Composite electronic detector, electronic detection equipment and detection method

Abstract

The invention provides a combined type electronic detector, electronic detection equipment and a detection method, and belongs to the technical field of electronic microscopic imaging. The combined type electronic detector adopts a structure that yttrium aluminum garnet crystals are arranged to partially cover a split type silicon diode detector, so that physical replacement of any detection body is not needed, and the detection efficiency is improved. According to the invention, signals of different areas can be selected and read through an electronic mode, so that an optimal detection mode is called under different working conditions, detection can be realized under the condition of high acceleration voltage, detection can also be realized under the condition of low acceleration voltage, one machine with two purposes is realized, and the performance and the application range of electron beam equipment are greatly improved.

Description

Technical Field

[0001] This invention relates to the field of electron microscopy imaging technology, and in particular to a composite electron detector, an electron detection device, and a detection method. Background Technology

[0002] In electron beam instruments such as scanning electron microscopes, transmission electron microscopes, and electron probe microscopes, the backscattered electron (BSE) detector is a key component for acquiring sample information. Backscattered electrons carry a wealth of sample information, including atomic number contrast (composition contrast), morphological contrast, and electron channel contrast.

[0003] Currently, the mainstream backscattered electron detectors are mainly solid-state detectors. Solid-state detectors are typically silicon diode detectors. Their principle is that high-energy electrons directly bombard a PN junction, generating a large number of electron-hole pairs, forming a measurable current signal. They use a silicon diode as the component; backscattered electrons bombard the surface of the silicon diode, exciting the drift of electron-hole pairs and generating a pulsed current. After amplification by a circuit, the signal is transmitted to a computer for synchronous imaging. The signal of each pixel is normalized and allocated to form a grayscale image. However, the disadvantages of this type of detector are its low detection sensitivity. It typically requires high voltage and high beam current, such as >15 kV and >1 nA, and performs poorly at low voltage and low beam current, exhibiting extremely low sensitivity to low-energy electrons. When the electron beam energy is below approximately 5 keV, most of the electron energy entering the silicon diode is dissipated in the electrodes and passivation layer, failing to effectively generate a signal, resulting in almost no imaging at low accelerating voltages. This greatly limits its application in ultra-high resolution imaging, insulator sample imaging, and the observation of electron beam-sensitive samples.

[0004] In summary, there is a long-standing technical pain point in the existing technology: the lack of a single detector solution that can simultaneously achieve high-sensitivity morphology / composition imaging at low-acceleration voltages while performing electron channel contrast imaging at high accelerating voltages. Summary of the Invention

[0005] This invention provides a composite electronic detector, electronic detection device, and detection method to overcome the shortcomings of existing solid-state detectors in detecting low-voltage scenarios, thereby achieving the effect of detection under both high and low accelerating voltage conditions.

[0006] This invention provides a composite electronic detector, comprising: A segmented silicon diode detector with multiple independent detection areas; At least one yttrium aluminum garnet crystal; wherein the at least one yttrium aluminum garnet crystal is disposed on a portion of the detection region of the silicon diode detector, such that the silicon diode detector simultaneously has: The uncovered first detection area is used for direct detection of electrons; and The covered second detection area is used to detect photons generated after the electronic signal is converted by the yttrium aluminum garnet crystal.

[0007] According to the present invention, a composite electronic detector is provided, wherein the segmented silicon diode detector has a ring-shaped segmented structure and has at least two concentric ring-shaped detection areas.

[0008] According to the present invention, a composite electronic detector is provided, wherein the segmented silicon diode detector comprises four concentric ring-shaped detection regions, and the yttrium aluminum garnet crystal covers half of each detection region along the axis of symmetry of each detection region.

[0009] According to the present invention, a composite electronic detector is provided, wherein the segmented silicon diode detector has a fan-shaped segmented structure and has at least two radially distributed fan-shaped detection areas.

[0010] According to the present invention, a composite electronic detector is provided, wherein the silicon diode detector is divided into four fan-shaped regions, and the yttrium aluminum garnet crystal covers two of the fan-shaped regions.

