Bilayer film of magnetic body and insulator, tunneling magnetoresistive element, and magnetic memory

Abstract

A bilayer film of a magnetic body and an insulator has an antiferromagnetic layer having a hexagonal crystal structure and at least one surface of which is the (10-10) surface of an antiferromagnetic body, and an insulator layer containing two or three or four atoms laminated on the (10-10) surface of the antiferromagnetic layer. A bilayer film of a magnetic body and an insulator has an antiferromagnetic layer having a hexagonal crystal structure and at least one surface of which is the (0001) surface of an antiferromagnetic body, and an insulator layer containing two or three or four atoms laminated on the (0001) surface of the antiferromagnetic layer. The tunneling magnetoresistive element has a second antiferromagnetic film layer laminated on the insulator of the bilayer film. The magnetic memory includes a plurality of the tunneling magnetoresistive elements.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to a two layer film of magnetic body and insulator, a tunnel magnetoresistive element, and a magnetic memory.

[0002] This application claims priority based on U.S. Provisional Patent Application 63 / 472,069 filed in the United States on June 9, 2023, and the contents thereof are incorporated into the present application. BACKGROUND

[0003] A magnetoresistive element in which an insulator layer is sandwiched between a ferromagnetic layer whose magnetization direction can be changed and a ferromagnetic layer whose magnetization direction is fixed is known. In order to speed up such a magnetoresistive element, a study is being made of using an antiferromagnetic layer of Mn3Sn or the like instead of a ferromagnetic layer (for example, refer to H. Tsai, et al., “Electrical manipulation of a topological antiferromagnetic state”, Nature, volume 580, pages 608-613 (2020)).

[0004] In WO2022 / 220251, it is disclosed that by sandwiching Ta between a Mn3Sn and a contact layer of an insulator, the roughness of the interface is suppressed and smoothed, and thus the read signal of the magnetic memory element is enhanced.

[0005] In addition, X. Chen, et al., “Octupole-driven magnetoresistance in an antiferromagnetic tunnel junction”, Nature, 613, 490 (2023) shows the case where, by making a strong magnetic layer an antiferromagnetic layer of Mn3Sn or the like, and sandwiching an insulating layer of MgO or the like by two antiferromagnetic layers, there is a possibility of obtaining a tunnel magnetoresistive element.

[0006] PRIOR ART DOCUMENTS

[0007] PATENT LITERATURE

[0008] Patent Literature 1: International Patent Application Publication No. 2022 / 220251

[0009] Non-Patent Literature

[0010] Non-Patent Literature 1: H. Tsai, et al.,“Electrical manipulation of a topological antiferromagnetic state”, Nature, volume 580, pages 608-613 (2020)

[0011] Non-Patent Literature 2: X. Chen, et al.,“Octupole-driven magnetoresistance in an antiferromagnetic tunnel junction”, Nature 613, 490 (2023) SUMMARY

[0012] PROBLEMS TO BE SOLVED BY THE INVENTION

[0013] An object of the present application is to obtain a magnetic body and insulator double-layer film in which a relatively large tunnel magnetoresistance ratio can be obtained, and a tunnel magnetoresistance element. In addition, an object is to obtain a magnetic memory in which a relatively large read signal can be obtained.

[0014] TECHNICAL MEANS FOR SOLVING THE PROBLEMS

[0015] According to one aspect of the present disclosure, a magnetic body and insulator double-layer film has an antiferromagnetic layer having a crystal structure containing hexagonal crystals, and at least one (10-10) face of which is an antiferromagnetic body, and an insulator layer containing a compound containing two or three or four kinds of atoms stacked on the (10-10) face thereof.

[0016] According to another aspect of the present disclosure, a magnetic body and insulator double-layer film has an antiferromagnetic layer having a crystal structure containing hexagonal crystals, and at least one (0001) face of which is an antiferromagnetic body, and an insulator layer containing a compound containing two or three or four kinds of atoms stacked on the (0001) face thereof.

[0017] According to still another aspect of the present disclosure, a tunnel magnetoresistance element has a second antiferromagnetic film layer stacked on the insulator of the double-layer film.

[0018] According to yet another aspect of this disclosure, the magnetic memory includes a plurality of the tunneling magnetoresistive elements. Attached Figure Description

[0019] With regard to its association with the accompanying drawings, a more comprehensive understanding of this disclosure and its accompanying advantages can be readily obtained in a manner that leads to a progressively better understanding by referring to the following detailed description.

