Polycrystalline silicon reduction high-efficiency vapor deposition reaction system and method

Abstract

The invention discloses a polycrystalline silicon reduction efficient vapor deposition reaction system and method, and relates to the technical field of polycrystalline silicon preparation, the polycrystalline silicon reduction efficient vapor deposition reaction system comprises a plasma reaction chamber, the inlet end of the plasma reaction chamber is communicated with a mixed gas pipeline, and the plasma reaction chamber is used for receiving SiHCl3 and H2 mixed gas so as to generate plasma-state mixed gas from the SiHCl3 and H2 mixed gas; the plasma accelerator is communicated with the outlet end of the plasma reaction chamber and is used for accelerating the plasma-state mixed gas and maintaining the activity of the plasma-state mixed gas; the reduction furnace is connected with the outlet end of the plasma accelerator, a plurality of silicon rods are arranged in the reduction furnace, and the reduction furnace is used for receiving the plasma-state mixed gas and carrying out vapor deposition reaction; the microwave emission head assembly is mounted on the reduction furnace and is used for providing high-energy electromagnetic waves into the reduction furnace; and the bias voltage source and the heating assembly are connected with the silicon rod. According to the polycrystalline silicon reduction high-efficiency vapor deposition reaction system, the technical problems of low production efficiency and high production energy consumption cost of polycrystalline silicon preparation are solved.

Description

Technical Field

[0001] This invention relates to the field of polycrystalline silicon technology, and in particular to a high-efficiency vapor deposition reaction system and method for polycrystalline silicon reduction. Background Technology

[0002] The improved Siemens process for polysilicon reduction, which uses vapor deposition, generally has low efficiency, with a deposition rate of 10%-12%, resulting in high power consumption and thus making it uncompetitive in the market due to high costs. This puts the Siemens process on the verge of being replaced by particulate silicon production processes. However, since 80% of polysilicon production facilities in reality use the Siemens process, changing the production process would require a huge investment.

[0003] Therefore, how to provide a high-efficiency polycrystalline silicon reduction vapor deposition reaction system and method with high production efficiency and low production energy consumption cost has become an urgent problem to be solved. Summary of the Invention

[0004] The purpose of this invention is to provide a high-efficiency vapor deposition reaction system and method for polycrystalline silicon reduction, which solves the technical problems of low production efficiency and high energy consumption cost in polycrystalline silicon preparation.

[0005] To achieve the above objectives, the present invention provides a high-efficiency vapor deposition reaction system for polycrystalline silicon reduction, comprising:

[0006] The plasma reaction chamber has its inlet end connected to a mixed gas pipeline to receive a mixture of SiHCl3 and H2 gas, so as to generate a plasma-state mixed gas from the mixture of SiHCl3 and H2 gas.

[0007] A plasma accelerator, connected to the outlet of the plasma reaction chamber, is used to accelerate the plasma-state mixed gas and maintain its activity.

[0008] A reduction furnace is connected to the outlet of the plasma accelerator. The reduction furnace is equipped with several silicon rods for receiving the plasma-state mixed gas and performing a vapor-phase deposition reaction.

[0009] A microwave transmitter assembly, mounted on the reduction furnace, is used to provide high-energy electromagnetic waves into the reduction furnace;

[0010] The bias source and heating components are connected to the silicon rod.

[0011] Preferably, the plasma reaction chamber includes:

[0012] Stainless steel housing shielding cover;

[0013] A high-purity quartz tube is installed inside the stainless steel outer shell shield, with one end connected to the mixed gas pipeline and the other end connected to the plasma accelerator inlet.

[0014] An induction coil is sleeved outside the high-purity quartz tube, and the induction coil is electrically connected to a microwave power supply or a radio frequency power supply.

[0015] Preferably, the inner wall of the high-purity quartz tube is provided with a chlorine corrosion resistant coating, the thickness of which is greater than 50 μm, and the chlorine corrosion resistant coating is a high-purity quartz coating or a stainless steel coating treated with Al2O3.

[0016] Preferably, it further includes an RF matching unit connected between the induction coil and the microwave power supply or the RF power supply.

[0017] Preferably, the bias source is a DC bias source or an RF bias source.

