PVD (Physical Vapor Deposition) equipment capable of realizing Cu in-situ reflux and redeposition and control method thereof

Abstract

The invention discloses PVD equipment capable of achieving in-situ backflow and redeposition of Cu and a control method thereof.The PVD equipment comprises a first transfer cavity and a second transfer cavity, the two sides of the first transfer cavity are each sequentially provided with an integrated cavity, a pre-cleaning cavity, a retreatment process cavity and an in-situ backflow composite treatment cavity, and the periphery of the second transfer cavity is provided with a plurality of process cavities; a first heating module, a cavity water cooling channel, a wafer supporting frame and a lifting rotating mechanism are arranged in the integrated cavity, and three wafer placing positions are arranged in the integrated cavity; the lifting rotating mechanism can drive the wafer supporting frame to move among the three wafer placing positions; the in-situ backflow composite processing cavity comprises a cooling chassis, a supporting mechanism and a second heating module, and the supporting mechanism is used for supporting a wafer, has rotating and up-and-down moving functions and is provided with three wafer placing positions in the up-and-down moving direction. According to the method, the problems of micro-hole and seam defects, non-uniform side wall coverage and the like in a copper interconnection film deposition high aspect ratio structure can be solved.

Description

Technical Field

[0001] This invention relates to a PVD (physical vapor deposition) device and its preparation method, and more particularly to a PVD device and its control method that enables in-situ reflux and redeposition of Cu. Background Technology

[0002] Traditional PVD equipment adopts an independent functional chamber design, including a loading chamber, a heating and degassing chamber, a pre-cleaning chamber, a process chamber, and a cooling chamber. The wafer transfer path in its standard process flow is: input → loading chamber → heating and degassing chamber → pre-cleaning chamber → process chamber → cooling chamber → loading chamber → output; the standard process flow is: wafer loading → heating and degassing → plasma pre-cleaning → thin film deposition → cooling → wafer output.

[0003] In semiconductor manufacturing, the traditional PVD copper seed layer deposition process, such as Figure 1 As shown, a SiO2 layer is first deposited on a silicon wafer (①SiO2 layer growth), then the deposition channels for the copper thin film are etched (②Cu channel etching), and a thin Ta / TaN barrier layer is grown on the channel surface to prevent copper diffusion (③Ta / TaN layer). When depositing copper thin films using conventional PVD equipment, uneven sidewall coverage is prone to occur in high aspect ratio deposition channels, leading to voids or seam defects (④copper deposition). In existing technologies, most solutions do not address the defects generated after copper thin film deposition in situ, but instead directly transfer them to subsequent processes after cooling, affecting the effect of subsequent processes (such as electroplating), thus leading to a decrease in wafer thin film quality and yield. Some solutions perform batch annealing of the wafer after PVD, but annealing is separated from deposition, which can lead to vacuum breakage and makes it impossible to specifically repair local defects. Summary of the Invention

[0004] The technical problem to be solved by the present invention is to provide a PVD equipment and control method that can realize in-situ reflux and redeposition of Cu, which can solve problems such as micropores and seam defects, uneven sidewall coverage in its high aspect ratio structure.

[0005] The technical solution adopted by this invention to solve the above-mentioned technical problems is to provide a PVD equipment capable of in-situ Cu reflow and redeposition, including a first transfer chamber and a second transfer chamber. An integrated chamber, a pre-cleaning chamber, a reprocessing chamber, and an in-situ reflow composite processing chamber are sequentially arranged on both sides of the first transfer chamber. Several process chambers are arranged around the second transfer chamber. The in-situ reflow composite processing chamber is located between the first and second transfer chambers. The integrated chamber is equipped with a first heating module, a chamber water-cooling channel, a wafer support frame, and a lifting and rotating mechanism. The integrated chamber has three wafer placement positions: a first heating position, a first wafer transfer position, and a first cooling position. The lifting and rotating mechanism can move the wafer support frame between the three wafer placement positions. The in-situ reflow composite processing chamber includes a cooling base, a support mechanism, and a second heating module. The support mechanism supports the wafer and has rotation and vertical movement functions, and is equipped with three wafer placement positions in the vertical movement direction: a second heating position, a second wafer transfer position, and a second cooling position.

