LED device for backlight source

Abstract

The utility model relates to the field of light-emitting devices, and discloses an LED device for a backlight source, the LED device comprises a support, an LED chip with the surface plated with a distributed Bragg reflection layer, a surrounding part and a packaging body, the packaging body is hemispherical, and the light-emitting angle range of the LED chip with the surface plated with the distributed Bragg reflection layer is 150-160 degrees; the LED chip of which the surface is plated with a distributed Bragg reflection layer, the enclosure part and the packaging body are fixed on the bracket; the surrounding part surrounds the periphery of the LED chip of which the surface is plated with the distributed Bragg reflection layer; the packaging body covers the surface, away from the support, of the LED chip, wherein the surface of the LED chip is plated with the distributed Bragg reflection layer. The LED chip with the light-emitting angle ranging from 150 degrees to 160 degrees is matched with the hemispherical packaging body, the effect of a lens is achieved, the light-emitting angle of the device can reach 180 degrees, the light-emitting angle of the light-emitting device is increased, other lenses do not need to be matched, the size is small, and the display device can be light and thin.

Description

Technical Field

[0001] The present application relates to the field of light emitting devices, and in particular to an LED device used for a backlight source. Background Art

[0002] LED (Light Emitting Diode) is a semiconductor component, known as the fourth generation lighting source or green light source, with the characteristics of energy saving, environmental protection, long life and small size. At present, LED light-emitting devices are widely used in the backlight source of televisions and monitors. As the market pursues economic and energy-saving development requirements, LED light-emitting devices as backlight sources pursue high power and lightness.

[0003] At present, the light-emitting angle of LED light-emitting devices is generally only about 120°. The light-emitting angle is relatively small, the light mixing distance cannot be reduced, and the precision of light control can only reach the regional level. At the junction of some light and dark parts, there will still be halo phenomena caused by excessive light control partitions and light leakage, which limits the thinness of TVs and monitors. In order to solve the problem of small light-emitting angle, traditional lenses can be used. When light hits the inner wall of the lens, it is refracted, and the angle is magnified after refraction, thereby effectively expanding the light-emitting angle. However, when used as a backlight source for a display device, it still makes it impossible for the display device to be thin and light.

[0004] Therefore, how to solve the above technical problems should be the focus of technical personnel in this field. Utility Model Content

[0005] The purpose of the present application is to provide an LED device for a backlight source to increase the light emission angle.

[0006] In order to solve the above technical problems, the present application provides an LED device for a backlight source, comprising:

[0007] A bracket, an LED chip with a distributed Bragg reflector layer coated on the surface, a blocking component and a package body, wherein the package body is hemispherical, and the light emitting angle range of the LED chip with a distributed Bragg reflector layer coated on the surface is 150° to 160°;

[0008] The LED chip with a distributed Bragg reflection layer coated on the surface, the enclosure component and the packaging body are fixed on the bracket; the enclosure component surrounds the LED chip with a distributed Bragg reflection layer coated on the surface; the packaging body covers the surface of the LED chip with a distributed Bragg reflection layer coated on the surface away from the bracket.

[0009] Optionally, also include:

[0010] A metal wire is used to connect the LED chip with a distributed Bragg reflection layer plated on the surface and the bracket.

[0011] Optionally, the bonding adhesive between the LED chips and between the LED chips with distributed Bragg reflection layers coated on their surfaces is a silicon-based bonding adhesive.

[0012] Optionally, the metal wire is a gold wire.

[0013] Optionally, the LED chip with a distributed Bragg reflection layer coated on its surface is flip-chip fixed on the bracket.

[0014] Optionally, the target height range of the package body is 0.2 mm to 1.0 mm, wherein the target height is from the highest point of the package body to the inner edge of the enclosure component.

[0015] Optionally, the inner wall of the enclosure component is an inclined surface.

[0016] Optionally, in the LED chip with a distributed Bragg reflector layer coated on the surface, the distributed Bragg reflector layer includes a stack of alternately distributed silicon dioxide layers and titanium oxide layers.

[0017] Optionally, the stent includes a PPA stent, a PCT stent, and a ceramic stent.

[0018] Optionally, the package body is a transparent package body.

