Test method for total dose irradiation and negative bias temperature instability coordination effect of PMOSFET (P-channel Metal Oxide Semiconductor Field Effect Transistor)
By designing an experimental method to investigate the synergistic effect of total dose irradiation and negative bias temperature instability in PMOSFETs, the reliability problem of PMOSFETs in space radiation environments was solved. The law and mechanism of the interaction between total dose irradiation and negative bias temperature instability were revealed, providing a basis for the performance evaluation of devices in radiation environments.
Patent Information
- Application Number
- CN202511844186.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-12-09
- Publication Date
- 2026-01-27
AI Technical Summary
In the existing technology, the reliability problems of PMOSFETs caused by total dose irradiation and negative bias temperature instability in space radiation environment have not been effectively solved, and there is a lack of scientific and reasonable test methods to evaluate their synergistic effect.
An experimental method was designed to investigate the synergistic effect of total dose irradiation and negative bias temperature instability in PMOSFETs, including sample selection, parameter testing, superposition experiments, and data processing. Through sequential superposition experiments and comprehensive experiments, the interaction law and mechanism between the two in small-sized devices were revealed.
This study provides a basis for evaluating the reliability of PMOSFETs under radiation environments, understanding the impact of the interaction between total dose irradiation and negative bias temperature instability, and providing a basis for the performance evaluation and reliability application of devices under radiation environments.
Smart Images
Figure CN121410488A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of reliability testing technology for microelectronic devices in special environmental applications, specifically to a test method for the synergistic effect of total dose irradiation and negative bias temperature instability of PMOSFETs, belonging to the fields of microelectronics technology and radiation protection technology. Background Technology
[0002] With advancements in semiconductor technology, metal-oxide-semiconductor (MOS) devices have entered the nanoscale realm. While device size has decreased, the power supply voltage has not decreased proportionally, leading to an increase in the internal electric field and more severe degradation in conventional reliability. Negative bias temperature instability (NBTI) is a significant reliability issue faced by P-channel MOS field-effect transistors (PMOSFETs).
[0003] Nanoscale devices used in space are subject to both total radiation dose and their own reliability. The failure rate of devices in the space radiation environment is caused by a combination of effects. In order to accurately evaluate the performance of devices in the space radiation environment and ensure the reliability of devices in the radiation environment, it is necessary to carry out research on the synergistic effect of total dose irradiation and negative bias temperature instability.
[0004] Studies on the NBTI effect of HfO2 gate dielectric devices after total dose irradiation indicate that total dose irradiation exacerbates NBTI damage, and some studies have shown that total dose irradiation plays a complex role in NBTI. However, few studies have revealed the influence of NBTI on the total dose effect, or the combined effect of the two. Since experimental methods are crucial for obtaining experimental patterns and damage mechanisms, only by establishing scientifically sound experimental methods can the synergistic effect of both be accurately obtained.
[0005] This invention proposes an experimental method for the synergistic effect of total dose irradiation and negative bias temperature instability of PMOSFETs. The method includes the design of test sample selection and parameter testing, superposition test, comprehensive test, and data processing method to obtain the law and mechanism of the synergistic effect of total dose irradiation and negative bias temperature instability of PMOSFETs, providing a basis for the reliability assessment of device radiation environment. Summary of the Invention
[0006] The purpose of this invention is to provide an experimental method for the synergistic effect of total dose irradiation and negative bias temperature instability in PMOSFETs. This method includes sample selection and parameter testing, superposition experiments, comprehensive experiments, and data processing. To more comprehensively study the mechanism of this synergistic effect, this method includes sequential superposition experiments of total dose and negative bias temperature instability, comprehensive experimental methods, and provides a method for comparing experimental data in the data processing. The method provided by this invention can obtain the influence of total dose irradiation on negative bias temperature instability, the influence of negative bias temperature instability on the total dose effect, and the changes in device characteristics under combined conditions. It obtains the interaction law and mechanism between the total dose effect and negative bias temperature instability, providing a basis for the performance evaluation and reliable application of small-size devices under radiation environments.
