Magnetic field sensing device

Abstract

The application discloses a magnetic field sensing device, comprising: a first magnetic field generating unit for applying a preset first excitation magnetic field to a first sensing unit; the first sensing unit is arranged in a first region and is used for sensing an ambient magnetic field to generate a first sensing signal; a second sensing unit is arranged in the first region and is used for sensing an ambient magnetic field to generate a second sensing signal; and an operation unit is used for generating a calibration signal according to the first sensing signal and the second sensing signal, wherein the calibration signal contains information corresponding to the first excitation magnetic field, and the calibration signal is used for calibrating the first sensing signal and / or the second sensing signal. The magnetic field sensing device provided by the application has higher sensitivity and can realize linear error calibration in a targeted manner.

Description

Technical Field

[0001] This invention relates to the field of testing and measurement technology, and in particular to a calibration device and a magnetic field detection device. Background Technology

[0002] Magnetic field sensing devices are used to sense magnetic fields and have a wide range of applications. In consumer electronics, they are used in applications such as triaxial magnetometers to measure the Earth's magnetic field, magnetic displacement gauges to measure the magnetic displacement formed by lenses, and magnetic switches to detect the opening and closing of screens. In industrial and transportation vehicles, they are used in applications such as angle sensors and current sensors.

[0003] To ensure the stability of the measurement process, a magnetic field sensing device can be prepared using magnetoresistive methods. However, such magnetic sensors rely on the properties of magnetic materials, and therefore exhibit the physical characteristic that the linear error of the output curve increases with the increase of the strength of the magnetic field being measured. This error can be calibrated using a calibration device.

[0004] In the prior art, two sets of sensing units are provided to measure the magnetic field to be measured. The linear error is removed by mutual cancellation. However, the sensitivity of the magnetic field sensing device will be lost due to this cancellation, making the sensing device unsuitable for scenarios with high sensitivity requirements. Summary of the Invention

[0005] One of the objectives of this invention is to provide a magnetic field sensing device to solve the technical problems of low sensitivity and poor output accuracy in existing magnetic field sensing devices.

[0006] To achieve one of the above-mentioned objectives, one embodiment of the present invention provides a magnetic field sensing device, comprising: a first magnetic field generating unit for applying a preset first excitation magnetic field to a first sensing unit; a first sensing unit disposed in a first region for sensing an ambient magnetic field to generate a first sensing signal; a second sensing unit disposed in the first region for sensing an ambient magnetic field to generate a second sensing signal; and a processing unit for generating a calibration signal based on the first sensing signal and the second sensing signal, wherein the calibration signal contains information corresponding to the first excitation magnetic field, and the calibration signal is used to calibrate the first sensing signal and / or the second sensing signal.

[0007] Compared with the prior art, the magnetic field sensing device provided by the present invention provides two sensing units located in the same area, one of which is subjected to a preset excitation magnetic field. This allows for the extraction of a calibration signal characterizing the excitation magnetic field information by processing the signals generated by the two sensing units. Since the excitation magnetic field information is preset, if the excitation magnetic field information contained in the calibration information differs from the preset excitation magnetic field information, it can be determined that the magnetic field sensing device has an error, and the sensing signal can be calibrated based on this difference. During this process, because the two sensing units are located in the same area, it helps to form a calibration signal regarding linear error between the two sensing signals, thereby enabling targeted and rapid calibration. Since both sensing units are configured to be sensitive to environmental magnetic fields, the device as a whole possesses high sensitivity. Attached Figure Description

[0008] Figure 1 This is a schematic diagram of the structure of a magnetic field sensing device according to an embodiment of the present invention.

[0009] Figure 2 This is a schematic diagram of the magnetic field sensing device in the first embodiment of the present invention.

[0010] Figure 3 This is a schematic diagram of the magnetic field sensing device in the second embodiment of the present invention.

[0011] Figure 4 This is a schematic diagram of the magnetic field sensing device in the third embodiment of the present invention.

[0012] Figure 5 This is a schematic diagram of the magnetic field sensing device in the first embodiment of the present invention.

[0013] Figure 6 This is a schematic diagram of the magnetic field sensing device in the second embodiment of the present invention.

[0014] Figure 7 This is a schematic diagram of the magnetic field sensing device in the third embodiment of the present invention.

[0015] Figure 8 This is a schematic diagram of the magnetic field sensing device in the fourth embodiment of the present invention.

[0016] Figure 9 This is a schematic diagram of the magnetic field sensing device in the fifth embodiment of the present invention.

[0017] Figure 10 This is a schematic diagram of the magnetic field sensing device in the sixth embodiment of the present invention.

[0018] Figure 11 This is a schematic diagram of the magnetic field sensing device in the seventh embodiment of the present invention.

[0019] Figure 12 This is a schematic diagram of the magnetic field sensing device in the eighth embodiment of the present invention.

[0020] Figure 13 This is a schematic diagram of the magnetic field sensing device in the ninth embodiment of the present invention.

[0021] Figure 14 This is a schematic diagram of the magnetic field sensing device in the tenth embodiment of the present invention.

[0022] Figure 15 This is a schematic diagram of the magnetic field sensing device in the eleventh embodiment of the present invention.

[0023] Figure 16 This is a schematic diagram of the magnetic field sensing device in the twelfth embodiment of the present invention.

[0024] Figure 17 This is a schematic diagram of the magnetic field sensing device in the thirteenth embodiment of the present invention.

[0025] Figure 18 This is a schematic diagram of the magnetic field sensing device in the fourteenth embodiment of the present invention.

[0026] Figure 19 This is a schematic diagram of the magnetic field sensing device in the fifteenth embodiment of the present invention.

[0027] Figure 20 This is a schematic diagram of the magnetic field sensing device in the sixteenth embodiment of the present invention.

[0028] Figure 21 This is a schematic diagram of the magnetic field sensing device in the seventeenth embodiment of the present invention.

[0029] Figure 22 This is a schematic diagram of the magnetic field sensing device in the eighteenth embodiment of the present invention.

[0030] Figure 23 This is a schematic diagram of the magnetic field sensing device in the nineteenth embodiment of the present invention.

[0031] Figure 24 This is a schematic diagram of the structure of a sensing unit in one embodiment of the present invention.

[0032] Figure 25 This is a partial structural schematic diagram of the sensing unit in another embodiment of the present invention.

[0033] Figure 26 This is a schematic diagram of the sensing unit in another embodiment of the present invention. Detailed Implementation

[0034] The present invention will now be described in detail with reference to the specific embodiments shown in the accompanying drawings. However, these embodiments do not limit the present invention, and any structural, methodological, or functional modifications made by those skilled in the art based on these embodiments are included within the scope of protection of the present invention.

[0035] It should be noted that the term "comprising" or any other variation thereof is intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus.

[0036] Furthermore, the terms "first," "second," and "third," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance. There is no necessary correlation between the terms "first," "second," and "third," etc.; for example, the inclusion of "second" in one embodiment provided by this invention does not necessarily mean that "first" is included in that embodiment, and so on.

[0037] One embodiment of the present invention provides a magnetic field sensing device, such as... Figure 1 As shown.

[0038] Magnetic field sensing devices are used to sense information about magnetic fields. Specifically, they can be used to sense signal magnetic fields in the environment to achieve functions such as motion data and position data measurement.

[0039] The magnetic field sensing device includes a first sensing unit 10.

[0040] The first sensing unit 10 is used to sense a magnetic field. The first sensing unit 10 is used to sense the ambient magnetic field in its environment, which includes the signal magnetic field; the ambient magnetic field may also include other magnetic fields, such as the excitation magnetic field described later.

[0041] In one embodiment, the first sensing unit 10 includes a magnetoresistive element; specifically, the first sensing unit 10 may be composed of a magnetoresistive element.

[0042] In one embodiment, the first sensing unit 10 includes a Hall unit; specifically, the first sensing unit 10 may be composed of a Hall unit.

[0043] The magnetic field sensing device includes a first magnetic field generating unit 11.

[0044] The first magnetic field generating unit 11 is used to apply a preset first excitation magnetic field Br1 to the first sensing unit 10.

[0045] The preset means that the direction and magnetic field strength of the first excitation magnetic field Br1 are preset and known.

[0046] The first magnetic field generating unit 11 can be configured as a coil, a magnet, or other structure capable of generating a local magnetic field to apply a first excitation magnetic field Br1.

[0047] The first magnetic field generating unit 11 can be disposed close to the first sensing unit 10 to apply a first excitation magnetic field Br1 to the first sensing unit 10.

[0048] The first excitation magnetic field Br1 applied by the first magnetic field generating unit 11 has at least a magnetic field component along the sensing direction of the first sensing unit 10.

[0049] In one embodiment, the first sensing unit 10 may have a sensing direction parallel to the plane in which the first sensing unit 10 is located. For example, the first sensing unit 10 may have a sensing direction along a first direction X or its opposite direction; or, for another example, the first sensing unit 10 may have a sensing direction along a second direction Y or its opposite direction.

[0050] Correspondingly, the first magnetic field generating unit 11 can apply a first excitation magnetic field Br1 parallel to the plane where the first sensing unit 10 is located to the first sensing unit 10. For example, the first sensing unit 10 has a sensing direction along a first direction X, and the first excitation magnetic field Br1 is along the first direction X or its opposite direction; or, for example, the first sensing unit 10 has a sensing direction along a second direction Y, and the first excitation magnetic field Br1 is along the second direction Y or its opposite direction.

[0051] In one embodiment, the first sensing unit 10 may have a sensing direction perpendicular to the plane in which the first sensing unit 10 is located. For example, the first sensing unit 10 may have a sensing direction along a third direction Z or its opposite direction.

[0052] Correspondingly, the first magnetic field generating unit 11 can apply a first excitation magnetic field Br1 perpendicular to the plane where the first sensing unit 10 is located to the first sensing unit 10. For example, the first sensing unit 10 has a sensing direction along the third direction Z, and the first excitation magnetic field Br1 is along the third direction Z or its opposite direction.

[0053] The first sensing unit 10 is disposed in the first region S1.

[0054] The first sensing unit 10 is used to sense the ambient magnetic field to generate a first sensing signal.

[0055] The first sensing unit 10 senses the ambient magnetic field, including the first excitation magnetic field Br1.

[0056] The first sensing unit 10 senses the overall environmental magnetic field of the environment in which the magnetic field sensing device is located, or the magnetic field component of the overall environmental magnetic field at the first region S1.

[0057] The first sensing signal can be in digital or analog form. The digital sensing signal can be data such as magnetic field strength and direction; the analog sensing signal can be a current signal or a voltage signal.

[0058] The magnetic field sensing device includes a second sensing unit 20.

[0059] The second sensing unit 20 is disposed in the first region S1. The second sensing unit 20 may be disposed in the same position as the first sensing unit 10, or it may be disposed in the first region S1 at a position close to the first sensing unit 10.

[0060] The second sensing unit 20 is used to sense the ambient magnetic field to generate a second sensing signal.

[0061] The second sensing unit 20 senses the overall environmental magnetic field of the environment in which the magnetic field sensing device is located, or the magnetic field component of the overall environmental magnetic field at the first region S1.

[0062] The second sensing signal can be in digital or analog form.

[0063] The difference between the second sensing signal and the first sensing signal is used to characterize the first excitation magnetic field Br1. Preferably, the difference between the ambient magnetic fields of the first sensing unit 10 and the second sensing unit 20 lies only in the first excitation magnetic field Br1.

[0064] The magnetic field sensing device includes a processing unit 800.

[0065] The arithmetic unit 800 is used to generate a calibration signal based on the first sensing signal and the second sensing signal. The calibration signal contains information corresponding to the first excitation magnetic field Br1.

[0066] In one embodiment, the calibration signal is used to calibrate the first sensing signal.

[0067] In one embodiment, the calibration signal is used to calibrate the second sensing signal.

[0068] In one embodiment, the calibration signal is used to calibrate the first sensing signal and the second sensing signal.

[0069] Thus, by setting two sensing units within the same first region S1, one of which applies a preset first excitation magnetic field Br1, the sensing signals output by both units determine the information corresponding to the excitation magnetic field. If the information corresponding to the excitation magnetic field in the calibration signal differs from the preset information of the first excitation magnetic field Br1, the magnetic field sensing device has a linear error caused by temperature, humidity, stress, etc. Therefore, the sensing signal can be calibrated according to the calibration signal to overcome this error caused by the structure of the sensing device itself. Furthermore, since both sensing units sense the ambient magnetic field, rather than a specific excitation magnetic field or signal magnetic field, the signal sensing of the sensing unit itself is not lost due to cancellation or other means, thus the sensitivity of the sensing device is stronger.

[0070] The arithmetic unit 800 is used to calibrate the sensing signal based on the difference between the value of the calibration signal and a first preset value. The sensing signal includes a first sensing signal and / or a second sensing signal.

[0071] The first preset value is determined based on information about the first excitation magnetic field; in one embodiment, the first preset value is determined based on the magnetic field strength of the first excitation magnetic field Br1. For example, the first preset value is equal to the magnetic field strength of the first excitation magnetic field Br1.

[0072] In one embodiment, when the detected value of the magnetic field strength corresponding to the first excitation magnetic field in the calibration signal is not equal to the first preset value, it indicates that the sensing situation of the magnetic field sensing device does not match the actual situation, and the sensing signal is calibrated at this time.

[0073] For example, when the detected value is less than the first preset value, it indicates that the sensing function of the magnetic field sensing device is too weak. In this case, the sensing signal should be calibrated and increased.

[0074] For example, when the detected value is greater than the first preset value, it indicates that the sensing condition of the magnetic field sensing device is too high. At this time, the sensing signal is calibrated and reduced.

[0075] In one embodiment, the magnetic field sensing device further includes a first amplifier 71. The first amplifier 71 amplifies the input signal according to a first amplification factor A1 and outputs it. The input terminal of the first amplifier 71 is coupled to the first sensing unit 10, and the output terminal of the first amplifier 71 is coupled to the arithmetic unit 800.

[0076] In one embodiment, the magnetic field sensing device further includes a second amplifier 72. The second amplifier 72 amplifies the input signal according to a second amplification factor A2 and outputs it. The input terminal of the second amplifier 72 is coupled to the second sensing unit 20, and the output terminal of the second amplifier 72 is coupled to the arithmetic unit 800.

[0077] In one embodiment, the first sensing unit 10 and the second sensing unit 20 are used to output a sensing signal in the form of a voltage. In this embodiment, the arithmetic unit 800 receives the first sensing signal V1 and the second sensing signal V2.

[0078] Figure 2 The first embodiment of the present invention is shown. The following description will elaborate on this first embodiment and... Figure 1 The differences between the technical solutions shown will not be elaborated upon here; in other words, Figure 1 and Figure 2 The embodiments shown can be combined or separated.

[0079] In one embodiment, the output of the arithmetic unit 800 is coupled to the first sensing unit 10.

[0080] In one embodiment, the output of the arithmetic unit 800 is coupled to the second sensing unit 20.

[0081] In one embodiment, the arithmetic unit 800 is used to adjust the drive current. For example, the output terminal of the arithmetic unit 800 is coupled to a first sensing unit 10 to adjust the drive current of the first sensing unit 10. For example, the output terminal of the arithmetic unit 800 is coupled to a second sensing unit 20 to adjust the drive current of the second sensing unit 20.

[0082] The arithmetic unit 800 can adjust the drive current based on the difference between the value of the calibration signal and the first preset value. When the value of the calibration signal is less than the first preset value, the arithmetic unit 800 increases the drive current; conversely, the arithmetic unit 800 decreases the drive current.

[0083] In one embodiment, the arithmetic unit 800 is used to adjust the driving voltage. For example, the output terminal of the arithmetic unit 800 is coupled to a first sensing unit 10 and used to adjust the driving voltage of the first sensing unit 10. For example, the output terminal of the arithmetic unit 800 is coupled to a second sensing unit 20 and used to adjust the driving voltage of the second sensing unit 20.

[0084] The arithmetic unit 800 can adjust the driving voltage specifically based on the difference between the value of the calibration signal and the first preset value. When the value of the calibration signal is less than the first preset value, the arithmetic unit 800 increases the driving voltage; conversely, the arithmetic unit 800 decreases the driving voltage.

[0085] Figure 3 A second embodiment of the present invention is shown. This second embodiment will be described in detail below. Figure 1 The differences between the technical solutions shown will not be elaborated upon here, and their similarities will not be repeated.

[0086] In one embodiment, the magnetic field sensing device includes a first amplifier 71. The input terminal of the first amplifier 71 is coupled to the output terminal of a first sensing unit 10, and the output terminal of the first amplifier 71 is coupled to a first input terminal of an arithmetic unit 800. The output terminal of the arithmetic unit 800 is coupled to the first amplifier 71; for example, the output terminal of the arithmetic unit 800 is coupled to a control terminal of the first amplifier 71 for adjusting the amplification factor of the first amplifier 71.

[0087] The arithmetic unit 800 can adjust the amplification factor of the first amplifier 71 specifically based on the difference between the value of the calibration signal and the first preset value. When the value of the calibration signal is less than the first preset value, the arithmetic unit 800 increases the amplification factor of the first amplifier 71; conversely, the arithmetic unit 800 decreases the amplification factor of the first amplifier 71.

[0088] In one embodiment, the magnetic field sensing device includes a second amplifier 72. The input terminal of the second amplifier 72 is coupled to the output terminal of the second sensing unit 20, and the output terminal of the second amplifier 72 is coupled to the second input terminal of the arithmetic unit 800. The output terminal of the arithmetic unit 800 is coupled to the second amplifier 72; for example, the output terminal of the arithmetic unit 800 is coupled to the control terminal of the second amplifier 72 for adjusting the amplification factor of the second amplifier 72.

[0089] The arithmetic unit 800 can adjust the amplification factor of the second amplifier 72 specifically based on the difference between the value of the calibration signal and the first preset value. When the value of the calibration signal is less than the first preset value, the arithmetic unit 800 increases the amplification factor of the second amplifier 72; conversely, the arithmetic unit 800 decreases the amplification factor of the second amplifier 72.

[0090] Figure 4 A third embodiment of the present invention is shown. This third embodiment will be described in detail below. Figure 1 The differences between the technical solutions shown will not be elaborated upon here, and their similarities will not be repeated.

[0091] In one embodiment, the arithmetic unit 800 is used to adjust the arithmetic gain of the first sensing signal according to the calibration signal.

[0092] The arithmetic unit 800 can specifically adjust the arithmetic gain of the first sensing signal based on the difference between the value of the calibration signal and the first preset value. When the value of the calibration signal is less than the first preset value, the arithmetic unit 800 increases the arithmetic gain of the first sensing signal; conversely, the arithmetic unit 800 decreases the arithmetic gain of the first sensing signal.

[0093] For example, the magnetic field sensing device includes a first processing unit 91. The first processing unit 91 processes the input signal according to a preset operational gain and then outputs it. The input terminal of the first processing unit 91 is coupled to a first amplifier 71 (or directly coupled to a first sensing unit 10), and the output terminal of the first processing unit 91 is coupled to an operational unit 800. The output terminal of the operational unit 800 is coupled to the first processing unit 91. For example, the output terminal of the first processing unit 91 is coupled to the input terminal of the operational unit 800, and the output terminal of the operational unit 800 is coupled to the control terminal of the first processing unit 91.

[0094] Alternatively, for example, the first sensing signal is directly coupled to the arithmetic unit 800, which is configured to adjust the arithmetic gain of the first sensing signal according to the calibration signal.

[0095] In one embodiment, the arithmetic unit 800 is used to adjust the arithmetic gain of the second sensing signal according to the calibration signal.

[0096] The arithmetic unit 800 can specifically adjust the arithmetic gain of the second sensing signal based on the difference between the value of the calibration signal and the first preset value. When the value of the calibration signal is less than the first preset value, the arithmetic unit 800 increases the arithmetic gain of the second sensing signal; conversely, the arithmetic unit 800 decreases the arithmetic gain of the second sensing signal.

[0097] For example, the magnetic field sensing device includes a second processing unit 92. The second processing unit 92 processes the input signal according to a preset operational gain and then outputs it. The input terminal of the second processing unit 92 is coupled to a second amplifier 72 (or directly coupled to a second sensing unit 20), and the output terminal of the second processing unit 92 is coupled to an operational unit 800. The output terminal of the operational unit 800 is coupled to the second processing unit 92. For example, the output terminal of the second processing unit 92 is coupled to the input terminal of the operational unit 800, and the output terminal of the operational unit 800 is coupled to the control terminal of the second processing unit 92.

[0098] Alternatively, for example, the second sensing signal is directly coupled to the arithmetic unit 800, which is configured to adjust the arithmetic gain of the second sensing signal according to the calibration signal.

[0099] Figure 5 The first embodiment of the present invention is shown. The following description will elaborate on this first embodiment and its relation to... Figure 1 The differences between the technical solutions shown will not be elaborated upon here, and their similarities will not be repeated.

[0100] The magnetic field sensing device includes a third sensing unit 30.

