Nanocrystal diamond with amorphous interface layer

Abstract

Methods of depositing nanocrystal diamond films are described. The method can be used for manufacturing integrated circuits. Methods include treating a substrate with a plasma to form a treated substrate surface, incubating the treated substrate with a carbon-rich plasma to nucleate diamond particles on the treated substrate surface, and then treating the substrate with a plasma to form a nanocrystal diamond film. The resulting nanocrystal diamond film is formed on the oxide-rich amorphous interface layer between the nanocrystal diamond film and the silicon substrate.

Description

TECHNICAL FIELD

[0001] Embodiments of the present disclosure relate to the field of electronic device manufacturing, and in particular, to integrated circuit (IC) manufacturing. More particularly, embodiments of the present disclosure provide methods of depositing diamond-like carbon hardmask films on amorphous interface layers. Also disclosed are film stacks comprising diamond-like carbon directly on an amorphous layer, which is directly on a substrate. BACKGROUND

[0002] As the semiconductor industry introduces new generations of integrated circuits (ICs) with higher performance and greater functionality, the density of the elements forming these ICs increases, while the size, dimensions, and spacing between individual components or elements decreases. While in the past, this reduction was limited by the ability to use photolithography to define structures, element geometries with dimensions measured in μm or nm have introduced new limiting factors, such as the conductivity of metallic elements, the dielectric constant of insulating materials used between elements, or challenges in 3D-NAND or DRAM processes. These limitations can be addressed by a hardmask that is more durable and has higher hardness.

[0003] Diamond is a material with high hardness, chemical inertness, high thermal conductivity, and good optical transparency, which is promising in microelectronic applications. Diamond has become a promising candidate for numerous microelectronic applications.

[0004] However, the large difference in surface energy between diamond and silicon (6 J cm -2 and 1.5 J cm -2 , the low sticking coefficient of gaseous precursors (e.g., hydrocarbon radicals), and strong competition from non-diamond phases often result in poor diamond nucleation density on untreated silicon (about 10 4 cm -2 ).

[0005] To address the problem of poor diamond nucleation density, the substrate is often pre-treated (e.g., mechanical abrasion or micro-cutting) and / or seeded with nanodiamond (ND) particles prior to deposition. However, this seeding method consists of multiple solution-based procedures, which are tedious and incompatible with cleanroom.

[0006] Alternatively, bias-enhanced nucleation (BEN) is one of the few nucleation techniques that can be performed in situ. It involves bombarding a negatively charged biased substrate surface with a methane-rich (4-10%) ionized gas species, resulting in a carbide layer with improved substrate adhesion. Using BEN, diamond nucleation densities greater than 10 11 cm -2Unfortunately, the use of BEN is limited by the presence of substrate surface damage (e.g., in the form of holes with diameters up to 2-3 μιη), the difficulty of applying a uniform bias over large areas, and the requirement of a conductive substrate.

[0007] For both seeding techniques and BEN, several researchers have reported the presence of a carbon-rich interface layer between the nano-crystalline diamond (NCD) film and the substrate. One effective theory is that this carbon-rich interface layer is critical for the subsequent formation of diamond nuclei. While the role of SiC in diamond nucleation is not clear, it is generally believed that this interface layer is composed mainly of silicon and carbon, with minimal oxygen (< 10 19 cm -3 or 0.1 atomic %).

[0008] Oxides, and in particular silicon oxide, are more readily understood and widely used than silicon carbide. Thus, there is a need for a method of forming a nano-crystalline diamond (NCD) film on an oxygen-containing material. SUMMARY

[0009] One or more embodiments of the present disclosure relate to a method of forming a nano-crystalline diamond film. The method includes exposing a silicon substrate to a first plasma from a first plasma source. The first plasma source includes one or more of C x H y , carbon dioxide (C02), hydrogen (H2), nitrogen (N2), and argon (Ar) to provide a treated substrate, where y > x. The treated substrate is incubated with a gas stream including a hydrocarbon and a second plasma to nucleate diamond particles and form a seed substrate. The seed substrate is exposed to a third plasma having a power greater than 50 W to form a nano-crystalline diamond film. After forming the nano-crystalline diamond film, the nano-crystalline diamond film is directly on an oxide-rich amorphous layer, which is directly on the silicon substrate.

