Electrical characteristic detection device
By using contactless detection method with terahertz technology in the photovoltaic silicon wafer detection device, the high R&D cost problem caused by traditional testing methods is solved, and the lossless electrical characteristics detection of photovoltaic silicon wafers is realized.
Patent Information
- Application Number
- CN202421147185.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-05-23
- Publication Date
- 2025-02-25
- Estimated Expiration
- 2034-05-23
AI Technical Summary
Traditional electrical characteristics testing methods usually require contact measurement or destructive testing, and are not suitable for real-time monitoring and large-scale production, resulting in high research and development costs of solar cells.
Provide an electrical characteristic detection device, which uses terahertz technology to emit terahertz waves toward the photovoltaic silicon wafer through a contactless detection method, and receives terahertz waves transmitted and/or reflected through the silicon wafer, thereby converting it into Electrical characteristics parameters of photovoltaic silicon wafers.
Non-destructive testing of photovoltaic silicon wafers is realized, which avoids damage to the silicon wafers and reduces R&D and testing costs.
Smart Images
Figure CN222531663U_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the technical field of photovoltaic silicon wafer detection, and in particular to an electrical characteristic detection device. Background Art
[0002] Photovoltaic silicon wafers are the core components of solar cells, and their electrical characteristic parameters are crucial to the performance and efficiency of solar cells. Among them, the electrical characteristic parameters can be carrier resistivity, PN type, carrier lifetime, mobility, etc.
[0003] Traditional electrical characteristic testing methods usually require contact measurement or destructive testing, which is not suitable for real-time monitoring and large-scale production. For example, the four-probe method is the mainstream testing method for silicon wafers, which is a type of contact measurement. Therefore, the silicon wafers that have been tested cannot be used and can only be scrapped, resulting in high R&D costs for solar cells. Utility Model Content
[0004] The purpose of this application is to provide an electrical characteristics detection device to address the deficiencies in the above-mentioned prior art.
[0005] To achieve the above purpose, the technical solution adopted in the embodiment of the present application is as follows:
[0006] According to one aspect of an embodiment of the present application, an electrical characteristic detection device is provided, comprising a shell having an inner cavity, and a tray and a support frame arranged in the inner cavity, a detection component is arranged on the support frame, the detection component comprises a terahertz emitter and a terahertz detector, the tray has a test station for carrying a silicon wafer to be tested, the terahertz emitter is used to emit terahertz waves toward the silicon wafer to be tested in the test station, and the terahertz detector is used to receive the terahertz waves reflected and / or transmitted by the silicon wafer to be tested.
[0007] Optionally, the terahertz detector includes a terahertz transmission detector and a terahertz reflection detector arranged on a support frame, the terahertz transmission detector and the terahertz emitter are respectively located on opposite sides of the silicon wafer to be tested, and the terahertz reflection detector and the terahertz emitter are located on the same side of the silicon wafer to be tested, the terahertz transmission detector is used to receive terahertz waves transmitted by the silicon wafer to be tested, and the terahertz reflection detector is used to receive terahertz waves reflected by the silicon wafer to be tested.
[0008] Optionally, the tray has a hollow area located in the test station, and the terahertz wave emitted by the terahertz transmitter enters the silicon wafer to be tested through the hollow area.
[0009] Optionally, the support frame includes a first support arm and a second support arm connected to each other, the first support arm and the second support arm are distributed on opposite sides of the support tray, the terahertz transmission detector is connected to the first support arm, and the terahertz transmitter and the terahertz reflection detector are connected to the second support arm.
[0010] Optionally, an adjustment mechanism is provided on the inner wall of the shell, and the support frame is provided on the adjustment mechanism, and the adjustment mechanism is used to drive the terahertz emitter and the terahertz detector to move relative to the silicon wafer to be tested, so that the terahertz emitter and the terahertz detector scan the silicon wafer to be tested.
