Organic photoelectrochemical synaptic transistor and preparation method and regulation and control method thereof

Abstract

The invention provides an organic photoelectrochemical synaptic transistor and a preparation method and a regulation and control method thereof, and belongs to the technical field of transistors. The transistor comprises a substrate, a gate electrode, a source electrode, a drain electrode, an organic semiconductor channel layer and an electrolyte layer; according to the invention, various synaptic plasticity functions can be realized on a single synaptic transistor device through a simple and efficient preparation process; the method has the advantages of simplicity, high efficiency and convenience in large-scale integration. The synergistic effect of photons, electrons and ions is used as a regulation and control mechanism, a single-component n-type organic semiconductor is used as a channel layer material, voltage programming pulses are applied to a grid electrode, light irradiation is applied to a channel layer to simulate biological synaptic stimulation, output current is obtained at a source electrode and a drain electrode to simulate post-biological synaptic current, and the potential safety hazard is eliminated. Information encryption, compiling, hiding and recovery of the Morse code are simulated based on the output pulse current, and the method can be widely applied to the brain-like intelligence field of cognitive judgment with information double anti-counterfeiting encryption.

Description

Technical Field

[0001] This invention relates to the field of transistor technology, and in particular to an organic photoelectrochemical synaptic transistor and its preparation and control methods. Background Technology

[0002] Organic neuromorphic electronic devices, inspired by the human brain, can mimic the learning and memory functions of the central nervous system, demonstrating unprecedented application potential in brain-computer interfaces, neuroscience, and artificial intelligence. Due to their significant advantages in massive parallel processing capabilities, low operating voltage and power consumption, mechanical compliance, biocompatibility, and responsiveness to chemical signals, they are more competitive than traditional silicon-based electronic devices. Biological synapses are functional connections between neurons that transmit neurotransmitter signals; artificial synapses are the cornerstone for developing organic neuromorphic electronic devices to construct brain-like intelligent systems.

[0003] Organic electrochemical transistors (OECTs) have proven to be one of the most promising platforms for developing organic neuromorphic electronic devices because their basic principle is similar to the generation and transmission of electrical signals induced by ions / neurotransmitters in biological nervous systems, and they have advantages such as low power consumption.

[0004] However, most current organic neuromorphic devices are driven by electrical signals and rely on p-type organic semiconductor materials. Compared to electrical signals, light has advantages such as high bandwidth, low energy consumption, and low crosstalk. Furthermore, n-type organic semiconductor materials and devices lag far behind p-type in both quantity, variety, and performance. This imbalance severely hinders their development in areas such as large-scale integration and logic circuits. Therefore, developing n-type organic photoelectrochemical synaptic transistors and exploring their cutting-edge applications in brain-like intelligence and visual perception is of significant value and importance.

[0005] Furthermore, traditional optoelectronic synaptic devices for image pattern recognition primarily rely on synaptic arrays and photomasks displaying character patterns. For example, when light shines on a perforated mask with an "L"-shaped character, the transmitted light illuminates the synaptic array. Due to the difference in current across the synaptic devices caused by the photoresponse, the "L" character is formed. Multiple transistors forming a synaptic array can only represent one character, and different characters require different photomask patterns. This method is not only technologically complex and extremely inefficient, but it also remains at a rudimentary level of character image pattern recognition, failing to reach the level of brain-like intelligence for information encryption and judgment.

[0006] Therefore, there is an urgent need to develop an n-type organic photoelectrochemical synaptic transistor that can perform information encryption and judgment by simulating high-level cognitive functions of the brain, and which is simple and efficient in terms of process. Summary of the Invention

[0007] To address the shortcomings of existing technologies, this invention provides an organic photoelectrochemical synaptic transistor and its preparation and control methods. This invention achieves dual anti-counterfeiting encryption applications of Morse code information encryption, compilation, hiding, and recovery in a single transistor device by photoelectric synergistic control of synaptic plasticity. Moreover, this invention also has the advantages of being simple, efficient, and easy to integrate on a large scale.

[0008] The technical solution of the present invention is as follows: an organic photoelectrochemical synaptic transistor, comprising a substrate, a gate electrode, a source electrode, a drain electrode, an organic semiconductor channel layer, and an electrolyte layer; the gate electrode, the source electrode, and the drain electrode are disposed at different positions on the substrate, and an organic semiconductor channel layer is disposed on the upper surface of the source electrode and the drain electrode and in the gap between the source electrode and the drain electrode, and the organic semiconductor channel layer also extends partially to the substrate on both sides of the source electrode and the drain electrode;

[0009] The electrolyte layer covers the upper surface of the gate electrode and the organic semiconductor channel layer, and the electrolyte layer also extends partially to the substrate on both sides of the gate electrode and the organic semiconductor channel layer.