[0006] Furthermore, the integrated cavity is designed as a single unit comprising a loading cavity, a heating and degassing cavity, and a cooling cavity. The integrated cavity includes a first cavity body; a cavity cover is provided above the first cavity body, and the first heating module is installed and fixed on the cavity cover; a quartz plate is fixed inside the first heating module and the first cavity body, and the quartz plate, the quartz mounting base, and the first cavity body form a first vacuum environment inside the cavity body, and the quartz plate, the cavity cover, and the quartz cover plate form a second vacuum environment inside the cavity body.

[0007] Furthermore, the first transfer position is determined according to the extendable position of the robot arm at the transfer cavity, the first heating position is located between the first heating module and the first transfer position, and the first cooling position is located near the water cooling channel of the cavity below the cavity; the second transfer position is determined according to the extendable position of the robot arm at the transfer cavity, the second heating position is located between the second heating module and the second transfer position, and the second cooling position is located on the upper surface of the cooling chassis.

[0008] Furthermore, the upper end of the support mechanism is a ring and equipped with circumferentially distributed support points to support the wafer, and the inner diameter of the ring is larger than the outer diameter of the cooling base.

[0009] Furthermore, the second heating module is an infrared heating module, an RF induction heating module, a resistance wire heating module, or a high-temperature gas heating module. For RF induction heating or resistance wire heating, the second heating position is located on the surface of the RF induction heating plate or the resistance wire heating plate.

[0010] To solve the above-mentioned technical problems, this invention also provides a control method for the above-mentioned PVD equipment capable of in-situ Cu reflow and redeposition, comprising the following steps: S1, Wafer heating and degassing: The wafer is transferred to the first transfer position of the integrated cavity and moved to the first heating position by a lifting and rotating mechanism. During the movement, the cavity is simultaneously evacuated and the first heating module is turned on for heating and degassing. After heating and degassing is completed, the first heating module is turned off, and the wafer is moved back to the first transfer position by the lifting and rotating mechanism. The channel between the integrated cavity and the first transfer cavity is opened, and the wafer is transferred to the first transfer cavity; S2, Wafer pre-cleaning: The wafer is transferred from the first transfer cavity to the pre-cleaning cavity for plasma pre-cleaning to clean the wafer surface for 12-16 seconds, and then transferred to the first transfer cavity; S3, Wafer transfer: The wafer is transferred from the first transfer cavity to the in-situ reflow composite processing cavity, and then transferred to the second transfer cavity through the second transfer position, and then enters the process cavity; S4, Wafer Cu thin film deposition: Cu thin film deposition is performed on the wafer in the process cavity. S5. Wafer Cu Thin Film Reflow: The wafer is transferred from the second transfer chamber to the in-situ reflow composite processing chamber. The second heating module is activated while the chamber is evacuated, causing the wafer to rapidly heat up to the reflow temperature. S6. Wafer Cooling: The support mechanism in the in-situ reflow composite processing chamber is moved downwards to below the cooling chassis. The wafer is placed in the second cooling position on the cooling chassis. Water is circulated inside the cooling chassis to cool the wafer until the temperature is <100℃. The support mechanism moves upward to move the wafer to the second transfer position, and then the wafer is transferred out of the in-situ reflow composite processing cavity and arrives at the first transfer cavity; S7, wafer secondary deposition: the wafer is transferred from the first transfer cavity to the reprocessing cavity for secondary deposition of copper thin film; S8, wafer secondary cooling: the wafer after secondary deposition is transferred through the first transfer cavity into the integration cavity to cool the wafer to below 100°C; S9, wafer transfer: after secondary cooling, the wafer is moved from the first cooling position to the first transfer position and transferred out of the entire PVD equipment.