[0018] Preferably, the microwave transmitter assembly includes a first microwave transmitter, a second microwave transmitter, a third microwave transmitter, a fourth microwave transmitter, and a fifth microwave transmitter, which are respectively arranged on the top, upper left side, front side, rear side, and right side of the reduction furnace.

[0019] This application also provides a method for high-efficiency vapor deposition of polycrystalline silicon reduction, including the following steps:

[0020] Step 1: Mix SiHCl3 and H2 in a certain proportion and introduce the mixture into the plasma reaction chamber through a gas mixing pipeline;

[0021] Step 2: Turn on the microwave or radio frequency power supply to excite the mixed gas through the induction coil to form a plasma mixed gas;

[0022] Step 3: The plasma-state mixed gas is accelerated by the plasma accelerator and then enters the reduction furnace;

[0023] Step 4: Emits microwaves into the reduction furnace through the microwave transmitter assembly to maintain the plasma state;

[0024] Step 5: Apply a bias voltage to the silicon rod through the bias source to guide the directional deposition of active ions, and heat the silicon rod through the heating component to carry out the vapor deposition reaction.

[0025] Preferably, the volume ratio of H2 to SiHCl3 is 5:1 to 10:1.

[0026] Preferably, the temperature of the vapor deposition reaction is 300℃-800℃, and the pressure is... Torr- Torr.

[0027] Compared to the aforementioned background technology, the polycrystalline silicon reduction high-efficiency vapor deposition reaction system provided by this invention establishes a plasma reaction chamber before SiHCl3 and H2 enter the reduction furnace for ionization, generating high-energy electrons and ions, reducing the reaction activation energy, and enabling SiHCl3 to efficiently dissociate at low temperature to generate active groups, providing highly active raw materials for silicon deposition. A plasma accelerator directs the plasma jet into the reduction furnace, ensuring efficient transport of active groups. Inside the reduction furnace, multi-angle distributed microwave sources continuously provide electromagnetic energy to maintain the plasma state of the material and prevent energy decay. Furthermore, a DC / RF bias source on the silicon rod forms a directional electric field, driving the positively charged... Rapid deposition significantly improves deposition efficiency while inhibiting [the process]. Byproduct generation and gas-phase nucleation reduce dust pollution, improve product purity and deposition uniformity, and through plasma-assisted and electric field synergy, achieve low-temperature and high-efficiency deposition, reduce energy consumption, and optimize the cost and quality of polycrystalline silicon production. Attached Figure Description

[0028] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0029] Figure 1 This is a process flow diagram of a high-efficiency vapor deposition reaction system for polycrystalline silicon reduction provided in an embodiment of the present invention;

[0030] Figure 2 This is a top view of the reduction furnace in a high-efficiency vapor deposition reaction system for polycrystalline silicon reduction provided in an embodiment of the present invention;

[0031] Figure 3 This is a cross-sectional electric field distribution diagram of the microwave-assisted cavity in a polycrystalline silicon reduction high-efficiency vapor deposition reaction system provided in an embodiment of the present invention.

[0032] in:

[0033] 1-Plasma reaction chamber, 11-Stainless steel outer shell shield, 12-High-purity quartz tube, 13-Induction coil, 2-Plasma accelerator, 3-Reduction furnace, 4-Silicon rod, 5-First microwave transmitter, 6-Second microwave transmitter, 7-Third microwave transmitter, 8-Fourth microwave transmitter, 9-Fifth microwave transmitter. Detailed Implementation

[0034] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0035] To enable those skilled in the art to better understand the present invention, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0036] See Figure 1 This application provides a high-efficiency vapor deposition reaction system for polycrystalline silicon reduction, comprising a plasma reaction chamber 1, the inlet of which is connected to a mixed gas pipeline for receiving a mixture of SiHCl3 and H2 gas to generate a plasma-state mixed gas; a plasma accelerator 2, connected to the outlet of the plasma reaction chamber 1, for accelerating the plasma-state mixed gas and maintaining its activity; a reduction furnace 3, connected to the outlet of the plasma accelerator 2, wherein a plurality of silicon rods 4 are provided inside the reduction furnace 3 for receiving the plasma-state mixed gas and performing a vapor deposition reaction; a microwave transmitter assembly, mounted on the reduction furnace 3, for providing high-energy electromagnetic waves into the reduction furnace 3; and a bias source and heating assembly, connected to the silicon rods 4.

