D-A type carbazole bridging tension grid material, floating gate type organic field effect transistor memory and preparation method of floating gate type organic field effect transistor memory

Abstract

The invention discloses a D-A type carbazole bridging tension grid material, a floating gate type organic field effect transistor memory and a preparation method of the floating gate type organic field effect transistor memory. The memory comprises a substrate, a gate electrode, a gate electrode insulating layer, a charge trapping layer, a semiconductor layer and source and drain electrodes which are sequentially arranged from bottom to top, according to the charge trapping layer, a 3-10 g / mL solution is prepared from a D-A type carbazole bridging tension grid material, and a single-component film is obtained in the air in a spin-coating mode. The invention provides a bipolar memory with high stability and tolerance. Bipolar storage (90V) is realized, and high mobility (0.43 cm < 2 > V <-1 > S <-1 >) is realized; the material has high storage stability and tolerance, after 104s test, no obvious charge leakage condition exists, and Ion / Ioff is greater than 102.

Description

Technical Field

[0001] This invention relates to the field of organic field-effect transistor memory technology, specifically to a DA-type carbazole bridged tension lattice material, a floating-gate organic field-effect transistor memory, and a method for fabricating the same. Background Technology

[0002] Non-volatile memory is a fundamental unit used for information storage, processing, and communication in many types of electronic devices. Among them, organic field-effect transistor non-volatile memory has attracted increasing research attention due to its solution processability, diverse synthesis methods, and customizable functions, which can meet the needs of future printable and intelligent electronic devices.

[0003] The charge trapping layer (i.e., floating gate) between the gate contact and the organic semiconductor channel significantly affects the electrical performance of organic field-effect transistor memories, such as the storage window, switching speed, and hold time. During programming and erasing, charge storage materials, such as nanoparticles, carbon materials, polymers, and small molecules, are dispersed or isolated within a dielectric matrix to trap and release charge carriers, respectively. An external electric field is applied through the gate electrode, injecting and trapping gate-induced charge carriers in the potential well of the charge trapping layer. This modulation of the conductivity channel produces non-volatile storage. Compared to other floating gate materials, nanoscale small molecules as molecular floating gates are ideal charge storage elements. Molecular floating gate memories offer advantages such as solution fabrication capabilities and uniform molecular-level charge storage elements, promising very high charge trapping site densities to meet the demands of high-speed, high-density charge storage and low-cost manufacturing. However, most molecular floating gate-based memories exhibit only unipolar storage behavior, limiting further increases in storage density. Furthermore, the stability of organic field-effect transistor non-volatile memories based on its single-component small-molecule thin films, as currently reported, is very poor, and the devices have undergone 10... 4 After the s test, I on / I off It's hard to reach 10 2 It has no practical application value. Summary of the Invention

[0004] The purpose of this invention is to address the shortcomings of existing technologies by providing a DA-type carbazole-bridged tension lattice material, a floating-gate organic field-effect transistor memory, and a method for fabricating the same.

[0005] The technical solution of this invention to solve the above problems is: a general formula for a DA-type carbazole-bridged tension lattice material structure is:

[0006]

[0007] R1 is hydrogen or a straight-chain, branched, or cyclic alkyl chain or alkoxy chain having 1 to 15 carbon atoms; R2 is one of the following groups.

[0008]

[0009] A floating-gate organic field-effect transistor memory based on DA-type carbazole-bridged strain lattice material includes, from bottom to top, a substrate, a gate electrode, a gate electrode insulating layer, a charge trapping layer, a semiconductor layer, and source / drain electrodes, wherein the charge trapping layer is prepared from the aforementioned DA-type carbazole-bridged strain lattice material.

[0010] Furthermore, the source and drain electrodes are made of a metal or an organic semiconductor material, with a thickness of 50-100 nm.