[0020] [ Figure 1 [Illustration 1] is a cross-sectional view showing one embodiment of a double-layer film containing a magnetic material and an insulator.

[0021] [ Figure 2 [Illustration 1] is a cross-sectional view showing one embodiment of a tunneling magnetoresistive element.

[0022] [ Figure 3 [ ] is a cross-sectional view illustrating the operation of the tunneling magnetoresistive element.

[0023] [ Figure 4 [Illustration] is a circuit diagram of one embodiment of a magnetic storage device. Detailed Implementation

[0024] In this specification, where quantities, concentrations, or other values ​​or parameters are provided in the form of ranges and / or where the description includes a list of upper and lower limits, it can be understood that all ranges formed by all integers and fractions within the provided ranges, and any combination of any upper and lower limits, are specifically disclosed, regardless of whether a narrower range is disclosed separately. Where numerical ranges are described in this specification, unless otherwise specified, the range means not only including all integers and fractions within the range but also including their endpoints. As an example, the range 1 to 10 is described comprehensively in the same way as the list of values ​​for 1, 4, 6, and 10, and includes the independent partial range 3.4 to 7.2.

[0025] In embodiments of this disclosure, in tunneling magnetoresistive elements in which an insulating layer is sandwiched between multiple antiferromagnetic layers, a relatively large tunneling magnetoresistance (TMR) ratio is obtained by using a specific material in the insulating layer, based on the surface orientation of the antiferromagnetic layers. Therefore, when the tunneling magnetoresistive element is used in a magnetic memory, a relatively large readout signal can be obtained.

[0026] The implementation methods of each component will be described below.

[0027] [Double-layer films of magnetic materials and insulators, and tunneling magnetoresistive elements]

[0028] Figure 1This is a cross-sectional view showing one embodiment of a double-layer film containing a magnetic material and an insulator. An insulator layer 12 is stacked on top of an antiferromagnetic material layer 11.

[0029] in addition, Figure 2 This is a cross-sectional view showing one embodiment of the tunneling magnetoresistive element. An insulating layer 12 is stacked on an antiferromagnetic layer 11, and a second antiferromagnetic layer 13 is stacked on the insulating layer 12.

[0030] In the double-layer film of magnetic material and insulator and the tunneling magnetoresistive element disclosed herein, the materials of the antiferromagnetic layer 11 and the second antiferromagnetic layer 13 may be the same or different. Preferred materials include those selected from Mn3Sn, Mn3Ge, Mn3Ga, and Mn3A. x B 1-x (A and B are selected from Sn, Ge, and Ga, respectively, 0 < x < 1). These crystals have a cluster magnetic octapole polarization, which can be rotated by applying a magnetic field or a flowing current, resulting in a network of spin polarization defined by the magnetic octapole.

[0031] Furthermore, when the orientation of the surface of the antiferromagnetic layer 11 that is in contact with the insulating layer is (10-10), the preferred material of the insulator layer laminated on its (10-10) surface is shown in Table 1. When the orientation of the surface of the antiferromagnetic layer 11 that is in contact with the insulating layer is (0001), the preferred material of the insulating layer laminated on its (0001) surface is shown in Table 2.

[0032] When the orientation of the surface of the antiferromagnetic layer 11 that is in contact with the insulating layer is (10-10), the preferred material of the insulating layer 12 is shown in Table 3. When the orientation of the surface of the antiferromagnetic layer 11 that is in contact with the insulating layer is (0001), the preferred material of the insulating layer 12 is shown in Table 4.

[0033] [Table 1]

[0034]

[0035]

[0036]

[0037] [Table 2]

[0038]

[0039]

[0040]

[0041]

[0042] [Table 3]

[0043]

[0044] [Table 4]

[0045]

[0046] The thicknesses of the antiferromagnetic layer 11 and the second antiferromagnetic layer 13 are, for example, 0.5 nm to 40 nm, preferably 0.5 nm to 30 nm, and even more preferably 0.5 nm to 20 nm. The thickness of the insulating layer 12 is, for example, 0.5 nm to 5 nm, preferably 0.5 nm to 4 nm, and even more preferably 1 nm to 3 nm. By having each layer with this thickness, the resistance value can be adjusted to a value suitable for the device application.

[0047] The inventors of this disclosure have discovered that, by performing the simulations described below, a relatively large TMR ratio can be obtained by using a specific material in the insulating layer, based on the surface orientation of the antiferromagnetic layer.

