Low-power-consumption data storage method and system based on spinning electrons

Abstract

The invention relates to the technical field of data storage, in particular to a low-power-consumption data storage method and system based on spinning electrons. A spin current is generated in the spin-orbit coupling heterojunction through regulation and control of an orthogonal electromagnetic field, and the heterojunction comprises a heavy metal layer and a ferromagnetic layer with perpendicular magnetic anisotropy; a spin current is injected into a memory cell, the memory cell including a ferromagnetic free layer, a topological insulator layer, and a ferromagnetic reference layer. Through joint regulation and control of an orthogonal electromagnetic field of a spin-orbit coupling heterojunction, a non-orthogonal included angle is formed between the polarization direction of spin Hall current and the magnetization direction of a ferromagnetic layer, the conversion efficiency of spin-orbit torque is improved, and meanwhile, the interface spin relaxation time is optimized through a gradient doping technology, so that the spin-orbit torque conversion efficiency is improved. And the spin diffusion length breaks through the physical limit of the traditional heterojunction.

Description

Technical Field

[0001] The present invention relates to the field of data storage technology, and in particular to a low-power data storage method and system based on spin electronics. Background Art

[0002] The core challenge of spintronic memory devices lies in achieving low-power, high-density, and stable magnetization reversal. Traditional approaches rely primarily on the spin-orbit moment (SOT) effect to manipulate the magnetization direction of the ferromagnetic layer, but these approaches face two fundamental bottlenecks: First, the efficiency of spin current generation is limited by the spin Hall angle of the heavy metal layer and interface scattering losses, making it difficult to further reduce the driving current density; second, when multiple memory cells operate in concert, phase detuning and decoherence effects in spin wave propagation significantly reduce the accuracy of parallel writes. More critically, the stability of the magnetization state in existing technologies relies on a non-volatile mechanism based on a single energy barrier, while thermal fluctuations and quantum tunneling are prone to random reversal errors. Especially when memory cell dimensions are scaled down to the nanometer scale, the spin transport anisotropy and uncontrollable dynamic behavior of magnetic domain walls in conventional magnetic tunnel junction (MTJ) structures have become core constraints hindering device performance improvements. Therefore, achieving efficient spin current control, coordinated multi-cell quantum state manipulation, and topologically protected magnetization state locking at the subnanometer scale remains a pressing technical challenge in the field. Summary of the Invention

[0003] The present disclosure proposes a low-power data storage method and system based on spin electronics, aiming to overcome at least one defect in the prior art.

[0004] To achieve the above objectives, the technical solutions disclosed in the present invention are as follows: According to one aspect of the present disclosure, a low-power data storage method based on spin electrons is provided, and the method comprises the following steps: generating a spin current by regulating an orthogonal electromagnetic field in a spin-orbit coupled heterojunction, wherein the heterojunction includes a heavy metal layer and a ferromagnetic layer with perpendicular magnetic anisotropy; injecting the spin current into a storage unit, and inducing magnetization reversal by a spin-momentum locking effect, wherein the storage unit includes a ferromagnetic free layer, a topological insulator layer, and a ferromagnetic reference layer; detecting the magnetization state of the ferromagnetic free layer by an asymmetric double-barrier tunnel junction, and dynamically reconstructing the spin current polarization direction according to the detection result; performing a cooperative operation on the storage array by a spatiotemporally entangled spin wave field, wherein the phase distribution of the spin wave field is constrained by quantum interference conditions; triggering a topological state conversion of a magnetic domain wall in a non-volatile storage stage, and locking the storage state by an antiferromagnetic exchange bias field.

[0005] Furthermore, the steps of generating spin currents in a spin-orbit coupled heterojunction by regulating orthogonal electromagnetic fields include: Applying an alternating electric field parallel to the interface in the heavy metal layer can stimulate a spin Hall current with spatial phase modulation. The magnetization direction of the ferromagnetic layer is pre-aligned by applying a static magnetic field in a vertical direction, so that the spin current polarization direction forms an angle of 45° to 135° with the magnetization direction of the ferromagnetic layer; Gradient doping technology is used to optimize the spin relaxation time at the heterojunction interface, making the spin diffusion length larger than the characteristic size of the memory cell.

[0006] Furthermore, the steps for achieving the spin momentum locking effect include: The joint action equation including spin-orbit torque and magnetic anisotropy is established: , where η is the interface spin conversion efficiency, m is the magnetization vector, is a unit vector pointing in the direction of the z axis, m z 2 is the component of the magnetization vector in the z direction, ∇ is the gradient operator, J s is the spin current density, K u is the perpendicular anisotropy constant, Γ is the topological stability coefficient; Solve the energy extreme point of the joint action equation and determine the boundary between the steady-state solution and the unsteady-state solution of the magnetization vector m; By regulating the spatial gradient of the spin current density, a topologically protected magnetic vortex array is formed in the ferromagnetic free layer.

[0007] Furthermore, the steps of forming the magnetic vortex array include: A periodic groove structure is prepared on the surface of the ferromagnetic free layer, and the groove depth satisfies: , where n is an odd number, λ s is the spin wave wavelength, d is the groove depth; Inhomogeneous DM interaction is induced by spin current density gradient; The chirality distribution of magnetic vortices is monitored in real time by Lorentz microscopy, and the spin current injection mode is adjusted by feedback.

