Purification apparatus for electronic grade hexachlorodisilane
CN224686303UActive Publication Date: 2026-08-28JIANGSU XINHUA SEMICON TECH CO LTD
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Patent Information
- Application Number
- CN202521680368.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-08-07
- Publication Date
- 2026-08-28
- Estimated Expiration
- 2035-08-07
AI Technical Summary
Technical Problem
然而，工业合成的HCDS通常含有六氯乙氧硅烷（Cl3Si-O-SiCl3）等含氧杂质，这些杂质会严重影响其在化学气相沉积（CVD）或原子层沉积（ALD）工艺中的成膜质量
Benefits of technology
[0013]与现有技术相比本实用新型的有益效果为：待处理物料含有HCDS、六氯乙硅氧烷和高沸物等，六氯乙硅氧烷含Si-O键，极性略强于含Si-Si键的HCDS，而分子筛对极性更强的分子具有优先吸附作用，待处理物料通过分子筛时，六氯乙硅氧烷因极性较强被分子筛优先吸附，HCDS因极性较弱吸附量少，从而在进入精馏机构前实现二者的初步分离，降低后续精馏分离的负荷。
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Figure CN224686303U_ABST
Abstract
The utility model relates to the technical field of hexachloroethyldisilane purification, especially relates to a kind of purification device of electronic grade hexachloroethyldisilane, including rectifying mechanism;Still include molecular sieve, and the material to be treated is entered HCDS purification after passing through molecular sieve and enters rectifying mechanism;Before entering rectification process, first pass through molecular sieve, molecular sieve preferentially adsorbs the hexachloroethyldisiloxane of more strong polarity, to reduce the energy consumption load of rear-end rectification system.
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