Crystal pulling heating power regulation and control method, device and equipment and storage medium

Abstract

The embodiment of the invention provides a crystal pulling heating power regulation and control method, device and equipment and a storage medium, and belongs to the technical field of monocrystalline silicon material production. The method comprises the steps that real-time crystal pulling parameters are obtained, wherein the real-time crystal pulling parameters comprise the real-time residual material weight and the real-time crystal pulling speed; based on the real-time residual material weight, the real-time crystal pulling speed and a pre-constructed mapping table, the current heating compensation power is determined, the current crystal pulling heating power is regulated and controlled through the heating compensation power, and the mapping table comprises the mapping relation of the residual material weight, the crystal pulling speed and the compensation power. According to the invention, based on the real-time crystal pulling parameters, the proper current heating compensation power can be rapidly determined by using the pre-constructed mapping table, so that the crystal pulling heating power is regulated and controlled to maintain the solid-liquid interface temperature of the silicon material in the crucible, the stability of the crystal pulling process is improved, and the occurrence of abnormal crystal pulling is reduced.

Description

Technical Field

[0001] This application relates to the field of monocrystalline silicon material production technology, specifically to methods, apparatus, equipment, and storage media for regulating the heating power of crystal pulling. Background Technology

[0002] In the production of monocrystalline silicon, the Czochralski method is typically used for crystal growth. During the crystal pulling process, as the monocrystalline silicon gradually forms, the amount of silicon material in the crucible gradually decreases. This may cause the solid-liquid interface temperature of the silicon material in the crucible to gradually decrease, thereby affecting the stability of the crystal pulling process and leading to crystal pulling anomalies. Summary of the Invention

[0003] This application provides a method, apparatus, device, and storage medium for regulating the heating power of crystal pulling, thereby reducing the occurrence of crystal pulling abnormalities by regulating the heating power of crystal pulling.

[0004] In a first aspect, embodiments of this application provide a method for regulating the heating power of crystal pulling, the method comprising:

[0005] Obtain real-time crystal pulling parameters, including real-time remaining material weight and real-time crystal pulling speed;

[0006] Based on the real-time remaining material weight, real-time crystal pulling speed, and a pre-built mapping table, the current heating compensation power is determined so as to regulate the current crystal pulling heating power. The mapping table includes the mapping relationship between the remaining material weight, crystal pulling speed, and compensation power.

[0007] In some embodiments, the method is applied to the crystal pulling process with constant diameter.

[0008] Based on real-time remaining material weight, real-time crystal pulling speed, and a pre-built mapping table, the current heating compensation power is determined, including:

[0009] The first compensation power corresponding to the real-time remaining material weight and the second compensation power corresponding to the real-time crystal pulling speed are obtained based on the mapping table.

[0010] The current heating compensation power is determined based on the first compensation power and the second compensation power.

[0011] In some embodiments, the mapping table includes a preset residual weight sequence, and the crystal pulling speed and compensation power corresponding to each preset residual weight in the preset residual weight sequence;

[0012] Based on the mapping table, the first compensation power corresponding to the real-time remaining material weight and the second compensation power corresponding to the real-time crystal pulling speed are obtained, including:

[0013] Determine the first and second weights adjacent to the real-time remaining material weight from the preset remaining material weight sequence;

[0014] Determine the first and second pulling speeds adjacent to the real-time crystal pulling speed from the mapping table;

[0015] The first compensation power is obtained based on the first weight, the second weight, the compensation power corresponding to the first weight, the compensation power corresponding to the second weight, and the real-time remaining weight.

[0016] The second compensation power is obtained based on the first pulling speed, the second pulling speed, the compensation power corresponding to the first pulling speed, the compensation power corresponding to the second pulling speed, and the real-time crystal pulling speed.

[0017] In some embodiments, based on a preset arrangement order, the first weight difference of any preset remaining weight in the preset remaining weight sequence is greater than or equal to the second weight difference. The first weight difference is the weight difference between the preset remaining weight and the adjacent previous preset remaining weight, and the second weight difference is the weight difference between the preset remaining weight and the adjacent next preset remaining weight.

[0018] In some embodiments, the method for constructing the mapping table includes:

[0019] Obtain historical crystal pulling parameters, including historical residual material weight, historical crystal pulling speed, and historical compensation power.

[0020] Based on historical residual material weight and historical compensation power, the first fitting curve is obtained;

[0021] Based on historical residual material weight and historical crystal pulling speed, a second fitting curve was obtained.

[0022] The compensation power corresponding to each preset remaining material weight is obtained from the first fitting curve, and the crystal pulling speed corresponding to each preset remaining material weight is obtained from the second fitting curve.

[0023] In some embodiments, fitting to obtain a first fitted curve includes: fitting the first fitted curve using the median;

[0024] The process of fitting a second fitted curve includes: fitting the second fitted curve using the median.

[0025] In some embodiments, determining the current heating compensation power based on the first compensation power and the second compensation power includes:

[0026] The average of the first compensation power and the second compensation power is determined as the current heating compensation power.

[0027] Secondly, embodiments of this application also provide a crystal pulling heating power control device, the device comprising:

[0028] The first module is used to obtain real-time crystal pulling parameters, including real-time remaining material weight and real-time crystal pulling speed.

[0029] The second module is used to determine the current heating compensation power based on the real-time remaining material weight, the real-time crystal pulling speed, and a pre-built mapping table, so as to regulate the current crystal pulling heating power through the heating compensation power. The mapping table includes the mapping relationship between the remaining material weight, the crystal pulling speed, and the compensation power.

[0030] Thirdly, embodiments of this application also provide a crystal pulling heating power control device, the device comprising:

[0031] At least one processor;

[0032] At least one memory is provided for storing at least one program; when the at least one program is executed by at least one processor, the at least one processor implements the crystal pulling heating power control method as described in the above embodiments.

[0033] Fourthly, embodiments of this application also provide a computer-readable storage medium storing a processor-executable program, which, when executed by a processor, is used to perform the crystal pulling heating power control method as described in the above embodiments.