[0019] The present application provides an LED device for a backlight source, comprising: a bracket, an LED chip with a distributed Bragg reflector layer coated on the surface, an enclosure component and a package body, wherein the package body is hemispherical, and the light-emitting angle range of the LED chip with a distributed Bragg reflector layer coated on the surface is 150° to 160°; the LED chip with a distributed Bragg reflector layer coated on the surface, the enclosure component and the package body are fixed on the bracket; the enclosure component surrounds the LED chip with a distributed Bragg reflector layer coated on the surface; and the package body covers the surface of the LED chip with a distributed Bragg reflector layer coated on the surface away from the bracket.

[0020] It can be seen that the LED device used for the backlight source of the present application includes: a bracket, an LED chip with a distributed Bragg reflector layer coated on the surface, a surrounding component and a package. The light-emitting angle of the LED chip with a distributed Bragg reflector layer coated on the surface is 150° to 160°, which is relatively large. In addition, when used with a hemispherical package, a lens effect is achieved, so that the light-emitting angle of the light-emitting device can reach 180°. The light-emitting angle of the light-emitting device is significantly increased, and no other lenses are required. The volume is small, and when used in a display device, the display device can be made thinner and lighter. At the same time, the mixing distance can be shortened, the precision of light control can be increased, the number of chips can be reduced, and the cost can be reduced. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the embodiments of the present application or the technical solutions of the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0022] Figure 1 A schematic diagram of an LED device for a backlight source provided in an embodiment of the present application Figure 1 ;

[0023] Figure 2 A schematic diagram of an LED device for a backlight source provided in an embodiment of the present application Figure 2 ;

[0024] In the figure, 1. bracket, 2. LED chip with distributed Bragg reflection layer coated on the surface, 3. enclosure component, 4. package body, 5. metal wire. DETAILED DESCRIPTION

[0025] In order to enable those skilled in the art to better understand the present application, the present application is further described in detail below in conjunction with the accompanying drawings and specific implementation methods. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in the field without making creative work are within the scope of protection of the present application.

[0026] In the following description, many specific details are set forth to facilitate a full understanding of the present invention, but the present invention may also be implemented in other ways different from those described herein, and those skilled in the art may make similar generalizations without violating the connotation of the present invention. Therefore, the present invention is not limited to the specific embodiments disclosed below.

[0027] As described in the background technology section, the current light-emitting angle of LED devices is generally only about 120°, which is relatively small. The light-emitting angle can be increased by using a traditional lens, but when used as a backlight source for a display device, the display device cannot be made thin and light.

[0028] In view of this, the present application provides an LED device for a backlight source, please refer to Figure 1 and Figure 2 ,include:

[0029] A bracket 1, an LED chip 2 with a distributed Bragg reflector layer coated on the surface, a blocking component 3 and a package 4, wherein the package 4 is hemispherical, and the light emitting angle range of the LED chip 2 with a distributed Bragg reflector layer coated on the surface is 150° to 160°;

[0030] The LED chip 2 with a distributed Bragg reflection layer coated on the surface, the enclosure component 3 and the packaging body 4 are fixed on the bracket 1; the enclosure component 3 surrounds the LED chip 2 with a distributed Bragg reflection layer coated on the surface; the packaging body 4 covers the surface of the LED chip 2 with a distributed Bragg reflection layer coated on the surface away from the bracket 1.

[0031] The specific structure of the LED chip 2 with a distributed Bragg reflection layer coated on the surface can be referred to the relevant technology, and will not be described in detail in this application.

[0032] As an implementation method, in the LED chip 2 with a distributed Bragg reflector layer coated on the surface, the distributed Bragg reflector layer includes a stack of alternately distributed silicon dioxide layers and titanium oxide layers.

[0033] The total number of silicon dioxide layers and titanium oxide layers in the distributed Bragg reflector layer ranges from 10 to 30 layers.

[0034] The distributed Bragg reflector is distributed on the surface of the LED chip, but the electrode of the chip needs to be exposed so that the electrode of the chip can be electrically connected to the bracket 1. Since the distributed Bragg reflector is distributed on the surface of the LED chip, the light is partially blocked and emitted from the side, which increases the light emission angle by about 10°.

[0035] The light-emitting angle of the LED chip 2 coated with a distributed Bragg reflection layer on the surface ranges from 150° to 160°. For example, the light-emitting angle can be 150°, 152°, 154°, 156°, 158°, 160°, etc.

[0036] It should be noted that the present application does not limit the type of the stent 1, and the stent can be selected at will. For example, the stent 1 includes but is not limited to a PPA (Polyphthalamide) stent, a PCT (Poly 1,4-cyclohexylenedimethylene terephthalate) stent, and a ceramic stent.