[0037] Specifically, the inlet of the plasma reaction chamber 1 is connected to the SiHCl3 and H2 mixed gas delivery pipeline to receive the reaction gas in a specific ratio (H2 / SiHCl3 volume ratio is 5:1 to 10:1). A radio frequency or microwave excitation source is set in the chamber to excite the gas molecules to ionize and generate a plasma mixed gas rich in high-energy electrons, ions and active free radicals.

[0038] The cavity adopts a coaxial resonant structure design to ensure uniform electromagnetic field distribution (field strength distribution error <5%) and improve ionization efficiency.

[0039] Plasma accelerator 2 is connected to the outlet end of plasma reaction chamber 1 and is used to directionally accelerate the ionized plasma mixture and maintain its highly active state during transport.

[0040] The reduction furnace 3 is sealed to the outlet end of the plasma accelerator 2. Several silicon rods 4 arranged in an array are placed inside the furnace as the deposition substrate. The reduction furnace has high temperature resistance, corrosion resistance and microwave transmission performance. The furnace body is made of high-purity quartz or ceramic composite material.

[0041] After the plasma gas enters the furnace, the active silicon species undergo an adsorption-diffusion-crystallization reaction on the surface of silicon rod 4 to form a high-purity polycrystalline silicon layer.

[0042] The microwave emitting head assembly installed in reduction furnace 3 is used to continuously inject microwave energy into the furnace during the deposition process to maintain or further excite the plasma state of the reactive gases. Each silicon rod 4 is connected to a bias source via a conductive clamp, applying a negative bias voltage (-10 V to -200 V) during the deposition process to form a local electric field that drives positively charged silicon-based ions (such as...) , ) Directional migration and accelerated impact on the silicon rod surface promote ordered deposition, inhibit gas nucleation and dust generation, while reducing The formation of by-products improves product purity and density.

[0043] The heating element is used to maintain the initial heating of the silicon rod and process temperature control. Since the plasma reduces the activation energy required for the decomposition of SiHCl3, the deposition temperature of >1000℃ in the traditional process can be significantly reduced to 300-800℃ (preferably 710℃), thereby reducing heating energy consumption and achieving a substantial reduction in reduction power consumption.

[0044] Working principle:

[0045] The SiHCl3 and H2 mixed gas first enters the plasma reaction chamber 1, where it is efficiently ionized by radio frequency or microwave to generate active plasma. Subsequently, it is injected at high speed into the reduction furnace 3 via the plasma accelerator 2. The external microwave emission component maintains the plasma activity, and the bias source guides the ions to be deposited directionally on the surface of the silicon rod 4.

[0046] Based on the above embodiments, the plasma reaction chamber 1 includes a stainless steel outer shell shield 11; a high-purity quartz tube 12, which is disposed inside the stainless steel outer shell shield 11, with one end connected to the mixed gas pipeline and the other end connected to the inlet of the plasma accelerator 2; and an induction coil 13, which is sleeved on the outside of the high-purity quartz tube 12 and is electrically connected to a microwave power supply or a radio frequency power supply.

[0047] In other words, the stainless steel outer shell shield 11 is made of 316L stainless steel, which has good mechanical strength and radio frequency / microwave shielding performance.

[0048] A high-purity quartz tube 12 is coaxially mounted inside a stainless steel outer casing 11, forming a reaction channel for plasma generation. The quartz tube has a purity of not less than 99.999%, i.e., HPQ grade, and can withstand temperatures up to 1100℃ or higher. It possesses excellent dielectric properties and microwave / radio frequency permeability, while also exhibiting good resistance to hydrogen chloride (HCl) and chlorine gas. With strong corrosive gas erosion capability, one end of the quartz tube is connected to the mixed gas pipeline through a sealed interface to receive the premixed gas of SiHCl3 and H2; the other end is sealed to the inlet end of the plasma accelerator 2 to output the generated plasma gas in a directional manner.