[0010] Preferably, the substrate is either soda-lime glass or quartz glass.

[0011] Preferably, the gate electrode, source electrode, and drain electrode are chromium or gold electrodes.

[0012] Preferably, the organic semiconductor channel layer is an n-type organic mixed ion-electron conductor thin film.

[0013] Preferably, the n-type organic mixed ion-electron conductor thin film is made of any one of bgTNR-3OT, bgTNR-3DT, or bgTNR-5OP.

[0014] Preferably, the electrolyte layer is an ionogel electrolyte layer; the thickness of the ionogel electrolyte layer is 1-2 mm.

[0015] Preferably, the ionogel electrolyte layer is made of any one of the following materials: sodium chloride gel, sodium citrate gel, or lithium bis(trifluoromethanesulfonyl)imide gel.

[0016] Preferably, the present invention also provides a method for fabricating an organic photochemical synaptic transistor, comprising the following steps:

[0017] S1) The substrate is ultrasonically cleaned, and the gate electrode, source electrode and drain electrode are deposited on the substrate surface by patterning with a mask.

[0018] S2) Spin-coat an n-type organic mixed ionic electronic conductor solution onto the surfaces of the source and drain electrodes to form an organic semiconductor channel layer;

[0019] S3) An ion gel electrolyte layer is coated on the surface of the gate electrode and the organic semiconductor channel layer to obtain the organic photoelectrochemical synaptic transistor.

[0020] Preferably, in step S1), the substrate is either soda-lime glass or quartz glass.

[0021] The mask pattern is one or more of the following: parallel or interdigitated patterns;

[0022] The gate electrode, source electrode, and drain electrode are chromium or gold electrodes, wherein the thickness of the chromium electrode is 10 nm, and the thickness of the gold electrode is 50–150 nm.

[0023] Preferably, in step S2), the spin coating speed is 500-3000 rpm.

[0024] Preferably, in step S2), the n-type organic mixed ionic electron conductor solution is a mixed solution of electron conductor and solvent; the concentration of the n-type organic mixed ionic electron conductor solution is 1-15 mg / mL.

[0025] Preferably, in step S2), the electron conductor in the n-type organic mixed ionic electron conductor solution is any one of bgTNR-3OT, bgTNR-3DT, and bgTNR-5OP; and the solvent is one or a mixture of chloroform, toluene, hexafluoroisopropanol, and perfluorotert-butanol.

[0026] Preferably, in step S3), the thickness of the ionogel electrolyte layer is 1-2 mm; and the concentration of the ionogel electrolyte layer is 0.1-0.5 mol / L.

[0027] Preferably, in step S3), the ion gel electrolyte is any one of sodium chloride gel, sodium citrate gel, or lithium bis(trifluoromethanesulfonyl)imide gel.

[0028] As a preferred embodiment, the present invention also provides a method for regulating an organic photoelectrochemical synaptic transistor. The method regulates the gate voltage and the illumination conditions of the organic semiconductor channel layer to output a photoelectrochemical response current at the source and drain electrodes to represent the synaptic current after biological excitability, thereby achieving biomimetic synaptic plasticity regulation. Based on the output pulse current, it simulates the information encryption, compilation, hiding, and recovery of Morse code.

[0029] Preferably, the gate voltage is -2.0 to 2.0V, and the illumination conditions for the organic semiconductor channel layer are: illumination wavelength of 400 to 1000 nm and illumination intensity of 0.1 to 40 mW / mm². 2 .

[0030] Preferably, the synaptic plasticity regulation is: discharge time-dependent plasticity (STDP), pulse voltage-dependent plasticity (SVDP), short-term plasticity (STP), long-term plasticity (LTP), experiential learning behavior, and long-term facilitator-inhibitor (LTP / D) regulation.

[0031] Preferably, the long-term promoting-inhibiting LTP / D regulation outputs a spike pulse ripple composed of dots and horizontal lines according to the programmed control of the gate voltage, simulating a Morse code pattern; it is adjusted according to the light wavelength and intensity to generate Morse code patterns with different brightness, thereby realizing the hiding and recovery of information.