[0101] The third sensing unit 30 is disposed in the second region S2. The second region S2 is different from the first region S1. The two regions being different means that the first region S1 and the second region S2 do not completely overlap; the first region S1 and the second region S2 may partially overlap; the first region S1 and the second region S2 may not overlap at all.

[0102] The third sensing unit 30 is used to sense the ambient magnetic field to generate a third sensing signal.

[0103] The third sensing unit 30 senses the overall environmental magnetic field of the environment in which the magnetic field sensing device is located, or the magnetic field component of the overall environmental magnetic field at the second region S2.

[0104] Combination Figure 1 The arithmetic unit 800 is used to determine the magnetic field sensing signal of the magnetic field sensing device based on the value of the second sensing signal and the value of the third sensing signal.

[0105] When the second sensing signal is used to characterize the magnetic field component of the ambient magnetic field in the first region S1, and the third sensing signal is used to characterize the magnetic field component of the ambient magnetic field in the second region S2, the arithmetic unit 800 is used to implement common-mode or differential output based on the magnetic field components in the two different regions. The common-mode output reflects the overall magnetic field strength of the ambient magnetic field, while the differential output reflects the distribution gradient of the ambient magnetic field in different regions.

[0106] In this first embodiment, the arithmetic unit 800 can determine a common-mode sensing signal corresponding to the ambient magnetic field based on the sum of the values ​​of the second sensing signal and the third sensing signal. The magnetic field sensing signal of the magnetic field sensing device includes the common-mode sensing signal.

[0107] In this first embodiment, the arithmetic unit 800 can determine a differential sensing signal corresponding to the ambient magnetic field based on the difference between the value of the second sensing signal and the value of the third sensing signal. The magnetic field sensing signal of the magnetic field sensing device includes the differential sensing signal.

[0108] In one specific embodiment, the magnetic field sensing device further includes a third amplifier 73. The third amplifier 73 amplifies the input signal according to a third amplification factor A3 and outputs it. The input terminal of the third amplifier 73 is coupled to the third sensing unit 30, and the output terminal of the third amplifier 73 is coupled to the arithmetic unit 800. The output terminal of the arithmetic unit 800 can also be coupled to the control terminal of the third amplifier 73 for adjusting the amplification factor of the third amplifier 73.

[0109] In one specific embodiment, the third sensing unit 30 is used to output a sensing signal in the form of a voltage. In this embodiment, the arithmetic unit 800 receives the third sensing signal V3.

[0110] Figure 6 A second embodiment of the present invention is shown. The following description will elaborate on this second embodiment and its relation to... Figure 1 The differences between the technical solutions shown will not be elaborated upon here, and their similarities will not be repeated.

[0111] The magnetic field sensing device includes a second magnetic field generating unit 21.

[0112] The second magnetic field generating unit 21 is used to apply a preset second excitation magnetic field Br2 to the second sensing unit 20. The direction and magnetic field strength of the second excitation magnetic field Br2 are preset and known.

[0113] The second magnetic field generating unit 21 can be configured as a coil, a magnet, or other structure capable of generating a local magnetic field to apply a second excitation magnetic field Br2.

[0114] The second magnetic field generating unit 21 can be disposed close to the second sensing unit 20 to apply a second excitation magnetic field Br2 to the second sensing unit 20.

[0115] The second excitation magnetic field Br2 applied by the second magnetic field generating unit 21 has at least a magnetic field component along the sensing direction of the second sensing unit 20. For example, the second sensing unit 20 has a sensing direction along a first direction X or its opposite direction, and the second magnetic field generating unit 21 applies the second excitation magnetic field Br2 in the first direction X to the second sensing unit 20.

[0116] Correspondingly, the ambient magnetic field sensed by the second sensing unit 20 includes the second excitation magnetic field Br2.

[0117] In one specific embodiment, the ambient magnetic field sensed by the first sensing unit 10 includes a first excitation magnetic field Br1 and a first signal magnetic field corresponding to the first region S1. In another specific embodiment, the ambient magnetic field sensed by the second sensing unit 20 includes a second excitation magnetic field Br2 and the first signal magnetic field.

[0118] In one specific embodiment, the first sensing signal includes information corresponding to a first signal magnetic field and information corresponding to a first excitation magnetic field Br1. In another specific embodiment, the second sensing signal includes information corresponding to the first signal magnetic field and information corresponding to a second excitation magnetic field Br2.

[0119] Thus, a calibration signal containing information corresponding to the excitation magnetic field can be extracted based on the first sensing signal and the second sensing signal to calibrate the output of the magnetic field sensing device according to the difference, while information of the first signal magnetic field can be extracted to form a magnetic field sensing output for the first region S1.

[0120] In one specific embodiment, the arithmetic unit 800 is used to determine the first signal magnetic field based on the first sensing signal and the second sensing signal.

[0121] In one specific embodiment, the arithmetic unit 800 is used to determine a calibration signal based on a first sensing signal and a second sensing signal.

[0122] The second excitation magnetic field Br2 is in the opposite direction to the first excitation magnetic field Br1. In one specific embodiment, the magnetic field strength of the second excitation magnetic field Br2 is the same as that of the first excitation magnetic field Br1.

[0123] In this embodiment, the arithmetic unit 800 is specifically used to determine the first signal magnetic field based on the sum of the values ​​of the first sensing signal and the second sensing signal. Thus, by performing calculations to remove the excitation magnetic field from the first and second sensing signals, the first signal magnetic field is extracted to achieve magnetic field sensing.

[0124] The arithmetic unit 800 is specifically used to determine the calibration signal based on the difference between the values ​​of the first sensing signal and the second sensing signal. Thus, by performing calculations to remove the first signal magnetic field from the first and second sensing signals, a calibration signal corresponding to the excitation magnetic field is extracted, and this signal is used to calibrate the sensing output.

[0125] Figure 7 A third embodiment of the present invention is shown. The following description will elaborate on this third embodiment and its relation to... Figure 1 The differences between the technical solutions shown will not be elaborated upon here, and their similarities will not be repeated.

[0126] The magnetic field sensing device includes a third magnetic field generating unit 31.

[0127] The third magnetic field generating unit 31 is used to apply a preset third excitation magnetic field Br3 to the third sensing unit 30. The direction and magnetic field strength of the third excitation magnetic field Br3 are preset and known.

[0128] The third magnetic field generating unit 31 can be configured as a coil, a magnet, or other structure capable of generating a local magnetic field to apply a third excitation magnetic field Br3.

[0129] The third magnetic field generating unit 31 can be disposed close to the third sensing unit 30 to apply a third excitation magnetic field Br3 to the third sensing unit 30.

[0130] The third excitation magnetic field Br3 applied by the third magnetic field generating unit 31 has at least a magnetic field component along the sensing direction of the third sensing unit 30. For example, the third sensing unit 30 has a sensing direction along the first direction X or its opposite direction, and the third magnetic field generating unit 31 applies a third excitation magnetic field Br3 in the opposite direction of the first direction X to the third sensing unit 30.

[0131] The magnetic field sensing device includes a third sensing unit 30.

[0132] The third sensing unit 30 can be as follows: Figure 5 The first embodiment shown is configured.

[0133] The third sensing unit 30 is disposed in the second region S2. The second region S2 is different from the first region S1.

[0134] The third sensing unit 30 is used to sense the ambient magnetic field to generate a third sensing signal.

[0135] The third sensing unit 30 senses the overall environmental magnetic field of the environment in which the magnetic field sensing device is located, or the magnetic field component of the overall environmental magnetic field at the second region S2.

[0136] Correspondingly, the ambient magnetic field sensed by the third sensing unit 30 includes the third excitation magnetic field Br3.

[0137] In one specific embodiment, the ambient magnetic field sensed by the first sensing unit 10 includes a first excitation magnetic field Br1 and a first signal magnetic field corresponding to the first region S1. In another specific embodiment, the ambient magnetic field sensed by the third sensing unit 30 includes a third excitation magnetic field Br3 and a second signal magnetic field corresponding to the second region S2.

[0138] In one specific embodiment, the first sensing signal includes information corresponding to a first signal magnetic field and information corresponding to a first excitation magnetic field Br1. In another specific embodiment, the third sensing signal includes information corresponding to a second signal magnetic field and information corresponding to a third excitation magnetic field Br3.

[0139] Thus, based on the first sensing signal and the third sensing signal, the difference or superposition result of the first signal magnetic field and the second signal magnetic field can be extracted to form a magnetic field sensing output for the first region S1 and the second region S2.

[0140] In one specific embodiment, the arithmetic unit 800 is used to determine the magnetic field sensing signal of the magnetic field sensing device based on the first sensing signal and the third sensing signal.

[0141] The third excitation magnetic field Br3 has the same direction as the first excitation magnetic field Br1. In one specific embodiment, the magnetic field strength of the third excitation magnetic field Br3 is the same as that of the first excitation magnetic field Br1. In another specific embodiment, the third excitation magnetic field Br3 is the same as that of the first excitation magnetic field Br1.

[0142] In this embodiment, the arithmetic unit is specifically used to determine the magnetic field sensing signal of the magnetic field sensing device based on the difference between the values ​​of the first sensing signal and the second sensing signal. The magnetic field sensing signal includes a differential magnetic field signal corresponding to the first region S1 and the second region S2.

[0143] Figure 8 The fourth embodiment of the present invention is shown, and the following description will elaborate on this fourth embodiment and its relation to the present invention. Figure 1 The differences between the technical solutions shown will not be elaborated upon here, and their similarities will not be repeated.

[0144] The magnetic field sensing device includes a second magnetic field generating unit 21.

[0145] The second magnetic field generating unit 21 is used to apply a preset second excitation magnetic field Br2 to the second sensing unit 20. The direction and magnetic field strength of the second excitation magnetic field Br2 are preset and known.

[0146] The second magnetic field generating unit 21 can be configured as a coil, a magnet, or other structure capable of generating a local magnetic field to apply a second excitation magnetic field Br2.

[0147] The second magnetic field generating unit 21 can be disposed close to the second sensing unit 20 to apply a second excitation magnetic field Br2 to the second sensing unit 20.

[0148] Correspondingly, the ambient magnetic field sensed by the second sensing unit 20 includes the second excitation magnetic field Br2.

[0149] The second excitation magnetic field Br2 is in the opposite direction to the first excitation magnetic field Br1. Specifically, the second excitation magnetic field Br2 is in the opposite direction to the first excitation magnetic field Br1, but has the same intensity.

[0150] The second magnetic field generating unit 21 can be as follows: Figure 6 The second embodiment shown is configured.

[0151] The magnetic field sensing device includes a third magnetic field generating unit 31.

[0152] The third magnetic field generating unit 31 is used to apply a preset third excitation magnetic field Br3 to the third sensing unit 30. The direction and magnetic field strength of the third excitation magnetic field Br3 are preset and known.

[0153] The third magnetic field generating unit 31 can be configured as a coil, a magnet, or other structure capable of generating a local magnetic field to apply a third excitation magnetic field Br3.

[0154] The third magnetic field generating unit 31 can be disposed close to the third sensing unit 30 to apply a third excitation magnetic field Br3 to the third sensing unit 30.

[0155] The third excitation magnetic field Br3 is in the same direction as the first excitation magnetic field Br1. Specifically, the third excitation magnetic field Br3 is in the same direction and has the same intensity as the first excitation magnetic field Br1.

[0156] The third magnetic field generating unit 31 can be as follows: Figure 7 The third embodiment shown is configured.

[0157] The magnetic field sensing device includes a third sensing unit 30.

[0158] The third sensing unit 30 is disposed in the second region S2.

[0159] The third sensing unit 30 is used to sense the ambient magnetic field to generate a third sensing signal.

[0160] The third sensing unit 30 senses the overall environmental magnetic field of the environment in which the magnetic field sensing device is located, or the magnetic field component of the overall environmental magnetic field at the second region S2.

[0161] The third sensing unit 30 can be as follows: Figure 5 The first embodiment shown is configured.

[0162] Combination Figure 1 In one specific embodiment, the arithmetic unit 800 determines the magnetic field sensing signal of the magnetic field sensing device based on the sum of the values ​​of the second sensing signal and the third sensing signal. The magnetic field sensing signal includes a common-mode sensing signal.

[0163] For example, let the value of the second sensing signal be V2, the value of the first signal magnetic field be Vsig1, the value of the second excitation magnetic field be Vbr2, the value of the third sensing signal be V3, the value of the second signal magnetic field be Vsig2, and the value of the third excitation magnetic field be Vbr3. When the first direction X is defined as the positive direction, and Vbr2 = Vbr3, then the value of the common-mode sensing signal Vcom satisfies:

[0164] V2+V3=(Vsig1+Vbr2)+(Vsig2-Vbr3)=Vsig1+Vsig2=Vcom.

[0165] The first signal magnetic field and the second signal magnetic field are not limited, and can have components in the first direction or the opposite direction.

[0166] In one specific embodiment, the arithmetic unit 800 determines the magnetic field sensing signal of the magnetic field sensing device based on the sum of the values ​​of the first sensing signal and the second sensing signal. The magnetic field sensing signal includes information about the first signal magnetic field.

[0167] For example, let the value of the first sensing signal be V1, and the value of the first excitation magnetic field be Vbr1. When the first direction X is defined as the positive direction, and Vbr1 = Vbr2, then the value of the first signal magnetic field Vsig1 satisfies:

[0168] V1+V2=(Vsig1-Vbr1)+(Vsig1+Vbr2)=2Vsig1.

[0169] In one specific embodiment, the arithmetic unit 800 determines a calibration signal based on the difference between the value of the second sensing signal and the value of the first sensing signal.

[0170] For example, when the first direction X is defined as the positive direction and Vbr1 = Vbr2, the value of the calibration signal Vref satisfies:

[0171] V2-V1=(Vsig1+Vbr2)-(Vsig1-Vbr1)=2Vbr1=Vref.

[0172] In one specific embodiment, the arithmetic unit 800 determines the magnetic field sensing signal of the magnetic field sensing device based on the difference between the value of the third sensing signal and the value of the first sensing signal. The magnetic field sensing signal includes a differential sensing signal.

[0173] For example, when the first direction X is defined as the positive direction and Vbr1 = Vbr3, the value Vdiff of the differential sensing signal satisfies:

[0174] V3-V1=(Vsig2-Vbr3)-(Vsig1-Vbr1)=Vsig2-Vsig1=Vdiff.

[0175] Figure 9 The fifth embodiment of the present invention is shown, and the following description will elaborate on this fifth embodiment and its relation to the present invention. Figure 5 The differences between the first embodiment shown and the similarities between the two will not be repeated here.

[0176] The magnetic field sensing device includes a fourth sensing unit 40.

[0177] The fourth sensing unit 40 is disposed in the second region S2. The fourth sensing unit 40 may be disposed in the same position as the third sensing unit 30, or it may be disposed in the second region S2 at a position close to the third sensing unit 30.

[0178] The fourth sensing unit 40 is used to sense the ambient magnetic field to generate a fourth sensing signal.

[0179] The fourth sensing unit 40 senses the overall environmental magnetic field of the environment in which the magnetic field sensing device is located, or the magnetic field component of the overall magnetic field environment at the second region S2.

[0180] In one specific embodiment, the magnetic field sensing device includes a first amplifier 71, the input terminal of the first amplifier 71 is coupled to a first sensing unit 10 and a fourth sensing unit 40, and the output terminal of the first amplifier 71 is used to generate a first intermediate output.

[0181] Combination Figure 1 The arithmetic unit 800 is used to determine a calibration signal based on the value of the first sensing signal and the value of the fourth sensing signal; the arithmetic unit 800 is used to determine a calibration signal based on the value of the second sensing signal and the value of the third sensing signal.

[0182] In one specific embodiment, the arithmetic unit 800 is used to determine a calibration signal based on the difference between the value of the first sensing signal and the value of the fourth sensing signal, and the difference between the value of the second sensing signal and the value of the third sensing signal.

[0183] For example, if the value of the fourth sensing signal is defined as V4, and the value of the first intermediate output is defined as Vo1 (Vo1 = V4 - V1), when the first direction X is defined as the positive direction and Vbr1 = Vbr2, then the value of the calibration signal Vref satisfies:

[0184] Vo1-(V3-V2)=(V4-V1)-(V3-V2)=(Vsig1-Vbr1-Vsig2)-(Vsig2-Vsig1)

[0185] =-Vbr1=Vref

[0186] In one specific embodiment, the arithmetic unit 800 is used to determine a calibration signal based on the sum of the values ​​of the first sensing signal and the fourth sensing signal, and the sum of the values ​​of the second sensing signal and the third sensing signal.

[0187] For example, if the value of the fourth sensing signal is defined as V4, and the value of the first intermediate output is defined as Vo1 (Vo1 = V4 - V1), when the first direction X is defined as the positive direction and Vbr1 = Vbr2, then the value of the calibration signal Vref satisfies:

[0188] Vo1-(V2-V3)=(V4+V1)-(V2+V3)=(Vsig2+Vsig1-Vbr1)-(Vsig2+Vsig1)

[0189] =-Vbr1=Vref

[0190] Figure 10 The sixth embodiment of the present invention is shown, and the following description will elaborate on this sixth embodiment and its relation to the present invention. Figure 9 The differences between the fifth embodiment shown will not be repeated here, as will the similarities between the two.

[0191] The magnetic field sensing device includes a fifth sensing unit 50.

[0192] The fifth sensing unit 50 is disposed in the first region S1. The fifth sensing unit 50 may be disposed in the same position as the first sensing unit 10, or it may be disposed in the first region S1 at a position close to the first sensing unit 10. The fifth sensing unit 50 may be disposed in the same position as the second sensing unit 20, or it may be disposed in the first region S1 at a position close to the second sensing unit 20.

[0193] The fifth sensing unit 50 is used to sense the ambient magnetic field to generate a fifth sensing signal.

[0194] The fifth sensing unit 50 senses the overall environmental magnetic field of the environment in which the magnetic field sensing device is located, or the magnetic field component of the overall magnetic field environment at the first region S1.

[0195] In one specific embodiment, the magnetic field sensing device includes a second amplifier 72, the input of which is coupled to a second sensing unit 20 and a fifth sensing unit 50, and the output of which is used to generate a second intermediate output.

[0196] The magnetic field sensing device includes a sixth sensing unit 60.

[0197] The sixth sensing unit 60 is disposed in the second region S2. The sixth sensing unit 60 may be disposed in the same position as the third sensing unit 30, or it may be disposed in the second region S2 at a position close to the third sensing unit 30. The sixth sensing unit 60 may be disposed in the same position as the fourth sensing unit 40, or it may be disposed in the second region S2 at a position close to the fourth sensing unit 40.

[0198] The sixth sensing unit 60 is used to sense the ambient magnetic field to generate a sixth sensing signal.

[0199] The sixth sensing unit 60 senses the overall environmental magnetic field of the environment in which the magnetic field sensing device is located, or the magnetic field component of the overall magnetic field environment at the second region S2.

[0200] In one specific embodiment, the magnetic field sensing device includes a third amplifier 73, the input of which is coupled to a third sensing unit 30 and a sixth sensing unit 60, and the output of which is used to generate a third intermediate output.

[0201] Combination Figure 1 The arithmetic unit 800 is used to determine the magnetic field sensing signal of the magnetic field sensing device based on the value of the second sensing signal and the value of the fifth sensing signal; the arithmetic unit 800 is used to determine the magnetic field sensing signal of the magnetic field sensing device based on the value of the third sensing signal and the value of the sixth sensing signal.

[0202] In one specific embodiment, the arithmetic unit 800 is used to determine the magnetic field sensing signal of the magnetic field sensing device based on the sum of the values ​​of the second sensing signal and the fifth sensing signal, and the sum of the values ​​of the third sensing signal and the sixth sensing signal.

[0203] The magnetic field sensing signal includes differential sensing signals corresponding to the first region S1 and the second region S2, and / or includes common-mode sensing signals corresponding to the first region S1 and the second region S2.

[0204] For example, if the value of the fifth sensing signal is defined as V5, the value of the sixth sensing signal as V6, the value of the second intermediate output as Vo2 (Vo2 = V2 + V5), and the value of the third intermediate output as Vo3 (Vo3 = V3 + V6), then the value of the common-mode sensing signal Vcom satisfies:

[0205] Vo2+Vo3=V2+V5+V3+V6=2(Vsig1+Vsig2)=Vcom

[0206] The value Vdiff of the differential sensing signal satisfies:

[0207] Vo3-Vo2=(V3+V6)-(V2+V5)=2(Vsig2-Vsig1)=Vdiff

[0208] In one specific embodiment, the magnetic field sensing device includes a fourth magnetic field generating unit 41.

[0209] The fourth magnetic field generating unit 41 is used to apply a preset fourth excitation magnetic field Br4 to the fourth sensing unit 40. The direction and magnetic field strength of the fourth excitation magnetic field Br4 are preset and known.

[0210] The fourth magnetic field generating unit 41 can be configured as a coil, a magnet or other structure capable of generating a local magnetic field to apply a fourth excitation magnetic field Br4.

[0211] The fourth magnetic field generating unit 41 can be disposed close to the fourth sensing unit 40 to apply a fourth excitation magnetic field Br4 to the fourth sensing unit 40.