[0007] The present invention discloses a test method for the synergistic effect of total dose irradiation and negative bias temperature instability of PMOSFETs. This method comprises sample selection and parameter testing, superposition testing, comprehensive testing, and data processing. The specific operation is carried out according to the following steps: Test sample selection and parameter testing: a. Perform I / O testing on the same batch of P-channel metal-oxide-semiconductor field-effect transistors. DS -V GS Curve testing was performed to extract the threshold voltage, maximum transconductance, and subthreshold swing. The threshold voltage was calculated using the fixed current method, i.e., when the value of the drain-source current of the test sample is equal to the channel width-to-length ratio of the test sample multiplied by 10. -7 At time A, the corresponding gate-source voltage, devices with similar threshold voltages are selected as test samples. The sample numbers are divided into total dose and negative bias instability sequential superposition test group, negative bias temperature instability and total dose sequential superposition test group, and comprehensive test group. The total number of samples is determined according to the actual situation, but in order to ensure the statistical nature of the data, each group should have no less than 3 devices. Superposition experiment: b. Conduct experiments on the total dose and negative bias instability sequential superposition test group and the negative bias temperature instability and total dose sequential superposition test group from step a. For the total dose and negative bias instability sequential superposition test group, first conduct the total dose irradiation test, then conduct the negative bias temperature instability stress test on the irradiated device. An interval of 1 hour to 1 day can be allowed between the total dose irradiation test and the negative bias temperature instability test to ensure normal device characteristics before the negative bias temperature instability test. For the negative bias temperature instability and total dose sequential superposition test group, first conduct the negative bias... A temperature instability stress test is performed, followed by a total dose irradiation test. An interval of 1 hour to 1 day can be allowed between the negative bias temperature instability stress test and the total dose irradiation test to ensure normal device characteristics before the total dose irradiation test. In both superimposed tests, the total dose irradiation test method is consistent with the negative bias temperature instability stress test method. For the total dose irradiation test, it is recommended to select the on-state bias condition of the test sample. The negative bias temperature instability stress time is logarithmically calculated, and the temperature can be selected according to actual needs. The Ig of the test sample is tested before and after the superimposed test. DS -V GS Curves were used to extract threshold voltage, maximum transconductance, and subthreshold swing. Comprehensive test: c. Conduct the comprehensive test group from step a: During the total dose irradiation test, apply negative bias temperature instability stress. The total dose irradiation bias conditions and the test time during irradiation are consistent with those for the negative bias temperature instability stress; the test method for the negative bias temperature instability stress is consistent with that in step b; test the I of the test samples before and after the comprehensive test. DS -V GS Curves were used to extract threshold voltage, maximum transconductance, and subthreshold swing. d. Data processing: The total dose irradiation pattern of the test samples obtained in the total dose and negative bias instability sequential superposition test group, compared with the total dose irradiation pattern of the test samples in the negative bias temperature instability and total dose sequential superposition test group, reveals the superimposed effect of negative bias temperature instability on the total dose effect. Similarly, the negative bias temperature instability pattern in the total dose and negative bias instability sequential superposition test group, compared with the negative bias temperature instability pattern in the negative bias temperature instability and total dose sequential superposition test group, reveals the superimposed effect of total dose irradiation on subsequent negative bias temperature instability effects. By comparing the changes in total dose irradiation and negative bias temperature instability of the test samples in the superposition test with those in the comprehensive test, the mutual influence between the two can be obtained.
[0008] This invention discloses an experimental method for the synergistic effect of total dose irradiation and negative bias temperature instability in PMOSFETs. For small-size metal-oxide-semiconductor field-effect transistors (MOSFETs), reliability issues caused by the internal electric field of the device are prominent, with negative bias temperature instability being a significant problem. Devices operating in a radiation environment are simultaneously affected by total dose irradiation and negative bias temperature instability, which jointly determine the long-term reliability of the device. By establishing an experimental method, the interaction law and mechanism between the total dose effect and negative bias temperature instability are obtained, providing a basis for performance evaluation and reliable application of small-size devices under radiation environments.
[0009] The present invention provides an experimental method for the synergistic effect of total dose irradiation and negative bias temperature instability of PMOSFET. The beneficial effect of this method is that it can obtain the interaction and combined effect of total dose irradiation and negative bias temperature instability of PMOSFET, providing a basis for understanding the defect mechanism and establishing reliability assessment technology. Attached Figure Description
[0010] Figure 1 This is a flowchart of the present invention. Detailed Implementation Example
[0011] The present invention discloses a test method for the synergistic effect of total dose irradiation and negative bias temperature instability in PMOSFETs. This method comprises sample selection and parameter testing, superposition testing, comprehensive testing, and data processing, as shown in the figure. Figure 1 As shown, the specific operation is carried out according to the following steps: Test sample selection and parameter testing: a. Perform I on the same batch of PMOSFETs DS -V GS Curve testing was conducted to extract threshold voltage, maximum transconductance, and subthreshold swing. Nine devices with similar threshold voltages were selected as test samples. The samples were numbered and grouped: test samples 1-3 were used as the total dose and negative bias instability sequential superposition test group; test samples 4-6 were used as the negative bias temperature instability and total dose sequential superposition test group; and test samples 7-9 were used as the comprehensive test group. The total number of samples was determined according to the actual situation, but to ensure the statistical nature of the data, each group usually had no less than 3 devices. Superposition experiment: b. For test samples 1-3 of the test group in step a, which are sequentially superimposed with the total dose and negative bias instability, first conduct the total dose irradiation test, with the irradiation bias set to the on