Silicon carbide power module

Abstract

The invention discloses a silicon carbide power module, which comprises a top diamond micro-channel heat dissipation layer, a bottom diamond micro-channel heat dissipation layer, an upper diamond layer, a middle diamond layer and a lower diamond layer, and is characterized in that an upper current conducting layer is arranged between the upper diamond layer and the middle diamond layer; a lower current conducting layer is arranged between the middle diamond layer and the lower diamond layer, a plurality of power chips are embedded in the middle diamond layer, and the power chips are electrically connected with the upper current conducting layer and the lower current conducting layer. According to the silicon carbide power module, the diamond heat dissipation layers integrated with the micro-channels are arranged at the top and the bottom respectively, the heat exchange efficiency and the heat dissipation effect of the power module can be effectively improved, an external heat dissipation device is not needed, the structure is simpler, special heat dissipation can be conducted on the area where the power chip is located, and the service life is prolonged. And the purposiveness and the effectiveness of heat dissipation are higher.

Description

Technical Field

[0001] The present invention belongs to the technical field of power electronic device packaging, and specifically relates to a high-power density silicon carbide power module based on diamond microchannel heat dissipation and chip stacking packaging, which is suitable for scenarios with high current and high heat dissipation requirements such as new energy power generation, electric vehicles, and industrial motor drives. Background Art

[0002] Traditional SiC power modules use copper substrates (such as DBC) or aluminum heat sinks, which have limited thermal conductivity (approximately 400 W / mK for copper). Thermal expansion mismatch is prone to occur at high temperatures, resulting in high chip thermal resistance and reduced reliability.

[0003] Forced air cooling / liquid cooling requires a complex external heat dissipation system, which takes up space and is inefficient. Traditional bonding wires have problems such as high parasitic inductance, uneven current distribution, and easy burning under high power. The insulation layer of the copper substrate has poor thermal conductivity, which aggravates heat accumulation in the chip. The planar layout makes the module large and difficult to meet high power density requirements. In addition, although existing technologies (such as double-sided heat dissipation modules and silver sintered interconnects) improve heat dissipation and electrical performance, they do not solve the problem of coordinated optimization of heat dissipation, electrical conductivity, and packaging density. The application of diamond in power devices is limited to local heat dissipation (such as heat sinks) and is not deeply integrated with microchannels and chip stacking designs. Summary of the Invention

[0004] The purpose of the present invention is to provide a silicon carbide power module in response to the problems existing in the prior art.

[0005] To achieve the above object, the technical solution adopted by the present invention is: A silicon carbide power module comprises a top diamond microfluidic channel heat dissipation layer and a bottom diamond microfluidic channel heat dissipation layer, and a multilayer stacked structure arranged between the top diamond microfluidic channel heat dissipation layer and the bottom diamond microfluidic channel heat dissipation layer; the multilayer stacked structure comprises an upper diamond layer, an intermediate diamond layer and a lower diamond layer, the upper diamond layer is located below the top diamond microfluidic channel heat dissipation layer, the lower diamond layer is located above the bottom diamond microfluidic channel heat dissipation layer, an upper current conduction layer is provided between the upper diamond layer and the intermediate diamond layer, a lower current conduction layer is provided between the intermediate diamond layer and the lower diamond layer, a plurality of power chips are embedded in the intermediate diamond layer, and the power chips are electrically connected to the upper current conduction layer and the lower current conduction layer.

[0006] This silicon carbide power module can effectively improve the heat exchange efficiency and heat dissipation effect of the power module by arranging diamond heat dissipation layers with integrated microchannels on the top and bottom respectively. It does not require an external heat dissipation device, has a simpler structure, and can specifically dissipate heat in the area where the power chip is located, making the heat dissipation more targeted and effective.

[0007] This silicon carbide power module also improves the power module stacking structure, integrating multiple layers of diamond with a chip stacking design to enhance the power module's insulation and heat dissipation performance while also reducing the module's parasitic inductance and contact resistance. This also effectively reduces the module's overall size and improves its current-carrying capacity.