[0212] The fourth excitation magnetic field Br4 applied by the fourth magnetic field generating unit 41 has at least a magnetic field component along the sensing direction of the fourth sensing unit 40. For example, the fourth sensing unit 40 has a sensing direction along the first direction X or its opposite direction, and the fourth magnetic field generating unit 41 applies the fourth excitation magnetic field Br4 in the first direction X to the fourth sensing unit 40.

[0213] Correspondingly, the ambient magnetic field sensed by the fourth sensing unit 40 includes the fourth excitation magnetic field Br4.

[0214] In one specific embodiment, the fourth sensing unit 40 senses the ambient magnetic field, including a fourth excitation magnetic field Br4 and a second signal magnetic field corresponding to the second region S2.

[0215] In one specific embodiment, the fourth sensing signal includes information corresponding to the second signal magnetic field and information corresponding to the fourth excitation magnetic field Br4.

[0216] The fourth excitation magnetic field Br4 is in the opposite direction to the first excitation magnetic field Br1. In one specific embodiment, the fourth excitation magnetic field Br4 and the first excitation magnetic field Br1 have the same magnetic field strength.

[0217] Combination Figure 1 The arithmetic unit 800 is used to determine a calibration signal based on the value of the first sensing signal and the value of the fourth sensing signal; the arithmetic unit 800 is used to determine a calibration signal based on the value of the second sensing signal and the value of the fifth sensing signal; the arithmetic unit 800 is used to determine a calibration signal based on the value of the third sensing signal and the value of the sixth sensing signal.

[0218] In one specific embodiment, the arithmetic unit 800 is used to determine a calibration signal based on the difference between the value of the first sensing signal and the value of the fourth sensing signal, the sum of the values ​​of the second sensing signal and the fifth sensing signal, and the sum of the values ​​of the first sensing signal and the fourth sensing signal.

[0219] For example, if the value of the fourth excitation magnetic field is defined as Vbr4, and the first direction X is defined as the positive direction, and Vbr1 = Vbr4, then the value of the calibration signal Vref satisfies:

[0220] Vo3-Vo2+2Vo1

[0221] =(Vsig2+Vsig2)-(Vsig1+Vsig1)+2((Vsig1+Vbr1)-(Vsig2-Vbr4))

[0222] =-4Vbr1=Vref

[0223] Figure 11 The seventh embodiment of the present invention is shown, and the following description will elaborate on this seventh embodiment and its relation to the present invention. Figure 10 The differences between the sixth embodiment shown will not be repeated here, as will the similarities between the two.

[0224] The fourth excitation magnetic field Br4 has the same direction as the first excitation magnetic field Br1. In one specific embodiment, the magnetic field strength of the fourth excitation magnetic field Br4 is the same as that of the first excitation magnetic field Br1. In another specific embodiment, the fourth excitation magnetic field Br4 is the same as that of the first excitation magnetic field Br1.

[0225] Combination Figure 1 The arithmetic unit 800 is used to determine a calibration signal based on the value of the first sensing signal and the value of the fourth sensing signal; the arithmetic unit 800 is used to determine a calibration signal based on the value of the second sensing signal and the value of the fifth sensing signal; the arithmetic unit 800 is used to determine a calibration signal based on the value of the third sensing signal and the value of the sixth sensing signal.

[0226] The arithmetic unit 800 is used to determine a calibration signal based on the sum of the values ​​of the first sensing signal and the fourth sensing signal, the sum of the values ​​of the second sensing signal and the fifth sensing signal, and the sum of the values ​​of the first sensing signal and the fourth sensing signal.

[0227] For example, when the first direction X is defined as the positive direction and Vbr1 = Vbr4, the value of the calibration signal Vref satisfies:

[0228] Vo3-Vo2+2Vo1

[0229] =(Vsig2+Vsig2)-(Vsig1+Vsig1)+2((Vsig2-Vbr1)+(Vsig1-Vbr4))

[0230] =-4Vbr1=Vref

[0231] Figure 12 The eighth embodiment of the present invention is shown, and the following description will elaborate on this eighth embodiment and its relation to the present invention. Figure 10 The sixth embodiment shown Figure 11 The differences and similarities between the seventh embodiment shown will not be repeated here.

[0232] The magnetic field sensing device includes a second magnetic field generating unit 21.

[0233] The second magnetic field generating unit 21 is used to apply a preset second excitation magnetic field Br2 to the second sensing unit 20. The direction and magnetic field strength of the second excitation magnetic field Br2 are preset and known.

[0234] The second magnetic field generating unit 21 can be configured as a coil, a magnet, or other structure capable of generating a local magnetic field to apply a second excitation magnetic field Br2.

[0235] The second magnetic field generating unit 21 can be disposed close to the second sensing unit 20 to apply a second excitation magnetic field Br2 to the second sensing unit 20.

[0236] Correspondingly, the ambient magnetic field sensed by the second sensing unit 20 includes the second excitation magnetic field Br2.

[0237] In one specific embodiment, the second excitation magnetic field Br2 is in the opposite direction to the first excitation magnetic field Br1. Specifically, the second excitation magnetic field Br2 is in the opposite direction but has the same intensity as the first excitation magnetic field Br1.

[0238] The second magnetic field generating unit 21 can be as follows: Figure 6 The second embodiment shown is configured.

[0239] The magnetic field sensing device includes a third magnetic field generating unit 31.

[0240] The third magnetic field generating unit 31 is used to apply a preset third excitation magnetic field Br3 to the third sensing unit 30. The direction and magnetic field strength of the third excitation magnetic field Br3 are preset and known.

[0241] The third magnetic field generating unit 31 can be configured as a coil, a magnet, or other structure capable of generating a local magnetic field to apply a third excitation magnetic field Br3.

[0242] The third magnetic field generating unit 31 can be disposed close to the third sensing unit 30 to apply a third excitation magnetic field Br3 to the third sensing unit 30.

[0243] Correspondingly, the ambient magnetic field sensed by the third sensing unit 30 includes the third excitation magnetic field Br3.

[0244] In one specific embodiment, the third excitation magnetic field Br3 is in the opposite direction to the second excitation magnetic field Br2. Specifically, the third excitation magnetic field Br3 and the second excitation magnetic field Br2 are in opposite directions but have the same intensity.

[0245] In one specific embodiment, the third excitation magnetic field Br3 is in the same direction as the first excitation magnetic field Br1. Specifically, the third excitation magnetic field Br3 and the first excitation magnetic field Br1 are in the same direction and have the same intensity.

[0246] The third magnetic field generating unit 31 can be as follows: Figure 7 The third embodiment shown is configured.

[0247] The magnetic field sensing device includes a fourth magnetic field generating unit 41.

[0248] The fourth magnetic field generating unit 41 is used to apply a preset fourth excitation magnetic field Br4 to the fourth sensing unit 40. The direction and magnetic field strength of the fourth excitation magnetic field Br4 are preset and known.

[0249] The fourth magnetic field generating unit 41 can be configured as a coil, a magnet or other structure capable of generating a local magnetic field to apply a fourth excitation magnetic field Br4.

[0250] The fourth magnetic field generating unit 41 can be disposed close to the fourth sensing unit 40 to apply a fourth excitation magnetic field Br4 to the fourth sensing unit 40.

[0251] Correspondingly, the ambient magnetic field sensed by the fourth sensing unit 40 includes the fourth excitation magnetic field Br4.

[0252] In one specific embodiment, the fourth excitation magnetic field Br4 is in the opposite direction to the first excitation magnetic field Br1. Specifically, the fourth excitation magnetic field Br4 and the first excitation magnetic field Br1 are in opposite directions but have the same intensity.

[0253] The fourth magnetic field generating unit 41 can be as follows Figure 10 The sixth embodiment shown Figure 11 The seventh embodiment shown is configured as follows.

[0254] The magnetic field sensing device includes a fifth magnetic field generating unit 51.

[0255] The fifth magnetic field generating unit 51 is used to apply a preset fifth excitation magnetic field Br5 to the fifth sensing unit 50. The direction and magnetic field strength of the fifth excitation magnetic field Br5 are preset and known.

[0256] The fifth magnetic field generating unit 51 can be configured as a coil, a magnet or other structure capable of generating a local magnetic field to apply the fifth excitation magnetic field Br5.

[0257] The fifth magnetic field generating unit 51 can be disposed close to the fifth sensing unit 50 to apply a fifth excitation magnetic field Br5 to the fifth sensing unit 50.

[0258] The fifth excitation magnetic field Br5 applied by the fifth magnetic field generating unit 51 has at least a magnetic field component along the sensing direction of the fifth sensing unit 50. For example, the fifth sensing unit 50 has a sensing direction along a first direction X or its opposite direction, and the fifth magnetic field generating unit 51 applies the fifth excitation magnetic field Br5 in the first direction X to the fifth sensing unit 50.

[0259] Correspondingly, the ambient magnetic field sensed by the fifth sensing unit 50 includes the fifth excitation magnetic field Br5.

[0260] In one specific embodiment, the fifth sensing unit 50 senses the ambient magnetic field, including a fifth excitation magnetic field Br5 and a first signal magnetic field corresponding to the first region S1.

[0261] In one specific embodiment, the fifth sensing signal includes information corresponding to the first signal magnetic field and information corresponding to the fifth excitation magnetic field Br5.

[0262] In one specific embodiment, the fifth excitation magnetic field Br5 is in the opposite direction to the first excitation magnetic field Br1. Specifically, the magnetic field strength of the fifth excitation magnetic field Br5 is the same as that of the first excitation magnetic field Br1.

[0263] In one specific embodiment, the fifth excitation magnetic field Br5 has the same direction as the second excitation magnetic field Br2. Specifically, the magnetic field strength of the fifth excitation magnetic field Br5 is the same as that of the second excitation magnetic field Br2.

[0264] The magnetic field sensing device includes a sixth magnetic field generating unit 61.

[0265] The sixth magnetic field generating unit 61 is used to apply a preset sixth excitation magnetic field Br6 to the sixth sensing unit 60. The direction and magnetic field strength of the sixth excitation magnetic field Br6 are preset and known.

[0266] The sixth magnetic field generating unit 61 can be configured as a coil, a magnet or other structure capable of generating a local magnetic field to apply the sixth excitation magnetic field Br6.

[0267] The sixth magnetic field generating unit 61 can be positioned close to the sixth sensing unit 60 to apply a sixth excitation magnetic field Br6 to the sixth sensing unit 60.

[0268] The sixth excitation magnetic field Br6 applied by the sixth magnetic field generating unit 61 has at least a magnetic field component along the sensing direction of the sixth sensing unit 60. For example, the sixth sensing unit 60 has a sensing direction along the first direction X or its opposite direction, and the sixth magnetic field generating unit 61 applies a sixth excitation magnetic field Br6 in the opposite direction of the first direction X to the sixth sensing unit 60.

[0269] Correspondingly, the environmental magnetic field sensed by the sixth sensing unit 60 includes the sixth excitation magnetic field Br6.

[0270] In one specific embodiment, the sixth sensing unit 60 senses the ambient magnetic field, including a sixth excitation magnetic field Br6 and a second signal magnetic field corresponding to the second region S2.

[0271] In one specific embodiment, the sixth sensing signal includes information corresponding to the second signal magnetic field and information corresponding to the sixth excitation magnetic field Br6.

[0272] In one specific embodiment, the sixth excitation magnetic field Br6 has the same direction as the first excitation magnetic field Br1. Specifically, the magnetic field strength of the sixth excitation magnetic field Br6 is the same as that of the first excitation magnetic field Br1.

[0273] In one specific embodiment, the sixth excitation magnetic field Br6 has the same direction as the third excitation magnetic field Br3. Specifically, the magnetic field strength of the sixth excitation magnetic field Br6 is the same as that of the third excitation magnetic field Br3.

[0274] Combination Figure 1 The arithmetic unit 800 is used to determine the magnetic field sensing signal of the magnetic field sensing device based on the value of the second sensing signal and the value of the fifth sensing signal; the arithmetic unit 800 is used to determine the magnetic field sensing signal of the magnetic field sensing device based on the value of the third sensing signal and the value of the sixth sensing signal.

[0275] In one specific embodiment, the arithmetic unit 800 is used to determine the magnetic field sensing signal of the magnetic field sensing device based on the sum of the values ​​of the second sensing signal and the fifth sensing signal, and the sum of the values ​​of the third sensing signal and the sixth sensing signal.

[0276] The magnetic field sensing signal includes the common-mode sensing signal corresponding to the first region S1 and the second region S2.

[0277] For example, if the value of the fifth excitation magnetic field is defined as Vbr5 and the value of the sixth excitation magnetic field is defined as Vbr6, and the first direction X is defined as the positive direction, then when Vbr2 + Vbr5 = Vbr3 + Vbr6, the value of the common-mode sensing signal Vcom satisfies:

[0278] Vo2+Vo3=((Vsig1+Vbr2)+(Vsig1+Vbr5))+((Vsig2-Vbr3)+(Vsig2-Vbr6))

[0279] =2(Vsig1+Vsig2)=Vcom

[0280] Preferably, Vbr2 = Vbr3 = Vbr5 = Vbr6.

[0281] Combination Figure 1 The arithmetic unit 800 is used to determine the magnetic field sensing signal of the magnetic field sensing device based on the value of the second sensing signal and the value of the fifth sensing signal; the arithmetic unit 800 is used to determine the magnetic field sensing signal of the magnetic field sensing device based on the value of the third sensing signal and the value of the sixth sensing signal; the arithmetic unit 800 is used to determine the magnetic field sensing signal of the magnetic field sensing device based on the value of the first sensing signal and the value of the fourth sensing signal.

[0282] In one specific embodiment, the arithmetic unit 800 is used to determine the magnetic field sensing signal of the magnetic field sensing device based on the sum of the values ​​of the second sensing signal and the fifth sensing signal, the sum of the values ​​of the third sensing signal and the sixth sensing signal, and the difference between the values ​​of the first sensing signal and the fourth sensing signal.

[0283] The magnetic field sensing signal includes the differential sensing signal corresponding to the first region S1 and the second region S2.

[0284] For example, when the first direction X is defined as the positive direction, and Vbr3 + Vbr6 + Vbr2 + Vbr5 = 2Vbr4 + 2Vbr1, then the value Vdiff of the differential sensing signal satisfies:

[0285] Vo2-Vo3+2Vo1

[0286] =((Vsig1+Vbr2)+(Vsig1+Vbr5))-((Vsig2-Vbr3)+(Vsig2-Vbr6))+2((Vsig1-Vbr1)-(Vsig2+Vbr4))

[0287] =-4(Vsig2-Vsig1)=Vdiff

[0288] Preferably, Vbr1 = Vbr2 = Vbr3 = Vbr4 = Vbr5 = Vbr6.

[0289] Combination Figure 1 The arithmetic unit 800 is used to determine a calibration signal based on the values ​​of the second sensing signal and the fifth sensing signal; the arithmetic unit 800 is used to determine a calibration signal based on the values ​​of the third sensing signal and the sixth sensing signal; the arithmetic unit 800 is used to determine a calibration signal based on the values ​​of the first sensing signal and the fourth sensing signal.

[0290] In one specific embodiment, the arithmetic unit 800 is used to determine a calibration signal based on the sum of the values ​​of the second sensing signal and the fifth sensing signal, the sum of the values ​​of the third sensing signal and the sixth sensing signal, and the difference between the values ​​of the first sensing signal and the fourth sensing signal.

[0291] For example, when the first direction X is defined as the positive direction, and Vbr1 = Vbr2 = Vbr3 = Vbr4 = Vbr5 = Vbr6, then the calibration signal Vref satisfies:

[0292] Vo2-Vo3-2Vo1

[0293] =((Vsig1+Vbr2)+(Vsig1+Vbr5))-((Vsig2-Vbr3)+(Vsig2-Vbr6))-2((Vsig1-Vbr1)-(Vsig2+Vbr4))

[0294] =8Vbr1=Vref

[0295] In one specific embodiment, the magnetic field sensing device further includes an adder and / or a subtractor for performing the summation and difference operations described above. The adder and / or subtractor may be included in the arithmetic unit 800, which performs the above operations based on the adder and subtractor; the adder and / or subtractor may also be used to replace the arithmetic unit 800 to perform the above operations.

[0296] Specifically, the magnetic field sensing device includes a first adder, whose first input is coupled to a third intermediate output (e.g., coupled to a third sensing unit 30 and a sixth sensing unit 60), whose second input is coupled to a second intermediate output (e.g., coupled to a second sensing unit 20 and a fifth sensing unit 50), and whose output is used to generate a common-mode sensing signal.

[0297] The magnetic field sensing device includes a third amplifier 73 and a second amplifier 72. The first input terminal of the first adder is coupled to the output terminal of the third amplifier 73, and the second input terminal of the first adder is coupled to the output terminal of the second amplifier 72.

[0298] Specifically, the magnetic field sensing device includes a first subtractor and a second adder. The first input of the first subtractor is coupled to a third intermediate output (e.g., coupled to a third sensing unit 30 and a sixth sensing unit 60), and the second input of the first subtractor is coupled to a second intermediate output (e.g., coupled to a second sensing unit 20 and a fifth sensing unit 50). The first input of the second adder is coupled to the output of the first subtractor, and the second input of the second adder is coupled to a first intermediate output (e.g., coupled to a first sensing unit 10 and a fourth sensing unit 40). The output of the second adder is used to generate a differential sensing signal.

[0299] The magnetic field sensing device includes a third amplifier 73, a second amplifier 72, and a first amplifier 71. The first input terminal of the first subtractor is coupled to the output terminal of the third amplifier 73, the second input terminal of the first subtractor is coupled to the output terminal of the second amplifier 72, the first input terminal of the second adder is coupled to the output terminal of the first subtractor, and the second input terminal of the second adder is coupled to the output terminal of the first amplifier 71.

[0300] Specifically, the magnetic field sensing device includes a second subtractor, whose first input is coupled to the output of the first subtractor, whose second input is coupled to a first intermediate output (e.g., coupled to the first sensing unit 10 and the fourth sensing unit 40), and whose output is used to generate a calibration signal.

[0301] Figure 13 The ninth embodiment of the present invention is shown, and the following description will elaborate on this ninth embodiment and its relation to the present invention. Figure 12 The differences and similarities between the eighth embodiment shown will not be repeated here.

[0302] Figure 12 In the eighth embodiment shown, the sensing unit has a sensing direction along a first direction X or the opposite direction.

[0303] Specifically, the first sensing unit 10 has at least a sensing direction in the opposite direction to the first direction X; the second sensing unit 20 has at least a sensing direction in the first direction X; the third sensing unit 30 has at least a sensing direction in the opposite direction to the first direction X; the fourth sensing unit 40 has at least a sensing direction in the first direction X; the fifth sensing unit 50 has at least a sensing direction in the first direction X; and the sixth sensing unit 60 has at least a sensing direction in the opposite direction to the first direction X.

[0304] In other embodiments, the sensing unit has a sensing direction along a first direction X or the opposite direction.

[0305] In other embodiments, the sensing unit has a sensing direction parallel to the plane in which it is located. For example, the first sensing unit 10 has a sensing direction parallel to the plane in which it is located; the second sensing unit 20 has a sensing direction parallel to the plane in which it is located.

[0306] Figure 12 In the eighth embodiment shown, the sensing unit has a sensing direction perpendicular to its plane; the sensing unit has a sensing direction along a third direction Z or its opposite direction.

[0307] Specifically, the first sensing unit 10 has at least a sensing direction along the third direction Z; the second sensing unit 20 has at least a sensing direction in the opposite direction of the third direction Z; the third sensing unit 30 has at least a sensing direction along the third direction Z; the fourth sensing unit 40 has at least a sensing direction in the opposite direction of the third direction Z; the fifth sensing unit 50 has at least a sensing direction in the opposite direction of the third direction Z; and the sixth sensing unit 60 has at least a sensing direction along the third direction Z.

[0308] The first magnetic field generating unit 11 is used to apply a preset first excitation magnetic field Br1 to the first sensing unit 10. The first excitation magnetic field Br1 is along the third direction Z.

[0309] The second magnetic field generating unit 21 is used to apply a preset second excitation magnetic field Br2 to the second sensing unit 20. The second excitation magnetic field Br2 is in the opposite direction of the third direction Z.

[0310] The third magnetic field generating unit 31 is used to apply a preset third excitation magnetic field Br3 to the third sensing unit 30. The third excitation magnetic field Br3 is along the third direction Z.

[0311] The fourth magnetic field generating unit 41 is used to apply a preset fourth excitation magnetic field Br4 to the fourth sensing unit 40. The fourth excitation magnetic field Br4 is in the opposite direction of the third direction Z.

[0312] The fifth magnetic field generating unit 51 is used to apply a preset fifth excitation magnetic field Br5 to the fifth sensing unit 50. The fifth excitation magnetic field Br5 is in the opposite direction of the third direction Z.

[0313] The sixth magnetic field generating unit 61 is used to apply a preset sixth excitation magnetic field Br6 to the sixth sensing unit 60. The sixth excitation magnetic field Br6 is along the third direction Z.

