Plasma deposition equipment

Abstract

The utility model relates to the technical field of plasma deposition, in particular to plasma deposition equipment. Plasma deposition equipment is characterized in that a radio frequency power supply access port and a vacuum extraction opening are fixedly connected to the two sides of a vacuum chamber respectively, a raw material gas access port is rotationally connected to the top of the vacuum chamber, a driving mechanism is arranged at the top of the raw material gas access port, and a gas distribution disc is fixedly connected to the bottom end of the raw material gas access port; a plurality of exhaust holes are evenly formed in the bottom face of the gas distribution disc, a plurality of baking lamps are arranged in the middle of the inner wall of the vacuum chamber in a surrounding mode, an opening is formed in the front side of the vacuum chamber, a sealing plate is arranged on the opening in a matched mode, and a containing plate is arranged in the vacuum chamber. According to the utility model, the gas distribution disc is arranged and can rotate at a constant speed under the action of the driving mechanism, so that raw material gas can be uniformly distributed in the vacuum chamber and can be uniformly deposited on a base material after being converted into plasma under the action of the radio frequency power supply.

Description

TECHNICAL FIELD

[0001] The utility model relates to the technical field of plasma deposition, and particularly relates to a plasma deposition equipment. BACKGROUND

[0002] Plasma chemical vapor deposition is a technology of applying low-pressure gas discharge plasma to chemical vapor deposition. In conventional chemical vapor deposition, the energy source for promoting chemical reaction is heat energy. In addition to heat energy, plasma chemical vapor deposition also causes discharge by means of an external electric field, so that raw gas becomes plasma state, becomes very active excited molecules, atoms, ions and atomic groups, and promotes chemical reaction to form a thin film on the substrate surface.

[0003] The existing plasma deposition equipment is usually directly injected into the raw gas into the vacuum chamber through the inlet when depositing and attaching solid film on the surface of the object. In this way, the raw gas cannot be uniformly distributed in the space around the substrate, which will lead to the non-ideal film forming uniformity, thereby affecting the quality of the thin film formed on the substrate surface. UTILITY MODEL CONTENT

[0004] The utility model discloses a plasma deposition equipment, solve the problem that raw gas directly injects into the vacuum chamber and leads to the non-ideal film forming uniformity.

[0005] To solve the above technical problems, the utility model adopts the following technical scheme:

[0006] A kind of plasma deposition equipment, including vacuum chamber, radio frequency power supply access and vacuum air outlet are respectively fixedly connected with the both sides of the vacuum chamber, raw material gas inlet is rotatably connected to the top of vacuum chamber, drive mechanism is arranged at the top of the raw material gas inlet, gas distribution disc is fixedly connected to the bottom of raw material gas inlet, a plurality of exhaust holes are uniformly arranged on the bottom surface of the gas distribution disc, a plurality of baking lamps are arranged around the middle of the inner wall of vacuum chamber, opening is set in the front side of vacuum chamber, sealing plate is matched on the opening, placing plate is arranged in the inside of vacuum chamber, the inner wall of vacuum chamber far from opening is contacted with the side of placing plate, and the bottom of the inner side of sealing plate is fixedly connected with the other side, limiting mechanism is arranged on the outside of sealing plate, clamping mechanism is arranged on the top surface of placing plate, limiting slot is arranged on the side surface of both sides of placing plate, limiting rod is arranged on the both sides of placing plate, one end of the limiting rod is fixedly connected with the inner wall of vacuum chamber, and the other end is inserted into limiting slot.

[0007] Further technical solutions are that the driving mechanism comprises a driving motor fixedly installed on the top surface of the vacuum chamber, a driving gear fixedly connected on the output shaft of the driving motor, and a driven gear fixedly sleeved on the outer wall of the raw material gas inlet, the driving gear being engaged with the driven gear.

[0008] Still further technical solutions are that a handle is fixedly connected on the outer side of the sealing plate.

