Antenna structure and communication device

Abstract

The application provides an antenna structure and a communication device, and relates to the technical field of communication antennas.In the application, the antenna structure comprises a metasurface structure layer and a dual-frequency feeding structure layer, and the dual-frequency feeding structure layer comprises: a first dielectric substrate layer; a magneto-electric dipole metal patch, which constitutes a Fabry-Perot resonant cavity with one side of the metasurface structure layer close to the first dielectric substrate layer; and a first metal ground plate layer, wherein the first metal ground plate layer is connected with the magneto-electric dipole metal patch through a first metalized via hole, and the first metal ground plate layer is provided with a feeding slot and a symmetrical double slot, the feeding slot is used for high-frequency feeding of the magneto-electric dipole metal patch, and the symmetrical double slot is used for low-frequency differential feeding of the metasurface structure layer.Based on the above, the problem that the gain at the dual frequency is relatively low in the prior art can be improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of communication antennas, in particular to an antenna structure and a communication device. BACKGROUND

[0002] In recent years, the ground communication system has developed to the fifth generation of commercial mobile communication due to its advantages of wide frequency band, high code rate and high communication quality. Satellite communication also develops rapidly due to its advantages of large communication capacity, not easy to be limited by geographical environment and can realize all-weather and non-dead-angle coverage. As a supplement and expansion of the terrestrial mobile communication system, the medium and low orbit satellite develops rapidly and can complete the organic combination of the ground public network. Therefore, the "star-ground integration" communication which integrates the ground mobile communication network and the satellite communication network is widely considered as an important development direction of future mobile communication to realize lower latency, larger capacity and wider coverage. Generally, the ground communication adopts a linear polarization antenna of Sub6-GHz frequency band, and the satellite communication adopts a circular polarization antenna of millimeter wave frequency band.

[0003] Therefore, it is urgent to design a dual-frequency dual-polarization (low-frequency linear polarization and high-frequency circular polarization) antenna for star-ground integration application, which has practical research significance. However, in the existing dual-frequency dual-polarization antenna, the gain at the dual frequency is relatively low. SUMMARY

[0004] Therefore, the purpose of the present application is to provide an antenna structure and a communication device to solve the problem of relatively low gain at the dual frequency in the prior art.

[0005] To achieve the above purpose, the present application adopts the following technical solutions:

[0006] An antenna structure comprises a metasurface structure layer and a dual-frequency feeding structure layer arranged opposite to the metasurface structure layer, wherein the dual-frequency feeding structure layer comprises:

[0007] a first dielectric substrate layer arranged opposite to the metasurface structure layer;

[0008] a magneto-electric dipole metal patch located on the side of the first dielectric substrate layer close to the metasurface structure layer, wherein the magneto-electric dipole metal patch and the side of the metasurface structure layer close to the first dielectric substrate layer constitute a Fabry-Perot resonant cavity;

[0009] a first metal ground plate layer located on a side of the first dielectric substrate layer away from the metasurface structure layer, wherein the first metal ground plate layer is connected to the magneto-electric dipole metal patch through first metalized through holes, and has a feed slot and a symmetric double slot on the first metal ground plate layer, the feed slot is used for high-frequency feed of the magneto-electric dipole metal patch, and the symmetric double slot is used for low-frequency differential feed of the metasurface structure layer.

[0010] In a preferred selection of the present application, in the above antenna structure, the feed slot is located at the center of the first metal ground plate layer, and the two parts of the symmetric double slot are located on the opposite sides of the feed slot, respectively.

[0011] In a preferred selection of the present application, in the above antenna structure, the first metal ground plate layer further has second metalized through holes, wherein the second metalized through holes are distributed along the feed slot and the symmetric double slot, so that the feed slot and the symmetric double slot are isolated.

[0012] In a preferred selection of the present application, in the above antenna structure, the second metalized through holes surround the feed slot and the symmetric double slot, respectively.

[0013] In a preferred selection of the present application, in the above antenna structure, the dual-frequency feed structure layer further comprises:

[0014] a second dielectric substrate layer located on a side of the first metal ground plate layer away from the first dielectric substrate layer, wherein the second metalized through holes pass through the second dielectric substrate layer;

[0015] a second metal ground plate layer located on a side of the second dielectric substrate layer away from the first metal ground plate layer, wherein the second metal ground plate layer and the first metal ground plate layer are connected through the second metalized through holes.

