Planar cathode for film coating and film coating equipment

Abstract

The utility model relates to the technical field of material surface coating, in particular to a plane cathode for coating and coating equipment, which comprises a cathode base, a magnet component arranged in the cathode base, a target horizontally arranged on the cathode base, a gas channel arranged beside the cathode base, and working gas output from the gas channel. Outlets of the gas channels are uniformly formed in the length direction of the target material; according to the utility model, the gas channel for inputting the working gas is combined with the planar cathode, and meanwhile, the working gas input into the gas channel can be uniformly output along the length direction of the target material, so that plasmas in the working gas are uniformly distributed on the surface of the target material, and the thickness of a sputtered and deposited film is uniform; the film forming thickness can be indirectly regulated and controlled by regulating and controlling circulation of working gas in the gas channel, vacuum breaking is not needed, meanwhile, the structure is simple, it can be effectively guaranteed that the thickness of a base plane formed film is even and flat, and the film coating quality and efficiency of film coating equipment are effectively improved.

Description

Technical Field

[0001] The utility model relates to the technical field of material surface coating, and specifically provides a plane cathode and coating equipment used for coating. Background Art

[0002] The planar cathode is an electrode design in vacuum coating technology, generally used in sputtering coating process. After the target material is set on the planar cathode, it is placed in a magnetic field. When the gas in the vacuum chamber is ionized, the positively charged gas ions (such as argon ions) collide with the target surface under the action of the cathode magnetic field, and the atoms on the target are sputtered out. The sputtered atoms then fly in the vacuum and deposit on the substrate material to form a thin film.

[0003] In the prior art, the working gas is input on one side of the planar cathode. Due to factors such as gas pressure, ion density in the gas or magnetic field strength, the thickness of the plated film may be uneven. Usually, the magnetic field size in the corresponding area is adjusted by adjusting the distance between the magnetic poles in the flat cathode, thereby adjusting the film thickness at the corresponding position. However, when using this method, it is necessary to break the vacuum and repeatedly disassemble the cathode; and the difficulty and cost of manufacturing and production are also increased sharply when the structure is set to automatically adjust the position of the magnetic poles. Therefore, a planar cathode and coating equipment are designed to ensure uniform film thickness by arranging and regulating the input form of the working gas. Utility Model Content

[0004] The utility model provides a planar cathode for film coating and film coating equipment, which can ensure uniform film thickness of the film coating by rearranging and adjusting the input form of working gas.

[0005] The technical solution of the utility model is as follows:

[0006] A planar cathode for coating comprises a cathode base, wherein a magnet is arranged inside the cathode base, a target material is horizontally arranged on the cathode base, a gas channel is arranged beside the cathode base, working gas is outputted in the gas channel, and the outlet of the gas channel is evenly arranged along the length direction of the target material.

[0007] It should be noted that in the prior art, the input working gas is generally sprayed through a specially set nozzle on one side of the target material. The working gas set in this way cannot be evenly distributed on the surface of the target material, and has airflow fluctuations. At the same time, it is easy for the flight direction of the particles sputtered from the target material to follow the cosine distribution. The larger the target material, the easier it is to form a film with uneven thickness.

[0008] However, in this solution, the gas channel for supplying the working gas is set together with the planar cathode, and the flow direction of the output working gas is parallel to the surface of the gas target. By delivering a smooth and uniform working gas to the surface of the target on the planar cathode, it is ensured that the working gas can be ionized, and the electrons therein are more likely to form magnetic traps in the magnetic field generated by the magnet assembly, ensuring that the density of the plasma on the surface of the target is evenly distributed, so that the thickness of the sputtering deposited film is uniform. In addition, in the complete sputtering coating process using this solution, there is no need to set up an additional working gas supply pipe, and the sputtering coating of the target can be completed by relying solely on the working gas in the gas channel.

[0009] Preferably, a flow dividing unit is provided in the gas channel, and the flow dividing unit divides an input channel into a plurality of channel outputs.