[0009] Still further technical solutions are that the limiting mechanism comprises a limiting plate, a fixed groove provided at the bottom of the outer wall of the vacuum chamber, the axis of the fixed groove being perpendicular to the horizontal plane, the opening size of the fixed groove being smaller than the bottom size, a connecting block provided in the fixed groove, the cross-sectional shape size of the connecting block being consistent with that of the fixed groove, the bottom surface of the connecting block being connected with the bottom closed end of the fixed groove through a limiting spring, the bottom of the side surface of the limiting plate being fixedly connected with the side surface of the connecting block, and the top being in contact with the outer side of the sealing plate.

[0010] Still further technical solutions are that the clamping mechanism comprises a fixed plate and a movable plate, a movable groove provided on the top surface of the placing plate, both ends of the movable groove being closed ends, a movable block provided in the movable groove, the movable block being connected with the closed end of the movable groove away from the sealing plate through a movable spring, the movable plate being a U-shaped plate, the bottom surface of the movable plate being fixedly connected with the movable block, and the fixed plate being arranged between the movable plate and the sealing plate, the bottom surface of the fixed plate being fixedly connected with the top surface of the placing plate.

[0011] Compared with the prior art, the utility model has the advantages of:

[0012] The gas distribution disc can rotate at a uniform speed under the action of the driving mechanism, so that the raw material gas can be uniformly distributed in the vacuum chamber, and can be uniformly deposited on the substrate after being converted into plasma by the radio frequency power source, the clamping mechanism arranged on the placing plate can stably clamp the substrate with different volumes, and the limiting mechanism is used for stably limiting the position of the sealing plate. BRIEF DESCRIPTION OF DRAWINGS

[0013] Figure 1 It is a perspective view of the utility model;

[0014] Figure 2 It is a front view of the utility model;

[0015] Figure 3 It is a bottom view of the gas distribution disc in the utility model;

[0016] Figure 4 It is a side view of the utility model;

[0017] Figure 5The utility model discloses a top view sectional view.

[0018] Icon: 1 - vacuum chamber, 2 - radio frequency power supply access, 3 - vacuum exhaust port, 4 - raw material gas access, 5 - gas distribution disc, 6 - exhaust hole, 7 - baking lamp, 8 - opening, 9 - sealing plate, 10 - placing plate, 11 - limit slot, 12 - limit rod, 13 - drive motor, 14 - driving gear, 15 - driven gear, 16 - limit plate, 17 - connecting block, 18 - limit spring, 19 - fixed slot, 20 - fixed plate, 21 - movable plate, 22 - movable spring, 23 - movable block, 24 - movable slot, 25 - handle. DETAILED DESCRIPTION

[0019] In order to make the utility model purposes, technical scheme and advantages more clearly, following combining with the drawings and example, the utility model is further detailedly explained. It should be understood that the specific example described here is only used to explain the utility model, and is not used to limit the utility model.

[0020] Figures 1 to 5 For the utility model embodiment.

[0021] Example 1

[0022] The utility model provides a kind of plasma deposition equipment, including vacuum chamber 1, radio frequency power supply access 2 and vacuum exhaust 3 are respectively fixedly connected with on both sides of the vacuum chamber 1, raw material gas access 4 is rotatably connected with on the top of vacuum chamber 1, driving mechanism is provided on the top of the raw material gas access 4, gas distribution disc 5 is fixedly connected with on the bottom end of raw material gas access 4, a plurality of exhaust holes 6 are uniformly provided on the bottom surface of the gas distribution disc 5, a plurality of baking lamps 7 are provided around in the middle of the inner wall of vacuum chamber 1, opening 8 is opened in the front side of vacuum chamber 1, and sealing plate 9 is matched on the opening 8, placing plate 10 is arranged in the inside of vacuum chamber 1, one side of the placing plate 10 is in contact with the inner wall of vacuum chamber 1 away from opening 8, the other side is fixedly connected with the bottom of the inside of sealing plate 9, limiting mechanism is arranged on the outside of sealing plate 9, clamping mechanism is arranged on the top surface of placing plate 10, limiting slot 11 is arranged on the side surface of both sides of placing plate 10, limiting rod 12 is arranged on both sides of placing plate 10, one end of the limiting rod 12 is fixedly connected with the inner wall of vacuum chamber 1, and the other end is inserted into limiting slot 11. After substrate is placed on placing plate 10 and is stably clamped by clamping mechanism, baking lamp 7 is powered on, and gas distribution disc 5 is rotated uniformly by driving mechanism, the required heat energy of chemical vapor deposition reaction is reached in vacuum chamber 1 by baking lamp 7, raw material gas is injected into raw material gas access 4 and then enters vacuum chamber 1 by uniformly rotating gas distribution disc 5, so that raw material gas can be uniformly distributed in the internal space of vacuum chamber 1, and finally raw material gas in vacuum chamber 1 is converted into plasma state under the action of radio frequency power, and then can be uniformly deposited on the surface of substrate to form a thin film.