[0008] Furthermore, the steps for constructing the space-time entangled spin wave field include: The storage array is modeled as a two-dimensional quantum Isinger point system, and its Hamiltonian is expressed as: , where J ij is the spin-spin exchange interaction, h x is the transverse quantum tunneling field, h z (t) is the time-dependent longitudinal control field, and are the longitudinal spin projection operators of lattice point i and lattice point j, respectively, is the transverse spin projection operator; The ground-state wave function of the Hamiltonian is solved by the adiabatic evolution algorithm to obtain the optimal distribution of the spin wave phase. A ring boundary condition is applied at the edge of the storage array to make the spin wave field form anyon excited states with fractional statistical characteristics; The adiabatic evolution algorithm includes: Initialize the longitudinal control field h z (0) = 0, the effect of the exchange interaction strength on the transverse quantum tunneling field is ignored; Slowly increase h in the form of exponential decay z (t), when the system evolves to h z (t)≫J ij When the magnetization direction of each lattice point is locked to the target storage state.

[0009] Furthermore, the asymmetric double barrier tunnel junction includes: the first barrier layer is MgO with a thickness of 0.8-1.2nm; the second barrier layer is AlO X , with a thickness of 1.5-2.0nm; a single layer of graphene is inserted between the barrier layers as a quantum well to enhance the anisotropy of the spin-related tunneling probability.

[0010] Furthermore, the steps for implementing the topological state conversion of the magnetic domain wall include: Constructing a gradient magnetic anisotropy distribution in the ferromagnetic free layer; The generation of skyrmion-antiskyrmion pairs at the magnetic domain wall is induced by a current pulse; The principle of topological charge conservation is used to encode the movement path of the magnetic domain wall into binary information.

[0011] Furthermore, the method also includes the following steps: embedding superconducting nanowire single-photon detectors between storage units to monitor quantum fluctuations during magnetization reversal; dynamically optimizing spin current injection parameters based on the statistical characteristics of quantum fluctuations; and triggering an error correction coding mechanism to rewrite data when a macroscopic quantum tunneling event is detected.

[0012] Furthermore, the method also includes the following steps: integrating a plasmon nanoantenna array on the surface of the storage array to enhance the coupling efficiency between the spin wave and the light field; exciting the localized plasmon field through femtosecond laser pulses to achieve spin wave phase control at the subwavelength scale; and verifying the fidelity of the spin wave entangled state using quantum correlation measurement technology.

[0013] According to another aspect of the present disclosure, a low-power data storage system based on spintronics is provided, for implementing the above low-power data storage method based on spintronics, the data storage system comprising: a spin current generation module, comprising a heavy metal layer, a ferromagnetic heterojunction, and an orthogonal electromagnetic field application device, for generating a spatially modulated spin-polarized current; A memory cell array comprising a plurality of memory cells, wherein the memory cells comprise a ferromagnetic free layer, a topological insulator layer, and a ferromagnetic reference layer, wherein the topological insulator layer induces a topologically protected spin transport channel; Quantum state detection module, integrating an asymmetric double-barrier tunnel junction and a superconducting quantum interference device to read the magnetization state; a collaborative operation controller configured to generate a spatiotemporally entangled spin wave field to synchronously control multiple memory cells through quantum interference effects; A topological locking device includes an antiferromagnetic exchange bias layer and a current driving circuit, which is used to lock the magnetization state to the topological configuration with the lowest energy.

[0014] The beneficial effects of the present invention are: The present invention uses the orthogonal electromagnetic fields of a spin-orbit coupled heterojunction to jointly control the polarization direction of the spin Hall current and the magnetization direction of the ferromagnetic layer, forming a non-orthogonal angle, thereby enhancing the conversion efficiency of spin-orbit torque. At the same time, the interface spin relaxation time is optimized through gradient doping technology, which allows the spin diffusion length to break through the physical limits of traditional heterojunctions. A topological insulator layer is introduced as a spin transport channel, and its topologically protected surface state is used to suppress bulk scattering loss. Combined with the quantum well structure of an asymmetric double-barrier tunnel junction, a strong anisotropy of the spin-dependent tunneling probability is achieved, thereby improving the detection sensitivity of the magnetization state to the level of a single magnetic domain. The construction of a spatiotemporal entangled spin wave field uses the adiabatic evolution algorithm of the quantum Ising model to transform the operation of multiple storage cells into the phase control problem of the ground state wave function. The non-local characteristics of fractional statistical anyons are used to overcome the phase detuning defects of traditional spin wave interference, achieving parallel writing with sub-nanosecond precision. The magnetic domain wall topological state conversion mechanism encodes information through the topological charge conservation properties of skyrmion-antiskyrmion pairs, and combines the pinning effect of the antiferromagnetic exchange bias field to increase the energy barrier height of the storage state by an order of magnitude, fundamentally suppressing thermally induced flipping and quantum tunneling noise.

[0015] The above description is only an overview of the technical solution of the present invention. In order to more clearly understand the technical means of the present invention and implement it according to the contents of the specification, the following is a detailed description of the preferred embodiments of the present invention with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 Flowchart of a low-power data storage method based on spintronics in one embodiment of the present invention; Figure 2 Schematic diagram of the spatial modulation of the spin current density and the phase distribution of the spin polarization direction in one embodiment of the present invention; Figure 3Schematic diagram of the chirality distribution of magnetic vortices in one embodiment of the present invention; Figure 4 Schematic diagram of spin wave entanglement phase distribution in one embodiment of the present invention; Figure 5 Schematic diagram of skyrmion topological charge distribution in one embodiment of the present invention; Figure 6 Schematic diagram of asymmetric barrier tunneling characteristics in one embodiment of the present invention; Figure 7 Schematic diagram of magnetic anisotropy gradient distribution in one embodiment of the present invention. DETAILED DESCRIPTION

[0017] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. All other embodiments obtained by ordinary technicians in this field based on the embodiments of the present invention without making any creative efforts shall fall within the scope of protection of the present invention.