[0011] Optionally, the adjustment mechanism includes an X-axis adjustment component and a Y-axis adjustment component, the X-axis adjustment component is connected to the inner wall of the shell, the Y-axis adjustment component is arranged on the X-axis adjustment component, and the support frame is arranged on the Y-axis adjustment component.
[0012] Optionally, an electric control module and a driver are also provided in the shell, the electric control module is electrically connected to the driver, and the driver is drivingly connected to the adjustment mechanism. A partition plate is also provided in the shell, the supporting tray, the support frame and the adjustment mechanism are located on one side of the partition plate, and the electric control module is located on the other side of the partition plate.
[0013] Optionally, a plurality of detection components are arranged on the support frame, and the plurality of detection components are arranged along a straight line.
[0014] Optionally, a slot is provided on the shell, and the receiving tray is correspondingly inserted into the slot and slidably connected to the inner wall of the slot.
[0015] Optionally, an observation port corresponding to the test station is provided on the shell, an observation window is provided on the observation port, and a plurality of universal wheels are provided on the bottom of the shell.
[0016] The beneficial effects of this application include:
[0017] The present application provides an electrical characteristic detection device, including a shell with an inner cavity and a tray and a support frame arranged in the inner cavity, a detection component is arranged on the support frame, the detection component includes a terahertz transmitter and a terahertz detector, the tray has a test station for carrying a silicon wafer to be tested, the terahertz transmitter is used to emit terahertz waves toward the silicon wafer to be tested in the test station, and the terahertz detector is used to receive the terahertz waves reflected and / or transmitted by the silicon wafer to be tested. The electrical characteristic detection device of the present application uses a non-contact detection method to emit terahertz waves toward the photovoltaic silicon wafer, and receives the terahertz waves transmitted and / or reflected by the silicon wafer, so as to convert the electrical characteristic parameters of the photovoltaic silicon wafer at this position. Therefore, in the process of detecting the electrical characteristics of the photovoltaic silicon wafer, the present application can realize non-destructive testing and avoid damage to the photovoltaic silicon wafer, so as to effectively reduce the research and development and testing costs. BRIEF DESCRIPTION OF THE DRAWINGS
[0018] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.
[0019] Figure 1 One of the structural schematic diagrams of an electrical characteristic detection device provided in an embodiment of the present application;
[0020] Figure 2 A second structural diagram of an electrical characteristic detection device provided in an embodiment of the present application;
[0021] Figure 3 This is a third structural schematic diagram of an electrical characteristics detection device provided in an embodiment of the present application.
[0022] Icons: 100-housing; 101-observation window; 102-switch; 103-indicator light; 104-avoidance groove; 110-support tray; 111-hollow area; 120-electric control module; 130-partition plate; 140-adjustment mechanism; 141-X-axis adjustment assembly; 150-support frame; 151-first support arm; 152-second support arm; 160-terahertz detector; 161-terahertz transmission detector; 162-terahertz reflection detector; 170-slide rail; 180-terahertz transmitter; 190-universal wheel; 200-detection assembly. DETAILED DESCRIPTION
[0023] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. The components of the embodiments of the present application described and shown in the drawings here can be arranged and designed in various different configurations.
[0024] Therefore, the following detailed description of the embodiments of the present application provided in the accompanying drawings is not intended to limit the scope of the present application for protection, but merely represents selected embodiments of the present application. It should be noted that, in the absence of conflict, the various features in the embodiments of the present application can be combined with each other, and the combined embodiments are still within the scope of protection of the present application.
[0025] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, further definition and explanation thereof is not required in subsequent drawings.
[0026] In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, or the positions or positional relationships in which the product of the application is usually placed when in use. They are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific position, be constructed and operated in a specific position, and therefore cannot be understood as a limitation on the present application. In addition, the terms "first", "second", "third", etc. are only used to distinguish the description, and cannot be understood as indicating or implying relative importance.