[0011] Furthermore, in step S1, the chamber is simultaneously evacuated to 5-7 torr during the movement process. The first heating module uses an infrared radiation lamp array that can rapidly heat up and cool down, so that the wafer is heated to 300°C within 10 seconds and maintained at 300°C for heating and degassing. After the heating and degassing is completed, the first heating module is turned off, and the chamber is evacuated to ≤1×10^-6 torr.

[0012] Further, step S5 includes: first, the wafer is transferred from the second transfer cavity to the second wafer transfer position of the in-situ reflow composite processing cavity, then the support mechanism moves upward and the wafer enters the second heating position, while the cavity is evacuated to 5~7 torr and the second heating module is turned on; during the reflow process, the temperature of the wafer surface is monitored in real time by the temperature monitoring system, and the power of the heating module is controlled in real time by the PLC to adjust the wafer surface temperature.

[0013] Furthermore, in step S5, for films <30nm, the reflow temperature is 200~300℃ and the heating time is 20~40s; for films ≥30nm, the reflow temperature is 300~400℃ and the heating time is 50~70s.

[0014] Further, step S8 includes: after secondary deposition, the wafer is transferred from the first wafer transfer position to the first cooling position in the integrated cavity through a lifting and rotating mechanism. The first cavity is filled with gas to atmospheric pressure, and at the same time the gas flow channel and the lower water cooling channel are opened. The gas flow rate is between 150 and 200 SLM, and the water cooling flow rate is between 5 and 10 L / min, so that the wafer is cooled to below 100°C within 30 seconds.

[0015] Compared with the prior art, the present invention has the following beneficial effects: The PVD equipment and control method provided by the present invention, which can realize Cu in-situ reflow and redeposition, has Cu in-situ reflow function and realizes full vacuum continuous processing of deposition-reflow-secondary deposition, which improves film quality, increases wafer yield and extends device life without breaking vacuum. Attached Figure Description

[0016] Figure 1 Here is a flow chart of the existing Cu thin film deposition process; Figure 2 This is a schematic diagram of the PVD equipment structure that enables in-situ Cu reflux and redeposition according to the present invention. Figure 3 This is a schematic diagram of the basic structure of the integrated cavity of the present invention; Figure 4 This is a schematic diagram of the basic structure of the in-situ reflux composite treatment cavity of the present invention; Figure 5 This is a schematic diagram illustrating the Cu thin film reflow and deposition effect of the present invention.

[0017] The diagram is labeled as follows: 1 / 1', Integrated cavity; 2 / 2', Pre-cleaning cavity; 3 / 3', Reprocessing cavity; 4 / 4', Process cavity; 5, First transfer cavity; 5', Second transfer cavity; 6 / 6', In-situ reflow composite processing cavity; 7, First cavity; 8, Wafer support frame; 9, Wafer; 10, Quartz plate; 11, Quartz mounting base; 12, Quartz cover plate; 13, Cavity top cover; 14, First heating module; 15, Cavity water cooling channel; 16, Lifting and rotating mechanism; 17, Slider; 18, Motor; 19, First heating position; 20, First wafer transfer position; 21, First cooling position; 22, Cooling chassis; 23, Second cavity; 24, Support mechanism; 25, Second heating module; 26, Temperature monitoring system; 27, Second heating position; 28, Second wafer transfer position; 29, Second cooling position. Detailed Implementation

[0018] The present invention will now be further described with reference to the accompanying drawings and embodiments.

[0019] Figure 2 This is a schematic diagram of the PVD equipment structure that enables in-situ Cu reflux and redeposition according to the present invention.

[0020] Please see Figure 2 The PVD equipment provided by the present invention, which enables in-situ reflux and redeposition of Cu, includes an integrated chamber 1 / 1', a pre-cleaning chamber 2 / 2', a reprocessing chamber 3 / 3', a process chamber 4 / 4', a transfer chamber 5 / 5', and an in-situ reflux composite processing chamber 6 / 6'.