[0049] The induction coil 13 is wound around the outer wall of the high-purity quartz tube 12 in a spiral or spiral-solenoid composite structure, with 5 to 20 turns and uniform spacing to ensure uniform distribution of the electromagnetic field along the axial direction of the quartz tube. The induction coil 13 is electrically connected to an external radio frequency power supply or microwave power supply through an impedance matching network, such as a radio frequency matching device. When a high-frequency current passes through the induction coil, an alternating electromagnetic field is generated inside the quartz tube, causing the SiHCl3 / H2 mixed gas entering the chamber to be broken down and ionized, forming a high-temperature non-equilibrium plasma with an electron temperature reaching [insert value here]. The above, while the overall gas temperature remains at a low level, effectively breaks the Si–Cl bond energy of approximately 381 kJ / mol and the Si–H bond, generating , Active particles.

[0050] Based on the above embodiments, the inner wall of the high-purity quartz tube 12 is provided with a chlorine corrosion resistant coating, the thickness of which is greater than 50 μm; the chlorine corrosion resistant coating is a high-purity quartz coating or a stainless steel coating treated with Al2O3.

[0051] In some embodiments, the thickness of the chlorine corrosion resistant coating is greater than any value within a range of 60μm, 65μm, 70μm, 75μm, 80μm, 85μm, 90μm, 95μm, or 100μm. The chlorine corrosion resistant coating forms a dense protective barrier, effectively resisting the erosion of active chloride ions in the plasma environment, thus extending the service life of the quartz tube under strong corrosion conditions. Secondly, the ultra-thick coating completely covers the micro-defects on the surface of the quartz substrate, eliminating the risk of metal impurities leaching out and ensuring that the purity of the polycrystalline silicon product consistently meets electronic grade standards.

[0052] High-purity quartz coating or Al2O3-coated stainless steel coating has excellent chemical inertness and interfacial compatibility, and can form a defect-free continuous protective layer to prevent corrosion of the inner wall of the high-purity quartz tube.

[0053] In some implementations, the power range of the microwave power supply or radio frequency power supply is any range of values ​​from 100W, 500W, 1000W, 1500W, 2000W, 2500W, 3000W, 3500W, 4000W, 4500W, 5000W, 5500W, or 6000W, or any value within that range.

[0054] In some implementations, the energy density of the microwave or radio frequency power supply is >1W / cm².

[0055] In some implementations, the energy density of the microwave or radio frequency power supply is greater than any value within the range of 1W / cm², 1.5W / cm², 2W / cm², 2.5W / cm², 3W / cm², 3.5W / cm², 4W / cm², and 4.5W / cm².

[0056] In some embodiments, the electromagnetic field distribution uniformity error of the plasma reaction chamber is <5%.

[0057] In some implementations, the electromagnetic field distribution uniformity error of the plasma reaction chamber is within a range or any value within a range of any of the following values: <5%, <4.5%, <4%, <3.5%, <3%, <2.5%, <2%, <1.5%, <1%, or <0.5%.

[0058] Based on the above embodiments, the bias source is a DC bias source or an RF bias source. That is, the bias source is a switchable or optional DC bias source or an RF bias source, which is connected to each group of silicon rods 4 in the reduction furnace 3, respectively, to apply a controllable potential to the silicon rods during the vapor deposition process, thereby regulating the movement behavior of charged particles in the plasma and realizing directional accelerated deposition and interface quality optimization.

[0059] Based on the above embodiments, see Figure 2 The microwave transmitter assembly includes a first microwave transmitter 5, a second microwave transmitter 6, a third microwave transmitter 7, a fourth microwave transmitter 8, and a fifth microwave transmitter 9, which are respectively arranged on the top, upper left side, front side, rear side, and right side of the reduction furnace 3.

[0060] The first microwave transmitter 5 is located at the top center of the furnace cylinder of the reduction furnace 3, with its emission port facing the inside of the furnace cylinder of the reduction furnace 3, and its emission axis extending downward along the vertical axis of the furnace cylinder of the reduction furnace.

[0061] The second microwave transmitter 6 is located at the uppermost position on the left side wall of the reduction furnace 3, with its emission port facing the inside of the reduction furnace cylinder and its emission axis running horizontally through the reduction furnace cylinder.

[0062] The fourth microwave transmitter 8 is located on the rear side wall of the furnace cylinder of the reduction furnace 3, forming a height difference of 500mm-1000mm with the second microwave transmitter 6 in the vertical direction. Its emission port faces the inside of the furnace cylinder of the reduction furnace 3, and is spatially intersected with the emission port of the second microwave transmitter 6 at a 90-degree angle.