[0048] (Simulation method)

[0049] To explore suitable materials for use as insulating layers in tunneling magnetoresistive elements, simulations were performed in the following three steps.

[0050] (1) The presence of Mn3Sn, Mn3Ge, Mn3Ga, and Mn3A as antiferromagnetic layers x B 1-x (A and B are selected from Sn, Ge, and Ga respectively, 0 < x < 1) Exploration of materials with similar crystal plane shapes, ensuring insulation, and capable of experimental fabrication.

[0051] (2) Exploration of materials with stable interfaces

[0052] (3) Exploration of materials with large TMR ratio

[0053] The following will explain in sequence.

[0054] (1) The presence of Mn3Sn, Mn3Ge, Mn3Ga, and Mn3A as antiferromagnetic layers x B 1-x (A and B are selected from Sn, Ge, and Ga respectively, 0 < x < 1) Exploration of materials with similar crystal plane shapes, ensuring insulation, and capable of experimental fabrication.

[0055] Obtain the crystal structures of materials disclosed in The Materials Project (https: / / materialsproject.org / ), and in each material, explore materials with crystal planes "having similar shapes" to the (10-10) and (0001) planes of the hexagonal crystal used in the antiferromagnetic layer. At this time, the crystal structures of the antiferromagnetic layers Mn3Sn, Mn3Ge, and Mn3Ga are used, employing the structures disclosed in The Materials Project. For Mn3A... x B 1-x (A, B = Sn, Ge, Ga, 0 < x < 1), using a weighted average of x for the crystal structures corresponding to the atoms of A and B. Regarding the "crystal planes with similar shapes," this is achieved by making Mn3Sn, Mn3Ge, Mn3Ga, and Mn3A... x B 1-x The (10-10) and (0001) planes of any one of the crystals are subjected to lattice deformation within a certain range to make them uniform. The (10-10) and (0001) planes are parallelograms, and the sides of lengths a and b (a < b) are connected by an angle θ. Here, the range of lattice deformation is set to -0.07 < p, q < 0.07 and -0.07 < p + q < 0.07 when the deformation is a, b → a × (1 + p), b × (1 + q). In addition, the angle θ is set to a deformation within ±3.5%.

[0056] Furthermore, the materials explored are selected based on the following conditions: they contain two, three, or four structural atoms; the band gap is 0.5 eV or higher; the formation energy is negative; the energy above the convex hull value is set to 0.15 eV / atom or lower to ensure insulation; and they are recorded in the Inorganic Crystal Structure Database (ICSD).

[0057] (2) Exploration of materials with stable interfaces

[0058] For the insulators in Tables 1 and 2 obtained in (1), from Mn3Sn, Mn3Ge, Mn3Ga, Mn3A x B 1-xAt least one of the following is selected for simulation calculations of a bilayer structure consisting of an insulating layer, a magnetic layer, and a vacuum surface. Here, the stacked surfaces are defined relative to the (10-10) surfaces of the magnetic layer in Table 1 and the (0001) surfaces of the magnetic layer in Table 2. For the bilayer structure, first-principles calculations are used for structural optimization near the interface. Local structural optimization of the internal coordinates of atoms in layers 2-4 near the interface is performed, with the interlayer distance and the position of the stacked surface set to minimize energy.

[0059] The interface energy in the bilayer structure obtained above is calculated using first-principles calculations. This clarifies the insulator capable of stably forming an interface with the antiferromagnetic layer. In calculating the interface energy, in addition to determining the bilayer structure, the individual energies of the insulator monomer, the magnetic monomer, the surface of the insulator, and the surface of the magnetic monomer are also calculated and subtracted from the bilayer structure. Here, the thickness of each layer is set to be 0.8 nm or more.

[0060] These energies and optimal interface structures are calculated using first-principles calculations: Quantum ESPRESSO (QE) (see P. Giannozzi, et al., Journal of Physics: Condensed Matter, 21, 395502 (2009)). The generalized gradient approximation based on the Perdew Burke-Ernzerhof (PBE) method was used to exchange the relevant generalized function within the framework of the Ultrasoft Pseudopotential (USPP) method (e.g., see G. Kresse and D. Joubert, Phys. Rev. B 59, T 1758 (1999)). The USPP was obtained from the QE website (see https: / / www.quantum-espresso.org / ). The energy cutoffs for the wave function and charge density were set to 50 Ry–80 Ry and 80 Ry–800 Ry, respectively. These calculations were performed under nonmagnetic conditions.