[0021] In this invention, the integrated cavity 1 / 1' integrates a loading cavity, a heating and degassing cavity, and a cooling cavity, thus combining the functions of load loading, heating and degassing, and cavity cooling. Its basic structure is as follows: Figure 3 As shown, the system includes a first cavity 7, a wafer support 8, a wafer 9, a quartz plate 10, a quartz mounting base 11, a quartz cover 12, a cavity top cover 13, a first heating module 14, a cavity water-cooling channel 15, a lifting and rotating mechanism 16, a slider 17, and a motor 18, and also includes three integrated wafer placement positions: a first heating position 19, a first wafer transfer position 20, and a first cooling position 21. The first wafer transfer position 20 is determined based on the extendable position of the robotic arm at the transfer cavity, preferably in the middle of the first cavity 7; the first heating position 19 is located between the first heating module 14 and the first wafer transfer position 20, preferably in the middle of the first heating module 14 and the first wafer transfer position 20; the first cooling position 21 is selected as the position closest to the cavity water-cooling channel 15 at the bottom of the cavity. During the wafer cooling process, the first cavity 7 is simultaneously cooled by gas and water. The wafer 9 and the wafer support 8 are moved and changed at the three placement positions via the lifting and rotating mechanism 16. The first cavity 7 has a cavity cover 13 on top, which is used to install and fix the first heating module 14 (such as an infrared lamp array); a quartz plate 10 is fixed between the first heating module 14 and the inside of the first cavity 7, preferably a transparent quartz with a transmittance of ≥93%. The quartz plate 10, the quartz mounting base 11 and the first cavity 7 form the first vacuum environment inside the cavity, reducing the space size of the vacuum environment where the wafer 9 is located, reducing the internal filling and evacuation time, and improving efficiency.

[0022] In this invention, the reprocessing chamber 3 / 3' is a process chamber for secondary Cu deposition after in-situ reflow. It is used to continue growing a simple thin film after in-situ reflow to further improve the film quality. Its basic structure is consistent with the process chamber in traditional PVD equipment.

[0023] In this invention, the in-situ reflux composite processing chamber 6 / 6' is a modification of the cooling chamber in a traditional PVD equipment, enabling it to perform both in-situ reflux and cooling functions. The modification involves adding a heating module to the existing cooling chassis within the traditional cooling chamber. This module includes, but is not limited to, infrared heating, RF induction heating, resistance wire heating, and high-temperature gas heating, and is equipped with a corresponding temperature monitoring system. A schematic diagram of the basic structure of the in-situ reflux composite processing chamber is shown below. Figure 4 As shown, the system includes a cooling chassis 22, a second cavity 23, a support mechanism 24, a wafer 9, a second heating module 25, and a temperature monitoring system 26. The support mechanism 24 has rotational or vertical movement capabilities. Its upper end is a ring with circumferentially distributed support points to support the wafer. The inner diameter of the ring is larger than the outer diameter of the cooling chassis 22. The support mechanism 24 is equipped with corresponding second heating positions 27, second wafer transfer positions 28, and second cooling positions 29. The second wafer transfer position 28 is determined based on the extendable position of the robotic arm in the transfer cavity, preferably in the middle of the cavity. The second heating position 27 is located between the second heating module 25 and the second wafer transfer position 28, preferably in the middle of the second heating module 25 and the second wafer transfer position 29. For RF induction heating or resistance wire heating, the second heating position 27 is located on the surface of the heating plate. The second cooling position 29 is located on the upper surface of the cooling chassis 22.

[0024] The present invention further provides the process flow of this improved PVD equipment platform: Input → Integrated cavity 1 / 1' (first transfer position 20 → first heating position 19 → first transfer position 20) → first transfer cavity 5 → pre-cleaning cavity 2 / 2' → first transfer cavity 5 → in-situ reflow composite processing cavity 6 / 6' (second transfer position 28) → second transfer cavity 5' → process cavity 4 / 4' → second transfer cavity 5' → in-situ reflow composite processing cavity 6 / 6' (second transfer position 28 → second heating position 27 → second cooling position 29 → second transfer position 28) → first transfer cavity 5 → reprocessing process cavity 3 / 3' → first transfer cavity 5 → integrated cavity 1 / 1' (first transfer position 20 → first cooling position 21 → first transfer position 20) → output.