[0314] Figure 14 The tenth embodiment of the present invention is shown below, and will be described in detail below. Figure 10 The sixth embodiment shown Figure 11 The differences and similarities between the seventh embodiment shown will not be repeated here.

[0315] The magnetic field sensing device includes a second magnetic field generating unit 21.

[0316] The second magnetic field generating unit 21 is used to apply a preset second excitation magnetic field Br2 to the second sensing unit 20. The direction and magnetic field strength of the second excitation magnetic field Br2 are preset and known.

[0317] The second magnetic field generating unit 21 can be configured as a coil, a magnet, or other structure capable of generating a local magnetic field to apply a second excitation magnetic field Br2.

[0318] The second magnetic field generating unit 21 can be disposed close to the second sensing unit 20 to apply a second excitation magnetic field Br2 to the second sensing unit 20.

[0319] Correspondingly, the ambient magnetic field sensed by the second sensing unit 20 includes the second excitation magnetic field Br2.

[0320] In one specific embodiment, the second excitation magnetic field Br2 is in the opposite direction to the first excitation magnetic field Br1. Specifically, the second excitation magnetic field Br2 is in the opposite direction but has the same intensity as the first excitation magnetic field Br1.

[0321] The second magnetic field generating unit 21 can be as follows: Figure 6 The second embodiment shown is configured.

[0322] The magnetic field sensing device includes a third magnetic field generating unit 31.

[0323] The third magnetic field generating unit 31 is used to apply a preset third excitation magnetic field Br3 to the third sensing unit 30. The direction and magnetic field strength of the third excitation magnetic field Br3 are preset and known.

[0324] The third magnetic field generating unit 31 can be configured as a coil, a magnet, or other structure capable of generating a local magnetic field to apply a third excitation magnetic field Br3.

[0325] The third magnetic field generating unit 31 can be disposed close to the third sensing unit 30 to apply a third excitation magnetic field Br3 to the third sensing unit 30.

[0326] Correspondingly, the ambient magnetic field sensed by the third sensing unit 30 includes the third excitation magnetic field Br3.

[0327] In one specific embodiment, the third excitation magnetic field Br3 is in the opposite direction to the second excitation magnetic field Br2. Specifically, the third excitation magnetic field Br3 and the second excitation magnetic field Br2 are in opposite directions but have the same intensity.

[0328] In one specific embodiment, the third excitation magnetic field Br3 is in the same direction as the first excitation magnetic field Br1. Specifically, the third excitation magnetic field Br3 and the first excitation magnetic field Br1 are in the same direction and have the same intensity.

[0329] The third magnetic field generating unit 31 can be as follows: Figure 7 The third embodiment shown is configured.

[0330] The magnetic field sensing device includes a fourth magnetic field generating unit 41.

[0331] The fourth magnetic field generating unit 41 is used to apply a preset fourth excitation magnetic field Br4 to the fourth sensing unit 40. The direction and magnetic field strength of the fourth excitation magnetic field Br4 are preset and known.

[0332] The fourth magnetic field generating unit 41 can be configured as a coil, a magnet or other structure capable of generating a local magnetic field to apply a fourth excitation magnetic field Br4.

[0333] The fourth magnetic field generating unit 41 can be disposed close to the fourth sensing unit 40 to apply a fourth excitation magnetic field Br4 to the fourth sensing unit 40.

[0334] Correspondingly, the ambient magnetic field sensed by the fourth sensing unit 40 includes the fourth excitation magnetic field Br4.

[0335] In one specific embodiment, the fourth excitation magnetic field Br4 is in the same direction as the first excitation magnetic field Br1. Specifically, the fourth excitation magnetic field Br4 and the first excitation magnetic field Br1 are in the same direction and have the same intensity.

[0336] The fourth magnetic field generating unit 41 can be as follows Figure 10 The sixth embodiment shown Figure 11 The seventh embodiment shown is configured as follows.

[0337] The magnetic field sensing device includes a fifth magnetic field generating unit 51.

[0338] The fifth magnetic field generating unit 51 is used to apply a preset fifth excitation magnetic field Br5 to the fifth sensing unit 50. The direction and magnetic field strength of the fifth excitation magnetic field Br5 are preset and known.

[0339] The fifth magnetic field generating unit 51 can be configured as a coil, a magnet or other structure capable of generating a local magnetic field to apply the fifth excitation magnetic field Br5.

[0340] The fifth magnetic field generating unit 51 can be disposed close to the fifth sensing unit 50 to apply a fifth excitation magnetic field Br5 to the fifth sensing unit 50.

[0341] Correspondingly, the ambient magnetic field sensed by the fifth sensing unit 50 includes the fifth excitation magnetic field Br5.

[0342] In one specific embodiment, the fifth excitation magnetic field Br5 has the same direction as the second excitation magnetic field Br2. Specifically, the magnetic field strength of the fifth excitation magnetic field Br5 is the same as that of the second excitation magnetic field Br2.

[0343] In one specific embodiment, the fifth excitation magnetic field Br5 is in the opposite direction to the first excitation magnetic field Br1. Specifically, the magnetic field strength of the fifth excitation magnetic field Br5 is the same as that of the first excitation magnetic field Br1.

[0344] The fifth magnetic field generating unit 51 can be as follows Figure 12 The eighth embodiment shown is configured.

[0345] The magnetic field sensing device includes a sixth magnetic field generating unit 61.

[0346] The sixth magnetic field generating unit 61 is used to apply a preset sixth excitation magnetic field Br6 to the sixth sensing unit 60. The direction and magnetic field strength of the sixth excitation magnetic field Br6 are preset and known.

[0347] The sixth magnetic field generating unit 61 can be configured as a coil, a magnet or other structure capable of generating a local magnetic field to apply the sixth excitation magnetic field Br6.

[0348] The sixth magnetic field generating unit 61 can be positioned close to the sixth sensing unit 60 to apply a sixth excitation magnetic field Br6 to the sixth sensing unit 60.

[0349] Correspondingly, the environmental magnetic field sensed by the sixth sensing unit 60 includes the sixth excitation magnetic field Br6.

[0350] In one specific embodiment, the sixth excitation magnetic field Br6 has the same direction as the third excitation magnetic field Br3. Specifically, the magnetic field strength of the sixth excitation magnetic field Br6 is the same as that of the third excitation magnetic field Br3.

[0351] In one specific embodiment, the sixth excitation magnetic field Br6 has the same direction as the first excitation magnetic field Br1. Specifically, the magnetic field strength of the sixth excitation magnetic field Br6 is the same as that of the first excitation magnetic field Br1.

[0352] The sixth magnetic field generating unit 61 can be as follows Figure 12 The eighth embodiment shown is configured.

[0353] Combination Figure 1 The arithmetic unit 800 is used to determine the magnetic field sensing signal of the magnetic field sensing device based on the value of the second sensing signal and the value of the fifth sensing signal; the arithmetic unit 800 is used to determine the magnetic field sensing signal of the magnetic field sensing device based on the value of the third sensing signal and the value of the sixth sensing signal.

[0354] In one specific embodiment, the arithmetic unit 800 is used to determine the magnetic field sensing signal of the magnetic field sensing device based on the sum of the values ​​of the second sensing signal and the fifth sensing signal, and the sum of the values ​​of the third sensing signal and the sixth sensing signal.

[0355] The magnetic field sensing signal includes the common-mode sensing signal corresponding to the first region S1 and the second region S2.

[0356] For example, when the first direction X is defined as the positive direction, and Vbr2 + Vbr5 = Vbr3 + Vbr6, then the value Vcom of the common-mode sensing signal satisfies:

[0357] Vo2+Vo3=((Vsig1+Vbr2)+(Vsig1+Vbr5))+((Vsig2-Vbr3)+(Vsig2-Vbr6))

[0358] =2(Vsig1+Vsig2)=Vcom

[0359] Preferably, Vbr2 = Vbr3 = Vbr5 = Vbr6.

[0360] Combination Figure 1 The arithmetic unit 800 is used to determine the magnetic field sensing signal of the magnetic field sensing device based on the value of the second sensing signal and the value of the fifth sensing signal; the arithmetic unit 800 is used to determine the magnetic field sensing signal of the magnetic field sensing device based on the sum of the value of the first sensing signal and the value of the fourth sensing signal.

[0361] In one specific embodiment, the arithmetic unit 800 is used to determine the magnetic field sensing signal of the magnetic field sensing device based on the sum of the values ​​of the second sensing signal and the fifth sensing signal, and the sum of the values ​​of the first sensing signal and the fourth sensing signal.

[0362] The magnetic field sensing signal includes the differential sensing signal corresponding to the first region S1 and the second region S2.

[0363] For example, when the first direction X is defined as the positive direction, and Vbr3 + Vbr6 = Vbr4 + Vbr1, then the value Vdiff of the differential sensing signal satisfies:

[0364] Vo3-Vo1=((Vsig2-Vbr3)+(Vsig2-Vbr6))-((Vsig2-Vbr4)+(Vsig1-Vbr1))

[0365] =Vsig2-Vsig1=Vdiff

[0366] Preferably, Vbr1 = Vbr3 = Vbr4 = Vbr6.

[0367] Combination Figure 1The arithmetic unit 800 is used to determine a calibration signal based on the values ​​of the second sensing signal and the fifth sensing signal; the arithmetic unit 800 is used to determine a calibration signal based on the values ​​of the third sensing signal and the sixth sensing signal; the arithmetic unit 800 is used to determine a calibration signal based on the values ​​of the first sensing signal and the fourth sensing signal.

[0368] In one specific embodiment, the arithmetic unit 800 is used to determine the calibration signal based on the sum of the values ​​of the second sensing signal and the fifth sensing signal, the sum of the values ​​of the third sensing signal and the sixth sensing signal, and the sum of the values ​​of the first sensing signal and the fourth sensing signal.

[0369] For example, when the first direction X is defined as the positive direction, and Vbr1 = Vbr2 = Vbr3 = Vbr4 = Vbr5 = Vbr6, then the calibration signal Vref satisfies:

[0370] Vo3+Vo2-2Vo1

[0371] =((Vsig2-Vbr3)+(Vsig2-Vbr6))+((Vsig1+Vbr2)+(Vsig1+Vbr5))-2((Vsig2-Vbr4)+(Vsig1-Vbr1))

[0372] =4Vbr1=Vref

[0373] Figure 15 The eleventh embodiment of the present invention is shown, and the following description will elaborate on this eleventh embodiment and its relation to the present invention. Figure 10 The sixth embodiment shown Figure 11 The differences and similarities between the seventh embodiment shown will not be repeated here.

[0374] The magnetic field sensing device includes a second magnetic field generating unit 21.

[0375] The second magnetic field generating unit 21 is used to apply a preset second excitation magnetic field Br2 to the second sensing unit 20. The direction and magnetic field strength of the second excitation magnetic field Br2 are preset and known.

[0376] The second magnetic field generating unit 21 can be configured as a coil, a magnet, or other structure capable of generating a local magnetic field to apply a second excitation magnetic field Br2.

[0377] The second magnetic field generating unit 21 can be disposed close to the second sensing unit 20 to apply a second excitation magnetic field Br2 to the second sensing unit 20.

[0378] Correspondingly, the ambient magnetic field sensed by the second sensing unit 20 includes the second excitation magnetic field Br2.

[0379] In one specific embodiment, the second excitation magnetic field Br2 is in the same direction as the first excitation magnetic field Br1. Specifically, the second excitation magnetic field Br2 is in the same direction and has the same intensity as the first excitation magnetic field Br1.

[0380] The second magnetic field generating unit 21 can be as follows: Figure 6 The second embodiment shown is configured.

[0381] The magnetic field sensing device includes a third magnetic field generating unit 31.

[0382] The third magnetic field generating unit 31 is used to apply a preset third excitation magnetic field Br3 to the third sensing unit 30. The direction and magnetic field strength of the third excitation magnetic field Br3 are preset and known.

[0383] The third magnetic field generating unit 31 can be configured as a coil, a magnet, or other structure capable of generating a local magnetic field to apply a third excitation magnetic field Br3.

[0384] The third magnetic field generating unit 31 can be disposed close to the third sensing unit 30 to apply a third excitation magnetic field Br3 to the third sensing unit 30.

[0385] Correspondingly, the ambient magnetic field sensed by the third sensing unit 30 includes the third excitation magnetic field Br3.

[0386] In one specific embodiment, the third excitation magnetic field Br3 is in the same direction as the second excitation magnetic field Br2. Specifically, the third excitation magnetic field Br3 and the second excitation magnetic field Br2 are in the same direction and have the same intensity.

[0387] In one specific embodiment, the third excitation magnetic field Br3 is in the same direction as the first excitation magnetic field Br1. Specifically, the third excitation magnetic field Br3 and the first excitation magnetic field Br1 are in the same direction and have the same intensity.

[0388] The third magnetic field generating unit 31 can be as follows: Figure 7 The third embodiment shown is configured.

[0389] The magnetic field sensing device includes a fifth magnetic field generating unit 51.

[0390] The fifth magnetic field generating unit 51 is used to apply a preset fifth excitation magnetic field Br5 to the fifth sensing unit 50. The direction and magnetic field strength of the fifth excitation magnetic field Br5 are preset and known.

[0391] The fifth magnetic field generating unit 51 can be configured as a coil, a magnet or other structure capable of generating a local magnetic field to apply the fifth excitation magnetic field Br5.

[0392] The fifth magnetic field generating unit 51 can be disposed close to the fifth sensing unit 50 to apply a fifth excitation magnetic field Br5 to the fifth sensing unit 50.

[0393] Correspondingly, the ambient magnetic field sensed by the fifth sensing unit 50 includes the fifth excitation magnetic field Br5.

[0394] In one specific embodiment, the fifth excitation magnetic field Br5 has the same direction as the second excitation magnetic field Br2. Specifically, the magnetic field strength of the fifth excitation magnetic field Br5 is the same as that of the second excitation magnetic field Br2.

[0395] In one specific embodiment, the fifth excitation magnetic field Br5 has the same direction as the first excitation magnetic field Br1. Specifically, the magnetic field strength of the fifth excitation magnetic field Br5 is the same as that of the first excitation magnetic field Br1.

[0396] The fifth magnetic field generating unit 51 can be as follows Figure 12 The eighth embodiment shown is configured.

[0397] The magnetic field sensing device includes a sixth magnetic field generating unit 61.

[0398] The sixth magnetic field generating unit 61 is used to apply a preset sixth excitation magnetic field Br6 to the sixth sensing unit 60. The direction and magnetic field strength of the sixth excitation magnetic field Br6 are preset and known.

[0399] The sixth magnetic field generating unit 61 can be configured as a coil, a magnet or other structure capable of generating a local magnetic field to apply the sixth excitation magnetic field Br6.

[0400] The sixth magnetic field generating unit 61 can be positioned close to the sixth sensing unit 60 to apply a sixth excitation magnetic field Br6 to the sixth sensing unit 60.

[0401] Correspondingly, the environmental magnetic field sensed by the sixth sensing unit 60 includes the sixth excitation magnetic field Br6.

[0402] In one specific embodiment, the sixth excitation magnetic field Br6 has the same direction as the third excitation magnetic field Br3. Specifically, the magnetic field strength of the sixth excitation magnetic field Br6 is the same as that of the third excitation magnetic field Br3.

[0403] In one specific embodiment, the sixth excitation magnetic field Br6 has the same direction as the first excitation magnetic field Br1. Specifically, the magnetic field strength of the sixth excitation magnetic field Br6 is the same as that of the first excitation magnetic field Br1.

[0404] The sixth magnetic field generating unit 61 can be as follows Figure 12 The eighth embodiment shown is configured.

[0405] Combination Figure 1The arithmetic unit 800 is used to determine the magnetic field sensing signal of the magnetic field sensing device based on the value of the second sensing signal and the value of the fifth sensing signal; the arithmetic unit 800 is used to determine the magnetic field sensing signal of the magnetic field sensing device based on the value of the third sensing signal and the value of the sixth sensing signal.

[0406] In one specific embodiment, the arithmetic unit 800 is used to determine the magnetic field sensing signal of the magnetic field sensing device based on the sum of the values ​​of the second sensing signal and the fifth sensing signal, and the sum of the values ​​of the third sensing signal and the sixth sensing signal.

[0407] The magnetic field sensing signal includes the differential sensing signal corresponding to the first region S1 and the second region S2.

[0408] For example, when the first direction X is defined as the positive direction, and Vbr3 + Vbr6 = Vbr2 + Vbr5, then the value Vdiff of the differential sensing signal satisfies:

[0409] Vo3-Vo2=((Vsig2-Vbr3)+(Vsig2-Vbr6))-((Vsig1-Vbr2)+(Vsig1-Vbr5))

[0410] =2(Vsig2-Vsig1)=Vdiff

[0411] Preferably, Vbr2 = Vbr3 = Vbr5 = Vbr6.

[0412] The magnetic field sensing device includes a fourth magnetic field generating unit 41.

[0413] The fourth magnetic field generating unit 41 is used to apply a preset fourth excitation magnetic field Br4 to the fourth sensing unit 40. The direction and magnetic field strength of the fourth excitation magnetic field Br4 are preset and known.

[0414] The fourth magnetic field generating unit 41 can be configured as a coil, a magnet or other structure capable of generating a local magnetic field to apply a fourth excitation magnetic field Br4.

[0415] The fourth magnetic field generating unit 41 can be disposed close to the fourth sensing unit 40 to apply a fourth excitation magnetic field Br4 to the fourth sensing unit 40.

[0416] Correspondingly, the ambient magnetic field sensed by the fourth sensing unit 40 includes the fourth excitation magnetic field Br4.

[0417] In one specific embodiment, the fourth excitation magnetic field Br4 is in the opposite direction to the first excitation magnetic field Br1. Specifically, the fourth excitation magnetic field Br4 and the first excitation magnetic field Br1 are in opposite directions but have the same intensity.

[0418] The fourth magnetic field generating unit 41 can be as follows Figure 10 The sixth embodiment shown Figure 11 The seventh embodiment shown is configured as follows.

[0419] Combination Figure 1 The arithmetic unit 800 is used to determine the magnetic field sensing signal of the magnetic field sensing device based on the value of the second sensing signal and the value of the fifth sensing signal; the arithmetic unit 800 is used to determine the magnetic field sensing signal of the magnetic field sensing device based on the value of the first sensing signal and the value of the fourth sensing signal.

[0420] In one specific embodiment, the arithmetic unit 800 is used to determine the magnetic field sensing signal of the magnetic field sensing device based on the sum of the values ​​of the second sensing signal and the fifth sensing signal, and the difference between the values ​​of the first sensing signal and the fourth sensing signal.

[0421] The magnetic field sensing signal includes the common-mode sensing signal corresponding to the first region S1 and the second region S2.

[0422] For example, when the first direction X is defined as the positive direction, and Vbr2 + Vbr5 = Vbr4 + Vbr1, then the value Vcom of the common-mode sensing signal satisfies:

[0423] Vo2-Vo1=((Vsig1-Vbr2)+(Vsig1-Vbr5))-((Vsig1-Vbr1)-(Vsig2+Vbr4))

[0424] =Vsig1+Vsig2=Vcom

[0425] Combination Figure 1 The arithmetic unit 800 is used to determine a calibration signal based on the values ​​of the second sensing signal and the fifth sensing signal; the arithmetic unit 800 is used to determine a calibration signal based on the values ​​of the third sensing signal and the sixth sensing signal; the arithmetic unit 800 is used to determine a calibration signal based on the values ​​of the first sensing signal and the fourth sensing signal.

[0426] In one specific embodiment, the arithmetic unit 800 is used to determine a calibration signal based on the sum of the values ​​of the second sensing signal and the fifth sensing signal, the sum of the values ​​of the third sensing signal and the sixth sensing signal, and the difference between the values ​​of the first sensing signal and the fourth sensing signal.

[0427] For example, when the first direction X is defined as the positive direction, and Vbr1 = Vbr2 = Vbr3 = Vbr4 = Vbr5 = Vbr6, then the calibration signal Vref satisfies:

[0428] Vo3-Vo2+2Vo1

[0429] =((Vsig2-Vbr3)+(Vsig2-Vbr6))-((Vsig1-Vbr2)+(Vsig1-Vbr5))+2((Vsig1-Vbr1)-(Vsig2+Vbr4))

[0430] =-4Vbr1=Vref

[0431] Figure 16 The twelfth embodiment of the present invention is shown, and the following description will elaborate on this twelfth embodiment and its relation to the present invention. Figure 15 The differences and similarities between the eleventh embodiment shown will not be repeated here.

[0432] In this twelfth embodiment, the second excitation magnetic field Br2 is in the opposite direction to the first excitation magnetic field Br1. Specifically, the second excitation magnetic field Br2 is in the opposite direction to the first excitation magnetic field Br1, but has the same intensity.

[0433] The third excitation magnetic field Br3 is in the same direction and has the same intensity as the second excitation magnetic field Br2. The third excitation magnetic field Br3 is in the opposite direction and has the same intensity as the first excitation magnetic field.