[0027] In addition, the terms "horizontal", "vertical" and the like do not mean that the components are required to be absolutely horizontal or suspended, but can be slightly tilted. For example, "horizontal" only means that its direction is more horizontal than "vertical", and does not mean that the structure must be completely horizontal, but can be slightly tilted.
[0028] In the description of this application, it should also be noted that, unless otherwise clearly specified and limited, the terms "set", "install", "connect", and "connect" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.
[0029] In one aspect of the embodiment of the present application, an electrical characteristic detection device is provided. Figure 1 and Figure 2 As shown, it includes a shell 100, a supporting tray 110, a support frame 150 and a detection component 200, wherein the shell 100 has an inner cavity, so that the shell 100 can support and protect the internal components at the same time, thereby reducing external interference to the internal components during detection.
[0030] Please continue to refer to Figure 2As shown, the tray 110, the support frame 150 and the detection assembly 200 are all arranged in the inner cavity of the housing 100, wherein the tray 110 can be used to support the silicon wafer to be tested. Therefore, a position for placing the silicon wafer to be tested can be set on the tray 110, which is called a test station for ease of understanding. That is, after the silicon wafer to be tested is placed on the tray 110, it can be placed in the test station, which is convenient for the silicon wafer to be tested to be subsequently aligned with the detection assembly 200 to complete the detection. The support frame 150 is arranged on the inner wall of the housing 100, and the detection assembly 200 can be arranged on the support frame 150. In other words, the support frame 150 can carry the detection assembly 200, which is convenient for the detection assembly 200 to be in the target position in the inner cavity, and then aligned with the test station on the tray 110.
[0031] Please continue to refer to Figure 2 As shown, the detection component 200 includes a terahertz transmitter 180 and a terahertz detector 160 that are arranged in coordination, that is, the terahertz wave emitted by the terahertz transmitter 180 can be detected or received by the terahertz detector 160 . Specifically, the terahertz transmitter 180 can be aligned with the silicon wafer to be tested in the test station, so that the terahertz wave emitted by the terahertz transmitter 180 can propagate toward the silicon wafer to be tested in the test station. After the terahertz wave reaches the silicon wafer to be tested, a part of it will be transmitted through the silicon wafer to be tested, and the other part will be reflected by the silicon wafer to be tested. Therefore, the terahertz detector 160 can be set in the transmission path and / or the reflection path. For example, by setting the terahertz detector 160 in the transmission path, the terahertz wave transmitted by the silicon wafer to be tested can be received by the terahertz detector 160; for another example, by setting the terahertz detector 160 on the reflection path, the terahertz wave reflected by the silicon wafer to be tested can be received by the terahertz detector 160; for another example, by setting the terahertz detector 160 on the transmission path and the reflection path respectively, the terahertz detector 160 can receive both the terahertz wave transmitted by the silicon wafer to be tested and the terahertz wave reflected by the silicon wafer to be tested. In this way, the terahertz wave reflected and / or transmitted by the silicon wafer to be tested is received by the terahertz detector 160, and the electrical characteristics of the silicon wafer to be tested can be converted into the corresponding signal of the received terahertz wave.
[0032] It is understandable that the electrical characteristic detection device of the present application adopts the time domain terahertz technology, and infers the electrical characteristic parameters such as carrier resistivity, PN type, carrier lifetime, mobility, etc. by measuring the changes in the transmission amplitude and reflection amplitude of the terahertz wave on the photovoltaic silicon wafer. For example, the main principle of obtaining the electrical characteristics of the silicon wafer to be tested based on the transmission of the terahertz wave is that the different electrical characteristics of the silicon wafer to be tested have different effects on the attenuation of the terahertz wave. After the terahertz wave emitted by the terahertz transmitter 180 irradiates the silicon wafer to be tested, the electrical characteristics inside the silicon wafer are unevenly distributed, so the attenuation degree of the terahertz wave is also different. The terahertz detector 160 detects that the energy of the terahertz wave at different positions of the silicon wafer after penetrating the silicon wafer is also different. The detected energy data is recorded, and the electrical characteristics such as the resistivity and PN type of the silicon wafer are calculated according to a specific algorithm.