[0025] (1) Wafer heating and degassing: Wafer 9 is transferred to the first transfer position 20 of the integrated cavity and moved to the first heating position 19 by the lifting and rotating mechanism 16. During the movement, the cavity is simultaneously evacuated to 5~7 torr, and the first heating module 14 is turned on. Using an infrared radiation lamp array that can rapidly heat up and cool down, the wafer is heated to 300℃ within 10s and maintained at 300℃ for about 30s (heating and degassing). Then the first heating module 14 is turned off, and the cavity vacuum degree is continuously evacuated to ≤1×10^-6 torr. Wafer 9 is then moved back to the first transfer position 20 by the lifting and rotating mechanism 16. The channel between the integrated cavity and the first transfer cavity 5 is opened, and wafer 9 is transferred to the first transfer cavity 5.

[0026] (2) Wafer pre-cleaning: Wafer 9 is transferred from the first transfer cavity 5 to the pre-cleaning cavity 2 / 2' for plasma pre-cleaning to clean the surface of wafer 9 for about 12~16s, and then transferred to the first transfer cavity 5.

[0027] (3) Wafer transfer: Wafer 9 enters the in-situ reflow composite processing cavity 6 / 6' from the first transfer cavity 5, and is transferred to the second transfer cavity 5' through the second transfer position 28, and then enters the process cavity 4 / 4'.

[0028] (4) Wafer Cu thin film deposition: Cu thin film deposition is performed on wafer 9 in process cavity 4 / 4'. The surface effect of the wafer after deposition is as follows. Figure 5 As shown in a, the outer side of the wafer deposition trench has a sharp protrusion, the inner sidewall of the trench is unevenly covered, and there are holes and seam defects inside. The wafer 9 after thin film deposition is transferred from the process cavity to the second transfer cavity 5'.

[0029] (5) Wafer Cu Thin Film Reflow: Wafer 9 is transferred from the second transfer cavity 5' to the in-situ reflow composite processing cavity 6 / 6'. First, it is transferred to the second wafer transfer position 28, and then the support mechanism 24 moves upward, and wafer 9 enters the second heating position 27. At the same time, the cavity is evacuated to 5~7 torr and the second heating module 25 is turned on, and wafer 9 is rapidly heated to the reflow temperature. During the reflow process, the temperature of the wafer 9 surface can be monitored in real time by the temperature monitoring system 26, and the power of the heating module can be controlled in real time by the PLC to adjust the wafer surface temperature. During the reflow process, the reflow parameters are automatically matched and set according to the requirements by the host computer, PLC and temperature monitoring system 26. For example, for films <30nm, the reflow temperature is 200~300℃ and the heating time is about 20-40s, preferably 30s; for films ≥30nm, the reflow temperature is 300~400℃ and the heating time is about 50-70s, preferably 60s. The surface state of wafer 9 after in-situ reflow is as follows. Figure 5 As shown in b, Cu flows from the outside of the deposition trench channel into the trench. The Cu film on the outside of the channel is vacant, but the inside sidewall of the trench is uniformly covered, and the pores and seam defects are basically eliminated.

[0030] (6) Wafer cooling: The support mechanism 24 in the in-situ reflow composite processing cavity 6 / 6' moves down, and the wafer 9 moves from the second heating position 27 to the second cooling position 29. The support mechanism 24 continues to move down to below the cooling chassis 22, and the wafer 9 is placed on the cooling chassis 22. Water is circulated inside the cooling chassis 22 to cool the wafer 9. After cooling to a temperature <100℃, the support mechanism 24 moves up to move the wafer 9 to the second transfer position 28. Then the wafer 9 is transferred out of the in-situ reflow composite processing cavity 6 / 6' and arrives at the first transfer cavity 5.