[0016] In a preferred selection of the present application, in the above antenna structure, the dual-frequency feed structure layer further comprises:

[0017] a third dielectric substrate layer located on a side of the second metal ground plate layer away from the second dielectric substrate layer;

[0018] a high-frequency microstrip feed line located on a side of the third dielectric substrate layer away from the second metal ground plate layer, wherein the high-frequency microstrip feed line is used for transmitting excitation signals to the corresponding position of the feed slot and coupling to the magneto-electric dipole metal patch for high-frequency feed;

[0019] A low-frequency microstrip feed line located on a side of the third dielectric substrate layer away from the second metal ground plane layer, wherein the low-frequency microstrip feed line is used to transmit an excitation signal to a corresponding position of the symmetric double slot and feed the symmetric double slot by coupling to realize low-frequency differential feeding of the metasurface structure layer.

[0020] In a preferred selection of the present application, in the above antenna structure, the metasurface structure layer comprises:

[0021] A fourth dielectric substrate layer;

[0022] A first unit structure located on a side of the fourth dielectric substrate layer away from the first dielectric substrate layer, wherein the first unit structure comprises a plurality of substructures;

[0023] A second unit structure located on a side of the fourth dielectric substrate layer close to the first dielectric substrate layer, wherein the second unit structure comprises a plurality of substructures, and the plurality of substructures of the first unit structure and the plurality of substructures of the second unit structure are arranged in an array.

[0024] In a preferred selection of the present application, in the above antenna structure, the metasurface structure layer further comprises:

[0025] A third metalized through hole located in the fourth dielectric substrate layer, wherein the third metalized through hole penetrates the fourth dielectric substrate layer and is connected with the first unit structure and the second unit structure respectively to form a cavity structure.

[0026] In a preferred selection of the present application, in the above antenna structure, the antenna structure further comprises:

[0027] A dielectric substrate via, wherein the dielectric substrate via penetrates the metasurface structure layer and the dual-frequency feed structure layer to fix the metasurface structure layer and the dual-frequency feed structure layer.

[0028] Based on the above, the present application further provides a communication device comprising:

[0029] The above antenna structure;

[0030] A radio frequency signal processing device, wherein the radio frequency signal processing device is connected with the antenna structure and is used to receive and process signals received by the antenna structure or transmit and output signals to be transmitted through the antenna structure.

[0031] The antenna structure and the communication device provided in the application include a metasurface structure layer and a dual-frequency feeding structure layer, and the dual-frequency feeding structure layer includes: a first dielectric substrate layer; a magneto-electric dipole metal patch, which forms a Fabry-Perot resonant cavity with the metasurface structure layer on the side close to the first dielectric substrate layer; and a first metal ground plate layer, wherein the first metal ground plate layer is connected with the magneto-electric dipole metal patch through first metalized through holes, and the first metal ground plate layer is provided with a feeding slot and a symmetric double slot, the feeding slot is used for high-frequency feeding of the magneto-electric dipole metal patch, and the symmetric double slot is used for low-frequency differential feeding of the metasurface structure layer. Based on the above, on the one hand, by taking the magneto-electric dipole metal patch as the feeding structure of the high-frequency part and feeding the magneto-electric dipole patch through the slot, the gain of the antenna at the high-frequency part can be improved, and by combining to form the Fabry-Perot resonant cavity, the gain can be further improved. On the other hand, in the low-frequency part, the symmetric double slot is used for differential feeding of the metasurface structure layer, so that the gain of the low-frequency part can be improved. Therefore, based on the scheme provided in the application, the gain of the low-frequency part and the high-frequency part can be improved respectively, so as to solve the problem that the gain at the dual-frequency part is relatively low in the prior art. Moreover, since the magneto-electric dipole metal patch and the symmetric double slot are actually arranged in layers, the isolation degree is good, so that the interference between the high-frequency and the low-frequency is reduced, and the reliability of signal transmission is further ensured. BRIEF DESCRIPTION OF DRAWINGS

[0032] In order to make the above-mentioned purposes, features and advantages of the application more obvious and easy to understand, the following preferred embodiments are specifically described below, and the accompanying drawings are referred to for detailed description.

[0033] Figure 1 The structure block diagram of the antenna structure provided in the embodiment of the application.

[0034] Figure 2 The structure block diagram of the dual-frequency feeding structure layer provided in the embodiment of the application.

[0035] Figure 3 The cross-sectional view of the third dielectric substrate layer provided in the embodiment of the application.

[0036] Figure 4 The cross-sectional view of the upper surface of the metasurface structure layer provided in the embodiment of the application.