[0033] In summary, the electrical characteristic detection device of the present application uses a non-contact detection method to emit terahertz waves toward the photovoltaic silicon wafer, and receives the terahertz waves transmitted and / or reflected by the silicon wafer, thereby correspondingly converting the electrical characteristic parameters of the photovoltaic silicon wafer at this position. Therefore, in the process of detecting the electrical characteristics of the photovoltaic silicon wafer, the present application can achieve non-destructive testing and avoid damage to the photovoltaic silicon wafer, thereby effectively reducing the R&D and testing costs.
[0034] Optionally, the terahertz detector 160 includes a terahertz transmission detector 161 and a terahertz reflection detector 162 arranged on the support frame 150, the terahertz transmission detector 161 and the terahertz emitter 180 are respectively located on opposite sides of the silicon wafer to be tested, and the terahertz reflection detector 162 and the terahertz emitter 180 are located on the same side of the silicon wafer to be tested, the terahertz transmission detector 161 is used to receive the terahertz wave transmitted by the silicon wafer to be tested, and the terahertz reflection detector 162 is used to receive the terahertz wave reflected by the silicon wafer to be tested.
[0035] like Figure 2 As shown, the terahertz transmission detector 161 and the terahertz transmitter 180 are respectively located at the upper and lower sides of the silicon wafer to be tested, and the terahertz reflection detector 162 and the terahertz transmitter 180 are located below the silicon wafer to be tested. When the terahertz transmitter 180 sends a terahertz wave toward the silicon wafer to be tested and the terahertz wave reaches the silicon wafer to be tested, a part of the terahertz wave is transmitted through the silicon wafer to be tested and is received by the terahertz transmission detector 161 above, and the other part of the terahertz wave is reflected by the silicon wafer to be tested and is received by the terahertz reflection detector 162. Therefore, according to the amplitude changes of the terahertz waves received by the terahertz transmission detector 161 and the terahertz reflection detector 162, the electrical characteristic parameters of the silicon wafer to be tested at this position can be obtained accordingly.
[0036] Alternatively, if Figure 2As shown, the tray 110 has a hollow area 111 located in the test station, so that the terahertz wave emitted by the terahertz transmitter 180 can directly enter the silicon wafer to be tested through the hollow area 111, which helps to obtain better detection results and avoid the tray 110 affecting the detection accuracy.
[0037] Optionally, the support frame 150 includes a first support arm 151 and a second support arm 152 connected to each other, the first support arm 151 and the second support arm 152 are distributed on opposite sides of the support tray 110, the terahertz transmission detector 161 is connected to the first support arm 151, and the terahertz emitter 180 and the terahertz reflection detector 162 are connected to the second support arm 152.
[0038] like Figure 3 As shown, one end of the first support arm 151 and the second support arm 152 can be connected to each other through a connecting rod to form a C-shaped bracket, and the first support arm 151 can be located above the support tray 110, and the second support arm 152 can be located below the support tray 110. In this way, it is convenient to set the terahertz transmission detector 161 on the first support arm 151, and the terahertz emitter 180 and the terahertz reflection detector 162 are set together on the second support arm 152, and it is also convenient to insert the support tray 110 between the first support arm 151 and the second support arm 152 through the open side of the C-shaped bracket.
[0039] Alternatively, if Figure 2 and Figure 3 As shown, an adjustment mechanism 140 is provided on the inner wall of the shell 100, and a support frame 150 is provided on the adjustment mechanism 140, thereby the support frame 150 can be driven to move through the adjustment mechanism 140, and then the terahertz transmitter 180 and the terahertz detector 160 on the support frame 150 move relative to the silicon wafer to be tested, and the terahertz detector 160 continuously detects the transmission and reflection energy of the terahertz wave, and performs detection data imaging according to the detected array data and realizes the electrical characteristics presentation by using an algorithm, thereby realizing the scanning detection of the silicon wafer to be tested by the terahertz transmitter 180 and the terahertz detector 160, and finally the scanned data of all areas of the entire silicon wafer are added to the above-mentioned picture to draw a complete picture.
