Light emitting diode and light emitting device

Abstract

The utility model provides a light emitting diode and a light emitting device. The light-emitting diode comprises a substrate, a reflecting layer and a semiconductor laminated layer which are sequentially laminated from bottom to top, a first surface of the substrate comprises a first area and a second area surrounding the first area, and the surface, opposite to the substrate, of the reflecting layer comprises an electrode area and a non-electrode area corresponding to the second area; corresponding to the non-electrode area, a plurality of bulges are arranged on the surface, deviating from the substrate, of the reflecting layer; or, corresponding to the non-electrode area, a plurality of grooves are formed in the substrate, and the grooves penetrate through the reflecting layer and part of the substrate. According to the light-emitting diode, the uneven surface structure such as the protrusions or the grooves is formed, heat transfer is carried out outwards through the uneven surface structure, the heat transfer contact area between the light-emitting diode and an external heat dissipation medium is increased, the heat productivity of the light-emitting diode is effectively reduced, and the working stability and reliability of the light-emitting diode are improved.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor devices, in particular to a light emitting diode and a light emitting device. Background Art

[0002] Light Emitting Diode (LED) is a semiconductor light-emitting device with high conversion efficiency and is widely used in lighting, display screens, automobiles, communications and other fields.

[0003] With the continuous advancement of optical system technology, the requirements for light source quality and light efficiency are also increasing. Especially in the field of lighting and display, efficient and uniform light spot quality is crucial to improving user experience. After packaging, the shape of the traditional rectangular LED chip is fixed, which makes it difficult to directly meet the special requirements of a specific optical system for light spot shape and light efficiency.

[0004] In recent years, LED chips with non-rectangular light-emitting areas have attracted widespread attention because they can flexibly adjust the shape and size of the light spot. For example, LED chips with circular light-emitting surfaces can significantly improve the light output efficiency and uniformity of the light spot through the non-rectangular light-emitting surface shape.

[0005] However, the application of non-rectangular light-emitting area LED chips also brings some new problems. Due to the change in the shape of the light-emitting area, the active area ratio in the complete chip will be reduced accordingly, which means that under the same current conditions, the current density of the active area of ​​the non-rectangular light-emitting area LED chip will be relatively increased, resulting in the heat source being more concentrated in the special light-emitting area, which will not only increase the heat generated by the LED chip, but also bring greater challenges to the heat dissipation design of the LED chip.

[0006] In order to ensure that the light source is efficient and uniform, while effectively reducing the heat generated by the LED chip and improving its heat dissipation performance, the present application provides a light emitting diode and a light emitting device. Utility Model Content

[0007] In view of the defects and deficiencies of light-emitting diodes in the prior art, the present application provides a light-emitting diode and a light-emitting device. The light-emitting diode includes a substrate, a reflective layer and a semiconductor stack stacked in sequence, the first surface of the substrate includes a first area and a second area surrounding the first area, corresponding to the second area, the surface of the reflective layer away from the substrate includes an electrode area and a non-electrode area; corresponding to the non-electrode area, a plurality of protrusions are arranged on the surface of the reflective layer away from the substrate, or a plurality of grooves are arranged in the substrate, the grooves penetrate the reflective layer and part of the substrate, after forming a non-flat surface structure such as a protrusion or a groove, heat is transferred outward through the protrusion surface or the groove surface, the heat transfer contact area between the light-emitting diode and the external heat dissipation medium is increased, and the heat dissipation performance of the light-emitting diode is improved.

