] Specifically, the volume of the microbubbles in the first sample can be determined based on the microbubble depth and size of the first sample. The volume of the microbubbles in the second sample can then be determined based on the microbubble depth and size of the second sample. Dividing the two volumes yields the expansion of the microbubbles in the second sample. When the expansion of the microbubbles in the second sample is greater than a preset expansion, the probability of microbubble fragmentation increases, and more gas and impurities enter the melt, affecting the growth of the crystal ingot. Furthermore, when the number of microbubbles in the second sample is greater than a preset number, it indicates that more bubbles will erode the inner wall of the crucible and enter the melt. Therefore, based on the microbubble data of the first and second samples, the number and expansion of the microbubbles in the second sample can be determined and compared with the preset expansion and number. If the microbubble expansion degree of the second sample is less than a preset expansion degree and the number of microbubbles in the second sample is less than a preset number, it indicates that the performance of the quartz crucible sample meets the use requirements of the quartz crucible. If the microbubble expansion degree of the second sample is greater than the preset expansion degree or the number of microbubbles in the second sample is greater than the preset number, it indicates that the performance of the quartz crucible sample does not meet the use requirements of the quartz crucible. The preset expansion degree is 10-11 times and the preset number is 45-55.

[0033] Furthermore, for quartz crucible samples consisting of a straight-walled sample, an R-angled sample, and a bottom sample, the microbubble expansion degree of the second straight-walled sample, the second R-angled sample, and the second bottom sample must all be less than a preset expansion degree, and the number of microbubbles in the second straight-walled sample, the second R-angled sample, and the second bottom sample must all be less than a preset number, indicating that the performance of the quartz crucible sample meets the use requirements of the quartz crucible. For multiple quartz crucible samples selected from a batch of prepared quartz crucibles, if the performance test results of at least 95% of the multiple quartz crucible samples meet the use requirements of the quartz crucible, it can be determined that the quartz crucibles in that batch meet the use requirements and can be shipped for crystal pulling.

[0034] In summary, the present invention simulates the crystal pulling process and performs performance testing of the quartz crucible in advance, thereby reducing the impact and abnormality rate of the crucible on crystal pulling after use, and can prevent abnormalities that occur after customer use in advance. Therefore, by monitoring the number of microbubbles in the transparent layer of the quartz crucible and the change in expansion, the state of the transparent layer of the crucible after use can be truly inferred. Therefore, the use of this method can timely discover and improve, prevent products with abnormal performance from entering the client, and reduce problems such as crystal pulling failure caused by microbubble problems in the transparent layer. The application of this method can not only predict the service life of the crucible and the qualified rate of crystal pulling, but also reduce the scrap rate caused by microbubble problems in the transparent layer, achieving a dual improvement in production efficiency and product quality, winning high customer trust and market recognition for the company, and further enhancing market competitiveness.

[0035] The above disclosure is only a preferred embodiment of the present invention, and it is certainly not intended to limit the scope of the present invention. A person skilled in the art can understand that all or part of the processes of the above embodiment and equivalent changes made in accordance with the claims of the present invention are still within the scope of the invention.

Claims

1. A quartz crucible performance testing method based on a high-temperature drawing process, characterized in that: The following steps are involved: S1. Selecting a quartz crucible sample from a batch of prepared quartz crucibles; S2. Sampling the quartz crucible sample to obtain a sample to be tested; S3, slicing the sample along the longitudinal direction of the quartz crucible to obtain a first sample, and photographing the first sample to obtain microbubble data of the first sample; S4, cleaning and drying the sliced ​​sample; S5. heating and calcining the dried sample, wherein the parameters of the heating and calcining are designed according to the parameters of the crystal pulling process; S6. Slicing the calcined sample again along the longitudinal direction of the quartz crucible to obtain a second sample, and photographing the second sample to obtain microbubble data of the second sample; S7. Obtain performance test results of the batch of quartz crucibles based on the microbubble data of the first sample and the microbubble data of the second sample.