[0032] The beneficial effects of this invention are as follows:

[0033] 1. The present invention adopts a planar device structure, which is simple to fabricate. All parts are made of solid-state components, which is convenient for large-scale integration. It does not require complex photolithography technology and a large number of device arrays. Multiple synaptic plasticity functions can be realized on a single synaptic transistor device.

[0034] 2. The transistor of the present invention achieves dual anti-counterfeiting measures for Morse code information encryption, compilation, hiding and recovery through gate voltage pulse programming and light adjustment, and has the advantages of being simple, efficient and easy to integrate on a large scale. Attached Figure Description

[0035] Figure 1 This is a schematic diagram of the structure of the organic electrochemical synaptic transistor of Embodiment 1 of the present invention;

[0036] Figure 2 This is a schematic diagram illustrating the experiential learning behavior of an organic electrochemical synaptic transistor prepared in Example 2 of the present invention, simulating the biological synapse.

[0037] Figure 3 This is a schematic diagram of the simulated Morse code pattern of the organic electrochemical synaptic transistor prepared in Example 2 of the present invention;

[0038] Figure 4 This is a schematic diagram illustrating the information encryption, compilation, hiding, and recovery of the Morse code of the organic electrochemical synaptic transistor prepared in Example 2 of the present invention.

[0039] In the figure, 1-substrate; 2-gate electrode; 3-drain electrode; 4-source electrode; 5-organic semiconductor channel layer; 6-electrolyte layer. Detailed Implementation

[0040] The specific embodiments of the present invention will be further described below with reference to the accompanying drawings:

[0041] Example 1

[0042] like Figure 1As shown, this embodiment provides an organic photoelectrochemical synaptic transistor. The organic photoelectrochemical synaptic transistor has a planar structure, including a substrate 1, a gate electrode 2, a source electrode 4, a drain electrode 3, an organic semiconductor channel layer 5, and an electrolyte layer 6. The gate electrode 2, the source electrode 4, and the drain electrode 3 are disposed at different positions on the substrate 1. The organic semiconductor channel layer 5 is disposed on the upper surface of the source electrode 4 and the drain electrode 3, as well as in the gap between the source electrode 4 and the drain electrode 3. The organic semiconductor channel layer 5 also extends partially to the substrate 1 on both sides of the source electrode 4 and the drain electrode 3.

[0043] The electrolyte layer 6 covers the upper surface of the gate electrode 2 and the organic semiconductor channel layer 5, and the electrolyte layer 6 also extends partially to the substrate 1 on both sides of the gate electrode 2 and the organic semiconductor channel layer 5.

[0044] In this preferred embodiment, the substrate 1 is either soda-lime glass or quartz glass.

[0045] In this preferred embodiment, the gate electrode 2, source electrode 4, and drain electrode 3 are all made of chromium and gold electrodes.

[0046] In a preferred embodiment, the organic semiconductor channel layer 5 is an n-type organic mixed ion-electron conductor thin film. The n-type organic mixed ion-electron conductor thin film is made of any one of bgTNR-3OT, bgTNR-3DT, and bgTNR-5OP materials.

[0047] In a preferred embodiment, the electrolyte layer 6 is an ionogel electrolyte layer 6; the thickness of the ionogel electrolyte layer 6 is 1-2 mm. The ionogel electrolyte layer 6 is made of any one of the following materials: sodium chloride gel, sodium citrate gel, or lithium bis(trifluoromethanesulfonyl)imide gel.

[0048] Example 2

[0049] This embodiment provides a method for fabricating an organic photochemical synaptic transistor, comprising the following steps:

[0050] S1) The soda-lime glass substrate 1 was ultrasonically cleaned for 30 minutes each in acetone, anhydrous ethanol and deionized water, and then dried with a nitrogen gun.

[0051] S2) Fix the mask onto the substrate 1. The cutout pattern reserves the positions of the gate electrode 2, source electrode 4 and drain electrode 3. The source and drain electrodes 3 are placed in parallel with a width of 200um. Electron beam thermal evaporation is used to sequentially deposit a 10nm chromium electrode and a 100nm gold electrode.

[0052] S3) Prepare a 10 mg / mL bgTNR-3OT solution with hexafluoroisopropanol as the solvent. Then, spin coat the bgTNR-3OT thin film on the surface of the source electrode 4 and the drain electrode 3 at a speed of 500 rpm for 5 s and 1000 rpm for 30 s respectively to form an organic semiconductor channel layer 5; and wipe off the excess.