[0011] Furthermore, the semiconductor layer is made of a p-type organic semiconductor material or an n-type semiconductor material; the p-type organic semiconductor material is one of pentanebenzene, tetrabenzene, rubrogene, 3-hexylthiophene, titanium bronze, and titanium bronze fluoride; the n-type semiconductor material is C 60 The semiconductor layer thickness is 35-50nm.

[0012] Furthermore, the charge trapping layer is prepared by using a DA-type carbazole-bridged tensile lattice material in a 3-10 g / mL solution, and a single-component film is obtained by spin coating in air, with a charge trapping layer thickness of 5-30 nm.

[0013] Furthermore, the material of the gate electrode insulating layer is one of silicon dioxide, aluminum oxide, zirconium oxide, polystyrene, or polyvinylpyrrolidone, and its thickness is 50-300 nm.

[0014] Furthermore, the gate electrode is made of one of the following materials: heavily doped silicon, aluminum, copper, silver, gold, titanium, or tantalum.

[0015] Furthermore, the substrate material is one of heavily doped silicon wafers, glass, or PET plastic.

[0016] The fabrication method of the above-mentioned floating-gate organic field-effect transistor memory includes the following steps:

[0017] Step 1: Dissolve the small molecules of DA-type carbazole-bridged strain gauge material in toluene by heating or ultrasound; after 24 hours, a single-component solution is obtained.

[0018] Step 2: A gate insulating layer is prepared on the substrate and the gate electrode by thermal growth. The substrate, the gate electrode and the gate insulating layer constitute the substrate. The substrate is cleaned and then dried.

[0019] Step 3: Irradiate the clean substrate from Step 2 with ultraviolet light, then place it on the platform of a spin coater, adjust the speed to 2500-3000 rpm, drop the single-component solution obtained in Step 1 onto it, and spin coat in the air for 25-30 seconds; place the spin-coated sample in a vacuum drying oven for annealing to obtain the charge trapping layer.

[0020] Step 4: Vacuum evaporation of semiconductor layers and source / drain electrodes onto the dried charge trapping layer to obtain a floating-gate organic field-effect transistor memory.

[0021] Furthermore, the evaporation rate during vacuum evaporation of the semiconductor layer in step 4 is... Vacuum degree is 5*10 -4 -4*10 -5 During source / drain electrode deposition, an electrode mask with a channel length L = 100-150 micrometers and a width W = 1500 micrometers is used, and the deposition rate is within [specified range]. Vacuum degree is 5*10 -4 -4*10 -5 .

[0022] The present invention has the following beneficial effects:

[0023] This invention provides a DA-type carbazole-bridged strain lattice material, a floating-gate organic field-effect transistor (OFET) memory, and a method for fabricating the same. The DA-type carbazole-bridged strain lattice, used as a floating gate layer in an OFET memory, provides a bipolar memory with high stability and robustness. It not only achieves bipolar storage (90V) but also exhibits high mobility (0.43cm). 2 V -1 S -1 It exhibits high storage stability and tolerance, at 10 4 After the s test, no obvious charge leakage was found. on / I off Greater than 10 2 . Attached Figure Description

[0024] Figure 1 The diagram shows the structure of the memory prepared in Embodiments 1 and 2 of this invention.

[0025] Figure 2 AFM photograph of the CZGD-pTRZ single-component film of Example 1 of the present invention;

[0026] Figure 3 The transfer characteristic curve for memory testing prepared in Example 1 of this invention;

[0027] Figure 4 The negative memory window characteristic curve for memory testing prepared in Embodiment 1 of the present invention;

[0028] Figure 5 The forward memory window characteristic curve for memory testing prepared in Embodiment 1 of the present invention;

[0029] Figure 6 The sustain time characteristic curve of the memory prepared in Embodiment 1 of the present invention, tested in storage hole mode;

[0030] Figure 7 The sustain time characteristic curve of the memory prepared in Embodiment 1 of the present invention, tested in storage electronic mode;

[0031] Figure 8 The read-write-erase cycle characteristic curve of the memory prepared in Embodiment 1 of the present invention, tested in storage hole mode;