[0018] The term "comprise" and any variations thereof in the specification and claims of this application are intended to cover non-exclusive inclusions. For example, a process, method, system, product, or apparatus that includes a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units that are not explicitly listed or are inherent to these processes, methods, products, or apparatuses. In addition, the use of "and / or" in the specification and claims to indicate at least one of the connected objects, such as A and / or B, means that A alone, B alone, and both A and B are included.

[0019] In the embodiments of the present invention, words such as "exemplary" or "for example" are used to indicate examples, illustrations, or descriptions. Any embodiment or design described as "exemplary" or "for example" in the embodiments of the present invention should not be construed as being preferred or advantageous over other embodiments or designs. Rather, the use of words such as "exemplary" or "for example" is intended to present the relevant concepts in a concrete manner.

[0020] The present invention provides the following preferred embodiments.

[0021] Example 1 In order to solve the technical problems of existing spintronic memory devices in terms of low power consumption and high-density storage, this embodiment proposes a low-power data storage method based on spintronics. Specifically, this embodiment generates spin currents by regulating and generating spin currents in a spin-orbit coupled heterojunction using orthogonal electromagnetic fields, and injects the spin currents into a storage unit with a specific structure, thereby achieving efficient magnetization reversal and non-volatile storage. Figure 1As shown, the process of the low-power data storage method based on spin electronics is as follows: S100. Generate a spin current in a spin-orbit coupled heterojunction by regulating an orthogonal electromagnetic field, wherein the heterojunction includes a heavy metal layer and a ferromagnetic layer with perpendicular magnetic anisotropy.

[0022] S200, injecting a spin current into a storage unit to induce magnetization reversal through a spin momentum locking effect, wherein the storage unit includes a ferromagnetic free layer, a topological insulator layer, and a ferromagnetic reference layer.

[0023] S300, detecting the magnetization state of the ferromagnetic free layer through an asymmetric double-barrier tunnel junction, and dynamically reconstructing the spin current polarization direction according to the detection result.

[0024] S400, performing collaborative operations on the storage array through a spatiotemporal entangled spin wave field, wherein the phase distribution of the spin wave field is constrained by quantum interference conditions.

[0025] S500 , triggering a magnetic domain wall topological state conversion in a non-volatile storage stage, and locking the storage state using an antiferromagnetic exchange bias field.

[0026] In a spin-orbit coupled heterojunction, spin currents are generated by applying orthogonal electromagnetic fields. The heterojunction consists of a heavy metal layer and a ferromagnetic layer with perpendicular magnetic anisotropy. An alternating electric field parallel to the interface is applied in the heavy metal layer to excite a spin Hall current with spatial phase modulation. At the same time, the magnetization direction of the ferromagnetic layer is pre-aligned by a static magnetic field in a perpendicular direction, so that the polarization direction of the spin current forms an angle of 45° to 135° with the magnetization direction of the ferromagnetic layer. This design can significantly enhance the conversion efficiency of the spin current and improve the injection efficiency and stability of the spin current. It should be understood that by controlling the angle between the polarization direction of the spin current and the magnetization direction of the ferromagnetic layer, the magnitude of the spin-orbit torque can be effectively adjusted, thereby achieving more efficient magnetization reversal.

[0027] The generated spin current is then injected into a memory cell. The memory cell comprises a ferromagnetic free layer, a topological insulator layer, and a ferromagnetic reference layer. The topological insulator layer acts as a spin transport channel, inducing a topologically protected spin transport path, thereby suppressing scattering losses during spin current transmission. Through the spin-momentum locking effect, the spin current induces magnetization reversal in the ferromagnetic free layer. This spin-momentum locking effect is achieved through the combined action of spin-orbit torque and magnetic anisotropy.

[0028] Furthermore, the magnetization state of the ferromagnetic free layer is detected using an asymmetric double-barrier tunnel junction. Based on the detection results, the spin current polarization direction is dynamically reconstructed to achieve precise magnetization control. The design of the asymmetric double-barrier tunnel junction improves the sensitivity of magnetization state detection and ensures the accuracy of the detection results. It is important to understand that by dynamically reconstructing the spin current polarization direction, the spin current injection pattern can be adjusted according to the detection results, thereby achieving more precise magnetization control.

[0029] Furthermore, the storage array is coordinated through the use of a spatiotemporally entangled spin wave field. The phase distribution of the spin wave field is constrained by quantum interference conditions. This design enables the simultaneous operation of multiple storage cells, improving the parallelism and accuracy of data writing. By establishing appropriate quantum interference conditions, the phase distribution of the spin wave field can be ensured to meet the operational requirements of the storage array. It can be understood that the coordinated operation of the spatiotemporally entangled spin wave field can achieve simultaneous operation of multiple storage cells, improving the overall performance of the storage system.

[0030] Finally, in the non-volatile storage stage, a topological state transition of the magnetic domain wall is triggered, and the storage state is locked using an antiferromagnetic exchange bias field. By constructing a gradient-varying magnetic anisotropy distribution, the generation of skyrmion-antiskyrmion pairs at the magnetic domain wall can be induced. The antiferromagnetic exchange bias field is used to lock the magnetization state to the topological configuration with the lowest energy, thereby achieving stable non-volatile storage. It should be understood that by triggering the topological state transition of the magnetic domain wall, high-density data storage can be achieved, while the antiferromagnetic exchange bias field ensures the long-term stability of the storage state.

[0031] This embodiment achieves efficient and stable magnetization reversal and magnetization state detection. Furthermore, through the spatiotemporal entangled spin wave field and magnetic domain wall topological state conversion mechanism, the parallel operation capability of the storage array and the stability of data storage are improved. These technical measures work together to increase storage density and reduce single-write energy consumption, thereby achieving low-power and high-density data storage.