[0061] The interface energy obtained from the above is 2 J / m². 2The following interface energy is used to determine that the material can be stably fabricated into an insulating material with a layered structure with a magnetic material.

[0062] (3) Exploration of materials with large TMR ratio

[0063] The simulation object is a structure consisting of an insulating layer / magnetic layer A / insulator layer / magnetic layer B, which repeats the double-layer structure twice after removing the vacuum layer. Periodic boundary conditions are applied to the four-layer structure, and the tunneling conductivity is calculated and the TMR ratio is estimated, taking into account the magnetism. To simulate the TMR ratio according to first-principles theory, a PWCOND packet is used to calculate the QE packet of ballistic propagation along the stacking direction (z-direction) by solving the scattering problem using the Bloch wave function obtained from density functional theory (DFT). The k=(kx,ky) point grid on the xy plane is set to 32×32 to 64×64, and the transmittance T is calculated for each relative angle between the magnetic configuration (the cluster magnetic octupole moment of the two magnetic layers). The maximum (minimum) value of the transmittance is denoted as Tmax(min). Using Tmax(min), the TMR can be evaluated as (Tmax-Tmin) / Tmin.

[0064] In these tunneling magnetoresistive elements calculated through simulation, it was found that when the orientation of the surface of the antiferromagnetic layer 11 in contact with the insulating layer is (10-10), the insulating layer stacked on its (10-10) surface is shown in Table 1. In addition, when the orientation of the surface of the antiferromagnetic layer 11 in contact with the insulating layer is (0001), the insulating layer stacked on its (0001) surface is shown in Table 2, the TMB ratio becomes relatively large.

[0065] In one embodiment of this disclosure, the band gap of the compound contained in the insulating layer is 0.5 eV or more, in a more preferred embodiment it is 0.8 eV or more, and in an even more preferred embodiment it is 1.5 eV or more.

[0066] In one embodiment of this disclosure, the compound contained in the insulating layer has a negative formation energy, and its energy above the convex hull value is less than 0.15 eV / atom. In a more preferred embodiment, the compound contained in the insulating layer has an energy above the convex hull value of less than 0.02 eV / atom.

[0067] In one embodiment of this disclosure, the interfacial energy of the interface between the magnetic body and the insulator bilayer film, calculated using first-principles calculations, is 2 J / m. 2 In a more preferred embodiment, the interfacial energy at the interface between the magnetic material and the insulator, calculated using the first principle, is 1 J / m. 2 the following.

[0068] In one embodiment of this disclosure, the TMR ratio of the tunneling magnetoresistive element is 300% or more. In a more preferred embodiment, the TMR ratio of the tunneling magnetoresistive element is 1000% or more.

[0069] In one embodiment of this disclosure, the insulating layer is directly bonded to two antiferromagnetic layers. In another embodiment, one or more other layers are spaced between the insulating layer and the antiferromagnetic layers. These other layers disposed between the antiferromagnetic layers and the insulating layers are not particularly limited, as long as they can be formed by known film-forming methods such as sputtering, epitaxial growth (molecular beam epitaxy (MBE), metal-organic chemical vapor deposition (MOCVD), etc.). Examples of these other layers include layers containing Ta or Ru as materials.

[0070] [Double-layer films of magnetic materials and insulators, and methods for manufacturing tunneling magnetoresistive elements]

[0071] The double-layer film of the magnetic material and the insulator, as well as the tunneling magnetoresistive element, can be fabricated through the following process: (1) fabrication of the antiferromagnetic material layer 11; (2) lamination of the insulator layer 12 onto the antiferromagnetic material layer 11; (3) lamination of the second antiferromagnetic material layer 13 onto the insulator layer 12. Specific details will be provided below.

[0072] (1) Fabrication of antiferromagnetic layer 11

[0073] The antiferromagnetic layer 11 can be formed by depositing the material of the present disclosure on a substrate serving as an electrode using known film-forming methods such as sputtering, epitaxial growth (MBE, MOCVD, etc.).

[0074] When sputtering is used, the target material can be, for example, Mn3Sn.

[0075] Examples of materials for the substrate used as electrodes (substrate electrode layer) include W, Pt, or Ta, with a thickness typically ranging from 1 nm to 20 nm, preferably from 1 nm to 5 nm.

[0076] (2) The stacking of the insulating layer 12 toward the antiferromagnetic layer 11

[0077] Next, the insulating layer 12 is formed on the antiferromagnetic layer 11 using known film-forming methods such as sputtering. When using sputtering, metal oxides, nitrides, oxynitrides, etc., can be used as the target material. Reactive sputtering in an oxygen atmosphere or a nitrogen atmosphere can also be used.