[0031] (7) Secondary Wafer Deposition: Wafer 9 is transferred from the first transfer cavity 5 to the reprocessing cavity 3 / 3' for secondary copper film deposition. For copper deposition processes with a total thickness requirement of α nm, the initial deposition thickness on the outer side of the trench channel is generally about (α-10) nm, which decreases to (α-30~α-20) nm after reflow. Therefore, the relative secondary deposition thickness is generally set to (α-20~α-10) nm. For example, for copper deposition processes with a total thickness requirement of 40 nm, the initial deposition thickness on the outer side of the trench channel is generally about 30 nm, which decreases to 10~20 nm after reflow. Therefore, the relative secondary deposition thickness is generally set to 20~30 nm. The effect of the thin film on the wafer surface after secondary deposition is as follows: Figure 5 As shown in c, the Cu film gaps on the outside of the trench channel have been filled, and the Cu film coverage on the overall surface is uniform with no obvious defects.

[0032] (8) Secondary cooling of wafer: After secondary deposition, the wafer 9 is transferred to the integrated cavity 1 / 1' through the first transfer cavity 5. The wafer 9 is transferred from the first transfer position 20 to the first cooling position 21 through the lifting and rotating mechanism 16. The first cavity 7 is filled with gas to atmospheric pressure. At the same time, the gas flow channel and the lower water cooling channel are opened. The gas flow speed is between 150 and 200 SLM, and the water cooling flow rate is between 5 and 10 L / min. The time for the wafer 9 to cool to below 100°C is within 30 seconds.

[0033] (9) Wafer transfer: After the wafer 9 is cooled twice, it moves from the first cooling position 21 to the first transfer position 20 and is transferred out of the entire PVD system.

[0034] After this deposition-reflow-redeposition process, the aspect ratio range for excellent copper deposition can be increased from 4:1 to 8:1 and above.

[0035] Furthermore, the process parameters and process flow described above in this invention can be appropriately modified according to actual needs to achieve the best PVD process effect. For example, for trench depth-to-width ratios > 8:1, multi-stage reflow and secondary deposition cycles can be used to improve reflow and deposition effects. For example, customized reflow curves can be tailored for different thin film materials or different process requirements, and the reflow process can be controlled by a closed-loop temperature control system, including but not limited to staged reflow.

[0036] Furthermore, the temperature measurement method of the temperature monitoring system of the present invention is not limited to any temperature measuring instrument, including but not limited to infrared thermometers, thermocouples, optical pyrometers, thermal imagers, etc. The temperature monitoring method of the present invention is that the temperature measuring device monitors the surface temperature of the wafer in real time and feeds it back to the PLC. Through PID calculation, the input power of the heating module is adjusted in real time to approach and reach the required target temperature and maintain it for a certain holding time.

[0037] Furthermore, the location of the heating module of the present invention is not limited to the top of the cavity, and can be replaced with any other reasonable heating location, including but not limited to the side wall of the cavity, the bottom of the cavity, etc. The heating method of the present invention is not limited to infrared heating, but also includes but is not limited to resistance wire heating, electromagnetic induction heating, etc.

[0038] Furthermore, the rotation or vertical movement functions of the lifting and rotating mechanism 16 and the support mechanism 24 need to be realized through a precision mechanical transmission system, such as using a servo motor to drive a lead screw and nut mechanism or a gear and rack mechanism, to ensure the motion accuracy and stability of the support mechanism. The positional accuracy of the heating position, the plate transfer position, and the cooling position is crucial to the stability and repeatability of the process. During equipment installation and commissioning, high-precision measuring instruments (such as laser rangefinders, coordinate measuring machines, etc.) must be used for precise calibration to ensure that the error of each position is within the specified range (±0.1mm).

[0039] Furthermore, the PVD equipment of the present invention, which integrates in-situ reflow function, can be used not only for in-situ reflow of metal thin films (such as Cu), but also for in-situ annealing and other processing needs of metal thin films (such as Al, Cu).

[0040] Although the present invention has been disclosed above with reference to preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make some modifications and improvements without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be defined by the claims.