[0032] Example 2 To address the issues of spin current generation and injection efficiency, this embodiment further optimizes the steps of generating spin currents through orthogonal electromagnetic field control in a spin-orbit coupled heterojunction. Specifically, this embodiment applies an alternating electric field parallel to the interface in the heavy metal layer to excite a spin Hall current with spatial phase modulation, and pre-aligns the magnetization direction of the ferromagnetic layer through a perpendicular static magnetic field, so that the spin current polarization direction forms an angle of 45° to 135° with the magnetization direction of the ferromagnetic layer. In addition, a gradient doping technique is used to optimize the spin relaxation time at the heterojunction interface, making the spin diffusion length greater than the characteristic size of the storage cell.

[0033] First, an alternating electric field parallel to the interface is applied in the heavy metal layer. Figure 2 As shown in Figure 1, the frequency and amplitude of the alternating electric field are optimized to stimulate a spin Hall current with spatial phase modulation. This spatial phase modulation of the spin Hall current can be achieved by adjusting the parameters of the alternating electric field, thereby improving the conversion efficiency of the spin current. It is important to understand that the selection of the frequency and amplitude of the alternating electric field is crucial for the generation of the spin Hall current; appropriate parameters can significantly enhance the intensity and stability of the spin current.

[0034] Furthermore, the magnetization direction of the ferromagnetic layer is pre-aligned by a static magnetic field in a vertical direction. Figure 2 As shown in the figure, the direction and intensity of the static magnetic field are precisely controlled so that the spin current polarization direction forms an angle of 45° to 135° with the magnetization direction of the ferromagnetic layer. This angle is selected to maximize the effect of the spin-orbit torque, thereby more effectively inducing magnetization reversal. It can be understood that by adjusting the intensity and direction of the static magnetic field, the polarization direction of the spin current can be precisely controlled, thereby improving the efficiency and controllability of magnetization reversal.

[0035] Furthermore, gradient doping technology is used to optimize the spin relaxation time at the heterojunction interface. By introducing gradient doping at the interface between the heavy metal layer and the ferromagnetic layer, the spin relaxation time can be effectively prolonged, thereby making the spin diffusion length larger than the characteristic size of the storage unit. The specific method of gradient doping includes gradually increasing or decreasing the doping concentration at the interface to form a smooth doping gradient. This design can suppress the scattering loss of the spin current during transmission and improve the injection efficiency of the spin current. It should be understood that the selection and implementation of the gradient doping technology have an important influence on the spin relaxation time and the spin diffusion length. A reasonable gradient distribution can significantly improve the transmission performance of the spin current.

[0036] This embodiment achieves efficient and stable spin current generation and injection. By optimizing the parameters of the alternating electric and static magnetic fields and employing gradient doping techniques, the conversion efficiency and transmission performance of the spin current are improved. These combined technologies enable spintronic memory devices to excel in low power consumption and high-density storage.

[0037] Example 3 To address the implementation issues of the spin-momentum locking effect, this embodiment further refines the steps for implementing the spin-momentum locking effect. Specifically, this embodiment establishes an equation for the combined action of spin-orbit torque and magnetic anisotropy and solves the energy extreme points of this equation to determine the boundary between the steady-state solution and the unsteady-state solution of the magnetization vector. Furthermore, by regulating the spatial gradient of the spin current density, a topologically protected magnetic vortex array is formed in the ferromagnetic free layer.

[0038] First, the joint action equation including spin-orbit torque and magnetic anisotropy is established: , where η is the interface spin conversion efficiency, J s is the spin current density, K u is the perpendicular anisotropy constant, Γ is the topological stability coefficient, Represents a unit vector, usually pointing in the direction of the z axis, m z 2 represents the z-direction component of the magnetization vector, and ▽ represents the gradient operator. By solving this equation for the energy extremes, we can determine the boundary between the steady-state solution and the unsteady-state solution for the magnetization vector m. This design ensures the stability and controllability of magnetization reversal.

[0039] Furthermore, the energy extreme points of the combined action equation are solved to determine the boundary between the steady-state solution and the unsteady-state solution of the magnetization vector m. Solving this equation using numerical simulations yields steady-state and unsteady-state solutions for the magnetization vector m under various conditions. These solutions describe the behavior of the magnetization vector under varying spin current densities and external magnetic fields. It can be understood that by solving the energy extreme points, the stable state of the magnetization vector can be determined, thus guiding parameter selection in practical operations.

[0040] Furthermore, by regulating the spatial gradient of the spin current density, a topologically protected magnetic vortex array is formed in the ferromagnetic free layer. By introducing a spatial gradient of the spin current density in the ferromagnetic free layer, a non-uniform magnetic vortex structure can be induced. This non-uniform structure is topologically protected and has high stability. It should be understood that the spatial gradient of the spin current density can be achieved through micro-nanofabrication technologies, such as changing the distribution of the spin current density through local heating or local electric field manipulation.

[0041] This embodiment achieves efficient spin-momentum locking and forms a topologically protected magnetic vortex array in the ferromagnetic free layer. These technologies work together to make the magnetization reversal process more stable and controllable, thereby improving the performance of the memory device.

[0042] Example 4 To address the formation issues of magnetic vortex arrays, this embodiment further optimizes the formation steps of the magnetic vortex array. Specifically, this embodiment fabricates a periodic groove structure on the surface of the ferromagnetic free layer and utilizes a spin current density gradient to induce an inhomogeneous DM interaction. The chirality distribution of the magnetic vortex is monitored in real time using a Lorentz microscope, and feedback is used to adjust the spin current injection pattern.

[0043] First, a periodic groove structure is prepared on the surface of the ferromagnetic free layer. The groove depth satisfies: , where n is an odd number, λ sis the spin wave wavelength, and d is the groove depth. This periodic groove structure guides the propagation path of the spin wave, thereby forming an orderly array of magnetic vortices. It is important to understand that the choice of groove depth has a significant impact on the propagation characteristics of the spin wave. The appropriate depth ensures that the spin wave propagation path meets the desired requirements.