[0037] Figure 5 The cross-sectional view of the lower surface of the metasurface structure layer provided in the embodiment of the application.

[0038] Figure 6 The simulation curve diagram of the-10 dB impedance bandwidth of the high-frequency provided in the embodiment of the application.

[0039] Figure 7A simulation curve diagram of a low-frequency -10 dB impedance bandwidth provided for an embodiment of the present application.

[0040] Figure 8 A simulation curve diagram of a gain and an axial ratio changing with frequency provided for an embodiment of the present application.

[0041] Figure 9 A simulation radiation pattern at 4.6 GHz provided for an embodiment of the present application.

[0042] Figure 10 A simulation radiation pattern at 30.3 GHz provided for an embodiment of the present application.

[0043] Icon: 1 - fourth dielectric substrate layer; 2 - first unit structure; 3 - second unit structure; 4 - third metallized via; 5 - dielectric substrate via; 6 - first dielectric substrate layer; 7 - second dielectric substrate layer; 8 - third dielectric substrate layer; 9 - first metal ground plate layer; 10 - second metal ground plate layer; 11 - magneto-electric dipole metal patch; 12 - first metallized via; 13 - feed gap; 14 - symmetric double gap; 15 - second metallized via; 16 - low-frequency microstrip feed line; 17 - quarter-wave impedance transformer; 18 - matching device; 19 - high-frequency microstrip feed line. DETAILED DESCRIPTION

[0044] In order to make the objectives, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments of the present application. The components of the embodiments of the present application described and shown in the drawings herein can be arranged and designed in various different configurations.

[0045] Therefore, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the claimed present application, but only represents selected embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative labor fall within the scope of protection of the present application.

[0046] As Figure 1 shown, the embodiments of the present application provide an antenna structure. Wherein, a metasurface structure layer and a dual-frequency feed structure layer oppositely arranged with the metasurface structure layer are included.

[0047] In detail, the dual-frequency feeding structure layer can include a first dielectric substrate layer 6, a magnetic-electric dipole metal patch 11, and a first metal ground plane layer 9. The first dielectric substrate layer 6 is arranged opposite to the metasurface structure layer. The magnetic-electric dipole metal patch 11 is located on a side of the first dielectric substrate layer 6 close to the metasurface structure layer, and a surface of the magnetic-electric dipole metal patch 11 close to the first dielectric substrate layer 6 and a surface of the metasurface structure layer close to the first dielectric substrate layer 6 form a Fabry-Perot resonant cavity. The first metal ground plane layer 9 is located on a side of the first dielectric substrate layer 6 away from the metasurface structure layer, and the first metal ground plane layer 9 is connected to the magnetic-electric dipole metal patch 11 through a first metalized via hole 12,

[0048] In combination Figure 2 As shown in the drawings, the first metal ground plane layer 9 has a feeding slot 13 and a symmetric double slot 14. The feeding slot 13 is used for high-frequency feeding of the magnetic-electric dipole metal patch 11, and the symmetric double slot 14 is used for low-frequency differential feeding of the metasurface structure layer.

[0049] Based on the above, in one aspect, by using the magnetic-electric dipole metal patch 11 as the feeding structure of the high-frequency part and feeding the magnetic-electric dipole patch through the slot, the gain of the antenna at the high-frequency part can be improved, and by combining to form the Fabry-Perot resonant cavity, the gain can be further improved. In another aspect, in the low-frequency part, the symmetric double slot 14 is used for differential feeding of the metasurface structure layer, so that the gain of the low-frequency part can be improved. Therefore, based on the scheme provided in the embodiments of the present application, the gain of the low-frequency part and the high-frequency part can be improved respectively, thereby solving the problem that the gain at the dual-frequency part is relatively low in the prior art.

[0050] In addition, since the magnetic-electric dipole metal patch 11 and the symmetric double slot 14 are actually arranged in layers, they have good isolation, so that the interference between the high-frequency and the low-frequency is reduced, further ensuring the reliability of signal transmission.

[0051] In a first aspect, for the dual-frequency feeding structure layer, it needs to be explained that the specific distribution of the feeding slot 13 and the symmetric double slot 14 in the dual-frequency feeding structure layer is not limited and can be selected according to actual needs.

[0052] For example, in an alternative embodiment, in order to ensure that the feeding slot 13 and the symmetric double slot 14 can respectively feed the high-frequency part and the low-frequency part better, the feeding slot 13 is located at the center of the first metal ground plane layer 9, and the two parts of the symmetric double slot 14 are respectively located on the two sides opposite to the feeding slot 13.