[0010] Additional embodiments of the present disclosure relate to a method of forming a diamond film. The method includes exposing a treated substrate to a gas stream including a hydrocarbon to nucleate diamond particles on a top surface of the substrate. The substrate includes an exposed oxide-rich amorphous layer. The diamond particles are exposed to a plasma having a power greater than 50 W to form a nano-crystalline diamond film on the top surface of the substrate that is not silicon.

[0011] Further embodiments of the present disclosure relate to an electronic component including a silicon substrate, an amorphous oxide layer directly on the silicon substrate, and a nano-crystalline diamond film directly on the amorphous oxide layer. BRIEF DESCRIPTION OF DRAWINGS

[0012] For a more complete understanding of the above-described features of the present disclosure, reference is made to the detailed description of the embodiments taken in conjunction with the accompanying drawings. In which, like references indicate like parts throughout the several views. However, it should be noted that the drawings are merely schematic and are not drawn to scale. Certain features of the disclosure can also be set forth in, or can invest, additional claims directed to other

[0013] Figure 1 A process flow diagram of a method for depositing nanocrystalline diamond film is shown in accordance with one or more embodiments; and

[0014] Figures 2A-2E A schematic cross-sectional view of a substrate within a processing chamber during processing is shown in accordance with one or more embodiments of the present disclosure. DETAILED DESCRIPTION

[0015] Before several illustrative embodiments of the present disclosure are described, it is to be understood that the present disclosure is not limited to the details of construction or process steps set forth in the following description. The present disclosure is capable of other embodiments and of being practiced or being carried out in various ways.

[0016] As used in this specification and the appended claims, the terms "precursor", "reactant", "reactive gas", and similar terms are used interchangeably to mean any gaseous species that can react with a substrate surface.

[0017] The term "about" as used herein means approximate or nearly and in the context of a numerical value or range means a variation of ±15% or less of the numerical value. For example, values that differ by ±14%, ±10%, ±5%, ±2%, ±1%, ±0.5%, or ±0.1% would meet the definition of "about" as defined herein.

[0018] "substrate" as used herein means any substrate or material surface formed on a substrate that is subjected to film processing during fabrication. For example, substrate surfaces on which processing can be performed include materials such as silicon, silicon dioxide, strained silicon, silicon on insulator (SOI), carbon doped silicon oxides, amorphous silicon, doped silicon, germanium, gallium arsenide, glass, sapphire, and any other material susceptible to surface modification, depending on the application. Substrates include, without limitation, semiconductor wafers. Substrates can be exposed to pre-processing prior to, during, or after the disclosed methods to polish, etch, reduce, oxidize, hydroxylate, anneal, and / or bake the substrate surface.

[0019] The substrate can be any substrate capable of having material deposited thereon, such as a silicon substrate, a III-V compound substrate, a silicon germanium (SiGe) substrate, an epitaxial substrate, a silicon-on-insulator (SOI) substrate, a display substrate such as a liquid crystal display (LCD), a plasma display, an electro luminescence (EL) lamp display, a solar array, a solar panel, a light emitting diode (LED) substrate, a semiconductor wafer, or the like.

[0020] In some embodiments, the substrate comprises or consists essentially of a dielectric. In some embodiments, the substrate comprises or consists essentially of silicon. In some embodiments, the substrate comprises or consists essentially of silicon oxide, silicon nitride, or silicon carbide. In some embodiments, the substrate is not a silicon substrate. In some embodiments, the substrate is substantially free of any native oxide prior to processing according to the disclosed methods. As used in this regard, a substrate that is "substantially free of any native oxide" contains less than 2% of the surface atoms of the substrate material as oxygen atoms. In some embodiments, the surface oxide of the substrate is cleaned off prior to processing by the disclosed methods.