[0078] (3) The second antiferromagnetic layer 13 is stacked onto the insulating layer 12.

[0079] Next, the antiferromagnetic layer 13 can be fabricated by forming the material of the present disclosure on the insulating layer 12 using known film-forming methods such as epitaxial growth (MBE, MOCVD, etc.).

[0080] When sputtering is used, the target material, similar to the antiferromagnetic layer 11, can be Mn3Sn, for example.

[0081] [Operation of the tunneling magnetoresistive element]

[0082] Figure 3 This is a cross-sectional view showing one embodiment of a tunneling magnetoresistive element. An insulating layer 12 and a second antiferromagnetic layer 13 are sequentially stacked on the surface of the antiferromagnetic layer 11 on the substrate electrode layer 10. Here, W, Pt, or Ta can be used as examples of spin current generation materials for the substrate electrode layer 10.

[0083] The spin polarization direction of the mesh-like structure of the first antiferromagnetic layer is preferably perpendicular to the antiferromagnetic layer 11, but it can also be tilted. In this tunneling magnetoresistive element, the resistance changes depending on the relative angle between the spin polarization direction of the antiferromagnetic layer 11 and the spin polarization direction of the second antiferromagnetic layer 13. Therefore, by rotating the spin polarization direction of the antiferromagnetic layer 11, a low-resistance state and a high-resistance state can be switched. This tunneling magnetoresistive element functions as a storage unit by using the difference in resistance values ​​before and after the switching as stored information.

[0084] For example, when the layers in the substrate electrode layer 10 are parallel to each other (e.g.) Figure 3 When current flows (in the direction of the horizontal dashed arrow), a spin current (spin Hall effect) is generated in the direction orthogonal to the current due to spin-orbit interaction, thereby generating magnetic torque in the antiferromagnetic layer 11. By changing the direction of the current in the substrate electrode layer 10, a spin polarization rotation is generated in the antiferromagnetic layer 11.

[0085] As previously explained, the antiferromagnetic layer 11 and the second antiferromagnetic layer 13 can be formed from the same material or from different materials. From the viewpoint of increasing the difference between the low-resistance state and the high-resistance state, it is preferable that the spin polarization direction of the antiferromagnetic layer 11 and the spin polarization direction of the second antiferromagnetic layer 13 are parallel to each other and lie in a plane. That is, if the spin polarization direction of the antiferromagnetic layer 11 is approximately perpendicular to the layer direction, it is preferable that the spin polarization direction of the second antiferromagnetic layer 13 is also approximately perpendicular to the layer direction; if the spin polarization direction of the first antiferromagnetic layer 11 is approximately parallel to the layer direction, it is preferable that the spin polarization direction of the second antiferromagnetic layer 13 is also approximately parallel to the layer direction.

[0086] In the tunneling magnetoresistive element disclosed herein, a relatively large TMR ratio can be obtained by using a specific material in the insulating layer, depending on the surface orientation of the antiferromagnetic layer.

[0087] [Magnetic storage]

[0088] A magnetic memory can be constructed by using multiple tunneling magnetoresistive elements as storage cells. The magnetic memory can utilize known structures. For example, the structures of magnetic memories described in U.S. Patent Application Publication No. 2022 / 0149269 and U.S. Patent Application Publication No. 2019 / 0267540 can be used. The descriptions in U.S. Patent Application Publication No. 2022 / 0149269 and U.S. Patent Application Publication No. 2019 / 0267540 related to the structure of the magnetic memory are incorporated herein by reference.

[0089] Figure 4 This is a circuit diagram illustrating one embodiment of the wiring of the memory cells that constitute part of the magnetic memory of this disclosure. For example... Figure 4 The storage cells shown are driven in a matrix configuration.

[0090] Within each memory cell, an insulating layer 12 and a second antiferromagnetic layer 13 are sequentially stacked on the surface of the antiferromagnetic layer 11 stacked on the substrate electrode layer 10, and a tunneling magnetoresistive element is formed thereon. The operation of the tunneling magnetoresistive element is the same as that described in the section on tunneling magnetoresistive elements.

[0091] Two power supply electrodes 15 and 15' are provided on the substrate electrode layer 10. The power supply electrodes 15 and 15' are respectively connected to the source of transistor 19 and transistor 19. The gate of transistor 19 and transistor 19' is connected to word line 17, and the drain of the two transistors 19 and 19' is respectively connected to the first write bit line 18 and the second write bit line 18'. The second antiferromagnetic layer 13 is connected to the read bit line 16 via electrode 14.

