Cyclic PEALD / PECVD thin film encapsulation barrier layer

Abstract

Embodiments described herein relate to an optical device and a method of forming an optical device. The optical device includes a substrate, an irradiation source, a capping layer, an encapsulation layer, and a passivation layer. The encapsulation layer includes a first atomic layer deposition (ALD) layer, a chemical vapor deposition (CVD) layer, and a second ALD layer. The method includes: disposing a capping layer over an illumination layer, the illumination layer disposed over a substrate in a processing chamber; disposing a first atomic layer deposition (ALD) layer over the capping layer; disposing a chemical vapor deposition (CVD) layer over the first ALD layer; disposing a second ALD layer over the CVD layer; and disposing a passivation layer over the second ALD layer.

Description

TECHNICAL FIELD

[0001] Embodiments of the present disclosure generally relate to the field of semiconductor device manufacturing. In particular, the present disclosure relates to a packaging layer and a method of forming a packaging layer. BACKGROUND

[0002] Optical devices often have displays, such as liquid crystal displays (LCDs), organic light emitting diode (OLED) displays, and quantum dot (QD) displays. Such displays can be fragile and sensitive to moisture, pressure, or particle contamination. To prevent damage to underlying illumination sources, a packaging layer is disposed over the illumination sources to prevent damage. However, including a packaging layer with a high thickness can hinder optical devices with respect to device brightness and color clarity. Additionally, the packaging layer can require multiple chambers to manufacture, resulting in reduced throughput.

[0003] Thus, there is a need for improved packaging layers and methods of forming packaging layers with reduced thickness and increased throughput. SUMMARY

[0004] In one embodiment, an optical device is disclosed. The optical device includes a substrate, an illumination source, a capping layer, a packaging layer, and a passivation layer. The packaging layer includes a first atomic layer deposition (ALD) layer, a chemical vapor deposition (CVD) layer, and a second ALD layer.

[0005] In another embodiment, a method is disclosed. The method includes disposing a capping layer over an illumination layer. The illumination layer is disposed over a substrate in a processing chamber. A first atomic layer deposition (ALD) layer is disposed over the capping layer. A chemical vapor deposition (CVD) layer is disposed over the first ALD layer. A second ALD layer is disposed over the CVD layer. A passivation layer is disposed over the second ALD layer.

[0006] In yet another embodiment, an optical device is disclosed. The optical device includes a substrate, an illumination source, a capping layer, a first passivation layer, a polymer layer, and a packaging layer. The packaging layer includes a second passivation layer and an active matrix organic light emitting diode (AMOLED) layer. BRIEF DESCRIPTION OF DRAWINGS

[0007] So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description can be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only example embodiments and are therefore not to be considered limiting of its scope, as the scope can allow for other equally effective embodiments.

[0008] Figure 1 is a schematic diagram of a cluster processing system according to embodiments.

[0009] Figure 2 is a schematic cross-sectional view of a processing chamber according to an embodiment.

[0010] Figure 3 is a cross-sectional view of an optical device according to an embodiment.

[0011] Figure 4 is a flowchart of a method of forming an optical device according to an embodiment.

[0012] Figures 5A to 5E is a schematic cross-sectional view of a portion of an optical device during a method of forming an optical device according to an embodiment.

[0013] Figure 6 is a schematic cross-sectional view of a flexible optical device according to an embodiment.

[0014] To facilitate an understanding of this description, like reference characters are used to identify like elements throughout the description and the drawings. It is intended that elements and features of one embodiment can be beneficially incorporated into other embodiments without further recitation. DETAILED DESCRIPTION

[0015] Embodiments of the present disclosure generally relate to the field of semiconductor device manufacturing. In particular, the present disclosure relates to thin film encapsulation barriers and methods of forming thin film encapsulation barriers.

[0016] Figure 1 is a schematic view of a cluster processing system 100. The cluster processing system 100 includes a processing platform 103, a factory interface 102, and at least one processing chamber 122. The factory interface 102 can include an input interface 102A and an output interface 102B. The factory interface 102 can include at least one docking station. At least one factory interface robot in the processing platform 103 can be configured to facilitate transfer of substrates. The input interface 102A is configured to receive one or more substrates. The factory interface robot is configured to transfer the one or more substrates from the input interface 102A to the processing chamber 122 and to transfer the one or more substrates from the processing chamber 122 to the output interface 102B. The output interface 102B is configured to release the one or more substrates from the cluster processing system 100.