[0032] Figure 9 The read-write-erase cycle characteristic curve of the memory prepared in Embodiment 1 of the present invention, tested in storage electronic mode;

[0033] Figure 10 AFM image of the CZGD-mTRZ single-component film of Example 2 of the present invention;

[0034] Figure 11 The transfer characteristic curve for memory testing prepared in Example 2 of this invention;

[0035] Figure 12 The negative memory window characteristic curve for memory testing prepared in Embodiment 2 of the present invention;

[0036] Figure 13 The forward memory window characteristic curve for memory testing prepared in Embodiment 2 of the present invention;

[0037] Figure 14 The sustain time characteristic curve of the memory prepared in Embodiment 2 of the present invention, tested in storage hole mode;

[0038] Figure 15 The sustain time characteristic curve of the memory prepared in Embodiment 2 of the present invention, tested in storage electronic mode;

[0039] Figure 16 The read-write-erase cycle characteristic curve of the memory prepared in Embodiment 2 of the present invention, tested in the storage hole mode;

[0040] Figure 17 The read-write-erase cycle characteristic curve of the memory prepared in Embodiment 2 of the present invention was tested in the storage electronic mode;

[0041] Figure 18 This is a general structural diagram of the organic field-effect transistor memory based on a DA-type carbazole-bridged strainor single-component thin film according to the present invention. Detailed Implementation

[0042] The present invention will now be described in detail with reference to the accompanying drawings and embodiments.

[0043] As shown in the figure, a DA-type carbazole-bridged tension lattice material has the following general structural formula:

[0044]

[0045] R1 is hydrogen or a straight-chain, branched, or cyclic alkyl chain or alkoxy chain having 1 to 15 carbon atoms; R2 is one of the following groups.

[0046]

[0047] The specific synthesis route is as follows:

[0048] Step 1:

[0049]

[0050] Carbazole (1 eq), compound 1 (3 eq), and 77 mL of dry DCM were added to a reaction flask and stirred at room temperature. Then, boron trifluoride diethyl ether (BF3·OEt2, 5 eq) was added. After the reaction was complete, a saturated sodium bicarbonate aqueous solution was added to quench the reaction. The organic layer was separated and extracted with dichloromethane, purified by silica gel column chromatography using PE:DCM = 6:1 as the eluent, and purified to obtain product 2.

[0051] Step Two:

[0052]

[0053] Product 2 (1 eq), pinacol diborate (2.5 eq), and KOAc (4 eq) were weighed into a reaction flask, protected from light, and purged with nitrogen three times under vacuum. Then, catalyst Pd(dppf)Cl2 (0.1 eq) was added to the reaction flask, sealed, and purged with nitrogen three times under vacuum. Finally, 18.8 mL of deoxygenated 1,4-Dioxane was added, and the mixture was stirred at 105 °C. After the reaction was complete, the mixture was quenched with water, and the organic layer was separated and extracted with dichloromethane. The purified product was then obtained as product 3.

[0054] Step 3:

[0055]

[0056] Compound 4 (1 eq), product 3 (1 eq), CsCO3 (8 eq), and Pd(PPh3)4 (0.2 eq) were weighed into a reaction tube, and then 5 mL of toluene was added to the reaction tube using a syringe. The reaction was protected from light, and after evacuating the tube three times with nitrogen, the apparatus was transferred to an oil bath. Stirring was started at 125 °C. After the reaction was complete, the mixture was quenched with water, and the organic layer was separated and extracted with dichloromethane. The organic layer was purified by alumina column chromatography using PE:DCM = 4.5:1 as the eluent to obtain product 5.

[0057] Step Four:

[0058]

[0059] (1) Product 5 (261 eq) was added to a reaction flask, and after evacuating the flask three times with nitrogen, 35 mL of ultra-dry THF was added, and stirring was started. At room temperature, 2.8 mL of a tetrabutylammonium fluoride solution (TBAF, 1 mol / L, 2.8 mmol) dissolved in THF was added. The reaction was allowed to proceed for two hours at room temperature. After the reaction was completed, the mixture was quenched with water, and the reaction solution was concentrated using a rotary evaporator. The organic layer was then separated and extracted with dichloromethane. The product was evaporated to dryness and the crude product was collected.