[0010] Preferably, the diversion units are arranged in multiple stages, and the output channel of the diversion unit of the previous stage is connected to the input channel of the diversion unit of the next stage.

[0011] Preferably, the diversion unit adopts a binary structure, and the multiple channel outlets formed by the final binary division of the gas channel are evenly spaced.

[0012] In this scheme, the gas channel is set to consist of multiple diversion units, such as branch-like branches divided into multiple channels step by step, and each level of the gas channel is divided into two gas channels, ultimately achieving the effect of inputting a large flow of gas from the gas channel and evenly outputting a small flow of gas from multiple channel outlets. At the same time, the channel outlets are also evenly arranged along the length of the target material to ensure the uniform thickness of the formed film layer. Compared with the setting of setting air holes at intervals on the wall of the gas channel for gas outlet, the design of this scheme can ensure that the working gas density, pressure, etc. output by each air hole are the same.

[0013] Preferably, the gas channels are symmetrically arranged on both sides of the target material, and flow meters are respectively arranged at the input ends of the gas channels.

[0014] In this scheme, the gas channels are symmetrically arranged on both sides of the target material, and the air outlet directions are arranged in opposite directions to ensure that the working gas density on the target surface is the same. When the film thickness on one side deviates, the working gas flow rate is monitored by the flow meter and the flow valve is adjusted by the control system to control the working gas flow input of the gas channel on the corresponding side, so as to adjust the film thickness on the corresponding side.

[0015] Preferably, the cathode base is arranged on the anode bottom plate, an insulating plate is arranged between the anode bottom plate and the cathode base, the cathode base is surrounded by an anode side plate, the anode side plate is fixedly arranged on the anode bottom plate, and the gas channel is arranged in the wall of the anode side plate.

[0016] In this scheme, the cathode is wrapped in the anode, and a strong electric field is formed between the anode and the cathode. The gas between the two can undergo glow discharge, produce ionization, and generate plasma, so that the incoming working gas does not need to be pre-ionized. The gas channel is also directly set on the anode side plate to save space. At the same time, the anode side plate can be set into a stacked structure, which is also convenient for the maintenance of the gas channel.

[0017] Preferably, a gap is provided between the anode side plate and the cathode base, the outlet of the gas channel is provided in the gap, the four sides of the target material are pressed onto the cathode base by a target material pressure strip plate, an anode pressure strip plate is provided at the end of the anode side plate, and a gap is formed between the anode pressure strip plate and the target material pressure strip plate.

[0018] In this scheme, the working gas in the gas channel is first input into the gap between the anode side plate and the cathode base, and then smoothly output from the gap formed between the anode pressure strip plate and the target pressure strip plate parallel to the target surface, avoiding pressure fluctuations on the target surface due to excessive gas flow rate. At the same time, the smaller gap between the anode side plate and the cathode base also causes the dark area (Dark Space) caused by the glow discharge of the working gas to appear here, ensuring that the target surface is a positive glow area (Positive Glow) and there are sufficient positive ions to impact the target on the cathode.

[0019] At the same time, in order to prevent the target atoms from being sputtered out of the target material and blocking the channel outlet arranged next to the target material, preferably, the horizontal height of the channel outlet of the gas channel is lower than the plane where the target pressure strip plate is located.

[0020] In this scheme, the outlet of the gas channel is hidden in the gap between the anode side plate and the cathode base. The atoms of the target material are sputtered on the anode pressure strip plate, and will not directly bounce into the outlet of the gas channel to block the gas channel. At the same time, the gap formed by the long strips between the anode pressure strip plate and the target pressure strip plate also effectively prevents the target material atoms from sputtering and blocking the gas channel. The channel outlet position is set relatively low, which can also ensure that the working gas output from the gas channel is first sprayed on the cathode base. After reducing the flow rate, the working gas then flows out evenly and smoothly from the gap, ensuring that the working gas density is the same at every point on the target surface.

[0021] A coating device also includes a vacuum chamber and an anode substrate.