[0034] Beneficial Effects: This application provides a method, apparatus, device, and storage medium for regulating the crystal pulling heating power. The method includes: acquiring real-time crystal pulling parameters, including real-time remaining material weight and real-time crystal pulling speed; determining the current heating compensation power based on the real-time remaining material weight, real-time crystal pulling speed, and a pre-built mapping table, so as to regulate the current crystal pulling heating power through the heating compensation power. The mapping table includes the mapping relationship between the remaining material weight, crystal pulling speed, and compensation power. Based on real-time crystal pulling parameters and using a pre-built mapping table, this application enables the rapid determination of an appropriate current heating compensation power to regulate the crystal pulling heating power and maintain the solid-liquid interface temperature of the silicon material in the crucible, thereby improving the stability of the crystal pulling process and reducing the occurrence of crystal pulling anomalies. Attached Figure Description

[0035] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0036] Figure 1 A schematic flowchart illustrating a method for controlling the heating power of crystal pulling according to an embodiment of this application;

[0037] Figure 2 A schematic flowchart illustrating a current crystal pulling heating power control method provided in this application embodiment;

[0038] Figure 3 A flowchart illustrating a method for determining a first compensation power and a second compensation power, provided for an embodiment of this application;

[0039] Figure 4 A schematic flowchart illustrating another method for controlling the heating power of crystal pulling according to an embodiment of this application;

[0040] Figure 5 This is a schematic diagram of a crystal pulling heating power control device provided in an embodiment of this application. Detailed Implementation

[0041] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0042] In the description of this application, it should be understood that the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, features defined as "first" or "second" may explicitly or implicitly include one or more of the stated features. In the description of this application, "multiple" means two or more, unless otherwise explicitly specified.

[0043] The use of "applies to" or "configured to" in this application implies open and inclusive language, which does not exclude the applicability to or configuration to devices performing additional tasks or steps. Additionally, the use of "based on" implies openness and inclusivity, because processes, steps, calculations, or other actions "based on" one or more of the stated conditions or values ​​may in practice be based on additional conditions or values ​​beyond those stated.

[0044] In this application, the term "exemplary" is used to mean "used as an example, illustration, or description." Any embodiment described as "exemplary" in this application is not necessarily to be construed as being more preferred or advantageous than other embodiments. The following description is provided to enable any person skilled in the art to make and use this application. Details are set forth in the following description for purposes of explanation. It should be understood that those skilled in the art will recognize that this application can be made without using these specific details. In other instances, well-known structures and processes are not described in detail to avoid obscuring the description of this application with unnecessary detail. Therefore, this application is not intended to be limited to the embodiments shown, but is consistent with the broadest scope of the principles and features disclosed in this application.

[0045] In the production of monocrystalline silicon, the Czochralski method is typically used for crystal growth. As the pulling process progresses, especially towards the end, the amount of silicon material in the crucible gradually decreases, causing the melt level to drop. This leads to the solid-liquid interface deviating from the ideal heating position, meaning the crystal growth front moves away from the core region of the heater's thermal field. This disrupts the stability of the solid-liquid interface temperature, potentially causing a gradual decrease in the solid-liquid interface temperature within the crucible, thus affecting the stability of the crystal pulling process and resulting in pulling anomalies.

[0046] Furthermore, as the amount of silicon material in the crucible gradually decreases, it is necessary to adjust the heating power of the single crystal furnace to replenish the heat and maintain a suitable temperature for crystal pulling. However, the existing single crystal furnace control system logic is not perfect, and some furnaces still require manual power adjustments. This not only increases the workload of operators but also affects production efficiency.

[0047] In view of this, embodiments of this application provide a method for regulating the heating power of crystal pulling, which aims to solve at least one of the above-mentioned technical problems.

[0048] Please see Figure 1 As shown, Figure 1 This is a schematic flowchart of a crystal pulling heating power control method provided in an embodiment of this application.

[0049] This application provides a method for controlling the heating power of crystal pulling, the method comprising:

[0050] S100: Obtain real-time crystal pulling parameters, including real-time remaining material weight and real-time crystal pulling speed;

[0051] It is important to understand that during the crystal pulling process, continuous monitoring and acquisition of real-time crystal pulling parameters are crucial for timely monitoring of the process and rapid response to changes in these parameters. This allows for real-time adjustment of the crystal pulling heating power. Real-time crystal pulling parameters may include, but are not limited to, real-time remaining material weight and real-time crystal pulling speed. These parameters can be acquired through data acquisition devices installed in the single crystal furnace and transmitted via communication equipment.

[0052] S200: Based on the real-time remaining material weight, real-time crystal pulling speed, and a pre-built mapping table, the current heating compensation power is determined so as to regulate the current crystal pulling heating power through the heating compensation power. The mapping table includes the mapping relationship between the remaining material weight, crystal pulling speed, and compensation power.

[0053] It's important to understand that pre-constructing a mapping table can establish the correspondence between residual material weight, crystal pulling speed, and compensation power based on experimental data or theoretical models. Then, based on real-time residual material weight, real-time crystal pulling speed, and the pre-constructed mapping table, the current heating compensation power can be determined. This ensures that the current crystal pulling heating power is adjusted according to the current heating compensation power to maintain the solid-liquid interface temperature of the silicon material in the crucible, thereby maintaining the stability of the crystal pulling process. The use of the mapping table allows for the rapid determination of the appropriate heating compensation power, thus quickly maintaining the stability of the crystal pulling process.

[0054] For example, the crystal pulling heating power control method proposed in this application is as follows:

[0055] First, obtain the real-time crystal pulling parameters, which include the real-time remaining material weight and the real-time crystal pulling speed.

