Memory circuit and control method thereof, memory and electronic equipment
By introducing a first current mirror and a second node into the FeRAM storage circuit, the self-suppression problem when reading the digital signal 1 is solved, the uniformity and reliability of the FeRAM are improved, and the storage window is increased.
CN121768441APending Publication Date: 2026-03-31HUAWEI TECH CO LTD
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Patent Information
- Application Number
- CN202411398212.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-30
- Publication Date
- 2026-03-31
AI Technical Summary
Technical Problem
Existing FeRAMs suffer from self-suppression when reading digital signal 1, causing the ferroelectric capacitance to flip more and more slowly and incompletely, affecting uniformity and reliability, and reducing the storage window.
Method used
By introducing a first current mirror and a second node into the storage circuit, the potential difference between the board line and the bit line is ensured to be stable. The potential on the second node is used to determine whether the digital signal read by the storage circuit is 0 or 1, and the data determination is achieved through a comparison circuit.
Benefits of technology
It improves the uniformity and reliability of the storage circuit, increases the storage window, and avoids the occurrence of self-inhibition.
✦ Generated by Eureka AI based on patent content.
Abstract
The invention provides a storage circuit and a control method thereof, a memory and electronic equipment, and relates to the technical field of storage, and a ferroelectric capacitor can be fully overturned. The memory circuit includes a first ferroelectric memory cell, a first current mirror, a first voltage generating circuit, a comparison circuit, and a first voltage terminal. The first current mirror comprises a first branch circuit and a second branch circuit, one end of the first branch circuit and one end of the second branch circuit are electrically connected to a first voltage end, and the first branch circuit and the second branch circuit have the same current. The output end of the first ferroelectric storage unit and the other end of the first branch are electrically connected to a first node, the other end of the second branch is electrically connected to the output end of the first voltage generation circuit, the input end of the comparison circuit is electrically connected to a second node, and the output end of the comparison circuit is electrically connected to the output end of the storage circuit.
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