[0011] According to a composite electronic detector provided by the present invention, a moving mechanism is further included, wherein the yttrium aluminum garnet crystal adjusts its relative position with the silicon diode detector via the moving mechanism, and the moving mechanism is used to drive the yttrium aluminum garnet crystal to switch between the first detection area and the second detection area.

[0012] According to a composite electronic detector provided by the present invention, the moving mechanism is one or a combination of a translation mechanism, a rotation mechanism, or a telescopic mechanism to realize linear, rotational, or telescopic movement of the yttrium aluminum garnet crystal relative to the silicon diode detector.

[0013] The present invention also provides an electronic testing device, comprising: Electro-optical systems for generating electron beams; and The composite electron detector as described in any of the preceding claims is used to detect electrons generated by the interaction of the electron beam with the sample to be tested.

[0014] According to the present invention, an electronic detection device is a scanning electron microscope, an electron probe, an Auger electron spectrometer, a focused ion beam dual-beam electron microscope, a transmission electron microscope, or a scanning transmission electron microscope.

[0015] The present invention also provides a detection method for electronic imaging using the aforementioned composite electronic detector, comprising: When high-energy electron imaging or electron channel diffraction imaging is required, the signal generated by the first detection area not covered in the composite electron detector is acquired and processed. When low-energy electron imaging or high-sensitivity imaging is required, the signal generated by the second detection area covered by the composite electron detector is acquired and processed.

[0016] The composite electronic detector, electronic detection device, and detection method provided by this invention utilize a structure that partially covers the segmented silicon diode detector with a yttrium aluminum garnet crystal. Without the need for any physical replacement of the detector, it can electronically select and read signals from different regions, thereby calling up the optimal detection mode under different operating conditions. It can perform detection under both high and low accelerating voltage conditions, achieving dual functionality and greatly improving the performance and application range of electron beam equipment. Attached Figure Description

[0017] To more clearly illustrate the technical solutions in this invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0018] Figure 1 This is one of the structural schematic diagrams of the composite electronic detector provided by the present invention; Figure 2 is a second schematic diagram of the structure of the composite electronic detector provided by the present invention; Figure 3 is a third schematic diagram of the structure of the composite electronic detector provided by the present invention; Figure 4 is a fourth schematic diagram of the structure of the composite electronic detector provided by the present invention; Figure 5 is the fifth schematic diagram of the composite electronic detector provided by the present invention; Figure 6 is a schematic diagram of the composite electronic detector provided by the present invention. Figure 7 is the seventh schematic diagram of the composite electronic detector provided by the present invention. Detailed Implementation

[0019] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this invention. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without creative effort are within the scope of protection of this invention.

[0020] In the description of this invention, it should be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0021] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, "a plurality of" means two or more, unless otherwise explicitly specified.

[0022] The following is combined with Figure 1 Figure 7 illustrates the composite electronic detector, electronic detection device, and detection method of the present invention.

[0023] The composite electronic detector of this invention includes a segmented silicon diode detector with multiple independent detection areas and at least one yttrium aluminum garnet crystal.

[0024] The at least one yttrium aluminum garnet crystal is disposed on a portion of the detection area of ​​the silicon diode detector, such that the silicon diode detector simultaneously has an uncovered first detection area and a covered second detection area.

[0025] The uncovered first detection area is used for direct detection of electrons. The covered second detection area is used for detecting photons generated after the electron signal is converted by the yttrium aluminum garnet crystal.

[0026] The segmented silicon diode detector is the substrate and core signal acquisition unit of the composite electron detector. It is essentially a large-area semiconductor PN junction diode. Using modern semiconductor processes, multiple electrically isolated independent detection regions can be fabricated on its surface. When high-energy electrons bombard a region, electron-hole pairs are generated only within that region, forming a current signal, while other regions remain unaffected. The signal from each region can be independently extracted and amplified. This segmentation can be annular, such as multiple concentric rings, as shown in Figures 1 and 2, used to collect backscattered electrons at different emission angles to distinguish atomic number contrast and morphological contrast; or it can be sector-shaped, for example, dividing a circular detector into four quadrants, as shown in Figure 3. Figure 6 As shown, it is used to collect backscattered electrons from different directions and is often used to enhance topographic contrast or to perform electron channel contrast imaging.