Claims

1. A PVD apparatus capable of in-situ Cu reflux and redeposition, characterized in that, The system includes a first transfer chamber (5) and a second transfer chamber (5'). The first transfer chamber (5) is arranged with an integrated chamber (1 / 1'), a pre-cleaning chamber (2 / 2'), a reprocessing chamber (3 / 3'), and an in-situ reflow composite processing chamber (6 / 6') on both sides. The second transfer chamber (5') is surrounded by several process chambers (4 / 4'). The in-situ reflow composite processing chamber (6 / 6') is located between the first transfer chamber (5) and the second transfer chamber (5'). The integrated chamber is provided with a first heating module (14), a chamber water cooling channel (15), a wafer support frame (8), and a lifting and rotating mechanism (16). The integrated chamber is provided with three wafer placement positions, namely a first heating position (19), a first wafer transfer position (20), and a first cooling position (21). The lifting and rotating mechanism (16) can move the wafer support frame (8) between the three wafer placement positions. The in-situ reflow composite processing cavity (6 / 6') includes a cooling chassis (22), a support mechanism (24), and a second heating module (25). The support mechanism (24) is used to support the wafer (9) and has rotation and up-down movement functions. It is equipped with three wafer placement positions in the up-down movement direction, namely the second heating position (27), the second wafer transfer position (28), and the second cooling position (29).

2. The PVD equipment as described in claim 1, capable of in-situ Cu reflux and redeposition, is characterized in that... The integrated cavity (1 / 1') is designed as an integrated loading cavity, heating and degassing cavity and cooling cavity. The integrated cavity includes a first cavity (7); a cavity cover (13) is provided above the first cavity (7), and the first heating module (14) is installed and fixed on the cavity cover (13); a quartz plate (10) is fixed inside the first heating module (14) and the first cavity (7). The quartz plate (10), the quartz mounting base (11) and the first cavity (7) form a first vacuum environment inside the cavity. The quartz plate (10), the cavity cover (13) and the quartz cover plate (12) form a second vacuum environment inside the cavity.

3. The PVD equipment as described in claim 1, capable of in-situ Cu reflux and redeposition, is characterized in that... The first transfer position (20) is determined according to the extendable position of the robot arm at the transfer cavity. The first heating position (19) is located between the first heating module (14) and the first transfer position (20). The first cooling position (21) is located near the water cooling channel (15) of the cavity below the cavity. The second transfer position (28) is determined according to the extendable position of the robot arm at the transfer cavity. The second heating position (27) is located between the second heating module (25) and the second transfer position (28). The second cooling position (29) is located on the upper surface of the cooling chassis (22).

4. The PVD equipment as described in claim 1, capable of in-situ Cu reflux and redeposition, is characterized in that... The upper end of the support mechanism (24) is a ring and is equipped with circumferentially distributed support points to support the wafer. The inner diameter of the ring is larger than the outer diameter of the cooling base (22).

5. The PVD equipment as described in claim 1, capable of in-situ Cu reflux and redeposition, characterized in that, The second heating module (25) is an infrared heating module, an RF induction heating module, a resistance wire heating module or a high-temperature gas heating module. For RF induction heating or resistance wire heating, the second heating position (27) is located on the surface of the RF induction heating plate or the resistance wire heating plate.