[0092] Here, when switching data by changing the resistance value, in order to achieve a data state, the first write bit line 18 is set to H level and the second write bit line 18' is set to L level. Then, by setting the word line 17 to H level, current flows from the first write bit line 18 to the second write bit line 18' within the substrate electrode layer 10, and the spin polarization of the antiferromagnetic layer 11 becomes a state corresponding to the current, which is a data state.

[0093] When switching the data, the first write bit line 18 is set to L level and the second write bit line 18' is set to H level. Then, by setting the word line 17 to H level, current flows from the second write bit line 18' toward the first write bit line 18 within the substrate electrode layer 10, changing the spin polarization of the antiferromagnetic layer 11, thereby switching the data.

[0094] When reading data stored in a memory cell, either the first write bit line 18 or the second write bit line 18' is set to H level, and the other is released. Then, by setting the read bit line 16 to L level and the word line 17 to H level, current flows from the first write bit line 18 and the second write bit line 18' to the read bit line 16. Therefore, by measuring the magnitude of the current, it is determined whether the memory cell is in a high-resistance state or a low-resistance state, thereby obtaining the data written in the memory cell.

[0095] In one embodiment of the magnetic storage device, by means of... Figure 4 The storage cells shown are arranged on a matrix, and the controller controls the levels of the write bit line, read bit line, and word line to perform the specified write and read operations.

[0096] In the magnetic memory of this embodiment, a relatively large read signal can be obtained by using a specific material in the insulating layer, based on the surface orientation of the antiferromagnetic layer.

[0097] Clearly, many modifications and variations of the present invention can be achieved based on the aforementioned instructions. Therefore, it should be understood that, within the scope of the appended claims, the present invention can be practiced using methods other than those specifically described in this specification.

[0098] Industrial availability

[0099] The double-layer film of the magnetic material and the insulator disclosed herein is useful for obtaining tunneling magnetoresistive elements, and tunneling magnetoresistive elements are useful for obtaining magnetic memory.

[0100] Explanation of icon numbers

[0101] 10: Substrate electrode layer

[0102] 11: Antiferromagnetic layer

[0103] 12: Insulating layer

[0104] 13: Second antiferromagnetic layer

[0105] 14: Electrode

[0106] 15: Power supply electrode

[0107] 19: Transistor

[0108] 17: Word Line

[0109] 18: First write bit line

[0110] 18': Second write bit line

[0111] 16: Read bit lines

Claims

1. A double-layer film of a magnetic material and an insulator, having an antiferromagnetic layer having a hexagonal crystal structure and at least one side being an antiferromagnetic (10-10) face, and an insulating layer having an insulator layer having a compound containing two, three, or four atoms stacked on the (10-10) face.

2. A double-layer film of a magnetic material and an insulator, having an antiferromagnetic layer having a hexagonal crystal structure and at least one side being an antiferromagnetic (0001) surface, and an insulating layer having an insulator layer having a compound containing two, three, or four atoms stacked on its (0001) surface.