[0021] In addition to film processing directly on the surface of the substrate itself, in the present disclosure any of the film processing steps disclosed can be performed on an underlayer formed on the substrate, as disclosed in greater detail below, and the term "substrate surface" is intended to include such underlayer as the context indicates. Thus, for example, where a film / layer or partial film / layer has been deposited onto the substrate surface, the exposed surface of the newly deposited film / layer becomes the substrate surface.

[0022] As used in the present disclosure and the appended claims, with respect to a film or layer of a film, the term "on" includes the film or layer being directly on a surface (e.g., a substrate surface) as well as there being one or more underlayers between the film or layer and the surface (e.g., a substrate surface). Thus, in some embodiments, the phrase "on a substrate surface" is intended to include one or more underlayers. In other embodiments, the phrase "directly on" refers to a layer or film in contact with a surface (e.g., a substrate surface) without intervening layers. Thus, the phrase "a layer directly on a substrate surface" refers to a layer in direct contact with a substrate surface without layers in between.

[0023] As used herein, the phrase "nanocrystalline diamond" refers to a film of diamond solid grown on a substrate (e.g., silicon). In one or more embodiments, the nanocrystalline is a result of enhanced re-nucleation reactions in diamond growth, where the growth of diamond crystals is interrupted due to fluctuations in the surrounding environment, such as fluctuations in the amount of free radical species, temperature, and pressure. In one or more embodiments, the nanocrystalline diamond layer is composed primarily of nanospherical or nanocolumnar small diamond crystals and amorphous carbon typically distributed between surrounding crystals or accumulated in grain boundaries. Nanocrystalline diamond is used as a hard mask material in semiconductor applications due to its chemical inertness, optical transparency, and good mechanical properties.

[0024] One or more embodiments of the present disclosure advantageously provide a new method for in-situ nucleation and growth of nanocrystalline diamond films. Embodiments describe the development and utilization of plasma and gas chemistry for substrate processing as well as nucleation and growth of nanocrystalline diamond films. In one or more embodiments, no previous solution-based substrate processing / cleaning methods or additional seeding methods such as sonicating with nanodiamonds or mechanical scratching are used. Also, no unique chemicals are required during the process.

[0025] Some embodiments of the present disclosure advantageously provide a method of forming a nanocrystalline diamond film on an oxide-rich amorphous interfacial layer. Without being bound by theory, the inventors have found that the oxide-rich interfacial layer contrasts with previously reported interfacial layers that are substantially SiC. Furthermore, it is believed that the presence of the oxide interfacial layer provides a different understanding of the growth mechanism of NCD films and enables growth on previously unreported substrate materials.

[0026] In one or more embodiments, a nanocrystalline diamond layer is formed on a substrate. The process of one or more embodiments advantageously produces a nanocrystalline diamond layer with high density, high hardness, high etch selectivity, low stress, and excellent thermal conductivity.

[0027] In semiconductor processing, hard masks are used as etch stop layers. Ashable hard masks have a chemical composition that can be removed by a technique known as ashing once the hard masks have served their purpose. Ashable hard masks are typically composed of carbon and hydrogen, along with trace amounts of one or more additional elements (e.g., nitrogen, fluorine, boron, silicon).

[0028] In typical applications, after etching, the hardmask has served its purpose and is removed from the underlying layer. This is typically accomplished at least in part by ashing (also known as "plasma ashing" or "dry stripping"). The substrate, typically a partially fabricated semiconductor wafer, having the hardmask to be ashed is placed in a chamber under vacuum and oxygen is introduced and RF power is applied, creating oxygen radicals and ions (i.e., an oxygen plasma). The plasma reacts with the hardmask, oxidizing it to water, carbon monoxide, and carbon dioxide. In some cases, complete removal of the hardmask can be accomplished by performing an additional wet or dry etching process after ashing, for example when the ashable hardmask leaves any residue that cannot be removed by ashing alone.

[0029] Hardmask layers are typically used in narrow and / or deep contact etching applications, where the thickness of the photoresist can not be sufficient to shadow the underlying layer. This is particularly applicable when there is a critical dimension shrinkage.

