An automatic detection device for electrical properties of single crystal silicon

Abstract

The utility model discloses a single crystal silicon electric performance automatic detection device for solving the problem of the dependence on multiple different equipment to carry out the detection of each index, the extremely tedious sample preparation process and the high safety risk of equipment in the use process, provides a kind of single crystal silicon electric performance automatic detection device. The device includes conductivity type detector, resistivity detector, minority carrier lifetime detector, cutting machine, grinding machine, polishing machine, low temperature infrared detector, conveyor belt, mechanical arm, single crystal silicon electric performance automatic detection device ontology. The device integrates multiple equipment, optimizes sample preparation process, realizes automatic operation. It will be placed in conductivity type detector, resistivity detector etc. are concentrated, and sample is automatically transported by mechanical arm, and detection is completed in turn by conveyor belt, avoids manual intervention, and shortens detection period. Standardization of sample preparation link ensures that sample specifications are consistent, and improves detection accuracy. The automatic operation of the device eliminates safety hazards and reduces the risk of injury. Equipment cooperation reduces human interference.

Description

Technical Field

[0001] This utility model relates to the field of electrical performance testing technology for monocrystalline silicon, and in particular to an automatic electrical performance testing device for monocrystalline silicon. Background Technology

[0002] In the production process of monocrystalline silicon materials, the testing of their electrical properties is a crucial step. However, current testing methods have many drawbacks.

[0003] On the one hand, a large number of monocrystalline silicon samples need to be tested daily, but this requires multiple different devices to perform tests on various indicators, making the sample preparation process extremely cumbersome. Not only do the monocrystalline silicon samples need to be cut and polished, but it's also difficult to ensure the uniformity of sample specifications. This directly leads to significant deviations in the test results, affecting the accurate assessment of the electrical properties of monocrystalline silicon. On the other hand, the sample preparation process relies heavily on manual operation of cutting machines, grinding wheels, and other equipment. These devices pose high safety risks during use, easily leading to workplace accidents and threatening the personal safety of operators. Utility Model Content

[0004] This invention addresses the problems of existing technologies that rely on multiple different devices to test various indicators, resulting in extremely cumbersome sample preparation processes and high safety risks during equipment use. It provides an automatic testing device for the electrical properties of monocrystalline silicon.

[0005] The technical solution adopted in this utility model is:

[0006] An automatic testing device for the electrical properties of monocrystalline silicon, comprising:

[0007] Conductivity pattern detector, used to detect the conductivity pattern of monocrystalline silicon;

[0008] Resistivity detector, used to detect the resistivity of monocrystalline silicon;

[0009] Minority carrier lifetime detector, used to detect the minority carrier lifetime of single-crystal silicon;

[0010] A cutting machine is used to cut monocrystalline silicon to meet the testing requirements of subsequent equipment.

[0011] A grinding machine is used for the preliminary grinding of monocrystalline silicon after it has been cut by a cutting machine.

[0012] Polishing machines are used to perform secondary polishing on ground monocrystalline silicon, making the sample surface smooth and mirror-like, meeting the testing requirements, and resulting in more refined test results.

[0013] Low-temperature infrared detectors are used to detect the carbon, oxygen, phosphorus, and boron content of monocrystalline silicon after polishing.

[0014] Conveyor belts are used to connect conductivity detectors, resistivity detectors, minority carrier lifetime detectors, cutting machines, grinding machines, polishing machines, and low-temperature infrared detectors.

[0015] A robotic arm is used to automatically pick up monocrystalline silicon and place it at the corresponding detection position.

[0016] The main body of the automatic electrical performance testing device for monocrystalline silicon is equipped with a conductivity detector, a resistivity detector, a minority carrier lifetime detector, a cutting machine, a grinding machine, a polishing machine, a low-temperature infrared detector, and a conveyor belt.

[0017] Furthermore, the automatic electrical performance testing device for monocrystalline silicon has a sample inlet.

