Reactors and Related Methods

Abstract

To provide systems and related methods that can be used for etching and / or depositing materials.SOLUTION: In some embodiments, systems comprise an outer chamber and an inner chamber. The inner chamber can include a lower chamber part and an upper chamber part which are movable with respect to each other between a closed position and an open position. The upper chamber part and the lower chamber part can abut in the closed position. The upper chamber part and the lower chamber part may further define an opening in the open position.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure generally relates to systems and associated methods suitable for performing processes, such as etching a layer on a surface of a substrate, and for forming a layer on a surface of a substrate. [Background technology]

[0002] Modern material deposition and etching systems are subject to ever increasing demands on process parameter control. Therefore, there is a need for systems and methods that allow for improved process parameter control.

[0003] All descriptions, including descriptions of the problems and solutions described in this section, are included in this disclosure solely for the purpose of providing a context for the disclosure, and such descriptions should not be construed as an admission that any or all of the information was known at the time the invention was made or constitutes prior art. Summary of the Invention

[0004] This Summary may introduce selected concepts in a simplified form that may be described in more detail below. This Summary is not necessarily intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter.

[0005] Various embodiments of the present disclosure relate to a system including an outer chamber and an inner chamber. The inner chamber is disposed within an outer space provided within the outer chamber. The inner chamber includes an inner space including a substrate support. The inner chamber includes an upper chamber portion and a lower chamber portion. The upper chamber portion and the lower chamber portion are movable relative to each other between a closed position and an open position. The upper chamber portion and the lower chamber portion abut in the closed position, and the upper chamber portion and the lower chamber portion define an opening in the open position.

[0006] In some embodiments, the inner space and the outer space are not in fluid communication in the closed position, and the inner space and the outer space are in fluid communication in the open position.

[0007] In some embodiments, the inner space and the outer space are in fluid communication by a bypass duct.

[0008] In some embodiments, the aperture has a predetermined aperture size, and the system further comprises an aperture control mechanism, the aperture control mechanism configured to control the aperture size.

[0009] In some embodiments, the aperture control mechanism comprises a linear actuator.

[0010] In some embodiments, the aperture control mechanism comprises a rotary actuator.

[0011] In some embodiments, the system further comprises an active species source operably coupled to the inner chamber.

[0012] In some embodiments, the active species source is in fluid communication with the inner chamber by an active species connector located in the upper chamber section.

[0013] In some embodiments, the activated species source comprises a remote plasma source.

[0014] In some embodiments, the active species source comprises a radical source.

[0015] In some embodiments, the radical source is separated from the inner space by one or more diffusers.

[0016] In some embodiments, the one or more diffusers are selected from a perforated plate and a wire mesh plate.

[0017] In some embodiments, the radical source is separated from the inner space by two or more separators selected from a perforated plate and a wire mesh plate.

[0018] In some embodiments, the radical source comprises a hot wire source.

[0019] In some embodiments, the activated species source comprises an ultraviolet (UV) light source.

[0020] In some embodiments, the system further comprises a showerhead injector.

[0021] In some embodiments, the system further comprises a radio frequency power source and a ground, and the system is configured to generate a plasma between the showerhead injector and the substrate support.

[0022] In some embodiments, the showerhead injector is a dual channel showerhead injector comprising a first set of channels and a second set of channels.

[0023] In some embodiments, the upper chamber portion has a conical shape.

[0024] In some embodiments, the lower chamber portion has a conical shape.

[0025] In some embodiments, the lower chamber portion comprises an exhaust connector in fluid communication with an exhaust device.

[0026] In some embodiments, the outer chamber is in fluid communication with an exhaust system.

[0027] In some embodiments, the system is configured to maintain the outer chamber at an outer chamber pressure and the inner chamber at an inner chamber pressure.

[0028] In some embodiments, the inner chamber pressure and the outer chamber pressure are different.

[0029] In some embodiments, the inner chamber pressure is lower than the outer chamber pressure.

[0030] In some embodiments, the inner chamber pressure is higher than the outer chamber pressure.