[0434] The fifth excitation magnetic field Br5 is in the same direction and has the same intensity as the second excitation magnetic field Br2. The fifth excitation magnetic field Br5 is in the opposite direction and has the same intensity as the first excitation magnetic field.

[0435] The sixth excitation magnetic field Br6 is in the same direction and has the same intensity as the second excitation magnetic field Br2. The sixth excitation magnetic field Br6 is in the opposite direction and has the same intensity as the first excitation magnetic field.

[0436] The fourth excitation magnetic field Br4 is in the same direction as the first excitation magnetic field Br1. Specifically, the fourth excitation magnetic field Br4 is in the same direction and has the same intensity as the first excitation magnetic field Br1.

[0437] Combination Figure 1 The arithmetic unit 800 is used to determine the magnetic field sensing signal of the magnetic field sensing device based on the value of the second sensing signal and the value of the fifth sensing signal; the arithmetic unit 800 is used to determine the magnetic field sensing signal of the magnetic field sensing device based on the value of the third sensing signal and the value of the sixth sensing signal; the arithmetic unit 800 is used to determine the magnetic field sensing signal of the magnetic field sensing device based on the value of the first sensing signal and the value of the fourth sensing signal.

[0438] In one specific embodiment, the arithmetic unit 800 is used to determine the magnetic field sensing signal of the magnetic field sensing device based on the sum of the values ​​of the second sensing signal and the fifth sensing signal, the sum of the values ​​of the third sensing signal and the sixth sensing signal, and the sum of the values ​​of the first sensing signal and the fourth sensing signal.

[0439] The magnetic field sensing signal includes the common-mode sensing signal corresponding to the first region S1 and the second region S2.

[0440] For example, when the first direction X is defined as the positive direction, and Vbr3 + Vbr6 + Vbr2 + Vbr5 = 2(Vbr1 + Vbr4), then the value Vcom of the common-mode sensing signal satisfies:

[0441] Vo3 + Vo2 + 2Vo1 =

[0442] ((Vsig2+Vbr3)+(Vsig2+Vbr6))+((Vsig1+Vbr2)+(Vsig1+Vbr5))+2((Vsig1-Vbr1)+(Vsig2-Vbr4))

[0443] =4(Vsig2+Vsig1)=Vcom

[0444] Combination Figure 1 The arithmetic unit 800 is used to determine a calibration signal based on the values ​​of the second sensing signal and the fifth sensing signal; the arithmetic unit 800 is used to determine a calibration signal based on the values ​​of the third sensing signal and the sixth sensing signal; the arithmetic unit 800 is used to determine a calibration signal based on the values ​​of the first sensing signal and the fourth sensing signal.

[0445] In one specific embodiment, the arithmetic unit 800 is used to determine a calibration signal based on the sum of the values ​​of the second sensing signal and the fifth sensing signal, the sum of the values ​​of the third sensing signal and the sixth sensing signal, and the sum of the values ​​of the first sensing signal and the fourth sensing signal.

[0446] For example, when the first direction X is defined as the positive direction, and Vbr1 = Vbr2 = Vbr3 = Vbr4 = Vbr5 = Vbr6, then the calibration signal Vref satisfies:

[0447] Vo3+Vo2-2Vo1

[0448] =((Vsig2+Vbr3)+(Vsig2+Vbr6))+((Vsig1+Vbr2)+(Vsig1+Vbr5))-2((Vsig1-Vbr1)-(Vsig2-Vbr4))

[0449] =8Vbr=Vref

[0450] Figure 17 The thirteenth embodiment of the present invention is shown below, and will be described in detail below. Figure 10 The sixth embodiment shown Figure 11 The differences and similarities between the seventh embodiment shown will not be repeated here.

[0451] The magnetic field sensing device includes a third magnetic field generating unit 31.

[0452] The third magnetic field generating unit 31 is used to apply a preset third excitation magnetic field Br3 to the third sensing unit 30. The direction and magnetic field strength of the third excitation magnetic field Br3 are preset and known.

[0453] The third magnetic field generating unit 31 can be configured as a coil, a magnet, or other structure capable of generating a local magnetic field to apply a third excitation magnetic field Br3.

[0454] The third magnetic field generating unit 31 can be disposed close to the third sensing unit 30 to apply a third excitation magnetic field Br3 to the third sensing unit 30.

[0455] Correspondingly, the ambient magnetic field sensed by the third sensing unit 30 includes the third excitation magnetic field Br3.

[0456] In one specific embodiment, the third excitation magnetic field Br3 is in the same direction as the first excitation magnetic field Br1. Specifically, the third excitation magnetic field Br3 and the first excitation magnetic field Br1 are in the same direction and have the same intensity.

[0457] The third magnetic field generating unit 31 can be as follows: Figure 7 The third embodiment shown is configured.

[0458] The magnetic field sensing device includes a sixth magnetic field generating unit 61.

[0459] The sixth magnetic field generating unit 61 is used to apply a preset sixth excitation magnetic field Br6 to the sixth sensing unit 60. The direction and magnetic field strength of the sixth excitation magnetic field Br6 are preset and known.

[0460] The sixth magnetic field generating unit 61 can be configured as a coil, a magnet or other structure capable of generating a local magnetic field to apply the sixth excitation magnetic field Br6.

[0461] The sixth magnetic field generating unit 61 can be positioned close to the sixth sensing unit 60 to apply a sixth excitation magnetic field Br6 to the sixth sensing unit 60.

[0462] Correspondingly, the environmental magnetic field sensed by the sixth sensing unit 60 includes the sixth excitation magnetic field Br6.

[0463] In one specific embodiment, the sixth excitation magnetic field Br6 has the same direction as the third excitation magnetic field Br3. Specifically, the magnetic field strength of the sixth excitation magnetic field Br6 is the same as that of the third excitation magnetic field Br3.

[0464] In one specific embodiment, the sixth excitation magnetic field Br6 has the same direction as the first excitation magnetic field Br1. Specifically, the magnetic field strength of the sixth excitation magnetic field Br6 is the same as that of the first excitation magnetic field Br1.

[0465] The sixth magnetic field generating unit 61 can be as follows Figure 12 The eighth embodiment shown is configured.

[0466] Combination Figure 1 The arithmetic unit 800 is used to determine the magnetic field sensing signal of the magnetic field sensing device based on the value of the second sensing signal and the value of the fifth sensing signal; the arithmetic unit 800 is used to determine the magnetic field sensing signal of the magnetic field sensing device based on the value of the third sensing signal and the value of the sixth sensing signal; the arithmetic unit 800 is used to determine the magnetic field sensing signal of the magnetic field sensing device based on the value of the first sensing signal and the value of the fourth sensing signal.

[0467] In one specific embodiment, the arithmetic unit 800 is used to determine the magnetic field sensing signal of the magnetic field sensing device based on the sum of the values ​​of the second sensing signal and the fifth sensing signal, the sum of the values ​​of the third sensing signal and the sixth sensing signal, and the difference between the values ​​of the first sensing signal and the fourth sensing signal.

[0468] The magnetic field sensing signal includes the differential sensing signal corresponding to the first region S1 and the second region S2.

[0469] For example, when the first direction X is defined as the positive direction, and Vbr3 + Vbr6 = 2Vbr1, then the value Vdiff of the differential sensing signal satisfies:

[0470] Vo3 - Vo2 - 0.5 * (Vo3 - Vo2 + 2Vo1)

[0471] =((Vsig2-Vbr3)+(Vsig2-Vbr6))-(Vsig1+Vsig1)-0.5*(((Vsig2-Vbr3)+(Vsig2-Vbr6))-(Vsig1+Vsig1)+2((Vsig1-Vbr1)-Vsig2))

[0472] =2(Vsig2-Vsig1)=Vdiff

[0473] Preferably, Vbr1 = Vbr3 = Vbr6.

[0474] The magnetic field sensing signal includes the common-mode sensing signal corresponding to the first region S1 and the second region S2.

[0475] For example, when the first direction X is defined as the positive direction, and Vbr3 + Vbr6 = 2Vbr1, then the value Vcom of the common-mode sensing signal satisfies:

[0476] Vo3 + Vo2 - 0.5 * (Vo3 - Vo2 + 2Vo1)

[0477] =((Vsig2-Vbr3)+(Vsig2-Vbr6))+(Vsig1+Vsig1)-0.5*(((Vsig2-Vbr3)+(Vsig2-Vbr6))-(Vsig1+Vsig1)+2((Vsig1-Vbr1)-Vsig2))

[0478] =2(Vsig2+Vsig1)=Vcom

[0479] Preferably, Vbr1 = Vbr3 = Vbr6.

[0480] Combination Figure 1 The arithmetic unit 800 is used to determine a calibration signal based on the values ​​of the second sensing signal and the fifth sensing signal; the arithmetic unit 800 is used to determine a calibration signal based on the values ​​of the third sensing signal and the sixth sensing signal; the arithmetic unit 800 is used to determine a calibration signal based on the values ​​of the first sensing signal and the fourth sensing signal.

[0481] In one specific embodiment, the arithmetic unit 800 is used to determine a calibration signal based on the sum of the values ​​of the second sensing signal and the fifth sensing signal, the sum of the values ​​of the third sensing signal and the sixth sensing signal, and the difference between the values ​​of the first sensing signal and the fourth sensing signal.

[0482] For example, when the first direction X is defined as the positive direction, and Vbr1 = Vbr3 = Vbr6, then the calibration signal Vref satisfies:

[0483] Vo3-Vo2+2Vo1

[0484] =((Vsig2-Vbr3)+(Vsig2-Vbr6))-(Vsig1+Vsig1)+2((Vsig1-Vbr1)-Vsig2)

[0485] =-4Vbr1=Vref

[0486] Figure 18 The fourteenth embodiment of the present invention is shown, and the following description will elaborate on this fourteenth embodiment and its relation to the present invention. Figure 9 The differences between the fifth embodiment shown will not be repeated here, as will the similarities between the two.

[0487] The magnetic field sensing device includes a second magnetic field generating unit 21.

[0488] The second magnetic field generating unit 21 is used to apply a preset second excitation magnetic field Br2 to the second sensing unit 20. The direction and magnetic field strength of the second excitation magnetic field Br2 are preset and known.

[0489] The second magnetic field generating unit 21 can be configured as a coil, a magnet, or other structure capable of generating a local magnetic field to apply a second excitation magnetic field Br2.

[0490] The second magnetic field generating unit 21 can be disposed close to the second sensing unit 20 to apply a second excitation magnetic field Br2 to the second sensing unit 20.

[0491] Correspondingly, the ambient magnetic field sensed by the second sensing unit 20 includes the second excitation magnetic field Br2.

[0492] In one specific embodiment, the second excitation magnetic field Br2 is in the opposite direction to the first excitation magnetic field Br1. Specifically, the second excitation magnetic field Br2 is in the opposite direction but has the same intensity as the first excitation magnetic field Br1.

[0493] The second magnetic field generating unit 21 can be as follows: Figure 6 The second embodiment shown is configured.

[0494] The magnetic field sensing device includes a third magnetic field generating unit 31.

[0495] The third magnetic field generating unit 31 is used to apply a preset third excitation magnetic field Br3 to the third sensing unit 30. The direction and magnetic field strength of the third excitation magnetic field Br3 are preset and known.

[0496] The third magnetic field generating unit 31 can be configured as a coil, a magnet, or other structure capable of generating a local magnetic field to apply a third excitation magnetic field Br3.

[0497] The third magnetic field generating unit 31 can be disposed close to the third sensing unit 30 to apply a third excitation magnetic field Br3 to the third sensing unit 30.

[0498] Correspondingly, the ambient magnetic field sensed by the third sensing unit 30 includes the third excitation magnetic field Br3.

[0499] In one specific embodiment, the third excitation magnetic field Br3 is in the opposite direction to the second excitation magnetic field Br2. Specifically, the third excitation magnetic field Br3 and the second excitation magnetic field Br2 are in opposite directions but have the same intensity.

[0500] In one specific embodiment, the third excitation magnetic field Br3 is in the same direction as the first excitation magnetic field Br1. Specifically, the third excitation magnetic field Br3 and the first excitation magnetic field Br1 are in the same direction and have the same intensity.

[0501] The third magnetic field generating unit 31 can be as follows: Figure 7 The third embodiment shown is configured.

[0502] In one specific embodiment, the magnetic field sensing device includes a second amplifier 72, the input of which is coupled to a second sensing unit 20 and a third sensing unit 30, and the output of which is used to generate a second intermediate output.

[0503] The magnetic field sensing device includes a fifth sensing unit 50.

[0504] The fifth sensing unit 50 is disposed in the first region S1.

[0505] The fifth sensing unit 50 is used to sense the ambient magnetic field to generate a fifth sensing signal.

[0506] The fifth sensing unit 50 senses the overall environmental magnetic field of the environment in which the magnetic field sensing device is located, or the magnetic field component of the overall environmental magnetic field at the first region S1.

[0507] The fifth sensing unit 50 can be as follows Figure 10 The sixth embodiment shown is configured as follows.

[0508] The magnetic field sensing device includes a sixth sensing unit 60.

[0509] The sixth sensing unit 60 is located in the second region S2.

[0510] The sixth sensing unit 60 is used to sense the ambient magnetic field to generate a sixth sensing signal.

[0511] The sixth sensing unit 60 senses the overall environmental magnetic field of the environment in which the magnetic field sensing device is located, or the magnetic field component of the overall environmental magnetic field at the second region S2.

[0512] The sixth sensing unit 60 can be as follows Figure 10 The sixth embodiment shown is configured as follows.

[0513] The magnetic field sensing device includes a fifth magnetic field generating unit 51.

[0514] The fifth magnetic field generating unit 51 is used to apply a preset fifth excitation magnetic field Br5 to the fifth sensing unit 50. The direction and magnetic field strength of the fifth excitation magnetic field Br5 are preset and known.

[0515] The fifth magnetic field generating unit 51 can be configured as a coil, a magnet or other structure capable of generating a local magnetic field to apply the fifth excitation magnetic field Br5.

[0516] The fifth magnetic field generating unit 51 can be disposed close to the fifth sensing unit 50 to apply a fifth excitation magnetic field Br5 to the fifth sensing unit 50.

[0517] Correspondingly, the ambient magnetic field sensed by the fifth sensing unit 50 includes the fifth excitation magnetic field Br5.

[0518] In one specific embodiment, the fifth excitation magnetic field Br5 has the same direction as the second excitation magnetic field Br2. Specifically, the magnetic field strength of the fifth excitation magnetic field Br5 is the same as that of the second excitation magnetic field Br2.

[0519] In one specific embodiment, the fifth excitation magnetic field Br5 is in the opposite direction to the first excitation magnetic field Br1. Specifically, the magnetic field strength of the fifth excitation magnetic field Br5 is the same as that of the first excitation magnetic field Br1.

[0520] The fifth magnetic field generating unit 51 can be as follows Figure 12 The eighth embodiment shown is configured.

[0521] The magnetic field sensing device includes a sixth magnetic field generating unit 61.

[0522] The sixth magnetic field generating unit 61 is used to apply a preset sixth excitation magnetic field Br6 to the sixth sensing unit 60. The direction and magnetic field strength of the sixth excitation magnetic field Br6 are preset and known.

[0523] The sixth magnetic field generating unit 61 can be configured as a coil, a magnet or other structure capable of generating a local magnetic field to apply the sixth excitation magnetic field Br6.

[0524] The sixth magnetic field generating unit 61 can be positioned close to the sixth sensing unit 60 to apply a sixth excitation magnetic field Br6 to the sixth sensing unit 60.

[0525] Correspondingly, the environmental magnetic field sensed by the sixth sensing unit 60 includes the sixth excitation magnetic field Br6.

[0526] In one specific embodiment, the sixth excitation magnetic field Br6 has the same direction as the third excitation magnetic field Br3. Specifically, the magnetic field strength of the sixth excitation magnetic field Br6 is the same as that of the third excitation magnetic field Br3.

[0527] In one specific embodiment, the sixth excitation magnetic field Br6 has the same direction as the first excitation magnetic field Br1. Specifically, the magnetic field strength of the sixth excitation magnetic field Br6 is the same as that of the first excitation magnetic field Br1.

[0528] The sixth magnetic field generating unit 61 can be as follows Figure 12 The eighth embodiment shown is configured.

[0529] In one specific embodiment, the magnetic field sensing device includes a third amplifier 73, the input of which is coupled to a fifth sensing unit 50 and a sixth sensing unit 60, and the output of which is used to generate a third intermediate output.

[0530] In one specific embodiment, the magnetic field sensing device includes a first amplifier 71, the input terminal of the first amplifier 71 is coupled to a first sensing unit 10 and a fourth sensing unit 40, and the output terminal of the first amplifier 71 is used to generate a first intermediate output.

[0531] Combination Figure 1 The arithmetic unit 800 is used to determine the magnetic field sensing signal of the magnetic field sensing device based on the value of the third sensing signal and the value of the second sensing signal; the arithmetic unit 800 is used to determine the magnetic field sensing signal of the magnetic field sensing device based on the value of the sixth sensing signal and the value of the fifth sensing signal; the arithmetic unit 800 is used to determine the magnetic field sensing signal of the magnetic field sensing device based on the value of the first sensing signal and the value of the fourth sensing signal.

[0532] In one specific embodiment, the arithmetic unit 800 is used to determine the magnetic field sensing signal of the magnetic field sensing device based on the difference between the value of the third sensing signal and the value of the second sensing signal, the difference between the value of the sixth sensing signal and the value of the fifth sensing signal, and the difference between the value of the first sensing signal and the value of the fourth sensing signal.

[0533] The magnetic field sensing signal includes the differential sensing signal corresponding to the first region S1 and the second region S2.

[0534] For example, when the first direction X is defined as the positive direction, and Vbr3 + Vbr2 + Vbr6 + Vbr5 = 4Vbr1, then the value Vdiff of the differential sensing signal satisfies:

[0535] Vo2+Vo3-4Vo1

[0536] =((Vsig2-Vbr3)-(Vsig1+Vbr2))+((Vsig2-Vbr6)-(Vsig1+Vbr5))-4((Vsig1-Vbr1)-Vsig2)

[0537] =6(Vsig2-Vsig1)=Vdiff

[0538] Preferably, Vbr1 = Vbr2 = Vbr3 = Vbr5 = Vbr6.

[0539] Combination Figure 1 The arithmetic unit 800 is used to determine a calibration signal based on the value of the third sensing signal and the value of the second sensing signal; the arithmetic unit 800 is used to determine a calibration signal based on the value of the sixth sensing signal and the value of the fifth sensing signal; the arithmetic unit 800 is used to determine a calibration signal based on the value of the first sensing signal and the value of the fourth sensing signal.

[0540] In one specific embodiment, the arithmetic unit 800 is used to determine a calibration signal based on the difference between the value of the third sensing signal and the value of the second sensing signal, the difference between the value of the sixth sensing signal and the value of the fifth sensing signal, and the difference between the value of the first sensing signal and the value of the fourth sensing signal.

[0541] For example, when the first direction X is defined as the positive direction, and Vbr1 = Vbr2 = Vbr3 = Vbr5 = Vbr6, then the value of the calibration signal Vref satisfies:

[0542] Vo2+Vo3+2Vo1

[0543] =((Vsig2-Vbr3)-(Vsig1+Vbr2))+((Vsig2-Vbr6)-(Vsig1+Vbr5))+2((Vsig1-Vbr1)-Vsig2)

[0544] =-6Vbr1=Vref

[0545] In one specific embodiment, the magnetic field sensing device includes a fourth magnetic field generating unit 41.

[0546] The fourth magnetic field generating unit 41 is used to apply a preset fourth excitation magnetic field Br4 to the fourth sensing unit 40. The direction and magnetic field strength of the fourth excitation magnetic field Br4 are preset and known.

[0547] The fourth magnetic field generating unit 41 can be configured as a coil, a magnet or other structure capable of generating a local magnetic field to apply a fourth excitation magnetic field Br4.

[0548] The fourth magnetic field generating unit 41 can be disposed close to the fourth sensing unit 40 to apply a fourth excitation magnetic field Br4 to the fourth sensing unit 40.

[0549] Correspondingly, the ambient magnetic field sensed by the fourth sensing unit 40 includes the fourth excitation magnetic field Br4.

[0550] In one specific embodiment, the fourth excitation magnetic field Br4 is in the opposite direction to the first excitation magnetic field Br1. Specifically, the fourth excitation magnetic field Br4 and the first excitation magnetic field Br1 are in opposite directions but have the same intensity.

[0551] The fourth magnetic field generating unit 41 can be as follows Figure 10 The sixth embodiment shown Figure 11 The seventh embodiment shown is configured as follows.

[0552] In this embodiment, the magnetic field sensing signal includes a differential sensing signal corresponding to the first region S1 and the second region S2.