6. A control method for a PVD apparatus capable of in-situ Cu reflux and redeposition as described in any one of claims 1-5, characterized in that, Includes the following steps: S1. Wafer heating and degassing: The wafer (9) is transferred to the first transfer position (20) of the integrated cavity (1 / 1'), and moved to the first heating position (19) by the lifting and rotating mechanism (16). During the movement, the cavity is evacuated and the first heating module (14) is turned on for heating and degassing. After the heating and degassing is completed, the first heating module (14) is turned off, and the wafer (9) is moved back to the first transfer position (20) by the lifting and rotating mechanism (16). The channel between the integrated cavity (1 / 1') and the first transfer cavity (5) is opened, and the wafer (9) is transferred to the first transfer cavity (5). S2. Wafer pre-cleaning: The wafer (9) is transferred from the first transfer cavity (5) to the pre-cleaning cavity (2 / 2') for plasma pre-cleaning. The surface of the wafer (9) is cleaned for 12~16s, and then transferred to the first transfer cavity (5). S3, Wafer transfer: The wafer (9) enters the in-situ reflow composite processing cavity (6 / 6') from the first transfer cavity (5), and is transferred to the second transfer cavity (5') through the second transfer position (28), and then enters the process cavity (4 / 4'); S4. Wafer Cu thin film deposition: Wafer (9) is deposited with Cu thin film in process cavity (4 / 4'), and the wafer (9) after film deposition is transferred from process cavity to second transfer cavity (5'). S5, Wafer Cu Thin Film Reflow: The wafer (9) is transferred from the second transfer chamber (5') to the in-situ reflow composite processing chamber (6 / 6'), the second heating module (25) is turned on and the chamber is evacuated at the same time, so that the wafer (9) is heated to the reflow temperature quickly; S6. Wafer Cooling: Control the support mechanism (24) in the in-situ reflow composite processing cavity (6 / 6') to move down to below the cooling chassis (22). The wafer (9) is placed in the second cooling position (29) on the cooling chassis (22). Water is circulated inside the cooling chassis (22) to cool the wafer (9). After cooling to a temperature <100℃, the support mechanism (24) moves up to move the wafer (9) to the second transfer position (28). Then the wafer (9) is transferred out of the in-situ reflow composite processing cavity (6 / 6') and arrives at the first transfer cavity (5). S7. Secondary Wafer Deposition: The wafer (9) is transferred from the first transfer cavity (5) to the reprocessing cavity (3 / 3') for secondary copper film deposition. S8. Secondary cooling of wafer: After secondary deposition, the wafer (9) is transferred to the integrated cavity (1 / 1') through the first transfer cavity (5) to cool the wafer (9) to below 100°C; S9, Wafer Transfer: After the wafer (9) is cooled twice, it moves from the first cooling position (21) to the first transfer position (20) and is transferred out of the entire PVD equipment.

7. The control method as described in claim 6, characterized in that, In step S1, the chamber is simultaneously evacuated to 5-7 torr during the movement process. The first heating module (14) uses an infrared radiation lamp array that can rapidly heat up and cool down, so that the wafer (9) is heated to 300°C within 10s and maintained at 300°C for heating and degassing. After the heating and degassing is completed, the first heating module (14) is turned off, and the chamber is continuously evacuated to ≤1×10^-6 torr.

8. The control method as described in claim 6, characterized in that, Step S5 includes: first, the wafer (9) is transferred from the second transfer cavity (5') to the second transfer position (28) of the in-situ reflow composite processing cavity (6 / 6'), then the support mechanism (24) moves upward, the wafer (9) enters the second heating position (27), and at the same time, the cavity is evacuated to 5~7 torr and the second heating module (25) is turned on; during the reflow process, the temperature of the wafer (9) surface is monitored in real time by the temperature monitoring system (26), and the power of the heating module is controlled in real time by the PLC to adjust the wafer surface temperature.

9. The control method as described in claim 8, characterized in that, For films <30nm, step S5 involves a reflow temperature of 200~300℃ and a heating time of 20~40s; for films ≥30nm, the reflow temperature is 300~400℃ and the heating time is 50~70s.

10. The control method as described in claim 6, characterized in that, Step S8 includes: the wafer (9) after secondary deposition is transferred from the first wafer transfer position (20) to the first cooling position (21) in the integrated cavity (1 / 1') by the lifting and rotating mechanism (16). The first cavity (7) is filled with gas to atmospheric pressure, and the gas flow channel and the lower water cooling channel are opened at the same time. The gas flow rate is between 150 and 200 SLM, and the water cooling flow rate is between 5 and 10 L / min, so that the wafer (9) is cooled to below 100°C within 30 seconds.

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