[0031] In some embodiments, the system further comprises an inner chamber wall heater for heating at least one of the lower chamber portion and the upper chamber portion.

[0032] In some embodiments, the system further comprises an outer chamber wall heater for heating the wall of the outer chamber.

[0033] In some embodiments, the substrate support comprises a heater.

[0034] In some embodiments, the substrate support comprises a stabilizing mechanism for keeping the substrate support stationary when the upper and lower chamber portions move relative to one another.

[0035] In some embodiments, the system further comprises an ellipsometer.

[0036] In some embodiments, the system further comprises a shell structure surrounding the outer chamber.

[0037] In some embodiments, the system further comprises a first precursor injector and a second precursor injector.

[0038] In some embodiments, the outer chamber is insulated.

[0039] In some embodiments, the system further comprises a load lock.

[0040] In some embodiments, the system further comprises a wafer handling system.

[0041] In some embodiments, the substrate support is coupled to the upper chamber portion.

[0042] Further described herein is a method for controlling one or more reaction conditions in an inner chamber. The inner chamber is disposed within an outer space provided within the outer chamber. The inner chamber comprises an inner space including a substrate support for supporting a substrate. The inner chamber further comprises an upper chamber portion and a lower chamber portion. The upper chamber portion and the lower chamber portion define an opening. The opening has an opening size, and the opening fluidly connects the inner space to the outer space. The method includes maintaining the outer chamber at an outer chamber pressure and maintaining the inner chamber at an inner chamber pressure. The method further includes moving the upper chamber portion relative to the lower chamber portion or moving the lower chamber portion relative to the upper chamber portion with an opening control mechanism. Thus, the opening size is controlled. Controlling the opening size can control at least one process parameter selected from the inner chamber temperature, the inner chamber pressure, the inner chamber pump speed, the inner chamber gas flow rate, the inner chamber process uniformity, and the inner chamber residence time.

[0043] In some embodiments, the outer chamber pressure is lower than the inner chamber pressure.

[0044] In some embodiments, the method further comprises heating at least one of the lower chamber portion and the upper chamber portion.

[0045] In some embodiments, the method further comprises heating a wall of the outer chamber.

[0046] In some embodiments, the method includes heating the substrate by a heater provided in the substrate support.

[0047] Further described is a method for depositing a material on a substrate, comprising providing a system as described herein. The method includes placing a substrate on the substrate support of the system. The method further includes cyclically performing one or more cycles. The cycles include the following steps, in the following order: contacting the substrate with a first precursor; and contacting the substrate with a second precursor. Thus, the material is deposited on the substrate.

[0048] In some embodiments, the steps of contacting the substrate with a first precursor and contacting the substrate with a second precursor are separated by an in-cycle purge.

[0049] In some embodiments, subsequent cycles are separated by an inter-cycle purge.

[0050] In some embodiments, the upper and lower chamber portions are in a closed position during at least one of contacting the substrate with the first precursor and contacting the substrate with the second precursor, and the upper and lower chamber portions are in an open position during at least one of contacting the substrate with the first precursor and contacting the substrate with the second precursor.

[0051] In some embodiments, the upper and lower chamber portions are in a closed position during at least one of an intra-cycle purge and an inter-cycle purge.

[0052] In some embodiments, the upper and lower chamber portions are in an open position during at least one of an intra-cycle purge and an inter-cycle purge.

[0053] Also described herein is a method for depositing a material on a substrate. The method includes providing a system described herein. The method further includes disposing a substrate on a substrate support. The method further includes contacting the substrate with one or more precursors while controlling one or more reaction conditions in the inner chamber according to the methods described herein. Thus, the material is deposited on the substrate.

[0054] Further described herein is a method for etching a material. The method includes providing a system as described herein and disposing a substrate on the substrate support of the system. The method further includes cyclically performing one or more cycles. The cycles include the following steps, in the following order: contacting the substrate with a first reactant and contacting the substrate with a second reactant. Thus, material contained within the substrate is etched.

