A novel high-power semiconductor module package

Abstract

The utility model relates to high -power semiconductor module packaging technical field discloses a novel high -power semiconductor module packaging, including concave aluminium bottom plate, the concave aluminium bottom plate top is provided with the shell, the concave aluminium bottom plate inside assembly is integrated without pressure piece utility electrode, the concave aluminium bottom plate and utility electrode between assembly have conductive positive electrode, conductive negative electrode, semiconductor chip, integrated gate device body and DBC substrate, and the concave aluminium bottom plate and utility electrode are fixed through the bolt on the elastic pressing plate, the utility model through the concave aluminium bottom plate and top each component assembly are finished, use the first step encapsulation of insulating glue perfusion mode, after 3 minutes of negative pressure 0.097mpa, secondary insulating glue perfusion negative pressure 0.08mpa keeps 3 minutes, and product insulation effect can reach 10200V / min, ensure the normal use of maximum high -power module 2000A and 6500V, solve the current device process complex, high -power chip can not be positioned, and the problem that the assembly operation is complicated and difficult to mass production.

Description

Technical Field

[0001] This utility model relates to the field of high-power semiconductor module packaging technology, specifically a novel high-power semiconductor module packaging. Background Technology

[0002] In the application field of high-power semiconductor modules in my country, the development of packaging technology plays a crucial role in product performance and cost control. Currently, 99% of high-power modules use T2 copper base plates as heat-conducting components during product use. In recent years, copper prices have continued to rise sharply. Due to its precious metal properties, price fluctuations are difficult to control, which directly leads to a sharp increase in the production cost of high-power modules, resulting in high product sales prices and severely weakening the products' competitiveness in the market. Some companies have tried to use thick aluminum base plates to replace copper base plates, but this has caused a series of new problems. Thick aluminum base plates lack strength and cannot be processed into grooved base plates, causing heat accumulation during module use, affecting heat dissipation and product performance; the aluminum base plate reverse mounting process is complex, production efficiency is difficult to improve, and it is impossible to achieve precise positioning of high-power fully press-fit chips, making assembly operations cumbersome and costly, making it difficult to achieve large-scale production and meet the growing market demand for high-power semiconductor modules. From the perspective of the module's internal structure, existing high-power semiconductor modules use a copper conductive block to contact the semiconductor chip before conducting to the electrodes. This structure leads to an increase in the VTM value, causing the internal temperature of the module to rise, which not only affects module performance but also shortens its lifespan. Furthermore, the ALN aluminum nitride substrate used in traditional high-power modules is extremely expensive, costing more than ten times that of DBC-cut thermally conductive insulating sheets, undoubtedly further increasing product costs. In summary, existing high-power semiconductor module packaging technology has many shortcomings in material selection and structural design, severely restricting the industry's development. Utility Model Content

[0003] The purpose of this invention is to address the shortcomings of existing technologies by proposing a novel high-power semiconductor module package.

[0004] To achieve the above objectives, the present invention adopts the following technical solution: a novel high-power semiconductor module package, comprising a concave aluminum base plate, an outer shell disposed above the concave aluminum base plate, an integrally formed pressure-free common electrode assembled on the inner side of the concave aluminum base plate, and a conductive anode, a conductive cathode, a semiconductor chip, an integrated gate device body and a DBC substrate assembled between the concave aluminum base plate and the common electrode, and the concave aluminum base plate and the common electrode are fixed by bolts on a spring plate.

[0005] As a further description of the above technical solution:

[0006] The ultra-thin DBC substrate is assembled between the bottom of the concave aluminum base plate and the conductive anode, and an integrated gate electrode body and an insulating gate electrode body are assembled between the conductive cathode and the common electrode.

[0007] As a further description of the above technical solution:

[0008] A DBC substrate is disposed above the concave aluminum base plate. The DBC substrate is disposed inside the housing. A gate terminal and auxiliary cathode terminal and a gate auxiliary cathode control terminal block are disposed on one side of the housing. A common electrode is disposed above the DBC substrate. A semiconductor chip is disposed above the common electrode. A conductive anode is disposed above the semiconductor chip. A conductive cathode is disposed above the conductive anode. An integrated gate device body and an insulating gate body are disposed above the conductive cathode.

