Graphene-based plasmon induced transparency and Fano resonance terahertz metamaterial sensor
By using a terahertz metamaterial sensor based on graphene-induced transparency and Fano resonance design, the problems of complex sensor design and insufficient anti-interference ability have been solved, achieving high sensitivity and dual-function switching, thereby enhancing the accuracy of material detection and the scope of applications.
CN122306743APending Publication Date: 2026-06-30GUILIN UNIV OF ELECTRONIC TECH
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Patent Information
- Application Number
- CN202610724460.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2026-05-25
- Publication Date
- 2026-06-30
AI Technical Summary
Technical Problem
Existing high-performance sensor designs are complex and lack sufficient anti-interference capabilities, while simplified designs fail to achieve the desired results.
Method used
A terahertz metamaterial sensor based on graphene plasmonic transparency and Fano resonance is designed. By adjusting the structural parameters and combining plasmonic transparency and Fano resonance, high sensitivity and anti-interference capability are achieved.
Benefits of technology
It achieves high sensitivity and dual-function switching capability. The sensor is insensitive to changes in polarization and incident angle, which significantly enhances the accuracy and application range of material detection.
✦ Generated by Eureka AI based on patent content.
Abstract
The invention provides a high-sensitivity metamaterial sensor based on single-layer graphene plasmon induced transparency (PIT) and Fano resonance, and aims to solve the problems that an existing terahertz wave band sensor is insufficient in sensitivity and tunability and the like. The specific graphene sensing structure is composed of a vertical graphene strip and graphene resonance rings designed on the left side and the right side in proportion, the symmetrical graphene structure is attached to a dielectric layer SiO2 with a proper relative dielectric constant, and a typical transmission type metamaterial sensor is jointly formed. The terahertz metamaterial sensor formed by the invention has excellent sensitivity as high as 2.84 THz / RIU, excellent quality factor and insensitivity to polarization and incident angle change. Besides, flexible switching of double functions can be realized by adjusting structural parameters, so that the substance detection precision is remarkably improved, and the sensing application range is remarkably widened. The sensor has the advantages of being high in sensitivity, high in tunability, simple in structure, high in stability and the like, the excellent characteristics of Fano resonance and the PIT effect are fused through the design, the high-sensitivity requirement of the sensor is met, and the performance limitation that a traditional sensor is single in function is successfully overcome.
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