[0055] In some embodiments, the steps of contacting the substrate with a first reactant and contacting the substrate with a second reactant are separated by an in-cycle purge.

[0056] In some embodiments, subsequent cycles are separated by an inter-cycle purge.

[0057] In some embodiments, the upper and lower chamber portions are in a closed position during at least one of contacting the substrate with a first reactant and contacting the substrate with a second reactant, and the upper and lower chamber portions are in an open position during at least one of contacting the substrate with the first reactant and contacting the substrate with the second reactant.

[0058] In some embodiments, the upper and lower chamber portions are in a closed position during at least one of an intra-cycle purge and an inter-cycle purge.

[0059] In some embodiments, the upper and lower chamber portions are in an open position during at least one of an intra-cycle purge and an inter-cycle purge.

[0060] Further described herein is a method for etching material from a substrate. The method includes providing a system as described herein and disposing a substrate on the substrate support of the system. The method further includes contacting the substrate with one or more reactants while controlling one or more reaction conditions in the inner chamber by a method described herein. Thus, material is etched from the substrate.

[0061] These and other embodiments will become readily apparent to those skilled in the art from the following detailed description of certain embodiments, taken in conjunction with the accompanying drawings, in which: The invention is not limited to any particular embodiment disclosed. [Brief explanation of the drawings]

[0062] A more complete understanding of the embodiments of the present disclosure can be obtained by reference to the detailed description and claims when considered in conjunction with the following illustrative drawings.

[0063] [Figure 1] FIG. 1 is an embodiment of a system (100) described herein.

[0064] [Figure 2] FIG. 2 shows an embodiment of the inner chamber (300) in a closed position.

[0065] [Figure 3] FIG. 3 shows an embodiment of the inner chamber (300) in an open position.

[0066] [Figure 4] FIG. 4 is an exemplary embodiment of the method described herein. [Figure 5]FIG. 5 is an exemplary embodiment of the method described herein. [Figure 6] FIG. 6 is an exemplary embodiment of the method described herein. [Figure 7] FIG. 7 is an exemplary embodiment of the method described herein.

[0067] [Figure 8] FIG. 8 shows an embodiment of the system (100) described herein.

[0068] The following numbers are used throughout Figures 1, 2, 3, and 8: 100 - system, 200 - outer chamber, 300 - inner chamber, 310 - upper chamber section, 320 - lower chamber section, 330 - inner space, 340 - substrate support, 400 - active species source, 420 - active species line, 860 - bypass duct, 870 - exhaust system.

[0069] It will be appreciated that elements in the figures are illustrated for simplicity and clarity and have not necessarily been drawn to scale. For example, the dimensions of some of the elements in the figures may be exaggerated relative to other elements to help to improve understanding of the illustrated embodiments of the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0070] The descriptions of exemplary embodiments of methods, structures, devices, and systems provided below are merely exemplary and intended for purposes of illustration only, and the following descriptions are not intended to limit the scope of the disclosure or the claims. Moreover, the recitation of multiple embodiments having described features is not intended to exclude other embodiments having additional features or other embodiments incorporating different combinations of the described features. For example, various embodiments may be described as exemplary embodiments and recited in the dependent claims. Unless otherwise stated, the exemplary embodiments or components thereof may be combined or applied separately from each other.

[0071] In some embodiments, systems and associated methods are described herein that can be used, for example, for etching and / or depositing materials. In some embodiments, the system includes an outer chamber and an inner chamber. The inner chamber includes a lower chamber portion and an upper chamber portion that are movable relative to one another between a closed position and an open position. The upper and lower chamber portions abut in the closed position. In some embodiments, the inner space contained within the inner chamber and the outer space contained within the outer chamber are not in fluid communication in the closed position. The upper and lower chamber portions further define an opening in the open position. It will be understood that the inner space and the outer space are in fluid communication when the upper and lower chamber portions are in the open position. In other words, in the open position, gas can flow between the inner and outer chambers through the opening between the upper and lower chamber portions. In some embodiments, no gas flows between the inner and outer chambers when the upper and lower chamber portions are in the closed position. In one exemplary mode of operation, the inner chamber is operated at a pressure higher than that used in the outer chamber, such that, in the open position, gas flows from the inner chamber to the outer chamber. In another embodiment, the inner and outer chambers are in fluid communication by a bypass duct so that gas can flow between the inner and outer chambers even when the upper and lower chamber portions are in the closed position, and thus the inner and outer chambers can be maintained at substantially equal pressures regardless of the positions of the upper and lower chamber portions.