[0008] An embodiment of the present application provides a light emitting diode, comprising at least:

[0009] A substrate having a first surface and a second surface, wherein the first surface includes a first area and a second area surrounding the first area;

[0010] A reflective layer, the reflective layer is disposed on the first surface, and the reflective layer extends from the first area to the second area; corresponding to the second area, the surface of the reflective layer away from the substrate includes an electrode area and a non-electrode area;

[0011] A semiconductor stack, corresponding to the first region, the semiconductor stack is arranged on a surface of the reflective layer away from the substrate; along a direction from the first surface to the second surface, the semiconductor stack includes a first semiconductor layer, an active layer, and a second semiconductor layer stacked in sequence;

[0012] Wherein, corresponding to the non-electrode area, a surface of the reflective layer facing away from the substrate is provided with a plurality of protrusions; or, corresponding to the non-electrode area, a plurality of grooves are provided in the substrate, and the grooves penetrate the reflective layer and a part of the substrate.

[0013] Another embodiment of the present application provides a light emitting device, including:

[0014] A circuit board and a plurality of light-emitting units arranged on the circuit board, wherein the light-emitting units include the light-emitting diodes mentioned above.

[0015] As described above, the light emitting diode and the light emitting device of the present application have the following beneficial effects:

[0016] The light-emitting diode of the present application includes a substrate, a reflective layer and a semiconductor stack stacked in sequence from bottom to top, the first surface of the substrate includes a first area and a second area surrounding the first area, corresponding to the second area, the surface of the reflective layer away from the substrate includes an electrode area and a non-electrode area; corresponding to the non-electrode area, a plurality of protrusions are arranged on the surface of the reflective layer away from the substrate; or, a plurality of grooves are arranged in the substrate, and the grooves penetrate the reflective layer and part of the substrate. The light-emitting diode of the present application forms a non-flat surface structure with protrusions or grooves, and heat is transferred outward through the non-flat surface structure, thereby increasing the heat transfer contact area between the light-emitting diode and the external heat dissipation medium, effectively reducing the heat generated by the light-emitting diode, and improving the stability and reliability of the light-emitting diode. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 Shown is a schematic diagram of the top view structure of the light emitting diode provided in Example 1 of the present application.

[0018] Figure 2Display as Figure 1 Schematic diagram of the cross-sectional structure along the AA direction.

[0019] Figure 3 Shown is a schematic diagram of the top view structure of the light emitting diode provided in the second embodiment of the present application.

[0020] Figure 4 Display as Figure 3 Schematic diagram of the cross-sectional structure along the BB direction.

[0021] Figure 5 Shown is a schematic diagram of the structure of the light-emitting device provided in Example 3 of the present application.

[0022] Component number description

[0023] 10, circuit board; 20, light-emitting unit; 100, substrate; 101, first surface; 102, second surface; 110, first region; 120, second region; 121, electrode region; 122, non-electrode region; 200, reflective layer; 300, semiconductor stack; 301, conductive hole; 310, first semiconductor layer; 320, active layer; 330, second semiconductor layer; 400, insulating layer; 500, metal bonding layer; 600, first electrode; 700, second electrode; 1221, groove; 1222, protrusion. DETAILED DESCRIPTION

[0024] The following is an explanation of the implementation of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific implementations, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention.

[0025] The present application provides a light emitting diode, comprising:

[0026] A substrate having a first surface and a second surface, wherein the first surface includes a first area and a second area surrounding the first area;

[0027] A reflective layer, the reflective layer is disposed on the first surface, and the reflective layer extends from the first area to the second area; corresponding to the second area, the surface of the reflective layer away from the substrate includes an electrode area and a non-electrode area;

[0028] A semiconductor stack, corresponding to the first region, the semiconductor stack is arranged on a surface of the reflective layer away from the substrate; along a direction from the first surface to the second surface, the semiconductor stack includes a first semiconductor layer, an active layer, and a second semiconductor layer stacked in sequence;

[0029] Wherein, corresponding to the non-electrode area, a surface of the reflective layer facing away from the substrate is provided with a plurality of protrusions; or, a plurality of grooves are provided in the substrate, and the grooves penetrate the reflective layer and a portion of the substrate.