[0053] It can be understood that, in an alternative embodiment, in order to further improve the isolation between high frequency and low frequency, the first metal floor layer 9 is further provided with a second metalized via hole 15. The second metalized via hole 15 is distributed along the feed slot 13 and the symmetrical double slot 14, so that the feed slot 13 and the symmetrical double slot 14 are isolated.

[0054] It can be understood that, in an alternative embodiment, in order to further improve the isolation between high frequency and low frequency, the second metalized via hole 15 surrounds the feed slot 13 and the symmetrical double slot 14 respectively. As shown in the example, the second metalized via hole 15 can include a plurality of metalized sub-via holes, which can be continuous along the outer contour of the feed slot 13 and the symmetrical double slot 14, so as to surround the feed slot 13 and the symmetrical double slot 14 respectively, thereby achieving effective isolation of the feed slot 13 and the symmetrical double slot 14. Figure 2

[0055] It can be understood that, in an alternative embodiment, the dual-frequency feed structure layer can further include a second dielectric substrate layer 7 and a second metal floor layer 10.

[0056] In detail, the second dielectric substrate layer 7 is located on the side of the first metal floor layer 9 away from the first dielectric substrate layer 6, and the second metalized via hole 15 penetrates the second dielectric substrate layer 7. The second metal floor layer 10 is located on the side of the second dielectric substrate layer 7 away from the first metal floor layer 9, and the second metal floor layer 10 and the first metal floor layer 9 are connected through the second metalized via hole 15.

[0057] It can be understood that, in an alternative embodiment, the dual-frequency feed structure layer can further include a third dielectric substrate layer 8, a high-frequency microstrip feed line 19 and a low-frequency microstrip feed line 16.

[0058] ​In detail, the third dielectric substrate layer 8 is located on the side of the second metal ground plane layer 10 away from the second dielectric substrate layer 7. The high-frequency microstrip feed line 19 is located on the side of the third dielectric substrate layer 8 away from the second metal ground plane layer 10, and is used to transmit an excitation signal to the corresponding position of the feed gap 13 and perform high-frequency feeding on the magneto-electric dipole metal patch 11 through coupling. It should be noted that the magneto-electric dipole metal patch 11 and the first metalized via hole 12 together form a magneto-electric dipole unit structure, which radiates linearly polarized waves to the lower surface of the metasurface structure layer (i.e., the surface close to the dual-frequency feed structure layer). The low-frequency microstrip feed line 16 is located on the side of the third dielectric substrate layer 8 away from the second metal ground plane layer 10, and is used to transmit an excitation signal to the corresponding position of the symmetric double slot 14 and perform feeding on the symmetric double slot 14 through coupling to realize low-frequency differential feeding on the metasurface structure layer.

[0059] In addition, it should be noted that the dual-frequency feed structure layer also includes Figure 3 , and can further include a quarter-wave impedance transformer 17 and a matching device 18. The quarter-wave impedance transformer 17 is connected to the low-frequency microstrip feed line 16 and the matching device 18, respectively, so that the low-frequency microstrip feed line 16 can be extended to the corresponding position of the symmetric double slot 14 through the quarter-wave impedance transformer 17 and the matching device 18.

[0060] Specifically, the symmetric double slot 14 refers to two symmetrically distributed slots, and the matching device 18 can be two. One end of the quarter-wave impedance transformer 17 is connected to the low-frequency microstrip feed line 16, and the other end can be divided into two parts and extended to the positions of the two matching devices 18, respectively, and connected to the two matching devices 18, respectively, so as to output low-frequency energy through the two matching devices 18. The matching device 18 is used to realize the effect of enhancing the low-frequency impedance bandwidth.

[0061] In addition, the impedances of the high-frequency microstrip feed line 19 and the low-frequency microstrip feed line 16 can be 50Ω.

[0062] In a second aspect, it should be noted that the specific composition of the metasurface structure layer is not limited and can be selected according to actual needs.

[0063] For example, in an alternative embodiment, the metasurface structure layer can include a fourth dielectric substrate layer 1, a first unit structure 2, and a second unit structure 3.