[0044] Furthermore, the spin current density gradient is used to induce non-uniform DM interaction. By introducing a spatial gradient of spin current density in the ferromagnetic free layer, a non-uniform DM interaction (Dzyaloshinskii-Moriya interaction) can be induced. This non-uniform DM interaction can cause the chirality distribution of magnetic vortices to change, thereby forming an ordered magnetic vortex array, such as Figure 3 It is understood that the spatial gradient of the spin current density can be achieved through micro-nano processing technology, such as changing the distribution of the spin current density through local heating or local electric field regulation.

[0045] Furthermore, the chirality distribution of the magnetic vortex is monitored in real time by a Lorentz microscope, and the spin current injection mode is adjusted by feedback. Figure 3 As shown, the Lorentz microscope can monitor the chirality distribution of magnetic vortices in real time and feed the monitoring results back to the control system, thereby dynamically adjusting the injection pattern of the spin current. This feedback mechanism ensures a more stable and controllable formation process of the magnetic vortex array. It is important to understand that the resolution and sensitivity of the Lorentz microscope have a significant impact on the accuracy of the monitoring results. A microscope with high resolution and high sensitivity can provide more precise feedback information.

[0046] This embodiment achieves the formation of an ordered magnetic vortex array. The stability and controllability of the magnetic vortex array are ensured through the periodic groove structure, spin current density gradient, and real-time monitoring and feedback of the Lorentz microscope.

[0047] Example 5 In order to solve the problem of constructing a space-time entangled spin wave field, this embodiment further optimizes the construction steps of the space-time entangled spin wave field. Specifically, this embodiment models the storage array as a two-dimensional quantum Isinger point system and solves the ground state wave function of the Hamiltonian through the adiabatic evolution algorithm to obtain the optimal distribution of the spin wave phase, such as Figure 4 In addition, an annular boundary condition is imposed on the edge of the storage array, which makes the spin wave field form anyon excited states with fractional statistical characteristics.

[0048] First, the storage array is modeled as a two-dimensional quantum Ising lattice point system, whose Hamiltonian is expressed as: , where J ij is the spin-spin exchange interaction, h x is the transverse quantum tunneling field, hz (t) is the time-dependent longitudinal control field, and are the longitudinal spin projection operators of lattice point i and lattice point j, respectively, used to describe the Isinger interaction between adjacent lattice points. is the transverse spin projection operator, which is used to introduce the quantum tunneling effect. It should be understood that represents the sum of all adjacent grid points, The selection and setting of these parameters have an important influence on the dynamic behavior of the system.

[0049] Furthermore, the ground state wave function of the Hamiltonian is solved by the adiabatic evolution algorithm to obtain the optimal distribution of the spin wave phase. The adiabatic evolution algorithm includes initializing the longitudinal control field h z (0) = 0, transverse field h x It is much larger than the exchange interaction strength, so the effect of the exchange interaction strength on the transverse quantum tunneling field can be ignored. Then, h is slowly enhanced in the form of exponential decay. z (t), when the system evolves to h z (t)≫J ij , the magnetization direction of each lattice point is locked to the target storage state. This adiabatic evolution process ensures a smooth transition from the initial state to the final state, thereby obtaining the optimal distribution of spin wave phases. It is understandable that the key to the adiabatic evolution algorithm lies in the slowly varying control field to avoid non-adiabatic transitions in the system.

[0050] Furthermore, an annular boundary condition is imposed on the edge of the storage array to make the spin wave field form anyon excited states with fractional statistical characteristics. Figure 4 As shown, the ring boundary condition can induce the spin wave field to form a closed topological structure at the edge of the storage array. This topological structure has fractional statistical properties, which can resist local perturbations, thereby improving the stability of the storage state. It is important to understand that the design of the ring boundary condition has a significant impact on the topological properties of the spin wave field. Reasonable boundary conditions can ensure the topological protection of the spin wave field.

[0051] This embodiment achieves the construction of a spatiotemporally entangled spin wave field. By modeling a two-dimensional quantum Isinger point system, solving the adiabatic evolution algorithm, and applying annular boundary conditions, the optimal distribution of the spin wave phase and the stability of the storage state are ensured.

[0052] Example 6 To address the anisotropy of spin-dependent tunneling probability, this embodiment further optimizes the design of an asymmetric double-barrier tunnel junction. Specifically, this embodiment enhances the anisotropy of spin-dependent tunneling probability by using first and second barrier layers of specific thicknesses and inserting a single layer of graphene between the barrier layers as a quantum well.

[0053] First, the first barrier layer is made of MgO material with a thickness of 0.8-1.2nm. It can be understood that MgO has a high dielectric constant and good lattice matching, which can effectively isolate the ferromagnetic free layer and the ferromagnetic reference layer and reduce the direct tunneling effect, such as Figure 6 It is important to understand that the thickness of MgO has a significant impact on the tunneling probability, and a suitable thickness can ensure that the probability of spin-dependent tunneling is maximized.

[0054] Furthermore, the second barrier layer is made of AlO X material, with a thickness of 1.5-2.0nm. That is, AlO X It has high insulation and low tunneling resistance, and can provide a stable tunneling path while maintaining high insulation. This design can further enhance the anisotropy of spin-related tunneling probability. It is understandable that AlO X The thickness selection has an important influence on the stability of the tunneling path. Reasonable thickness can ensure the stability and controllability of the tunneling path.

[0055] Furthermore, a single layer of graphene is inserted between the first and second barrier layers as a quantum well. Single-layer graphene has excellent electron transport properties and a highly tunable band structure, significantly enhancing the anisotropy of the spin-dependent tunneling probability. By adjusting the number of graphene layers and the doping concentration, the characteristics of the tunneling path can be further optimized. It is important to understand that the introduction of graphene not only enhances the anisotropy of the tunneling probability but also improves the spin coherence during the tunneling process.