[0023] Example 2

[0024] On the basis of example 1, the driving mechanism includes driving motor 13, the driving motor 13 is fixedly installed on the top surface of vacuum chamber 1, the driving motor 13 is fixedly connected with driving gear 14 on the output shaft, the outer wall of the raw material gas access 4 is fixedly sleeved with driven gear 15, and the driving gear 14 is engaged with the driven gear 15. When driving motor 13 works, gas distribution disc 5 can rotate uniformly, so that raw material gas can be uniformly distributed after entering the internal space of vacuum chamber 1, which is beneficial to the chemical vapor deposition of plasma gas on the substrate.

[0025] Example 3

[0026] On the basis of example 2, handle 25 is fixedly connected on the outside of sealing plate 9. It is convenient for staff to exert force on sealing plate 9 to pull, so as to control the position of placing plate 10.

[0027] Example 4

[0028] On the basis of embodiment 3, the limiting mechanism comprises a limiting plate 16, a fixed groove 19 is arranged at the bottom of the outer wall of the vacuum chamber 1, the axis of the fixed groove 19 is perpendicular to the horizontal plane, the opening size of the fixed groove 19 is smaller than the bottom size, a connecting block 17 is arranged in the fixed groove 19, the cross-sectional shape size of the connecting block 17 is consistent with the cross-sectional shape size of the fixed groove 19, the bottom surface of the connecting block 17 is connected with the bottom closed end of the fixed groove 19 through a limiting spring 18, the bottom of the side surface of the limiting plate 16 is fixedly connected with the side surface of the connecting block 17, and the top is in contact with the outer side of the sealing plate 9. After the substrate is placed on the placing plate 10 to push the sealing plate 9 to reseal the opening of the vacuum chamber 1, the limiting plate 16 will automatically move up under the action of the limiting spring 18 in the compressed state, so that the limiting plate 16 can stably limit the position of the sealing plate 9.

[0029] Embodiment 5

[0030] On the basis of embodiment 4, the clamping mechanism comprises a fixed plate 20 and a movable plate 21, a movable groove 24 is arranged on the top surface of the placing plate 10, both ends of the movable groove 24 are closed ends, a movable block 23 is arranged in the movable groove 24, the movable block 23 is connected with the closed end of the movable groove 24 away from the sealing plate 9 through a movable spring 22, the movable plate 21 is a U-shaped plate, the bottom surface of the movable plate 21 is fixedly connected with the movable block 23, the fixed plate 20 is arranged between the movable plate 21 and the sealing plate 9, and the bottom surface of the fixed plate 20 is fixedly connected with the top surface of the placing plate 10. Through the fixed plate 20 and the movable plate 21 in the clamping mechanism, different volumes of substrates can be clamped and fixed, so that the device can perform deposition processing on more different substrates.

[0031] Working principle: in use, first move the limiting plate 16 downward so that the limiting plate 16 cannot limit the sealing plate 9, then pull the sealing plate 9 to pull out the placing plate 10 from the vacuum chamber 1, place the substrate to be processed on the placing plate 10, stably clamp it through the fixed plate 20 and the movable plate 21, then push the placing plate 10 into the vacuum chamber 1 again, the limiting plate 16 automatically moves up under the action of the limiting spring 18, so that the sealing plate 9 can stably seal the opening of the vacuum chamber 1, then power on the baking lamp 7 and start the driving motor 13 to make the gas distribution disc 5 rotate at a constant speed in the vacuum chamber 1, after the baking lamp 7 makes the vacuum chamber 1 reach the required heat energy of the chemical vapor deposition reaction, the raw material gas is injected into the raw material gas inlet 4 and then enters the vacuum chamber 1 through the uniformly rotating gas distribution disc 5, so that the raw material gas can be uniformly distributed in the internal space of the vacuum chamber 1, and finally the raw material gas in the vacuum chamber 1 is converted into a plasma state under the action of the radio frequency power source, and then uniformly deposited on the surface of the substrate to form a thin film.