[0053] S4) A sodium citrate gel with a concentration of 0.2 mol / L and a thickness of 1 mm is applied to the gate electrode 2 and an ion gel electrolyte layer 6 is formed on the surface of the gate electrode 2 and the organic semiconductor channel layer 5 to obtain the organic photoelectrochemical synaptic transistor.

[0054] Example 3

[0055] This embodiment provides a method for fabricating an organic photochemical synaptic transistor, comprising the following steps:

[0056] S1) The soda-lime glass substrate 1 was ultrasonically cleaned for 30 minutes each in acetone, anhydrous ethanol and deionized water, and then dried with a nitrogen gun.

[0057] S2) Fix the mask onto the substrate 1. The cutout pattern reserves the positions of the gate electrode 2, source electrode 4 and drain electrode 3. The source electrode 4 and drain electrode 3 are placed in parallel with a width of 100um. Electron beam thermal evaporation is used to sequentially deposit a 10nm chromium electrode and a 120nm gold electrode.

[0058] S3) Prepare a 5 mg / mL bgTNR-5OP solution with chloroform as the solvent, and then spin-coat at 500 rpm for 5 s and 1000 rpm for 30 s respectively to deposit a bgTNR-5OP thin film on the surface of the source electrode 4 and the drain electrode 3 to form an organic semiconductor channel layer 5; and wipe off the excess.

[0059] S4) A sodium chloride gel with a concentration of 0.1 mol / L and a thickness of 1.5 mm is applied to the gate electrode 2 and an ion gel electrolyte layer 6 is formed on the surface of the gate electrode 2 and the organic semiconductor channel layer 5 to obtain the organic photoelectrochemical synaptic transistor.

[0060] Example 4

[0061] This embodiment provides a method for regulating an organic photoelectrochemical synaptic transistor. Using the organic photoelectrochemical synaptic transistor prepared in Example 2, and employing a Keysight B2612, the method controls the gate voltage and the illumination conditions of the organic semiconductor channel layer 5 to output a photoresponse current at the source electrode 4 and drain electrode 3. This output current represents the post-excitation synaptic current, achieving biomimetic synaptic plasticity regulation. The output pulse current is used to simulate the encryption, compilation, hiding, and recovery of Morse code information. Specifically, the method is as follows:

[0062] Simulating the experiential learning behavior of biological synapses:

[0063] like Figure 2 As shown, 64 consecutive promoting pulses with a gate voltage of 1.8V were applied to the synaptic transistor prepared in Example 2; then 64 consecutive inhibiting pulses with a gate voltage of -1.5V were applied; the learning and forgetting process of the biological synaptic system under dark conditions was simulated, and then the same pulse conditions were applied three times.

[0064] Simultaneously, the organic semiconductor channel layer 5 was illuminated under a 785nm laser with an illumination intensity of 17.6mW / mm. 2 The study simulated the learning and forgetting processes of biological synaptic systems under illumination, and then performed three times under the same pulse conditions. Compared to the dark conditions, the wavelength was 785 nm and the intensity was 17.6 mW / mm². 2 Under laser irradiation, the learning time for simulated experiential learning behaviors is shortened.

[0065] Simulated Morse code pattern:

[0066] like Figure 3 As shown, 64 consecutive promoting pulses with a gate voltage of 1.8V were applied to the synaptic transistor prepared in Example 2; then 64 consecutive suppressing pulses with a gate voltage of -1.4V were applied, forming a pulse pattern with a spike as a horizontal short line (-); then 64 consecutive promoting pulses with a gate voltage of 1.8V were applied; then 64 consecutive suppressing pulses with a gate voltage of -1.4V were applied, forming a pulse pattern with a spike as a dot (.); then two more pulses with spikes as horizontal short lines (-) were applied, forming a pulse train pattern with spikes as -.--, simulating the Morse code "Y" character.

[0067] Morse code information encryption, compilation, hiding, and recovery:

[0068] like Figure 4 As shown, under dark conditions, 64 consecutive promoting pulses with a gate voltage of 1.8V were applied to the synaptic transistor prepared in Example 2; then 64 consecutive suppressing pulses with a gate voltage of -1.4V were applied, forming a pulse pattern with a dot (.) peak; then two more dot (.) peaks were applied to form a pulse train pattern with a … peak, simulating the Morse code “S” character; then at a wavelength of 785nm and an intensity of 1.76mW / mm 2 and 17.6mW / mm 2Under laser irradiation, pulse trains with the same gate voltage conditions are arranged to form a pattern with peaks of… to simulate the Morse code “S” character under different light intensities. Increasing the light intensity can improve the photoresponse current (EPSC). The Morse code “S” character was simulated under different conditions (darkness or illumination), and the different EPSC values ​​were normalized and assigned grayscale values. Therefore, in darkness, the Morse code “S” character is displayed as white with the smallest grayscale value, thus hiding the Morse code character. At a wavelength of 785nm and an intensity of 17.6mW / mm², the… 2 Under laser illumination, the Morse code "S" character is displayed as black with the highest grayscale value, thus realizing the display of Morse code characters.

