DEVICE FOR MEASURING ELECTROSTATIC FIELD STRENGTH, DETECTION DEVICE, METHOD FOR MEASURING THE ELECTROSTATIC FIELD STRENGTH OF A TARGET OBJECT

Abstract

An electrostatic field strength measuring device comprises an electrostatic field detection device and a processor. The electrostatic field detection device includes a ring light source configured to emit a light signal toward a target object, and a reflection detector located within and surrounded by the ring light source. The reflection detector is configured to receive reflected light from the light signal reflected by a surface of the target object and to generate an electrical signal based on this reflected signal. The processor is configured to determine measurements of the electrostatic field strength at the surface of the target object based on this electrical signal.

Description

BACKGROUND

[0001] Semiconductor devices are formed on, in, and / or from semiconductor wafers and used in a variety of electronic devices such as mobile phones, laptops, desktops, tablets, watches, gaming systems, and various other industrial, commercial, and consumer electronics. Semiconductor manufacturing involves using one or more components to form semiconductor devices on, in, and / or from a semiconductor wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0002] Aspects of the present disclosure are best understood by reference to the following detailed description when taken in conjunction with the accompanying drawings. It should be noted that, in accordance with industry practice, various features are not drawn to scale. Indeed, the dimensions of various features may be arbitrarily exaggerated or reduced for clarity of illustration. Fig. 1 shows a schematic view of a device according to some embodiments. Fig. 2 shows a perspective view of a device according to some embodiments. Fig. 3 shows a schematic view of a device according to some embodiments. Fig. 4 shows a partially enlarged view of a device according to some embodiments. Fig. 5 shows a partially enlarged view of a device according to some embodiments. Fig. 6 shows a perspective view of a target object according to some embodiments. Fig. 7 shows a visible image of a target object generated using an image sensor of a device, according to some embodiments. Fig. 8 shows a representation of multiple pixel colors determined based on multiple measures of electrostatic field strength, according to some embodiments. Fig. 9 shows a map of the electrostatic field strength generated by a device according to some embodiments. Fig. 10 shows a perspective view of a device and a target object according to some embodiments. Fig. 11 shows a perspective view of a device and a target object according to some embodiments. Fig. 12 shows a perspective view of a device and a target object according to some embodiments. Fig. 13 shows a map of the electrostatic field strength generated by a device according to some embodiments. Fig. 14 shows a schematic view of a system according to some embodiments. Fig. 15 illustrates an electrostatic information display system that displays information related to an electrostatic event, according to some embodiments. Fig. 16 is a flowchart illustrating a method according to some embodiments. DETAILED DESCRIPTION

[0003] The following disclosure offers many different embodiments or examples for implementing various features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a first element over or on top of a second element in the following description may include embodiments where the first and second elements are formed in direct contact, and may also include embodiments where additional elements may be formed between the first and second elements such that the first and second elements may not be in direct contact. Furthermore, reference numerals and / or letters may be repeated throughout the various examples throughout the present disclosure.This repetition is for simplicity and clarity and does not in itself prescribe any relationship between the various embodiments and / or structures discussed.

[0004] Furthermore, spatially related terms such as "beneath," "below," "under," "above," "over," and the like may be used herein for convenience of description to describe the relationship of one element or feature to another element or feature shown in the figures. The spatially related terms are intended to encompass various orientations of the device in use or operation, in addition to the orientation shown in the figures. The device may be oriented differently (rotated 90 degrees or in other orientations), and the spatially related terms used herein may also be interpreted accordingly.

[0005] According to some embodiments, a detection device includes a ring light source and a reflection detector. The ring light source has a ring shape to surround the reflection detector and is configured to emit a light signal toward a target object. The reflection detector is configured to receive a reflection signal including light of the light signal reflected by a surface of the target object. The light of the light signal reflected by the surface generates one or more additional harmonics in the reflection signal due, at least in part, to second harmonic generation that occurs when the light signal is reflected by the surface.Accordingly, the reflection signal includes first harmonic light having an original wavelength of the light signal generated by the ring light source and second harmonic light having a wavelength approximately half the original wavelength. The intensity of the second harmonic light in the reflection signal is representative of an electrostatic field strength at the surface of the target object. In some embodiments, an increase in the intensity of the second harmonic light reflects a higher value of the electrostatic field strength at the surface.

[0006] In some embodiments, the ring light source comprises a plurality of first photodiodes and a plurality of second photodiodes. The first photodiodes are configured to emit a first light signal having a first wavelength toward the target object, and the second photodiodes are configured to emit a second light signal having a second wavelength toward the target object. The second wavelength is different from the first wavelength. Accordingly, the reflection detector is configured to receive a first reflection signal reflected by the surface of the target object and a second reflection signal reflected by the surface of the target object to obtain electrostatic field strengths for two different materials at the surface of the target object.

[0007] In some embodiments, the reflection detector includes an optical filter that filters the reflection signal to provide filtered light including the second harmonic light to a light sensor. In some embodiments, the optical filter filters the reflection signal by blocking light of the reflection signal other than the second harmonic light. The light sensor generates an electrical signal based on the filtered light. The electrical signal indicates an intensity of the filtered light. In some embodiments, the intensity of the filtered light is approximately equal to the intensity of the second harmonic light in the reflection signal due, at least in part, to light other than the second harmonic light being filtered from the reflection signal by the optical filter. A processor determines measures of the electrostatic field strength at the surface based on the electrical signal.In some embodiments, an electrostatic field strength map is generated based on the electrostatic field strength measurements.

[0008] In some embodiments, the processor is configured to detect an electrostatic event at the target object, e.g., a semiconductor manufacturing component, using at least one of the electrostatic field strength map or the electrostatic field strength measures. In some embodiments, the electrostatic event corresponds to at least one of an electrostatic charge accumulation, an electrostatic field hotspot, or a potential electrostatic discharge (ESD) event at the semiconductor manufacturing component.

[0009] Fig. 1 shows a schematic view of a device according to some embodiments. In some embodiments, the device 102 is configured to measure measures of a property of a target object 104. For example, in the present embodiment, the device is an electrostatic field strength measuring device configured to determine measures of the electrostatic field strength at a surface 106 of the target object 104. In some embodiments, the target object 104 comprises a semiconductor manufacturing component, such as at least one of (i) a physical vapor deposition (PVD) tool, such as a plasma-enhanced PVD tool, (ii) a chemical vapor deposition (CVD) tool, (iii) a coating tool, (iv) an etching tool, such as at least one of a plasma etching tool,a wet etching system or a dry etching system, (v) a lithography system, (vi) a chemical mechanical planarization (CMP) system, (vii) a semiconductor wafer storage device such as a front-opening unified pod (FOUP), (viii) a component that utilizes plasma, (ix) a tube such as at least one of a conduit, an insulated tube, or another type of tube configured to carry a fluid including at least one of a liquid or a gas, (x) a manifold, (xi) a fluid storage device configured to store a fluid including at least one of a liquid or a gas, (xii) a processing chamber, (xiii) a pump, (xiv) a robotic arm, (xv) one or more stacking tools, (xvi) one or more management tools, (xvii) one or more handling tools, (xviii) a test device,(xix) an automated material handling system, (xx) an automated transport system, (xxi) a trolley tank, (xxii) a mask, (xxiii) a mask box, or (xxiv) other equipment / facilities. In some embodiments, a measure of electrostatic field strength determined by device 102 corresponds to at least one of a measure of electrostatic charge accumulation, a voltage level 126, an amplitude of the electrostatic field strength, or another measure. In other embodiments, device 102 may also be used to determine measures of other properties, such as a dimension of surface 106 of target object 104 or a distance from reflectance detector 124 to surface 106 of target object 104. The disclosure does not limit the application of device 102.

[0010] In some embodiments, the device 102 includes a ring light source 116 configured to emit a light signal 108 toward the target object 104. In some embodiments, the ring light source 116 includes a plurality of photodiodes 1161, such as injection light-emitting diodes, laser diodes, light-emitting diodes, or other light-generating devices, etc. In one embodiment, the ring light source 116 is a laser source in a ring shape and configured to emit a laser signal 108 toward the target object 104. The laser signal 108 includes at least one of a series of laser pulses or a continuous laser. The disclosure is not limited thereto. In some embodiments, the ring light source 116 performs laser scan cycles in which the ring light source 116 uses the light signal 108 to scan the target object 104 in at least one of a horizontal direction and a vertical direction.In some embodiments, the light signal 108 impinges on multiple points on the surface 106 of the target object 104 in a scan cycle performed using the ring light source 116. The duration of a scan cycle performed by the ring light source 116 is between about one microsecond and about 1 second. Other values ​​for the duration are within the scope of the present disclosure.

[0011] Fig. 2 shows a perspective view of a device according to some embodiments. With reference to Fig. 1 and Fig. 2, in some embodiments, the ring light source 116 has a ring shape and is configured to enclose the reflection detector 124. Specifically, the ring light source 116 includes a plurality of photodiodes 1161 evenly distributed throughout the ring light source 116 such that the reflection detector 124 is surrounded by the photodiodes 1161. In one embodiment, the photodiodes 1161 may be laser diodes or the like. Accordingly, the laser signal 108 emitted by the photodiodes 1161 may more evenly impinge on the surface 106 of the target object 104, and a reflection signal reflected by the surface 106 of the target object 108 may be more evenly received by the reflection detector 124.

[0012] In some embodiments, device 102 includes a reflection detector 124 disposed within and surrounded by ring light source 116, wherein reflection detector 124 is configured to receive a reflection signal 118 including light from light signal 108 that has been reflected by surface 106 of target object 104. In one embodiment, the reflection signal includes first harmonic light 120, "ω," and second harmonic light 122, "2ω." Second harmonic light 122 is generated by second harmonic generation (also referred to as frequency doubling) that occurs when the light from light signal 108 is reflected by surface 106 of target object 104.As a result of the second harmonic generation, two photons of light from the light signal 108 combine to create a new photon in the reflection signal with approximately twice the energy of the two photons, approximately twice the frequency of the two photons, and approximately half the wavelength of the two photons. Therefore, a reflected wavelength of the second harmonic light 122 in the reflection signal 118 is approximately half the (original) wavelength of the first harmonic light 120 in the reflection signal 118.

[0013] In some embodiments, the reflection detector 124 may further include at least one light sensor 136, an optical filter 134, and one or more lenses. The one or more lenses are configured to direct the reflection signal 118 to the optical filter 134. In some embodiments, the one or more lenses include at least one of a focusing lens 120, a polarized lens 132, or one or more other lenses. In some embodiments, the focusing lens 130 is configured to channel light incident on the focusing lens 130 to at least one of the polarized lens 132 or the optical filter 134.In some embodiments, implementing the reflection detector 124 with the focusing lens 130 allows more light of the reflection signal 118 to reach at least one of the optical filter 134 and the light sensor 136 compared to embodiments without the focusing lens 130, thereby improving the accuracy of a signal generated by the light sensor 136. In some embodiments, the polarized lens 132 is configured to optically polarize photons of light incident on the polarized lens 132 and guide polarized photons to the optical filter 134. In some embodiments, implementing the reflection detector 124 with the polarized lens 132 provides higher resolution of a signal generated by the light sensor compared to embodiments without the polarized lens 132.