[0030] The light-emitting diode provided in this embodiment includes a substrate, a reflective layer and a semiconductor stack stacked in sequence from bottom to top, the first surface of the substrate includes a first area and a second area surrounding the first area, corresponding to the second area, the surface of the reflective layer away from the substrate includes an electrode area and a non-electrode area; corresponding to the non-electrode area, a plurality of protrusions are arranged on the surface of the reflective layer away from the substrate; or, corresponding to the non-electrode area, a plurality of grooves are arranged in the substrate, and the grooves penetrate the reflective layer and part of the substrate. The light-emitting diode of this embodiment forms a non-flat surface structure with protrusions or grooves, and heat is transferred outward through the non-flat surface structure, thereby increasing the heat transfer contact area between the light-emitting diode and the external heat dissipation medium, effectively reducing the heat generated by the light-emitting diode, and improving the stability and reliability of the light-emitting diode.

[0031] In some embodiments, the ratio of the area of ​​the first region to the total area of ​​the first region and the second region does not exceed 80%.

[0032] This embodiment effectively reduces the heat generated by the light-emitting diode and improves the working stability and reliability of the light-emitting diode by limiting the ratio of the first area to the total area of ​​the first area and the second area (or the total area of ​​the substrate).

[0033] In some embodiments, the distance between adjacent protrusions is greater than the maximum transverse dimension or the maximum longitudinal dimension in the cross section of a single protrusion;

[0034] Alternatively, the distance between adjacent grooves is greater than the maximum transverse dimension or the maximum longitudinal dimension in the cross section of a single groove.

[0035] This embodiment effectively reduces the heat generated by the light-emitting diode and improves the working stability and reliability of the light-emitting diode by limiting the distance between adjacent protrusions or the distance between adjacent grooves.

[0036] In some embodiments, a surface of the protrusion facing away from the reflective layer is at least flush with a surface of the semiconductor stack facing away from the reflective layer.

[0037] This embodiment effectively improves the heat dissipation efficiency of the light emitting diode by limiting the height of the protrusion, and improves the working stability and reliability of the light emitting diode.

[0038] In some embodiments, along the direction from the first surface to the second surface, an insulating layer and a metal bonding layer are sequentially stacked between the reflective layer and the substrate.

[0039] In some embodiments, a plurality of conductive holes are disposed in the semiconductor stack, and the conductive holes penetrate the second semiconductor layer, the active layer and a portion of the first semiconductor layer;

[0040] The inner wall of the conductive hole is provided with the insulating layer and the metal bonding layer in sequence from the outside to the inside, and the metal bonding layer passes through the conductive hole and is electrically connected to the first semiconductor layer.

[0041] In some embodiments, the electrode region includes a first electrode, and the first electrode is electrically connected to the reflective layer;

[0042] A second electrode is disposed on the second surface of the substrate, and the second electrode is electrically connected to the metal bonding layer through the substrate;

[0043] Corresponding to the non-electrode area, a plurality of grooves are arranged in the substrate along the direction from the first surface to the second surface, and the grooves penetrate the reflective layer, the insulating layer, the metal bonding layer and a portion of the substrate.

[0044] The second electrode of the light-emitting diode of this embodiment is arranged on the back side of the substrate. The structure for improving the heat dissipation efficiency is to open a groove on the substrate. The groove passes through the reflective layer, the insulating layer, the metal bonding layer and part of the substrate. The groove increases the heat transfer contact area between the light-emitting diode and the external heat dissipation medium. The heat generated by the light-emitting diode is further released outward from the substrate, effectively reducing the heat generation of the light-emitting diode.

[0045] In some embodiments, the electrode region includes a first electrode and a second electrode, the first electrode is disposed on a surface of the reflective layer facing away from the substrate, and the first electrode is electrically connected to the reflective layer;

[0046] A through hole penetrating the reflective layer and the insulating layer is provided along a direction from the first surface to the second surface, the insulating layer and the metal bonding layer are sequentially provided on the inner wall of the through hole from the outside to the inside, the second electrode is provided on the surface of the metal bonding layer passing through the through hole, and the second electrode is electrically connected to the metal bonding layer;

[0047] Corresponding to the non-electrode area, a plurality of protrusions are provided on the surface of the reflective layer away from the substrate.