[0017] In one implementation of the cluster processing system 100, the cluster processing system 100 can include one or more processing chambers 122. The processing chambers 122 can be deposition chambers (e.g., physical vapor deposition (PVD) chambers, chemical vapor deposition (CVD) chambers, plasma-enhanced chemical vapor deposition (PECVD) chambers, atomic layer deposition (ALD) chambers, plasma-enhanced atomic layer deposition (PEALD) chambers, or other deposition chambers), anneal chambers (e.g., high pressure anneal chambers, rapid thermal processing (RTP) chambers, or laser anneal chambers), etch chambers, clean chambers, pre-clean chambers, cure chambers, lithography exposure chambers, or other similar types of semiconductor processing chambers. The processing chambers 122 can be configured to perform more than one semiconductor processing process, for example, the processing chambers 122 can perform both PEALD and PECVD.

[0018] Figure 2 is a schematic cross-sectional view of a processing chamber 122. The processing chamber 122 is configured to ignite and sustain a plasma of a plasma gas via capacitive coupling. The processing chamber 122 includes a chamber lid assembly 201, one or more sidewalls 202, and a chamber base 204. The chamber lid assembly 201 includes a chamber lid 206, a showerhead 207 disposed in the chamber lid 206, and an electrically insulating ring 208 disposed between the chamber lid 206 and the one or more sidewalls 202. The showerhead 207, the one or more sidewalls 202, and the chamber base 204 together define a processing volume 205. A gas inlet 209 disposed through the chamber lid 206 is fluidly coupled to a gas source 210. The gas source 210 can provide a plasma gas, a precursor gas, a carrier gas, or a purge gas. The showerhead 207 (with a plurality of openings 211 disposed through the showerhead 207) can be used to uniformly distribute gas from the gas source 210 into the processing volume 205. The showerhead 207 is electrically coupled to a first power source 212, such as an RF power source, which supplies power via capacitive coupling with the power source to ignite and sustain a plasma 213 of the processing gas. In this context, RF power has a frequency from about 400 kHz to about 40 MHz, for example, about 400 kHz to about 13.56 MHz. In other implementations, the processing chamber 122 includes an inductive plasma generator, and the plasma is formed via inductive coupling of RF power to the plasma gas.

[0019] Processing volume 205 is fluidly coupled to a vacuum source, such as one or more dedicated vacuum pumps, via vacuum outlet 214. This vacuum source maintains processing volume 205 under sub-atmospheric conditions and extracts process gases and other gases from processing volume 205. A substrate support 215 disposed within processing volume 205 is mounted on a movable support shaft 216 that extends hermetically through chamber base 204, such as by a bellows (not shown) surrounding it in a region beneath chamber base 204. Hereinafter, processing chamber 122 is configured to facilitate the transfer of substrate 217 through and from an opening 218 in one of the sidewalls 202 to substrate support 215, the opening of which may be sealed with a door or valve (not shown) during substrate processing.

[0020] The substrate 217 disposed on the substrate support 215 is maintained at a desired processing temperature using a heater (such as resistance heating element 219) and one or more cooling channels 220 disposed in the substrate support 215. One or more cooling channels 220 are fluidly coupled to a coolant source (not shown), such as a modified water source or refrigerant source with relatively high resistance. In at least one embodiment, the substrate support 215 or one or more electrodes of the substrate support 215 are electrically coupled to a second power supply 221, which supplies a bias voltage to the substrate support 215. The temperature of the substrate 217 and the substrate support 215 is maintained in the processing chamber 122 at less than about 100°C, such as about 60°C to about 90°C. The substrate 217 may be spaced from the nozzle 207 by about 650 mm to about 1200 mm.