[0064] In detail, the first unit structure 2 is located on the side of the fourth dielectric substrate layer 1 away from the first dielectric substrate layer 6, and the first unit structure 2 includes a plurality of substructures which can be distributed in an array (as shown in Figure 4 The second unit structure 3 is located on the side of the fourth dielectric substrate layer 1 close to the first dielectric substrate layer 6, and the second unit structure 3 includes a plurality of substructures which can be distributed in an array (as shown in Figure 5

[0065] It should be noted that by adjusting the transmittance and reflectance of the first unit structure 2 and the second unit structure 3, a part of the high-frequency linearly polarized incident wave can be partially reflected and partially transmitted, and a part of the transmitted wave can be converted into a cross-polarized wave, so as to synthesize a circularly polarized wave with the original polarized part, and the -10 dB impedance bandwidth of the antenna is 29.5-31.0 GHz (as shown in Figure 6 In addition, after being composed into an array, the whole can be used as a resonator to realize double resonance of TM10 mode and TM20 mode at low frequency, so as to expand the impedance bandwidth of the antenna at low frequency, and the -10 dB impedance bandwidth of the antenna at low frequency is 3.95-5.5 GHz (as shown in Figure 7

[0066] It can be understood that in an alternative embodiment, the metasurface structure layer can further include a third metallized via hole 4.

[0067] In detail, the third metallized via hole 4 is located on the fourth dielectric substrate layer 1. The third metallized via hole 4 penetrates the fourth dielectric substrate layer 1 and is connected with the first unit structure 2 and the second unit structure 3 respectively to form a cavity structure.

[0068] It should be noted that the first unit structure 2 and the second unit structure 3 both include a plurality of substructures (which can both belong to metal structures, and can also be referred to as radiation structures), therefore, the third metallized via hole 4 can be multiple, and one substructure included in the first unit structure 2 can be connected with one substructure included in the second unit structure 3 through one third metallized via hole 4. In this way, after forming the corresponding cavity structure, the bandwidth can be expanded.

[0069] In a third aspect, it should be further noted that in an alternative embodiment, the antenna structure can further include a dielectric substrate via hole 5.

[0070] ​​In detail, the dielectric substrate via 5 penetrates the metasurface structure layer and the dual-frequency feeding structure layer, and is used for fixing the metasurface structure layer and the dual-frequency feeding structure layer. For example, the fixing can be achieved by a connecting structure penetrating the dielectric substrate via 5. Specifically, the dielectric substrate via 5 can penetrate the first dielectric substrate layer 6, the second dielectric substrate layer 7, the third dielectric substrate layer 8, the fourth dielectric substrate layer 1, the first metal ground layer 9 and the second metal ground layer 10.

[0071] In addition, in combination with Figure 8 , Figure 9 and Figure 10 , it can be known that, based on the above antenna structure, a wider frequency band (low frequency 3.95-5.5 GHz, high frequency 29.5-31.0 GHz) and higher gain (maximum gain is 9.3 dBi and 15.3 dBi, respectively) can be achieved. Specifically, as shown in Figure 8 , the antenna structure has an axial ratio less than 3 dB in the frequency band range of 29.5-31.0 GHz, and a maximum gain of 15.3 dBi. As shown in Figure 9 , the antenna structure has a maximum gain of 9.3 dBi at 4.6 GHz. As shown in Figure 10 , the antenna structure has a maximum gain of 15.3 dBi at 30.3 GHz. Wherein, Theta (deg) represents the angle of the radiation direction.

[0072] The embodiment of the present application also provides a communication device, wherein the communication device can include a radio frequency signal processing device and the above antenna structure. In detail, the radio frequency signal processing device is connected with the antenna structure, and is used for receiving and processing the signal received by the antenna structure or transmitting and outputting the signal to be transmitted through the antenna structure.

[0073] In summary, the antenna structure and the communication device provided in the application include a metasurface structure layer and a dual-frequency feeding structure layer. The dual-frequency feeding structure layer includes: a first dielectric substrate layer; a magneto-electric dipole metal patch, which, together with one side of the metasurface structure layer close to the first dielectric substrate layer, forms a Fabry-Perot resonant cavity; and a first metal ground plate layer, wherein the first metal ground plate layer is connected to the magneto-electric dipole metal patch through first metalized through holes, and has a feeding slot and a symmetric double slot on the first metal ground plate layer. The feeding slot is used for high-frequency feeding of the magneto-electric dipole metal patch, and the symmetric double slot is used for low-frequency differential feeding of the metasurface structure layer. Based on the above, on the one hand, by taking the magneto-electric dipole metal patch as the feeding structure of the high-frequency part and feeding the magneto-electric dipole patch through the slot, the gain of the antenna at the high-frequency part can be improved, and by combining to form the Fabry-Perot resonant cavity, the gain can be further improved. On the other hand, in the low-frequency part, the symmetric double slot is used for differential feeding of the metasurface structure layer, which can improve the gain of the low-frequency part. Therefore, based on the scheme provided in the application, the gain of the low-frequency part and the high-frequency part can be improved respectively, thereby solving the problem that the gain at the dual-frequency part is relatively low in the prior art. Moreover, since the magneto-electric dipole metal patch and the symmetric double slot are actually arranged in layers, they have good isolation, thereby reducing the interference between the high-frequency and the low-frequency and further ensuring the reliability of signal transmission.