[0048] The light emitting diode of this embodiment has a horizontal vertical structure. The structure for improving the heat dissipation efficiency is to set a protrusion in the non-electrode area of ​​the reflective layer. The protrusion increases the heat transfer contact area with the external heat dissipation medium and reduces the heat generation of the light emitting diode.

[0049] In some embodiments, a wavelength conversion layer is disposed on a surface of the semiconductor stack facing away from the reflective layer;

[0050] The wavelength conversion layer extends into the groove; or, the wavelength conversion layer extends to the surface and side surfaces of the protrusions, and between adjacent protrusions.

[0051] The light emitting diode of this embodiment is provided with a wavelength conversion layer, so as to enrich the color of the light emitted by the light emitting diode and improve the wide application of the light emitting diode.

[0052] Another embodiment of the present application provides a light-emitting device, including a circuit board and a plurality of light-emitting units arranged on the circuit board, wherein the light-emitting units include the light-emitting diodes provided in the present application.

[0053] The light-emitting unit in the light-emitting device of the present embodiment adopts the light-emitting diode provided by the present application. Since the light-emitting diode provided by the present application includes a substrate, a reflective layer and a semiconductor stack stacked in sequence from bottom to top, the first surface of the substrate includes a first area and a second area surrounding the first area, and corresponding to the second area, the surface of the reflective layer away from the substrate includes an electrode area and a non-electrode area; corresponding to the non-electrode area, a plurality of protrusions are arranged on the surface of the reflective layer away from the substrate; or, corresponding to the non-electrode area, a plurality of grooves are arranged in the substrate, and the grooves penetrate the reflective layer and part of the substrate, and the non-flat surface structure such as the protrusions or grooves is formed, and heat is transferred to the outside through the non-flat surface structure, thereby increasing the heat transfer contact area between the light-emitting diode and the external heat dissipation medium, effectively reducing the heat generated by the light-emitting diode, and improving the working stability and reliability of the light-emitting diode.

[0054] In the prior art, in order to improve the light spot quality and light efficiency of LEDs, LEDs with non-rectangular light-emitting areas are used, and then packaged to achieve this, such as flashlights using circular light-emitting surface LEDs, or LEDs with mixed-color packages using fan-shaped light-emitting surfaces. The above-mentioned light-emitting areas are all non-rectangular light-emitting areas, but after changing the shape of the light-emitting area, the active area ratio in the complete light-emitting diode will become smaller, resulting in an increase in current density, and the heat source is concentrated in the light-emitting area of ​​a special shape, which will not only increase the heat generated by the light-emitting diode, but also bring greater challenges to the heat dissipation design of the light-emitting diode.

[0055] In view of the above defects, the present application provides a light emitting diode and a light emitting device, which are now described in detail through the following embodiments.

[0056] Embodiment 1

[0057] This embodiment provides a light emitting diode, such as Figure 1 and Figure 2As shown, the light emitting diode comprises a substrate 100, a reflective layer 200 and a semiconductor stack 300 stacked in sequence from bottom to top. The substrate 100 has a first surface 101 (upper surface) and a second surface 102 (lower surface), and the first surface 101 comprises a first region 110 and a second region 120 surrounding the first region 110. The reflective layer 200 is disposed above the first surface 101 of the substrate 100, and the reflective layer 200 extends from the first region 110 to the second region 120. Corresponding to the second region 120, the surface of the reflective layer 200 facing away from the substrate 100 includes an electrode region 121 and a non-electrode region 122; corresponding to the first region 110, the semiconductor stack 300 is disposed on the surface of the reflective layer 200 facing away from the substrate 100 (that is, the upper surface of the reflective layer 200), and the semiconductor stack 300 includes a first semiconductor layer 310, an active layer 320 and a second semiconductor layer 330 stacked in sequence from top to bottom; corresponding to the non-electrode region 122, a plurality of grooves 1221 are disposed in the substrate 100, each groove 1221 penetrates the reflective layer 200 and a portion of the substrate 100, that is, each groove 1221 opens from the surface of the reflective layer 200 facing away from the substrate 100 (that is, the upper surface of the reflective layer 200) and extends to the inside of the substrate 100, but does not penetrate the substrate 100. The light emitting diode of this embodiment is provided with a groove 1221 on the substrate 100. The groove 1221 increases the heat transfer contact area with the external heat dissipation medium, effectively reduces the heat generated by the light emitting diode, and improves the working stability and reliability of the light emitting diode.