[0008] Furthermore, the top diamond microfluidic channel heat dissipation layer, the bottom diamond microfluidic channel heat dissipation layer, the upper diamond layer, the middle diamond layer, and the lower diamond layer are all made of diamond material with a thermal conductivity of ≥1000W / mK and a breakdown field strength of ≥10MV / cm. Using diamond material as the insulating layer ensures both high thermal conductivity and high breakdown voltage.

[0009] Furthermore, the diamond material is a CVD diamond film, nanocrystalline diamond or a diamond composite material.

[0010] Furthermore, the top diamond microchannel heat dissipation layer and the bottom diamond microchannel heat dissipation layer are respectively provided with a heat transfer plate body, and the outer side surfaces of the heat transfer plate bodies are respectively provided with a plurality of heat exchange main fins, and a first microchannel is formed between adjacent heat exchange main fins. An embedded cluster heat dissipation area is also provided in the plurality of heat exchange main fins, and the embedded cluster heat dissipation area is arranged corresponding to the position of the power chip. The embedded cluster heat dissipation area includes heat exchange auxiliary fins provided on the heat transfer plate body, and a second microchannel is formed between adjacent heat exchange auxiliary fins, and the second microchannel is connected to the first microchannel. It can purposefully and efficiently dissipate heat in the area where the power chip is located, so that the temperature of the power chip can be reduced more quickly, and the temperature difference with the surrounding area can be reduced, so that the temperature and heat distribution of the entire multi-layer stacked structure is more uniform after heat dissipation.

[0011] Furthermore, several of the main heat exchange fins and several of the auxiliary heat exchange fins are arranged in a horizontal array, the density of the auxiliary heat exchange fins is greater than the density of the main heat exchange fins, the thickness of the auxiliary heat exchange fins does not exceed half of the thickness of the main heat exchange fins, and the thickness of the main heat exchange fins is less than the width of the first microchannel.

[0012] Furthermore, the intermediate diamond layers are a pair arranged in parallel up and down, an intermediate current conduction layer is provided between the pair of intermediate diamond layers, and the power chip includes an upper power chip and a lower power chip arranged in the pair of intermediate diamond layers, the upper power chip is electrically connected to the upper current conduction layer and the intermediate current conduction layer, and the lower power chip is electrically connected to the intermediate current conduction layer and the lower current conduction layer.

[0013] Furthermore, a pair of the middle diamond layers are respectively provided with embedding grooves which penetrate from top to bottom, the upper power chip is embedded and installed in the upper embedding groove, and the lower power chip is embedded and installed in the lower embedding groove.

[0014] Furthermore, the upper power chip and the lower power chip are respectively a plurality of silicon carbide power chips arranged at intervals, and the plurality of upper power chips and the plurality of lower power chips are respectively arranged one by one in an upper and lower manner.

[0015] Furthermore, the upper power chip is electrically connected to the upper current conduction layer and the middle current conduction layer through a wire-free interconnection structure, the lower power chip is also electrically connected to the middle current conduction layer and the lower current conduction layer through a wire-free interconnection structure, and the top diamond microchannel heat dissipation layer and the bottom diamond microchannel heat dissipation layer are connected to the multi-layer stacking structure respectively by direct bonding or welding.

[0016] Furthermore, the upper current conducting layer, the middle current conducting layer and the lower current conducting layer are copper material layers respectively, the thickness of the copper material layer is 50-500 μm, the surface roughness Ra≤1 μm, and the surface of the copper material layer is provided with a plating layer.

[0017] Furthermore, the cooling medium flowing through the top diamond micro-channel heat dissipation layer and the bottom diamond micro-channel heat dissipation layer is deionized water, ethylene glycol solution, hydrocarbon coolant or liquid metal.