[0018] Furthermore, the main body of the automatic electrical performance testing device for monocrystalline silicon has a sample outlet.

[0019] Furthermore, the conveyor belt operates in the following directions: sample inlet, conductivity detector, resistivity detector, minority carrier lifetime detector, cutter, grinder, polisher, low-temperature infrared detector, and sample outlet.

[0020] Furthermore, the conductivity detector, resistivity detector, minority carrier lifetime detector, cutting machine, grinding machine, polishing machine, and low-temperature infrared detector are arranged in a straight line. Since grinding and polishing are consecutive processes for easy transfer, the grinding machine and polishing machine are arranged side by side.

[0021] Furthermore, the surface of the automatic electrical performance testing device for monocrystalline silicon is passivated to avoid affecting the accuracy of the monocrystalline silicon.

[0022] The beneficial effects of this utility model are:

[0023] This utility model discloses an automated testing device for the electrical properties of monocrystalline silicon, integrating multiple devices, optimizing the sample preparation process, and achieving automated operation. It centrally houses conductivity detectors, resistivity detectors, and other components. Samples are automatically transported by a robotic arm and sequentially tested via a conveyor belt, avoiding manual intervention and shortening the testing cycle. Standardized sample preparation ensures consistent sample specifications and improves testing accuracy. Automated operation eliminates safety hazards and reduces the risk of workplace injuries. Equipment collaboration reduces human interference, resulting in more accurate and reliable test data, effectively solving the problems of low efficiency, high safety risks, and large data deviations in traditional testing methods. Attached Figure Description

[0024] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0025] Figure 1 This is a schematic diagram of an automatic testing device for the electrical properties of monocrystalline silicon. Detailed Implementation

[0026] In the description of this utility model, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicating the orientation or positional relationship are based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this utility model and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this utility model.

[0027] The following disclosure provides many different embodiments or examples for implementing various structures of this invention. To simplify the disclosure, specific examples of components and arrangements are described below. Of course, these are merely examples and are not intended to limit the scope of this invention.

[0028] The embodiments of the utility model will now be described in detail with reference to the accompanying drawings.

[0029] The automatic electrical performance testing device for monocrystalline silicon disclosed in this embodiment includes the following components: a conveyor belt 1, a conductivity type detector 2, a resistivity detector 3, a minority carrier lifetime detector 4, a cutting machine 5, a grinding machine 6, a polishing machine 7, a low-temperature infrared detector 8, a robotic arm 9, and the main body 10 of the automatic electrical performance testing device for monocrystalline silicon, as shown in the attached figure. Figure 1 As shown. In addition, this embodiment also provides a monocrystalline silicon sample to be tested. The positional and connection relationships between the above components are described in detail below.

[0030] The conductivity type detector 2 is used to detect the conductivity type of monocrystalline silicon (monocrystalline silicon rod) and determine whether it is N-type or P-type.

[0031] The resistivity detector 3 is used to detect the resistivity of monocrystalline silicon and evaluate its conductivity.

[0032] The minority carrier lifetime detector 4 is used to detect the minority carrier lifetime of monocrystalline silicon, reflecting its internal defect status.

[0033] The cutting machine 5 cuts monocrystalline silicon (monocrystalline silicon rod) into sizes and shapes that meet the requirements of subsequent testing.

[0034] The grinding machine 6 performs preliminary grinding on the cut monocrystalline silicon (monocrystalline silicon wafer) to remove uneven parts on the surface.

[0035] Polishing machine 7 performs secondary polishing on the ground monocrystalline silicon (monocrystalline silicon wafer) to make its surface smooth and mirror-like, further improving the detection accuracy.

[0036] The low-temperature infrared detector 8 is used to detect the carbon content, oxygen content, phosphorus content, and boron content of polished monocrystalline silicon (monocrystalline silicon wafers).

[0037] Conveyor belt 1 is used to connect the above-mentioned testing and processing equipment to realize the automatic transfer of samples between different workstations.