[0056] Then, based on the current real-time remaining material weight and real-time crystal pulling speed, quickly find the compensation power corresponding to the current real-time remaining material weight and real-time crystal pulling speed in the mapping table, and then determine the current heating compensation power through the compensation power;

[0057] Finally, the current crystal pulling heating power is adjusted based on the current heating compensation power. Specifically, when the crystal pulling heating power adjustment method proposed in this application is first implemented, the crystal pulling heating power of the single crystal furnace is collected as the reference crystal pulling heating power. Then, the current heating compensation power is superimposed on the reference crystal pulling heating power, so that the superimposed heating power is used as the current crystal pulling heating power. Furthermore, after the crystal pulling heating power adjustment method is implemented, the heating compensation power determined in real time is superimposed on the initially collected reference crystal pulling heating power, so that the superimposed heating power is used as the real-time crystal pulling heating power for heating the single crystal furnace. This ensures that the crystal pulling heating power after heating compensation power adjustment can maintain the solid-liquid interface temperature of silicon in the crucible, thereby maintaining the stability of the current crystal pulling and reducing the occurrence of crystal pulling anomalies. It can be seen that the heating compensation power of the single crystal furnace can be automatically obtained and adjusted based on the construction of the mapping table, thereby controlling the temperature of the crystal pulling process, reducing the need for manual intervention, thereby reducing the workload of operators and improving production efficiency.

[0058] The present application provides a method for regulating the heating power of crystal pulling, comprising: acquiring real-time crystal pulling parameters, including real-time remaining material weight and real-time crystal pulling speed; determining the current heating compensation power based on the real-time remaining material weight, real-time crystal pulling speed, and a pre-constructed mapping table, so as to regulate the current crystal pulling heating power through the heating compensation power; the mapping table includes the mapping relationship between the remaining material weight, crystal pulling speed, and heating compensation power. Based on real-time crystal pulling parameters and using a pre-constructed mapping table, this application enables the rapid determination of an appropriate current heating compensation power to regulate the crystal pulling heating power and maintain the solid-liquid interface temperature of the silicon material in the crucible, thereby improving the stability of the crystal pulling process and reducing the occurrence of crystal pulling anomalies. Furthermore, the construction of the mapping table allows for the automatic acquisition and adjustment of the heating compensation power of the single crystal furnace, reducing the workload of operators and improving production efficiency.

[0059] Please see Figure 2 As shown, Figure 2 This is a schematic flowchart of a current crystal pulling heating power control method provided in an embodiment of this application.

[0060] In some embodiments, the method is applied to a crystal pulling process with constant diameter; based on real-time residual material weight, real-time crystal pulling speed, and a pre-built mapping table, the current heating compensation power is determined, including:

[0061] S210: Obtain the first compensation power corresponding to the real-time remaining material weight and the second compensation power corresponding to the real-time crystal pulling speed based on the mapping table;

[0062] S220: Determine the heating compensation power based on the first compensation power and the second compensation power.

[0063] It should be understood that the crystal pulling heating power control method provided in this application can be applied to the constant diameter step in the crystal pulling process, thereby maintaining the stability of the constant diameter step process and reducing the occurrence of crystal pulling anomalies. Additionally, the real-time remaining material weight refers to the weight of the remaining silicon material in the crucible. The real-time crystal pulling speed refers to the pulling speed of the single crystal silicon rod. The pre-constructed mapping table includes the correspondence between the remaining material weight and the first compensation power, as well as the correspondence between the crystal pulling speed and the second compensation power. The pre-constructed mapping table can be built based on experimental data or theoretical models to establish the correspondence between the remaining material weight and the first compensation power, and the correspondence between the crystal pulling speed and the second compensation power. Furthermore, the mapping table can include the first compensation power value corresponding to different remaining material weights, and the second compensation power value corresponding to different crystal pulling speeds. The crystal pulling speed can be obtained by determining the corresponding second compensation power based on the remaining material weight.

[0064] For example, the crystal pulling heating power control method proposed in this application is as follows:

[0065] First, obtain the real-time remaining material weight and the real-time crystal pulling speed;

[0066] Then, based on the current real-time remaining material weight and real-time crystal pulling speed, quickly find the first compensation power corresponding to the current real-time remaining material weight in the mapping table, and quickly find the second compensation power corresponding to the current real-time crystal pulling speed in the mapping table.

[0067] Finally, the first compensation power and the second compensation power are comprehensively analyzed to determine the final heating compensation power. Based on the heating compensation power, the crystal pulling heating power of the single crystal furnace is adjusted, thereby controlling the crystal pulling temperature of the single crystal furnace to maintain the stability of the crystal pulling process and reduce the occurrence of crystal pulling abnormalities.

[0068] Understandably, during the crystal pulling process in a single-crystal furnace, the remaining material weight and crystal pulling speed are key parameters that directly affect the growth quality and efficiency of the silicon crystal. The remaining material weight affects the solid-liquid interface temperature of the silicon material in the crucible, and the crystal pulling effect corresponding to the solid-liquid interface temperature can be reflected in the crystal pulling speed. Therefore, this application, based on real-time monitoring of the remaining material weight and crystal pulling speed, can promptly determine the current heating compensation power. By monitoring the remaining material weight in real time, the changes in the solid-liquid interface temperature of the silicon material in the crucible can be accurately assessed, thereby adjusting the heating power in a timely manner to avoid temperature fluctuations caused by the reduction of silicon material. At the same time, monitoring the crystal pulling speed can reflect changes in the crystal pulling effect, thereby guiding the adjustment of the heating compensation power to maintain a stable crystal pulling speed. This application, through real-time monitoring and adjustment mechanisms to regulate the crystal pulling heating power, ensures the stability of the crystal pulling process, ensures crystal quality and production efficiency, and reduces the occurrence of crystal defects.

[0069] Please see Figure 3 As shown, Figure 3 This is a flowchart illustrating a method for determining a first compensation power and a second compensation power, provided in an embodiment of this application.

[0070] In some embodiments, the mapping table includes a preset residual weight sequence, and the crystal pulling speed and compensation power corresponding to each preset residual weight in the preset residual weight sequence;

[0071] Based on the mapping table, the first compensation power corresponding to the real-time remaining material weight and the second compensation power corresponding to the real-time crystal pulling speed are obtained, including:

[0072] Determine the first and second weights adjacent to the real-time remaining material weight from the preset remaining material weight sequence;

[0073] Determine the first and second pulling speeds adjacent to the real-time crystal pulling speed from the mapping table;

[0074] The first compensation power is obtained based on the first weight, the second weight, the compensation power corresponding to the first weight, the compensation power corresponding to the second weight, and the real-time remaining weight.