[0058] The substrate 100 is a conductive substrate, and the material of the conductive substrate may be, for example, silicon, silicon carbide, or gallium nitride.

[0059] The first semiconductor layer 310 is an N-type semiconductor layer that provides electrons through N-type doping. The N-type semiconductor layer can be formed by doping Si, Ge, Sn, Se, Te, etc. in the semiconductor. The second semiconductor layer 330 is a P-type semiconductor layer that provides holes through P-type doping. The P-type semiconductor layer can be formed by doping Mg, Zn, Ca, Sr, Ba, etc. in the semiconductor. The active layer 320 can be a single quantum well structure or a multiple quantum well (MQWs) structure. The multiple quantum well structure is formed by alternately stacking quantum well layers and quantum barrier layers. The quantum barrier layers can be GaN layers, AlGaN layers, or AlGaInP layers. Optionally, the active layer 320 may include multiple quantum well structures such as GaN / AlGaN, InAlGaN / InAlGaN, InGaN / AlGaN, GaInP / AlGaInP, GaInP / AlInP, or InGaAs / AlInGaAs. In order to improve the light emitting efficiency of the active layer 320 , it can be achieved by changing the depth of the quantum well, the number of layers, thickness and / or other features of the paired quantum wells and quantum well barriers in the active layer 320 .

[0060] The reflective layer 200 may be formed of at least one metal selected from Ag, Al, Ni, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, and Hf. The reflective layer 200 can reflect the light radiated from the semiconductor stack 300 toward the side of the substrate 100 back to the semiconductor stack 300 and radiate out from the light emitting side of the semiconductor stack 300.

[0061] In an optional embodiment, the ratio of the area of ​​the first region 110 to the total area of ​​the first region 110 and the second region 120 does not exceed 80%, that is, the ratio of the area of ​​the light-emitting region to the area of ​​the substrate 100 does not exceed 80%, which is beneficial to reduce the heat generated by the light-emitting diode and improve the working stability and reliability of the light-emitting diode. If the area of ​​the first region 110 is too large, the groove 1221 is set at this time, but it cannot significantly improve the heat dissipation effect of the light-emitting diode.

[0062] In an optional embodiment, the shape of the cross section of the groove 1221 can be, for example, a square, a rectangle, a circle, or an ellipse. The distance between adjacent grooves 1221 is greater than the maximum transverse dimension or the maximum longitudinal dimension in the cross section of a single groove 1221. For example, when the cross section of the groove 1221 is a square, the distance between adjacent grooves 1221 is greater than the side length of the groove 1221; when the cross section of the groove 1221 is a circle, the distance between adjacent grooves 1221 is greater than the diameter of the groove 1221. While ensuring that the substrate 100 is conductive, the heat dissipation efficiency of the light-emitting diode is improved, and the working stability and reliability of the light-emitting diode are improved.