3. The double-layer film of magnetic material and insulator according to claim 1, wherein, The compound includes those selected from BeTe, YbSe, PbF2, GeO2, PtO2, ThO2, Surfs, BN, LiF, Li2S, ZnSe, MgO, PtO2, BaO, LiC, CaSe, TiO2, FeS2, BN, CaS, YbS, AlAs, Li2Se, CdS, BeO, BN, CaF2, BeAl2O4, NaNbO3, SrZrO3, KMgF3, KTaO3, K2PtF6, BaZrO3, Mg2PN3, K2TiF6, KCuO2, NaTaO3, KNbO3, NaNbO3, SrHfO3, NaTaO3, Na2PdC2, Mg3(BO3)2, Li2SiO3, BaTiO3, SrTiO3, KNbO3, BaTiO3, CaTiO3, LiSi2N3, KZnF3, TiCoSb, BaTiO3, LiSiNO, KNbO3, BeO, Mg3NF3, SbOF, ZnF2, K2ReF6, K2GeF6, BeSiN2, K2PdF6, BN, HgF2, MgAlBO4, TeO2, RbMgF3, KF, Li3BN2, LiZnAs, LiBC, NbFeSb, LiZnP, BaLiF3, ScF3, GeO2, NbAgO3, Li3PO4, ZnAgF3, BeF2, LaCrO3, MgWO4, ZnWO4, NiO, NdCrO3, Mn3(BO3)2, FeWO4, WO3, TiPbO3, TiPbO3, NaVF3, PbO, NiWO4, HfPbO3, NaCl, CsCl, TlBr, LiI, NaBr, AgCl, AgBr, RbCl, RbBr, SrH2, H4CN2O, GaHO2, LiHO, CrHO2, MnO2, LuSBr, ErSCl, K2PdF4, RbH3O2, ErSeI, Li3BrO, DySBr, DySI, UCO5, InHO2, FeHO2, NiO2, SnO, KNO2, SrSnO3, LaFeO3, MoF3, RbNa2AuO2, KMnF3, UCO5, CoF2, GdSI, RbVF3, Li2CO3, FeF2, KVF3, KrF2, KNa2AuO2, ScF3, NaMgF3, SeO2, KCrF3, LiB6C, AgBr, SrAlSiH, KBr, BaAlSiH, InHO2, GaHO2, Ba2MgH6, HgH2NCl, Sr2MgH6, BN, KNbO3, SrAlGeH, KH4O2F, CuI, TiGePt, HoSI, Li2PNO2, ZrPbO3, GeO2, CO2, Na2TcF6, Mg(BC)2, K2TcF6,At least one of GeF2, ZnMoO4, LaGaO3, LaF3, BaBClF4, BaGaH5, SrH2, SrHN, BeCr2O4, and BaAlGeH.

4. The double-layer film of magnetic material and insulator according to claim 1, wherein, The compound comprises at least one selected from GeO2, PtO2, FeS2, BeAl2O4, K2TiF6, Mg3(BO3)2, K2GeF6, BeSiN2, K2PdF6, BN, LiBC, Mn3(BO3)2, TiPbO3, PbO, MnO2, LiB6C, InHO2, GaHO2, Mg(BC)2, and BeCr2O4.