[0060] (2) First, SnCl2·2H2O (10 mmol) was added to reaction flask No. 1, and the mixture was evacuated and purged with nitrogen three times. A nitrogen balloon was then inserted, and 100 mL of ultra-dry THF was added under nitrogen atmosphere. Stirring was started at room temperature. 1.8 mL of concentrated hydrochloric acid (22 mmol, 2.2 eq) was added to the reaction flask, and the mixture was reacted at room temperature for 30 minutes to obtain H2SnCl4 solution. Then, the above crude product (1 eq) was added to reaction flask No. 2, and after evacuating and purging with nitrogen three times, 40 mL of ultra-dry THF was added. Stirring was started at room temperature. Then, the H2SnCl4 solution (10 mL) prepared in reaction flask No. 1 was added to reaction flask No. 2, and the mixture was reacted overnight at room temperature. After the reaction was completed, the mixture was quenched with water, and the organic layer was separated and extracted with dichloromethane. The organic phase was purified by silica gel column chromatography using PE:DCM = 6:1 as the eluent. After purification, product 6 was obtained.

[0061] Step 5:

[0062]

[0063] Product 6 (1 eq) and R2-X (1.5 eq) were weighed into reaction flasks, and 0.34 mL of DMF was added to the flasks using a syringe. Stirring was started at room temperature, and after the substrate dissolved, NaH (2 eq) was slowly added to the flasks. Stirring was started at 140 °C, and the mixture was refluxed for 72 h. After the reaction was complete, the mixture was quenched with water, and the organic layer was separated and extracted with dichloromethane. The organic phase was purified by silica gel column chromatography using PE:DCM = 6:1 as the eluent. The purified product was the final product, DA-type carbazole-bridged strain gauge material 7.

[0064] Example 1

[0065] Step 1, preparing DA-type carbazole-bridged strain gauge materials, specifically includes the following steps:

[0066] Step 101: Carbazole (2 g, 7.7 mmol, 1 eq), BrOC8FOH (10.78 g, 23 mmol, 3 eq), and 77 mL of dry DCM were added to a reaction flask. Stirring was started at room temperature, followed by the addition of boron trifluoride diethyl ether (BF3·OEt2, 5.47 g, 38.6 mmol, 5 eq). After the reaction, the organic layer was separated and extracted with dichloromethane. The organic phase was purified by silica gel column chromatography using PE:DCM = 6:1 as the eluent. The purified product was DBrOC8H (pale yellow solid, 5 g; yield 60.97%). The synthetic route is as follows:

[0067]

[0068] Step 102: Weigh DBrOC8H (2g, 1.8mmol, 1eq), pinacol diboronate (OMDOB, 1.19g, 4.7mmol, 2.5eq), and KOAc (0.7g, 7.5mmol, 4eq) into a reaction flask. Protect from light, evacuate under nitrogen three times, then quickly add the weighed catalyst Pd(dppf)Cl2 (137mg, 0.18mmol, 0.1eq). Seal the flask, add 18.8mL of 1,4-Dio (after nitrogen evacuation), insert a nitrogen balloon, and stir at 105℃ for 12 hours. After the reaction, quench with water, separate and extract the organic layer with dichloromethane, recrystallize to obtain the product DBinOC8H (pale gray solid, 1.98g, yield 91.24%). The synthetic route is as follows:

[0069]