[0021] Processing chamber 122 further includes a system controller 223 for controlling the operation of processing chamber 122 and implementing the methods described herein. System controller 223 includes a programmable central processing unit, here a central processing unit (CPU) 224, which operates in conjunction with memory 226 (e.g., non-volatile memory) and support circuitry 228. Support circuitry 228 is coupled to CPU 224 and includes caches, clock circuitry, input / output subsystems, power supplies, and combinations thereof coupled to the various components of processing chamber 122 to facilitate control of the various components of the processing chamber. CPU 224 is one of any type of general-purpose computer processor, such as a programmable logic controller (PLC), for controlling the various components and subprocessors of processing chamber 122. Memory 226 coupled to CPU 224 is one or more non-transitory and generally readily available memories, such as random access memory (RAM), read-only memory (ROM), floppy disk drive, hard disk, or any other form of digital storage (local or remote).

[0022] Typically, memory 226 is in the form of a computer-readable storage medium containing instructions (e.g., non-volatile memory) that, when executed by CPU 224, facilitate the operation of processing chamber 122. The instructions in memory 226 are in the form of a program product, such as a program implementing the methods of this disclosure. The program code may conform to any of several different programming languages. In one example, this disclosure may be implemented as a program product stored on a computer-readable storage medium for use with a computer system. The program product defines the functionality of the implementation (including the methods described herein).

[0023] Figure 3 This is a cross-sectional view of the optical device 300. The optical device 300 can be a liquid crystal display (LCD), an organic light-emitting diode (OLED) display, or a quantum dot (QD) display. The optical device 300 includes an illumination source 301, a cover layer 302, an encapsulation layer 303, and a passivation layer 304. The illumination source 301 can be disposed above the substrate 217. The illumination source 301 can be an OLED, a liquid crystal disposed above a backlight, or a quantum dot (QD). The QD can be configured as the illumination source 301, or can manipulate light from the illumination source 301 (where the QD is disposed above the illumination source 301) (such as an OLED or a backlight).

[0024] The capping layer 302 has a thickness of about 600 Å to about 1000 Å. The capping layer 302 may include organic materials such as tris(8-hydroxyquinoline)aluminum (ALq3), hole transport layer (HTL), electron injection layer (EIL), hole injection layer (HIL), or a combination of the above.

[0025] The encapsulation layer 303 includes a first atomic layer deposition (ALD) layer 305, a chemical vapor deposition (CVD) layer 306, and a second ALD layer 307. The encapsulation layer 303 has a thickness of less than about 1 μm. The first ALD layer 305 has a thickness of less than about 50 Å. The CVD layer 306 has a thickness of less than about 1 μm. The second ALD layer 307 has a thickness of less than about 10 Å. The thickness of the encapsulation layer 303, less than about 1 μm, reduces color crosstalk from the illumination source 301, thereby increasing the color clarity of the optical device 300.

[0026] In some embodiments, the first ALD layer 305 and the second ALD layer 307 have an elemental composition of about 38% to about 60% nitrogen (N), about 39% to about 50% silicon (Si), and about 5% to about 17% hydrogen (H). The N / Si ratio of the first ALD layer 305 and the second ALD layer 307 is about 0.6 to about 1.5. The first ALD layer 305 and the second ALD layer 307 have a refractive index of about 1.7 to about 2.1 at 633 nm. The CVD layer 306 has an elemental composition of about 42% to about 46% nitrogen (N), about 54% to about 58% silicon (Si), and about 27% to about 35% hydrogen (H). The N / Si ratio of the CVD layer 306 is about 0.7 to about 0.9. The CVD layer 306 has a refractive index of about 1.6 to about 2.1 at 633 nm.

[0027] The encapsulation layer 303 has a refractive index greater than about 1.8, such as about 1.85 to 2.1. The high refractive index reduces layer-to-layer reflections, thereby increasing the brightness of the optical device 300.

[0028] The thickness of the encapsulation layer 303, less than approximately 1 μm, further allows for more conformal deposition of the encapsulation layer 303, thereby reducing the percentage of non-uniformity (NU%) of the encapsulation layer 303. NU% is the thickness variation across the encapsulation layer 303. The NU% of the encapsulation layer 303 is approximately 3% to approximately 5%. The conformity and NU% of the encapsulation layer 303 reduce the number of seam lines in the encapsulation layer 303. The encapsulation layer 303 has a thickness of less than approximately 5 × 10⁻⁶. -5 g / m 2 / day water vapor transmission rate (WVTR). The reduction in the number of seams can increase the ability of the encapsulation layer 303 to protect the radiation source from contaminants such as water vapor.