[0022] In this scheme, the planar cathode and anode base are both set in the vacuum chamber, and the coating target is placed on the anode base. The main equipment of the coating equipment in the vacuum chamber is and only the planar cathode and anode base, wherein the anode side plate and anode bottom plate covered by the planar cathode are connected to the anode base. It is not necessary to set up an independent working gas input channel beside the planar cathode, so as to avoid the uneven gas pressure caused by the input of working gas between the planar cathode and the anode substrate, and at the same time effectively avoid the fluctuation of the sputtering path of the target atoms, and ensure the uniformity of the film thickness.

[0023] Beneficial effects of the utility model:

[0024] 1. The utility model combines a gas channel for inputting working gas with a planar cathode, and at the same time enables the working gas input in the gas channel to be uniformly output along the length direction of the target material, so that the density of the plasma in the working gas is uniform on the surface of the target material, thereby making the thickness of the sputtering deposited film uniform. The thickness of the film can also be indirectly controlled by regulating the flow of the working gas in the gas channel without breaking the vacuum. At the same time, the utility model has a simple structure, can effectively ensure that the thickness of the base surface film is uniform and flat, and effectively improves the coating quality and efficiency of the coating equipment.

[0025] 2. The film coating equipment using the planar cathode of the utility model does not need to set up an additional working gas input pipe, so as to avoid the unbalanced gas pressure caused by the separate input of working gas between the planar cathode and the anode substrate, avoid the fluctuation of the sputtering path of the target atoms, and ensure the uniformity of the film thickness. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] In order to more clearly illustrate the technical solution of the present invention, the drawings required for describing the embodiments are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0027] Figure 1 It is a three-dimensional cross-sectional view of the utility model;

[0028] Figure 2 A half-section view of the front side of the utility model;

[0029] Figure 3 It is a cross-sectional view of the side gas channel structure of the utility model.

[0030] In the above drawings, the corresponding reference numerals are as follows:

[0031] 1- cathode base, 2- magnet assembly, 3- target material, 4- gas channel, 41- channel outlet, 42- diversion unit, 5- anode bottom plate, 6- anode side plate, 7- insulation plate, 8- target strip plate, 9- anode strip plate. DETAILED DESCRIPTION

[0032] In conjunction with the accompanying drawings, the technical solution of the present invention is clearly and completely described through the specific implementation methods of the embodiments of the present invention.

[0033] Embodiment 1:

[0034] like Figure 1 to Figure 2 A planar cathode for coating shown in FIG. 1 comprises a cathode base 1, wherein a magnet assembly 2 is arranged inside the cathode base 1, a target material 3 is horizontally arranged on the cathode base 1, a gas channel 4 is arranged on the side of the cathode base 1, working gas is outputted in the gas channel 4, outlets of the gas channel 4 are uniformly arranged along the length direction of the target material 3, and the flow direction of the output working gas is parallel to the surface of the gas target material 3, the cathode base 1 is arranged on an anode bottom plate 5, a layer of insulating plate 7 is arranged between the anode bottom plate 5 and the cathode base 1, and the cathode base is surrounded by an anode side plate 6, and the anode side plate 6 is fixedly arranged on the anode bottom plate 5.

[0035] Specifically, the cathode base 1 is covered by the anode base and the anode side plate 6, and a strong electric field is formed between the anode and the cathode. The inert working gas (such as argon) output from the gas channel 4 can generate glow discharge, produce ionization, and generate plasma. Since the magnet assembly 2 in the cathode substrate generates a magnetic field, the electrons are constrained by the magnetic field to form a closed trajectory near the surface of the target material 3, thereby enhancing the sputtering process.

[0036] In this embodiment, there is no need to set up an additional pipeline for conveying working gas. At the same time, since the gas output from the gas channel 4 is stable and uniform, the uniform distribution of plasma density on the surface of the target material 3 is effectively guaranteed, so that the thickness of the sputtered deposited film is uniform.