[0070] Step 103: Weigh V-TESO (100 mg, 0.13 mmol, 1 eq), DBinOC8H (155 mg, 0.13 mmol, 1 eq), CsCO3 (349 mg, 1.04 mmol, 8 eq), and Pd(PPh3)4 (31 mg, 0.026 mmol, 0.2 eq) into a reaction tube, and then add toluene (5 mL) to the reaction tube using a syringe. Protect from light, evacuate under nitrogen three times, then transfer the apparatus to an oil bath and stir at 125°C for 72 hours. After the reaction, quench with water, separate the organic layer with dichloromethane, and purify by alumina column chromatography using PE:DCM = 4.5:1 as the eluent. Recrystallize and purify to obtain the product CZGD-TESO (white solid, 18 mg, yield 9.6%). The synthetic route is as follows:

[0071]

[0072] Step 104: Add the raw material CZGD-TESO (400 mg, 0.28 mmol, 261 eq) to the reaction flask, evacuate under nitrogen three times, then add 35 mL of ultra-dry THF and start stirring. At room temperature, add 2.8 mL of a tetrabutylammonium fluoride solution (1 mol / L, 2.8 mmol) dissolved in THF. React at room temperature for two hours. After the reaction is complete, quench with water, concentrate the reaction solution using a rotary evaporator, and separate the organic layer with dichloromethane. Dry by rotary evaporation and collect the crude product CZGD-OH.

[0073] First, SnCl₂·2H₂O (2.2 g, 10 mmol) was added to reaction flask No. 1. The flask was evacuated and purged with nitrogen three times. A nitrogen balloon was inserted, and then 100 mL of ultra-dry THF was added under nitrogen atmosphere. Stirring was started at room temperature. 1.8 mL of concentrated hydrochloric acid (22 mmol, 2.2 eq) was added, and the reaction was allowed to proceed for 30 minutes at room temperature to obtain an H₂SnCl₄ solution. Next, crude product CZGD-OH (135 mg, 0.11 mmol, 1 eq) was added to reaction flask No. 2. After evacuating and purged with nitrogen three times, 40 mL of ultra-dry THF was added under nitrogen atmosphere, and stirring was started at room temperature. Then, 10 mL of the prepared H₂SnCl₄ solution from reaction flask No. 1 was added to reaction flask No. 2, and the reaction was allowed to proceed overnight at room temperature. The reaction was then quenched with water, and the organic layer was separated and extracted using dichloromethane. The organic phase was purified by silica gel column chromatography using PE:DCM = 6:1 as the eluent. The purified product was CZGD (pale green solid, 50 mg, yield 38%). The synthetic route is as follows:

[0074]

[0075] Step 105: Weigh CZGD (30 mg, 0.02 mmol, 1 eq) and 2-(4-fluorophenyl)-4,6-diphenyl-1,3,5-triazine (13 mg, 0.004 mmol, 1.5 eq) into a reaction flask. Add 0.34 mL of DMF to the reaction flask using a syringe. Stir at room temperature until the substrate dissolves. Slowly add NaH (1.2 mg, 0.05 mmol, 2 eq) to the reaction flask. Stir at 140 °C and reflux for 72 h. After the reaction is complete, quench with water. Separate and extract the organic layer with dichloromethane. Purify the organic phase by silica gel column chromatography using PE:DCM = 6:1 as the eluent. The purified product CZGD-pTRZ is a white solid (25 mg; yield 65%). The synthetic route is as follows:

[0076]

[0077] The material is prepared as a single-component solution, with toluene as the solvent, and has not undergone any treatment. Furthermore, the preparation process is carried out at room temperature.

[0078] The memory is fabricated using the above-mentioned DA-type carbazole-bridged strain gauge material CZGD-pTRZ, including the following steps:

[0079] Step A: Dissolve the DA-type carbazole-bridged strain gauge material CZGD-pTRZ in toluene solution, with a solution concentration of 5 mg / mL.