[0030] V-NAND or 3D-NAND structures are used in flash memory applications. V-NAND devices have a vertical stack of a large number of cells arranged in blocks of NAND structures. As used herein, the term "3D-NAND" refers to a type of electronic (solid-state) non-volatile computer storage memory in which memory cells are stacked in multiple layers. 3D-NAND memory typically includes a plurality of memory cells including suspended gate transistors. Conventionally, 3D-NAND memory cells include a plurality of NAND memory structures arranged in three dimensions around a bit line.

[0031] An important step in 3D-NAND technology is the slit etch. As the number of levels in each technology node increases, the thickness of the hardmask film must increase proportionally to withstand the high aspect ratio etch profile for control of the slit etch profile. Currently, amorphous carbon (aC:H) films are used due to their high hardness after slit etch and ease of removal. However, amorphous carbon hardmask films have delamination issues and poor morphology, resulting in columnar striations.

[0032] One or more implementations of the present disclosure are described with reference to the accompanying drawings. Figure 1 A process flow diagram of a method 10 according to one or more implementations is shown. Figures 2A-2E A schematic cross-sectional view of a substrate 102 being processed by the method 10 according to one or more implementations is shown.

[0033] Reference is made to Figure 1 and Figures 2A-2B, a method 10 of forming a nanocrystalline fully coalesced diamond film 120 is described. In some embodiments, the method 10 includes, at operation 12, treating a substrate 102 with a first plasma 101 from a first plasma source 112 to form a treated substrate 104. The substrate 102 surface is exposed to the first plasma 101 in a first plasma process chamber 100 for a first plasma time period T p1 to form the treated substrate 104.

[0034] The first plasma process chamber 100 can be any suitable plasma chamber with any suitable plasma source, such as, but not limited to, remote, microwave, capacitively coupled plasma (CCP), or inductively coupled plasma (ICP). In some embodiments, the flow rates and other process parameters described below are for a 300 mm substrate. It should be understood that these parameters can be adjusted based on the size of the substrate being treated and the type of chamber used without departing from the methods disclosed herein. In particular embodiments, the first plasma 101 includes one or more of a capacitively coupled plasma, an inductively coupled plasma, a pulsed discharge plasma, a microwave plasma, a hot filament, or an electron cyclotron resonance plasma.

[0035] In some embodiments, the first plasma 101 includes one or more of an organic species having the empirical formula C x H y , argon (Ar), nitrogen (N2), carbon dioxide (CO2), or hydrogen (H2), where y > x.

[0036] In some embodiments, the first plasma 101 is generated at a power greater than or equal to about 50 Watts, greater than or equal to 100 Watts, or greater than or equal to 150 Watts. In one or more embodiments, the plasma treatment can be performed at any suitable power. In one or more embodiments, the power is greater than or equal to about 50 W. In other embodiments, the power is in a range from about 50 W to about 12 kW, or in a range from about 100 W to about 10 kW, or in a range from about 100 kW to about 5 kW, or in a range from about 100 W to about 1 kW.

[0037] In some embodiments, the substrate 102 is maintained at a temperature in a range from about 20 °C to about 600 °C during formation of the treated substrate 104.

[0038] In some embodiments, forming the treated substrate 104 includes exposure to at least one cycle of the first plasma 101. In some embodiments, forming the treated substrate 104 includes exposure to a range of 1 to about 1000 cycles of the first plasma 101.

[0039] The first plasma process chamber 100 of some embodiments includes a first plasma source 112, which can comprise one or more of a showerhead, an electrode, a resonator, a linear antenna, and the like. In one or more embodiments, the first plasma source 112 is positioned at a first distance D1 from a top surface of the substrate 102. In some embodiments, the first distance D1 is greater than or equal to 10 mm, 15 mm, 20 mm, or 25 mm.

[0040] While not shown in the figures, in some embodiments, operation 12 forms an oxide-rich amorphous layer directly on the substrate 102. In other words, in some embodiments, the treated substrate 104 includes an oxide-rich amorphous layer. At this point in the method 10, the oxide-rich amorphous layer includes about 50 atomic % to about 70 atomic % oxygen. In some embodiments, the oxide-rich amorphous layer includes about 5 atomic % to about 75 atomic %, about 10 atomic % to about 75 atomic %, about 20 atomic % to about 70 atomic %, about 35 atomic % to about 70 atomic %, or about 50 atomic % to about 70 atomic % oxygen. At this point in the method 10, the oxide-rich amorphous layer has a thickness less than or equal to about 5 nm, less than or equal to about 10 nm, less than or equal to about 20 nm, or less than or equal to about 50 nm.