[0027] In this embodiment of the invention, the silicon diode detector forms the basis for the direct detection of high-energy electrons and simultaneously acts as a photodetector to receive photons generated by the yttrium aluminum garnet crystal.

[0028] Yttrium aluminum garnet (YAG) crystal is a high-performance scintillator material. In the embodiments of this application, it can be processed into thin sheets or blocks of specific shapes. YAG crystal possesses excellent vacuum properties, high mechanical strength, resistance to electron beam irradiation damage, and very high cathodic luminescence efficiency, especially for low-energy electrons. When low-energy electrons bombard YAG, almost all the energy is used to excite YAG to generate photons, resulting in extremely high conversion efficiency.

[0029] In this embodiment, the silicon diode is not completely covered by a YAG crystal, but is only placed on a portion of the detection area of ​​the silicon diode detector. Thus, two functionally distinct regions can be divided within an integrated detector.

[0030] The first detection area (the uncovered area): This part is the exposed silicon diode detection area. It retains all the functions and advantages of a traditional solid-state detector. When the device operates at a high accelerating voltage (e.g., 20kV), backscattered electrons with energies up to 20keV can directly bombard these areas, generating a strong signal. Because these areas are segmented, they can be used for electron channel contrast imaging or to acquire angle-resolved signals.

[0031] The second detection area (the covered area): This part is the silicon diode detection area covered by the YAG crystal. When the device operates at a low accelerating voltage (e.g., 2kV), backscattered electrons with an energy of only 2keV bombard the surface of the YAG crystal. Although these low-energy electrons cannot penetrate the YAG, they efficiently excite the YAG to generate a large number of photons. These photons then propagate downwards and are detected by the silicon diode area immediately beneath it. In this process, the YAG acts as a signal converter, transforming the low-energy electron signal, which the silicon diode is insensitive to, into a photon signal that it is highly sensitive to.

[0032] The composite electronic detector provided by the present invention, by setting a structure in which a yttrium aluminum garnet crystal partially covers a segmented silicon diode detector, can electronically select and read signals from different regions without the need for any physical replacement of the detector. This allows for the selection of the optimal detection mode under different operating conditions, enabling detection under both high and low accelerating voltage conditions. This achieves dual functionality and greatly improves the performance and application range of electron beam equipment.

[0033] The present invention will now be further described through specific embodiments.

[0034] Example 1: Fixed composite detector based on ring segmentation.

[0035] As shown in Figures 1 and 2, this embodiment provides a composite electronic detector. The detector includes a segmented silicon diode detector and one or more yttrium aluminum garnet crystals. The segmented silicon diode detector has a ring-shaped segmented structure with at least two concentric ring-shaped detection regions.

[0036] In this embodiment, the segmented silicon diode detector is designed as a ring-shaped segmented structure. Specifically, it consists of a central circular detection region and multiple concentric ring-shaped detection regions surrounding it. For example, it can include four independent detection regions: the innermost ring region A, the middle ring region B, the outermost ring region C, and the outermost ring region D. These four regions are electrically isolated from each other, and each region has an independent electrode lead (not shown) for independent signal reading. This design allows the detector to acquire signals based on the electron emission angle. Typically, electrons with smaller emission angles (closer to perpendicular emission) carry more atomic number information and are captured by the innermost ring regions A and B; while electrons with larger emission angles carry more surface topography information and are captured by the outermost ring regions C and D.

[0037] As shown in Figure 1, the segmented silicon diode detector includes four concentric annular detection regions, and the yttrium aluminum garnet crystal covers half of each detection region along its axis of symmetry. Specifically, a semi-circular YAG crystal sheet can be placed over the right side of the four annular detection regions. The YAG crystal sheet covers half of each detection region along its axis of symmetry. Of course, in some embodiments, as shown in Figure 2, for example, the YAG crystal sheet can also cover the left half of the annular region.

[0038] Taking Figure 2 as an example, when the user needs to perform high-energy imaging, the signals generated by the uncovered right half of all annular regions will be mainly acquired and processed. Since high-energy backscattered electrons can directly generate strong signals in these regions, high-quality channel contrast images can be obtained. When the user needs to perform low-energy imaging, the signals generated by the left half of all annular regions covered by the YAG crystal will be mainly acquired and processed. Low-energy backscattered electrons bombard the YAG crystal sheet, and the resulting photons are detected by the underlying silicon diode region, thereby obtaining a low-voltage image with a high signal-to-noise ratio.