[0063] In an optional embodiment, if Figure 2 As shown, an insulating layer 400 and a metal bonding layer 500 are stacked in sequence from top to bottom between the reflective layer 200 and the substrate 100. The insulating layer 400 is made of an insulating material, such as SiO2, SiN, SiO x N y , TiO2, Si3N4, Al2O3, TiN, AlN, ZrO2, TiAlN, TiSiN, HfO2, TaO2, MgF2, or a Bragg reflector (DBR) formed by repeatedly stacking two or more of the aforementioned materials. The metal bonding layer 500 has at least two metal layers, one metal layer is an N-electrode layer, and the material of the N-electrode layer can be, for example, Al, Ag, Cr, Pt, TiW; the other metal layer is a bonding layer, which adheres one side of the semiconductor stack 300 to the substrate 100. The bonding layer is usually made of metals such as gold, tin, titanium, nickel, platinum, etc., and the bonding layer can be a combination of multiple materials.

[0064] In an optional embodiment, if Figure 2 As shown, a plurality of conductive holes 301 ( Figure 2 Only three conductive holes 301 are shown as examples. The conductive holes 301 penetrate the second semiconductor layer 330, the active layer 320 and part of the first semiconductor layer 310. The inner sidewalls of the conductive holes 301 are sequentially provided with an insulating layer 400 and a metal bonding layer 500 from the outside to the inside. Figure 2 Only one insulating layer 400 is illustrated in the figure, and there may be at least two insulating layers 400 in actual production. The metal bonding layer 500 is filled in the remaining space after the insulating layer 400 is set in the conductive hole 301 (that is, the metal bonding layer 500 is set on the side of the conductive hole 301 close to the first semiconductor layer 310 and on the side wall after the insulating layer 400 is filled), and the metal bonding layer 500 is electrically connected to the first semiconductor layer 310 through the conductive hole 301.

[0065] In an optional embodiment, if Figure 1 and Figure 2 As shown, the electrode region 121 includes a first electrode 600, which is electrically connected to the reflective layer 200; the second surface 102 of the substrate 100 is provided with a second electrode 700, which is electrically connected to the metal bonding layer 500 through the substrate 100. The first electrode 600 can be a P-type electrode, and the material of the first electrode 600 can be, for example, Ti, Pt, Ni, Au, etc. The material of the second electrode 700 can be, for example, Ti, Pt, Ni, Au, Sn, etc. Corresponding to the non-electrode region 122, a plurality of grooves 1221 are provided in the substrate 100, and from top to bottom, the grooves 1221 penetrate the reflective layer 200, the insulating layer 400, the metal bonding layer 500 and part of the substrate 100.

[0066] In an optional embodiment, the surface of the first semiconductor layer 310 in the semiconductor stack 300 that is away from the active layer 320 is a rough surface, and the rough surface is conducive to improving the light emitting effect of the light emitting diode. In order to enrich the light emitting color of the light emitting diode, a wavelength conversion layer (not shown in the figure) is set on the surface of the semiconductor stack 300 away from the reflective layer 200. The wavelength conversion layer converts the original light (usually blue light or ultraviolet light) emitted by the light emitting diode into light of other colors to achieve a richer spectral output, so that the light emitting diode can provide more diverse gloss options to meet the needs of different lighting and display applications, and also help to improve the overall performance and application range of the light emitting diode. Optionally, the groove 1221 is filled with a wavelength conversion layer.

[0067] Embodiment 2

[0068] This embodiment also provides a light emitting diode, such as Figure 3 and Figure 4 As shown, the light-emitting diode also includes a substrate 100, a reflective layer 200 and a semiconductor stack 300 stacked in sequence from bottom to top. The substrate 100 has a first surface 101 and a second surface 102, and the first surface 101 includes a first area 110 and a second area 120 surrounding the first area 110; the reflective layer 200 is arranged above the first surface 101 of the substrate 100, and the reflective layer 200 extends from the first area 110 to the second area 120; corresponding to the second area 120, the surface of the reflective layer 200 away from the substrate 100 includes an electrode area 121 and a non-electrode area 122; corresponding to the first area 110, the semiconductor stack 300 is arranged on the surface of the reflective layer 200 away from the substrate 100, and the semiconductor stack 300 includes a first semiconductor layer 310, an active layer 320 and a second semiconductor layer 330 stacked in sequence from top to bottom. The light-emitting diode of this embodiment is different from the first embodiment in that:

