Single-tube power chip with self-protection function and connection structure thereof
By connecting a single-transistor power chip with a SiC MOSFET or IGBT structure to a copper strip and a nano-silver sintered layer, and combining software and hardware protection mechanisms, the reliability and safety issues of traditional power module chips in short-circuit protection are solved, achieving rapid circuit breaking and efficient heat dissipation, thus improving the safety and integration of the power module.
Patent Information
- Application Number
- CN202610283111.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2026-03-10
- Publication Date
- 2026-06-26
AI Technical Summary
Traditional power module chips suffer from problems such as insufficient bonding wire reliability, slow short-circuit protection speed, potential for secondary disasters, and limited heat dissipation performance in terms of short-circuit protection. Existing technologies cannot effectively solve the safety and reliability issues under short-circuit conditions.
The single-transistor power chip adopts SiC MOSFET or IGBT structure, combined with the connection structure of copper strip and nano-silver sintered layer. The copper strip is equipped with a fusible narrow aperture. Through the dual protection mechanism of software and hardware, the circuit is quickly disconnected in the event of a short circuit, and efficient heat dissipation is achieved through nano-silver sintered layer and ceramic copper-clad plate.
It achieves absolute safety protection under short-circuit conditions, avoids failures such as continuous arcing, explosion and fire, improves connection reliability and heat dissipation performance, simplifies structural design, and improves the integration level of power modules.