[0018] Compared with the prior art, the beneficial effects of the present invention are: 1. The silicon carbide power module can effectively improve the heat exchange efficiency and heat dissipation effect of the power module by arranging diamond heat dissipation layers integrated with microchannels on the top and bottom respectively. No external heat dissipation device is required, the structure is simpler, and special heat dissipation can be performed for the area where the power chip is located, and the heat dissipation is more purposeful and effective; 2. The silicon carbide power module also improves the stacking structure of the power module, which not only integrates the multi-layer diamond with the chip stacking design to improve the insulation and heat dissipation performance of the power module, but also can reduce the parasitic inductance and contact resistance of the power module; at the same time, it also effectively reduces the overall volume of the power module and improves the current carrying capacity, reducing the volume by 50% and increasing the current carrying capacity by 20%; 3. The top diamond microchannel heat dissipation layer and the bottom diamond microchannel heat dissipation layer can dissipate heat to the multi-layer stacked structure in the upper and lower directions at the same time, and the upper diamond layer and the middle diamond The stone layer and the lower diamond layer not only play the role of interlayer insulation in the multi-layer stacking structure, but also play the role of heat conduction, which promptly conducts the heat generated between the layers and the chip to the diamond microchannel heat dissipation layer in the upper and lower directions. Compared with the traditional structure, it not only retains excellent insulation performance, but also greatly improves the thermal conductivity; 4. The upper current conduction layer and the lower current conduction layer can be separated by these diamond layers in the layers, and can also be effectively electrically connected to the power chip in the middle diamond layer, and the current distribution is relatively uniform, the electrical performance is excellent, and it is not easy to burn under high power; 5. The heat exchange auxiliary fins are arranged in the heat exchange main fins to further dissipate heat efficiently in the area where the power chip is located, so that the temperature at the power chip is reduced more quickly, and the temperature difference with the surrounding area is reduced, so that the temperature and heat distribution of the entire multi-layer stacking structure are more uniform after heat dissipation, and there will be no local high temperature. The safety is also higher and the performance of the power module will be more stable. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 This is a schematic diagram of the overall structure of a silicon carbide power module of the present invention; Figure 2 This is a schematic diagram of the top view of a silicon carbide power module of the present invention; Figure 3 This is a schematic diagram of the explosion structure of a silicon carbide power module of the present invention; Figure 4 This is a schematic diagram of the partial structure of a silicon carbide power module of the present invention; Figure 5 This is a schematic cross-sectional view of a silicon carbide power module according to the present invention; Figure 6 This is a schematic diagram of the explosion structure of the power chip, the middle diamond layer and the middle current conducting layer of the present invention; Figure 7 Schematic diagram of the integrated structure of the power chip, the intermediate diamond layer and the intermediate current conduction layer of the present invention; In the figure: 1. Top diamond microfluidic heat dissipation layer; 2. Bottom diamond microfluidic heat dissipation layer; 3. Multi-layer stacking structure; 4. Upper diamond layer; 5. Middle diamond layer; 501. Embedded groove; 6. Lower diamond layer; 7. Upper current conduction layer; 8. Lower current conduction layer; 9. Power chip; 901. Upper power chip; 902. Lower power chip; 10. Middle current conduction layer; 11. Heat transfer plate; 12. Main heat exchange fins; 13. First microchannel; 14. Embedded cluster heat dissipation area; 15. Heat exchange auxiliary fins; 16. Second microchannel. DETAILED DESCRIPTION

[0020] The following will clearly and completely describe the technical solution of the present invention in conjunction with the accompanying drawings. Obviously, the embodiments described are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0021] In the description of the present invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "inner," and "outer," etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings and are intended solely to facilitate and simplify the description of the present invention. They are not intended to indicate or imply that the devices or components referred to must have, be constructed, or operate in a specific orientation, and therefore should not be construed as limiting the present invention. Furthermore, the terms "first," "second," etc., etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0022] like Figures 1 to 7 As shown, a silicon carbide power module includes a top diamond microchannel heat dissipation layer 1 and a bottom diamond microchannel heat dissipation layer 2, and a multilayer stacking structure 3 arranged between the top diamond microchannel heat dissipation layer 1 and the bottom diamond microchannel heat dissipation layer 2; the multilayer stacking structure 3 includes an upper diamond layer 4, an intermediate diamond layer 5 and a lower diamond layer 6, the upper diamond layer 4 is located below the top diamond microchannel heat dissipation layer 1, the lower diamond layer 6 is located above the bottom diamond microchannel heat dissipation layer 2, an upper current conduction layer 7 is provided between the upper diamond layer 4 and the intermediate diamond layer 5, a lower current conduction layer 8 is provided between the intermediate diamond layer 5 and the lower diamond layer 6, and a plurality of stacked power chips 9 are embedded in the intermediate diamond layer 5, and the power chip 9 is electrically connected to the upper current conduction layer 7 and the lower current conduction layer 8.