[0075] The second compensation power is obtained based on the first pulling speed, the second pulling speed, the compensation power corresponding to the first pulling speed, the compensation power corresponding to the second pulling speed, and the real-time crystal pulling speed.

[0076] It's important to understand that the remaining material weight sequence included in the mapping table is a series of preset remaining material weight values. These preset remaining material weight values ​​can be key data points pre-selected based on production experience or experimental data. Each preset remaining material weight is associated with a corresponding crystal pulling speed and compensation power. Therefore, the mapping table can include crystal pulling speed values ​​corresponding to different remaining material weights, as well as compensation power values ​​corresponding to different remaining material weights. Thus, the first compensation power corresponding to the real-time remaining material weight and the second compensation power corresponding to the real-time crystal pulling speed can be obtained based on the mapping table. The real-time crystal pulling speed can be used as an intermediate medium to obtain the corresponding second compensation power.

[0077] Specifically, a first weight and a second weight adjacent to the real-time remaining weight are determined from a preset remaining weight sequence. This means that the two weight values ​​closest to the real-time remaining weight are selected from the preset remaining weight sequence: the first weight and the second weight. For example, if the first weight is greater than the second weight, then the real-time remaining weight is less than the first weight and greater than or equal to the second weight, and the real-time remaining weight is not equal to 0. The preset remaining weight sequence is arranged from largest to smallest, assuming that the change in the remaining weight in the crucible during crystal pulling also decreases from largest to smallest. As the remaining weight in the crucible gradually decreases, the compensation power corresponding to the remaining weight gradually increases, and the crystal pulling speed corresponding to the remaining weight gradually decreases. If the real-time remaining weight differs from any of the preset remaining weights in the preset remaining weight sequence, then two adjacent preset remaining weights in the preset remaining weight sequence are selected as the first weight and the second weight, with the real-time remaining weight located between the two preset remaining weights. If the real-time remaining material weight is equal to any preset remaining material weight in the preset remaining material weight sequence, then the preset remaining material weight greater than the real-time remaining material weight is selected as the first weight, and the preset remaining material weight less than or equal to the real-time remaining material weight is selected as the second weight. The first weight and the second weight are adjacent values ​​in the preset remaining material weight sequence. It should be noted that when the real-time remaining material weight is 0, it means that there is no remaining material in the crucible, that is, crystal pulling is completed, and there is no need to adjust the crystal pulling heating power. Therefore, the real-time remaining material weight is not equal to 0 during the crystal pulling heating power adjustment process.

[0078] Specifically, the first compensation power is obtained based on the first weight, the second weight, the compensation power corresponding to the first weight, the compensation power corresponding to the second weight, and the real-time remaining material weight. The difference between the compensation power corresponding to the first weight and the compensation power corresponding to the second weight is determined as the first difference, the difference between the first weight and the second weight is determined as the second difference, and the difference between the first weight and the real-time remaining material weight is determined as the third difference. Then, based on the first difference, the second difference, and the third difference, the first compensation power is obtained by dividing the first difference by the second difference and then multiplying by the third difference.

[0079] For example, the calculation formula for the first compensation power can be expressed as: P1=((H2-H1) / (X1-X2))*(X1-Xa). In the formula, P1 refers to the first compensation power in kW, H1 refers to the compensation power corresponding to the first weight in kW, H2 refers to the compensation power corresponding to the second weight in kW, X1 refers to the first weight in kg, X2 refers to the second weight in kg, and Xa refers to the real-time remaining material weight in kg, where the first weight is greater than the second weight.

[0080] Specifically, the second compensation power is obtained based on the first pulling speed, the second pulling speed, the compensation power corresponding to the first pulling speed, the compensation power corresponding to the second pulling speed, and the real-time crystal pulling speed. The difference between the compensation power corresponding to the first pulling speed and the compensation power corresponding to the second pulling speed is determined as the fourth difference value, the difference between the first pulling speed and the second pulling speed is determined as the fifth difference value, and the difference between the first pulling speed and the real-time crystal pulling speed is determined as the sixth difference value. Then, the second compensation power is obtained based on the fourth difference value, the fifth difference value, and the sixth difference value. The second compensation power is obtained by dividing the fourth difference value by the fifth difference value and then multiplying it by the sixth difference value. It should be noted that the process of obtaining the compensation power corresponding to the first pulling speed and the compensation power corresponding to the second pulling speed is as follows: First, based on the real-time crystal pulling speed, the first pulling speed and the second pulling speed adjacent to the real-time crystal pulling speed are determined from the mapping table; then, based on the mapping relationship between each preset residual material weight in the preset residual material weight sequence included in the mapping table and the crystal pulling speed, the third weight corresponding to the first pulling speed and the fourth weight corresponding to the second pulling speed are determined; finally, based on the mapping relationship between each preset residual material weight in the preset residual material weight sequence included in the mapping table and the heating compensation power, the compensation power corresponding to the third weight and the compensation power corresponding to the fourth weight are determined. Thus, the compensation power corresponding to the third weight is the compensation power corresponding to the first pulling speed, and the compensation power corresponding to the fourth weight is the compensation power corresponding to the second pulling speed.

[0081] Furthermore, based on the mapping relationship between each preset remaining material weight and crystal pulling speed in the preset remaining material weight sequence included in the mapping table, the mapping table contains a crystal pulling speed sequence corresponding to the preset remaining material weight sequence. Therefore, the first and second pulling speeds adjacent to the real-time crystal pulling speed can be determined from the mapping table. It is known that as the preset remaining material weight gradually decreases, the crystal pulling speed also gradually decreases. Determining the first and second pulling speeds adjacent to the real-time crystal pulling speed from the mapping table means determining the two pulling speed values ​​closest to the real-time crystal pulling speed from the crystal pulling speed sequence: the first pulling speed and the second pulling speed. For example, based on the above relationship between the real-time remaining material weight and the first and second weights, it can be known that the first pulling speed is greater than the second pulling speed, the real-time crystal pulling speed is less than the first pulling speed, and greater than or equal to the second pulling speed, and the pulling speed is not equal to 0. Specifically, the crystal pulling speed sequence is arranged from largest to smallest, corresponding to the preset remaining material weight. If the real-time crystal pulling speed differs from the crystal pulling speed in the sequence, then two adjacent crystal pulling speeds in the sequence are selected as the first and second pulling speeds, with the real-time crystal pulling speed located between the two. If the real-time crystal pulling speed is equal to any pulling speed value in the sequence, then the crystal pulling speed greater than the real-time crystal pulling speed is selected as the first pulling speed, and the crystal pulling speed less than or equal to the real-time crystal pulling speed is selected as the second pulling speed. The first and second pulling speeds are adjacent values ​​in the sequence.