state. The total irradiation dose is set according to previous test data or by shifting the threshold voltage by 30%. When irradiated to the specified dose point, shift test sample I is then tested. DS -V GSCharacteristics were analyzed, including threshold voltage, maximum transconductance, and subthreshold swing. A 1-hour to 1-day interval was maintained between total dose irradiation and the negative bias temperature instability test to ensure normal device characteristics before the test. Negative bias temperature instability stress tests were then conducted on test samples 1-3. The stress was selected to be at least twice the power supply voltage, and the stress duration was selected as 1s, 3s, 10s, 30s, 100s, 300s, 1000s, or logarithmic times from 1s to 1000s. The Ig of the test samples was measured before and after the stress test. DS -V GS Characteristics, extract threshold voltage, maximum transconductance, and subthreshold swing; For test samples 4-6# in the negative bias temperature instability and total dose sequential superposition test group, the negative bias temperature instability stress test was carried out first, followed by the total dose irradiation test. There was an interval of 1 hour to 1 day between the negative bias temperature instability stress test and the total dose irradiation test to ensure that the device characteristics were normal before the total dose irradiation test. The test methods for both were the same as those for test samples 1-3#. Comprehensive test: c. For test samples #7-9 of the comprehensive test group, conduct total dose irradiation tests. During the irradiation test, apply negative bias temperature instability stress as a bias condition. Test the Ig of the test samples before and after the test. DS -V GS Curves were used to extract threshold voltage, maximum transconductance, and subthreshold swing. d. Data Processing: The total dose irradiation test results of test samples 1-3#, including threshold voltage, maximum transconductance, and subthreshold swing, are compared with the total dose irradiation test results of test samples 4-6# in step b to obtain the effect of total dose irradiation on NBTI in the superimposed test; then, the negative bias temperature instability test results of test samples 1-3# are compared with the negative bias temperature instability test results of test samples 4-6# to obtain the effect of negative bias temperature instability on the total dose effect in the superimposed test; the negative bias temperature instability test results of 4-6# are compared with those of 7-9# to obtain the effect of total dose irradiation on negative bias temperature instability under combined conditions; finally, the total dose irradiation test results of 1-3# are compared with those of 7-9# to obtain the effect of negative bias temperature instability on the total dose effect under combined conditions.
Claims
1. A test method for the synergistic effect of total dose irradiation and negative bias temperature instability in PMOSFETs, characterized in that... This method consists of sample selection and parameter testing, superposition experiments, comprehensive experiments, and data processing. The specific operation is carried out according to the following steps: Test sample selection and parameter testing: a. Perform I / O testing on the same batch of P-channel metal-oxide-semiconductor field-effect transistors. DS -V GS Curve testing was performed to extract the threshold voltage, maximum transconductance, and subthreshold swing. The threshold voltage was calculated using the fixed current method, i.e., when the value of the drain-source current of the test sample is equal to the channel width-to-length ratio of the test sample multiplied by 10. -7 At time A, the corresponding gate-source voltage, devices with similar threshold voltages are selected as test samples. The sample numbers are divided into total dose and negative bias instability sequential superposition test group, negative bias temperature instability and total dose sequential superposition test group, and comprehensive test group. The total number of samples is determined according to the actual situation, but in order to ensure the statistical nature of the data, each group should have no less than 3 devices. Superposition experiment: b. Conduct experiments on the total dose and negative bias instability sequential superposition test group and the negative bias temperature instability and total dose sequential superposition test group from step a. For the total dose and negative bias instability sequential superposition test group, first conduct the total dose irradiation test, then conduct the negative bias temperature instability stress test on the irradiated device. An interval of 1 hour to 1 day can be allowed between the total dose irradiation test and the negative bias temperature instability test to ensure normal device characteristics before the negative bias temperature instability test. For the negative bias temperature instability and total dose sequential superposition test group, first conduct the negative bias... A temperature instability stress test is performed, followed by a total dose irradiation test. An interval of 1 hour to 1 day can be allowed between the negative bias temperature instability stress test and the total dose irradiation test to ensure normal device characteristics before the total dose irradiation test. In both superimposed tests, the total dose irradiation test method is consistent with the negative bias temperature instability stress test method. For the total dose irradiation test, it is recommended to select the on-state bias condition of the test sample. The negative bias temperature instability stress time is logarithmically calculated, and the temperature can be selected according to actual needs. The Ig of the test sample is tested before and after the superimposed test. DS -V GS Curves were used to extract threshold voltage, maximum transconductance, and subthreshold swing. Comprehensive test: c. Conduct the comprehensive test group from step a: During the total dose irradiation test, apply negative bias temperature instability stress. The total dose irradiation bias conditions and the test time during irradiation are consistent with those for the negative bias temperature instability stress; the test method for the negative bias temperature instability stress is consistent with that in step b; test the I of the test samples before and after the comprehensive test. DS -V GS Curves were used to extract threshold voltage, maximum transconductance, and subthreshold swing. d. Data processing: The total dose irradiation pattern of the test samples obtained in the total dose and negative bias instability sequential superposition test group, compared with the total dose irradiation pattern of the test samples in the negative bias temperature instability and total dose sequential superposition test group, reveals the superimposed effect of negative bias temperature instability on the total dose effect. Similarly, the negative bias temperature instability pattern in the total dose and negative bias instability sequential superposition test group, compared with the negative bias temperature instability pattern in the negative bias temperature instability and total dose sequential superposition test group, reveals the superimposed effect of total dose irradiation on subsequent negative bias temperature instability effects. By comparing the changes in total dose irradiation and negative bias temperature instability of the test samples in the superposition test with those in the comprehensive test, the mutual influence between the two can be obtained.