[0072] In some embodiments, "gas" can include materials that are gases, vaporized solids, and / or vaporized liquids at ambient temperature and pressure (NTP), and can consist of a single gas or a mixture of gases, depending on the circumstances. Gases other than process gases, i.e., gases introduced without passing through a gas distribution assembly, other gas distribution devices, etc., can be used, for example, to seal the reaction space and can include seal gases, such as noble gases. In some cases, the term "precursor" can refer to a compound that participates in a chemical reaction to produce another compound, and specifically a compound that constitutes the matrix or main framework of a film. The term "reactant" can be used interchangeably with the term precursor. Alternatively, "reactant" can refer to a compound that reacts with the surface of a substrate to form a volatile reaction product. Thus, a "reactant" can be used in both deposition processes or etching processes, or both.

[0073] In some embodiments, a "substrate" can refer to any underlying material or materials that can be used to form a device, circuit, or film, or on which a device, circuit, or film can be formed. The substrate can include bulk materials such as silicon (e.g., monocrystalline silicon), other Group IV materials such as germanium, or other semiconductor materials such as Group II-VI or Group III-V semiconductor materials, and can include one or more layers overlying or underlying the bulk material. Additionally, the substrate can include various features (such as recesses, protrusions, and the like) formed in or on at least a portion of the layers of the substrate. Illustratively, the substrate can include bulk semiconductor material and an insulating or dielectric material layer overlying at least a portion of the bulk semiconductor material. Exemplary substrates include wafers, e.g., silicon wafers, e.g., 200 mm wafers, 300 mm wafers, or 450 mm wafers.

[0074] In some embodiments, "film" and / or "layer" can refer to any continuous or discontinuous structure and material, such as materials deposited by the methods disclosed herein. For example, films and / or layers can include two-dimensional materials, three-dimensional materials, nanoparticles, or partial or complete molecular layers, or partial or complete atomic layers, or clusters of atoms and / or molecules, or layers consisting of isolated atoms and / or isolated molecules. Films or layers can include materials or layers with pinholes, which may or may not be continuous.

[0075] In some embodiments, a "cyclic deposition process" or "cyclical deposition process" can refer to the sequential introduction of precursors (and / or reactants) into a reaction chamber to deposit layers on a substrate, and includes processing techniques such as atomic layer deposition (ALD), cyclical chemical vapor deposition (cyclic CVD), and hybrid cyclical deposition processes that include ALD and cyclical CVD components.

[0076] In some embodiments, "atomic layer deposition" (ALD) can refer to a vapor deposition process in which deposition cycles, typically multiple successive deposition cycles, are performed in a process chamber. As used herein, the term atomic layer deposition is also meant to include processes denoted by related terms, such as chemical vapor deposition atomic layer deposition, atomic layer epitaxy, molecular beam epitaxy (MBE), gas source MBE, metalorganic MBE, and chemical beam epitaxy, when performed with alternating pulses of precursor / reactive gases and purge (e.g., inert carrier) gases.

[0077] In some embodiments, "atomic layer etching" can refer to a gas-phase etching process in which etching cycles, typically multiple sequential etching cycles, are performed in a process chamber. The term "atomic layer deposition" can include processes designated by related terms.