[0040] Alternatively, if Figure 2 and Figure 3As shown, the adjustment mechanism 140 includes an X-axis adjustment component 141 and a Y-axis adjustment component. The X-axis adjustment component 141 is connected to the inner wall of the housing 100, the Y-axis adjustment component is arranged on the X-axis adjustment component 141, and the support frame 150 is arranged on the Y-axis adjustment component. The support frame 150 can be moved in the X-axis direction through the X-axis adjustment component 141, and the support frame 150 can be moved in the Y-axis direction through the Y-axis adjustment component. Therefore, through the comprehensive adjustment of the X-axis adjustment component 141 and the Y-axis adjustment component, the detection component 200 can be scanned in a two-dimensional plane, that is, the plane where the silicon wafer to be tested is located is scanned, so as to obtain a complete image.
[0041] Specifically, Figure 2 As shown, the X-axis adjustment assembly 141 may include an adjustment track fixedly disposed on the housing 100, a slider slidably disposed on the adjustment track, the adjustment track extends along the X-axis, the Y-axis adjustment assembly is fixed to the slider, and the slider is made to slide along the adjustment track to achieve the position adjustment of the support frame 150 on the X-axis. The specific structure of the Y-axis adjustment assembly can be set in the same way, and this application will not repeat it in detail.
[0042] In order to improve the stability of the adjustment, two X-axis adjustment components 141 arranged side by side may be provided.
[0043] Alternatively, if Figure 2 As shown, an electric control module 120 and a driver are also provided in the housing 100. The electric control module 120 is electrically connected to the driver, and the driver is drivingly connected to the adjustment mechanism 140. The driver can be a motor, so that the upper computer can send instructions to the electric control module 120, and then the electric control module 120 controls the motor to start according to the instructions, thereby realizing the adjustment of the X-axis adjustment component 141 and the Y-axis adjustment component.
[0044] The main process is: put the silicon wafer to be tested into the tray 110, the user selects the silicon wafer size, thickness and scanning step (that is, the millimeter interval at which the energy data of a certain area of the silicon wafer is collected, and the area depends on the focal length of the terahertz module lens). After the setting is completed, the software controls the motor to move continuously in a linear reciprocating manner according to the set step, and collects energy data once every step distance, and then draws the data collected in a single movement (terahertz energy insertion loss) into a column of images, and finally adds the scanned data of all areas of the entire silicon wafer to the above-mentioned picture to draw a complete picture.
[0045] Alternatively, if Figure 2 As shown, a partition plate 130 is also provided in the shell 100, the supporting tray 110, the support frame 150 and the adjustment mechanism 140 are located on one side of the partition plate 130, and the electric control module 120 is located on the other side of the partition plate 130, thereby being able to isolate each other, reduce interference and facilitate layout.
[0046] Alternatively, if Figure 2 As shown, a plurality of detection components 200 are disposed on the support frame 150, and the plurality of detection components 200 are arranged along a straight line. Thus, the plurality of detection components 200 can simultaneously detect a plurality of positions of the silicon wafer to be detected, thereby improving the scanning speed.
[0047] Alternatively, if Figure 1 and Figure 2 As shown, a slot is provided on the housing 100, and the tray 110 is correspondingly inserted into the slot and slidably connected to the inner wall of the slot. Specifically, the tray 110 can be slidably connected to the housing 100 through a slide rail 170 on the inner wall of the slot.
[0048] Alternatively, if Figure 1 As shown, an escape groove 104 is further provided on the side of the slot, so that the user can pull the receiving tray 110 out of the slot through the escape groove 104 .
[0049] Alternatively, if Figure 1 and Figure 2 As shown, an observation port corresponding to the test station is provided on the housing 100 , and an observation window 101 is provided on the observation port to cover the observation port, so that the user can observe the detection status of the silicon wafer to be tested through the observation window 101 .