[0037] The height of the bracket 1 may range from 0.45T to 0.7T, for example, the height may be 0.45T, 0.55T, 0.65T, 0.7T, etc.

[0038] The enclosure component 3 surrounds the LED chip 2 with a distributed Bragg reflection layer on the surface, forming a certain cavity with the surface of the substrate. A part of the package 4 is in the cavity, and a part is higher than the enclosure component 3 and outside the cavity. The surface of the part of the package higher than the enclosure component 3 is a curved surface.

[0039] The package body 4 is hemispherical, such as Figure 1 The package 4 includes phosphors, which may be yttrium aluminum garnet (YAG) phosphors, nitride YR phosphors, β-Sialon (β-Sialon) G+R phosphors, etc., where G represents green, R represents red, and Y represents yellow.

[0040] As an implementable embodiment, the package body 4 is a transparent package body to enhance the light output of the LED device.

[0041] As an implementation method, Figure 1 As shown, the target height range of the package body 4 is 0.2 mm to 1.0 mm, wherein the target height is from the highest point of the package body 4 to the inner edge of the enclosure component 3. For example, the target height of the package body 4 can be 0.2 mm, 0.5 mm, 0.8 mm, 1.0 mm, etc.

[0042] The LED chip 2 with a distributed Bragg reflection layer plated on the surface is fixed on the bracket 1 by a die-bonding adhesive.

[0043] The manner in which the LED chip 2 with a distributed Bragg reflection layer coated on the surface is fixed on the bracket 1 is not limited in this application and depends on the circumstances.

[0044] As an implementation method, Figure 2 As shown, the LED chip 2 with a distributed Bragg reflector layer on the surface is flip-chip fixed on the bracket 1. At this time, the bonding glue between the LED chip 2 with a distributed Bragg reflector layer on the surface and the bracket 1 is a conductive bonding glue, which can be solder paste, conductive glue, etc.

[0045] As another possible implementation method, the LED chip 2 with a distributed Bragg reflector layer coated on the surface is fixed on the bracket 1 in a normal manner. At this time, the bonding adhesive between the LED chip 2 with a distributed Bragg reflector layer coated on the surface and the bracket 1 is an insulating bonding adhesive, which can be an epoxy resin bonding adhesive, a silicon bonding adhesive, etc.

[0046] In one embodiment of the present application, the bonding adhesive between the LED chips 2 and the LED chips 2 with distributed Bragg reflector layers on their surfaces is a silicon-based bonding adhesive, which has high thermal conductivity and is beneficial to the heat dissipation of LED devices.

[0047] When the LED chip 2 with a distributed Bragg reflection layer plated on the surface is mounted upright on the bracket 1, the LED device used for the backlight source may further include:

[0048] A metal wire 5 , wherein the metal wire 5 connects the LED chip 2 with a distributed Bragg reflection layer plated on the surface thereof and the bracket 1 .

[0049] One end of the metal wire 5 is connected to the electrode of the LED chip 2 with a distributed Bragg reflection layer plated on the surface, and the other end is connected to the electrode on the bracket 1.

[0050] It should be noted that the type of metal wire 5 is not limited in the present application and can be selected at will. As an implementation method, the metal wire 5 is a gold wire, which has excellent conductivity. The purity of the gold wire is above 99.99%, and the wire diameter of the gold wire can range from 0.7 mil (mil) to 1.2 mil (mil). For example, the wire diameter of the gold wire can be 0.7 mil, 0.8 mil, 0.9 mil, 1.0 mil, 1.1 mil, 1.2 mil, etc.

[0051] The LED device used for the backlight source of this embodiment includes: a bracket 1, an LED chip 2 with a distributed Bragg reflector layer coated on the surface, a blocking component 3, and a package 4. The LED chip 2 with a distributed Bragg reflector layer coated on the surface has a light-emitting angle of 150° to 160°, which is relatively large, and is matched with a package 4 with a hemispherical shape to achieve a lens effect, so that the light-emitting angle of the light-emitting device can reach 180°, and the light-emitting angle of the light-emitting device is significantly increased, and no other lenses are required. The volume is small, and when used in a display device, the display device can be made thinner and lighter, and at the same time, the light mixing distance can be shortened, the precision of light control can be increased, the number of chips can be reduced, and the cost can be reduced.

[0052] On the basis of any of the above embodiments, in one embodiment of the present application, in an LED device for a backlight source, the inner wall of the enclosure component 3 is an inclined surface.