[0078] Furthermore, in this disclosure, any two variables can constitute a workable range for that variable, and any stated range may include or exclude endpoints. Furthermore, any values ​​of a stated variable (whether or not they are expressed as "about") may refer to an exact or approximate value, including equivalents, and may refer to an average, median, representative value, or majority, etc. Furthermore, in this disclosure, the term "comprising" indicates that the referenced embodiment includes those features, but does not exclude the presence of other features unless they render the corresponding embodiment impractical. Conversely, "consisting of" indicates that the associated embodiment is free of other features beyond those following the preceding sentence, except for any other features that do not materially affect the essential characteristics of the corresponding embodiment. It goes without saying that the term "comprising" encompasses the meaning of the term "consisting of."

[0079] A system is described herein that includes an outer chamber and an inner chamber. The inner chamber is disposed within an outer space provided within the outer chamber. In other words, the inner chamber is within the outer chamber. The inner chamber further includes a substrate support for holding a substrate. Suitable substrate supports include a susceptor, a pedestal, a plate, a mesh, and the like. The inner chamber includes an upper chamber portion and a lower chamber portion. The upper chamber portion and the lower chamber portion are movable relative to each other between a closed position and an open position. The upper chamber portion and the lower chamber portion abut in the closed position. In some embodiments, the inner space and the outer space are not in fluid communication when the upper chamber portion and the lower chamber portion are in the closed position. The upper chamber portion and the lower chamber portion define an opening in the open position. When the upper chamber portion and the lower chamber portion are in the open position, the inner space and the outer space are in fluid communication through the opening. In other words, the inner space and the outer space are connected through the opening. In other words, the upper and / or lower chamber sections can be moved by, for example, a linear or rotary actuator, thereby forming or closing an opening between the upper and lower chamber sections. When the opening is opened, the internal volume of the inner chamber and the internal volume of the outer chamber are fluidly connected, thereby enabling the exchange of gas species between the internal volumes of the inner and outer chambers. This further enables control of various reaction conditions within the inner chamber. Specifically, it goes without saying that process parameters, such as gas flow distribution over a substrate disposed in the inner chamber and pump speed, and therefore the total pressure within the inner chamber, can be effectively controlled with a relatively small opening. With a relatively large opening, process parameters, such as substrate temperature, can be controlled. Controlling the size of the opening can also be a particularly effective method for controlling the total pressure within the inner reaction chamber, especially at very low pressures.Additionally, maintaining the upper and lower chamber portions in an open position during at least a portion of the deposition or etching process may advantageously result in low background contamination levels.

[0080] In some embodiments, the inner space and the outer space are fluidly connected by a bypass duct. Therefore, fluid communication between the inner space and the outer space can be maintained regardless of the relative positions of the upper and lower chambers. Therefore, the pressure in the inner space and the outer space can be maintained at a level approximately equal to the pressure in the outer space, while other reaction conditions in the inner space can be changed by the size of the opening between the upper and lower chambers.

[0081] In some embodiments, the system includes an opening control mechanism. The opening control mechanism can be configured to control the size of the opening between the lower chamber portion and the upper chamber portion. For example, the opening control mechanism can control the distance coordinate of a linear actuator operably coupled to at least one of the lower chamber portion and the upper chamber portion. Additionally or alternatively, the opening control mechanism can control the rotation coordinate of a rotary actuator, i.e., the rotation angle, operably coupled to at least one of the lower chamber portion and the upper chamber portion. Thus, the opening control mechanism can control the size of the opening to a predetermined value.