[0037] Furthermore, the gas channel 4 is symmetrically arranged on both sides of the target material 3, and the input ends of the gas channel 4 are respectively provided with flow meters. The gas channels 4 are symmetrically arranged on both sides of the target material 3, and the air outlet directions are arranged oppositely to ensure that the working gas density on the surface of the target material 3 is the same. When the film thickness on one side deviates, the working gas flow rate is monitored by the flow meter and the flow valve is adjusted by the control system, thereby controlling the working gas flow input of the gas channel 4 on the corresponding side, so as to adjust the film thickness on the corresponding side. At the same time, the gas channel 4 can be arranged in the wall of the anode side plate 6 on both sides. The gas channel 4 is also directly arranged on the anode side plate 6 to save space. At the same time, the anode side plate 6 can be arranged in a stacked structure, which is also convenient for the maintenance of the gas channel 4.

[0038] Furthermore, Figure 3As shown, a flow splitter 42 is provided in the gas channel 4, and the flow splitter 42 evenly splits an input channel into multiple channels for output. The flow splitter 42 is arranged in multiple stages, and the output channel of the upper stage flow splitter 42 is connected to the input channel of the lower stage flow splitter 42. The flow splitter 42 preferably adopts a "T"-shaped two-division structure, and the gas channel 4 is finally divided into two to form multiple channel outlets 41, and the outlets are evenly spaced.

[0039] Specifically, the gas channel in the gas channel 44 is composed of a flow dividing unit 42, which is divided into multiple secondary gas channels 4 in a tree-like manner. The gas channel 4 of each level is symmetrically divided into two gas channels 4 to ensure that the flow rate of the working gas input into each gas channel 4 is equal, and finally achieves the effect of inputting a large flow of gas from the gas channel 4 and uniformly outputting a small flow of gas from multiple final channel outlets 41. At the same time, the final channel outlets 41 are also uniformly arranged along the length direction of the target material 3 to ensure that the density of the working gas input to the surface of the target material 3 is uniformly distributed, so that the thickness of the formed film layer is uniform. Compared with the arrangement of pores at intervals in the wall of the gas channel 4 for gas outlet, the design of this scheme can ensure that the density and pressure of the working gas output from each pore are the same.

[0040] It should be noted that if Figure 3 The arrangement of the gas channels 4 shown is generally used for targets within 1 meter in length. When the target length is greater than 1 meter, multiple groups of gas channels 4 may be provided to ensure that the gas flow output from the channel outlets 41 is the same.

[0041] Furthermore, a gap is provided between the anode side plate 6 and the cathode base 1, the outlet of the gas channel 4 is provided in the gap, the four sides of the target material 3 are pressed onto the cathode base 1 by a target material pressure strip plate 8, an anode pressure strip plate 9 is provided at the end of the anode side plate 6, and a gap is formed between the anode pressure strip plate 9 and the target pressure strip plate 8.

[0042] Specifically, the working gas in the gas channel 4 is first input into the gap between the anode side plate 6 and the cathode base 1, and then smoothly output from the gap formed between the anode pressure strip plate 9 and the target pressure strip plate 8 parallel to the surface of the target 3, so as to avoid pressure fluctuations on the surface of the target 3 due to excessive gas flow rate. At the same time, the smaller gap between the anode side plate 6 and the cathode base 1 also causes the dark area caused by the glow discharge of the working gas to appear here, so as to ensure that the surface of the target 3 is a positive glow area and there are sufficient positive ions to impact the target 3 on the cathode.

[0043] At the same time, in order to prevent the target material 3 from sputtering out target material 3 atoms and blocking the channel outlet 41 arranged next to the target material 3, further, the horizontal height of the channel outlet of the gas channel 4 is lower than the plane where the target material pressure strip plate 8 is located.