[0082] For example, the calculation formula for the second compensation power can be expressed as: P2=((H4-H3) / (J1-J2))*(J1-Ja). In the formula, P2 refers to the second compensation power in kW, H3 refers to the compensation power corresponding to the first pulling speed in kW, H4 refers to the compensation power corresponding to the second pulling speed in kW, J1 refers to the first pulling speed in mm / hr, J2 refers to the second pulling speed in mm / hr, and Ja refers to the real-time crystal pulling speed in mm / hr.

[0083] Understandably, this application, through the use of a mapping table, can obtain heating compensation power to adjust the crystal pulling heating power to adapt to changes in the real-time remaining material weight, thereby ensuring effective improvement in the stability, quality, and efficiency of crystal pulling production. It is known that the remaining material weight is a core factor affecting the solid-liquid interface temperature of the silicon material in the crucible, and the control of the crystal pulling speed essentially depends on the stability of the solid-liquid interface temperature. It is worth noting that changes in the crystal pulling speed may cause significant jumps in the corresponding compensation power. Therefore, this application selects the remaining material weight as an intermediate medium, associating it with the corresponding crystal pulling speed and compensation power through a mapping table. Based on this, the first and second compensation powers are calculated, making the adjustment logic of the crystal pulling heating power more linear and smoother, reducing potential drastic fluctuations in the crystal pulling heating power, and thus promoting the heating stability of the single crystal furnace. Furthermore, this application considers both the remaining material weight and the crystal pulling speed simultaneously, further improving the accuracy and stability of the crystal pulling heating power control.

[0084] In some embodiments, based on a preset arrangement order, the first weight difference of any preset remaining weight in the preset remaining weight sequence is greater than or equal to the second weight difference. The first weight difference is the weight difference between the preset remaining weight and the adjacent previous preset remaining weight, and the second weight difference is the weight difference between the preset remaining weight and the adjacent next preset remaining weight.

[0085] It should be understood that the preset remaining material weight sequence can be based on a preset arrangement order of increasing weight values, or it can be based on a preset arrangement order of decreasing weight values. In order to conform to the decreasing pattern of silicon material in the crucible, the embodiments of this application can arrange the preset remaining material weight sequence based on a preset arrangement order of decreasing weight values.

[0086] In this application, the first weight difference of any preset remaining material weight in the preset remaining material weight sequence is greater than or equal to a second weight difference. The first weight difference refers to the interval between the current preset remaining material weight and its previous preset remaining material weight. The second weight difference refers to the interval between the current preset remaining material weight and its next preset remaining material weight. Furthermore, in this application, the interval between two adjacent preset remaining material weights in the preset remaining material weight sequence is greater than or equal to the next interval. This means that the intervals in the preset remaining material weight sequence gradually decrease or remain unchanged, forming a decreasing or stable interval pattern.

[0087] For example, in some embodiments, the intervals in the preset remaining material weight sequence can remain constant. In other embodiments, the intervals in the preset remaining material weight sequence can decrease sequentially. In still other embodiments, the intervals in the preset remaining material weight sequence can first remain constant and then decrease in a pattern. In yet other embodiments, the intervals in the preset remaining material weight sequence can first remain constant and then decrease in an iterative pattern, that is, the intervals in the preset remaining material weight sequence can first remain constant and then decrease in a pattern that repeats itself.

[0088] In some embodiments, the interval values ​​in the preset remaining material weight sequence can be greater than or equal to 10 kg. For example, the interval values ​​in the preset remaining material weight sequence can be any value from 10 kg, 15 kg, 20 kg, 25 kg, etc., or any range between any two values. The difference between two adjacent intervals can be less than or equal to 5 kg. For example, the difference between two adjacent intervals can be any value from 0 kg, 1 kg, 2 kg, 3 kg, 4 kg, 5 kg, or any range between any two values. By reasonably setting the intervals and differences of the remaining material weight, the change in crystal pulling heating power is made more gradual, thereby improving the heating stability of the single crystal furnace.

[0089] Understandably, the first weight difference of any preset remaining material weight in the preset remaining material weight sequence is greater than or equal to the second weight difference. By reasonably arranging the interval of the preset remaining material weight, the heating power of crystal pulling can be precisely adjusted, thereby reducing the occurrence of crystal pulling abnormalities and improving production efficiency.

[0090] In some embodiments, the method for constructing the mapping table includes:

[0091] Obtain historical crystal pulling parameters, including historical residual material weight, historical crystal pulling speed, and historical compensation power.

[0092] Based on historical residual material weight and historical compensation power, the first fitting curve is obtained;

[0093] Based on historical residual material weight and historical crystal pulling speed, a second fitting curve was obtained.

[0094] The compensation power corresponding to each preset remaining material weight is obtained from the first fitting curve, and the crystal pulling speed corresponding to each preset remaining material weight is obtained from the second fitting curve.

[0095] It is important to understand that historical crystal pulling parameters refer to data obtained during past production processes that met the preset crystal pulling time and were free of crystal pulling anomalies. This data allows the heating compensation power obtained based on the mapping table to be adjusted to regulate the crystal pulling heating power, thereby controlling the crystal pulling temperature and reducing the occurrence of crystal pulling anomalies.