[0041] Referring to Figure 1 and Figure 2C At operation 14, the treated substrate 104 is incubated with the carbon-rich gas flow 108 and the second plasma 106 to nucleate diamond particles, forming a diamond seed layer 110 on the top surface of the substrate 102. In some embodiments, the diamond seed layer 110 on the substrate 102 (or treated substrate 104) is referred to as a seed substrate.

[0042] In one or more embodiments, the diamond seed layer 110 is formed in a second plasma process chamber 150, with the second plasma 106 generated by a second plasma source 114. In other embodiments not shown, the diamond seed layer 110 is formed in the first plasma process chamber 100, with the second plasma 106 generated by the first plasma source 112. In some embodiments, the second plasma 106 can be generated by the first plasma source 112, but using a different gas (composition).

[0043] The second plasma process chamber 150 and the first plasma process chamber 100 can be any suitable plasma chamber with any suitable plasma source, such as, but not limited to, remote, microwave, capacitively coupled plasma (CCP), or inductively coupled plasma (ICP). In some embodiments, the flow rates and other processing parameters described below are for 300 mm substrates. It should be understood that these parameters can be adjusted based on the size of the substrate being processed and the type of chamber used without departing from the embodiments disclosed herein. In particular embodiments, the second plasma 106 includes one or more of a capacitively coupled plasma, an inductively coupled plasma, a pulsed discharge plasma, a microwave plasma, a hot filament, or an electron cyclotron resonance plasma.

[0044] In some embodiments, the gas flow 108 (and the resulting second plasma 106) includes a hydrocarbon. In one or more embodiments, the hydrocarbon has the general formula C m H n where m is in the range of 1 to 120 and n is in the range of 2 to 242. In particular embodiments, the hydrocarbon is one or more selected from methane (CH4), ethane (C2H6), propane (C3H8), butane (C4H 10 ), pentane (C5H 12 ), hexane (C6H 14 ), heptane (C7H 16 ), ethylene (C2H4), propylene (C3H6), butylene (C4H8), pentylene (C5H 10 ), hexylene (C6H 12 ), heptylene (C7H 14 ), acetylene (C2H2), propyne (C3H4), butyne (C4H6), pentyne (C5H8), hexyne (C6H 10 ), and heptyne (C7H 12 ).

[0045] In one or more embodiments, the second plasma 106 can include one or more of argon (Ar), nitrogen (N2), carbon dioxide (CO2), or hydrogen (H2) in addition to the hydrocarbon. In one or more embodiments, the gas flow 108 including the hydrocarbon is co-flowed with one or more of argon (Ar), nitrogen (N2), carbon dioxide (CO2), or hydrogen (H2) during plasma generation. In one or more embodiments, the gas flow 108 includes 5% to 90% of the hydrocarbon.

[0046] In some embodiments, the second plasma 106 is generated at a power less than or equal to about 15 kilowatts (kW), less than or equal to about 12 kW, less than or equal to about 10 kW, less than or equal to about 8 kW, less than or equal to about 6 kW, less than or equal to about 5 kW, or less than or equal to about 4 kW. In some embodiments, the gas flow 108 is ignited at a power less than or equal to about 12 kW to form the second plasma 106. In some embodiments, the second plasma 106 is a pulsed plasma having a duty cycle less than or equal to 90%, less than or equal to 70%, less than or equal to 65%, less than or equal to 60%, less than or equal to 55%, less than or equal to 50%, less than or equal to 45%, or less than or equal to 40% at a frequency in a range from about 20 Hz to about 5000 Hz, in a range from about 60 Hz to about 90 Hz, or in a range from about 70 Hz to about 80 Hz. In some embodiments, the second plasma 106 has a power less than or equal to about 6 kW and a duty cycle less than or equal to 50% at a frequency in a range from about 70 Hz to about 80 Hz. In some embodiments, the substrate 102 (or treated substrate 104) is maintained at a temperature in a range from about 50 °C to about 600 °C during formation of the diamond seed layer 110.