[0014] In some embodiments, the optical filter 134 comprises at least one of a bandpass filter or another type of filter. The optical filter 134 is configured to block light having a wavelength outside a defined range of wavelengths 128 and to provide filtered light having a wavelength within the defined range of wavelengths 128 from the reflection signal 118. Accordingly, light having a wavelength outside the defined range of wavelengths 128 is at least absorbed, filtered, or not transmitted to the light sensor 136, whereas light having a wavelength within the defined range of wavelengths 128 passes through the optical filter 134 to the light sensor 136. The defined range of wavelengths 128 ranges from a wavelength w1 to a wavelength w2.Accordingly, light with a wavelength below the wavelength w1 or above the wavelength w2 is blocked by the optical filter 134.

[0015] In some embodiments, the defined range of wavelengths 128 includes a wavelength w3 equal to half a light signal wavelength of the light signal 108 generated by the ring light source 116. The light signal wavelength of the light signal 108 is equal to a wavelength of the first harmonic light 120 of the reflection signal 118. Accordingly, the second harmonic light 122, which has a wavelength w3 equal to half the light signal wavelength, passes through the optical filter 134 to the light sensor 136. In some embodiments, the wavelength w2, which corresponds to an upper limit of the defined range of wavelengths 128, is shorter than the light signal wavelength. Accordingly, the first harmonic light 120 in the reflection signal 118 is blocked by the optical filter 134 and not transmitted to the light sensor 136.In some embodiments, the wavelength w1, which corresponds to a lower limit of the defined range of wavelengths 128, is greater than half of the wavelength w3, so that the optical filter 134 blocks at least one of third harmonic light, fourth harmonic light, etc. in the reflection signal 118.

[0016] For example, in one embodiment, the light signal wavelength of the light signal 108 is about 850 nanometers, and therefore, the wavelength w3 of the second harmonic light 122 is about 425 nanometers. In some embodiments, the wavelength w2, which corresponds to the upper limit of the defined range of wavelengths 128, is equal to a value greater than 425 nanometers and less than 850 nanometers. In some embodiments, a wavelength w1, which corresponds to the lower limit of the defined range of wavelengths 128, is equal to a value greater than 212.5 nanometers and less than 425 nanometers. Other values ​​for the light signal wavelength and the wavelengths w1, w3, and w3 are within the scope of the present disclosure.

[0017] Therefore, according to some embodiments in this disclosure, the optical filter 134 delivers the second harmonic light 122 to the light sensor 136 while blocking at least one of the first harmonic light 120 or other harmonics from reaching the light sensor 136. Other implementations of the optical filter 134 are within the scope of the present disclosure.

[0018] Accordingly, the light sensor 136 is configured to generate an electrical signal based on the filtered light provided by the optical filter 134. In some embodiments, the electrical signal indicates a measure of the intensity of the filtered light. In some embodiments, the measure of the intensity of the filtered light approximately corresponds to a measure of the intensity of the second harmonic light 122 due at least in part to the fact that the filtered light includes the second harmonic light 122 and light other than the second harmonic light 122 has been filtered from the filtered light by the optical filter 134. In some embodiments, the light sensor 136 includes an array of photodiodes 138.A photodiode of the array of photodiodes 138 is configured to generate current of the electrical signal, wherein an amount of current generated by the photodiode depends on an amount of photons reaching the photodiode. The photons are at least one of photons that have been captured, detected, or converted into electrons by the photodiode. In some embodiments, the electrical signal generated by the light sensor 136, which has at least one of a higher voltage or a higher current, indicates a higher degree of the strength of the filtered light. In some embodiments, the ring light source 116 and the reflection detector 124 are integrated as a detection device 101 for detecting the electrostatic field strength. That is, the detection device 101 may be a device for detecting the electrostatic field strength.

[0019] In some embodiments, device 102 includes a processor 140 configured to determine a plurality of measures of electrostatic field strength at surface 106 of target object 104 based on the electrical signal generated by light sensor 136. In some embodiments, a measure of electrostatic field strength among the plurality of measures of electrostatic field strength corresponds to at least one of a measure of electrostatic charge accumulation, a voltage level, an amplitude of the electrostatic field strength, or another measure.

[0020] In some embodiments, the multiple measures of electrostatic field strength are associated with multiple points or regions of surface 106 of target object 104. A first measure of electrostatic field strength among the multiple measures of electrostatic field strength is associated with a first point or region of surface 106 and corresponds to at least one of a measure of electrostatic charge accumulation associated with the first point or region, a voltage level associated with the first point or region, an amplitude of the electrostatic field strength associated with the first point or region, or another measure associated with the first point or region.A second measure of electrostatic field strength among the plurality of measures of electrostatic field strength is associated with a second point or region of the surface 106 and corresponds to at least one of a measure of electrostatic charge accumulation associated with the second point or region, a voltage level associated with the second point or region, an amplitude of electrostatic field strength associated with the second point or region, or another measure associated with the second point or region.

[0021] In some embodiments, the multiple measures of electrostatic field strength are associated with a scan cycle in which the ring light source scans the light signal 108 across the multiple points or regions of the surface 106 of the target object. At least one of the first measure of electrostatic field strength is generated based on a reflection of the light signal 108 at the first point or region during the scan cycle, the second measure of electrostatic field strength is generated based on a reflection of the light signal 108 at the second point or region during the scan cycle, and so on.

[0022] In some embodiments, the first measure of electrostatic field strength is generated based on a first measure of strength indicated by the electrical signal generated by the light sensor 136. The first measure of strength is generated based on filtered light filtered by the optical filter 134 from the first light of the reflection signal 118, wherein the first light of the reflection signal 118 includes light of the light signal 108 reflected by the first point or region of the surface 106 of the target object. In some embodiments, the processor 140 performs one or more acts, such as one or more mathematical operations, using the first measure of strength to determine the first measure of electrostatic field strength.The first measure of electrostatic field strength is a function of at least one of the first measure of strength, a distance between the reflection detection device 124 and the first point or region of the surface 106, or another value.

[0023] In some embodiments, the second measure of electrostatic field strength is generated based on a second measure of strength indicated by the electrical signal generated by the light sensor 136. The second measure of strength is generated based on filtered light filtered by the optical filter 134 from the second light of the reflection signal 118, wherein the second light of the reflection signal 118 includes light of the light signal 108 reflected by the second point or region of the surface 106 of the target object. In some embodiments, the processor 140 performs one or more acts, such as one or more mathematical operations, using the second measure of strength to determine the second measure of electrostatic field strength.The second measure of electrostatic field strength is a function of at least one of the second measure of strength, a distance between the reflection detection device 124 and the second point or region of the surface 106, or another value.

[0024] Fig. 3 shows a schematic view of a device according to some embodiments. Fig. Figure 4 shows a partially enlarged view of a device according to some embodiments. The ring light source 116 shown in Fig. 3 to Fig. 5 includes many elements that are the same or similar to the ring light sources 116 disclosed in the previous embodiments. For clarity and simplicity, a detailed description of the same or similar elements may be omitted, and the same or similar reference numerals designate the same or similar components. With reference to both Fig. 3 as well as on Fig. 4, the ring light source 116 in the embodiment includes a plurality of first photodiodes 1161 and a plurality of second photodiodes 1162. The first photodiodes 1161 are configured to emit a first light signal 108a having a first wavelength toward the target object 104, and the second photodiodes 1162 are configured to emit a second light signal 108b having a second wavelength toward the target object 104. The first wavelength of the first light signal 108a differs from the second wavelength of the second light signal 108b in order to detect the electrostatic field strengths of different materials at the surface 106 of the target object 104. In the present embodiment, the ring light source 116 is a laser source in a ring shape.Accordingly, the first photodiodes 1161 are laser diodes configured to emit the first laser signal 108a at the first wavelength, and the second photodiodes 1162 are laser diodes configured to emit the second laser signal 108b at the second wavelength. However, the disclosure is not limited thereto. In other embodiments, the ring light source 116 may be a laser source, a radio source, a UV source, a visible light source, a near-infrared light source, a source of ultrasonic waves, etc. The ring light source 116 may use LiDAR (Light Detection and Ranging), radar, or an ultrasonic wave to measure a property of the surface of the target object 104. The property includes an electrostatic field strength at the surface 106 of the target object, a dimension of the surface 106 of the target object 104, or a distance from the reflection detector 124 to the surface of the target object 104.The reflection detector 124 is arranged within and surrounded by the ring light source 116 and configured to receive a first reflection signal 118a of the first light signal 108a and a second reflection signal 118b of the second light signal 108b reflected by the surface 106 of the target object 104, and to generate a first electrical signal and a second electrical signal based on the first reflection signal 118a and the second reflection signal 118b, respectively.

[0025] In some embodiments, a power of the first light signal 108a emitted by the first photodiodes 1161 is approximately equal to a power of the second light signal 108b emitted by the second photodiodes 1162, so that the light signals 108a, 108b impinging on the surface 106 of the target object 104 are approximately equal, and the filtered light filtered from the reflected signals 108a, 108b and reaching the light sensor 136 is approximately equal. In one embodiment, a number of the first photodiodes 1162 is equal to a number of the second photodiodes 1162. Referring to Fig. 3 and Fig. 4, the first photodiodes 1161 and the second photodiodes 1162 are arranged alternately around the ring light source 116 in the embodiment. Specifically, the first photodiodes 1161 are arranged radially in a plurality of columns, and the second photodiodes 1162 are also arranged radially in a plurality of columns. The columns of the first photodiodes 1162 and the columns of the second photodiodes 1162 are arranged alternately around the ring light source 116. Accordingly, the first photodiodes 1161 and the second photodiodes 1162 are evenly distributed over the ring light source 116, and the power (total) of the first light signal 108a emitted by the first photodiodes 1161 is equal to the power (total) of the second light signal 108b emitted by the second photodiodes 1162.

[0026] With reference to Fig. 3 and Fig. 5, the first photodiodes 1162 in the embodiment are arranged as a plurality of rings surrounding the reflection detector 124 at the center of the ring light source 116, and the second photodiodes 1162 are also arranged as a plurality of rings surrounding the reflection detector 124 at the center. The rings of the first photodiodes 1161 and the rings of the second photodiodes 1162 are arranged alternately and concentrically to surround the reflection detector 124 at the center of the ring light source 116. Accordingly, the first photodiodes 1161 and the second photodiodes 1162 are evenly distributed over the ring light source 116. In the embodiments, the number of first photodiodes 1161 does not necessarily have to be equal to the number of second photodiodes 1162, but the power of the first light signal 108a emitted by the first photodiodes 1161 is equal to the power of the second light signal 108b emitted by the second photodiodes 1162.In other embodiments, the power of the first light signal 108a emitted by the first photodiodes 1161 need not be equal to the power of the second light signal 108b emitted by the second photodiodes, as long as the processor 140 adjusts the results according to the power difference between the first light signal 108a and the second light signal 108b. It is noted that in the embodiment of FIG. Fig. 3 to Fig. 5, two sets of photodiodes 1161, 1162 are shown for emitting two light signals with different wavelengths, but more than two sets of photodiodes may be provided in the ring light source 116 to emit more than two light signals with more than two different wavelengths to detect the electrostatic field strengths of more than two different materials on the target object 104.