[0096] It's also necessary to understand how to obtain historical crystal pulling parameters, which include historical remaining material weight, historical crystal pulling speed, and historical compensation power. Specifically, historical remaining material weight includes the historical crystal pulling speed and compensation power corresponding to each historical remaining material weight. Using historical remaining material weight and historical compensation power as the basis for fitting, a first fitting curve is generated. This curve describes the relationship between remaining material weight and compensation power. From the first fitting curve, the compensation power corresponding to each preset remaining material weight can be extracted. That is, from the first fitting curve, the compensation power corresponding to the first weight and the compensation power corresponding to the second weight can be extracted. Similarly, using historical remaining material weight and historical crystal pulling speed as the basis for fitting, a second fitting curve is generated. This curve describes the relationship between remaining material weight and crystal pulling speed. From the second fitting curve, the crystal pulling speed corresponding to each preset remaining material weight is extracted. That is, from the second fitting curve, the crystal pulling speed corresponding to the first weight and the crystal pulling speed corresponding to the second weight can be extracted. Furthermore, based on the remaining material weight as an intermediate medium, the compensation power corresponding to the first pulling speed and the compensation power corresponding to the second pulling speed can be obtained. Finally, based on the first weight, the second weight, the compensation power corresponding to the first weight, the compensation power corresponding to the second weight, and the real-time remaining material weight, the first compensation power is obtained; based on the first pulling speed, the second pulling speed, the compensation power corresponding to the first pulling speed, the compensation power corresponding to the second pulling speed, and the real-time crystal pulling speed, the second compensation power is obtained.

[0097] It should be noted that each preset residual weight in the preset residual weight sequence can be pre-set according to the specific implementation plan requirements. Each preset residual weight in the preset residual weight sequence can also be obtained through multiple experimental verifications. Specifically, a set of preset residual weight sequences can be initially determined, and combined with a pre-constructed mapping table, a crystal pulling heating power control method is used to execute the crystal pulling process. By evaluating the crystal pulling effect, it is determined whether the settings of each residual weight in the preset residual weight sequence are appropriate. If inappropriate residual weight values ​​are found, the preset residual weight sequence is adjusted and updated accordingly, and the crystal pulling process is executed again. This cyclical process continues until the setting of each residual weight in the preset residual weight sequence ensures that the effect of the entire crystal pulling process using the crystal pulling heating power control method reaches a reasonable standard, thus obtaining the final preset residual weight sequence. When evaluating the crystal pulling effect, multiple aspects can be considered, including crystal pulling time and crystal pulling quality, to ensure that the crystal pulling heating power control process corresponding to the final residual weight sequence can optimize production efficiency and product quality.

[0098] Understandably, this application constructs a mapping table to optimize and control the heating power during the crystal pulling process based on the remaining material weight and crystal pulling speed. Furthermore, this application utilizes historical data for fitting to generate a parameter mapping table that guides production, providing a scientific basis for controlling the crystal pulling temperature to reduce the occurrence of crystal pulling anomalies.

[0099] In some embodiments, fitting to obtain a first fitted curve includes: fitting the first fitted curve using the median;

[0100] The process of fitting a second fitted curve includes: fitting the second fitted curve using the median.

[0101] It is important to understand that median fitting provides a robust fitting curve, resulting in a smoother adjustment of the crystal pulling heating power and promoting the stability of the heating control in the single crystal furnace. For example, this application can select 100 sets of control data with optimal historical control based on experimental data or theoretical models. These 100 sets of control data can come from multiple crystal pulling processes under the same conditions and environment. Each set of control data includes the historical remaining material weight, the historical crystal pulling speed corresponding to the historical remaining material weight, and the historical compensation power corresponding to the historical remaining material weight. By performing median fitting on the historical compensation power and historical crystal pulling speed corresponding to different remaining material weights in the 100 sets of data, the trend curves of the compensation power and crystal pulling speed corresponding to different remaining material weights are output, namely the first fitting curve and the second fitting curve. Furthermore, based on each preset remaining material weight in the preset remaining material weight sequence, the corresponding compensation power and crystal pulling speed can be obtained. The mapping table of compensation power and crystal pulling speed corresponding to the preset remaining material weight is shown in Table 1, as follows:

[0102] Table 1

[0103] Parameter name Standard value Preset residual weight (0-200) X1, X2, X3, X4, X5...... Compensation power (0-20) H1, H2, H3, H4, H5...... Crystal pulling speed (30-100) J1, J2, J3, J4, J5......

[0104] In Table 1, X1, X2, X3, X4, and X5 represent preset remaining material weights. The values ​​of X1, X2, X3, X4, and X5 decrease sequentially. The preset remaining material weight can be greater than 0 kg and less than or equal to 200 kg. X1 in Table 1 is the maximum value in the preset remaining material weight sequence. For example, X1 can be any value from 200 kg, 150 kg, 100 kg, 50 kg, 40 kg, 30 kg, 20 kg, and 10 kg, or a range between any two values. Furthermore, the remaining material weight values ​​after X1 can decrease sequentially based on preset intervals. Additionally, H1, H2, H3, H4, and H5 represent compensation power, which can range from 0 kW to 20 kW. H1 is the compensation power corresponding to the preset remaining material weight X1, H2 is the compensation power corresponding to the preset remaining material weight X2, H3 is the compensation power corresponding to the preset remaining material weight X3, and so on. Additionally, J1, J2, J3, J4, J5, etc., refer to the crystal pulling speed, which can range from 30 mm / hr to 100 mm / hr. Specifically, J1 is the crystal pulling speed corresponding to a preset remaining material weight x1, J2 is the crystal pulling speed corresponding to a preset remaining material weight x2, J3 is the crystal pulling speed corresponding to a preset remaining material weight x3, and so on. It should be noted that the numerical values ​​in Table 1 of this application embodiment are merely illustrative and do not constitute a limitation on the number of data points in the mapping table.

[0105] Understandably, obtaining the fitting curve is a crucial step in optimizing the mapping relationship between residual material weight, compensation power, and crystal pulling speed during monocrystalline silicon production. Using the median fitting method can effectively reduce the impact of outliers on the fitting results, improving the robustness and accuracy of the fitting.

