Preparation method of temperature enhanced photoelectric detector, early warning Internet of Things system and working method

The temperature-enhanced photodetector constructed using Nb3Se12I nanowire material solves the problem of photodetector performance degradation at high temperatures, achieving enhanced photoelectric response in high-temperature environments. It is suitable for intelligent early warning scenarios, especially forest fire monitoring and equipment overheating alarms, improving the intelligence level and safety protection capabilities of the early warning system.

CN120857677APending Publication Date: 2025-10-28XIDIAN UNIV
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Patent Information

Application Number
CN202510959566.5
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-07-11
Publication Date
2025-10-28

AI Technical Summary

Technical Problem

Existing photodetectors operate at room temperature and their photoelectric performance decreases with increasing temperature, limiting their application in high-temperature environments. In particular, there is a lack of stable and integrable material systems and device solutions for intelligent early warning scenarios that require simultaneous monitoring of temperature rise and light changes.

Method used

A temperature-enhanced photodetector with quasi-one-dimensional nanowire structure and interdigitated electrode structure was constructed using Nb3Se12I nanowire material. By combining chemical vapor transport, maskless photolithography and resistive thermal evaporation technology, a photodetector that maintains or enhances photoelectric response under high temperature environment was fabricated and an early warning Internet of Things system was built.

Benefits of technology

It enhances photoelectric response in high-temperature environments, making it suitable for intelligent early warning scenarios such as forest fire monitoring and equipment overheating alarms. It improves the environmental adaptability and reliability of the early warning system, has multi-module linkage control capabilities, and supports on-site alarms, power failure protection, and remote information reporting.

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Abstract

The invention belongs to the field of temperature alarm systems, discloses a preparation method of a temperature enhanced photoelectric detector, an early warning Internet of Things system and a working method, adopts an Nb3Se12I semiconductor material and constructs a quasi-one-dimensional nanowire structure, overcomes the defects that a traditional photoelectric detector works at normal temperature, and the performance of the traditional photoelectric detector is reduced along with temperature rise, and improves the performance of the early warning Internet of Things system. The material has excellent thermal stability and electronic structure characteristics, and can maintain and even enhance photoelectric response in a high-temperature environment. The quasi-one-dimensional nanowire structure improves the specific surface area and the carrier migration efficiency, and further enhances the photoelectric conversion performance under thermal excitation; the interdigital electrode structure provides a high-sensitivity signal acquisition capability, has strong adaptability, and is convenient for integration and mass production. Finally, when the temperature rises, the performance of the detector does not decline, but the response is enhanced, and the detector is especially suitable for intelligent early warning scenes in which temperature and illumination changes need to be monitored synchronously.
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