[0023] This silicon carbide power module can effectively improve the heat exchange efficiency and heat dissipation effect of the power module by arranging diamond heat dissipation layers with integrated microchannels on the top and bottom respectively. It does not require an external heat dissipation device, has a simpler structure, and can specifically dissipate heat in the area where the power chip is located, making the heat dissipation more targeted and effective.

[0024] This silicon carbide power module also improves its stacking structure, integrating multiple layers of diamond with a chip stack design to enhance insulation and heat dissipation. It also reduces parasitic inductance and contact resistance, bringing the module's parasitic inductance to less than 5nH (compared to approximately 10-20nH for traditional bonding wires). This also effectively reduces the overall size of the power module and improves its current-carrying capacity.

[0025] The top diamond microchannel heat dissipation layer 1 and the bottom diamond microchannel heat dissipation layer 2 can dissipate heat to the multi-layer stacking structure in the upper and lower directions at the same time. The upper diamond layer 4, the middle diamond layer 5 and the lower diamond layer 6 not only play the role of interlayer insulation in the multi-layer stacking structure, but also play the role of heat conduction, and promptly conduct the heat generated between the layers and the chip to the diamond microchannel heat dissipation layers in the upper and lower directions. Compared with the existing ceramic layer structure, it not only retains excellent insulation performance, but also greatly improves thermal conductivity.

[0026] The upper current conducting layer 7 and the lower current conducting layer 8 can be separated by the diamond layers, and can also be effectively electrically connected to the power chip 9 in the middle diamond layer. Moreover, the current distribution is relatively uniform, the electrical performance is excellent, and it is not easy to burn under high power.

[0027] Through the above-mentioned structural improvements, this silicon carbide power module can be applied to application scenarios with voltage levels ≥1200V and current levels ≥100A, including electric vehicle motor drives, photovoltaic / wind power inverters, industrial inverters, high-frequency power conversion devices, etc.

[0028] Furthermore, the top diamond microchannel heat dissipation layer 1, the bottom diamond microchannel heat dissipation layer 2, the upper diamond layer 4, the middle diamond layer 5, and the lower diamond layer 6 are all made of diamond material with a thermal conductivity of ≥1000 W / mK and a breakdown field strength of ≥10 MV / cm. The diamond material is a CVD diamond film, nanocrystalline diamond, or a diamond composite material.

[0029] Diamond material is used as the insulating layer, which makes it have both high thermal conductivity and high breakdown voltage characteristics. Its thermal conductivity is higher than that of copper, which enables it to better absorb and transfer heat from the current conduction layer (copper material layer), thereby reducing the temperature of the current conduction layer.

[0030] Furthermore, the top diamond microchannel heat dissipation layer 1 and the bottom diamond microchannel heat dissipation layer 2 are respectively provided with a heat transfer plate body 11, and the outer side surfaces of the heat transfer plate body 11 are respectively provided with a plurality of heat exchange main fins 12, and a first microchannel 13 is formed between adjacent heat exchange main fins 12. An embedded cluster heat dissipation area 14 is also provided in the plurality of heat exchange main fins 12, and the embedded cluster heat dissipation area 14 is arranged corresponding to the position of the power chip 9. The embedded cluster heat dissipation area 14 includes heat exchange auxiliary fins 15 arranged on the heat transfer plate body 11, and a second microchannel 16 is formed between adjacent heat exchange auxiliary fins 15. The second microchannel 16 is connected to the first microchannel 13 near the position.