[0039] Understandably, in this embodiment, by cleverly enabling each angle acquisition ring to have dual-mode detection capability, researchers can choose to perform high-energy direct detection or low-energy indirect detection within any emission angle range, providing more flexibility for complex contrast analysis.

[0040] Example 2: Fixed composite detector based on sector segmentation.

[0041] As shown in Figures 3 to 6, this embodiment provides a composite electronic detector. This detector also includes a segmented silicon diode detector and one or more yttrium aluminum garnet crystals. The segmented silicon diode detector has a fan-shaped segmented structure with at least two radially distributed fan-shaped detection regions.

[0042] The silicon diode detector is divided into four fan-shaped regions, with the yttrium aluminum garnet crystal covering two of these regions. Specifically, the entire circular detector is symmetrically divided into four independent fan-shaped regions (quadrants): region A, region B, region C, and region D. These four regions are electrically insulated from each other, and their signals can be read out independently. This four-quadrant design allows for flexible acquisition of topographic contrast images by combining signals from different quadrants.

[0043] In one example, the yttrium aluminum garnet crystal is designed as a semi-circular sheet that can cover two adjacent sector regions in a four-region sector division. As shown in Figure 3, the yttrium aluminum garnet crystal covers regions B and D. As shown in Figure 4, the yttrium aluminum garnet crystal covers regions A and C. As shown in Figure 5, the yttrium aluminum garnet crystal covers regions A and B.

[0044] In another example, the yttrium aluminum garnet crystal is designed as two fan-shaped flakes, which are centrally symmetrically positioned over two opposing fan-shaped regions in a four-region fan-shaped division. As shown in Figure 6, the two fan-shaped flakes cover regions A and D, respectively.

[0045] It can be understood that the design of this embodiment ensures that, regardless of whether it is in high-energy mode or low-energy mode, morphological and compositional information can be obtained by adding and subtracting the signals of two opposing detectors, maintaining the consistency of the operational logic. Secondly, the centrally symmetrical layout of the first and second detection regions helps to reduce shadows or charging artifacts that may be introduced due to the geometric asymmetry of the detectors, improving the reliability and accuracy of imaging.

[0046] Referring to Figure 7, the composite electronic detector of this embodiment also includes a moving mechanism, namely the dark shaded area above the annularly segmented silicon diode detector in Figure 7. The YAG crystal is not fixedly mounted on the silicon diode, but is connected to the silicon diode detector via this moving mechanism. This moving mechanism is used to drive the YAG crystal to adjust its relative position to the silicon diode detector, thereby achieving dynamic switching of the detection mode.

[0047] The moving mechanism is one or a combination of a translation mechanism, a rotation mechanism, or a telescopic mechanism, to achieve linear, rotational, or telescopic movement of the yttrium aluminum garnet crystal relative to the silicon diode detector.

[0048] In high-voltage, high-current operating mode, the moving mechanism can move the YAG crystal to a position that does not obstruct the detection area of ​​the silicon diode (e.g., retract, move away, or flip). At this time, the entire detector works as a pure silicon diode detector for direct detection of high-energy backscattered electrons or for electron channel diffraction imaging.

[0049] In low-voltage, low-current operation mode, the moving mechanism can move the YAG crystal to a predetermined position, ensuring it covers all or part of the silicon diode detection area. At this time, the detector switches to high-sensitivity mode, utilizing the signal conversion and amplification capabilities of the YAG crystal for high-quality low-energy electron imaging.

[0050] The moving mechanism can be one or a combination of translation, rotation, or telescopic mechanisms to achieve linear, rotational, or telescopic movement of the YAG crystal relative to the silicon diode detector. It has a simple structure and is easy to switch.

[0051] Of course, in some embodiments, the moving mechanism can also move YAG crystals of a specific shape and number to a specific position at the silicon diode detector to achieve partial selective masking of the silicon diode detector to form any of the forms shown in Figures 1 to 6. There are no restrictions on the number of moving mechanisms or the form of movement.