[0047] In some embodiments, the substrate 102 (or treated substrate 104) is incubated with the gas flow 108 and the second plasma 106 for a time period of 1 second to about 10 hours. In some embodiments, the substrate 102 (or treated substrate 104) is incubated with the gas flow 108 and the second plasma 106 for a time period of less than or equal to about 4 hours, less than or equal to about 3 hours, less than or equal to about 2 hours, or less than or equal to about 1 hour.

[0048] In some embodiments, the substrate 102 (or treated substrate 104) is positioned at a second distance D2 from the first plasma source 112 or the second plasma source 114. In some embodiments, the substrate 102 (or treated substrate 104) is positioned at a second distance D2 less than or equal to about 12 cm, less than or equal to about 10 cm, or less than or equal to about 8 cm from the first plasma source 112 or the second plasma source 114. In some embodiments, the second distance is greater than or equal to 1 cm. In some embodiments, the first plasma source 112 or the second plasma source 114 includes a showerhead that functions as an electrode. In some embodiments, the second plasma source 114 includes a microwave plasma source.

[0049] Although not shown in the figure, in some embodiments, operation 14 forms an oxide-rich amorphous layer directly on the surface of the substrate. Alternatively, in some embodiments, the oxide-rich amorphous layer formed by operation 12 remains present after operation 14. Whenever formed, it can be variously noted that, in some embodiments, the seed substrate includes an oxide-rich amorphous layer. Further, the oxide-rich amorphous layer is directly on the substrate 102, between the diamond core layer 110 and the substrate 102. At this point in the method 10, the oxide-rich amorphous layer includes at least 5 atomic % or at least 20 atomic % oxygen. At this point in the method 10, the oxide-rich amorphous layer has a thickness of less than or equal to about 50 nm, less than or equal to about 20 nm, less than or equal to about 10 nm, less than or equal to about 5 nm, or less than or equal to about 3 nm.

[0050] At operation 16, a nanocrystalline diamond film 118 is grown from the diamond core layer 110. As used in this manner, the term "grown" means that the nanocrystalline diamond film 118 is formed from the diamond core layer 110 and that the diamond core layer 110 can be incorporated into the nanocrystalline diamond film 118. The nanocrystalline diamond film 118 can be grown or deposited epitaxially by any suitable technique known to those of skill in the art.

[0051] In some embodiments, the nanocrystalline diamond film 118 is grown in the second plasma process chamber 150 using the third plasma 125. In other embodiments, the nanocrystalline diamond film 118 is grown in the first plasma process chamber 100 using the third plasma 125. Thus, in one or more embodiments, the first plasma process chamber 100 and the second plasma process chamber 150 are the same chamber. In some embodiments, the nanocrystalline diamond film 118 is grown using a conductive or inductively coupled plasma, a microwave plasma, a pulsed discharge plasma, a microwave plasma, a hot filament, or an electron cyclotron resonance plasma. In some embodiments, the nanocrystalline diamond film 118 is grown using a microwave plasma.

[0052] In some embodiments, the third plasma 125 includes a microwave plasma having a power greater than or equal to about 50 W, greater than or equal to about 100 W, greater than or equal to about 500 W, greater than or equal to about 1000 W (1 kW), greater than or equal to about 3 kW, or greater than or equal to about 5 kW, with a duty cycle greater than or equal to about 60%, greater than or equal to about 70%, or greater than or equal to about 80%.

[0053] In some embodiments, during exposure to the third plasma 125, the substrate 102 is maintained at a temperature ranging from about 25°C to about 750°C. In some embodiments, during exposure to the third plasma 125, the substrate 102 is maintained at a temperature greater than or equal to about 25°C, greater than or equal to about 50°C, greater than or equal to about 75°C, greater than or equal to about 100°C, greater than or equal to about 150°C, greater than or equal to about 200°C, or greater than or equal to about 250°C.