[0031] The main heat exchange fins 12 can greatly increase the heat exchange area of ​​the heat transfer plate and play an overall heat exchange role. When the cooling medium flows through these first microchannels 13, it exchanges heat with these main heat exchange fins 12 to take away the heat. Under normal circumstances, only these main heat exchange fins are provided to achieve the required heat dissipation effect. However, for the power module, multiple stacked chips are provided inside it. The chip is the main body of heat generation. Although the multi-layer stacked structure can be cooled as a whole, the temperature at the chip is higher and the temperature is more concentrated. By providing the embedded clustered heat dissipation area 14 in the area of ​​the main heat exchange fins 12, the area where the power chip 9 is located can be further efficiently cooled, so that the temperature at the power chip 9 can be reduced more quickly and the temperature difference with the surrounding area is reduced, so that after the heat is dissipated, the temperature and heat distribution of the entire multi-layer stacked structure are more uniform, and there will be no local high temperature. The safety is also higher and the performance of the power module will be more stable.

[0032] The embedded cluster heat dissipation area 14 is provided with more auxiliary heat exchange fins 15, which can further increase the heat exchange area there. The number of the second microchannels 16 is also increased accordingly, ensuring that each auxiliary heat exchange fin can effectively participate in the heat exchange.

[0033] Furthermore, several of the heat exchange main fins 12 and several of the heat exchange auxiliary fins 15 are arranged in a horizontal array, the density of the heat exchange auxiliary fins 15 is greater than the density of the heat exchange main fins 12, the thickness of the heat exchange auxiliary fins 15 does not exceed half of the thickness of the heat exchange main fins 12, and the thickness of the heat exchange main fins 12 is less than the width of the first microchannel 13.

[0034] The main heat exchange fins 12 and the auxiliary heat exchange fins 15 are arranged in parallel with the same arrangement direction. A section is broken in the continuous main heat exchange fins, and the auxiliary heat exchange fins are arranged in the broken area. The heights of the main heat exchange fins 12 and the auxiliary heat exchange fins 15 are basically the same, but the thickness and spacing between the two are different, which can form differentiated heat exchange effects.

[0035] In this embodiment, the height of the main heat exchange fins 12 and the auxiliary heat exchange fins 15 is twice or more the thickness of the heat transfer plate body 11, and the width of the second microchannel 16 does not exceed half the width of the first microchannel 13; specifically, the thickness of the heat transfer plate body is about 1 mm, the width of the first microchannel is 1-1.5 mm, the width of the second microchannel is about 0.5 mm, and the thickness of the main heat exchange fins is 1-1.3 mm.

[0036] In some embodiments, the end of the main heat exchange fin 12 facing the embedded cluster heat dissipation area 14 is provided with a chamfer, and a flared guide structure is formed between the end of the adjacent main heat exchange fin 12, which is conducive to the cooling medium flowing through the first microchannel 13 into the second microchannel 16. Both ends of the second microchannel 16 are arc structures, which reduces resistance and is conducive to the flow of the cooling medium.

[0037] Further, combined Figure 5-Figure 7 As shown, the intermediate diamond layers 5 are a pair arranged in parallel up and down, an intermediate current conduction layer 10 is provided between the pair of intermediate diamond layers 5, and the power chip 9 includes an upper power chip 901 and a lower power chip 902 arranged in the pair of intermediate diamond layers 5, the upper power chip 901 is electrically connected to the upper current conduction layer 7 and the intermediate current conduction layer 10, and the lower power chip 902 is electrically connected to the intermediate current conduction layer 10 and the lower current conduction layer 8.

[0038] The middle diamond layer 5, through its multi-layered design and composited with the middle current-conducting layer, enables the stacking of multiple power chips. This multi-layer stacking not only increases the number of chips but also balances heat dissipation and electrical performance. The stacked area corresponds to the embedded cluster heat dissipation area, ensuring effective heat dissipation for both the upper and lower power chips.

[0039] Furthermore, a pair of the intermediate diamond layers 5 are respectively provided with an embedding groove 501 penetrating from top to bottom, the upper power chip 901 is embedded and installed in the upper embedding groove 501, and the lower power chip 902 is embedded and installed in the lower embedding groove 501.