[0553] For example, when the first direction X is defined as the positive direction, and Vbr3 + Vbr2 + Vbr6 + Vbr5 = 2(Vbr1 + Vbr4), then the value Vdiff of the differential sensing signal satisfies:

[0554] Vo2+Vo3-2Vo1

[0555] =((Vsig2-Vbr3)-(Vsig1+Vbr2))+((Vsig2-Vbr6)-(Vsig1+Vbr5))-2((Vsig1-Vbr1)-(Vsig2+Vbr4))

[0556] =4(Vsig2-Vsig1)=Vdiff

[0557] Preferably, Vbr1 = Vbr2 = Vbr3 = Vbr4 = Vbr5 = Vbr6.

[0558] For the calibration signal, for example, when the first direction X is defined as the positive direction, and Vbr1 = Vbr2 = Vbr3 = Vbr4 = Vbr5 = Vbr6, then the value Vref of the calibration signal satisfies:

[0559] Vo2+Vo3+2Vo1

[0560] =((Vsig2-Vbr3)-(Vsig1+Vbr2))+((Vsig2-Vbr6)-(Vsig1+Vbr5))+2((Vsig1-Vbr1)-(Vsig2+Vbr4))

[0561] =-8Vbr1=Vref

[0562] Figure 19 The fifteenth embodiment of the present invention is shown, and the following description will elaborate on this fifteenth embodiment and its relation to the present invention. Figure 18 The differences and similarities between the fourteenth embodiment shown will not be repeated here.

[0563] The magnetic field sensing device includes a first amplifier 71, the input of which is coupled to a first sensing unit 10, and the output of which is used to generate a first sensing signal.

[0564] The magnetic field sensing device includes a second amplifier 72, the input of which is coupled to a second sensing unit 20, and the output of which is used to generate a second sensing signal.

[0565] The magnetic field sensing device includes a third amplifier 73, the input of which is coupled to a third sensing unit 30, and the output of which is used to generate a third sensing signal.

[0566] The magnetic field sensing device includes a fourth amplifier 74, the input of which is coupled to a fourth sensing unit 40, and the output of which is used to generate a fourth sensing signal.

[0567] The magnetic field sensing device includes a fifth amplifier 75, the input of which is coupled to a fifth sensing unit 50. The magnetic field sensing device also includes a sixth amplifier 76, the input of which is coupled to a sixth sensing unit 60. The output of the sixth amplifier 76 is used to generate a sixth sensing signal.

[0568] The magnetic field sensing device includes a fourth magnetic field generating unit 41.

[0569] The fourth magnetic field generating unit 41 is used to apply a preset fourth excitation magnetic field Br4 to the fourth sensing unit 40. The direction and magnetic field strength of the fourth excitation magnetic field Br4 are preset and known.

[0570] The fourth magnetic field generating unit 41 can be configured as a coil, a magnet or other structure capable of generating a local magnetic field to apply a fourth excitation magnetic field Br4.

[0571] The fourth magnetic field generating unit 41 can be disposed close to the fourth sensing unit 40 to apply a fourth excitation magnetic field Br4 to the fourth sensing unit 40.

[0572] Correspondingly, the ambient magnetic field sensed by the fourth sensing unit 40 includes the fourth excitation magnetic field Br4.

[0573] In one specific embodiment, the fourth excitation magnetic field Br4 is in the opposite direction to the first excitation magnetic field Br1. Specifically, the fourth excitation magnetic field Br4 and the first excitation magnetic field Br1 are in opposite directions but have the same intensity.

[0574] In one specific embodiment, the fourth excitation magnetic field Br4 is in the same direction as the first excitation magnetic field Br1. Specifically, the fourth excitation magnetic field Br4 and the first excitation magnetic field Br1 are in the same direction and have the same intensity.

[0575] The fourth magnetic field generating unit 41 can be as follows Figure 10 The sixth embodiment shown Figure 11 The seventh embodiment shown is configured as follows.

[0576] Figure 20 The sixteenth embodiment of the present invention is shown, and the following description will elaborate on this sixteenth embodiment and its relation to the present invention. Figure 5 The differences between the first embodiment shown and the similarities between the two will not be repeated here.

[0577] The magnetic field sensing device includes a fifth sensing unit 50.

[0578] The fifth sensing unit 50 is disposed in the first region S1.

[0579] The fifth sensing unit 50 is used to sense the ambient magnetic field to generate a fifth sensing signal.

[0580] The fifth sensing unit 50 senses the overall environmental magnetic field of the environment in which the magnetic field sensing device is located, or the magnetic field component of the overall environmental magnetic field at the first region S1.

[0581] The fifth sensing unit 50 can be as follows Figure 10 The sixth embodiment shown is configured as follows.

[0582] The magnetic field sensing device includes a sixth sensing unit 60.

[0583] The sixth sensing unit 60 is located in the second region S2.

[0584] The sixth sensing unit 60 is used to sense the ambient magnetic field to generate a sixth sensing signal.

[0585] The sixth sensing unit 60 senses the overall environmental magnetic field of the environment in which the magnetic field sensing device is located, or the magnetic field component of the overall environmental magnetic field at the second region S2.

[0586] The sixth sensing unit 60 can be as follows Figure 10 The sixth embodiment shown is configured as follows.

[0587] In one specific embodiment, the magnetic field sensing device includes a first amplifier 71, the input terminal of the first amplifier 71 is coupled to a first sensing unit 10, and the output terminal of the first amplifier 71 is used to generate a first sensing signal.

[0588] In one specific embodiment, the magnetic field sensing device includes a second amplifier 72, the input of which is coupled to a second sensing unit 20 and a fifth sensing unit 50, and the output of which is used to generate a second intermediate output.

[0589] In one specific embodiment, the magnetic field sensing device includes a third amplifier 72, the input terminal of the third amplifier 73 is coupled to a third sensing unit 30 and a sixth sensing unit 60, and the output terminal of the third amplifier 73 is used to generate a third intermediate output.

[0590] Combination Figure 1 The arithmetic unit 800 is used to determine the magnetic field sensing signal of the magnetic field sensing device based on the value of the second sensing signal and the value of the fifth sensing signal; the arithmetic unit 800 is used to determine the magnetic field sensing signal of the magnetic field sensing device based on the value of the third sensing signal and the value of the sixth sensing signal.

[0591] In one specific embodiment, the arithmetic unit 800 is used to determine the magnetic field sensing signal of the magnetic field sensing device based on the sum of the values ​​of the second sensing signal and the fifth sensing signal, and the sum of the values ​​of the third sensing signal and the sixth sensing signal.

[0592] The magnetic field sensing signal includes the differential sensing signal corresponding to the first region S1 and the second region S2.

[0593] For example, when the first direction X is defined as the positive direction, the value Vdiff of the differential sensing signal satisfies:

[0594] Vo3-Vo2=(Vsig2+Vsig2)-(Vsig1+Vsig1)=2(Vsig2-Vsig1)=Vdiff

[0595] The magnetic field sensing signal includes the common-mode sensing signal corresponding to the first region S1 and the second region S2.

[0596] For example, when the first direction X is defined as the positive direction, the value Vcom of the common-mode sensing signal satisfies:

[0597] Vo3+Vo2=(Vsig2+Vsig2)+(Vsig1+Vsig1)=2(Vsig2+Vsig1)=Vcom

[0598] Combination Figure 1 The arithmetic unit 800 is used to determine a calibration signal based on the value of the second sensing signal and the value of the fifth sensing signal; the arithmetic unit 800 is used to determine a calibration signal based on the value of the first sensing signal.

[0599] In one specific embodiment, the arithmetic unit 800 is used to determine a calibration signal based on the sum of the values ​​of the second sensing signal and the fifth sensing signal, and the value of the first sensing signal.

[0600] For example, when the first direction X is defined as the positive direction, the value Vref of the calibration signal satisfies:

[0601] Vo2-2V1=(Vsig1+Vsig1)-2(Vsig1-Vbr1)=-2Vbr1=Vref

[0602] The magnetic field sensing device includes a second magnetic field generating unit 21.

[0603] The second magnetic field generating unit 21 is used to apply a preset second excitation magnetic field Br2 to the second sensing unit 20. The direction and magnetic field strength of the second excitation magnetic field Br2 are preset and known.

[0604] The second magnetic field generating unit 21 can be configured as a coil, a magnet, or other structure capable of generating a local magnetic field to apply a second excitation magnetic field Br2.

[0605] The second magnetic field generating unit 21 can be disposed close to the second sensing unit 20 to apply a second excitation magnetic field Br2 to the second sensing unit 20.

[0606] Correspondingly, the ambient magnetic field sensed by the second sensing unit 20 includes the second excitation magnetic field Br2.

[0607] The second excitation magnetic field Br2 is in the opposite direction to the first excitation magnetic field Br1. Specifically, the second excitation magnetic field Br2 is in the opposite direction to the first excitation magnetic field Br1, but has the same intensity.

[0608] The second magnetic field generating unit 21 can be as follows: Figure 6 The second embodiment shown is configured.

[0609] The magnetic field sensing device includes a fifth magnetic field generating unit 51.

[0610] The fifth magnetic field generating unit 51 is used to apply a preset fifth excitation magnetic field Br5 to the fifth sensing unit 50. The direction and magnetic field strength of the fifth excitation magnetic field Br5 are preset and known.

[0611] The fifth magnetic field generating unit 51 can be configured as a coil, a magnet or other structure capable of generating a local magnetic field to apply the fifth excitation magnetic field Br5.

[0612] The fifth magnetic field generating unit 51 can be disposed close to the fifth sensing unit 50 to apply a fifth excitation magnetic field Br5 to the fifth sensing unit 50.

[0613] Correspondingly, the ambient magnetic field sensed by the fifth sensing unit 50 includes the fifth excitation magnetic field Br5.

[0614] The fifth excitation magnetic field Br5 has the same direction as the second excitation magnetic field Br2. Specifically, the magnetic field strength of the fifth excitation magnetic field Br5 is the same as that of the second excitation magnetic field Br2.

[0615] The fifth excitation magnetic field Br5 is in the opposite direction to the first excitation magnetic field Br1. Specifically, the magnetic field strength of the fifth excitation magnetic field Br5 is the same as that of the first excitation magnetic field Br1.

[0616] The fifth magnetic field generating unit 51 can be as follows Figure 12 The eighth embodiment shown is configured.

[0617] The magnetic field sensing device includes a third magnetic field generating unit 31.

[0618] The third magnetic field generating unit 31 is used to apply a preset third excitation magnetic field Br3 to the third sensing unit 30. The direction and magnetic field strength of the third excitation magnetic field Br3 are preset and known.

[0619] The third magnetic field generating unit 31 can be configured as a coil, a magnet, or other structure capable of generating a local magnetic field to apply a third excitation magnetic field Br3.

[0620] The third magnetic field generating unit 31 can be disposed close to the third sensing unit 30 to apply a third excitation magnetic field Br3 to the third sensing unit 30.

[0621] In one specific embodiment, the third excitation magnetic field Br3 is in the opposite direction to the first excitation magnetic field Br1. Specifically, the third excitation magnetic field Br3 is in the opposite direction but has the same intensity as the first excitation magnetic field Br1.

[0622] In one specific embodiment, the third excitation magnetic field Br3 is in the same direction as the second excitation magnetic field Br2. Specifically, the third excitation magnetic field Br3 and the second excitation magnetic field Br2 are in the same direction and have the same intensity.

[0623] The third magnetic field generating unit 31 can be as follows: Figure 7 The third embodiment shown is configured.

[0624] The magnetic field sensing device includes a sixth magnetic field generating unit 61.

[0625] The sixth magnetic field generating unit 61 is used to apply a preset sixth excitation magnetic field Br6 to the sixth sensing unit 60. The direction and magnetic field strength of the sixth excitation magnetic field Br6 are preset and known.

[0626] The sixth magnetic field generating unit 61 can be configured as a coil, a magnet or other structure capable of generating a local magnetic field to apply the sixth excitation magnetic field Br6.

[0627] The sixth magnetic field generating unit 61 can be positioned close to the sixth sensing unit 60 to apply a sixth excitation magnetic field Br6 to the sixth sensing unit 60.

[0628] Correspondingly, the environmental magnetic field sensed by the sixth sensing unit 60 includes the sixth excitation magnetic field Br6.

[0629] In one specific embodiment, the sixth excitation magnetic field Br6 has the same direction as the third excitation magnetic field Br3. Specifically, the magnetic field strength of the sixth excitation magnetic field Br6 is the same as that of the third excitation magnetic field Br3.

[0630] In one specific embodiment, the sixth excitation magnetic field Br6 is in the opposite direction to the first excitation magnetic field Br1. Specifically, the magnetic field strength of the sixth excitation magnetic field Br6 is the same as that of the first excitation magnetic field Br1.

[0631] The sixth magnetic field generating unit 61 can be as follows Figure 12 The eighth embodiment shown is configured.

[0632] Combination Figure 1 The arithmetic unit 800 is used to determine the magnetic field sensing signal of the magnetic field sensing device based on the value of the second sensing signal and the value of the fifth sensing signal; the arithmetic unit 800 is used to determine the magnetic field sensing signal of the magnetic field sensing device based on the value of the third sensing signal and the value of the sixth sensing signal.

[0633] In one specific embodiment, the arithmetic unit 800 is used to determine the magnetic field sensing signal of the magnetic field sensing device based on the sum of the values ​​of the second sensing signal and the fifth sensing signal, and the sum of the values ​​of the third sensing signal and the sixth sensing signal.

[0634] The magnetic field sensing signal includes the differential sensing signal corresponding to the first region S1 and the second region S2.

[0635] For example, when the first direction X is defined as the positive direction, and Vbr3 + Vbr6 = Vbr2 + Vbr5, then the value Vdiff of the differential sensing signal satisfies:

[0636] Vo3-Vo2

[0637] =((Vsig2+Vbr3)+(Vsig2+Vbr6))-((Vsig1+Vbr2)+(Vsig1+Vbr5))

[0638] =2(Vsig2-Vsig1)=Vdiff

[0639] Preferably, Vbr3 = Vbr6 = Vbr2 = Vbr5.

[0640] Combination Figure 1 The arithmetic unit 800 is used to determine a calibration signal based on the value of the second sensing signal and the value of the fifth sensing signal; the arithmetic unit 800 is used to determine a calibration signal based on the value of the first sensing signal.

[0641] In one specific embodiment, the arithmetic unit 800 is used to determine a calibration signal based on the sum of the values ​​of the second sensing signal and the fifth sensing signal, and the value of the first sensing signal.

[0642] For example, when the first direction X is defined as the positive direction, and Vbr2 = Vbr5 = Vbr1, then the value of the calibration signal Vref satisfies:

[0643] Vo2-2V1=((Vsig1+Vbr2)+(Vsig1+Vbr5))-2(Vsig1-Vbr1)=4Vbr1=Vref

[0644] Combination Figure 1 The arithmetic unit 800 is used to determine the magnetic field sensing signal of the magnetic field sensing device based on the value of the third sensing signal and the value of the sixth sensing signal; the arithmetic unit 800 is used to determine the magnetic field sensing signal of the magnetic field sensing device based on the value of the first sensing signal.

[0645] In one specific embodiment, the arithmetic unit 800 is used to determine the magnetic field sensing signal of the magnetic field sensing device based on the sum of the values ​​of the third sensing signal and the sixth sensing signal, and the value of the first sensing signal.

[0646] The magnetic field sensing signal includes the common-mode sensing signal corresponding to the first region S1 and the second region S2.

[0647] For example, when the first direction X is defined as the positive direction, and Vbr3 + Vbr6 = 2Vbr1, then the value Vcom of the common-mode sensing signal satisfies:

[0648] Vo3+2V1

[0649] =((Vsig2+Vbr3)+(Vsig2+Vbr6))+2(Vsig1-Vbr1)

[0650] =2(Vsig2+Vsig1)=Vcom

[0651] Preferably, Vbr3 = Vbr6 = Vbr1.

[0652] Figure 21 The seventeenth embodiment of the present invention is shown, and the following description will elaborate on this seventeenth embodiment and its relation to the present invention. Figure 20 The differences between the sixteenth embodiment shown will not be repeated here, as will the similarities between the two.

[0653] The second excitation magnetic field Br2 is in the opposite direction to the first excitation magnetic field Br1. Specifically, the second excitation magnetic field Br2 is in the opposite direction to the first excitation magnetic field Br1, but has the same intensity.

[0654] The fifth excitation magnetic field Br5 has the same direction as the second excitation magnetic field Br2. Specifically, the magnetic field strength of the fifth excitation magnetic field Br5 is the same as that of the second excitation magnetic field Br2. The fifth excitation magnetic field Br5 has the opposite direction to the first excitation magnetic field Br1. Specifically, the magnetic field strength of the fifth excitation magnetic field Br5 is the same as that of the first excitation magnetic field Br1.

[0655] In one specific embodiment, the third excitation magnetic field Br3 is in the same direction as the first excitation magnetic field Br1. Specifically, the third excitation magnetic field Br3 and the first excitation magnetic field Br1 are in the same direction and have the same intensity. The third excitation magnetic field Br3 is in the opposite direction to the second excitation magnetic field Br2. Specifically, the third excitation magnetic field Br3 and the second excitation magnetic field Br2 are in the opposite direction and have the same intensity.

[0656] The sixth excitation magnetic field Br6 has the same direction as the third excitation magnetic field Br3. Specifically, the magnetic field strength of the sixth excitation magnetic field Br6 is the same as that of the third excitation magnetic field Br3. In a specific embodiment, the sixth excitation magnetic field Br6 has the same direction as the first excitation magnetic field Br1. Specifically, the magnetic field strength of the sixth excitation magnetic field Br6 is the same as that of the first excitation magnetic field Br1.

[0657] In one specific embodiment, the arithmetic unit 800 is used to determine the magnetic field sensing signal of the magnetic field sensing device based on the sum of the values ​​of the second sensing signal and the fifth sensing signal, and the sum of the values ​​of the third sensing signal and the sixth sensing signal.

[0658] The magnetic field sensing signal includes the common-mode sensing signal corresponding to the first region S1 and the second region S2.

[0659] For example, when the first direction X is defined as the positive direction, and Vbr3 + Vbr6 = Vbr2 + Vbr5, then the value Vcom of the common-mode sensing signal satisfies:

[0660] Vo3+Vo2

[0661] =((Vsig2-Vbr3)+(Vsig2-Vbr6))+((Vsig1+Vbr2)+(Vsig1+Vbr5))

[0662] =2(Vsig2+Vsig1)=Vcom

[0663] Preferably, Vbr3 = Vbr6 = Vbr2 = Vbr5.

[0664] In one specific embodiment, the arithmetic unit 800 is used to determine the magnetic field sensing signal of the magnetic field sensing device based on the sum of the values ​​of the third sensing signal and the sixth sensing signal, and the value of the first sensing signal.

[0665] The magnetic field sensing signal includes the differential sensing signal corresponding to the first region S1 and the second region S2.

[0666] For example, when the first direction X is defined as the positive direction, and Vbr3 + Vbr6 = 2Vbr1, then the value Vdiff of the differential sensing signal satisfies:

[0667] Vo3-2V1

[0668] =((Vsig2-Vbr3)+(Vsig2-Vbr6))-2(Vsig1-Vbr1)

[0669] =2(Vsig2-Vsig1)=Vdiff

[0670] Preferably, Vbr3 = Vbr6 = Vbr1.

[0671] Figure 22 The eighteenth embodiment of the present invention is shown, and the following description will elaborate on this eighteenth embodiment and its relation to the present invention. Figure 5 The differences between the first embodiment shown and the similarities between the two will not be repeated here.

[0672] The magnetic field sensing device includes a fourth sensing unit 40.

[0673] The fourth sensing unit 40 can be as follows Figure 9 The fifth embodiment shown is configured.

[0674] The fourth sensing unit 40 is disposed in the first region S1. The fourth sensing unit 40 may be disposed in the same position as the first sensing unit 10, or it may be disposed in the first region S1 at a position close to the first sensing unit 10.

[0675] The fourth sensing unit 40 is used to sense the ambient magnetic field to generate a fourth sensing signal.

[0676] The fourth sensing unit 40 senses the overall environmental magnetic field of the environment in which the magnetic field sensing device is located, or the magnetic field component of the overall magnetic field environment at the first region S1.

[0677] Combination Figure 1 The arithmetic unit 800 is used to determine a calibration signal based on the value of the first sensing signal and the value of the fourth sensing signal; the arithmetic unit 800 is used to determine a calibration signal based on the value of the second sensing signal.

[0678] In one specific embodiment, the arithmetic unit 800 is used to determine a calibration signal based on the sum of the values ​​of the first sensing signal and the fourth sensing signal, and the value of the second sensing signal.

[0679] For example, when the first direction X is defined as the positive direction, the value Vref of the calibration signal satisfies:

[0680] Vo1-2V2=(V1+V4)-2V2=((Vsig1-Vbr1)+Vsig1)-2Vsig1=-Vbr1=Vref

[0681] The magnetic field sensing device includes a fourth magnetic field generating unit 41.

[0682] The fourth magnetic field generating unit 41 is used to apply a preset fourth excitation magnetic field Br4 to the fourth sensing unit 40. The direction and magnetic field strength of the fourth excitation magnetic field Br4 are preset and known.

[0683] The fourth magnetic field generating unit 41 can be configured as a coil, a magnet or other structure capable of generating a local magnetic field to apply a fourth excitation magnetic field Br4.