[0080] Step B: A 300nm thick SiO2 layer, thermally grown on a heavily doped silicon wafer, is used as the gate insulating layer. The heavily doped silicon wafer (including the substrate and gate electrode) and the gate insulating layer constitute the substrate. The silicon wafer (i.e., the substrate) is cut into 1.5*1.5cm sizes using a diamond pen to ensure consistency with the specifications of the electrode mask for fabricating the device. The cut substrate is then ultrasonically cleaned sequentially with acetone-ethanol-ultrapure water for 10 minutes, then purged with nitrogen, placed in a 120℃ oven for drying for 30 minutes, and finally treated with ultraviolet ozone for 10 minutes using a 100W ultraviolet ozone treatment instrument.

[0081] Step C: Place the substrate processed in Step B on the spin coater platform, adjust the rotation speed to 3000 rpm, drop 140 μL of the mixed solution from Step A onto the substrate, and spin coat for 30 seconds. A uniform film with a thickness of approximately 5 nm is obtained. Place the film in a vacuum drying oven at 80 °C for annealing for 30 minutes to obtain the charge trapping layer of the device.

[0082] Step D: Place the device obtained in step C into the vacuum deposition chamber and deposit the semiconductor layer. Close the chamber door and evaporate the vacuum to 5*10. -4Below Pa, then turn on the heater, and control the evaporation rate to stabilize by adjusting the heating temperature. Around 10:00 AM, begin evaporating the semiconductor layer, with a thickness of approximately 50 nm. After the organic semiconductor layer is deposited, turn off the baffle and the heating source, and allow it to cool under vacuum for 30 minutes to prevent oxidation of the organic semiconductor. Then, remove the sample.

[0083] Step E: Evaporation of source and drain electrodes. Select a mask with a channel length L = 100 micrometers and a width W = 1500 micrometers. Place the device from step D on the mask and put it into the evaporation chamber. When the vacuum degree of the evaporation chamber reaches 5 × 10⁻⁶... -4 When the pressure is below Pa, the metal source is slowly heated, and the evaporation rate is stabilized by adjusting the heating current. Around 10:00 AM, the electrode deposition process begins, with a thickness of approximately 70 nm. After the electrode deposition is complete, the entire deposition system is cooled for one hour. The device is then removed, and the memory fabrication is complete.

[0084] The light source used in the experiment was a light-emitting diode with a light intensity of 5 mW / cm². -2 The electrical performance of the device was tested using a Keithley 4200SCS semiconductor parameter analyzer. All electrical performance tests were performed in an air environment. The transfer curves plotted from the data processing are shown below. Figure 3 As shown, the mobility reached 0.27 cm. 2 V -1 S -1 The switching ratio reaches 10. 5 .

[0085] Figure 1 The image shows the memory structure provided in this embodiment. The memory includes a substrate, a gate electrode, a gate electrode insulating layer, a charge trapping layer, a semiconductor layer, and source / drain electrodes arranged sequentially from bottom to top.

[0086] The source and drain electrodes are made of a metal or an organic semiconductor material, with a thickness of 50-100 nm.

[0087] The semiconductor layer is made of a p-type organic semiconductor material or an n-type semiconductor material; the p-type organic semiconductor material is one of pentanediol, tetraphenylene, rubiginene, 3-hexylthiophene, titanium bronze, and titanium bronze fluoride; the n-type semiconductor material is C 60 The semiconductor layer thickness is 35-50nm.

[0088] The charge trapping layer is prepared by using the above-mentioned DA-type carbazole-bridged tensile lattice material in a 3-10 g / mL solution, and a single-component film is obtained by spin coating in air;

[0089] The insulating layer of the gate electrode is made of one of silicon dioxide, aluminum oxide, zirconium oxide, polystyrene, or polyvinylpyrrolidone, and its thickness is 50-300 nm.

[0090] The gate electrode is made of one of the following materials: heavily doped silicon, aluminum, copper, silver, gold, titanium, or tantalum.

[0091] The substrate material is one of heavily doped silicon wafers, glass, or PET plastic.

[0092] Figure 2 This is an AFM image of a CZGD-pTRZ monocomponent film. As can be seen from the image, the spin-coated monocomponent film is smooth, which is beneficial for improving carrier mobility and charge trapping density.