[0040] The embedded grooves 501 are not only used to connect and install the upper power chip 901 and the lower power chip 902, but can also form circumferential heat dissipation conditions. These power chips are surrounded by diamond materials, and the heat generated can be well transferred to the surroundings to avoid heat concentration; and these embedded grooves 501 can accommodate these power chips 9, avoiding the appearance of obvious layer gaps, and can also form insulation between layers so that the intermediate current conduction layers in the upper and lower directions are in direct contact.

[0041] Furthermore, the upper power chip 901 and the lower power chip 902 are respectively a plurality of silicon carbide power chips arranged at intervals, and the plurality of upper power chips and the plurality of lower power chips are arranged one by one in upper and lower order.

[0042] Through the above structural arrangement, this power module includes, from top to bottom, a top diamond microfluidic heat dissipation layer → an upper diamond layer (insulation + thermal conductivity) → an upper current conduction layer (current conduction) → an upper middle diamond layer (insulation + thermal conductivity + upper power chip) → an middle current conduction layer (current conduction + vertical interconnection) → a lower middle diamond layer (insulation + thermal conductivity + lower power chip) → a lower current conduction layer (current conduction) → a lower diamond layer (insulation + thermal conductivity) - a bottom diamond microfluidic heat dissipation layer.

[0043] Furthermore, the upper power chip 901 is electrically connected to the upper current conduction layer 7 and the middle current conduction layer 10 through a wire-free interconnection structure, and the lower power chip 902 is also electrically connected to the middle current conduction layer 10 and the lower current conduction layer 8 through a wire-free interconnection structure, thereby realizing vertical current conduction; the top diamond microchannel heat dissipation layer 1 and the bottom diamond microchannel heat dissipation layer 2 are respectively connected to the multi-layer stacking structure 3 by direct bonding or welding to form an integrated package.

[0044] The interconnection methods between the power chip and the copper material layer to achieve high power density integration are: silver sintering (sintering temperature 200-300°C, pressure 5-20MPa), transient liquid phase connection (TLP) (using alloy systems such as Ag-Sn and Cu-Sn), and copper-copper direct bonding (achieved by hot pressing or surface activated bonding).

[0045] Furthermore, the upper current conducting layer 7, the middle current conducting layer 10 and the lower current conducting layer 8 are respectively copper material layers, the thickness of the copper material layer is 50 to 500 μm, the surface roughness Ra ≤ 1 μm, and they are prepared by electroplated copper, rolled copper foil or cold-pressed sintered copper. The surface of the copper material layer is provided with a coating, such as Ni / Au, Ag or Sn coating, to reduce the contact resistance (<1 mΩ·cm²).

[0046] Between layers, such as diamond material layer and copper material layer or power chip, graphene thermal conductive glue, metal solder or thermal conductive silicone grease is also provided to make the interface thermal resistance less than 10 -6 m²K / W.

[0047] Furthermore, the cooling medium flowing through the top diamond microfluidic channel heat dissipation layer 1 and the bottom diamond microfluidic channel heat dissipation layer 2 is deionized water, ethylene glycol solution, hydrocarbon coolant, or liquid metal. The top diamond microfluidic channel heat dissipation layer and the bottom diamond microfluidic channel heat dissipation layer can be disposed in a micro-housing with an inlet and outlet to facilitate the placement of the cooling medium. Alternatively, the top diamond microfluidic channel heat dissipation layer and the bottom diamond microfluidic channel heat dissipation layer can be immersed in a tank containing the cooling medium.

[0048] While embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions, and variations may be made to these embodiments without departing from the principles and spirit of the invention, and that the scope of the invention is defined by the appended claims and their equivalents.