[0074] The above only describes the preferred embodiments of the application and is not intended to limit the application. The application can have various modifications and changes for those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the application shall be included in the protection scope of the application.

Claims

1. An antenna structure, characterized by The super surface structure layer and the double-frequency feeding structure layer arranged opposite to the super surface structure layer, wherein the double-frequency feeding structure layer comprises: The first dielectric substrate layer arranged opposite to the super surface structure layer; The magnetoelectric dipole metal patch located on the side of the first dielectric substrate layer close to the super surface structure layer, wherein the magnetoelectric dipole metal patch and the side of the super surface structure layer close to the first dielectric substrate layer constitute a Fabry-Perot resonant cavity; The first metal ground plate layer located on the side of the first dielectric substrate layer away from the super surface structure layer, wherein the first metal ground plate layer is connected with the magnetoelectric dipole metal patch through the first metalized via hole, and the first metal ground plate layer has a feeding slot and a symmetric double slot, the feeding slot is used for high-frequency feeding of the magnetoelectric dipole metal patch, and the symmetric double slot is used for low-frequency differential feeding of the super surface structure layer; The feeding slot is located at the center position of the first metal ground plate layer, and the two parts of the symmetric double slot are located on the opposite sides of the feeding slot, respectively, and the first metal ground plate layer further has a second metalized via hole, wherein the second metalized via hole is distributed along the feeding slot and the symmetric double slot, so that the feeding slot and the symmetric double slot are isolated, and the second metalized via hole surrounds the feeding slot and the symmetric double slot, respectively; The double-frequency feeding structure layer further comprises: The second dielectric substrate layer located on the side of the first metal ground plate layer away from the first dielectric substrate layer, wherein the second metalized via hole penetrates through the second dielectric substrate layer; The second metal ground plate layer located on the side of the second dielectric substrate layer away from the first metal ground plate layer, wherein the second metal ground plate layer and the first metal ground plate layer are connected through the second metalized via hole; The third dielectric substrate layer located on the side of the second metal ground plate layer away from the second dielectric substrate layer; The high-frequency microstrip feed line located on the side of the third dielectric substrate layer away from the second metal ground plate layer, wherein the high-frequency microstrip feed line is used for transmitting excitation signals to the corresponding position of the feeding slot and performing high-frequency feeding on the magnetoelectric dipole metal patch through coupling; The low-frequency microstrip feed line located on the side of the third dielectric substrate layer away from the second metal ground plate layer, wherein the low-frequency microstrip feed line is used for transmitting excitation signals to the corresponding position of the symmetric double slot and feeding the symmetric double slot through coupling to realize low-frequency differential feeding of the super surface structure layer.

2. The antenna structure of claim 1, wherein, The super surface structure layer comprises: The fourth dielectric substrate layer; The first unit structure located on the side of the fourth dielectric substrate layer away from the first dielectric substrate layer, wherein the first unit structure comprises a plurality of substructures; The second unit structure located on the side of the fourth dielectric substrate layer close to the first dielectric substrate layer, wherein the second unit structure comprises a plurality of substructures, and the plurality of substructures of the first unit structure and the plurality of substructures of the second unit structure are arranged in an array.

3. The antenna structure of claim 2, wherein, The super surface structure layer further comprises: A third metallized via located at the fourth dielectric substrate layer, wherein the third metallized via penetrates the fourth dielectric substrate layer and is connected with the first unit structure and the second unit structure respectively to form a cavity structure.

4. The antenna structure of claim 1, wherein, The antenna structure further comprises: A dielectric substrate via, wherein the dielectric substrate via penetrates the metasurface structure layer and the dual-frequency feed structure layer to fix the metasurface structure layer and the dual-frequency feed structure layer.

5. A communication device, characterized by Comprise: The antenna structure of any one of claims 1-4; A radio frequency signal processing device, wherein the radio frequency signal processing device is connected with the antenna structure and is used for receiving processing of signals received by the antenna structure or transmitting output of signals to be transmitted through the antenna structure.

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