[0063] The third microwave transmitter 7 is located on the front side wall of the furnace cylinder of the reduction furnace 3, and forms a height difference of 500mm-1000mm with the fourth microwave transmitter 8 in the vertical direction. Its emission port faces the inside of the furnace cylinder of the reduction furnace 3.

[0064] The fifth microwave transmitter 9 is located on the right side wall of the furnace cylinder of the reduction furnace 3, forming a height difference of 500mm-1000mm with the third microwave transmitter 7 in the vertical direction. Its emission port faces the inside of the furnace cylinder of the reduction furnace 3, and is spatially distributed at a 90° intersection with the emission port of the third microwave transmitter 7.

[0065] Achieving a three-dimensional uniform distribution of microwave energy within the reduction furnace 3: The top transmitter provides axial energy input, which, combined with four sets of transmitters arranged at 90° intervals on the side walls, maintains a gradient height difference of 500mm-1000mm in the vertical direction, forming a three-dimensional interlaced electromagnetic field network. Multi-angle microwave interference effectively eliminates energy dead zones, thus improving the uniformity of plasma excitation. Figure 3 It can be seen that the 90° intersecting spatial arrangement combined with the height difference design achieves electromagnetic wave phase optimization, which greatly reduces the reflected power; and the small standard deviation of microwave intensity distribution in the furnace ensures the efficient maintenance of the plasma state of materials in the large-volume reaction zone.

[0066] Based on the above embodiments, the reduction furnace 3 is equipped with temperature sensors and pressure sensors. In other words, in order to monitor and regulate the internal environment of the reduction furnace 3, temperature sensors and pressure sensors are configured inside the reduction furnace 3, which helps to monitor process conditions in real time, optimize temperature and pressure parameters during the deposition process, and ensure production stability and product consistency.

[0067] This application also provides a polysilicon reduction high-efficiency vapor deposition method, which can be operated using the above-mentioned polysilicon reduction high-efficiency vapor deposition reaction system. The method includes the following steps:

[0068] Step 1:

[0069] SiHCl3 and H2 are mixed at a volume ratio of preferably 1:5, and the mixture is introduced into the plasma reaction chamber 1 through a gas mixing pipeline at a flow rate of 5 to 50 sccm standard cubic centimeters per minute, ensuring that the uniformity error of the mixed gas is <2%.

[0070] Step 2:

[0071] The microwave or radio frequency power supply is turned on, and the mixed gas is excited by the induction coil 13 surrounding the high-purity quartz tube 12 to generate a plasma mixed gas. The microwave power supply frequency is 2.45 GHz ± 0.05 GHz, and the radio frequency power supply frequency is 13.56 MHz ± 0.5 MHz. The power supply output power is 100 W to 6000 W, and the energy density is >1 W / cm². The impedance is dynamically adjusted by the radio frequency matching device to make the reflected power <5% of the input power.

[0072] Step 3:

[0073] The plasma-state mixed gas is accelerated to a flow rate of 50–200 m / s by plasma accelerator 2, and its activity is maintained by gradient magnetic field or electric field.

[0074] Step 4:

[0075] Microwaves are emitted into the reduction furnace 3 through a microwave transmitter assembly. The first microwave transmitter 5 is arranged at the top center of the reduction furnace 3, and the second microwave transmitter 6, the third microwave transmitter 7, the fourth microwave transmitter 8 and the fifth microwave transmitter 9 are arranged at the upper left side, the front side, the rear side and the right side of the reduction furnace 3, respectively. The total microwave power is 500 W to 5000 W, so that the electromagnetic field uniformity error in the reduction furnace 3 is <3%, and the plasma diffusion is maintained stably.

[0076] Step 5:

[0077] A bias voltage of -50 V to +200 V, preferably -20 V to +50 V, is applied to the silicon rod 4 by a DC bias source or an RF bias source to guide the active ions to be deposited onto the surface of the silicon rod 4 in a directional manner; the silicon rod 4 is heated to 300℃ to 800℃, preferably 500℃ to 700℃, by a heating component.

[0078] Adjust the pressure inside reduction furnace 3 to Torr~ Torr promotes the optimization of vapor deposition reaction kinetics.

[0079] It should be noted that in this specification, relational terms such as first and second are used only to distinguish one entity from several other entities, and do not necessarily require or imply any such actual relationship or order between these entities.