[0027] With reference to Fig. 3, in some embodiments, the ring light source 116 performs light scanning cycles in which the ring light source 116 emits the first light signal 108a and the second light signal 108b to scan the target object 104 in at least one of a horizontal direction and a vertical direction. The ring light source 116 has a ring shape and is configured to surround the reflection detector 124. The first photodiodes 1161 and the second photodiodes 1162 are evenly distributed throughout the ring light source 116 such that the reflection detector 124 is surrounded by the first photodiodes 1161 and the second photodiodes 1162.Accordingly, both the first light signal 108a emitted by the first photodiodes 1161 and the second light signal 108b emitted by the second photodiodes 1162 can impinge more evenly on the surface 106 of the target object 104, so that the reflection signal 118a, 118b reflected by the surface 106 of the target object 104 can be received more evenly by the reflection detector 124.

[0028] In some embodiments, the reflection detector 124 is configured to receive the first reflection signal 118a and the second reflection signal 118b reflected by the surface 106 of the target object 104. For example, if the reflection signal 118a is used, the reflection signal 118a contains light of the first harmonic 120a, "ω a “, and light of the second harmonic 122a, “2ω a". The second harmonic light 122a is generated via the generation of a second harmonic (also referred to as frequency doubling), which occurs when the light of the light signal 108a is reflected by the surface 106 of the target object 104. As a result of the generation of a second harmonic, two photons of the light of the light signal 108a combine to create a new photon in the reflection signal 118a with approximately twice the energy of the two photons, approximately twice the frequency of the two photons, and approximately half the wavelength of the two photons. Likewise, the reflection signal 118b contains first harmonic light 120b, "ω b “, and light of the second harmonic 122b, “2ω b“, and two photons of the light of the light signal 108b are combined to produce a new photon in the reflection signal 118b with approximately twice the energy of the two photons, approximately twice the frequency of the two photons, and approximately half the wavelength of the two photons.

[0029] That is, the reflected wavelength of second harmonic light 122a in reflection signal 118a is approximately half the (original) wavelength of first harmonic light 120a in reflection signal 118a. Likewise, the reflected wavelength of second harmonic light 122b in reflection signal 118b is approximately half the (original) wavelength of first harmonic light 120b in reflection signal 118b. And because the wavelength of first light signal 108a is different from the wavelength of second light signal 108b, the wavelength of first harmonic light 120a from first light signal 108a is different from the wavelength of first harmonic light 120b from second light signal 108b.Accordingly, the wavelength of the second harmonic light 122a from the first light signal 108a differs from the wavelength of the second harmonic light 122b from the second light signal 108b.

[0030] In some embodiments, the reflection detector 124 includes a first optical filter 134a and a second optical filter 134b. The first optical filter 134a is configured to filter the first reflection signal 118b and provide, from the first reflection signal 118a, a first filtered light having a wavelength within a first defined range of wavelengths 128a. The second optical filter 134b is configured to filter the second reflection signal 118b and provide, from the second reflection signal 118b, a second filtered light having a wavelength within a second defined range of wavelengths 128b.Accordingly, light with a wavelength outside the defined range of wavelengths 128a and 128b is at least absorbed, filtered, or not transmitted to the light sensor 136, whereas light with a wavelength within the defined range of wavelengths 128a, 128b passes through the corresponding optical filter 134a, 134b to the light sensor. The defined range of wavelengths 128a ranges from a wavelength w1 to a wavelength w2, and the defined range of wavelengths 128b ranges from a wavelength w1' to a wavelength w2'.

[0031] In some embodiments, the defined range of wavelengths 128a includes a wavelength w3 equal to half a light signal wavelength of the first light signal 108a generated by the first photodiodes 1161, while the defined range of wavelengths 128b includes a wavelength w3' equal to half a light signal wavelength of the second light signal 108b generated by the second photodiodes 1162. In one embodiment, the light signal wavelength of the light signal 108a is equal to a wavelength of the first harmonic light 120a of the reflection signal 118a. Accordingly, the second harmonic light 122, having a wavelength w3 equal to half the signal light wavelength, passes through the first optical filter 134a to the light sensor 136.In some embodiments, the wavelength w2, which corresponds to an upper limit of the defined range of wavelengths 128a, is shorter than the light signal wavelength. Accordingly, the first harmonic light 120 in the reflection signal 118a is blocked by the first optical filter 134a and not transmitted to the light sensor 136. In some embodiments, the wavelength w1, which corresponds to a lower limit of the defined range of wavelengths 128a, is greater than half of the wavelength w3, so that the first optical filter 134a blocks at least one of the third harmonic light, the fourth harmonic light, etc. in the reflection signal 118a.

[0032] Likewise, the second harmonic light 122b in the reflection signal 118b passes through the second optical filter 134b to the light sensor 136, and the first harmonic light 120b in the reflection signal 118b is blocked by the second optical filter 134b and not transmitted to the light sensor 136. Furthermore, the second optical filter 134b blocks at least one of the third harmonic light, the fourth harmonic light, etc., in the reflection signal 118b. Therefore, according to some embodiments in this disclosure, the optical filter 134b delivers the second harmonic light 122a, 122b to the light sensor 136 while blocking at least one of the first harmonic light 120a, 120b or other harmonics from reaching the light sensor 136. Other embodiments of the optical filters are within the scope of the present disclosure.

[0033] In some embodiments, the reflection detector 124 further comprises a first optical sensor 135a and a second optical sensor 135b. The first optical sensor 135a is configured to receive the first filtered light, e.g., second harmonic light 122a, passing through the first optical filter 134a and having the wavelength within the defined range of wavelengths 128a. The second optical sensor 135b is configured to receive the second filtered light, e.g., second harmonic light 122b, passing through the second optical filter 134b and having the wavelength within the defined range of wavelengths 128b.

[0034] In some embodiments, the reflection detector 124 further includes one or more lenses 130, 132 configured to direct the first reflection signal 118a to the first optical filter 134a and the second reflection signal 118b to the second optical filter 134b. The one or more lenses comprise at least one of a focusing lens 130, a polarized lens 132, or one or more other lenses. In some embodiments, the focusing lens 130 is configured to channel the light incident on the focusing lens 130 to at least one of the polarized lens 132 or the optical filters 134a, 134b.In some embodiments, implementing the reflection detector 124 with the focusing lens 130 ensures that more light of the reflection signal 118a, 118b reaches the corresponding optical filters 134a and 134b compared to embodiments without the focusing lens 130, thereby improving the accuracy of a signal generated by the light sensor 136. In some embodiments, the polarized lens 132 is configured to polarize photons of light incident on the polarized lens 132 and guide polarized photons to the corresponding optical filters 134a and 134b. In some embodiments, implementing the reflection detector 124 with the polarized lens ensures a higher resolution of a signal generated by the light sensor 136 compared to embodiments without the polarized lens 132.

[0035] Accordingly, the light sensor 136 is configured to generate a first electrical signal and a second electrical signal based on the filtered light provided by the optical filters 134a, 134b. In some embodiments, the electrical signal indicates a measure of the intensity of the filtered light. In some embodiments, the measure of the intensity of the filtered light corresponds to a measure of the intensity of the second harmonic light 122a and 122b due at least in part to the fact that the filtered light includes the second harmonic light 122a and 122b and light other than the second harmonic light 122a and 122b has been filtered from the filtered light by the optical filters 134a, 134b. In some embodiments, the light sensor 136 includes an array of photodiodes 138.A photodiode of the array of photodiodes 138 is configured to generate the stream of electrical signals, wherein an amount of current generated by the photodiode depends on an amount of photons reaching the photodiode. The photons are at least one of photons captured, detected, or converted into electrons by the photodiode. In some embodiments, the first electrical signal and second electrical signal generated by the light sensor 136, which have at least one of a higher voltage or a higher current, indicate a higher degree of the intensity of the filtered light.

[0036] In some embodiments, the processor 140 generates an electrostatic field strength map based on the plurality of electrostatic field strength measures. The electrostatic field strength map indicates the plurality of electrostatic field strength measures. In some embodiments, the electrostatic field strength map indicates the plurality of points or regions of the surface 106 of the target object 104 associated with the plurality of electrostatic field strength measures. In some embodiments, the electrostatic field strength map includes an array of values, where a value in the array is associated with a point or region of the surface 106 of the target object 104 and indicates a electrostatic field strength measure associated with the point or region.In some embodiments, a first value of the array of values ​​is associated with the first point or region of surface 106 and indicates the first measure of electrostatic field strength. A second value of the array of values ​​is associated with the second point or region of surface 106 and indicates the second measure of electrostatic field strength.

[0037] In some embodiments, the electrostatic field strength map includes an electrostatic field strength image. In some embodiments, the electrostatic field strength image indicates the plurality of electrostatic field strength measures and the plurality of points or regions of the surface 106 of the target object 104 associated with the plurality of electrostatic field strength measures. In some embodiments, the processor 140 includes an image signal processor configured to generate the electrostatic field strength image. In some embodiments, the electrostatic field strength image is a color-coded image in which a color of a pixel of the electrostatic field strength image indicates a electrostatic field strength measure associated with a point of the surface 106 of the target object 104 corresponding to the pixel.

[0038] In some embodiments, processor 140 determines a plurality of pixel colors of the electrostatic field strength image based on the plurality of electrostatic field strength measures. In some embodiments, processor 140 determines a first pixel color of the plurality of pixel colors based on the first electrostatic field strength measure associated with the first point or region. Processor 140 generates one or more pixels of the electrostatic field strength image according to the first pixel color. At least one of a shade, tint, hue, color, etc., is based on the first electrostatic field strength measure. The one or more pixels of the electrostatic field strength image correspond to the first point or region of surface 106.

[0039] In some embodiments, processor 140 determines a second pixel color of the plurality of pixel colors based on the second electrostatic field strength measure associated with the second point or region. Processor 140 generates one or more pixels of the electrostatic field strength image according to the second pixel color. At least one of a shade, tint, hue, color, etc., is based on the electrostatic field strength measure. The one or more pixels of the electrostatic field strength image correspond to the second point or region of surface 106.

[0040] In some embodiments, at least one of a shade, tint, hue, color, etc. of the first pixel color differs from at least one of a shade, tint, hue, color, etc. of the second pixel color when the first electrostatic field strength measure is different from the second electrostatic field strength measure. In one embodiment, at least one of a first range of electrostatic field strength measures corresponds to red, a second range of electrostatic field strength measures corresponds to blue, a third range of electrostatic field strength measures corresponds to violet, etc. In some embodiments, the first range of electrostatic field strength measures is associated with varying shades, tints, hues, etc.of red, wherein a higher measure of electrostatic field strength in the first region corresponds to a darker or lighter shade, a darker or lighter coloration, a darker or lighter hue, etc. of red than a lower measure of electrostatic field strength in the first region.