[0050] Optionally, to facilitate mobility, e.g. Figure 3 As shown, a plurality of universal wheels 190 are provided at the bottom of the housing 100 .
[0051] Optionally, a switch 102 is provided on the housing 100, and whether the electrical characteristic detection device is powered on can be controlled by the switch 102. Correspondingly, an indicator light 103 is also provided on the housing 100, and the indicator light 103 can be used to indicate whether the electrical characteristic detection device is powered on and the working status.
[0052] The above description is only the preferred embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims
1. An electrical characteristics detection device, characterized in that: The invention comprises a shell with an inner cavity, and a tray and a support frame arranged in the inner cavity, a detection component is arranged on the support frame, and the detection component comprises a terahertz transmitter and a terahertz detector, the tray has a test station for carrying a silicon wafer to be tested, the terahertz transmitter is used to emit terahertz waves toward the silicon wafer to be tested in the test station, and the terahertz detector is used to receive the terahertz waves reflected and / or transmitted by the silicon wafer to be tested.
2. The electrical characteristics detection device according to claim 1, characterized in that: The terahertz detector includes a terahertz transmission detector and a terahertz reflection detector which are arranged on the support frame. The terahertz transmission detector and the terahertz emitter are respectively located on opposite sides of the silicon wafer to be tested, and the terahertz reflection detector and the terahertz emitter are located on the same side of the silicon wafer to be tested. The terahertz transmission detector is used to receive the terahertz wave transmitted by the silicon wafer to be tested, and the terahertz reflection detector is used to receive the terahertz wave reflected by the silicon wafer to be tested.
3. The electrical characteristics detection device according to claim 2, characterized in that: The tray has a hollow area located in the test station, and the terahertz wave emitted by the terahertz transmitter enters the silicon wafer to be tested through the hollow area.
4. The electrical characteristics detection device according to claim 2, characterized in that: The support frame includes a first support arm and a second support arm connected to each other, wherein the first support arm and the second support arm are distributed on opposite sides of the support tray, the terahertz transmission detector is connected to the first support arm, and the terahertz transmitter and the terahertz reflection detector are connected to the second support arm.
5. The electrical characteristics detection device according to any one of claims 1 to 4, characterized in that: An adjustment mechanism is arranged on the inner wall of the shell, the support frame is arranged on the adjustment mechanism, and the adjustment mechanism is used to drive the terahertz transmitter and the terahertz detector to move relative to the silicon wafer to be tested, so that the terahertz transmitter and the terahertz detector scan the silicon wafer to be tested.
6. The electrical characteristics detection device according to claim 5, characterized in that: The adjustment mechanism includes an X-axis adjustment component and a Y-axis adjustment component. The X-axis adjustment component is connected to the inner wall of the shell, the Y-axis adjustment component is arranged on the X-axis adjustment component, and the support frame is arranged on the Y-axis adjustment component.
7. The electrical characteristics detection device according to claim 5, characterized in that: An electric control module and a driver are also provided in the shell, wherein the electric control module is electrically connected to the driver, and the driver is drivingly connected to the adjustment mechanism. A partition plate is also provided in the shell, wherein the support tray, the support frame and the adjustment mechanism are located on one side of the partition plate, and the electric control module is located on the other side of the partition plate.
8. The electrical characteristics detection device according to any one of claims 1 to 4, characterized in that: A plurality of the detection components are arranged on the support frame, and the plurality of the detection components are arranged along a straight line.
9. The electrical characteristics detection device according to any one of claims 1 to 4, characterized in that: A slot is provided on the shell, and the receiving tray is correspondingly inserted into the slot and slidably connected with the inner wall of the slot.
10. The electrical characteristics detection device according to any one of claims 1 to 4, characterized in that: An observation port corresponding to the test station is also provided on the shell, an observation window is provided on the observation port, and a plurality of universal wheels are provided at the bottom of the shell.