[0052] This embodiment also discloses an electronic detection device comprising the aforementioned composite electronic detector. The electronic detection device includes an electron optical system for generating an electron beam and the composite electronic detector described in the foregoing embodiments.

[0053] In practical applications, this composite electron detector is typically installed inside the sample chamber of an electron optics system to detect electronic signals, such as backscattered or transmitted electrons, generated after the electron beam interacts with the sample. In scanning electron microscopy, the detector is usually mounted below the objective lens pole piece, with the detection surface facing the sample.

[0054] The electronic detection equipment described in this invention may be, but is not limited to, scanning electron microscopes, electron probes, Auger electron spectrometers, focused ion beam dual-beam electron microscopes, transmission electron microscopes, or scanning transmission electron microscopes.

[0055] In one example, the composite electron detector can be mounted below the objective pole piece of a scanning electron microscope, with the detection surface facing downwards. The region not covered by the YAG crystal can directly acquire high-energy backscattered electron signals, while the region covered by the YAG crystal converts low-energy backscattered electron signals into photons. These photon signals are then collected by silicon diodes in the covered region and used for imaging.

[0056] In another example, this composite electron detector can be installed inside the tube of a scanning electron microscope, with the detection surface facing downwards. The area not covered by the YAG crystal can directly collect the high-energy backscattered electron signal entering the tube, while the area covered by the YAG crystal converts the low-energy backscattered electron signal entering the tube into photons. The photon signal is then collected by the silicon diode in the covered area and used for imaging.

[0057] In another example, the composite electron detector can be mounted below the objective pole piece of a scanning electron microscope, with the detection surface facing downwards. The area not covered by the YAG crystal can directly acquire high-energy backscattered electron signals, while the area covered by the YAG crystal converts the low-energy backscattered electron signals entering the microscope tube into photons. The photon signals are then collected by the silicon diodes in the covered area and used for imaging.

[0058] In another example, the composite electron detector can be mounted below the objective pole piece of the electron probe, with the detection surface facing downwards. The area not covered by the YAG crystal can directly acquire high-energy backscattered electron signals, while the area covered by the YAG crystal converts low-energy backscattered electron signals into photons. These photon signals are then collected by the silicon diodes in the covered area and used for imaging.

[0059] In another example, the composite electron detector can be mounted below the pole shoe of the Auger electron spectroscopy objective, with the detection surface facing downwards. The region not covered by the YAG crystal can directly acquire high-energy backscattered electron signals, while the region covered by the YAG crystal converts low-energy backscattered electron signals into photons. These photon signals are then collected by the silicon diodes in the covered region and used for imaging.

[0060] In another example, this composite electron detector can be mounted below the objective lens pole shoe of a focused ion beam dual-beam electron microscope, with the detection surface facing downwards. The area not covered by the YAG crystal can directly acquire high-energy backscattered electron signals, while the area covered by the YAG crystal converts low-energy backscattered electron signals into photons. These photon signals are then collected by silicon diodes in the covered area and used for imaging.

[0061] In another example, the composite electron detector can be mounted below the pole shoe of the upper objective lens of a transmission electron microscope, with the detection surface facing downwards. The area not covered by the YAG crystal can directly acquire high-energy backscattered electron signals, while the area covered by the YAG crystal converts low-energy backscattered electron signals into photons. These photon signals are then collected by silicon diodes in the covered area and used for imaging.

[0062] In another example, the composite electron detector can be mounted below the pole shoe of the lower objective lens of a transmission electron microscope, with the detection surface facing upwards. The area not covered by the YAG crystal can directly acquire high-energy transmission electron signals, while the area covered by the YAG crystal converts low-energy transmission electron signals into photons. These photon signals are then collected by silicon diodes in the covered area and used for imaging.

[0063] In another example, the composite electron detector can be mounted below the pole shoe of the upper objective lens of a transmission electron microscope, with the detection surface facing downwards. The area not covered by the YAG crystal can directly acquire high-energy backscattered electron signals, while the area covered by the YAG crystal converts low-energy backscattered electron signals into photons. These photon signals are then collected by silicon diodes in the covered area and used for imaging.