[0029] The encapsulation layer 303 has a stress of approximately -1000 MPa to approximately 300 MPa. The stress difference (Δstress) from the center of substrate 217 to the edge of substrate 217 is less than approximately 50 MPa. The reduction in Δstress across substrate 217 may be due to increased uniformity, reduced NU%, and reduced seam lines.

[0030] Figure 4 This is a flowchart of the method for forming the optical device 300. Figures 5A to 5E This is a schematic cross-sectional view of a portion of the optical device 300 during the method 400 of forming the optical device 300.

[0031] At operation 401, the covering layer 302 is disposed above the irradiation source 301, such as... Figure 5AAs shown in the diagram. The capping layer 302 may include organic materials such as tris(8-hydroxyquinoline)aluminum (ALq3), a hole transport layer (HTL), an electron injection layer (EIL), a hole injection layer (HIL), or a combination of the above. The irradiation source may be disposed above the substrate 217.

[0032] At operation 402, a first atomic layer deposition (ALD) layer 305 is disposed above the capping layer 302, such as Figure 5B As shown in the diagram. The first ALD layer 305 is deposited using ALD deposition. In some embodiments, the first ALD layer 305 is deposited using plasma-enhanced ALD (PEALD). During the PEALD process, the substrate support 215 of the processing chamber 122 is at a temperature of about 60°C to about 90°C. During the PEALD process, the pressure within the processing chamber 122 is maintained at about 650 mTorr to about 1550 mTorr. The first power supply 212 provides about 500 W to about 1250 W of power during the PEALD process.

[0033] The PEALD process uses a plasma gas to initiate plasma within a processing chamber. The plasma gas may include N2, NH3, H2, He, Ar, or a combination of these. The flow rate of the plasma gas is between 0 sccm and about 10,000 sccm; for example, N2 may have a flow rate from about 0 sccm to about 10,000 sccm, NH3 may have a flow rate from about 0 sccm to about 1,000 sccm, and H2 may have a flow rate from about 0 sccm to about 6,000 sccm.

[0034] The PEALD process can use a purge gas to clean the processing chamber between deposition processes. The purge gas may include N2, Ar, H2, He, NH3, or a combination of these. The purge gas flow rate is between 5 sccm and approximately 120 sccm, lasting from approximately 5 seconds to approximately 10 seconds.

[0035] The PEALD process can use a precursor gas and a carrier gas to deposit the second ALD layer 307. The precursor gas may include trimethylsilylamine (TSA), SiH4, silicon, silicon nitride, or a combination thereof. The carrier gas may include Ar, H2, N2, He, or a combination thereof. During the PEALD process, the flow rate of the precursor gas is from about 100 sccm to about 600 sccm, and the duration is from about 5 seconds to about 10 seconds.

[0036] At operation 403, a chemical vapor deposition (CVD) layer 306 is disposed above the first ALD layer 305, such as Figure 5CAs shown in the diagram, CVD layer 306 is deposited using CVD. In some embodiments, CVD layer 306 is deposited using plasma-enhanced CVD (PECVD). During the PECVD process, the substrate support 215 of the processing chamber 122 is at a temperature of about 60°C to about 90°C. During the PECVD process, the pressure within the processing chamber 122 is maintained at a range from about 600 mTorr to about 1050 mTorr. The stress within the CVD layer 306 ranges from about -200 MPa to about 200 MPa.

[0037] The PECVD process can use precursor gases to deposit the CVD layer 306. Precursor gases may include trimethylsilylamine (TSA), SiH4, silicon, silicon nitride, or combinations thereof. The flow rate of the precursor gas during the PECVD process is from about 100 sccm to about 600 sccm. The deposition rate of the PECVD process is from about 2000 Å / min to about 3000 Å / min.