5. The double-layer film of magnetic material and insulator according to claim 2, wherein, Precursors of solvents and solvents such as TiO2, AlF3, GeO2, PtO2, AlN, NaF, GaN, BN, LiF, YbO, MgO, BP, Be2 C、BN、Li2O、ZnO、ZnO、ZnO、BeO、BN、TiO2、LuPO4、AlCuO2、NaNbO3、Na2SO4、L i2ZrN2, KMgF3, KTaO3, ScCuO2, NaNbO2, K2PtF6, BaAl2O4, LiNbO2, Mg2PN3 K2TiF6, ErPO4, HoPO4, NaTaO3, Ge2N2O, ScPO4, TbPO4, KNbO3, TlNO2, Si2N2 O, Cd2SiO4, BaCO3, HfSiO4, TaBO4, Li2SiO3, BaTiO3, YPO4, AlAsO4, SrTiO3 KNbO3, LaAlO3, AlPO4, DyPO4, BaTiO3, CaTiO3, LiScO2, LiSi2N3, KZnF3, T mPO4, BaTiO3, LiCaAlF6, KLiSO4, KLiBeF4, KLiSO4, LiAlSiO4, SrLiAlF6, K LiSO4, SiO2, Be3N2, SiO2, SiC, KNbO3, InPO4, BeO, SiO2, CsCu3S2, K2GeF6, p tO2, K2PdF6, BN, AlF3, SiC, NaBe4SbO7, NaHgPO4, KAlSiO4, RbMgF3, CsF, Cd SO4, NbBO4, Cd(SbO3)2, PtF4, NaSi2N3, Ca2PN3, LiAlPdF6, Ca(SbO3)2, Sr( SbO3)2, Ba(SbO3)2, TiO2, LiBC, KAlSiO4, Li2CN2, LiYbAlF6, BaLiF3, Zn(R eO4)2, Na2GeTeO6, SrGeTeO6, K2CO3, ScF3, SiO2, Rb2PdC2, Rb2PtC2, Mg(Be N)2、MgSeO4、NbAgO3、LiCaGaF6、K2SiF6、TlPO4、Al4CO4、ZnAgF3、K2GeF6、N aGe2N3, Li2GeO3, AlTl(MoO4)2, RbLiCrO4, Na2CrO4, CrCdO4, Cr2SiO4, NiS eO4, LaCrO3, BaNiO2, SrMnO3, NiO, Na2FeO4, NdCrO3, LiMnVO4, FePO4, MgCr O4, CoO, BaNiO3, K3NaCr2O8, BaNiO3, RbLiCrO4, Li2WO4, Li2MnO2, NaCaVO4Li2NiO2、KAl(MoO4)2、PrCrO3、CrHgO4、WO3、VCrO4、NaVCdO4、 TiPbO3、NdCoO3、Na2CO3、Ga2PbO4、Sb2PbO6、NaMnO2、RhF3、Na2 SO3、Al2PbO4、Na2PtO2、BaSr(FeO2)4、VInO4、K3Na(SO4)2、SmCoO3、TlBr、LiIO3、KAs4BrO6、KAs4IO6、TlCl、KCl、RbCl、Mg(Al) H4)2、Mg3Si2H4O9、Mn(HO)2、GaHO2、ZrP2(HO3)2、CrHO2、MnO2、Li8CoO6、K2PdF4、Li8GeO6、Li8SiO6、Li3BrO、BaReH9、CsAl(M) oO4)2、Cs2PdC2、Cs2PtC2、MnVCuO4、NiO2、BaCO3、AlPO4、RbGeI O6、MgO、KNiIO6、CoSeO4、LaFeO3、CsCu3O2、K2Al2Sb2O7、Na5Mo NO4、Li2Mn2NiO6、LiCaCoF6、SiO2、MnSeO4、KNaSO4、SiO2、KAs4ClO6、Rb2Al2Sb2O7、LiCaCrF6、Li2SO4、KNaSO4、LiAlSiO4、Si O2、ScF3、Al2O3、FeBiO3、Al2ZnO4、MgAl2O4、LiCoO2、LaGaO3、 Si(NiO2)2、Mg2SiO4、MoS2、FeCuO2、MoSe2、Sr3(PO4)2、K2S、PN F2, K2MnF6, AlPO4, LiMgVO4, NaMgF3, BaZr(PO4)2, CaCO3, Na4CoAuO5, GdBO3, Li4Ca3(SiN3)2, FeP4, LiB6C, FeP4, Ga2Os, KBr, GaHO2, ZrP2(HO3)2, Ba3(H6Ir)2, Ba2MgH6, GaH3NF3, Sr2MgH6, BN, TiH8(NF3)2, Rb2S, MgMoN2, NaCoO2, KNbO3, SiO2, K4Hf5O 12 K2PtC2, BP, BaAl2(SiO4)2, Ca2SiO4, K2Mg2Si2O7, Li 14 P2(N2O)3, Li2PNO2, LiGe2N3, K2PdC2, GeO2, Na2TcF6, Mg(BC)2, KCrO2, ScAlCO, K2TcF6, CsFe(Mo O4)2, LaGaO3, VO2, Zn2PN3, AlF3, Sr3Ta2ZnO9, Sr3MgTa2O9, MgVCuO4, Rb3Lu(PO4)2, Rb3Er(PO4) 2. At least one of CaH2F4, BaCo2(PO4)2, Li2H6PtO6, LaCrTeO6, YCrTeO6, TbCrTeO6, DyCrTeO6, HoCrTeO6, YbH3CN3, ErCrTeO6, TmCrTeO6, SmCrTeO6, FeF3, GdCrTeO6, NdCrTeO6, PrCrTeO6, B6O, MoS2, and WS2.

6. The double-layer film of magnetic material and insulator according to claim 2, wherein, The compound comprises at least one selected from TiO2, AlN, GaN, Be2C, Li2O, ZnO, BeO, KMgF3, KTaO3, BaAl2O4, K2TiF6, NaTaO3, Li2SiO3, SrTiO3, LaAlO3, BaTiO3, KZnF3, CsCu3S2, K2GeF6, K2PdF6, Al2O3, FeBiO3, Al2ZnO4, MgAl2O4, SiC, RbMgF3, K2CO3, K2SiF6, Li2GeO3, SrMnO3, CoO, BaNiO3, Na2CO3, NaMnO2, Al2PbO4, Li8GeO6, K2MnF6, KNbO3, and Na2TcF6.

7. A tunneling magnetoresistive element having a double-layer film of a magnetic body and an insulator as described in claim 3, and a second antiferromagnetic film layer stacked on the insulator of the double-layer film.

8. A tunneling magnetoresistive element having a double-layer film of a magnetic body and an insulator as described in claim 4, and a second antiferromagnetic film layer stacked on the insulator of the double-layer film.

9. A magnetic storage device comprising a plurality of tunneling magnetoresistive elements as described in claim 7.

10. A magnetic storage device comprising a plurality of tunneling magnetoresistive elements as described in claim 8.

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