[0106] In some embodiments, determining the heating compensation power based on the first compensation power and the second compensation power includes: determining the average of the first compensation power and the second compensation power as the heating compensation power.

[0107] For example, the calculation formula for the heating compensation power can be expressed as: P3 = (P1 + P2) / 2. In the formula, P3 refers to the heating compensation power in kW, P1 refers to the first compensation power in kW, and P2 refers to the second compensation power in kW.

[0108] Understandably, the heating compensation power is set to the average of the compensation power values ​​from two different sources. This method effectively balances the influence of different data sources, reduces the deviation that may be caused by a single data source, and ensures the stability of the heating process. Furthermore, this method has broad applicability and can achieve optimized heating control in various production environments.

[0109] It should be noted that the crystal pulling heating power control method of this application embodiment can be applied to scenarios where the furnace platform step is of constant diameter. Furthermore, the crystal pulling heating power control method is activated when the real-time remaining material weight meets the preset trigger weight, wherein the preset trigger weight can be equal to the maximum value in the preset remaining material weight sequence. Therefore, the crystal pulling heating power control method proposed in this application embodiment can be executed when the real-time remaining material weight in the crucible is less than or equal to the preset trigger weight during the crystal pulling process. Specifically, during the crystal pulling process, the real-time remaining material weight is acquired. When the real-time remaining material weight equals the preset trigger weight, the crystal pulling heating power of the single crystal furnace is collected as the reference crystal pulling heating power. Then, based on the furnace platform step being of constant diameter and the real-time remaining material weight being less than or equal to the preset trigger weight, the real-time heating compensation power can be determined in real-time using the crystal pulling heating power control method proposed in this application embodiment. The real-time heating compensation power is superimposed on the reference crystal pulling heating power to serve as the real-time crystal pulling heating power for heating the single crystal furnace. This allows the crystal pulling heating power control method to be triggered in a timely manner to control the crystal pulling temperature and reduce the occurrence of crystal pulling anomalies.

[0110] Please see Figure 4 As shown, Figure 4 This is a schematic flowchart of another crystal pulling heating power control method provided in an embodiment of this application.

[0111] For example, this application provides a method for regulating the heating power of crystal pulling as follows:

[0112] First, obtain crystal pulling parameters such as furnace steps, real-time remaining material weight, and real-time crystal pulling speed during the single crystal furnace crystal pulling process;

[0113] Then, based on the furnace step, it is determined whether it is a constant-diameter step. If the furnace step is not a constant-diameter step, the crystal pulling heating power control method is not executed. If the furnace step is a constant-diameter step, it is determined whether the real-time remaining material weight is less than or equal to the preset trigger weight. If the real-time remaining material weight is greater than the preset trigger weight, the crystal pulling heating power control method is not executed. If the real-time remaining material weight is less than or equal to the preset trigger weight, the crystal pulling heating power control method is executed. The preset trigger weight can be the maximum value in the preset remaining material weight sequence.

[0114] In summary, this application provides a method for regulating the heating power of crystal pulling, which can automatically control and adjust the heating power of the single crystal furnace, thereby controlling the temperature during the crystal pulling process, reducing the need for manual intervention, and thus reducing the workload of operators and improving production efficiency. Furthermore, this application, based on real-time crystal pulling parameters, controls the crystal pulling temperature through compensation power corresponding to the real-time remaining material weight and the real-time crystal pulling speed, thereby improving the stability of the crystal pulling process and reducing the occurrence of crystal pulling anomalies.

[0115] In addition, this application embodiment also provides a crystal pulling heating power control model, which may include:

[0116] The data acquisition module is used to acquire real-time crystal pulling parameters and reference crystal pulling heating power;

[0117] The power adjustment module is used to determine the heating compensation power based on real-time crystal pulling parameters and a pre-built mapping table;

[0118] The execution module is used to superimpose the heating compensation power onto the reference crystal pulling heating power. The superimposed heating power is used as the heating power of the furnace heater to regulate the crystal pulling temperature.

[0119] Furthermore, the crystal pulling heating power control model can use real-time residual material weight and real-time crystal pulling speed data as model inputs, and derive the heating compensation power according to the model logic. This compensation power, along with the baseline crystal pulling heating power, is used as the heating power of the furnace heater to control the furnace and thus the crystal pulling temperature. This improves the stability of the crystal pulling process and reduces the occurrence of crystal pulling anomalies. Moreover, automatically controlling and adjusting the heating power of the single crystal furnace allows for temperature control during the crystal pulling process, reducing the need for manual intervention, thereby reducing the workload of operators and improving production efficiency.

[0120] It should be understood that the superimposed model of this application embodiment is used to apply the above-mentioned crystal pulling heating power control method. The content of the above method embodiment is applicable to this model embodiment. The specific functions implemented by this model embodiment are the same as those of the above method embodiment. Therefore, the superimposed model can have the technical features and beneficial effects of the crystal pulling heating power control method, which will not be repeated here.

[0121] Please see Figure 5 As shown, Figure 5 This is a schematic diagram of a crystal pulling heating power control device provided in an embodiment of this application.

[0122] This application embodiment also provides a crystal pulling heating power control device, the device comprising:

[0123] The first module is used to obtain real-time crystal pulling parameters, including real-time remaining material weight and real-time crystal pulling speed.

[0124] The second module is used to determine the current heating compensation power based on the real-time remaining material weight, the real-time crystal pulling speed, and a pre-built mapping table, so as to regulate the current crystal pulling heating power through the heating compensation power. The mapping table includes the mapping relationship between the remaining material weight, the crystal pulling speed, and the compensation power.

[0125] It should be understood that the crystal pulling heating power control device of this application embodiment is used to apply the crystal pulling heating power control method described above. The content of the above method embodiment is applicable to this device embodiment. The specific functions implemented by this device embodiment are the same as those of the above method embodiment. Therefore, the crystal pulling heating power control device can have the technical features and beneficial effects of the crystal pulling heating power control method, which will not be repeated here.

[0126] This application embodiment also provides a crystal pulling heating power control device, the device comprising:

[0127] At least one processor;

[0128] At least one memory is provided for storing at least one program; when the at least one program is executed by at least one processor, the at least one processor implements the crystal pulling heating power control method in the above embodiments.