[0041] In some embodiments, the device 102 includes an image sensor configured to generate a visual image of the target object 104. In some embodiments, the image sensor is part of the processor 140 or separate from the processor 140. The image sensor includes at least one of a charge-coupled device (CCD) image sensor, a complementary metal oxide semiconductor (CMOS) image sensor, a contact image sensor (CIS), a recording film, or another device. The image sensor generates the visual image as a visual representation of the target object 104. In some embodiments, the processor 140, such as the image signal processor of the processor 140, generates the electrostatic field strength image based on the multiple measures of the electrostatic field strength and the visual image.In some embodiments, the processor 140 generates the electrostatic field strength image using the sight image and the plurality of pixel colors determined based on the plurality of electrostatic field strength measures, such as by combining the sight image with the plurality of pixel colors to generate the electrostatic field strength image. In some embodiments, the processor 140 modifies the sight image based on the plurality of pixel colors to generate the electrostatic field strength image. In some embodiments, the electrostatic field strength image is a visual representation of the target object 140 and the plurality of electrostatic field strength measures.

[0042] In some embodiments, the device 102 is positioned to face the target object 104 so that the light signal 108 is emitted toward the target object 104. In some embodiments, the device 102 performs the following steps: determining measures of electrostatic field strength associated with the target object 104, generating maps of electrostatic field strength associated with the target object 104, or detecting one or more electrostatic events associated with the target object 104 during at least one of ongoing operation of the target object 104, before operation of the target object 104, or after operation of the target object 104.In some embodiments, the target object 104 is a semiconductor manufacturing tool, and the operation of the target object 104 corresponds to a state of the target object in which the target object 104 is actively used to perform one or more operations, such as at least one of passing a fluid through a tube, performing CVD, performing plasma CVD, performing high-density plasma CVD, performing a surface treatment, performing a plasma surface treatment, performing an implantation process, performing PVD, performing plasma-enhanced PVD, performing etching, performing a dry etch, performing a wet etch, performing a plasma etch, activating a robotic arm, etc.

[0043] In some embodiments, the target object 104 is used in a manufacturing facility, such as an industrial manufacturing facility, where semiconductor devices are manufactured. In some embodiments, the target object 104 is used to perform one or more semiconductor manufacturing acts that correspond to at least a portion of a semiconductor manufacturing process performed to at least partially manufacture the semiconductor devices. In some embodiments, the one or more semiconductor manufacturing acts correspond to at least one of front-end-of-line (FEOL) manufacturing, back-end-of-line (BEOL) manufacturing, semi-finished product manufacturing, or other types of semiconductor manufacturing. In some embodiments, the target object 104 corresponds to a facility that directly processes the semiconductor devices.In some embodiments, the target object 104 corresponds to a device that manages at least one of a temperature, air pressure, humidity, etc. of the manufacturing facility. In some embodiments, the target object 104 corresponds to a device, such as pipes, valves, manifolds, power lines, etc., configured to supply tools in the manufacturing facility with resources including at least one of a gas, a liquid, heat, energy, etc., wherein the resources are used by the tools to perform semiconductor manufacturing acts.In some embodiments, the semiconductor devices comprise at least one of transistors, gate-all-around field-effect transistors (GAA-FETs), metal-oxide-semiconductor field-effect transistors (MOSFETs), fin field-effect transistors (FinFETs), two-dimensional (2D) devices, or other types of semiconductor devices.

[0044] In some embodiments, the device 102 is in a fixed position, such as coupled to a fixedly positioned mount. In some embodiments, the device 102 is coupled to a movable or portable device or vehicle. For example, the device 102 may be integrally formed with a movable device such as an overhead hoist transport (OHT), an automatic material handling system (AMHS), an unmanned aerial vehicle (UAV), a robotic arm, or the like in the industrial manufacturing facility where semiconductor devices are manufactured. In some embodiments, the device 102 is rotatable about an axis, such as coupled to a motor that automatically controls an angular position of the device 102 with respect to the axis.In some embodiments, a range in which device 102 performs at least one of determining the plurality of electrostatic field strength measures or generating the electrostatic field strength map is adjustable. In some devices, increasing the range corresponds to zooming out such that at least one of the electrostatic field strength measures or the electrostatic field strength map covers a larger area. In some embodiments, decreasing the range corresponds to zooming in such that at least one of the plurality of electrostatic field strength measures or the electrostatic field strength map covers a smaller area.

[0045] Embodiments are contemplated in which at least a portion of the device 102, such as at least one of the ring light source 116 or the reflection detector 124, is embodied in an inspection fixture that can be inserted through a cavity, such as in an endoscope-like manner. In some embodiments, the inspection fixture comprises only a portion of the device 102 and is smaller than implementing the entire device 102 as a single package and can therefore be inserted through smaller openings and / or positioned in smaller spaces than the single package. In some embodiments, the inspection fixture is embodied within the target object 104, such as at least one of a process chamber, a valve manifold, a pipe, etc.positioned so that at least one of electrostatic field strength measures, electrostatic field strength maps, or electrostatic events from within the target object 104 is determined. Embodiments are contemplated in which the entire device 102 is implemented as a single package.

[0046] Fig. 6 to Fig. 9 illustrate the generation of the electrostatic field strength map using device 102 according to some embodiments, wherein target object 104 includes a first valve 204, a second valve 206, and a tube 208, such as an insulated tube, configured to conduct a fluid 210 including at least one of a liquid and / or a gas. Fig. Figure 6 shows a perspective view of the device 102 and the target object 104 according to some embodiments. In some embodiments, the device 102 is positioned to face the target object 104 and emits the light signal 108 (in Fig. 1) to the target object 104. The first valve 204 is at least one of a manual valve, an automatic valve, or another type of valve. The second valve 206 is at least one of a manual valve, an automatic valve, or another type of valve. In some embodiments, the fluid is directed from the second valve 206 through the tube 208 to the first valve 204.

[0047] Fig. Figure 8 illustrates the visual image (shown by reference numeral 220) of target object 104 generated using the image sensor of device 102, according to some embodiments. Visual image 220 includes a visual representation of target object 104. Fig. 8 shows a representation 230 of the plurality of pixel colors determined based on the plurality of electrostatic field strength measures, according to some embodiments.

[0048] Fig. Figure 9 shows the electrostatic field strength map generated by device 102, according to some embodiments, wherein the electrostatic field strength map includes an electrostatic field strength image 240. In some embodiments, processor 140 combines the visual image 220 (in Fig. 7) with the representation 230 of the multiple pixel colors (in Fig. 8) to display the image 240 of the electrostatic field strength (in Fig. 9). In some embodiments, processor 140 modifies view image 220 based on the plurality of pixel colors to generate electrostatic field strength image 240. In some embodiments, electrostatic field strength image 240 includes a visual representation of target object 104 and the plurality of electrostatic field strength measures.

[0049] With reference to Fig. 3 and Fig. 6, a first material of a first component (e.g., the first valve 204) of the first target object 104 differs from a second material of a second component (e.g., the second valve 206) of the target object 104, and the first wavelength of the first light signal 108a and the second wavelength of the second light signal 108b can be predetermined based on the corresponding material parameters, such as geometry, physical properties, and laser absorption, depending on the material of the first component and the material of the second component. Different materials respond to different laser wavelengths. In general, the second harmonic light 122a and 122b is proportional to the electrostatic field strength, and the electrostatic field strength is inversely proportional to the wavelength of the light signal 108a, 108b and the dielectric constant of the target object 104.That is, the light signal 108a, 108b with the longer wavelength can be selected to measure the electrostatic field strength of a material with a larger dielectric constant. For example, the first material contains buckminsterfullerene known as formula C6o (its dielectric constant is about 4), and the first wavelength of the first light signal 108a for measuring the electrostatic field strength of the first material can be about 1000 nm. The second material contains polyimide (its dielectric constant is about 3 to 4), and the second wavelength of the second light signal 108b for measuring the electrostatic field strength of the second material can be about 900 nm. In one embodiment, the second material contains perfluoroalkoxyalkane (PFA) (its dielectric constant is about 2.1), and the second wavelength of the second light signal 108b for measuring the electrostatic field strength of the second material can be about 850 nm.But the revelation is not limited to this.

[0050] In one embodiment, the first light signal 108a and the second light signal 108b may be emitted simultaneously to measure the electrostatic field strength of the first material and the second material simultaneously, and an electrostatic field strength map is generated that includes an image 240 of the electrostatic field strength for both the first component 204 and the second component 206. In another embodiment, the first light signal 108a and the second light signal 108b may be emitted sequentially (not simultaneously, but with a time delay) to alternately measure the electrostatic field strength of the first material and the second material.For example, the first light signal 108a may first be emitted by the first photodiodes 1161 to measure the electrostatic field strength of the first material, and then the second light signal 108b may be emitted by the second photodiodes 1162 to measure the electrostatic field strength of the second material. Then, the electrostatic field strength map containing the electrostatic field strength image 240 for both the first component 204 and the second component 206 is generated.

[0051] In some embodiments, the electrostatic field strength image 240 (in Fig. 9) via a display 142 (in Fig. 1 and Fig. 3) of the device 102. In some embodiments, the processor 140 updates the display 142 to display an updated and / or current electrostatic field strength image. The processor 140 updates the display 142 at least periodically, continuously, or in response to generating an updated and / or current electrostatic field strength image based on at least one of updated and / or current electrostatic field strength measures or an updated and / or current visual image generated using the image sensor. According to some embodiments, an electrostatic field strength image is displayed via the display 142 in a real-time representation of electrostatic field strength measures of the target object 104.Embodiments are contemplated in which the display 142 is separate from the device 102 and is controlled to display the electrostatic field strength image 240 at least wirelessly or via a physical connection.

[0052] In some embodiments, the processor 140 detects an electrostatic event based on the plurality of electrostatic field strength measures. In some embodiments, the electrostatic event is detected based on the electrostatic field strength map, such as the electrostatic field strength image 240. In some embodiments, the electrostatic event corresponds to at least one of an electrostatic charge accumulation, an electrostatic field hotspot, or a potential ESD event at the target object 104. If the electrostatic event is not detected and / or remedied, the electrostatic event may cause damage to the target object 104 from at least one of an ESD, arcing, micro-arcing, or another event.

[0053] In some embodiments, the processor 140 detects the electrostatic event based on a determination that one or more electrostatic field strength measures among the plurality of electrostatic field strength measures associated with one or more points or regions of the surface 106 of the target object 104 exceeds a threshold electrostatic field strength measure. In some embodiments, the electrostatic event is determined to be associated with the one or more points or regions of the surface 106 of the target object 104. In some embodiments, the processor 140 detects the electrostatic event based on a determination that an area covered by the one or more points exceeds a threshold size.In some embodiments, the one or more electrostatic field strength measures that exceed the threshold electrostatic field strength measure indicate an increased likelihood that an event that may cause damage to the target object 104, such as at least one of an ESD, arcing, micro-arcing, or other event, may occur at the one or more points or regions of the surface 106.