[0093] Figure 3 This is the transfer characteristic curve of the organic field-effect transistor memory tested in Embodiment 1 of the present invention.

[0094] Figure 4 This is the negative memory window characteristic curve of the device test. As can be seen from the figure, with the increase of the write gate voltage, the device's transfer curve continuously shifts to the negative direction, at 5mW / cm². -2 The transfer curves under illumination (or illumination plus forward erase voltage) revert to the initial state, indicating that the trapped hole carriers were recombine with photogenerated electrons. The results show that, at a gate voltage of -120V, both exhibit a storage window close to 60V, demonstrating good hole storage performance.

[0095] Figure 5 This is the characteristic curve of the positive memory window for device testing. As can be seen from the figure, with a write voltage of 120V and a write time of 1s, the positive memory window can reach 30V. Applying a negative voltage for 1s causes it to return to its original position.

[0096] Figure 6 and Figure 7 These are the sustain time characteristic curves of the device in hole and electron modes, respectively. As can be seen from the figure, 10 4 Within 10 seconds, the device exhibits stable programming and erasing states. The CZGD-pTRZ device demonstrates good stability in both its OFF and ON states, even at 10 seconds. 4 After s, the ON-state current and OFF-state current show almost no degradation, I on / I off Reaching approximately 10 3 .

[0097] Figure 8 and Figure 9These are the read / write / erase cycle characteristic curves of the device tested in both hole and electron modes. The graph shows that after 100 read / write / erase cycles, the device exhibits stable programming and erasing states. on / I off Reaching approximately 10 3 .

[0098] Example 2

[0099] The structural formula of the DA-type carbazole-bridged tension lattice material CZGD-mTRZ used in this embodiment is:

[0100]

[0101] The only difference between this preparation and the one in Example 1 that prepares CZGD-pTRZ is the reactants; all other reaction conditions are the same.

[0102] The memory was fabricated using the above-mentioned DA-type carbazole-bridged strain gauge material CZGD-mTRZ, and the fabrication method was the same as in Example 1.

[0103] Figure 10 The image shows an AFM photograph of a CZGD-mTRZ single-component thin film. As can be seen from the image, the spin-coated film is smooth, which is beneficial for improving carrier mobility and charge trapping density.

[0104] Figure 11 This is the transfer characteristic curve of the organic field-effect transistor memory tested in Embodiment 1 of the present invention.

[0105] Figure 12 This is the negative memory window characteristic curve for device testing. As can be seen from the figure, with a write voltage of -120V and a duration of 1 second, the negative memory window can reach 62V. Applying a positive voltage for 1 second causes it to return to its original position.

[0106] Figure 13 This is the characteristic curve of the positive memory window for device testing. As can be seen from the figure, with a write voltage of 120V and light applied for 1 second, the positive memory window can reach 30V. Applying a negative voltage for 1 second, it returns to its original position.

[0107] Figure 14 and Figure 15 These are the sustain time characteristic curves of the device in hole and electron modes, respectively. As can be seen from the figure, 10 4 Within 10 seconds, the device exhibits stable programming and erasing states. The CZGD-mTRZ device demonstrates good stability in both its OFF and ON states, even at 10 seconds. 4 After s, the ON-state current and OFF-state current show almost no degradation, I on / Ioff Reaching approximately 10 2 .

[0108] Figure 16 and Figure 17 These are the read / write / erase cycle characteristic curves of the device tested in both hole and electron modes. The graph shows that after 100 read / write / erase cycles, the device exhibits stable programming and erasing states. on / I off Reaching approximately 10 2 .

[0109] The above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention in any other way. Any person skilled in the art may make changes or modifications to the above-disclosed technical content to create equivalent embodiments for application in other fields. However, any simple modifications, equivalent changes, and modifications made to the above embodiments based on the technical essence of the present invention without departing from the scope of the present invention shall still fall within the protection scope of the present invention.