2. The method for detecting the performance of a quartz crucible based on a high-temperature drawing process according to claim 1, wherein: In step S2, sampling the quartz crucible sample to obtain the sample blocks to be tested specifically includes: sampling from the straight wall, R corner and bottom of the quartz crucible sample respectively to obtain the straight wall sample block, R corner sample block and bottom sample block to be tested.

3. The method for detecting the performance of a quartz crucible based on a high-temperature drawing process according to claim 2, wherein: In step S3, the sample block is sliced ​​along the longitudinal direction of the quartz crucible to obtain a first sample, and the first sample is photographed to obtain microbubble data of the first sample, specifically comprising: slicing the straight-wall sample, the R-angle sample, and the bottom sample along the longitudinal direction of the quartz crucible respectively to obtain a straight-wall first sample, an R-angle first sample, and a bottom first sample, and photographing the straight-wall first sample, the R-angle first sample, and the bottom first sample respectively to obtain microbubble data of the straight-wall first sample, the R-angle first sample, and the bottom first sample.

4. The method for detecting the performance of a quartz crucible based on a high temperature drawing process according to claim 3, wherein: In step S6, the calcined sample is sliced ​​again along the longitudinal direction of the quartz crucible to obtain a second sample, and the second sample is photographed to obtain microbubble data of the second sample, which specifically includes the following steps: the calcined straight-wall sample, R-angle sample and bottom sample are sliced ​​again along the longitudinal direction of the quartz crucible to obtain a straight-wall second sample, R-angle second sample and bottom second sample, and the straight-wall second sample, the R-angle second sample and the bottom second sample are photographed to obtain microbubble data of the straight-wall second sample, the R-angle second sample and the bottom second sample.

5. The method for detecting the performance of a quartz crucible based on a high temperature drawing process according to claim 4, wherein: In step S7, based on the microbubble data of the first sample and the microbubble data of the second sample, the performance test results of the batch of quartz crucibles are obtained, which specifically includes the following steps: Obtaining a first performance test result of the quartz crucible sample based on the microbubble data of the first straight-wall sample and the microbubble data of the second straight-wall sample; Obtaining a second performance test result of the quartz crucible sample based on the microbubble data of the first R-angle sample and the microbubble data of the second R-angle sample; Obtaining a third performance test result of the quartz crucible sample based on the microbubble data of the first bottom sample and the microbubble data of the second bottom sample; Based on the first performance test result, the second performance test result and the third performance test result of the quartz crucible sample, the performance test results of the batch of quartz crucibles are obtained.

6. The method for detecting the performance of a quartz crucible based on a high-temperature drawing process according to any one of claims 1 to 5, characterized in that: The size of the sample block is 45-55mm*45-55mm.

7. The method for detecting the performance of a quartz crucible based on a high temperature drawing process according to claim 6, wherein: The thickness of the slices was 1.5-2.5 mm.

8. The method for detecting the performance of a quartz crucible based on a high temperature drawing process according to any one of claims 1 to 5, characterized in that: In step S5, the heating and calcining temperature is 1430-1500°C.

9. The method for detecting the performance of a quartz crucible based on a high temperature drawing process according to claim 1, wherein: The microbubble data includes the number of microbubbles, the depth of microbubbles, and the size of microbubbles. In step S7, the performance test results of the batch of quartz crucibles are obtained based on the microbubble data of the first sample and the microbubble data of the second sample, which specifically includes the following steps: determining a microbubble expansion degree of the second sample based on the microbubble depth and microbubble size of the first sample and the microbubble depth and microbubble size of the second sample; When the microbubble expansion degree of the second sample is less than the preset expansion degree, and the number of microbubbles in the second sample is less than the preset number, it indicates that the performance of the quartz crucibles in this batch meets the use requirements of the quartz crucibles.

10. The method for detecting the performance of a quartz crucible based on a high temperature drawing process according to claim 9, wherein: The preset expansion degree is 10-11 times, and the preset number is 45-55.

Citation Information

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