[0044] Specifically, the outlet of the gas channel 4 is hidden in the gap between the anode side plate 6 and the cathode base 1. The atoms of the target material 3 are sputtered on the anode pressure strip plate 9, and will not directly bounce into the outlet of the gas channel 4 to block the gas channel 4. At the same time, the gap formed between the anode pressure strip plate 9 and the target pressure strip plate 8, which matches the length of the target material 3, has a gap width much larger than the aperture of the gas outlet, and it is difficult for the atoms of the target material 3 to sputter and block the gas channel. The channel outlet 41 is set at a relatively low position, which can also ensure that the working gas output from the gas channel 4 is first sprayed on the cathode base 1. After reducing the flow rate, the working gas then flows out evenly and smoothly from the gap, ensuring that the working gas density is the same at every point on the surface of the target material 3. At the same time, when disassembling and cleaning, you only need to remove the anode pressure strip plate 9 for cleaning.

[0045] Embodiment 2:

[0046] A coating device uses the planar cathode in Example 1, and also includes a vacuum chamber and an anode base, on which a coating target is placed. The coating device of this embodiment has only the planar cathode and the anode base as main equipment in the vacuum chamber, wherein the anode side plate 6 and the anode bottom plate 5 covered by the planar cathode are connected to the anode base.

[0047] There is no need to set up an independent working gas input channel next to the planar cathode, so as to avoid the uneven gas pressure caused by the input of working gas between the planar cathode and the anode substrate, and to effectively avoid the fluctuation of the sputtering path of the target atoms, thereby ensuring the uniformity of the film thickness.

[0048] The above shows and describes the basic principle, main features and advantages of the utility model. Those skilled in the art should understand that the utility model is not limited by the above embodiments, and the above embodiments and descriptions are only for explaining the principle of the utility model. Without departing from the spirit and scope of the utility model, the utility model may have various changes and improvements, and these changes and improvements fall within the scope of the utility model to be protected.

Claims

1. A planar cathode for film coating, characterized in that: The invention comprises a cathode base (1), wherein a magnet assembly (2) is arranged inside the cathode base (1), a target material (3) is horizontally arranged on the cathode base (1), a gas channel (4) is arranged on the side of the cathode base (1), working gas is outputted in the gas channel (4), and the outlet of the gas channel (4) is evenly arranged along the length direction of the target material (3).

2. A planar cathode for film coating according to claim 1, characterized in that: A flow dividing unit (42) is provided in the gas channel (4), and the flow dividing unit (42) divides an input channel into a plurality of channel outputs.

3. A planar cathode for film coating according to claim 2, characterized in that: The flow dividing units (42) are arranged in multiple stages, and the output channel of the flow dividing unit (42) of the previous stage is connected to the input channel of the flow dividing unit (42) of the next stage.

4. A planar cathode for film coating according to claim 3, characterized in that: The flow splitting unit (42) adopts a binary structure, and the multiple channel outlets (41) formed by the final binary division of the gas channel (4) are evenly spaced.

5. A planar cathode for film coating according to any one of claims 1 to 4, characterized in that: The gas channels (4) are symmetrically arranged on both sides of the target material (3), and flow meters are respectively arranged at the input ends of the gas channels (4).

6. A planar cathode for film coating according to claim 5, characterized in that: The cathode base (1) is arranged on the anode bottom plate (5), a layer of insulating plate (7) is arranged between the anode bottom plate (5) and the cathode base (1), the cathode base (1) is surrounded by an anode side plate (6), the anode side plate (6) is fixedly arranged on the anode bottom plate (5), and the gas channel (4) is arranged in the plate wall of the anode side plate (6).

7. A planar cathode for film coating according to claim 6, characterized in that: A gap is provided between the anode side plate (6) and the cathode base (1), the outlet of the gas channel (4) is provided in the gap, the four sides of the target material (3) are pressed onto the cathode base (1) by a target material pressure strip plate (8), an anode pressure strip plate (9) is provided at the end of the anode side plate (6), and a gap is formed between the anode pressure strip plate (9) and the target pressure strip plate (8).

8. The planar cathode for film coating according to claim 7, characterized in that: The horizontal height of the channel outlet (41) of the gas channel (4) is lower than the plane where the target material pressure strip plate (8) is located.

9. A film coating device, comprising a planar cathode for film coating as claimed in any one of claims 1 to 8, characterized in that: Also included is a vacuum chamber and an anode substrate.

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