Claims

1. A DA-type carbazole-bridged tension ligand material, characterized in that: The general structural formula is: R1 is hydrogen or a straight-chain, branched, or cyclic alkyl chain or alkoxy chain having 1 to 15 carbon atoms; R2 is one of the following groups.

2. A floating-gate organic field-effect transistor memory based on DA-type carbazole bridged tension lattice material, comprising, from bottom to top, a substrate, a gate electrode, a gate electrode insulating layer, a charge trapping layer, a semiconductor layer, and source / drain electrodes, characterized in that: The charge trapping layer is prepared from the DA-type carbazole-bridged strain gauge material as described in claim 1.

3. A floating-gate organic field-effect transistor memory based on DA-type carbazole bridged tension lattice material as described in claim 2, characterized in that: The source and drain electrodes are made of a metal or an organic semiconductor material, with a thickness of 50-100 nm.

4. A floating-gate organic field-effect transistor memory based on DA-type carbazole bridged tension lattice material as described in claim 2, characterized in that: The semiconductor layer is made of a p-type organic semiconductor material or an n-type semiconductor material; the p-type organic semiconductor material is one of pentanediol, tetraphenylene, rubiginene, 3-hexylthiophene, titanium bronze, and titanium bronze fluoride; the n-type semiconductor material is C 60 The semiconductor layer thickness is 35-50nm.

5. A floating-gate organic field-effect transistor memory based on DA-type carbazole bridged tension lattice material as described in claim 2, characterized in that: The charge trapping layer is prepared by using a DA-type carbazole-bridged tensile lattice material in a 3-10 g / mL solution, and a single-component film is obtained by spin coating in air, with a charge trapping layer thickness of 5-30 nm.

6. A floating-gate organic field-effect transistor memory based on a DA-type carbazole bridged tension lattice material as described in claim 2, characterized in that: The insulating layer of the gate electrode is made of one of silicon dioxide, aluminum oxide, zirconium oxide, polystyrene, or polyvinylpyrrolidone, and its thickness is 50-300 nm.

7. A floating-gate organic field-effect transistor memory based on DA-type carbazole bridged tension lattice material as described in claim 2, characterized in that: The gate electrode is made of one of the following materials: heavily doped silicon, aluminum, copper, silver, gold, titanium, or tantalum.

8. A floating-gate organic field-effect transistor memory based on DA-type carbazole bridged tension lattice material as described in claim 2, characterized in that: The substrate material is one of heavily doped silicon wafers, glass, or PET plastic.

9. The method for fabricating a floating-gate organic field-effect transistor memory as described in claim 2, characterized in that: Includes the following steps: Step 1: Dissolve the small molecules of DA-type carbazole-bridged strain gauge material in toluene by heating or ultrasound; after 24 hours, a single-component solution is obtained. Step 2: A gate insulating layer is prepared on the substrate and the gate electrode by thermal growth. The substrate, the gate electrode and the gate insulating layer constitute the substrate. The substrate is cleaned and then dried. Step 3: Irradiate the clean substrate from Step 2 with ultraviolet light, then place it on the platform of a spin coater, adjust the speed to 2500-3000 rpm, drop the single-component solution obtained in Step 1 onto it, and spin coat in the air for 25-30 seconds; place the spin-coated sample in a vacuum drying oven for annealing to obtain the charge trapping layer. Step 4: Vacuum evaporation of semiconductor layers and source / drain electrodes onto the dried charge trapping layer to obtain a floating-gate organic field-effect transistor memory.

10. The method for fabricating a floating-gate organic field-effect transistor memory as described in claim 9, characterized in that: The evaporation rate during vacuum evaporation of the semiconductor layer in step 4 is: Vacuum degree is 5*10 -4 -4*10 -5 During source / drain electrode deposition, an electrode mask with a channel length L = 100-150 micrometers and a width W = 1500 micrometers is used, and the deposition rate is within [specified range]. Vacuum degree is 5*10 -4 -4*10 -5 .

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