[0684] The fourth magnetic field generating unit 41 can be disposed close to the fourth sensing unit 40 to apply a fourth excitation magnetic field Br4 to the fourth sensing unit 40.

[0685] Correspondingly, the ambient magnetic field sensed by the fourth sensing unit 40 includes the fourth excitation magnetic field Br4.

[0686] In one specific embodiment, the fourth excitation magnetic field Br4 is in the same direction as the first excitation magnetic field Br1. Specifically, the fourth excitation magnetic field Br4 and the first excitation magnetic field Br1 are in the same direction and have the same intensity.

[0687] The fourth magnetic field generating unit 41 can be as follows Figure 10 The sixth embodiment shown Figure 11 The seventh embodiment shown is configured as follows.

[0688] In one specific embodiment, the arithmetic unit 800 is used to determine a calibration signal based on the sum of the values ​​of the first sensing signal and the fourth sensing signal, and the value of the second sensing signal.

[0689] For example, when the first direction X is defined as the positive direction and Vbr1 = Vbr4, the value of the calibration signal Vref satisfies:

[0690] Vo1-2V2=(V1+V4)-2V2

[0691] =((Vsig1-Vbr1)+(Vsig1-Vbr4))-2Vsig1=-2Vbr1=Vref

[0692] The magnetic field sensing device includes a fifth sensing unit 50.

[0693] The fifth sensing unit 50 is disposed in the first region S1.

[0694] The fifth sensing unit 50 is used to sense the ambient magnetic field to generate a fifth sensing signal.

[0695] The fifth sensing unit 50 senses the overall environmental magnetic field of the environment in which the magnetic field sensing device is located, or the magnetic field component of the overall environmental magnetic field at the first region S1.

[0696] The fifth sensing unit 50 can be as follows Figure 10The sixth embodiment shown is configured as follows.

[0697] The magnetic field sensing device includes a sixth sensing unit 60.

[0698] The sixth sensing unit 60 is located in the second region S2.

[0699] The sixth sensing unit 60 is used to sense the ambient magnetic field to generate a sixth sensing signal.

[0700] The sixth sensing unit 60 senses the overall environmental magnetic field of the environment in which the magnetic field sensing device is located, or the magnetic field component of the overall environmental magnetic field at the second region S2.

[0701] The sixth sensing unit 60 can be as follows Figure 10 The sixth embodiment shown is configured as follows.

[0702] Combination Figure 1 The arithmetic unit 800 is used to determine the magnetic field sensing signal of the magnetic field sensing device based on the value of the second sensing signal and the value of the fifth sensing signal; the arithmetic unit 800 is used to determine the magnetic field sensing signal of the magnetic field sensing device based on the value of the third sensing signal and the value of the sixth sensing signal.

[0703] In one specific embodiment, the arithmetic unit 800 is used to determine the magnetic field sensing signal of the magnetic field sensing device based on the sum of the values ​​of the second sensing signal and the fifth sensing signal, and the sum of the values ​​of the third sensing signal and the sixth sensing signal.

[0704] The magnetic field sensing signal includes differential sensing signals corresponding to the first region S1 and the second region S2, and / or includes common-mode sensing signals corresponding to the first region S1 and the second region S2.

[0705] For example, the value Vcom of the common-mode sensing signal satisfies:

[0706] Vo2+Vo3=V2+V5+V3+V6=2(Vsig1+Vsig2)=Vcom

[0707] The value Vdiff of the differential sensing signal satisfies:

[0708] Vo3-Vo2=(V3+V6)-(V2+V5)=2(Vsig2-Vsig1)=Vdiff

[0709] The magnetic field sensing device also includes a first amplifier 71. The input of the first amplifier 71 is coupled to the first sensing unit 10 and the fourth sensing unit 40, and the output of the first amplifier 71 is used to generate a first intermediate output.

[0710] The magnetic field sensing device also includes a second amplifier 72, the input of which is coupled to the second sensing unit 20 and the fifth sensing unit 50, and the output of which is used to generate a second intermediate output.

[0711] The magnetic field sensing device also includes a third amplifier 73, the input of which is coupled to a third sensing unit 30 and a sixth sensing unit 60, and the output of which is used to generate a third intermediate output.

[0712] Figure 23 The nineteenth embodiment of the present invention is shown, and the following description will elaborate on this nineteenth embodiment and its relation to the present invention. Figure 1 The differences between the technical solutions shown will not be elaborated upon here, and their similarities will not be repeated.

[0713] The magnetic field sensing device includes a third sensing unit 30.

[0714] The third sensing unit 30 is disposed in the second region S2. The second region S2 is different from the first region S1.

[0715] The third sensing unit 30 is used to sense the ambient magnetic field to generate a third sensing signal.

[0716] The third sensing unit 30 senses the overall environmental magnetic field of the environment in which the magnetic field sensing device is located, or the magnetic field component of the overall environmental magnetic field at the second region S2.

[0717] The third sensing unit 30 can be as follows: Figure 5 The first embodiment shown is configured.

[0718] The magnetic field sensing device includes a third magnetic field generating unit 31.

[0719] The third magnetic field generating unit 31 is used to apply a preset third excitation magnetic field Br3 to the third sensing unit 30. The direction and magnetic field strength of the third excitation magnetic field Br3 are preset and known.

[0720] The third magnetic field generating unit 31 can be configured as a coil, a magnet, or other structure capable of generating a local magnetic field to apply a third excitation magnetic field Br3.

[0721] The third magnetic field generating unit 31 can be disposed close to the third sensing unit 30 to apply a third excitation magnetic field Br3 to the third sensing unit 30.

[0722] Correspondingly, the ambient magnetic field sensed by the third sensing unit 30 includes the third excitation magnetic field Br3.

[0723] In one specific embodiment, the third excitation magnetic field Br3 is in the opposite direction to the first excitation magnetic field Br1. Specifically, the third excitation magnetic field Br3 is in the opposite direction but has the same intensity as the first excitation magnetic field Br1.

[0724] The third magnetic field generating unit 31 can be as follows: Figure 7 The third embodiment shown is configured.

[0725] The magnetic field sensing device includes a fifth sensing unit 50.

[0726] The fifth sensing unit 50 is located in the second region S2.

[0727] The fifth sensing unit 50 is used to sense the ambient magnetic field to generate a fifth sensing signal.

[0728] The fifth sensing unit 50 senses the overall environmental magnetic field of the environment in which the magnetic field sensing device is located, or the magnetic field component of the overall environmental magnetic field at the second region S2.

[0729] The fifth sensing unit 50 can be as follows Figure 10 The sixth embodiment shown is configured as follows.

[0730] The magnetic field sensing device includes a second amplifier 72, the input of which is coupled to a second sensing unit 20 and a fifth sensing unit 50, and the output of which is used to generate a second intermediate output.

[0731] Combination Figure 1 The arithmetic unit 800 is used to determine a calibration signal based on the value of the first sensing signal; the arithmetic unit 800 is used to determine a calibration signal based on the value of the third sensing signal; the arithmetic unit 800 is used to determine a calibration signal based on the value of the fifth sensing signal and the value of the second sensing signal.

[0732] In one specific embodiment, the arithmetic unit 800 is used to determine a calibration signal based on the value of the first sensing signal, the value of the third sensing signal, the value of the fifth sensing signal, and the difference between the value of the second sensing signal.

[0733] For example, when the first direction X is defined as the positive direction and Vbr3 = Vbr1, the value of the calibration signal Vref satisfies:

[0734] V3-V1-Vo2=(Vsig2+Vbr3)-(Vsig1-Vbr1)-(Vsig2-Vsig1)=2Vbr1=Vref

[0735] Combination Figure 1 The arithmetic unit 800 is used to determine the magnetic field sensing signal of the magnetic field sensing device based on the value of the fifth sensing signal and the value of the second sensing signal.

[0736] In one specific embodiment, the arithmetic unit 800 is used to determine the magnetic field sensing signal of the magnetic field sensing device based on the difference between the value of the fifth sensing signal and the value of the second sensing signal.

[0737] The magnetic field sensing signal includes the differential sensing signal corresponding to the first region S1 and the second region S2.

[0738] For example, when the first direction X is defined as the positive direction, the value Vdiff of the differential sensing signal satisfies:

[0739] Vo2=V5-V2=Vsig2-Vsig1=Vdiff

[0740] Combination Figure 1 The arithmetic unit 800 is used to determine the magnetic field sensing signal of the magnetic field sensing device based on the value of the first sensing signal and the value of the third sensing signal.

[0741] In one specific embodiment, the arithmetic unit 800 is used to determine the magnetic field sensing signal of the magnetic field sensing device based on the sum of the values ​​of the first sensing signal and the third sensing signal.

[0742] The magnetic field sensing signal includes the common-mode sensing signal corresponding to the first region S1 and the second region S2.

[0743] For example, when the first direction X is defined as the positive direction and Vbr1 = Vbr3, the value Vcom of the common-mode sensing signal satisfies:

[0744] V1+V3=(Vsig1-Vbr1)+(Vsig2+Vbr3)=Vsig1+Vsig2=Vcom

[0745] In one specific embodiment, the magnetic field sensing device includes a fourth sensing unit 40.

[0746] The fourth sensing unit 40 can be as follows Figure 9 The fifth embodiment shown is configured.

[0747] The fourth sensing unit 40 is disposed in the first region S1. The fourth sensing unit 40 may be disposed in the same position as the first sensing unit 10, or it may be disposed in the first region S1 at a position close to the first sensing unit 10.

[0748] The fourth sensing unit 40 is used to sense the ambient magnetic field to generate a fourth sensing signal.

[0749] The fourth sensing unit 40 senses the overall environmental magnetic field of the environment in which the magnetic field sensing device is located, or the magnetic field component of the overall magnetic field environment at the second region S2.

[0750] The magnetic field sensing device also includes a first amplifier 71. The input of the first amplifier 71 is coupled to the first sensing unit 10 and the fourth sensing unit 40, and the output of the first amplifier 71 is used to generate a first intermediate output.

[0751] In one specific embodiment, the magnetic field sensing device includes a sixth sensing unit 60.

[0752] The sixth sensing unit 60 is located in the second region S2.

[0753] The sixth sensing unit 60 is used to sense the ambient magnetic field to generate a sixth sensing signal.

[0754] The sixth sensing unit 60 senses the overall environmental magnetic field of the environment in which the magnetic field sensing device is located, or the magnetic field component of the overall environmental magnetic field at the second region S2.

[0755] The sixth sensing unit 60 can be as follows Figure 10 The sixth embodiment shown is configured as follows.

[0756] The magnetic field sensing device also includes a third amplifier 73, the input of which is coupled to a third sensing unit 30 and a sixth sensing unit 60, and the output of which is used to generate a third intermediate output.

[0757] Combination Figure 1 The arithmetic unit 800 is used to determine the magnetic field sensing signal of the magnetic field sensing device based on the values ​​of the first sensing signal and the fourth sensing signal, and the values ​​of the third sensing signal and the sixth sensing signal.

[0758] In one specific embodiment, the arithmetic unit 800 is used to determine the magnetic field sensing signal of the magnetic field sensing device based on the sum of the values ​​of the first sensing signal and the fourth sensing signal, and the sum of the values ​​of the third sensing signal and the sixth sensing signal.

[0759] For example, when the first direction X is defined as the positive direction and Vbr1 = Vbr3, the value Vcom of the common-mode sensing signal satisfies:

[0760] Vo1 + Vo3 = V1 + V4 + V3 + V6

[0761] =((Vsig1-Vbr1)+Vsig1)+((Vsig2+Vbr3)+Vsig2)=2(Vsig1+Vsig2)=Vcom

[0762] Combination Figure 1The arithmetic unit 800 is used to determine a calibration signal based on the value of the first sensing signal and the value of the fourth sensing signal; the arithmetic unit 800 is used to determine a calibration signal based on the value of the third sensing signal and the value of the sixth sensing signal; the arithmetic unit 800 is used to determine a calibration signal based on the value of the fifth sensing signal and the value of the second sensing signal.

[0763] In one specific embodiment, the arithmetic unit 800 is used to determine a calibration signal based on the sum of the values ​​of the first sensing signal and the fourth sensing signal, the sum of the values ​​of the third sensing signal and the sixth sensing signal, and the difference between the values ​​of the fifth sensing signal and the second sensing signal.

[0764] For example, when the first direction X is defined as the positive direction and Vbr3 = Vbr1, the value of the calibration signal Vref satisfies:

[0765] Vo3-Vo1-2Vo2=(V3+V6)-(V1+V4)-2(V5-V2)

[0766] =((Vsig2+Vbr3)+Vsig2)-((Vsig1-Vbr1)+Vsig1)-2(Vsig2-Vsig1)

[0767] =2Vbr1=Vref

[0768] In one specific embodiment, the magnetic field sensing device includes a fourth magnetic field generating unit 41.

[0769] The fourth magnetic field generating unit 41 is used to apply a preset fourth excitation magnetic field Br4 to the fourth sensing unit 40. The direction and magnetic field strength of the fourth excitation magnetic field Br4 are preset and known.

[0770] The fourth magnetic field generating unit 41 can be configured as a coil, a magnet or other structure capable of generating a local magnetic field to apply a fourth excitation magnetic field Br4.

[0771] The fourth magnetic field generating unit 41 can be disposed close to the fourth sensing unit 40 to apply a fourth excitation magnetic field Br4 to the fourth sensing unit 40.

[0772] Correspondingly, the ambient magnetic field sensed by the fourth sensing unit 40 includes the fourth excitation magnetic field Br4.

[0773] In one specific embodiment, the fourth excitation magnetic field Br4 is in the same direction as the first excitation magnetic field Br1. Specifically, the fourth excitation magnetic field Br4 and the first excitation magnetic field Br1 are in the same direction and have the same intensity.

[0774] The fourth magnetic field generating unit 41 can be as follows Figure 10 The sixth embodiment shown Figure 11The seventh embodiment shown is configured as follows.

[0775] In one specific embodiment, the magnetic field sensing device includes a sixth magnetic field generating unit 61.

[0776] The sixth magnetic field generating unit 61 is used to apply a preset sixth excitation magnetic field Br6 to the sixth sensing unit 60. The direction and magnetic field strength of the sixth excitation magnetic field Br6 are preset and known.

[0777] The sixth magnetic field generating unit 61 can be configured as a coil, a magnet or other structure capable of generating a local magnetic field to apply the sixth excitation magnetic field Br6.

[0778] The sixth magnetic field generating unit 61 can be positioned close to the sixth sensing unit 60 to apply a sixth excitation magnetic field Br6 to the sixth sensing unit 60.

[0779] Correspondingly, the environmental magnetic field sensed by the sixth sensing unit 60 includes the sixth excitation magnetic field Br6.

[0780] In one specific embodiment, the sixth excitation magnetic field Br6 has the same direction as the third excitation magnetic field Br3. Specifically, the magnetic field strength of the sixth excitation magnetic field Br6 is the same as that of the third excitation magnetic field Br3.

[0781] In one specific embodiment, the sixth excitation magnetic field Br6 is in the opposite direction to the first excitation magnetic field Br1. Specifically, the magnetic field strength of the sixth excitation magnetic field Br6 is the same as that of the first excitation magnetic field Br1.

[0782] The sixth magnetic field generating unit 61 can be as follows Figure 12 The eighth embodiment shown is configured.

[0783] In one specific embodiment, the arithmetic unit 800 is used to determine the magnetic field sensing signal of the magnetic field sensing device based on the sum of the values ​​of the first sensing signal and the fourth sensing signal, and the sum of the values ​​of the third sensing signal and the sixth sensing signal.

[0784] For example, when the first direction X is defined as the positive direction, and Vbr1 + Vbr4 = Vbr3 + Vbr6, then the value Vcom of the common-mode sensing signal satisfies:

[0785] Vo1+Vo3

[0786] =((Vsig1-Vbr1)+(Vsig1-Vbr4)+((Vsig2+Vbr3)+(Vsig2+Vbr6))

[0787] =2(Vsig1+Vsig2)=Vcom

[0788] Preferably, Vbr1 = Vbr4 = Vbr3 = Vbr6.

[0789] In one specific embodiment, the arithmetic unit 800 is used to determine a calibration signal based on the sum of the values ​​of the first sensing signal and the fourth sensing signal, the sum of the values ​​of the third sensing signal and the sixth sensing signal, and the difference between the values ​​of the fifth sensing signal and the second sensing signal.

[0790] For example, when the first direction X is defined as the positive direction, and Vbr3 = Vbr1 = Vbr6 = Vbr4, then the value of the calibration signal Vref satisfies:

[0791] Vo3-Vo1-2Vo2

[0792] =((Vsig2+Vbr3)+(Vsig2+Vbr6))-((Vsig1-Vbr1)+(Vsig1-Vbr4))-2(Vsig2-Vsig1)

[0793] =4Vbr1=Vref

[0794] Figure 24 The structure of a sensing unit according to one embodiment of the present invention is shown. This structure can be applied to a first sensing unit 10 and / or a second sensing unit 20. This structure can also be applied to other sensing units involved in this application.

[0795] For ease of description, the following description will focus on sensing unit 100. Sensing unit 100 may be a first sensing unit 10, a second sensing unit 20, or other sensing units in this application.

[0796] like Figure 24 (a) The sensing unit 100 includes a first magnetoresistive resistor R1.

[0797] The sensing unit 100 includes a second magnetoresistive resistor R2.

[0798] In one embodiment, the first end of the first magnetoresistor R1 is coupled to the power supply terminal Vd; the first end of the second magnetoresistor R2 is coupled to the second end of the first magnetoresistor R1; and the second end of the second magnetoresistor R2 is coupled to the ground terminal GND.

[0799] In one embodiment, the sensing signal corresponding to the sensing unit 100 is related to the voltage value Vout1 at the second terminal of the first magnetoresistive R1.

[0800] In one embodiment, the sensing signal is related to the voltage value Vout1 at the first terminal of the second magnetoresistive R2.

[0801] In one embodiment, an output node is included between the second end of the first magnetoresistor R1 and the first end of the second magnetoresistor R2, and the output node is used to output the sensing signal.

[0802] In this way, the sensing unit can be constructed in the form of a half-bridge structure through magnetoresistive coupling.

[0803] Magnetoresistance can exhibit a positive magnetoresistance effect (+ΔR) or a negative magnetoresistance effect (-ΔR). When a magnetoresistance exhibits a positive magnetoresistance effect (+ΔR), its resistance increases with increasing magnetic field strength and decreases with decreasing magnetic field strength. When a magnetoresistance exhibits a negative magnetoresistance effect (-ΔR), its resistance increases with decreasing magnetic field strength and decreases with increasing magnetic field strength.

[0804] In one embodiment, the first magnetoresistive R1 has a positive magnetoresistive effect of +ΔR, and the second magnetoresistive R2 has a negative magnetoresistive effect of -ΔR.

[0805] In one embodiment, the first magnetoresistive R1 has a negative magnetoresistive effect of -ΔR, and the second magnetoresistive R2 has a positive magnetoresistive effect of +ΔR.

[0806] like Figure 24 As shown in (b), the sensing unit 100 includes a first magnetoresistive resistor R1.

[0807] The sensing unit 100 includes a second magnetoresistive resistor R2.

[0808] In one embodiment, the first end of the first magnetoresistor R1 is coupled to the power supply terminal Vd; the first end of the second magnetoresistor R2 is coupled to the power supply terminal Vd.

[0809] In one embodiment, the second end of the first magnetoresistive R1 is coupled to the ground terminal GND; the second end of the second magnetoresistive R2 is coupled to the ground terminal GND.

[0810] The second magnetoresistive resistor R2 and the first magnetoresistive resistor have a preset magnetoresistive effect relationship.

[0811] In one embodiment, the first magnetoresistive R1 has a positive magnetoresistive effect of +ΔR, and the second magnetoresistive R2 has a negative magnetoresistive effect of -ΔR.

[0812] In one embodiment, the first magnetoresistive R1 has a negative magnetoresistive effect of -ΔR, and the second magnetoresistive R2 has a positive magnetoresistive effect of +ΔR.

[0813] In a preferred embodiment, such as Figure 24 As shown in (b), the first end of the first magnetoresistive R1 is coupled to the power supply terminal Vd, and the first end of the second magnetoresistive R2 is coupled to the power supply terminal Vd; and the first magnetoresistive R1 has a negative magnetoresistive effect -ΔR, and the second magnetoresistive R2 has a positive magnetoresistive effect +ΔR.

[0814] The sensing unit 100 also includes a third magnetoresistive resistor R3.

[0815] The first end of the third magnetoresistor R3 is coupled to the second end of the first magnetoresistor R1, and the second end of the third magnetoresistor R3 is coupled to the ground terminal GND.

[0816] The first end of the first magnetoresistor R1 is coupled to the power supply terminal Vd.

[0817] This forms a magnetoresistive configuration with a half-bridge structure.

[0818] In one embodiment, the sensing signal is related to the voltage value Vout1 at the second terminal of the first magnetoresistive R1.