[0054] In some embodiments, processor 140 detects the electrostatic event based on a determination that a change in electrostatic field strength at one or more points or regions of surface 106 of the target object exceeds a threshold change in electrostatic field strength. In some embodiments, the change in electrostatic field strength is determined based on one or more first measures of electrostatic field strength among the plurality of measures of electrostatic field strength associated with the one or more points or regions of surface 106 and one or more second measures of electrostatic field strength associated with the one or more points or regions of surface 106 previously determined by device 102.In some embodiments, the change in electrostatic field strength is determined based on a difference between a measure of electrostatic field strength of the one or more first measures of electrostatic field strength and a measure of electrostatic field strength of the one or more second measures of electrostatic field strength. In some embodiments, the change in electrostatic field strength corresponds to an increase in electrostatic field strength at the one or more points or regions.In some embodiments, the change in electrostatic field strength that exceeds the threshold change in electrostatic field strength indicates an increased likelihood that an event that may cause damage to the target object 104, such as at least one of an ESD, arcing, micro-arcing, or other event, may occur at the one or more points or regions of the surface 106.

[0055] In some embodiments, processor 140 detects the electrostatic event based on a determination that one or more pixels of electrostatic field strength image 240 associated with one or more points or regions of surface 106 of target object 104 have one or more colors of a defined set of colors associated with electrostatic events. In some embodiments, the electrostatic event is determined to be associated with the one or more points or regions of surface 106 of target object 104.In some embodiments, the computer 140 detects the electrostatic event based on at least one of a determination that the one or more pixels having the one or more colors have a pixel density that exceeds a threshold pixel density, or a determination that an amount of the one or more pixels exceeds a threshold amount. In some embodiments, the one or more pixels having at least one of the one or more colors of the defined set of colors, the pixel density that exceeds the threshold pixel density, or the amount that exceeds the threshold amount indicate an increased likelihood that an event that may cause damage to the target object 104, such as at least one of an ESD, arcing, micro-arcing, or other event, is occurring at the one or more points or regions of the surface 106.

[0056] In some embodiments, processor 140 detects the electrostatic event based on identifying a change in pixel color of one or more pixels associated with one or more points or regions of surface 106 of target object 104. In some embodiments, the change in pixel color of the one or more pixels is determined by comparing electrostatic field strength image 240 and a second electrostatic field strength image previously generated by device 102. In some embodiments, the electrostatic event is determined to be associated with the one or more points or regions of the surface of target object 104 based on the one or more pixels associated with the change in pixel color.In some embodiments, the one or more pixels associated with the one or more points or regions that experience a change in pixel color from the second electrostatic field strength image to the electrostatic field strength image 240 indicate an increased likelihood that an event that may cause damage to the target object 104, such as at least one of an ESD, arcing, micro-arcing, or other event, is occurring at the one or more points or regions of the surface 106.

[0057] In some embodiments, the processor 140 detects the electrostatic event based on a pattern in the electrostatic field strength image 240, such as a pattern of pixels. In some embodiments, the electrostatic field strength image 240 is analyzed to identify the pattern. In some embodiments, the pattern corresponds to a set of pixels in the electrostatic field strength image 240. In some embodiments, the electrostatic event is detected based on a pattern comparison with a defined pattern of pixels associated with electrostatic events. In some embodiments, the pattern is compared with multiple defined patterns of pixels associated with electrostatic events to determine that the pattern corresponds to the defined pattern of pixels.In some embodiments, comparing the pattern to the defined set of pixels includes determining a similarity score representing a similarity, such as a visual similarity, between the pattern and the defined pattern of pixels. In some embodiments, it is determined that the pattern corresponds to the defined pattern of pixels based on a determination that the similarity score exceeds a threshold similarity score. In some embodiments, the pattern corresponding to the defined pattern of pixels indicates an increased likelihood that an event that may cause damage to the target object 104, such as at least one of an ESD, arcing, micro-arcing, or other event, may occur at the one or more points or regions of the surface 106 that correspond to the set of pixels of the pattern.

[0058] In some embodiments, the electrostatic field strength schedules generated by device 102 are monitored, such as in real time during the generation of the electrostatic field strength schedules, to detect the electrostatic event. In some embodiments, processor 140 detects the electrostatic event based on the detection of an abnormal event. In some embodiments, monitoring the electrostatic field strength schedules identifies one or more patterns of electrostatic field strength behavior. In some embodiments, the one or more patterns are identified by performing pattern recognition. In some embodiments, the one or more patterns correspond to temporal patterns of electrostatic field strength over time resulting from operation, such as typical operation, of target object 104.In some embodiments, the abnormal event is detected based on identifying a deviation from the one or more patterns. In some embodiments, the deviation from the one or more patterns is associated with one or more points or regions of surface 106. In some embodiments, the abnormal event indicates an increased likelihood that an event that may cause damage to target object 104, such as at least one of an ESD, arcing, micro-arcing, or another event, may occur at the one or more points or regions of surface 106 associated with the abnormal event.

[0059] In some embodiments, processor 140 detects the electrostatic event using a trained machine learning model. In some embodiments, the trained machine learning model is trained using training information that includes electrostatic field strength maps, such as electrostatic field strength images generated over a period of time. In some embodiments, the electrostatic field strength maps are retrieved from an electrostatic field strength map data store used to store the generated electrostatic field strength maps. In some embodiments, the electrostatic field strength maps are generated by device 102.In some embodiments, the electrostatic field strength maps are generated in association with at least one of the target object 104 or one or more components, such as when the electrostatic field strength maps are generated based on electrostatic field strength measurements of at least one of the target object 104 or one or more components determined during the period of time.In some embodiments, the trained machine learning model comprises at least one of an artificial neural network, an artificial intelligence model, a pattern recognition model, a tree-based model, a machine learning model used to perform linear regression, a machine learning model used to perform logistic regression, a decision tree model, a support vector machine (SVM), a Bayesian network model, a k-nearest neighbor (k-NN) model, a k-means model, a random forest model, a machine learning model used to perform dimensionality reduction, a machine learning model used to perform gradient boosting, or another machine learning model.In some embodiments, the trained machine learning model is trained to perform electrostatic event detection to detect electrostatic events. In some embodiments, the trained machine learning model performs abnormal event detection to identify abnormal electrostatic field strength events that are considered to be electrostatic events. In some embodiments, the trained machine learning model performs pattern recognition to identify one or more patterns of electrostatic field strength measurements resulting from operation, such as typical operation, of the target object 104, and detects one or more electrostatic events by identifying a deviation from the one or more patterns.In some embodiments, the trained machine learning model is updated using newly generated electrostatic field strength maps, such as periodically or continuously. In some embodiments, electrostatic field strength maps generated by device 102 are used to update the trained machine learning model in real time as the electrostatic field strength maps are generated. In some embodiments, training and / or updating the trained machine learning model includes adjusting trainable parameters of the trained machine learning model to increase an accuracy of electrostatic event detection performed using the trained machine learning model.

[0060] Fig. Figure 9 shows a first electrostatic event 242 and a second electrostatic event 244 detected by the processor 140, according to some embodiments. In some embodiments, the first electrostatic event 242 is detected based on one or more pixels associated with one or more points or areas associated with the first valve 204 (in Fig. 6). In some embodiments, the first electrostatic event 242 is detected based on a determination that the one or more pixels have one or more colors of the defined set of colors associated with electrostatic events. In some embodiments, the first electrostatic event 242 is detected based on a determination that the one or more pixels indicate electrostatic field strength measures that exceed the threshold electrostatic field strength measure. In some embodiments, the first electrostatic event 242 is detected based on a determination that a change in pixel color over time of the one or more pixels indicates a change in electrostatic field strength that exceeds the threshold change in electrostatic field strength.In some embodiments, the first electrostatic event 242 is detected using the trained machine learning model. In some embodiments, the first electrostatic event 542 is a result of the fluid 210 (in . Fig. 6) such as a high resistance fluid flowing through at least one of the tube 208 or the first valve 204 and introducing an electrostatic charge into the first valve 204.

[0061] Fig. 10 shows a perspective view of a device and a target object according to some embodiments. In some embodiments, the target object 104 comprises at least a portion of a semiconductor processing tool. The semiconductor processing tool includes at least one of a semiconductor processing chamber 304, a semiconductor wafer 310 (e.g., a substrate, a die, etc., and / or a device formed therein, thereon, therefrom, etc. (e.g., a transistor, a diode, etc.) comprising a semiconductor and / or other material(s)), a target 306, a wafer carrier 312, or one or more other components. In some embodiments, the semiconductor wafer 310 and / or one or more other components are merely associated with the semiconductor processing tool and therefore do not necessarily constitute a part of the semiconductor processing tool (e.g.,they are merely arranged in the semiconductor processing tool to be processed). In some embodiments, the semiconductor processing tool includes a PVD tool, a CVD tool, a coating tool, an etch tool, a deposition ...In some embodiments, the one or more electrostatic events comprise an electrostatic event caused by the plasma 314, such as a high-density plasma. In some embodiments, the window 308 is an opening or is made of a material, such as a transparent material, through which the laser signal 108a, 108b and the reflection signal 118a, 118b can pass. Embodiments are contemplated wherein the device 102 generates electrostatic field strength maps associated with electrostatic field strength measures of an exterior of the semiconductor processing chamber 304, such as the exterior wall of the semiconductor processing chamber 304, thereby enabling the device 102 to detect one or more electrostatic events on the exterior of the semiconductor processing chamber 304.

[0062] Fig. 11 shows a perspective view of the device 102 and the target object 104 comprising at least a portion of a semiconductor processing tool, according to some embodiments, wherein the device 102 is positioned within the interior of the semiconductor processing chamber 304. Accordingly, the device 102 generates electrostatic field strength maps associated with electrostatic field strength measurements of the interior of the semiconductor processing chamber, thereby enabling the device 102 to detect one or more electrostatic events within the interior of the semiconductor processing chamber 304.

[0063] Fig. 12 to Fig. 13 illustrate the operation of the device according to some embodiments, wherein the target object 104 includes at least one of a valve manifold box 414 or one or more pipes coupled to the valve manifold box 414. Fig. Figure 12 shows a perspective view of the device 102 and the target object 104 according to some embodiments. In some embodiments, the device 102 is positioned to face the target object 104. In some embodiments, the valve manifold box 414 is configured to distribute a fluid from a source to one or more tools using the one or more tubes. In some embodiments, the tools use the fluid comprising at least one of a gas or a liquid to fabricate semiconductor devices. In some embodiments, the one or more tubes comprise at least one of a tube 404, a tube 406, a tube 408, or a tube 410.In some embodiments, the valve manifold box 414 includes one or more gauges for indicating measurements, such as pressure measurements, associated with at least one of the valves or pipes located within or coupled to the valve manifold box 414. The one or more gauges include at least one of a gauge 418, a gauge 420, a gauge 422, or a gauge 424.

[0064] Fig. 13 shows an image 432 of the electrostatic field strength generated by the device 102, according to some embodiments. Referring to Fig. 12 and Fig. 13, the electrostatic field strength image 432 is generated in some embodiments using measures of the electrostatic field strength over points or regions of the target object 104 including at least one of the valve manifold 414 or the one or more pipes, such as using one or more of the techniques described with reference to Fig. 6 to Fig. 9. In one embodiment, with reference to Fig. 3 and Fig. 12, a first material of a first component (e.g., the valve manifold box 414) from a second material of a second component (e.g., the pipes 404 to 410) of the target object 104. Accordingly, the first wavelength of the first light signal 108a and the second wavelength of the second light signal 108b can be predetermined according to the material of the first component and the material of the second component to measure the electrostatic field strength of the first material and the second material. Then, the electrostatic field strength map, which includes the electrostatic field strength image 432 for both the first component and the component, is generated. The electrostatic field strength image 432 is a visual representation of the target object 104 and the multiple electrostatic field strength measures.