[0080] This article uses specific examples to illustrate the principles and implementation methods of the present invention. The descriptions of the above embodiments are only for the purpose of helping to understand the method and core ideas of the present invention. It should be noted that those skilled in the art can make several improvements and modifications to the present invention without departing from the principles of the present invention, and these improvements and modifications also fall within the protection scope of the claims of the present invention.

Claims

1. A high-efficiency vapor deposition reaction system for polycrystalline silicon reduction, characterized in that, include: The plasma reaction chamber (1) has its inlet end connected to the mixed gas pipeline to receive the SiHCl3 and H2 mixed gas, so as to generate the SiHCl3 and H2 mixed gas into a plasma mixed gas. The plasma accelerator (2) is connected to the outlet end of the plasma reaction chamber (1) and is used to accelerate the plasma-state mixed gas and maintain its activity. The reduction furnace (3) is connected to the outlet end of the plasma accelerator (2). The reduction furnace (3) is provided with several silicon rods (4) for receiving the plasma mixed gas and performing a vapor deposition reaction. A microwave transmitter assembly is installed on the reduction furnace (3) for providing high-energy electromagnetic waves into the reduction furnace (3); The bias source and heating components are connected to the silicon rod (4).

2. The high-efficiency vapor deposition reaction system for polycrystalline silicon reduction according to claim 1, characterized in that, The plasma reaction chamber (1) includes: Stainless steel housing shielding cover (11); A high-purity quartz tube (12) is installed inside the stainless steel outer shell shield (11), with one end connected to the mixed gas pipeline and the other end connected to the inlet of the plasma accelerator (2); An induction coil (13) is sleeved outside the high-purity quartz tube (12), and the induction coil (13) is electrically connected to a microwave power supply or a radio frequency power supply.

3. The high-efficiency vapor deposition reaction system for polycrystalline silicon reduction according to claim 2, characterized in that, The inner wall of the high-purity quartz tube (12) is provided with a chlorine corrosion resistant coating, the thickness of which is greater than 50 μm.

4. The high-efficiency vapor deposition reaction system for polycrystalline silicon reduction according to claim 3, characterized in that, The chlorine-resistant coating is a high-purity quartz coating or a stainless steel coating treated with Al2O3.

5. The high-efficiency vapor deposition reaction system for polycrystalline silicon reduction according to claim 2, characterized in that, It also includes an RF matching unit connected between the induction coil (13) and the microwave power supply or the RF power supply.

6. The high-efficiency vapor deposition reaction system for polycrystalline silicon reduction according to claim 1, characterized in that, The bias source is a DC bias source or an RF bias source.

7. The high-efficiency vapor deposition reaction system for polycrystalline silicon reduction according to claim 1, characterized in that: The microwave transmitter assembly includes a first microwave transmitter (5), a second microwave transmitter (6), a third microwave transmitter (7), a fourth microwave transmitter (8), and a fifth microwave transmitter (9), which are respectively arranged on the top, upper left side, front side, rear side, and right side of the reduction furnace (3).

8. A method for polycrystalline silicon reduction high-efficiency vapor deposition based on the polycrystalline silicon reduction high-efficiency vapor deposition reaction system according to any one of claims 1-7, characterized in that, Includes the following steps: Step 1: Mix SiHCl3 and H2 in a certain proportion and introduce the mixed gas into the plasma reaction chamber (1) through the gas pipeline. Step 2: Turn on the microwave power supply or radio frequency power supply to excite the mixed gas to form a plasma mixed gas through the induction coil (13); Step 3: The plasma-state mixed gas is accelerated by the plasma accelerator (2) and then enters the reduction furnace (3). Step 4: Emits microwaves into the reduction furnace (3) through the microwave transmitter assembly to maintain the plasma state; Step 5: Apply a bias voltage to the silicon rod (4) through the bias source to guide the directional deposition of active ions, and heat the silicon rod (4) through the heating component to carry out the vapor deposition reaction.

9. The polycrystalline silicon reduction high-efficiency vapor deposition method according to claim 8, characterized in that, The volume ratio of H2 to SiHCl3 is 5:1 to 10:

1.

10. The polycrystalline silicon reduction high-efficiency vapor deposition method according to claim 9, characterized in that, The temperature for vapor deposition is 300℃-800℃; the pressure is... Torr- Torr.

Images