[0819] In one embodiment, the sensing signal is related to the voltage value Vout1 at the first terminal of the third magnetoresistor R3.

[0820] In one embodiment, an output node is included between the second end of the first magnetoresistor R1 and the first end of the third magnetoresistor R3, and the output node is used to generate a corresponding sensing signal.

[0821] There is a pre-defined magnetoresistive effect relationship between the third magnetoresistive resistor R3 and the first magnetoresistive resistor R1.

[0822] In one embodiment, the first magnetoresistive R1 has a negative magnetoresistive effect -ΔR, and the third magnetoresistive R3 has a positive magnetoresistive effect +ΔR.

[0823] In one embodiment, the first magnetoresistive R1 has a positive magnetoresistive effect of +ΔR, and the third magnetoresistive R3 has a negative magnetoresistive effect of -ΔR.

[0824] The sensing unit 100 also includes a fourth magnetoresistive resistor R4.

[0825] The first end of the fourth magnetoresistor R4 is coupled to the second end of the second magnetoresistor R2, and the second end of the fourth magnetoresistor R4 is coupled to the ground terminal GND.

[0826] The first end of the second magnetoresistor R2 is coupled to the power supply terminal Vd.

[0827] This forms a magnetoresistive configuration with a half-bridge structure.

[0828] In one embodiment, the sensing signal is related to the voltage value Vout2 at the second terminal of the second magnetoresistive R2.

[0829] In one embodiment, the sensing signal is related to the voltage value Vout2 at the first terminal of the fourth magnetoresistive R4.

[0830] In one embodiment, an output node is included between the second end of the second magnetoresistor R2 and the first end of the fourth magnetoresistor R4, and the output node is used to generate a corresponding sensing signal.

[0831] There is a pre-defined magnetoresistive effect relationship between the fourth magnetoresistive resistor R4 and the second magnetoresistive resistor R2.

[0832] In one embodiment, the second magnetoresistive R2 has a negative magnetoresistance effect of -ΔR, and the fourth magnetoresistive R4 has a positive magnetoresistance effect of +ΔR.

[0833] In one embodiment, the second magnetoresistive R2 has a positive magnetoresistance effect of +ΔR, and the fourth magnetoresistive R4 has a negative magnetoresistance effect of -ΔR.

[0834] In one specific embodiment, the first magnetoresistive R1 has a negative magnetoresistive effect of -ΔR, the second magnetoresistive R2 has a positive magnetoresistive effect of +ΔR, the third magnetoresistive R3 has a positive magnetoresistive effect of +ΔR, and the fourth magnetoresistive R4 has a negative magnetoresistive effect of -ΔR.

[0835] Four magnetoresistors are coupled together to form a full-bridge structure, which can use the voltage value Vout1 at the second terminal of the first magnetoresistor R1 and the voltage value Vout2 at the second terminal of the second magnetoresistor R2 as outputs. Specifically, the full-bridge structure can use the difference between the voltage values ​​Vout1 and Vout2 as outputs to generate the corresponding sensing signal.

[0836] Figure 25 and Figure 26 The structure of the sensing unit in another embodiment of the present invention is shown.

[0837] The sensing unit 100 includes a first Hall unit H1.

[0838] The detection direction of the first Hall unit H1 is perpendicular to the plane in which the Hall unit (e.g., the first Hall unit H1) is positioned. In one embodiment, the detection direction of the first Hall unit H1 is a third direction Z or its opposite direction. The detection direction of the first Hall unit H1 can indicate that the first Hall unit H1 is sensitive to changes in the magnetic field in that direction.

[0839] The first terminal e11 of the first Hall unit H1 is coupled to the power supply terminal Vd; the second terminal e12 of the first Hall unit H1 is coupled to the ground terminal GND.

[0840] The first Hall unit H1 also includes a third terminal e13 and a fourth terminal e14. When the first Hall unit H1 is energized and a magnetic field along the Z direction is applied, the charge is deflected based on the Lorentz force, generating a potential difference between the third terminal e13 and the fourth terminal e14.

[0841] The sensing unit 100 includes a second Hall unit H2.

[0842] The detection direction of the second Hall unit H2 is perpendicular to the plane in which the Hall unit (e.g., the second Hall unit H2) is positioned. In one embodiment, the detection direction of the second Hall unit H2 is the third direction Z. The detection direction of the second Hall unit H2 indicates that the second Hall unit H2 is sensitive to changes in the magnetic field in that direction.

[0843] The first terminal e21 of the second Hall unit H2 is coupled to the power supply terminal Vd; the second terminal e22 of the second Hall unit H2 is coupled to the ground terminal GND.

[0844] The second Hall unit H2 also includes a third terminal e23 and a fourth terminal e24. When the second Hall unit H2 is energized and a magnetic field along the Z direction is applied, the charge is deflected based on the Lorentz force, generating a potential difference between the third terminal e23 and the fourth terminal e24.

[0845] The third terminal e23 of the second Hall unit H2 is coupled to the third terminal e13 of the first Hall unit H1, and the fourth terminal e24 of the second Hall unit H2 is coupled to the fourth terminal e14 of the first Hall unit H1. In this way, a dual Hall structure is formed.

[0846] The voltage value Vout1 at the coupling point of the fourth terminal e14 of the first Hall unit H1 and the fourth terminal e24 of the second Hall unit H2, and the voltage value Vout2 at the coupling point of the third terminal e13 of the first Hall unit H1 and the third terminal e23 of the second Hall unit H2 can be used as the output.

[0847] After the first magnetic field generator 111 and the second magnetic field generator 121 apply magnetic fields, the dual Hall structure can use the difference between the voltage values ​​Vout1 and Vout2 as the output to generate the corresponding sensing signal.

[0848] In summary, the magnetic field sensing device provided by this invention provides two sensing units located in the same area, one of which is subjected to a preset excitation magnetic field. This allows for the extraction of a calibration signal characterizing the excitation magnetic field information by processing the signals generated by the two sensing units. Since the excitation magnetic field information is preset, if the excitation magnetic field information contained in the calibration information differs from the preset excitation magnetic field information, it can be determined that the magnetic field sensing device has an error, and the sensing signal can be calibrated based on this difference. During this process, because the two sensing units are located in the same area, it helps to form a calibration signal regarding linear error between the two sensing signals, thereby enabling targeted and rapid calibration. Since both sensing units are configured to be sensitive to environmental magnetic fields, the device as a whole possesses high sensitivity.

[0849] It should be understood that although this specification describes embodiments, not every embodiment contains only one independent technical solution. This way of describing the specification is only for clarity. Those skilled in the art should regard the specification as a whole. The technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.

[0850] The detailed descriptions listed above are merely specific descriptions of feasible embodiments of the present invention, and are not intended to limit the scope of protection of the present invention. All equivalent embodiments or modifications made without departing from the spirit of the present invention should be included within the scope of protection of the present invention.

Claims

1. A magnetic field sensing device, characterized in that, include: The first magnetic field generating unit is used to apply a preset first excitation magnetic field to the first sensing unit; A first sensing unit is disposed in a first region and is used to sense the ambient magnetic field to generate a first sensing signal; A second sensing unit is disposed in the first region and is used to sense the ambient magnetic field to generate a second sensing signal; The processing unit is configured to generate a calibration signal based on a first sensing signal and a second sensing signal, the calibration signal containing information corresponding to a first excitation magnetic field, and the calibration signal being used to calibrate the first sensing signal and / or the second sensing signal.

2. The magnetic field sensing device according to claim 1, characterized in that, The arithmetic unit satisfies at least one of the following: The arithmetic unit is used to calibrate the first sensing signal and / or the second sensing signal based on the difference between the value of the calibration signal and the first preset value, wherein the first preset value is determined based on the magnetic field strength of the first excitation magnetic field. The output terminal of the arithmetic unit is coupled to the input terminal of the first sensing unit and / or the input terminal of the second sensing unit, and is used to adjust the drive current of the first sensing unit and / or the second sensing unit. The output terminal of the arithmetic unit is coupled to the input terminal of the first sensing unit and / or the input terminal of the second sensing unit, and is used to adjust the driving voltage of the first sensing unit and / or the second sensing unit. The output terminal of the arithmetic unit is coupled to a first amplifier and / or a second amplifier for adjusting the amplification factor of the first amplifier and / or the second amplifier; the input terminal of the first amplifier is coupled to the output terminal of the first sensing unit, and the output terminal of the first amplifier is coupled to the first input terminal of the arithmetic unit; the input terminal of the second amplifier is coupled to the output terminal of the second sensing unit, and the output terminal of the second amplifier is coupled to the second input terminal of the arithmetic unit. The arithmetic unit is used to adjust the arithmetic gain of the first sensing signal and / or the second sensing signal according to the calibration signal.

3. The magnetic field sensing device according to claim 1, characterized in that, Also includes: The third sensing unit is located in a second region different from the first region and is used to sense the ambient magnetic field to generate a third sensing signal. The computing unit determines the magnetic field sensing signal of the magnetic field sensing device based on the values ​​of the second sensing signal and the third sensing signal.

4. The magnetic field sensing device according to claim 1, characterized in that, Also includes: The second magnetic field generating unit is used to apply a preset second excitation magnetic field to the second sensing unit, wherein the second excitation magnetic field is opposite in direction to the first excitation magnetic field; The ambient magnetic field sensed by the first sensing unit includes a first excitation magnetic field and a first signal magnetic field corresponding to the first region; The ambient magnetic field sensed by the second sensing unit includes the second excitation magnetic field and the first signal magnetic field; The arithmetic unit satisfies at least one of the following: The magnetic field of the first signal is determined based on the sum of the values ​​of the first sensing signal and the second sensing signal; The calibration signal is determined based on the difference between the values ​​of the first sensing signal and the second sensing signal.

5. The magnetic field sensing device according to claim 1, characterized in that, Also includes: The third magnetic field generating unit is used to apply a preset third excitation magnetic field to the third sensing unit, wherein the third excitation magnetic field is in the same direction as the first excitation magnetic field. The third sensing unit is located in a second region different from the first region and is used to sense the ambient magnetic field to generate a third sensing signal. The ambient magnetic field sensed by the first sensing unit includes a first excitation magnetic field and a first signal magnetic field corresponding to the first region; The environmental magnetic field sensed by the third sensing unit includes a third excitation magnetic field and a second signal magnetic field corresponding to the second region; The processing unit determines the magnetic field sensing signal of the magnetic field sensing device based on the difference between the value of the third sensing signal and the value of the first sensing signal.

6. The magnetic field sensing device according to claim 3, characterized in that, Also includes: The fourth sensing unit, located in the second region, is used to sense the ambient magnetic field to generate a fourth sensing signal; The arithmetic unit determines the calibration signal based on the values ​​of the first sensing signal and the fourth sensing signal, as well as the values ​​of the second sensing signal and the third sensing signal.

7. The magnetic field sensing device according to claim 6, characterized in that, Also includes: The fifth sensing unit, located in the first region, is used to sense the ambient magnetic field to generate a fifth sensing signal; The sixth sensing unit, located in the second region, is used to sense the ambient magnetic field to generate a sixth sensing signal; The computing unit, The magnetic field sensing signal of the magnetic field sensing device is determined based on the sum of the values ​​of the second sensing signal and the fifth sensing signal, and the sum of the values ​​of the third sensing signal and the sixth sensing signal.

8. The magnetic field sensing device according to claim 7, characterized in that, Also includes: The second magnetic field generating unit is used to apply a preset second excitation magnetic field to the second sensing unit; The third magnetic field generating unit is used to apply a preset third excitation magnetic field to the third sensing unit, wherein the third excitation magnetic field is opposite in direction to the second excitation magnetic field; A fourth magnetic field generating unit is used to apply a preset fourth excitation magnetic field to the fourth sensing unit, wherein the fourth excitation magnetic field is opposite in direction to the first excitation magnetic field; The fifth magnetic field generating unit is used to apply a preset fifth excitation magnetic field to the fifth sensing unit, wherein the fifth excitation magnetic field is in the same direction as the second excitation magnetic field; The sixth magnetic field generating unit is used to apply a preset sixth excitation magnetic field to the sixth sensing unit, and the sixth excitation magnetic field has the same direction as the third excitation magnetic field. The arithmetic unit satisfies at least one of the following: The magnetic field sensing signal of the magnetic field sensing device is determined based on the sum of the values ​​of the second and fifth sensing signals, the sum of the values ​​of the third and sixth sensing signals, and the difference between the values ​​of the first and fourth sensing signals. The calibration signal is determined based on the sum of the values ​​of the second and fifth sensing signals, the sum of the values ​​of the third and sixth sensing signals, and the difference between the values ​​of the first and fourth sensing signals.

9. The magnetic field sensing device according to claim 7, characterized in that, Also includes: The second magnetic field generating unit is used to apply a preset second excitation magnetic field to the second sensing unit; The third magnetic field generating unit is used to apply a preset third excitation magnetic field to the third sensing unit, wherein the third excitation magnetic field is opposite in direction to the second excitation magnetic field; A fourth magnetic field generating unit is used to apply a preset fourth excitation magnetic field to the fourth sensing unit, wherein the fourth excitation magnetic field has the same direction as the first excitation magnetic field; The fifth magnetic field generating unit is used to apply a preset fifth excitation magnetic field to the fifth sensing unit, wherein the fifth excitation magnetic field is in the same direction as the second excitation magnetic field; The sixth magnetic field generating unit is used to apply a preset sixth excitation magnetic field to the sixth sensing unit, and the sixth excitation magnetic field has the same direction as the third excitation magnetic field. The arithmetic unit satisfies at least one of the following: The magnetic field sensing signal of the magnetic field sensing device is determined based on the sum of the values ​​of the second sensing signal and the fifth sensing signal, and the sum of the values ​​of the first sensing signal and the fourth sensing signal. The calibration signal is determined based on the sum of the values ​​of the second and fifth sensing signals, the sum of the values ​​of the third and sixth sensing signals, and the sum of the values ​​of the first and fourth sensing signals.

10. The magnetic field sensing device according to claim 7, characterized in that, Also includes: The second magnetic field generating unit is used to apply a preset second excitation magnetic field to the second sensing unit; The third magnetic field generating unit is used to apply a preset third excitation magnetic field to the third sensing unit, wherein the third excitation magnetic field is in the same direction as the second excitation magnetic field. The fourth magnetic field generating unit is used to apply a preset fourth excitation magnetic field to the fourth sensing unit; The fifth magnetic field generating unit is used to apply a preset fifth excitation magnetic field to the fifth sensing unit, wherein the fifth excitation magnetic field is in the same direction as the second excitation magnetic field; The sixth magnetic field generating unit is used to apply a preset sixth excitation magnetic field to the sixth sensing unit, and the sixth excitation magnetic field has the same direction as the third excitation magnetic field. The arithmetic unit satisfies at least one of the following: The second excitation magnetic field is in the same direction as the first excitation magnetic field, and the fourth excitation magnetic field is in the opposite direction to the first excitation magnetic field. The magnetic field sensing signal of the magnetic field sensing device is determined based on the sum of the values ​​of the second sensing signal and the fifth sensing signal, and the difference between the values ​​of the first sensing signal and the fourth sensing signal. The second excitation magnetic field is in the same direction as the first excitation magnetic field, and the fourth excitation magnetic field is in the opposite direction to the first excitation magnetic field. The calibration signal is determined based on the sum of the values ​​of the second and fifth sensing signals, the sum of the values ​​of the third and sixth sensing signals, and the difference between the values ​​of the first and fourth sensing signals. The second excitation magnetic field is opposite in direction to the first excitation magnetic field, and the fourth excitation magnetic field is in the same direction as the first excitation magnetic field. The magnetic field sensing signal of the magnetic field sensing device is determined based on the sum of the values ​​of the second and fifth sensing signals, the sum of the values ​​of the third and sixth sensing signals, and the sum of the values ​​of the first and fourth sensing signals. The second excitation magnetic field is in the opposite direction to the first excitation magnetic field, and the fourth excitation magnetic field is in the same direction as the first excitation magnetic field. The calibration signal is determined based on the sum of the values ​​of the second and fifth sensing signals, the sum of the values ​​of the third and sixth sensing signals, and the sum of the values ​​of the first and fourth sensing signals.

11. The magnetic field sensing device according to claim 7, characterized in that, Also includes: The third magnetic field generating unit is used to apply a preset third excitation magnetic field to the third sensing unit, wherein the third excitation magnetic field is opposite in direction to the first excitation magnetic field; The sixth magnetic field generating unit is used to apply a preset sixth excitation magnetic field to the sixth sensing unit, and the sixth excitation magnetic field has the same direction as the third excitation magnetic field. The arithmetic unit determines the magnetic field sensing signal of the magnetic field sensing device based on the sum of the values ​​of the second sensing signal and the fifth sensing signal, the sum of the values ​​of the third sensing signal and the sixth sensing signal, and the difference between the values ​​of the first sensing signal and the fourth sensing signal.

12. The magnetic field sensing device according to claim 6, characterized in that, Also includes: The second magnetic field generating unit is used to apply a preset second excitation magnetic field to the second sensing unit; The third magnetic field generating unit is used to apply a preset third excitation magnetic field to the third sensing unit, wherein the third excitation magnetic field is opposite in direction to the second excitation magnetic field; The fifth sensing unit, located in the first region, is used to sense the ambient magnetic field to generate a fifth sensing signal; The fifth magnetic field generating unit is used to apply a preset fifth excitation magnetic field to the fifth sensing unit, wherein the fifth excitation magnetic field is in the same direction as the second excitation magnetic field; The sixth sensing unit, located in the second region, is used to sense the ambient magnetic field to generate a sixth sensing signal; The sixth magnetic field generating unit is used to apply a preset sixth excitation magnetic field to the sixth sensing unit, and the sixth excitation magnetic field has the same direction as the third excitation magnetic field. The arithmetic unit satisfies at least one of the following: The magnetic field sensing signal of the magnetic field sensing device is determined based on the difference between the value of the third sensing signal and the value of the second sensing signal, the difference between the value of the sixth sensing signal and the value of the fifth sensing signal, and the difference between the value of the first sensing signal and the value of the fourth sensing signal. The calibration signal is determined based on the difference between the value of the third sensing signal and the value of the second sensing signal, the difference between the value of the sixth sensing signal and the value of the fifth sensing signal, and the difference between the value of the first sensing signal and the value of the fourth sensing signal.

13. The magnetic field sensing device according to claim 3, characterized in that, Also includes: The fifth sensing unit, located in the first region, is used to sense the ambient magnetic field to generate a fifth sensing signal; The sixth sensing unit, located in the second region, is used to sense the ambient magnetic field to generate a sixth sensing signal; The second magnetic field generating unit is used to apply a preset second excitation magnetic field to the second sensing unit; The third magnetic field generating unit is used to apply a preset third excitation magnetic field to the third sensing unit; The fifth magnetic field generating unit is used to apply a preset fifth excitation magnetic field to the fifth sensing unit, wherein the fifth excitation magnetic field is in the same direction as the second excitation magnetic field; The sixth magnetic field generating unit is used to apply a preset sixth excitation magnetic field to the sixth sensing unit, and the sixth excitation magnetic field has the same direction as the third excitation magnetic field. The arithmetic unit satisfies at least one of the following: The calibration signal is determined based on the sum of the values ​​of the second and fifth sensing signals, and the value of the first sensing signal. The magnetic field sensing signal of the magnetic field sensing device is determined based on the sum of the values ​​of the third sensing signal and the sixth sensing signal, and the value of the first sensing signal. The magnetic field sensing signal of the magnetic field sensing device is determined based on the sum of the values ​​of the second sensing signal and the fifth sensing signal, and the sum of the values ​​of the third sensing signal and the sixth sensing signal.

14. The magnetic field sensing device according to claim 3, characterized in that, Also includes: The fourth sensing unit, located in the first region, is used to sense the ambient magnetic field to generate a fourth sensing signal; A fourth magnetic field generating unit is used to apply a preset fourth excitation magnetic field to the fourth sensing unit, wherein the fourth excitation magnetic field has the same direction as the first excitation magnetic field; The arithmetic unit determines the calibration signal based on the sum of the values ​​of the first sensing signal and the fourth sensing signal, as well as the second sensing signal.

15. The magnetic field sensing device according to claim 1, characterized in that, The third sensing unit is located in a second region different from the first region and is used to sense the ambient magnetic field to generate a third sensing signal. The third magnetic field generating unit is used to apply a preset third excitation magnetic field to the third sensing unit, wherein the third excitation magnetic field is opposite in direction to the first excitation magnetic field; The fifth sensing unit, located in the second region, is used to sense the ambient magnetic field to generate a fifth sensing signal; The arithmetic unit satisfies at least one of the following: The calibration signal is determined based on the values ​​of the first sensing signal, the third sensing signal, and the difference between the value of the fifth sensing signal and the value of the second sensing signal; The magnetic field sensing signal of the magnetic field sensing device is determined based on the difference between the value of the fifth sensing signal and the value of the second sensing signal. The magnetic field sensing signal of the magnetic field sensing device is determined based on the sum of the values ​​of the first sensing signal and the third sensing signal.

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