[0069] like Figure 4 As shown, corresponding to the non-electrode region 122, a plurality of protrusions 1222 are provided on the surface of the reflective layer 200 away from the substrate 100. The light-emitting diode of this embodiment is provided with protrusions 1222 on the surface of the reflective layer 200 away from the substrate 100, and the heat transfer contact area with the external heat dissipation medium is increased by the protrusions 1222, thereby effectively reducing the heat generated by the light-emitting diode and improving the working stability and reliability of the light-emitting diode.

[0070] The substrate 100 is a non-conductive substrate, and the material of the non-conductive substrate may be, for example, aluminum nitride, sapphire, etc.

[0071] In an optional embodiment, the distance between adjacent protrusions 1222 is greater than the maximum lateral dimension or the maximum longitudinal dimension in the cross section of a single protrusion 1222 .

[0072] In an optional embodiment, the surface of the protrusion 1222 facing away from the reflective layer 200 is at least flush with the surface of the semiconductor stack 300 facing away from the reflective layer 200, thereby improving the heat dissipation effect of the light-emitting diode and improving the working stability and reliability of the light-emitting diode.

[0073] In an optional embodiment, the electrode region 121 includes a first electrode 600 and a second electrode 700, the first electrode 600 is arranged on the surface of the reflective layer 200 away from the substrate 100, and the first electrode 600 is electrically connected to the reflective layer 200; from top to bottom, a through hole is arranged on the reflective layer 200 and the insulating layer 400 to penetrate the two, the through hole is terminated at the metal bonding layer 500, and the inner side wall of the through hole is sequentially arranged with the insulating layer 400 and the metal bonding layer 500 from the outside to the inside, that is, the insulating layer 400 is first arranged on the inner side wall of the through hole, and the metal bonding layer 500 is filled in the remaining space after the through hole is filled with the insulating layer 400, the metal bonding layer 500 passes through the through hole, and the height of the insulating layer 400 and the metal bonding layer 500 is equal to the sum of the heights of the insulating layer 400 and the reflective layer 200, and the second electrode 700 is arranged on the surface of the metal bonding layer 500 filled in the through hole away from the substrate 100. The first electrode 600 may be a P-type electrode, and the material of the first electrode 600 may be, for example, Ti, Pt, Ni, Au, etc. The material of the second electrode 700 may be, for example, Ti, Pt, Ni, Au, Sn, etc.

[0074] In an optional embodiment, a wavelength conversion layer (not shown in the figure) is disposed on the surface of the semiconductor stack 300 facing away from the reflective layer 200 , the surface and side surfaces of the protrusions 1222 , and between adjacent protrusions 1222 .

[0075] Embodiment 3

[0076] This embodiment provides a light emitting device, such as Figure 5 As shown, it includes a circuit board 10 and a plurality of light-emitting units 20 arranged on the circuit board 10, and the light-emitting unit 20 includes the light-emitting diode provided in the first or second embodiment. The light-emitting diode in the first or second embodiment forms a non-flat surface structure by forming a groove 1221 on the substrate 100 or a protrusion 1222 on the reflective layer 200, and transfers heat outward through the non-flat surface structure, thereby increasing the heat transfer contact area between the light-emitting diode and the external heat dissipation medium, effectively reducing the heat generated by the light-emitting diode, improving the heat dissipation efficiency of the light-emitting diode, and improving the working stability and reliability of the light-emitting diode. The light-emitting unit 20 of this embodiment is beneficial to improving the heat dissipation efficiency of the light-emitting device by adopting the light-emitting diode provided in the first or second embodiment.

[0077] The above-mentioned light-emitting device can be used for flashlights, lighting lamps, vehicle lighting, stage lights, etc. of handheld communication equipment, and can effectively improve the heat dissipation efficiency of the light-emitting device and improve the working stability and reliability of the light-emitting device.