[0069] Example 5

[0070] This embodiment provides a method for regulating an organic photoelectrochemical synaptic transistor. This embodiment uses the organic photoelectrochemical synaptic transistor prepared in Example 3. Using a Keysight B2612, by controlling the gate voltage and the illumination conditions of the organic semiconductor channel layer 5, the photoelectric response current output at the source electrode 4 and drain electrode 3 represents the synaptic current after biological excitation, achieving biomimetic synaptic plasticity regulation. Based on the output pulse current, it simulates the encryption, compilation, hiding, and recovery of Morse code information; specifically as follows:

[0071] Simulating the experiential learning behavior of biological synapses:

[0072] Sixty-four consecutive promoting pulses (gate voltage of 1.8V) and sixty-four consecutive inhibiting pulses (gate voltage of -1.5V) were applied to the organic photoelectrochemical synaptic transistor of Example 3 to simulate the learning and forgetting process of a biological synaptic system under dark conditions. This process was repeated three times under the same pulse conditions. Simultaneously, the channel layer was illuminated with a laser at a wavelength of 532nm and an illumination intensity of 17.6mW / mm. 2 The learning and forgetting processes of biological synaptic systems under illumination were simulated, and then repeated three times under the same pulse conditions. Compared to the dark conditions, the wavelength was 532 nm and the intensity was 17.6 mW / mm. 2 Under laser irradiation, the learning time for simulated experiential learning behaviors is shortened.

[0073] Simulated Morse code pattern:

[0074] The organic photochemical synaptic transistor of Example 3 was subjected to 64 consecutive promoting pulses (gate voltage of 1.8V) and 64 consecutive suppressing pulses (gate voltage of -1.4V) to form a pulse pattern with a spike as a horizontal short line (-). Then, 64 consecutive promoting pulses (gate voltage of 1.8V) and 64 consecutive suppressing pulses (gate voltage of -1.4V) were applied to form a pulse pattern with a spike as a dot (.). Then, two more pulses with spikes as horizontal short lines (-) were applied to form a pulse train pattern with a spike as -.--, simulating the Morse code "Y" character.

[0075] Morse code information encryption, compilation, hiding, and recovery:

[0076] Under dark conditions, 64 consecutive promoting pulses (gate voltage 1.8V) and 64 consecutive suppressing pulses (gate voltage -1.4V) were applied to the organic photochemical synaptic transistor of Example 3 to form a pulse pattern with spikes as dots (.). Then, two more pulses with spikes as dots (.) were applied to form a pulse train pattern with spikes as …, simulating the Morse code character “S”. Then, at a wavelength of 532nm and an intensity of 1.76mW / mm²,… 2 and 17.6mW / mm 2 Under laser irradiation, pulse trains with the same gate voltage conditions are arranged to form a pattern with peaks of… to simulate the Morse code “S” character under different light intensities. Increasing the light intensity can improve the photoresponse current (EPSC). The Morse code “S” character was simulated under different conditions (darkness or illumination), and the different EPSC values ​​were normalized and assigned grayscale values. Therefore, in darkness, the Morse code “S” character is displayed as white with the smallest grayscale value, thus hiding the Morse code character. At a wavelength of 532nm and an intensity of 17.6mW / mm², the… 2 Under laser illumination, the Morse code "S" character is displayed as black with the highest grayscale value, thus realizing the display of Morse code characters.

[0077] The embodiments and descriptions above are merely illustrative of the principles and preferred embodiments of the present invention. Various changes and modifications may be made to the present invention without departing from its spirit and scope, and all such changes and modifications fall within the scope of the present invention as claimed.