[0065] A third electrostatic event 428 and a fourth electrostatic event 430 are detected by the processor 140 according to some embodiments. In some embodiments, the third electrostatic event 428 is detected based on one or more pixels associated with one or more points or areas associated with the valve manifold box 414 (in Fig. 12). In some embodiments, the third electrostatic event 428 is detected based on a determination that the one or more pixels have one or more colors of the defined set of colors associated with electrostatic events. In some embodiments, the third electrostatic event 428 is detected based on a determination that the one or more pixels indicate electrostatic field strength measures that exceed the threshold electrostatic field strength measure. In some embodiments, the third electrostatic event 428 is detected based on a determination that a change in pixel color over time of the one or more pixels indicates a change in electrostatic field strength that exceeds the threshold change in electrostatic field strength.In some embodiments, the third electrostatic event 428 is detected using the trained machine learning model. In some embodiments, at least one of the third electrostatic event 428 or the fourth electrostatic event 430 is a result of the fluid, such as a high-resistance fluid, flowing through the valve manifold box 414.

[0066] Fig. 14 shows a schematic view of a system 500 according to some embodiments. The system 500 includes at least one of the devices 102 described above, production facility equipment 502 of a production facility, a controller 514, a system 506 for displaying electrostatic information, or one or more client devices 508. In one embodiment, the device 102 may be coupled to a mobile or portable device or vehicle for movement within the production facility. For example, the device 102 may be implemented as a unit with a mobile device 501, such as an overhead hoist (OHT) transport system, an automated material handling system (AMHS), an unmanned aerial vehicle (UAV), a robotic arm, or the like, in an industrial production facility where semiconductor devices are manufactured.so that the device 102 can follow a predetermined route and / or a trajectory of the movable device 501 for transportation on the floor, ceiling, or wall to measure the electrostatic field strength for various devices distributed at different locations in the production facility. In other embodiments, the system 500 can include multiple devices 102 described above to simultaneously measure the electrostatic field strength for various devices distributed at different locations in the production facility. In some embodiments, the devices 102 are electrostatic field monitoring devices used to take measurements of the electrostatic field strength of multiple target objects, such as semiconductor manufacturing components, throughout the production facility. The target objects include at least one of (i) one or more components,which have a PVD system such as a plasma-enhanced PVD system, (ii) one or more components which have a CVD system, (iii) one or more components which have a coating system, (iv) one or more components which have an etching system, (v) one or more components which have a lithography system, (vi) one or more components which have a CMP system, (vii) one or more components which have a semiconductor storage device such as one or more FOUPs, (viii) one or more components which use plasma, (ix) one or more components which have one or more tubes such as one or more conduits or one or more other types of tubes configured to carry at least one of a liquid or a gas, (x) one or more manifolds, (xi) one or more components which have a fluid storage device,(xii) one or more processing chambers, (xiii) one or more pumps, (xiv) one or more robotic arms, (xv) one or more stacking tools, (xvi) one or more management tools, (xvii) one or more handling tools, (xviii) one or more testing devices, (xix) one or more components of an automated material handling system, (xx) one or more components of an automated transport system, (xxi) a transport cart tank, (xxii) one or more masks, (xxiii) one or more mask boxes, or (xxiv) one or more other components.

[0067] In some embodiments, system 500 may include one or more electrostatic field monitoring devices 102 configured to transmit a set of electrostatic field signals 512 to controller 514. In some embodiments, a first electrostatic field signal of the set of electrostatic field signals 512 is provided by a first electrostatic field monitoring device of the electrostatic field monitoring devices 102, a second electrostatic field signal of the set of electrostatic field signals 512 is provided by a second electrostatic field monitoring device of the electrostatic field monitoring devices 102, etc.

[0068] In some embodiments, the first electrostatic field monitoring device is positioned at least proximate a first component of the plurality of components or facing the first component and is configured to at least (i) determine electrostatic field strength measures associated with the first component, (ii) generate electrostatic field strength plots associated with the first component, or (iii) detect electrostatic events associated with the first component. In some embodiments, the first electrostatic field signal is indicative of at least one of the electrostatic field strength measures associated with the first component or the electrostatic field strength plots associated with the first component.In some embodiments, in response to the first electrostatic field monitoring device detecting an electrostatic event, the first electrostatic field monitoring device includes an indication of the electrostatic event in the first electrostatic field signal, thereby informing the controller 514 of the electrostatic event.

[0069] In some embodiments, the second electrostatic field monitoring device is positioned at least proximate a second component of the plurality of components or facing the second component and is configured to at least (i) determine electrostatic field strength measures associated with the second component, (ii) generate electrostatic field strength plots associated with the second component, or (iii) detect electrostatic events associated with the second component. In some embodiments, the second electrostatic field signal is indicative of at least one of the electrostatic field strength measures associated with the second component or the electrostatic field strength plots associated with the second component.In some embodiments, in response to the second electrostatic field monitoring device detecting an electrostatic event, the second electrostatic field monitoring device includes an indication of the electrostatic event in the second electrostatic field signal, thereby informing the controller 514 of the electrostatic event.

[0070] In another embodiment, the first electrostatic field signal of the set 512 of electrostatic field signals and the second electrostatic field signal of the set 512 of electrostatic field signals may be provided by an electrostatic field monitoring device 102 that is implemented in a unit with a movable device such as an overhead hoist (OHT) transport system, a robotic arm, or the like in an industrial manufacturing facility where semiconductor devices are manufactured, such that the electrostatic field monitoring device 102 is configured to be moved between different locations to monitor the electrostatic field of different components in the industrial manufacturing facility.

[0071] Accordingly, the electrostatic field strength monitoring device 102 is moved to be positioned at least immediately adjacent to a first component of the plurality of components or facing the first component, and is configured to at least (i) determine electrostatic field strength measures associated with the first component, (ii) generate electrostatic field strength plots associated with the first component, or (iii) detect electrostatic events associated with the first component. In some embodiments, the first electrostatic field signal is indicative of at least one of the electrostatic field strength measures associated with the first component or the electrostatic field strength plots associated with the first component.In some embodiments, in response to the first electrostatic field monitoring device detecting an electrostatic event, the first electrostatic field monitoring device includes an indication of the electrostatic event in the first electrostatic field signal, thereby informing the controller 514 of the electrostatic event.

[0072] Then, the electrostatic field monitoring device 102 is positioned at least immediately adjacent to a second component of the plurality of components or facing the second component and is configured to at least (i) determine electrostatic field strength measures associated with the second component, (ii) generate electrostatic field strength maps associated with the second component, or (iii) detect electrostatic events associated with the second component. In some embodiments, the second electrostatic field signal is indicative of at least one of the electrostatic field strength measures associated with the second component or the electrostatic field strength maps associated with the second component.In some embodiments, in response to the second electrostatic field monitoring device detecting an electrostatic event, the second electrostatic field monitoring device includes an indication of the electrostatic event in the second electrostatic field signal, thereby informing the controller 514 of the electrostatic event.

[0073] Thus, according to some embodiments, the one or more electrostatic field monitoring devices 102 determine electrostatic field strength information associated with the multiple components throughout the manufacturing facility and provide the electrostatic field strength information to the controller 514 via the set 512 of electrostatic field signals. In some embodiments, the electrostatic field strength information of the set 512 of electrostatic field signals indicates one or more electrostatic events detected by one or more electrostatic field monitoring devices 102.In some embodiments, instead of the one or more electrostatic events being detected by the one or more electrostatic field monitoring devices 102, the set 512 of electrostatic field signals provided by the one or more electrostatic field monitoring devices 102 indicates at least one of electrostatic field strength measures or electrostatic field strength maps associated with the plurality of components, wherein the at least one of the electrostatic field strength measures or electrostatic field strength maps is analyzed by the controller 514 to detect the one or more electrostatic events.

[0074] In one embodiment, the controller 514 includes a set of status indicators 520 associated with components of the plurality of components of the shop floor. In some embodiments, an indicator of the set of status indicators 520 includes a light, such as an indicator light, that indicates whether or not an electrostatic event has been detected at a component in the shop floor, wherein the light indicates that an electrostatic event has been detected at the component when it is in a first state and / or the light indicates that no electrostatic event has been detected at the component when it is in a second state.In some embodiments, the first state corresponds to a first color emitted by the luminaire, such as red or another color, and the second state corresponds to a second color emitted by the luminaire, such as green or another color. The set of state indicators includes at least one of a first indicator "CP1" associated with the first component and a second indicator "CP2" associated with the second component. Of course, more than two indicators associated with more than two components may be used.

[0075] In some embodiments, the controller 514 determines electrostatic state information associated with the plurality of components of the manufacturing facility. The electrostatic state information indicates at least one of whether or not an electrostatic event has been detected at a component of the plurality of components, one or more components of the plurality of components associated with one or more detected electrostatic events, or other information.

[0076] In some embodiments, the controller 514 provides one or more first signals 510 to the shop floor equipment 502. In some embodiments, the one or more first signals 510 are used to control at least a portion of the shop floor equipment 502, such as one, some, and / or all of the shop floor components. In some embodiments, the one or more first signals 510 are generated using a signal generator of the controller 514. The one or more first signals 510 indicate at least one of the electrostatic state information or other information. In some embodiments, the controller 514 sends the one or more first signals 510 to the shop floor equipment 502 wirelessly, such as using a wireless communication device of the controller 514.In some embodiments, the controller 514 sends the one or more first signals 510 to the production site equipment 502 via a physical connection between the controller 514 and the production site equipment 502.

[0077] In some embodiments, the controller 514 sends a second signal 518 to the electrostatic information display system 506. The second signal 518 is generated using the signal generator of the controller 514. In some embodiments, the second signal 518 indicates one or more electrostatic field strength maps, such as one or more electrostatic field strength images generated using electrostatic field monitoring devices of the set of electrostatic field monitoring devices 504. In some embodiments, the second signal 518 indicates one or more detected electrostatic events. In some embodiments, the controller 514 sends the second signal 518 to the electrostatic information display system 506 wirelessly, such as using the wireless communication device of the controller 514.In some embodiments, the controller 514 sends the second signal 518 to the electrostatic information display system 506 via a physical connection between the controller and the electrostatic information display system 506.

[0078] Fig. Figure 15 illustrates an electrostatic information display system 506 that displays information related to electrostatic events, according to some embodiments. In some embodiments, a display 602 of the electrostatic information display system 506 is controlled to display at least one of one or more electrostatic field strength maps, one or more electrostatic field strength measures, alarms for one or more detected electrostatic events, etc.

[0079] In some embodiments, the display 602 displays a first alarm 604 associated with the first electrostatic event 242 and the second electrostatic event 244 associated with at least one of the first valve 204 and the second valve 206. In some embodiments, the first alarm may include information identifying where the first electrostatic event 242 and the second electrostatic event 244 are located. In some embodiments, the first alarm 604 includes a representation of the electrostatic field strength image 240. In some embodiments, the representation of the electrostatic field strength image 240 includes indicia 610 and 612 overlaid on the electrostatic field strength image 240 and identifying regions corresponding to the first electrostatic event 242 and the second electrostatic event 244.