[0054] During operation 16, the substrate 102 is positioned at a distance D3 from the third plasma source 130. In some embodiments, the third plasma 125 may be generated by the first plasma source 112 and / or the second plasma source 114, but using different gases (compositions) or generated by different third plasma sources 130. In some embodiments, distance D3 is the same as distance D2. In some embodiments, the third distance D3 is less than the second distance D2. In some embodiments, the substrate 102 is positioned at a distance less than or equal to about 12 cm, less than or equal to about 10 cm, or less than or equal to about 8 cm from the third plasma source 130, or from the first plasma source 112, or from the second plasma source 114.

[0055] refer to Figure 2E In one or more embodiments, after a long main growth period, the high nucleation density on the seed substrate leads to the formation of a fully aggregated nanocrystalline diamond film 120. In one or more embodiments, Figure 2E The appearance of the fully aggregated nanocrystalline diamond film 120 after method 10 is shown. The difference between the nanocrystalline diamond film 118 and the fully aggregated nanocrystalline diamond film 120 is that in the nanocrystalline diamond layer 118, diamond nuclei from the diamond core layer 110 grow into individual, larger diamond particles. However, these larger diamond particles are isolated from each other. As these large diamond particles continue to grow in size, they eventually come into contact with adjacent particles and begin to merge / aggregate. This forms a dense, stacked nanocrystalline diamond film, which becomes the fully aggregated nanocrystalline diamond film 120.

[0056] Although not shown in the figure, in some embodiments, operation 16 forms an oxide-rich amorphous layer directly on the substrate surface. Alternatively, in some embodiments, the oxide-rich amorphous layer formed by operation 12 or operation 14 remains present after operation 16. Whenever formed, it can be variously stated that, in some embodiments, the substrate includes an oxide-rich amorphous layer. Further, the oxide-rich amorphous layer is directly on the substrate 102, between the fully coalesced nanocrystalline diamond film 120 and the substrate 102. At this point in the method 10, the oxide-rich amorphous layer contains at least 5 atomic %, at least 10 atomic %, at least 20 atomic %, or at least 30 atomic % oxygen. At this point in the method 10, the oxide-rich amorphous layer has a thickness of less than or equal to about 50 nm, less than or equal to about 20 nm, or less than or equal to about 10 nm.

[0057] One or more embodiments of the present disclosure relate to an electronic component including a nanocrystalline diamond film. The nanocrystalline diamond film is directly on an oxide-rich amorphous interface layer, which is directly on a silicon substrate. In some embodiments, the electronic component is formed by a method disclosed herein.

[0058] To facilitate description, spatially relative terms, such as "below," "beneath," "lower," "above," "upper," and the like, can be used herein for describing elements' and features' relationships to one another as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientations depicted in the figures. For example, if a device is inverted, elements described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary term "below" can encompass both an orientation of above and below. The device can be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

[0059] The use of the terms "a" and "an" and "the" and similar referents in the context of describing the materials and methods discussed herein (especially in the context of the following claims) are to be construed to cover both the singular and the plural, unless otherwise indicated herein or clearly contradicted by context. Recitation of ranges of values herein are merely intended to serve as a shorthand method of referring individually to each separate value falling within the range, unless otherwise indicated herein, and each separate value is incorporated in the specification as if it were individually recited herein. All methods described herein can be performed in any suitable order unless otherwise indicated herein or otherwise clearly contradicted by context. The use of any and all examples, or exemplary language (e.g., "such as") provided herein is intended merely to better illuminate the materials and methods and does not pose a limitation on the scope of the disclosure unless otherwise claimed. No language in the specification should be construed as indicating any non-claimed element as essential to the practice of the disclosed materials and methods.

[0060] In this specification, references to "one implementation," "some implementations," "one or more implementations," or "an implementation" mean that a particular feature, structure, material, or characteristic is included in at least one implementation of the disclosure. Thus, the appearances of phrases such as "in one or more implementations," "in some implementations," "in one implementation," or "in an implementation" in various places in the specification are not necessarily referring to the same implementation of the disclosure. In one or more implementations, the particular features, structures, materials, or characteristics can be combined in any suitable manner.