[0038] The robotic arm 9 is responsible for automatically picking up monocrystalline silicon and placing it in the corresponding detection position for detection.

[0039] The main body 10 of the automatic electrical performance testing device for monocrystalline silicon serves as the basic support structure of the entire device and is equipped with the aforementioned components. The main body 10 of the automatic electrical performance testing device for monocrystalline silicon has an inlet 101 and an outlet 102, and its surface is passivated to avoid affecting the testing accuracy of monocrystalline silicon.

[0040] Conductivity detector 2, resistivity detector 3, minority carrier lifetime detector 4, cutting machine 5, grinding machine 6, polishing machine 7, and low temperature infrared detector 8 are arranged sequentially on the main body 10 of the automatic electrical performance testing device for single crystal silicon, and are interconnected by conveyor belt 1 to form a complete automated testing line.

[0041] Because grinding and polishing are convenient for transfer between the two processes, the grinding machine 6 and the polishing machine 7 are arranged side by side. This layout can achieve seamless transfer of samples between the two steps of grinding and polishing without the need for long conveyor belt 1, thereby greatly improving detection efficiency, reducing sample loss and contamination risk during the transfer process, and also facilitating the compact layout and optimized design of the entire device.

[0042] The robotic arm 9 is installed in a suitable position on the main body of the device and can move flexibly between various detection positions and conveyor belt 1 to grasp and place single crystal silicon samples.

[0043] The conveyor belt 1 operates in the following order: sample inlet 101 → conductivity detector 2 → resistivity detector 3 → minority carrier lifetime detector 4 → cutter 5 → grinder 6 → polisher 7 → low-temperature infrared detector 8 → sample outlet 102. The sample is automatically transferred between the various detection and processing devices in this sequence, completing a series of detection processes.

[0044] The working principle of the automatic electrical performance testing device for monocrystalline silicon disclosed in this embodiment is described below.

[0045] The single crystal silicon to be tested is placed into the device through the sample inlet 101. After the robotic arm 9 identifies and grasps the single crystal silicon, it is placed at the detection position of the conductivity type detector 2.

[0046] Conductivity type detector 2 starts working, detecting the conductivity type of the monocrystalline silicon using a specific electrical method to determine its type. After the detection is completed, conveyor belt 1 automatically transports the monocrystalline silicon to the detection position of resistivity detector 3.

[0047] The resistivity detector 3 uses common resistivity measurement methods such as the four-probe method to detect the resistivity of monocrystalline silicon in order to evaluate its conductivity. After the detection is completed, the monocrystalline silicon continues to move along the conveyor belt 1 to the minority carrier lifetime detector 4.

[0048] The minority carrier lifetime detector 4 uses principles such as photoconductivity decay to measure the minority carrier lifetime of monocrystalline silicon, thereby understanding its internal defect status. After the minority carrier lifetime test is completed, the conveyor belt 1 feeds the monocrystalline silicon into the cutting machine 5 for dimensional cutting.

[0049] The cutting machine 5 precisely cuts the monocrystalline silicon into small sample pieces suitable for subsequent testing according to preset size requirements. The cut monocrystalline silicon sample pieces are transported to the grinding machine 6 testing position via conveyor belt 1.

[0050] Grinding machine 6 performs preliminary grinding on the cut sample to remove scratches and uneven parts generated during the cutting process, making the sample surface smoother. The ground sample continues to enter polishing machine 7 under the action of conveyor belt 1.

[0051] Polishing machine 7 employs high-precision polishing technology to perform secondary polishing on the ground sample, achieving a smooth, mirror-like surface to meet the high standards required for subsequent low-temperature infrared detection. The polished sample is then conveyed to the low-temperature infrared detector 8 via conveyor belt 1.

[0052] The low-temperature infrared detector 8 uses infrared spectroscopy to detect the carbon, oxygen, phosphorus, and boron content of polished samples in a low-temperature environment, accurately measuring the content of these impurities and providing a basis for evaluating the purity and performance of monocrystalline silicon.