[0080] In some embodiments, the display 602 may also display a second alarm 606 corresponding to the third electrostatic event 428 and the fourth electrostatic event 430 associated with the valve manifold box 414 (in Fig. 12). In some embodiments, the second alarm 606 includes information identifying where the third electrostatic event 428 and the fourth electrostatic event 430 are located. In some embodiments, the second alarm 606 includes a representation of the electrostatic field strength image 432. In some embodiments, the representation of the electrostatic field strength image 432 includes indicia 614 and 616 overlaid on the electrostatic field strength image 432 and identifying areas corresponding to the third electrostatic event 428 and the fourth electrostatic event 430.

[0081] With reference to Fig. 3 and Fig. 15, in some embodiments, the material of the first valve 204 and the second valve 206 differs from the material of the valve manifold box 414 (in Fig. 12). Accordingly, the first wavelength of the first light signal 108a and the second wavelength of the second light signal 108b, respectively emitted by the first photodiodes 1161 and the second photodiodes 1162, can be predetermined to correspond to the material of the first valve 204 and the second valve 206 and the material of the valve manifold box 414, so that the electrostatic field strength of the valves 204, 206 and the valve manifold box 414 is measured. Then, the electrostatic field strength maps containing the electrostatic field strength images 240 and 432 for the valves 204, 206 and for the valve manifold box 414 are generated, respectively.

[0082] Therefore, in accordance with some embodiments, in response to detecting an electrostatic event in the manufacturing facility, the electrostatic information display system 506 automatically informs a viewer of the display 602 of the electrostatic event and the location of the electrostatic event, thereby enabling the viewer to address the electrostatic event before the electrostatic event causes damage to one or more components in the manufacturing facility through at least one of an ESD, arcing, micro-arcing, or other event.

[0083] In some embodiments, the controller 514 sends (in Fig. 14) a third signal 516 to one or more client devices 508. The one or more client devices 508 include at least one of a telephone, a smartphone, a cellular phone, a landline phone, a laptop, a desktop computer, hardware, or other type of client device. The third signal 516 is generated using the signal generator of the controller 514. In some embodiments, the third signal 516 is indicative of one or more electrostatic field strength maps, such as one or more electrostatic field strength images, generated using electrostatic field monitoring devices of the set of electrostatic field monitoring devices 504. In some embodiments, the third signal 516 is indicative of one or more detected electrostatic events.In some embodiments, the controller 514 sends the third signal 516 wirelessly, such as using the wireless communication device of the controller 514, to a client device of the one or more client devices 508. In some embodiments, the controller 514 sends the third signal 516 to a client device of the one or more client devices 508 via a physical connection between the controller 514 and the client device. In one embodiment, a client device of the one or more client devices 508 triggers an alarm based on the third signal 516. In one embodiment, the client device triggers the alarm based on an indication by the third signal 516 that an electrostatic event has been detected in the manufacturing facility. In some embodiments, an alarm message is displayed via the client device in response to the alarm being triggered.The alarm message includes at least one of an indication that an electrostatic event was detected in the manufacturing facility, one or more indications of one or more components of the manufacturing facility where the electrostatic event was detected, or another indication. In some embodiments, in response to the alarm being triggered, an alarm tone is emitted through a speaker connected to the client device. In some embodiments 516, the third signal includes a message, such as one from an email, a text message, etc., sent in response to the detection of an electrostatic event in the manufacturing facility.In some embodiments, in response to the detection of an electrostatic event in the manufacturing facility, a telephone call is made to a client device, such as a landline telephone or a mobile telephone, of the one or more client devices 508 using a dialer of the controller 514.

[0084] In some embodiments, the facility of the manufacturing facilities 502 ceases operation based on a signal from the one or more first signals 512 received by the facility that at least indicates that an electrostatic event has been detected at a component associated with the facility or indicates a command to cease operation of the facility. In some embodiments, the signal indicates the command to cease operation based on a determination by the controller 514 that an electrostatic event has been detected at the component associated with the facility. In some embodiments, the component is at least connected to or a part of the facility that ceases operation.In some embodiments, ceasing operation of the device comprises at least one of turning off one or more components of the device, interrupting power to one or more components of the device, entering an operating mode in which the device does not perform one or more operations, or another action.

[0085] In some embodiments, the device transitions from the first operating mode to the second operating mode based on the signal at least indicating that an electrostatic event has been detected or indicating a command to transition from a first operating mode to a second operating mode. In some embodiments, the first operating mode is a mode in which the device performs one or more first operations, and the second operating mode is a mode in which the device performs one or more second operations that are different from the one or more first operations. In some embodiments, the first operating mode is a mode in which at least one of components of the device is unlocked or access to the component is not blocked, and the second operating mode is a mode in which at least one of the components is locked or access to the component is blocked.In some embodiments, the first mode of operation is a mode in which at least one of the one or more functions of the device is enabled or initiation of a new process using the one or more functions is not blocked, and the second mode of operation is a mode in which at least one of the one or more functions of the device is disabled or initiation of a new process using the one or more functions is blocked.

[0086] Thus, according to some embodiments, in response to detecting an electrostatic event in the factory, the controller 514 controls the facility of the shop floor equipment 502 to automatically perform one or more actions, including at least one of ceasing operation, changing operating modes, disabling one or more functions, or another action, that prevent the detected electrostatic event from causing damage to one or more components in the shop floor due to at least one of ESD, arcing, micro-arcing, or another event.

[0087] Fig. 16 is a flowchart illustrating a method according to some embodiments. In Fig. 16 illustrates a method for measuring the electrostatic field strength of a target object according to some embodiments. Referring to Fig. 3 and Fig.16, at step S110, a light signal including a first light signal 108a having a first wavelength and a second light signal 108b having a second wavelength is emitted toward a target object 104. In some embodiments, the first light signal 108a and the second light signal 108b are generated by the ring light source 116, which includes a plurality of first photodiodes 1161 for emitting the first light signal 108a and a plurality of second photodiodes 1162 for emitting the second light signal 108b. In one embodiment, the ring light source 116 is a laser source in a ring shape and configured to emit a laser signal 108 toward the target object 104. The first wavelength of the first light signal 108a differs from the second wavelength of the second light signal 108b in order to detect the electrostatic field strengths on different materials on the surface 106 of the target object 104.

[0088] In step S120, a reflection signal is received, wherein the reflection signal containing light of the light signal has been reflected by a surface 106 of the target object 104. In one embodiment, the reflection signal includes a first reflection signal 118a and a second reflection signal 118b. That is, the first reflection signal 118a of the first light signal 108a is reflected by the surface 106 of the target object 104, and the second reflection signal 118a of the second light signal 108b is reflected by the surface 106 of the target object 104. In some embodiments, the reflection detector 124 is disposed within and surrounded by the ring light source 116 and configured to receive the first reflection signal 118a of the first light signal 108a and the second reflection signal 118b of the second light signal 108b reflected by the surface 106 of the target object 104.

[0089] At step S130, the reflection signal is filtered to provide filtered light having a filtered wavelength within a defined range of wavelengths. In one embodiment, the first reflection signal 118a is filtered by the optical filter 134a to provide a first filtered light having a filtered wavelength within a defined range of wavelengths 128a, and the second reflection signal 118b is filtered by the optical filter 134b to provide a second filtered light having a filtered wavelength within a defined range of wavelengths 128b.

[0090] At S140, an electrical signal is generated based on the filtered light. In one embodiment, the electrical signal includes a first electrical signal and a second electrical signal. The first electrical signal is generated by the light sensor 136 based on the first filtered light, while the second electrical signal is generated by the light sensor 136 based on the second filtered light.

[0091] At S150, measures of the electrostatic field strength at surface 106 of target object 104 are determined based on the electrical signal. In one embodiment, the measures of the electrostatic field strength at surface 106 of target object 104 are determined based on the first electrical signal and the second electrical signal.

[0092] In some embodiments, processor 140 generates an electrostatic field strength map based on the plurality of electrostatic field strength measures. In some embodiments, computer 140 detects an electrostatic event based on the electrostatic field strength measures. In some embodiments, the electrostatic event is detected based on the electrostatic field strength map. In some embodiments, an alarm indicative of the electrostatic event is displayed via a display 142 or a signal indicative of the electrostatic event is provided.

[0093] In some embodiments, multiple electrostatic field strength maps generated over a period of time in association with the target object 104 are retrieved, and a machine learning model is trained using the multiple electrostatic field strength maps to generate a trained machine learning model. Detection of the electrostatic event is performed using the trained machine learning model.

[0094] In some embodiments, the target object 104 comprises a semiconductor manufacturing facility. In such an embodiment, the semiconductor manufacturing process is initiated in response to a determination that a first electrostatic field strength measure of the one or more electrostatic field strength measures meets a first threshold, such as a first threshold electrostatic field strength measure. In some embodiments, the semiconductor manufacturing component begins performing the semiconductor manufacturing process when the semiconductor manufacturing process is initiated. In some embodiments, the first electrostatic field strength measure meets the first threshold when the first electrostatic field strength measure exceeds the first threshold.In some embodiments, the first measure of electrostatic field strength satisfies the first threshold when the first measure of electrostatic field strength is less than the first threshold. In some embodiments, the semiconductor manufacturing process is initiated in response to a determination that one, some, and / or all of the one or more measures of electrostatic field strength satisfy the first threshold. In some embodiments, the semiconductor manufacturing process is initiated in response to a determination that at least a threshold ratio of the one or more measures of electrostatic field strength satisfies the first threshold.

[0095] In some embodiments, the semiconductor manufacturing process is completed in response to a determination that a second electrostatic field strength measure of the one or more electrostatic field strength measures meets a second threshold, such as a second electrostatic field strength threshold measure. The second electrostatic field strength measure is equal to or different from the first electrostatic field strength measure. The second threshold is equal to or different from the first threshold. In some embodiments, the semiconductor manufacturing component begins one or more semiconductor manufacturing process completion acts to complete the semiconductor manufacturing process. In some embodiments, the one or more completion acts begin at least one of rinsing the semiconductor wafer, drying the semiconductor wafer, or another completion act.In some embodiments, the semiconductor manufacturing component stops performing semiconductor manufacturing actions to complete the semiconductor manufacturing process. In some embodiments, the second measure of electrostatic field strength meets the second threshold when the second measure of electrostatic field strength exceeds the second threshold. In some embodiments, the second measure of electrostatic field strength meets the second threshold when the second measure of electrostatic field strength is less than the second threshold. In some embodiments, the semiconductor manufacturing process is completed in response to a determination that one, some, and / or all of the one or more measures of electrostatic field strength meet the second threshold.In some embodiments, the semiconductor manufacturing process is completed in response to a determination that at least one threshold ratio of the one or more electrostatic field strength measures satisfies the second threshold.

[0096] Based on the above discussions, it is apparent that the present disclosure provides various advantages. However, it should be understood that not all advantages are necessarily discussed in this disclosure, and other embodiments may provide other advantages, and no particular advantage is required for all embodiments.