Claims

1. An organic photochemical synaptic transistor, characterized in that: It includes a substrate (1), a gate electrode (2), a source electrode (4), a drain electrode (3), an organic semiconductor channel layer (5), and an electrolyte layer (6); the gate electrode (2), the source electrode (4), and the drain electrode (3) are disposed at different positions on the substrate (1), and the organic semiconductor channel layer (5) is disposed on the upper surface of the source electrode (4) and the drain electrode (3) and in the gap between the source electrode (4) and the drain electrode (3), and the organic semiconductor channel layer (5) also extends to the substrate (1) on both sides of the source electrode (4) and the drain electrode (3); The electrolyte layer (6) covers the upper surface of the gate electrode (2) and the organic semiconductor channel layer (5), and the electrolyte layer (6) also extends partially to the substrate (1) on both sides of the gate electrode (2) and the organic semiconductor channel layer (5). The organic semiconductor channel layer (5) is an n-type organic mixed ion-electron conductor thin film; the n-type organic mixed ion-electron conductor thin film is made of any one of bgTNR-3OT, bgTNR-3DT, and bgTNR-5OP.

2. The organic photochemical synaptic transistor according to claim 1, characterized in that: The electrolyte layer (6) is an ion gel electrolyte layer (6); the thickness of the ion gel electrolyte layer (6) is 1-2 mm.

3. The organic photochemical synaptic transistor according to claim 2, characterized in that: The ion gel electrolyte layer (6) is made of any one of the following materials: sodium chloride gel, sodium citrate gel, or lithium bis(trifluoromethanesulfonyl)imide gel.

4. A method for fabricating an organic photoelectrochemical synaptic transistor, characterized in that, Includes the following steps: S1) The substrate (1) is ultrasonically cleaned, and the gate electrode (2), source electrode (4) and drain electrode (3) are deposited on the surface of the substrate (1) by evaporation using a mask pattern. S2) A layer of n-type organic mixed ionic electron conductor solution is spin-coated on the surface of the source electrode (4) and the drain electrode (3) to form an organic semiconductor channel layer (5); S3) An ion gel electrolyte layer (6) is coated on the surface of the gate electrode (2) and the organic semiconductor channel layer (5) to obtain the organic photoelectrochemical synaptic transistor.

5. The method for fabricating an organic photoelectrochemical synaptic transistor according to claim 4, characterized in that: In step S2), the n-type organic mixed ionic electron conductor solution is a mixed solution of electron conductor and solvent; the concentration of the n-type organic mixed ionic electron conductor solution is 1-15 mg / mL. The electron conductor in the n-type organic mixed ionic electron conductor solution is any one of bgTNR-3OT, bgTNR-3DT, and bgTNR-5OP; the solvent is one or more of chloroform, toluene, hexafluoroisopropanol, and perfluorotert-butanol.

6. The method for fabricating an organic photoelectrochemical synaptic transistor according to claim 4, characterized in that: In step S3), the thickness of the ion gel electrolyte layer (6) is 1-2 mm; the concentration of the ion gel electrolyte layer (6) is 0.1-0.5 mol / L; wherein the ion gel electrolyte is any one of sodium chloride gel, sodium citrate gel, or lithium bis(trifluoromethanesulfonyl)imide gel.

7. A method for controlling an organic photoelectrochemical synaptic transistor, characterized in that: The method described above uses the gate voltage and the illumination conditions of the organic semiconductor channel layer (5) to output photoelectric response current at the source electrode (4) and drain electrode (3) to represent the biological excitatory synaptic current, thereby realizing the biomimetic synaptic plasticity regulation and simulating the information encryption, compilation, hiding and recovery of Morse code based on the output pulse current.

8. The method for controlling an organic photoelectrochemical synaptic transistor according to claim 7, characterized in that: The gate voltage is -2.0 to 2.0V, and the illumination conditions for the organic semiconductor channel layer (5) are: illumination wavelength of 400 to 1000 nm and illumination intensity of 0.1 to 40 mW / mm. 2 .

9. The method for controlling an organic photoelectrochemical synaptic transistor according to claim 7, characterized in that: The synaptic plasticity regulation is as follows: discharge time-dependent plasticity (STDP), pulse voltage-dependent plasticity (SVDP), short-term plasticity (STP), long-term plasticity (LTP), experience-based learning behavior, and long-term facilitator-inhibitor LTP / D regulation.

10. The method for controlling an organic photoelectrochemical synaptic transistor according to claim 9, characterized in that: The long-term promoting-inhibiting LTP / D outputs a spike pulse ripple composed of dots and horizontal lines according to the programmed control of the gate voltage, simulating a Morse code pattern; it is adjusted according to the light wavelength and intensity to generate Morse code patterns with different brightness.

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