[0056] Through this embodiment, efficient anisotropy of spin-dependent tunneling probability is achieved. X The thickness of the nanostructured layer and the introduction of single-layer graphene improve the stability and controllability of the tunneling path, thereby enhancing the probability of spin-dependent tunneling.

[0057] Example 7 To address the issue of domain wall topological state conversion, this embodiment further refines the steps for implementing this process. Specifically, this embodiment constructs a gradient magnetic anisotropy distribution in the ferromagnetic free layer, uses current pulses to induce the generation of skyrmion-antiskyrmion pairs in the domain wall, and uses the principle of topological charge conservation to encode the domain wall motion path into binary information.

[0058] First, a gradient magnetic anisotropy distribution is constructed in the ferromagnetic free layer. Figure 7As shown in Figure 1, a gradient magnetic anisotropy distribution is introduced into the ferromagnetic free layer through micro-nanofabrication techniques. This gradient distribution can be achieved through methods such as localized heating or ion implantation, thereby forming regions with different magnetic anisotropies. It is important to understand that the gradient magnetic anisotropy distribution has a significant impact on the motion path of the magnetic domain walls. A reasonable gradient distribution can guide the orderly motion of the magnetic domain walls.

[0059] Furthermore, a current pulse is used to induce the generation of skyrmion-antiskyrmion pairs at the magnetic domain wall. Figure 5 As shown in Figure 1, skyrmion-antiskyrmion pairs can be induced in the ferromagnetic free layer by applying a current pulse. The intensity and duration of this current pulse are precisely controlled to ensure the generation of skyrmion-antiskyrmion pairs. It is understood that the parameters of the current pulse have a significant impact on the efficiency of skyrmion-antiskyrmion pair generation, and appropriate parameters can significantly improve the generation efficiency.

[0060] Furthermore, the topological charge conservation principle is used to encode the domain wall motion path into binary information. Figure 5 As shown in Figure 1, by monitoring the motion paths of skyrmion-antiskyrmion pairs, they can be encoded into binary information. The principle of topological charge conservation ensures that the motion paths of skyrmion-antiskyrmion pairs are highly stable and predictable, thereby ensuring the accuracy of information encoding. It is important to understand that the application of the principle of topological charge conservation makes the motion paths of magnetic domain walls highly topologically protected, thereby improving the reliability and stability of information encoding.

[0061] This embodiment achieves efficient topological state conversion of magnetic domain walls. By constructing a gradient-varying magnetic anisotropy distribution, inducing the generation of skyrmion-antiskyrmion pairs through current pulses, and applying the principle of topological charge conservation, the highly stable and predictable motion path of the magnetic domain walls is ensured.

[0062] Example 8 To address quantum fluctuations during magnetization reversal, this embodiment further optimizes the method for monitoring and dynamically optimizing spin injection parameters. Specifically, this embodiment embeds superconducting nanowire single-photon detectors between storage cells to monitor quantum fluctuations during magnetization reversal and dynamically optimizes spin injection parameters based on the statistical properties of quantum fluctuations. When a macroscopic quantum tunneling event is detected, an error correction mechanism is triggered to rewrite the data.

[0063] First, superconducting nanowire single-photon detectors are embedded between the storage cells. These detectors possess extremely high sensitivity and response speed, enabling real-time monitoring of quantum fluctuations during magnetization reversal. It is important to understand that the selection and layout of these detectors significantly influences the accuracy of the monitoring results; highly sensitive and fast-responding detectors provide more precise monitoring data.

[0064] Furthermore, the spin current injection parameters are dynamically optimized based on the statistical properties of quantum fluctuations. By analyzing data collected by superconducting nanowire single-photon detectors, the statistical properties of quantum fluctuations can be obtained. Based on these statistical properties, the spin current injection parameters, such as the spin current density and injection direction, can be dynamically adjusted to optimize the magnetization reversal process. It is understood that dynamically optimizing the spin current injection parameters can significantly improve the stability and controllability of magnetization reversal.

[0065] Furthermore, when a macroscopic quantum tunneling event is detected, an error correction coding mechanism is triggered to rewrite the data. By setting a threshold, when a macroscopic quantum tunneling event is detected, the system automatically triggers the error correction coding mechanism and rewrites the data to correct any errors. This error correction mechanism ensures data integrity and reliability. It is important to understand that the selection and implementation of the error correction coding mechanism has a significant impact on the success rate of data recovery, and an efficient error correction mechanism can improve the success rate of data recovery.

[0066] This embodiment effectively monitors and dynamically optimizes quantum fluctuations during magnetization reversal. By embedding superconducting nanowire single-photon detectors, dynamically optimizing spin injection parameters, and triggering error correction coding mechanisms, the stability and reliability of the data writing process are ensured.

[0067] Embodiment 9 To address the issue of spin-wave coupling efficiency with optical fields, this embodiment further optimizes the method of integrating a plasmonic nanoantenna array on the surface of a storage array. Specifically, this embodiment enhances the coupling efficiency between spin waves and optical fields by integrating a plasmonic nanoantenna array. Furthermore, femtosecond laser pulses are used to excite the localized plasmon field, enabling subwavelength-scale spin-wave phase control. Quantum correlation measurement technology is then used to verify the fidelity of the spin-wave entangled state.

[0068] First, a plasmonic nanoantenna array is integrated onto the surface of the storage array. Comprised of metallic nanostructures, plasmonic nanoantenna arrays can enhance the localization of light fields at subwavelength scales. This design significantly improves the coupling efficiency between spin waves and light fields. It is important to understand that the design and layout of the plasmonic nanoantenna array significantly influence the coupling efficiency; a proper layout ensures efficient coupling.