Claims

1. A silicon carbide power module, characterized in that: It includes a top diamond microfluidic channel heat dissipation layer and a bottom diamond microfluidic channel heat dissipation layer, and a multi-layer stacking structure arranged between the top diamond microfluidic channel heat dissipation layer and the bottom diamond microfluidic channel heat dissipation layer; the multi-layer stacking structure includes an upper diamond layer, an intermediate diamond layer and a lower diamond layer, the upper diamond layer is located below the top diamond microfluidic channel heat dissipation layer, the lower diamond layer is located above the bottom diamond microfluidic channel heat dissipation layer, an upper current conduction layer is provided between the upper diamond layer and the intermediate diamond layer, a lower current conduction layer is provided between the intermediate diamond layer and the lower diamond layer, a plurality of power chips are embedded in the intermediate diamond layer, and the power chips are electrically connected to the upper current conduction layer and the lower current conduction layer.

2. The silicon carbide power module according to claim 1, characterized in that: The top diamond microchannel heat dissipation layer, the bottom diamond microchannel heat dissipation layer, the upper diamond layer, the middle diamond layer and the lower diamond layer are all made of diamond material, the thermal conductivity of which is ≥1000W / mK and the breakdown field strength is ≥10MV / cm.

3. The silicon carbide power module according to claim 1, characterized in that: The top diamond microchannel heat dissipation layer and the bottom diamond microchannel heat dissipation layer are respectively provided with a heat transfer plate body, and the outer side surfaces of the heat transfer plate bodies are respectively provided with a plurality of heat exchange main fins, and a first microchannel is formed between adjacent heat exchange main fins. An embedded cluster heat dissipation area is also provided in the plurality of heat exchange main fins, and the embedded cluster heat dissipation area is arranged corresponding to the position of the power chip. The embedded cluster heat dissipation area includes heat exchange auxiliary fins arranged on the heat transfer plate body, and a second microchannel is formed between adjacent heat exchange auxiliary fins, and the second microchannel is connected to the first microchannel.

4. The silicon carbide power module according to claim 3, characterized in that: Several of the main heat exchange fins and several of the auxiliary heat exchange fins are arranged in a horizontal array, the density of the auxiliary heat exchange fins is greater than the density of the main heat exchange fins, the thickness of the auxiliary heat exchange fins does not exceed half of the thickness of the main heat exchange fins, and the thickness of the main heat exchange fins is less than the width of the first microchannel.

5. The silicon carbide power module according to claim 1, characterized in that: The intermediate diamond layers are a pair arranged in parallel up and down, an intermediate current conduction layer is provided between the pair of intermediate diamond layers, the power chip includes an upper power chip and a lower power chip arranged in the pair of intermediate diamond layers, the upper power chip is electrically connected to the upper current conduction layer and the intermediate current conduction layer, and the lower power chip is electrically connected to the intermediate current conduction layer and the lower current conduction layer.

6. The silicon carbide power module according to claim 5, characterized in that: A pair of the middle diamond layers are respectively provided with embedding grooves which penetrate from top to bottom. The upper power chip is embedded in the upper embedding groove, and the lower power chip is embedded in the lower embedding groove.

7. The silicon carbide power module according to claim 5, characterized in that: The upper power chips and the lower power chips are respectively a plurality of silicon carbide power chips arranged at intervals, and the plurality of upper power chips and the plurality of lower power chips are arranged one by one in upper and lower order.

8. The silicon carbide power module according to claim 5, characterized in that: The upper power chip is electrically connected to the upper current conduction layer and the middle current conduction layer through a non-bonding wire interconnection structure, and the lower power chip is also electrically connected to the middle current conduction layer and the lower current conduction layer through a non-bonding wire interconnection structure. The top diamond microchannel heat dissipation layer and the bottom diamond microchannel heat dissipation layer are respectively connected to the multi-layer stacking structure by direct bonding or welding.

9. The silicon carbide power module according to claim 5, characterized in that: The upper current conducting layer, the middle current conducting layer and the lower current conducting layer are copper material layers respectively. The thickness of the copper material layer is 50-500 μm, the surface roughness Ra≤1 μm, and the surface of the copper material layer is provided with a plating layer.

10. The silicon carbide power module according to claim 1, characterized in that: The cooling medium flowing through the top diamond micro-channel heat dissipation layer and the bottom diamond micro-channel heat dissipation layer is deionized water, ethylene glycol solution, hydrocarbon coolant or liquid metal.

Images