[0053] Finally, the monocrystalline silicon sample that has completed all testing items is discharged from the sample outlet 102, and the entire testing process is complete. Through the coordinated work of its various components, the entire device achieves automated testing of the electrical properties of monocrystalline silicon, improving testing efficiency and accuracy while reducing safety hazards and data deviations caused by manual operation.

[0054] The automated single-crystal silicon electrical performance testing device disclosed in this embodiment significantly improves testing efficiency and accuracy by integrating multiple testing devices, optimizing sample preparation processes, and achieving automated operation, while ensuring operational safety and data reliability. The device centrally places multiple devices, such as the conductivity type detector 2, resistivity detector 3, and minority carrier lifetime detector 4, on a single machine. Samples are automatically transferred to each testing station via a robotic arm 9 and the testing process is completed sequentially via conveyor belts, avoiding frequent manual intervention and cumbersome transfers, and greatly shortening the testing cycle. In the sample preparation stage, standardized cutting, grinding, and polishing processes are adopted to ensure consistent sample specifications and improve subsequent testing accuracy. Automated operation eliminates the safety hazards of manually using cutting machines, grinding wheels, and other equipment, reducing the risk of workplace injuries. Furthermore, the collaborative operation of the equipment reduces human interference, making the test data more accurate and reliable, effectively solving the problems of low efficiency, numerous safety hazards, and large data deviations in traditional testing methods.

Claims

1. An automatic testing device for the electrical properties of monocrystalline silicon, characterized in that, include: A conductivity type detector, wherein the conductivity type detector is used to detect the conductivity type of monocrystalline silicon; A resistivity detector for detecting the resistivity of monocrystalline silicon; Minority carrier lifetime detector, wherein the minority carrier lifetime detector is used to detect the minority carrier lifetime of single-crystal silicon; A cutting machine, used to cut monocrystalline silicon to meet the testing requirements of subsequent equipment; A grinding mill, used for preliminary grinding of monocrystalline silicon cut by the cutting mill; A polishing machine, used for secondary polishing of ground monocrystalline silicon; A low-temperature infrared detector is used to detect the carbon content, oxygen content, phosphorus content, and boron content of monocrystalline silicon after polishing by a polishing machine. A conveyor belt for connecting the conductivity type detector, the resistivity detector, the minority carrier lifetime detector, the cutter, the grinder, the polisher, and the low-temperature infrared detector; A robotic arm, used to automatically pick up monocrystalline silicon and place it at the corresponding detection position; The main body of the automatic electrical performance testing device for monocrystalline silicon includes a conductivity type detector, a resistivity detector, a minority carrier lifetime detector, a cutting machine, a grinding machine, a polishing machine, a low-temperature infrared detector, and a conveyor belt.

2. The automatic electrical performance testing device for monocrystalline silicon according to claim 1, characterized in that, The automatic electrical performance testing device for monocrystalline silicon has a sample inlet.

3. The automatic testing device for the electrical properties of single-crystal silicon according to claim 2, characterized in that, The automatic electrical performance testing device for monocrystalline silicon has a sample outlet.

4. The automatic electrical performance testing device for monocrystalline silicon according to claim 3, characterized in that, The conveyor belt operates in the following direction: the sample inlet, the conductivity detector, the resistivity detector, the minority carrier lifetime detector, the cutter, the grinder, the polisher, the low-temperature infrared detector, and the sample outlet.

5. The automatic testing device for the electrical properties of monocrystalline silicon according to claim 1, characterized in that, The conductivity detector, the resistivity detector, the minority carrier lifetime detector, the cutting machine, the grinding machine, the polishing machine, and the low-temperature infrared detector are arranged in a straight line, with the grinding machine and the polishing machine arranged side by side.

6. The automatic testing device for the electrical properties of monocrystalline silicon according to any one of claims 1-5, characterized in that, The surface of the automatic electrical performance testing device for monocrystalline silicon is passivated to avoid affecting the accuracy of the monocrystalline silicon.

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