[0069] Furthermore, femtosecond laser pulses are used to excite localized plasmon fields. Femtosecond laser pulses, with their extremely short pulse width and high energy density, can efficiently excite localized plasmon fields. This localized field can achieve subwavelength-scale spin-wave phase control. It is understood that the parameters of the femtosecond laser pulse have a significant impact on the excitation effect of the localized field; appropriate parameters can significantly improve the intensity and stability of the localized field.

[0070] Furthermore, the fidelity of the spin-wave entangled state is verified using quantum correlation measurement technology. This technique allows for real-time monitoring of the fidelity of the spin-wave entangled state. This measurement technique provides highly precise fidelity data, ensuring the stability and reliability of the spin-wave entangled state. It is important to understand that the selection and implementation of the quantum correlation measurement technique significantly influences the accuracy of the fidelity measurement, and efficient measurement techniques can significantly improve the accuracy of fidelity measurements.

[0071] This embodiment achieves efficient coupling of spin waves and optical fields, and precise control of the spin wave phase at the subwavelength scale. By integrating plasmonic nanoantenna arrays, exciting localized fields with femtosecond laser pulses, and applying quantum correlation measurement techniques, the high fidelity of the spin-wave entangled state is ensured. These technologies work together to enable higher precision and reliability in data writing and reading.

[0072] Example 10 To address the overall performance challenges of a spintronic low-power data storage system, this embodiment further optimizes the various modules of this system. Specifically, this embodiment achieves efficient and reliable low-power data storage by designing a spin current generation module, a storage cell array, a quantum state detection module, a coordinated operation controller, and a topological locking device.

[0073] First, the spin current generation module includes a heavy metal layer, a ferromagnetic heterojunction, and an orthogonal electromagnetic field application device. By applying an alternating electric field parallel to the interface in the heavy metal layer, a spin Hall current with spatial phase modulation is excited. Simultaneously, a perpendicular static magnetic field is used to pre-align the magnetization direction of the ferromagnetic layer, so that the spin current polarization direction forms an angle of 45° to 135° with the magnetization direction of the ferromagnetic layer. This design can significantly enhance the conversion efficiency of the spin current and improve the injection efficiency and stability of the spin current. It is important to understand that the design of the spin current generation module has a significant impact on the performance of the entire system, and the appropriate parameter selection can significantly improve the efficiency of spin current generation.

[0074] Furthermore, the memory cell array includes multiple memory cells, each of which comprises a ferromagnetic free layer, a topological insulator layer, and a ferromagnetic reference layer. The topological insulator layer acts as a spin transport channel, inducing a topologically protected spin transport path, thereby suppressing scattering losses during spin current transmission. This design ensures efficient transmission of spin current within the memory cell.

[0075] Furthermore, the quantum state detection module integrates an asymmetric double-barrier tunnel junction and a superconducting quantum interference device (SQID). The asymmetric double-barrier tunnel junction consists of a first barrier layer and a second barrier layer, with a single layer of graphene inserted between the two layers as a quantum well. This structure enhances the anisotropy of the spin-dependent tunneling probability and improves the sensitivity of magnetization state detection. The SQID is used to read the magnetization state with high precision. It is important to understand that the design of the quantum state detection module has a significant impact on the accuracy and reliability of data reading. An efficient detection module can significantly improve reading accuracy.

[0076] Furthermore, the cooperative operation controller is configured to generate a spatiotemporally entangled spin wave field. By establishing appropriate quantum interference conditions, the phase distribution of the spin wave field can be ensured to meet the operational requirements of the storage array. This design enables the synchronous operation of multiple storage cells, improving the parallelism and accuracy of data writing. It is understandable that the design of the cooperative operation controller has a significant impact on the efficiency and reliability of data writing, and a reasonable controller design can significantly improve write performance.

[0077] Furthermore, the topological locking device includes an antiferromagnetic exchange bias layer and a current drive circuit. By constructing a gradient-varying magnetic anisotropy distribution, the generation of skyrmion-antiskyrmion pairs at the magnetic domain wall can be induced. The antiferromagnetic exchange bias field is used to lock the magnetization state to the lowest-energy topological configuration, thereby achieving stable non-volatile storage. It is important to understand that the design of the topological locking device has a significant impact on the long-term stability of data storage, and a reasonable locking mechanism can significantly improve the stability of the storage state.

[0078] This embodiment achieves an efficient and reliable low-power data storage system. By optimizing the spin current generation module, storage cell array, quantum state detection module, coordinated operation controller, and topological locking device, high-density, high-precision, and high-stability data storage is ensured.

[0079] Although the present invention has been described above in detail with reference to its preferred embodiments, it is to be understood that the present invention is not limited to the embodiments described above. Instead, various modifications and changes may be made by those skilled in the art without departing from the spirit of the invention, and these modifications and changes should fall within the scope defined by the appended claims and their equivalents.

Claims

1. A low-power data storage method based on spintronics, characterized in that: The method comprises the following steps: generating a spin current in a spin-orbit coupled heterojunction by regulating an orthogonal electromagnetic field, wherein the heterojunction comprises a heavy metal layer and a ferromagnetic layer with perpendicular magnetic anisotropy; injecting the spin current into a storage unit to induce magnetization reversal through a spin-momentum locking effect, wherein the storage unit comprises a ferromagnetic free layer, a topological insulator layer, and a ferromagnetic reference layer; detecting the magnetization state of the ferromagnetic free layer through an asymmetric double-barrier tunnel junction, and dynamically reconstructing the spin current polarization direction based on the detection result; performing cooperative operation on the storage array through a spatiotemporally entangled spin wave field, wherein the phase distribution of the spin wave field is constrained by quantum interference conditions; triggering a magnetic domain wall topological state conversion in a non-volatile storage stage, and locking the storage state using an antiferromagnetic exchange bias field.