[0053] Please refer to Figure 1 and Figure 2 The inner wall of the enclosure component 3 is the surface on the side opposite to the LED chip 2 coated with a distributed Bragg reflection layer. The inner wall is an inclined surface to increase the light extraction efficiency of the LED device.

[0054] The following describes the manufacturing process of the LED device used for the backlight source in the present application by taking the LED chip with a distributed Bragg reflection layer coated on the surface as an example.

[0055] The first step is to preheat the bracket at a temperature of 100°C for 1 hour.

[0056] The second step is to apply a bonding adhesive to the bracket, and then place the LED chip with a distributed Bragg reflection layer on the surface on the bonding adhesive;

[0057] The third step is to bake the die-bonding adhesive to fix the LED chip with the distributed Bragg reflection layer on the surface on the bracket, the baking temperature is 150° C., and the baking time is 2 hours;

[0058] The fourth step is wire bonding, connecting the metal wire between the LED chip with a distributed Bragg reflector layer on the surface and the bracket. The wire bonding method can be BBOS (bonding ball on stitch, planting balls on two solder joints) or BSOB (BondStitch on Ball, soldering balls at both ends);

[0059] The fifth step is to set the enclosure parts, apply glue, and bake again. The baking process is: first, the baking temperature is 80°C, the baking time is 1 hour, and then the baking temperature is 150°C, and the baking time is 1 to 4 hours;

[0060] Among them, after the bracket is dehumidified, the glue dispensing must be completed within 2 hours. The specific glue dispensing process is: use transparent silicone glue, A / B two-component, mix evenly according to a fixed ratio (for example, 1:3, 1:10 or 1:4), and perform glue dispensing after degassing; the glue dispensing height is 0.2~1.0mm, and pre-baking is performed after glue dispensing, the condition is: 150℃ / 10min; after pre-baking, long baking is performed, the baking conditions are: baking temperature is 80℃, baking time is 1 hour + baking temperature is 150℃, baking time is 1~4 hours, and the long baking is completed;

[0061] Step 6: Appearance inspection;

[0062] Step 7: Peel loose particles;

[0063] Step 8: Test and package.

[0064] The various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referenced to each other.

[0065] The LED device for backlight provided by the present application is introduced in detail above. The principle and implementation method of the present application are described in detail using specific examples herein. The description of the above embodiments is only used to help understand the method and core idea of ​​the present application. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made to the present application without departing from the principle of the present application, and these improvements and modifications also fall within the scope of protection of the claims of the present application.

Claims

1. An LED device for a backlight source, characterized in that: include: A bracket, an LED chip with a distributed Bragg reflector layer coated on the surface, a blocking component and a package body, wherein the package body is hemispherical, and the light emitting angle range of the LED chip with a distributed Bragg reflector layer coated on the surface is 150° to 160°; The LED chip with a distributed Bragg reflection layer coated on the surface, the enclosure component and the packaging body are fixed on the bracket; the enclosure component surrounds the LED chip with a distributed Bragg reflection layer coated on the surface; the packaging body covers the surface of the LED chip with a distributed Bragg reflection layer coated on the surface away from the bracket.

2. The LED device for backlight source according to claim 1, characterized in that: Also includes: A metal wire is used to connect the LED chip with a distributed Bragg reflection layer plated on the surface and the bracket.

3. The LED device for backlight source according to claim 2, characterized in that: The bonding adhesive between the bracket and the LED chip with a distributed Bragg reflection layer plated on the surface is a silicon-based bonding adhesive.

4. The LED device for backlight source according to claim 2, characterized in that: The metal wire is a gold wire.

5. The LED device for backlight source according to claim 1, characterized in that: The LED chip with a distributed Bragg reflection layer plated on its surface is flip-chip fixed on the bracket.

6. The LED device for backlight source according to claim 1, characterized in that: The target height range of the package body is 0.2 mm to 1.0 mm, wherein the target height is from the highest point of the package body to the inner edge of the enclosure component.

7. The LED device for backlight source according to claim 1, characterized in that: The inner wall of the enclosure component is an inclined surface.

8. The LED device for backlight source according to claim 1, characterized in that: In the LED chip with a distributed Bragg reflection layer plated on the surface, the distributed Bragg reflection layer includes a stack of silicon dioxide layers and titanium oxide layers alternately distributed.

9. The LED device for backlight source according to claim 1, characterized in that: The stents include PPA stents, PCT stents, and ceramic stents.

10. The LED device for backlight source according to any one of claims 1 to 9, characterized in that: The packaging body is a transparent packaging body.

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