[0078] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the technology may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed in the present invention shall still be covered by the claims of the present invention.

Claims

1. A light emitting diode, characterized in that: At least: A substrate having a first surface and a second surface, wherein the first surface includes a first area and a second area surrounding the first area; A reflective layer, the reflective layer is disposed on the first surface, and the reflective layer extends from the first area to the second area; corresponding to the second area, the surface of the reflective layer away from the substrate includes an electrode area and a non-electrode area; A semiconductor stack, corresponding to the first region, the semiconductor stack is arranged on a surface of the reflective layer away from the substrate; along a direction from the first surface to the second surface, the semiconductor stack includes a first semiconductor layer, an active layer, and a second semiconductor layer stacked in sequence; Wherein, corresponding to the non-electrode area, a surface of the reflective layer facing away from the substrate is provided with a plurality of protrusions; or, corresponding to the non-electrode area, a plurality of grooves are provided in the substrate, and the grooves penetrate the reflective layer and a part of the substrate.

2. The light emitting diode according to claim 1, characterized in that: The ratio of the area of ​​the first region to the total area of ​​the first region and the second region does not exceed 80%.

3. The light emitting diode according to claim 1, characterized in that: The distance between adjacent protrusions is greater than the maximum transverse dimension or the maximum longitudinal dimension in the cross section of a single protrusion; Alternatively, the distance between adjacent grooves is greater than the maximum transverse dimension or the maximum longitudinal dimension in the cross section of a single groove.

4. The light emitting diode according to claim 1, characterized in that: The surface of the protrusion facing away from the reflective layer is at least flush with the surface of the semiconductor stack facing away from the reflective layer.

5. The light emitting diode according to claim 1, characterized in that: Along the direction from the first surface to the second surface, an insulating layer and a metal bonding layer are sequentially stacked between the reflective layer and the substrate.

6. The light emitting diode according to claim 5, characterized in that: A plurality of conductive holes are provided in the semiconductor stack, and the conductive holes penetrate the second semiconductor layer, the active layer and a portion of the first semiconductor layer; The inner wall of the conductive hole is provided with the insulating layer and the metal bonding layer in sequence from the outside to the inside, and the metal bonding layer passes through the conductive hole and is electrically connected to the first semiconductor layer.

7. The light emitting diode according to claim 6, characterized in that: The electrode region includes a first electrode, and the first electrode is electrically connected to the reflective layer; A second electrode is disposed on the second surface of the substrate, and the second electrode is electrically connected to the metal bonding layer through the substrate; Corresponding to the non-electrode area, a plurality of grooves are arranged in the substrate along the direction from the first surface to the second surface, and the grooves penetrate the reflective layer, the insulating layer, the metal bonding layer and a portion of the substrate.

8. The light emitting diode according to claim 6, characterized in that: The electrode region includes a first electrode and a second electrode, the first electrode is disposed on a surface of the reflective layer away from the substrate, and the first electrode is electrically connected to the reflective layer; A through hole penetrating the reflective layer and the insulating layer is provided along a direction from the first surface to the second surface, the insulating layer and the metal bonding layer are sequentially provided on the inner wall of the through hole from the outside to the inside, the second electrode is provided on the surface of the metal bonding layer passing through the through hole, and the second electrode is electrically connected to the metal bonding layer; Corresponding to the non-electrode area, a plurality of protrusions are provided on the surface of the reflective layer away from the substrate.

9. The light emitting diode according to claim 1, characterized in that: A wavelength conversion layer is provided on the surface of the semiconductor stack facing away from the reflective layer; The wavelength conversion layer extends into the groove; or, the wavelength conversion layer extends to the surface and side surfaces of the protrusions, and between adjacent protrusions.

10. A light emitting device, characterized in that: It comprises a circuit board and a plurality of light-emitting units arranged on the circuit board, wherein the light-emitting units comprise the light-emitting diodes according to any one of claims 1 to 9.

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