[0009] As a further description of the above technical solution:

[0010] A steel pressure pad is provided above the insulating door pole, a spring pressure plate is provided above the steel pressure pad, and a module insulating cover is provided above the spring pressure plate and the outer shell. Bolts are threaded through and threaded to the four corners of the spring pressure plate and the bottom of the module insulating cover, and nuts are threaded through and threaded to the bottom of the module insulating cover.

[0011] As a further description of the above technical solution:

[0012] The outer shell is made of high-insulation PPS material, and the spring plate is made of 60Si2Mn material.

[0013] As a further description of the above technical solution:

[0014] The conductive anode and conductive cathode are configured using copper-free pressure blocks to reduce the thermal resistance of the two contacts.

[0015] As a further description of the above technical solution:

[0016] The concave aluminum base plate has a groove at the bottom for automatic positioning of the product within the base plate.

[0017] This utility model has the following beneficial effects:

[0018] 1. The die-cast integrated base plate not only has a fast production speed and saves material costs, but also achieves the same heat conduction effect as the base plate by changing the internal structure without reducing the heat conduction speed of the original semiconductor module; the cathode and anode in the semiconductor module use copper-free pressing blocks, which reduces two contact thermal resistances and increases the current carrying capacity.

[0019] 2. The internal structure of the semiconductor module uses DBC wafers as heat-conducting substrates. Since the semiconductor modules are all newly designed with special dimensions, the products can be automatically positioned in the grooved base plate during the assembly process, which facilitates automated assembly and production and improves production efficiency. Attached Figure Description

[0020] Figure 1 This is a schematic diagram of the overall structure of a novel high-power semiconductor module package proposed in this utility model.

[0021] Legend:

[0022] 1. Concave aluminum base plate; 2. Housing; 3. Gate auxiliary cathode control terminal block; 4. Gate terminal and auxiliary cathode terminal; 5. DBC substrate; 6. Common electrode; 7. Semiconductor chip; 8. Conductive anode; 9. Conductive cathode; 10. Integrated gate device body; 11. Insulated gate body; 12. Steel pressure pad; 13. Spring pressure plate; 14. Module insulating cover; 15. Bolt; 16. Nut. Detailed Implementation

[0023] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.

[0024] Example 1:

[0025] like Figure 1 As shown, this embodiment provides a novel high-power semiconductor module package, including a concave aluminum base plate 1, a housing 2 disposed above the concave aluminum base plate 1, an integrally formed pressure-free common electrode 6 assembled on the inner side of the concave aluminum base plate 1, a conductive anode 8, a conductive cathode 9, a semiconductor chip 7, an integrated gate device body 10 and a DBC substrate 5 assembled between the concave aluminum base plate 1 and the common electrode 6, and the concave aluminum base plate 1 and the common electrode 6 are fixed by bolts 15 on the spring plate 13.

[0026] In this embodiment, the concave aluminum base plate 1 serves as a heat dissipation and support substrate. The spring-loaded plate 13 is fixed to the common electrode 6 via bolts 15, ensuring that components such as the conductive anode 8, conductive cathode 9, and semiconductor chip 7 are tightly pressed onto the DBC substrate 5. The die-cast integrated base plate not only boasts fast production speed and saves material costs, but also achieves the same heat conduction effect as the base plate by altering the internal structure without reducing the original semiconductor module's heat conduction speed. The spring-loaded plate 13 provides uniform pressure, ensuring electrical connections and thermal conductivity between layers, reducing contact resistance and thermal resistance, and improving module power density and heat dissipation efficiency.

[0027] Specifically, the ultra-thin DBC substrate 5 is assembled between the bottom of the concave aluminum base plate 1 and the conductive anode 8, and an integrated gate device body 10 and an insulating gate body 11 are assembled between the conductive cathode 9 and the common electrode 6.

[0028] In this embodiment, the DBC substrate 5 provides electrical insulation and heat conduction path between the concave aluminum base plate 1 and the conductive anode 8; the integrated gate device body 10 and the insulating gate body 11 realize signal transmission and electrical isolation between the conductive cathode 9 and the common electrode 6; the DBC substrate 5 reduces thermal resistance and improves heat dissipation speed; the gate device body 10 and the insulating gate body 11 ensure reliable transmission of control signals and avoid interference.