[0038] The PECVD process uses a plasma gas to initiate plasma in a processing chamber. The plasma gas may include N2, NH3, H2, Ar, He, or a combination of the above. The flow rate of the plasma gas is between 0 sccm and about 10,000 sccm; for example, N2 may have a flow rate from about 0 sccm to about 10,000 sccm, NH3 may have a flow rate from about 0 sccm to about 1,000 sccm, and H2 may have a flow rate from about 0 sccm to about 6,000 sccm.

[0039] At operation 404, the second ALD layer 307 is positioned above the CVD layer 306, as follows: Figure 5D As shown in the diagram. A first ALD layer 305, a CVD layer 306, and a second ALD layer 307 form an encapsulation layer 303. The second ALD layer 307 is deposited using ALD. In some embodiments, the second ALD layer 307 is deposited using PEALD. During the PEALD process, the substrate support 215 of the processing chamber 122 has a temperature of about 60°C to about 90°C. During the PEALD process, the pressure within the processing chamber 122 is maintained at about 650 mTorr to about 1550 mTorr. A first power supply 212 provides about 500 W to about 1250 W of power during the PEALD process.

[0040] The PEALD process uses a plasma gas to initiate plasma within a processing chamber. The plasma gas may include N2, NH3, H2, Ar, He, or a combination of these. The flow rate of the plasma gas is between 0 sccm and about 10,000 sccm; for example, N2 may have a flow rate from about 0 sccm to about 10,000 sccm, NH3 may have a flow rate from about 0 sccm to about 1,000 sccm, and H2 may have a flow rate from about 0 sccm to about 6,000 sccm.

[0041] The PEALD process can use a purge gas to clean the processing chamber between deposition processes. The purge gas may include N2, Ar, H2, He, or a combination of these. The purge gas flow rate is between 5 sccm and approximately 120 sccm, lasting from approximately 5 seconds to approximately 10 seconds.

[0042] The PECVD process can use a precursor gas and a carrier gas to deposit the second ALD layer 307. The precursor gas may include trimethylsilylamine (TSA), SiH4, silicon, and silicon nitride, or a combination of the above. The carrier gas may include Ar, H2, He, N2, or a combination of the above. During the PECVD process, the flow rate of the precursor gas is from about 100 sccm to about 600 sccm, lasting from about 5 seconds to about 10 seconds.

[0043] Operations 402 to 404 can be performed within a single processing chamber 122. Performing PEALD and PECVD processes within a single processing chamber 122 increases the throughput of the optical device 300. In some embodiments, operations 402 to 404 can be repeated until the desired encapsulation layer 303 thickness is achieved.

[0044] At operation 405, passivation layer 304 is disposed above second ALD layer 307.

[0045] Figure 6 This is a schematic cross-sectional view of the flexible optical device 600. The flexible optical device 600 has a flexible encapsulation layer 603, an irradiation source 601, a cover layer 602, a first passivation layer 608, and a polymer layer 609.

[0046] The flexible encapsulation layer 603 includes a second passivation layer 604 and an active-matrix organic light-emitting diode (AMOLED) layer 610. The AMOLED is configured as an illumination source. The AMOLED layer 610 may be an on-cell touch AMOLED (e.g., a touchscreen panel). The second passivation layer 604 may include silicon nitride, SiON... x SiO xThe AMOLED layer 610 comprises, or a combination thereof, aluminum tris(8-hydroxyquinoline) (ALq3), a hole transport layer (HTL), an electron injection layer (EIL), a hole injection layer (HIL), or a combination thereof. The flexible encapsulation layer 603 has a thickness of less than about 1 μm. The passivation layer 604 has a thickness of about 4000 Å to about 6000 Å. The AMOLED layer 610 has a thickness of about 1500 Å to about 2500 Å.

[0047] Reducing the thickness of the flexible encapsulation layer 603 decreases color crosstalk in the illumination source 601, thereby increasing the color clarity of the optical device 600. The flexible encapsulation layer 603 has a refractive index greater than about 1.8, such as about 1.85 to 2.1. A high refractive index reduces layer-to-layer reflections, thereby increasing the brightness of the flexible optical device 600. The encapsulation layer 603 has an increased critical elongation (E). cr Requirements. E cr The increase in the defect size relative to the slope of the trend over time indicates a decrease in flexibility, while still maintaining the optical properties of the flexible optical device 600.

