ITZO target material and preparation method thereof
By employing spray pyrolysis, cold isostatic pressing, and warm isostatic pressing processes, the problems of uneven composition and low density of ITZO targets were solved, resulting in the preparation of high-density ITZO targets for the fabrication of transparent conductive films with high light transmittance and excellent conductivity.
CN122277244APending Publication Date: 2026-06-26XIANDAO THIN FILM MATERIALS GUANGDONG CO LTD
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Patent Information
- Application Number
- CN202610446908.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2026-04-07
- Publication Date
- 2026-06-26
AI Technical Summary
Technical Problem
Existing ITZO sputtering targets suffer from uneven composition and low density, which limits their industrial application.
Method used
An ITZO target material with uniform composition and high density was prepared by using a preparation method combining spray pyrolysis with cold isostatic pressing and warm isostatic pressing, and by controlling the spray pyrolysis temperature, molding process, sintering temperature and atmosphere.
Benefits of technology
This significantly improves the compositional uniformity and density of the target material, enabling the preparation of transparent conductive films with high light transmittance and excellent conductivity, meeting the needs of high-end optoelectronic devices.
✦ Generated by Eureka AI based on patent content.
Abstract
The invention relates to the technical field of oxide target materials, and particularly discloses an ITZO target material and a preparation method thereof. The preparation method of the ITZO target material comprises the following steps: adding a complexing agent into a solution containing In < 3 + >, Sn < 4 + > and Zn < 2 + > to obtain a mixed solution; dropwise adding the mixed solution into an ammonia water solution, and carrying out aging treatment to obtain a precursor precipitate; sequentially carrying out spray pyrolysis treatment, cold isostatic pressing forming and warm isostatic pressing treatment on the precursor precipitate to obtain an ITZO biscuit; and the ITZO biscuit is subjected to programmed heating calcination treatment and programmed cooling treatment, and the ITZO target material is obtained. The ITZO target material with uniform components and high density is prepared through two times of static pressure treatment and dynamic regulation and control of mixed gas components in the programmed cooling process; a transparent conductive film with high visible light transmittance and good electrical properties can be prepared by adopting the target material through a sputtering process, and the technical problems that an existing target material is uneven in component, low in density, poor in sputtering film quality and the like are solved.
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