[0129] It is evident that the content of the above method embodiments is applicable to this device embodiment. The specific functions implemented in this device embodiment are the same as those in the above method embodiments, and the beneficial effects achieved are also the same as those achieved in the above method embodiments. Therefore, they will not be repeated here.

[0130] Accordingly, this application also provides a computer-readable storage medium storing a processor-executable program, which, when executed by a processor, is used to perform the crystal pulling heating power control method in the above embodiments.

[0131] In the embodiments of this application, the storage medium may be a magnetic disk, an optical disk, a read-only memory (ROM), or a random access memory (RAM), etc.

[0132] Similarly, the content of the above method embodiments is applicable to this storage medium embodiment. The specific functions implemented in this storage medium embodiment are the same as those in the above method embodiments, and the beneficial effects achieved are also the same as those achieved in the above method embodiments, so they will not be repeated here.

[0133] For example, the crystal pulling heating power control method, apparatus, equipment and storage medium of the present application embodiment can be applied to determine the heating compensation power in the crystal pulling process, so as to control the crystal pulling temperature of the single crystal furnace through the heating compensation power, so as to reduce the occurrence of crystal pulling abnormalities.

[0134] It should be noted that, for the crystal pulling heating power control method of the embodiments of this application, those skilled in the art can understand that all or part of the process of implementing the crystal pulling heating power control method of the embodiments of this application can be accomplished by controlling the relevant hardware through a computer program. The computer program can be stored in a computer-readable storage medium, such as stored in the memory of an electronic device, and executed by at least one processor in the electronic device. During the execution process, it can include the process of the embodiments of the crystal pulling heating power control method.

[0135] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.

[0136] The foregoing has provided a detailed description of a method, apparatus, device, and storage medium for regulating the heating power of crystal pulling according to embodiments of this application. Specific examples have been used to illustrate the principles and implementation methods of this application. The descriptions of the above embodiments are only for the purpose of helping to understand the method and core ideas of this application. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of this application. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. A method for regulating the heating power of crystal pulling, characterized in that, include: Obtain real-time crystal pulling parameters, including real-time remaining material weight and real-time crystal pulling speed; Based on the real-time remaining material weight, the real-time crystal pulling speed, and a pre-built mapping table, the current heating compensation power is determined so as to regulate the current crystal pulling heating power. The mapping table includes the mapping relationship between the remaining material weight, the crystal pulling speed, and the compensation power.

2. The crystal pulling heating power control method according to claim 1, characterized in that, Applied to the constant diameter crystal pulling process; The determination of the current heating compensation power based on the real-time remaining material weight, the real-time crystal pulling speed, and a pre-built mapping table includes: Based on the mapping table, obtain the first compensation power corresponding to the real-time remaining material weight and the second compensation power corresponding to the real-time crystal pulling speed; The current heating compensation power is determined based on the first compensation power and the second compensation power.

3. The crystal pulling heating power control method according to claim 2, characterized in that, The mapping table includes a preset residual material weight sequence, and the crystal pulling speed and compensation power corresponding to each preset residual material weight in the preset residual material weight sequence; Obtaining the first compensation power corresponding to the real-time remaining material weight and the second compensation power corresponding to the real-time crystal pulling speed based on the mapping table includes: Determine the first weight and the second weight adjacent to the real-time remaining weight from the preset remaining weight sequence; Determine the first and second pulling speeds adjacent to the real-time crystal pulling speed from the mapping table; The first compensation power is obtained based on the first weight, the second weight, the compensation power corresponding to the first weight, the compensation power corresponding to the second weight, and the real-time remaining weight. The second compensation power is obtained based on the first pulling speed, the second pulling speed, the compensation power corresponding to the first pulling speed, the compensation power corresponding to the second pulling speed, and the real-time crystal pulling speed.

4. The crystal pulling heating power control method according to claim 3, characterized in that, Based on a preset arrangement order, the first weight difference of any preset remaining material weight in the preset remaining material weight sequence is greater than or equal to the second weight difference. The first weight difference is the weight difference between the preset remaining material weight and the adjacent previous preset remaining material weight, and the second weight difference is the weight difference between the preset remaining material weight and the adjacent next preset remaining material weight.

5. The crystal pulling heating power control method according to claim 3, characterized in that, The method for constructing the mapping table includes: Obtain historical crystal pulling parameters, including historical residual material weight, historical crystal pulling speed, and historical compensation power; Based on the historical residual material weight and the historical compensation power, a first fitting curve is obtained; Based on the historical remaining material weight and the historical crystal pulling speed, a second fitting curve is obtained; Obtain the compensation power corresponding to each preset remaining material weight from the first fitting curve, and obtain the crystal pulling speed corresponding to each preset remaining material weight from the second fitting curve.

6. The crystal pulling heating power control method according to claim 5, characterized in that, The process of obtaining the first fitted curve includes: obtaining the first fitted curve by fitting the median; The process of obtaining the second fitted curve includes: obtaining the second fitted curve by fitting the median.

7. The crystal pulling heating power control method according to claim 2, characterized in that, Determining the current heating compensation power based on the first compensation power and the second compensation power includes: The average of the first compensation power and the second compensation power is determined as the current heating compensation power.

8. A crystal pulling heating power control device, characterized in that, include: The first module is used to acquire real-time crystal pulling parameters, including real-time remaining material weight and real-time crystal pulling speed. The second module is used to determine the current heating compensation power based on the real-time remaining material weight, the real-time crystal pulling speed, and a pre-built mapping table, so as to regulate the current crystal pulling heating power through the heating compensation power. The mapping table includes the mapping relationship between the remaining material weight, the crystal pulling speed, and the compensation power.

9. A crystal pulling heating power control device, characterized in that, include: At least one processor; At least one memory for storing at least one program; When the at least one program is executed by the at least one processor, the at least one processor implements the crystal pulling heating power control method as described in any one of claims 1 to 7.

10. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores a processor-executable program, which, when executed by a processor, performs the crystal pulling heating power control method as described in any one of claims 1 to 7.

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