[0048] In summary, an optical device and a method for manufacturing the optical device are disclosed. The optical device includes an encapsulation layer having a first atomic layer deposition (ALD) layer, a chemical vapor deposition (CVD) layer, and a second ALD layer. The CVD layer is disposed between the first ALD layer and the second ALD layer. The encapsulation layer has a thickness of less than about 1 μm. The thickness and conformal properties of the encapsulation layer reduce the non-uniformity of the encapsulation layer by about 3% to about 5%. In addition, the number of seams in the encapsulation layer is reduced. The reduction of seams results in a decrease in water vapor transmission rate, thereby increasing the ability of the encapsulated source to protect the irradiation source from contaminants. The encapsulation layer further has a stress of about -1000 MPa to about 300 MPa. The stress difference (Δstress) from the center of the substrate to the edge of the substrate is less than about 50 MPa.

[0049] Although the foregoing relates to examples of this disclosure, other and further examples of this disclosure may be designed without departing from the essential scope of this disclosure, which is defined by the appended claims. Claims (as amended under Article 19 of the Treaty) 1. An optical device comprising: substrate; Irradiation source; Overlay; Encapsulation layer, including: The first atomic layer deposition (ALD) layer has a thickness of less than about 50 Å; Chemical vapor deposition (CVD) layers with a thickness of less than approximately 1 nm; and The second ALD layer has a thickness of less than approximately 10 Å; and Passivation layer. 2. The optical device of claim 1, wherein the encapsulation layer has a refractive index greater than about 1.85. 3. The optical device of claim 1, wherein the encapsulation layer has a refractive index of about 1.85 to about 2.1. 4. The optical device of claim 1, wherein the optical device has a size of less than about 5 × 10⁻⁶. -5 g / m 2 Water vapor transmission rate (WVTR) per day. 5. The optical device of claim 1, wherein the stress difference (Δstress) from the center of the substrate to the edge of the substrate is less than about 50 MPa. 6. The optical device of claim 1, wherein the encapsulation layer has a stress of about -1000 MPa to about 300 MPa. 7. The optical device of claim 1, wherein the CVD layer has an N / Si ratio of about 0.7 to about 0.9. 8. The optical device of claim 1, wherein the first ALD layer and the second ALD layer have an N / Si ratio of about 0.6 to about 1.5. 9. The optical device of claim 1, wherein the encapsulation layer has a thickness of less than about 1 μm. 10. A method of forming an optical device, comprising the following steps: A cover layer is disposed above the irradiation layer, which is disposed above the substrate in the processing chamber; A first atomic layer deposition (ALD) layer is disposed above the capping layer; A chemical vapor deposition (CVD) layer is disposed above the first ALD layer; A second ALD layer is disposed above the CVD layer, wherein the steps of disposing of the first ALD layer, the CVD layer, and the second ALD layer include flowing a precursor gas, and wherein the precursor gas used to dispose of the first ALD layer is the same as the precursor gas used to dispose of the CVD layer, and is also the same as the precursor gas used to dispose of the second ALD layer; and A passivation layer is disposed above the second ALD layer. 11. The method of claim 10, wherein the substrate support of the processing chamber has a temperature of about 60°C to about 90°C. 12. The method of claim 10, wherein the steps of depositing the first ALD layer over the cover layer and depositing the second ALD layer over the CVD layer are performed when the processing chamber has a pressure of about 650 mTorr to about 1550 mTorr. 13. The method of claim 10, wherein the step of depositing the CVD layer over the first ALD layer is performed when the processing chamber has a pressure of about 650 mTorr to about 1050 mTorr. 14. The method of claim 10, wherein the step of depositing the CVD layer over the first ALD layer is performed at a deposition rate of about 2000 Å / min to about 3000 Å / min. 15. The method of claim 10, wherein the precursor gas comprises trimethylsilylamine (TSA), SiH4, silicon, silicon nitride, or a combination of the foregoing. 16. An optical device comprising: substrate; Irradiation source; Overlay; First passivation layer; polymer layer; and Encapsulation layer, including: The second passivation layer has a thickness of approximately 4000 Å to approximately 6000 Å; and The active-matrix organic light-emitting diode (AMOLED) layer has a thickness of approximately 1500 Å to approximately 2500 Å. 17. The optical device of claim 16, wherein the encapsulation layer has a refractive index of about 1.85 to about 2.1. 18. The optical device of claim 16, wherein the encapsulation layer has a density of less than about 5 × 10⁻⁶. -5 g / m 2 Water vapor transmission rate (WVTR) per day. 19. The optical device of claim 16, wherein the stress difference (Δstress) from the center of the substrate to the edge of the substrate is less than about 50 MPa. 20. The optical device of claim 16, wherein the encapsulation layer has a stress of about -1000 MPa to about 300 MPa.