2. The low-power data storage method based on spintronics according to claim 1, characterized in that: The step of generating a spin current in a spin-orbit coupled heterojunction by regulating an orthogonal electromagnetic field comprises: Applying an alternating electric field parallel to the interface in the heavy metal layer can stimulate a spin Hall current with spatial phase modulation. The magnetization direction of the ferromagnetic layer is pre-aligned by applying a static magnetic field in a vertical direction, so that the spin current polarization direction forms an angle of 45° to 135° with the magnetization direction of the ferromagnetic layer; The gradient doping technology is used to optimize the spin relaxation time at the heterojunction interface, so that the spin diffusion length is greater than the characteristic size of the storage unit.

3. The low-power data storage method based on spintronics according to claim 1, characterized in that: The steps for achieving the spin momentum locking effect include: The joint action equation including spin-orbit torque and magnetic anisotropy is established: , where η is the interface spin conversion efficiency, m is the magnetization vector, is a unit vector pointing in the direction of the z axis, m z 2 is the component of the magnetization vector in the z direction, ∇ is the gradient operator, J s is the spin current density, K u is the perpendicular anisotropy constant, Γ is the topological stability coefficient; Solving the energy extreme point of the joint action equation and determining the boundary between the steady-state solution and the unsteady-state solution of the magnetization vector m; By regulating the spatial gradient of the spin current density, a topologically protected magnetic vortex array is formed in the ferromagnetic free layer.

4. The low-power data storage method based on spintronics according to claim 3, characterized in that: The steps of forming the magnetic vortex array include: A periodic groove structure is prepared on the surface of the ferromagnetic free layer, and the groove depth satisfies: , where n is an odd number, λ s is the spin wave wavelength, d is the groove depth; Inhomogeneous DM interaction is induced by spin current density gradient; The chirality distribution of magnetic vortices is monitored in real time by Lorentz microscopy, and the spin current injection mode is adjusted by feedback.

5. The low-power data storage method based on spintronics according to claim 1, wherein: The steps of constructing the space-time entangled spin wave field include: The storage array is modeled as a two-dimensional quantum Isinger point system, and its Hamiltonian is expressed as: , where J ij is the spin-spin exchange interaction, h x is the transverse quantum tunneling field, h z (t) is the time-dependent longitudinal control field, and are the longitudinal spin projection operators of lattice point i and lattice point j, respectively, is the transverse spin projection operator; Solving the ground state wave function of the Hamiltonian by an adiabatic evolution algorithm to obtain the optimal distribution of the spin wave phase; A ring boundary condition is applied at the edge of the storage array to make the spin wave field form anyon excited states with fractional statistical characteristics; The adiabatic evolution algorithm includes: Initialize the longitudinal control field h z (0) = 0, the effect of the exchange interaction strength on the transverse quantum tunneling field is ignored; Slowly increase h in the form of exponential decay z (t), when the system evolves to h z (t)≫J ij When the magnetization direction of each lattice point is locked to the target storage state.

6. The low-power data storage method based on spintronics according to claim 5, characterized in that: The asymmetric double barrier tunnel junction includes: a first barrier layer of MgO with a thickness of 0.8-1.2 nm; a second barrier layer of AlO X , with a thickness of 1.5-2.0nm; a single layer of graphene is inserted between the barrier layers as a quantum well to enhance the anisotropy of the spin-related tunneling probability.

7. The low-power data storage method based on spintronics according to claim 6, characterized in that: The steps for implementing the magnetic domain wall topological state conversion include: Constructing a gradient magnetic anisotropy distribution in the ferromagnetic free layer; The generation of skyrmion-antiskyrmion pairs at the magnetic domain wall is induced by a current pulse; The principle of topological charge conservation is used to encode the movement path of the magnetic domain wall into binary information.

8. The low-power data storage method based on spintronics according to claim 1, wherein: The method also includes the following steps: embedding superconducting nanowire single-photon detectors between storage cells to monitor quantum fluctuations during magnetization reversal; dynamically optimizing spin current injection parameters based on the statistical characteristics of quantum fluctuations; and triggering an error correction coding mechanism to rewrite data when a macroscopic quantum tunneling event is detected.

9. The low-power data storage method based on spintronics according to claim 1, wherein: The method also includes the steps of: integrating a plasmon nanoantenna array on the surface of the storage array to improve the coupling efficiency of the spin wave and the light field; exciting the localized plasmon field with femtosecond laser pulses to achieve spin wave phase control at the subwavelength scale; and verifying the fidelity of the spin wave entangled state using quantum correlation measurement technology.

10. A low-power data storage system based on spintronics, used to implement the low-power data storage method based on spintronics according to any one of claims 1 to 9, characterized in that: The data storage system comprises: a spin current generation module, comprising a heavy metal layer, a ferromagnetic heterojunction, and an orthogonal electromagnetic field application device, for generating a spatially modulated spin-polarized current; A memory cell array comprising a plurality of memory cells, wherein the memory cells comprise a ferromagnetic free layer, a topological insulator layer, and a ferromagnetic reference layer, wherein the topological insulator layer induces a topologically protected spin transport channel; Quantum state detection module, integrating an asymmetric double-barrier tunnel junction and a superconducting quantum interference device to read the magnetization state; a collaborative operation controller configured to generate a spatiotemporally entangled spin wave field to synchronously control multiple memory cells through quantum interference effects; A topological locking device includes an antiferromagnetic exchange bias layer and a current driving circuit, which is used to lock the magnetization state to the topological configuration with the lowest energy.

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