[0097] According to some embodiments of the disclosure, an apparatus for measuring electrostatic field strength includes an electrostatic field detecting device and a processor. The electrostatic field detecting device includes a ring light source configured to emit a light signal toward a target object, and a reflection detector disposed within and surrounded by the ring light source and configured to receive a reflection signal of the light signal reflected by a surface of the target object and to generate an electrical signal based on the reflection signal. The processor is configured to determine measures of the electrostatic field strength at the surface of the target object based on the electrical signal.In one embodiment, the ring light source comprises a plurality of first photodiodes configured to emit a first light signal having a first wavelength toward the target object, and a plurality of second photodiodes configured to emit a second light signal having a second wavelength toward the target object, wherein the first wavelength differs from the second wavelength. In one embodiment, the reflection signal includes a first reflection signal of the first light signal reflected by the surface of the target object and a second reflection signal of the second light signal reflected by the surface of the target object. In one embodiment, the electrical signal includes a first electrical signal generated based on the first reflection signal and a second electrical signal generated based on the second reflection signal.In one embodiment, the reflection detector comprises a first optical filter, a second optical filter, and a light sensor. The first optical filter is configured to block light of the first reflection signal having a wavelength outside a first defined range of wavelengths and to provide a first filtered light from the first reflection signal having a wavelength within the first defined range of wavelengths. The second optical filter is configured to block light of the second reflection signal having a wavelength outside a second defined range of wavelengths and to provide a second filtered light from the second reflection signal having a wavelength within the second defined range of wavelengths.The light sensor is configured to generate the first electrical signal and the second electrical signal based on the first filtered light and the second filtered light, respectively. In one embodiment, the reflection detector further comprises a first optical sensor coupled to the first optical filter and the light sensor and configured to receive the first filtered light passing through the first optical filter, and a second optical sensor coupled to the second optical filter and the light sensor and configured to receive the second filtered light passing through the second optical filter.In one embodiment, the first light signal or the second light signal has an original wavelength, and the first defined range of wavelengths or the second defined range of wavelengths includes a reflected wavelength substantially equal to half the original wavelength. In one embodiment, the reflection detector comprises one or more lenses configured to direct the first reflection signal to the first optical filter and the second reflection signal to the second optical filter. In one embodiment, the processor is configured to determine a pixel color based on a measure of electrostatic field strength and to generate one or more pixels of an electrostatic field strength map according to the pixel color.In one embodiment, the device for measuring electrostatic field strength comprises a display configured to display the one or more pixels of the electrostatic field strength map.

[0098] According to some embodiments of the disclosure, a detection device includes a ring light source and a reflection detector. The ring light source includes a plurality of first photodiodes configured to emit a first light signal having a first wavelength toward a target object, and a plurality of second photodiodes configured to emit a second light signal having a second wavelength toward the target object. The reflection detector is disposed within and surrounded by the ring light source and configured to receive a first reflection signal of the first light signal and a second reflection signal of the second light signal reflected by a surface of the target object, and to generate a first electrical signal and a second electrical signal, respectively, based on the first reflection signal and the second reflection signal.In one embodiment, a power of the first light signal is substantially equal to a power of the second light signal. In one embodiment, the reflection detector comprises an optical filter and a light sensor. The optical filter is configured to filter the first reflection signal and the second reflection signal and to provide a first filtered light having a first wavelength within a first defined range of wavelengths from the first reflection signal and a second filtered light having a second wavelength within a second defined range of wavelengths from the second reflection signal. The light sensor is configured to generate the first electrical signal and the second electrical signal based on the first filtered light and the second filtered light.In one embodiment, the reflection detector comprises one or more lenses configured to guide the reflection signal to the optical filter. In one embodiment, the detection device further comprises a processor configured to determine measures of a property of the target object based on the first electrical signal and the second electrical signal. In one embodiment, the property includes an electrostatic field strength at the surface of the target object, a dimension of the surface of the target object, or a distance from the reflection detector to the surface of the target object.

[0099] According to some embodiments of the disclosure, a method for measuring the electrostatic field strength of a target object comprises emitting a light signal including a first light signal having a first wavelength and a second light signal having a second wavelength to a target object; receiving a reflection signal including light of the light signal reflected by a surface of the target object; filtering the reflection signal to provide filtered light having a filtered wavelength within a defined range of wavelengths; generating an electrical signal based on the filtered light; and determining measures of the electrostatic field strength at the surface of the target object based on the electrical signal.In one embodiment, the method comprises generating an electrostatic field strength map based on the electrostatic field strength measurements; detecting an electrostatic event based on the electrostatic field strength map; and at least one of displaying an alarm indicative of the electrostatic event via a display; or providing a signal indicative of the electrostatic event. In one embodiment, the method comprises retrieving a plurality of electrostatic field strength maps generated over a period of time in association with the target object; and training a machine learning model using the plurality of electrostatic field strength maps to generate a trained machine learning model, wherein detecting the electrostatic event is performed using the trained machine learning model.In one embodiment, the target object comprises a semiconductor manufacturing facility, and the method further comprises starting, by the semiconductor manufacturing facility, the semiconductor manufacturing process in response to a determination that a first measure of electrostatic field strength meets a first threshold; or completing the semiconductor manufacturing process in response to a determination that a second measure of electrostatic field strength meets a second threshold.

[0100] The above outlines features of several embodiments to enable those skilled in the art to better understand aspects of the present disclosure. Those skilled in the art should understand that they can readily use the present disclosure as a basis for designing or modifying other processes and structures to carry out the same purposes and / or achieve the same benefits as the embodiments presented herein. Those skilled in the art should also recognize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure.

Claims

[1] Device for measuring the electrostatic field strength, comprising a device for detecting an electrostatic field, the a ring light source configured to emit a light signal to a target object; and a reflection detector arranged within and surrounded by the ring light source and configured to receive a reflection signal of the light signal reflected by a surface of the target object and to generate an electrical signal based on the reflection signal, and a processor configured to determine, based on the electrical signal, measures of the electrostatic field strength at the surface of the target object. [2] An electrostatic field strength measuring device according to claim 1, wherein the ring light source a plurality of first photodiodes configured to emit a first light signal having a first wavelength to the target object; and a plurality of second photodiodes configured to emit a second light signal having a second wavelength to the target object, wherein the first wavelength differs from the second wavelength. [3] The electrostatic field strength measuring apparatus according to claim 2, wherein the reflection signal includes a first reflection signal of the first light signal reflected by the surface of the target object and a second reflection signal of the second light signal reflected by the surface of the target object. [4] An electrostatic field strength measuring apparatus according to claim 3, wherein the electrical signal includes a first electrical signal generated based on the first reflection signal and a second electrical signal generated based on the second reflection signal. [5] An electrostatic field strength measuring device according to claim 4, wherein the reflection detector a first optical filter configured to block light of the first reflection signal having a wavelength outside a first defined range of wavelengths and to provide a first filtered light having a wavelength within the first defined range of wavelengths from the first reflection signal; a second optical filter configured to block light of the second reflection signal having a wavelength outside a second defined range of wavelengths and to provide a second filtered light having a wavelength within the second defined range of wavelengths from the second reflection signal; and a light sensor configured to generate the first electrical signal and the second electrical signal, respectively, based on the first filtered light and the second filtered light, has. [6] An electrostatic field strength measuring apparatus according to claim 5, wherein the reflection detector further comprises a first optical sensor coupled to the first optical filter and the light sensor and configured to receive the first filtered light passing through the first optical filter; and a second optical sensor coupled to the second optical filter and the light sensor and configured to receive the second filtered light passing through the second optical filter, has. [7] An electrostatic field strength measuring device according to claim 5 or 6, wherein the first light signal or the second light signal has an original wavelength; and the first defined range of wavelengths or the second defined range of wavelengths includes a reflected wavelength that is substantially equal to half the original wavelength. [8] An electrostatic field strength measuring device according to any one of claims 5 to 7, wherein the reflection detector comprises one or more lenses configured to guide the first reflection signal to the first optical filter and to guide the second reflection signal to the second optical filter. [9] An apparatus for measuring electrostatic field strength according to any one of claims 1 to 8, wherein the processor is arranged to determine a pixel color based on a measure of electrostatic field strength; and to generate one or more pixels of an electrostatic field strength map according to the pixel color. [10] An electrostatic field strength measuring device according to claim 8 or 9, comprising a display arranged to display the one or more pixels of the electrostatic field strength map. [11] Detection device, comprising a ring light source comprising a plurality of first photodiodes configured to emit a first light signal having a first wavelength to a target object and a plurality of second photodiodes configured to emit a second light signal having a second wavelength to the target object; and a reflection detector disposed within and surrounded by the ring light source and configured to receive a first reflection signal of the first light signal and a second reflection signal of the second light signal reflected by a surface of the target object, and to generate a first electrical signal and a second electrical signal, respectively, based on the first reflection signal and the second reflection signal. [12] The detection device of claim 11, wherein a power of the first light signal is substantially equal to a power of the second light signal. [13] Detection device according to claim 11, wherein the reflection detector an optical filter configured to filter the first reflection signal and the second reflection signal and to provide a first filtered light having a first wavelength within a first defined range of wavelengths from the first reflection signal and a second filtered light having a second wavelength within a second defined range of wavelengths from the second reflection signal; and a light sensor configured to generate the first electrical signal and the second electrical signal based on the first filtered light and the second filtered light, has. [14] Detection device according to claim 13, wherein the reflection detector comprises one or more lenses arranged to guide the reflection signal to the optical filter. [15] Detection device according to one of claims 11 to 14, further comprising a processor arranged to determine measures of a property of the target object based on the first electrical signal and the second electrical signal. [16] The detection device of claim 15, wherein the property comprises an electrostatic field strength at the surface of the target object, a dimension of the surface of the target object, or a distance from the reflection detector to the surface of the target object. [17] A method for measuring the electrostatic field strength of a target object, comprising emitting a light signal containing a first light signal having a first wavelength and a second light signal having a second wavelength to a target object; receiving a reflection signal containing light of the light signal reflected by a surface of the target object; Filtering the reflection signal to provide filtered light having a filtered wavelength within a defined range of wavelengths; Generating an electrical signal based on the filtered light; and determining measures of the electrostatic field strength at the surface of the target object based on the electrical signal. [18] A method according to claim 17, comprising Generating an electrostatic field strength map based on the electrostatic field strength measurements; Detecting an electrostatic event based on the electrostatic field strength map; and at least one of Displaying an alarm indicating the electrostatic event via a display; or providing a signal indicating the electrostatic event. [19] A method according to claim 18, comprising Retrieving multiple electrostatic field strength maps generated over a period of time in association with the target object; and Training a machine learning model using the plurality of electrostatic field strength plans to generate a trained machine learning model, wherein detecting the electrostatic event is performed using the trained machine learning model. [20] The method of any one of claims 17 to 19, wherein the target object comprises a semiconductor manufacturing facility, and the method further comprises starting the semiconductor manufacturing process by the semiconductor manufacturing facility in response to a determination that a first measure of the electrostatic field strength meets a first threshold; or completing the semiconductor manufacturing process in response to a determination that a second measure of the electrostatic field strength meets a second threshold, includes.

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