[0032] While the present application has been described with reference to the numerous explanatory embodiments thereof, it is to be understood that various other modifications can be effected within the scope of the application. More specifically, many variations and modifications will be apparent to those skilled in the art from a consideration of the specification or practice of the application disclosed. For example, it is within the scope of the application to use compositions in the practice and preparation of other compositions. It is also within the scope of the application to use the compositions in the preparation of other compositions. It is intended that the specification and examples be considered as exemplary only, with the true scope of the application being indicated by the following claims.

Claims

1. A plasma deposition apparatus, characterized by: The utility model provides a kind of vacuum chamber for depositing thin films, including vacuum chamber (1), radio frequency power supply access (2) and vacuum exhaust port (3) are respectively fixedly connected with in both sides of the vacuum chamber (1), raw material gas access (4) is rotatably connected in the top of vacuum chamber (1), driving mechanism is provided in the top of the raw material gas access (4), gas distribution disc (5) is fixedly connected with in the bottom end of raw material gas access (4), a plurality of exhaust holes (6) are evenly provided in the bottom surface of the gas distribution disc (5), a plurality of baking lamps (7) are provided around in the middle of the inner wall of vacuum chamber (1), opening (8) is opened in the front side of vacuum chamber (1), sealing plate (9) is matched on the opening (8), placing plate (10) is arranged in the inside of vacuum chamber (1), the inner wall of vacuum chamber (1) is contacted with the side of the placing plate (10) far from opening (8), and the bottom of the inside of sealing plate (9) is fixedly connected with the other side, limiting mechanism is provided in the outside of sealing plate (9), clamping mechanism is provided on the top surface of placing plate (10), limiting slot (11) is provided on the side surface of both sides of placing plate (10), limiting rod (12) is provided in both sides of placing plate (10), one end of the limiting rod (12) is fixedly connected with the inner wall of vacuum chamber (1), and the other end is inserted into limiting slot (11).

2. A plasma deposition apparatus as claimed in claim 1, characterized in that: The driving mechanism includes a drive motor (13), the drive motor (13) is fixedly installed on the top surface of the vacuum chamber (1), a driving gear (14) is fixedly connected to the output shaft of the drive motor (13), a driven gear (15) is fixedly sleeved on the outer wall of the raw material gas access (4), and the driving gear (14) is engaged with the driven gear (15).

3. A plasma deposition apparatus as claimed in claim 1, characterized in that: A handle (25) is fixedly connected to the outside of the sealing plate (9).

4. A plasma deposition apparatus as claimed in claim 1, characterized in that: The limiting mechanism includes a limiting plate (16), a fixed groove (19) is provided on the bottom of the outer wall of the vacuum chamber (1), the axis of the fixed groove (19) is perpendicular to the horizontal plane, the opening size of the fixed groove (19) is smaller than the size of the groove bottom, a connecting block (17) is provided in the fixed groove (19), the cross-sectional shape and size of the connecting block (17) are consistent with those of the fixed groove (19), the bottom surface of the connecting block (17) is connected to the bottom closed end of the fixed groove (19) through a limiting spring (18), the bottom of the side surface of the limiting plate (16) is fixedly connected to the side surface of the connecting block (17), and the top is in contact with the outside of the sealing plate (9).

5. A plasma deposition apparatus as claimed in claim 1, characterized in that: The clamping mechanism includes a fixed plate (20) and a movable plate (21), a movable slot (24) is provided on the top surface of the placing plate (10), both ends of the movable slot (24) are closed ends, a movable block (23) is provided in the movable slot (24), the movable block (23) is connected to the closed end of the movable slot (24) away from the sealing plate (9) through a movable spring (22), the movable plate (21) is a U-shaped plate, the bottom surface of the movable plate (21) is fixedly connected to the movable block (23), the fixed plate (20) is arranged between the movable plate (21) and the sealing plate (9), and the bottom surface of the fixed plate (20) is fixedly connected to the top surface of the placing plate (10).

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