[0061] While the disclosure herein has been described with reference to particular embodiments, it is to be understood that these embodiments are merely illustrative of the principles and applications of the present disclosure. It will thus be apparent to those skilled in the art that modifications and variations can be made in the method and apparatus of the present disclosure without departing from the spirit or scope of the disclosure. It is therefore intended that the present disclosure include modifications and variations as come within the scope of the appended claims and their equivalents.

Claims

1. A method for forming a nanocrystalline diamond film, the method comprising: The silicon substrate is exposed to a first plasma from a first plasma source, the first plasma source comprising C x H y One or more of carbon dioxide (CO2), hydrogen (H2), nitrogen (N2), and argon (Ar) are used to provide the processed substrate, wherein y ≥ x; The treated substrate is incubated with a gas stream and a second plasma to nucleate diamond particles and form a seed substrate, wherein the gas stream contains hydrocarbons; and The seed substrate was exposed to a third plasma with a power greater than 50 W to form a nanocrystalline diamond film. After the formation of the nanocrystalline diamond film, the nanocrystalline diamond film is directly placed on the oxide-rich amorphous layer, which is directly placed on the silicon substrate.

2. The method of claim 1, wherein the hydrocarbon has the general formula C m H n , where m is in the range of 1 to 120 and n is in the range of 2 to 242.

3. The method of claim 2, wherein the gas stream further comprises one or more of carbon dioxide (CO2), hydrogen (H2), nitrogen (N2), and argon (Ar).

4. The method of claim 3, wherein the gas stream comprises 5% to 90% of the hydrocarbon.

5. The method of claim 1, wherein during incubation, the treated substrate is maintained at a temperature below 600°C.

6. The method of claim 1, wherein during the formation of the nanocrystalline diamond film, the diamond particles are maintained at a temperature in the range of 100°C to 750°C.

7. The method of claim 1, wherein the substrate is exposed to the first plasma at a temperature ranging from 20°C to 600°C.

8. The method of claim 1, wherein the substrate is exposed to the first plasma at a distance greater than 1 cm.

9. The method of claim 1, wherein when the treated substrate is incubated with the airflow, the airflow is about 1 cm to 10 cm away from the top surface of the treated substrate.

10. The method of claim 1, wherein when the diamond particles are exposed to the second plasma, the third plasma is less than 10 cm away from the top surface of the substrate.

11. The method of claim 1, wherein the oxide-rich amorphous layer has a thickness of less than or equal to about 50 nm.

12. The method of claim 1, wherein the treated substrate comprises an oxide-rich amorphous layer directly on the silicon substrate.

13. The method of claim 12, wherein the oxide-rich amorphous layer comprises about 5 atomic% to about 70 atomic% oxygen.

14. The method of claim 1, wherein the seed substrate comprises an oxide-rich amorphous layer directly on the silicon substrate.

15. A method for forming a diamond film, the method comprising: A treated substrate is exposed to a gas flow to nucleate diamond particles on the top surface of the substrate, the substrate comprising an exposed oxide-rich amorphous layer, and the gas flow comprising hydrocarbons; and The diamond particles are exposed to a plasma with a power greater than 50 W to form a nanocrystalline diamond film on the top surface of the substrate, wherein the substrate is not silicon.

16. The method of claim 15, wherein the hydrocarbon has the general formula C m H n , where m is in the range of 1 to 120 and n is in the range of 2 to 242.

17. The method of claim 16, wherein the gas stream further comprises one or more of carbon dioxide (CO2), hydrogen (H2), nitrogen (N2), and argon (Ar).

18. The method of claim 17, wherein the gas stream comprises 5% to 90% of the hydrocarbon.

19. The method of claim 15, wherein the oxide-rich amorphous layer has a thickness of less than or equal to about 50 nm.

20. An electronic component, the electronic component comprising: Silicon substrate; An amorphous oxide layer, wherein the amorphous oxide layer is directly disposed on the silicon substrate; and A nanocrystalline diamond film, wherein the nanocrystalline diamond film is directly disposed on the amorphous oxide layer.

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