Claims

1. An optical device comprising: substrate; Irradiation source; Overlay; Encapsulation layer, including: First Atomic Layer Deposition (ALD) layer; Chemical vapor deposition (CVD) layers; and Second ALD layer; and Passivation layer.

2. The optical device of claim 1, wherein the encapsulation layer has a refractive index greater than about 1.

85.

3. The optical device of claim 1, wherein the encapsulation layer has a refractive index of about 1.85 to about 2.

1.

4. The optical device of claim 1, wherein the optical device has a size of less than about 5 × 10⁻⁶. -5 g / m 2 Water vapor transmission rate (WVTR) per day.

5. The optical device of claim 1, wherein the stress difference (Δstress) from the center of the substrate to the edge of the substrate is less than about 50 MPa.

6. The optical device of claim 1, wherein the encapsulation layer has a stress of about -1000 MPa to about 300 MPa.

7. The optical device of claim 1, wherein the first ALD layer has a thickness of less than about 50 Å.

8. The optical device of claim 1, wherein the CVD layer has a thickness of less than about 1 μm.

9. The optical device of claim 1, wherein the second ALD layer has a thickness of less than about 10 Å.

10. A method of forming an optical device, comprising the following steps: A cover layer is disposed above the irradiation layer, which is disposed above the substrate in the processing chamber; A first atomic layer deposition (ALD) layer is disposed above the capping layer; A chemical vapor deposition (CVD) layer is disposed above the first ALD layer; A second ALD layer is disposed above the CVD layer; and A passivation layer is disposed above the second ALD layer.

11. The method of claim 10, wherein the substrate support of the processing chamber has a temperature of about 60°C to about 90°C.

12. The method of claim 10, wherein the steps of depositing the first ALD layer over the cover layer and depositing the second ALD layer over the CVD layer are performed when the processing chamber has a pressure of about 650 mTorr to about 1550 mTorr.

13. The method of claim 10, wherein the step of depositing the CVD layer over the first ALD layer is performed when the processing chamber has a pressure of about 650 mTorr to about 1050 mTorr.

14. The method of claim 10, wherein the step of depositing the CVD layer over the first ALD layer is performed at a deposition rate of about 2000 Å / min to about 3000 Å / min.

15. The method of claim 10, wherein the step of setting up the first ALD layer, the CVD layer, and the second ALD layer includes the following steps: A precursor gas is circulated, the precursor gas comprising trimethylsilylamine (TSA), SiH4, silicon, silicon nitride, or a combination of the foregoing.

16. An optical device comprising: substrate; Irradiation source; Overlay; First passivation layer; polymer layer; and Encapsulation layer, including: Second passivation layer; and Active-matrix organic light-emitting diode (AMOLED) layer.

17. The optical device of claim 16, wherein the encapsulation layer has a refractive index of about 1.85 to about 2.

1.

18. The optical device of claim 16, wherein the encapsulation layer has a density of less than about 5 × 10⁻⁶. -5 g / m 2 Water vapor transmission rate (WVTR) per day.

19. The optical device of claim 16, wherein the stress difference (Δstress) from the center of the substrate to the edge of the substrate is less than about 50 MPa.

20. The optical device of claim 16, wherein the encapsulation layer has a stress of about -1000 MPa to about 300 MPa.

Images