[0064] In another example, the composite electron detector can be mounted below the pole shoe of the lower objective lens of a transmission electron microscope, with the detection surface facing upwards. The area not covered by the YAG crystal can directly acquire high-energy transmission electron signals, while the area covered by the YAG crystal converts low-energy transmission electron signals into photons. These photon signals are then collected by silicon diodes in the covered area and used for imaging.

[0065] This embodiment discloses a detection method for electron imaging using the aforementioned composite electron detector. This method can selectively acquire and process signals from different regions of the detector according to different imaging requirements. The method includes: acquiring and processing signals generated by a first detection region not covered by the composite electron detector when high-energy electron imaging or electron channel diffraction imaging is required; and acquiring and processing signals generated by a second detection region covered by the composite electron detector when low-energy electron imaging or high-sensitivity imaging is required.

[0066] When high-energy electron imaging or electron channel diffraction imaging is required, such as for crystal orientation analysis or observation of samples with strong atomic number contrast, the system primarily acquires and processes the signal generated by the first detection region not covered by the composite electron detector. This is because, under these conditions, direct electron detection offers better signal-to-noise ratio and imaging performance.

[0067] When low-energy electron imaging or high-sensitivity imaging is required, such as observing surface morphology details, electron beam-sensitive samples, or imaging in low-vacuum environments, the system primarily acquires and processes the signals generated by the second detection area covered by the composite electron detector. Under these conditions, the YAG crystal can effectively convert weak electron signals into more easily detectable photon signals, thereby significantly improving detection sensitivity and image signal-to-noise ratio.

[0068] This method allows users to easily switch between two complementary imaging modes on the same device without changing the hardware, greatly expanding the application range and imaging capabilities of electron microscopes.

[0069] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A composite electronic detector, characterized in that, include: A segmented silicon diode detector with multiple independent detection areas; At least one yttrium aluminum garnet crystal; wherein the at least one yttrium aluminum garnet crystal is disposed on a portion of the detection region of the silicon diode detector, such that the silicon diode detector simultaneously has: The uncovered first detection area is used for direct detection of electrons; as well as The covered second detection area is used to detect photons generated after the electronic signal is converted by the yttrium aluminum garnet crystal.

2. The composite electronic detector according to claim 1, characterized in that, The segmented silicon diode detector has a ring-shaped segmented structure with at least two concentric ring-shaped detection areas.

3. The composite electronic detector according to claim 2, characterized in that, The segmented silicon diode detector includes four concentric ring-shaped detection regions, and the yttrium aluminum garnet crystal covers half of each detection region along the axis of symmetry.

4. The composite electronic detector according to claim 1, characterized in that, The segmented silicon diode detector has a fan-shaped segmented structure with at least two radially distributed fan-shaped detection areas.

5. The composite electronic detector according to claim 4, characterized in that, The silicon diode detector is divided into four fan-shaped regions, and the yttrium aluminum garnet crystal covers two of these fan-shaped regions.

6. The composite electronic detector according to any one of claims 1-5, characterized in that, It also includes a moving mechanism, through which the yttrium aluminum garnet crystal adjusts its relative position to the silicon diode detector, and the moving mechanism is used to drive the yttrium aluminum garnet crystal to switch between the first detection area and the second detection area.

7. The composite electronic detector according to claim 6, characterized in that, The moving mechanism is one or a combination of a translation mechanism, a rotation mechanism, or a telescopic mechanism, to achieve linear, rotational, or telescopic movement of the yttrium aluminum garnet crystal relative to the silicon diode detector.

8. An electronic testing device, characterized in that, include: Electro-optical systems used to generate electron beams; as well as The composite electron detector as described in any one of claims 1-7 is used to detect electrons generated by the interaction between the electron beam and the sample to be tested.

9. The electronic testing equipment according to claim 8, characterized in that, The electronic detection equipment includes a scanning electron microscope, an electron probe, an Auger electron spectrometer, a focused ion beam dual-beam electron microscope, a transmission electron microscope, or a scanning transmission electron microscope.

10. A detection method for electronic imaging using the composite electronic detector as described in claim 1, characterized in that, include: When high-energy electron imaging or electron channel diffraction imaging is required, the signal generated by the first detection area not covered in the composite electron detector is acquired and processed. When low-energy electron imaging or high-sensitivity imaging is required, the signal generated by the second detection area covered by the composite electron detector is acquired and processed.

Images