[0029] Specifically, a DBC substrate 5 is disposed above the concave aluminum base plate 1. The DBC substrate 5 is disposed inside the housing 2. A gate electrode terminal and auxiliary cathode terminal 4 and a gate auxiliary cathode control terminal block 3 are disposed on one side of the housing 2. A common electrode 6 is disposed above the DBC substrate 5. A semiconductor chip 7 is disposed above the common electrode 6. A conductive anode 8 is disposed above the semiconductor chip 7. A conductive cathode 9 is disposed above the conductive anode 8. An integrated gate device body 10 and an insulating gate body 11 are disposed above the conductive cathode 9.

[0030] In a preferred implementation, the DBC substrate 5 supports the circuit, the common electrode 6 provides the current path, the semiconductor chip 7 realizes the power conversion, the conductive anode 8 and the conductive cathode 9 transmit the current, and the gate terminal 4 and the control terminal block 3 are connected to the external control signal; the vertical stacking structure shortens the current path, reduces parasitic inductance, and improves the high-frequency performance of the module; the outer casing 2 protects the internal components from environmental influences.

[0031] Specifically, a steel pressure pad 12 is provided above the insulating gate body 11, a spring pressure plate 13 is provided above the steel pressure pad 12, a module insulating cover 14 is provided above the spring pressure plate 13 and the outer shell 2, and bolts 15 are threaded through and threaded to the four corners of the spring pressure plate 13 and the lower part of the module insulating cover 14, and nuts 16 are threaded through and threaded to the lower part of the module insulating cover 14.

[0032] It should be noted that the steel pressure pad 12 evenly distributes the pressure of the spring pressure plate 13, and the spring pressure plate 13 applies pre-tightening force through the bolts 15 and nuts 16. The module insulating cover 14 provides mechanical protection and electrical insulation. The steel pressure pad 12 prevents local stress concentration from damaging the chip. The elasticity of the spring pressure plate 13 ensures stable pressure and adapts to temperature changes. The insulating cover 14 avoids the risk of external short circuits.

[0033] Specifically, the outer shell 2 is made of high-insulation PPS material, and the spring plate 13 is made of 60Si2Mn material.

[0034] As a preferred implementation, the high-insulation PPS material housing 2 provides electrical isolation. The PPS housing 2 is resistant to chemical corrosion and high temperature, ensuring the reliability of the module. The 60Si2Mn spring plate 13 has strong fatigue resistance, ensuring that the pressure does not decrease during thermal cycling.

[0035] Example 2:

[0036] Specifically, the conductive anode 8 and conductive cathode 9 are set with copper-free pressure blocks to reduce the contact thermal resistance of the two electrodes.

[0037] It should be noted that the conductive anode 8 and conductive cathode 9 are in direct contact with the chip 7, eliminating the need for the traditional copper clamp, reducing two contact interfaces, simplifying the structure and reducing costs with the clamp-free design.

[0038] Specifically, the bottom of the concave aluminum base plate 1 is provided with a groove for the product to be automatically positioned in the base plate.

[0039] In this embodiment, since the semiconductor modules are all newly designed with specific dimensions, the products can be automatically positioned in the grooved base plate during the assembly process, which facilitates automated assembly and production and improves production efficiency.

[0040] In use, the components are automatically positioned by the groove in the concave aluminum base plate 1. The DBC substrate 5, common electrode 6, semiconductor chip 7, conductive anode 8, conductive cathode 9, integrated gate device body 10, etc. are assembled in a vertical stacking structure and pressed together by nuts 16 to ensure tight contact between the components and reduce contact thermal resistance. The outer shell 2 is made of high-insulation PPS material to ensure electrical isolation. Finally, the insulation performance is improved by injecting insulating glue under negative pressure twice (first 0.097MPa for 3 minutes, second 0.08MPa for 3 minutes). This reduces costs while achieving high-power operation of 2000A current and 6500V voltage.

[0041] Finally, it should be noted that the above description is only a preferred embodiment of the present utility model and is not intended to limit the present utility model. Although the present utility model has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments or make equivalent substitutions for some of the technical features. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present utility model should be included within the protection scope of the present utility model.

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