[0082] In some embodiments, the opening control mechanism is configured to control the size of the opening between the lower chamber portion and the upper chamber portion between two or more open positions. In some embodiments, the opening control mechanism is configured to control the size of the opening between the lower chamber portion and the upper chamber portion between three or more open positions. In some embodiments, the opening control mechanism is configured to control the size of the opening between the lower chamber portion and the upper chamber portion between four or more open positions. In some embodiments, the opening control mechanism is configured to control the size of the opening between the lower chamber portion and the upper chamber portion between five or more open positions. In some embodiments, the opening control mechanism is configured to control the size of the opening between the lower chamber portion and the upper chamber portion between ten or more open positions. In some embodiments, the opening control mechanism is configured to control the size of the opening between the lower chamber portion and the upper chamber portion between twenty or more open positions. In some embodiments, the opening control mechanism is configured to control the size of the opening between the lower chamber portion and the upper chamber portion between fifty or more open positions. In some embodiments, the opening control mechanism is configured to control the size of the opening between the lower chamber portion and the upper chamber portion between one hundred or more open positions. In some embodiments, the opening control mechanism is configured to control the size of the opening between the lower and upper chamber portions among a plurality of open positions, e.g., a range of open positions between a closed position and a maximum open position. In some embodiments, the size of the opening can be controlled in intervals, e.g., at least 1 μm to a maximum of 1 mm, or at least 2 μm to a maximum of 500 μm, or at least 5 μm to a maximum of 200 μm, or at least 10 μm to a maximum of 100 μm, or at least 30 μm to a maximum of 70 μm, e.g., in intervals of 50 μm.In some embodiments, the maximum open position is at least 1 mm to a maximum of 50 mm, or at least 1 mm to a maximum of 2 mm, or at least 2 mm to a maximum of 5 mm, or at least 5 mm to a maximum of 10 mm, or at least 10 mm to a maximum of 20 mm, or at least 20 mm to a maximum of 50 mm, e.g., 12.5 mm. In some embodiments, the maximum opening size is 30 mm. In some embodiments, the opening control mechanism comprises electronic circuitry including a processor and software for selectively operating actuators that control the size of the opening. The opening control mechanism can comprise control software that controls the size of the opening. The opening control mechanism can comprise software or hardware components, such as FPGA or ASIC modules, that perform several tasks. It goes without saying that if the controller comprises a software component for performing a specific task, the controller is programmed to perform that specific task. The module can advantageously be configured to reside on an addressable storage medium, i.e., memory, of the control system and can be configured, for example, to control a specific movement of at least one of the upper and lower chamber portions.

[0083] In some embodiments, the system includes a precursor injector and / or a reactant injector. When the system includes only one precursor injector or reactant injector, the injector can be used, for example, to supply precursors or reactants to the inner chamber. The precursors can then be used to form a layer on a substrate on a substrate support, for example, by techniques such as chemical vapor deposition (CVD) or plasma-enhanced chemical vapor deposition (PECVD). In some embodiments, the system includes another injector for injecting an inert gas, such as an inert gas injector, e.g., a dilution gas injector or a seal gas injector. Suitable inert gases include noble gases. In an exemplary embodiment, an inert gas injector can be provided to supply an inert gas to at least one of the inner chamber, the outer chamber, and the reactant source.

[0084] In some embodiments, the system includes a first precursor injector and a second precursor injector, wherein the first precursor injector and / or the second precursor injector are disposed within the inner chamber and supply precursors to the inner chamber.

[0085] In some embodiments, the system further comprises a showerhead injector, which can be suitably used to uniformly deliver precursors to a substrate disposed within the inner chamber.

[0086] In some embodiments, the showerhead injector is a dual-channel showerhead injector comprising a first set of channels and a second set of channels. The first set of channels can, for example, deliver a first precursor to the inner chamber, while the second set of channels delivers a second precursor to the reaction chamber. An exemplary dual-channel showerhead injector is described in U.S. Patent No. 7,601,223.

[0087] In some embodiments, the upper chamber portion has a conical shape. In some embodiments, the lower chamber portion has a conical shape. Such a conical shape can improve process uniformity in the inner chamber.

[0088] In some embodiments, the lower chamber section includes an exhaust connector in fluid communication with an exhaust system. The exhaust connector can be suitably in fluid communication with gas exhaust means, such as a pump, e.g., a turbo pump, and / or a cold trap, to facilitate removal of gases, such as reaction products, unreacted precursors, carrier gases, etc., from the inner chamber. Gas exhaust means may or may not be included in the systems described herein.

[0089] In some embodiments, the outer chamber is in fluid communication with an exhaust system. The outer chamber can include, for example, an exhaust connector in fluid communication with the exhaust system. The exhaust connector can be suitably in fluid communication with gas exhaust means, for example, a pump, such as a turbo pump, and / or a cold trap, to easily remove gases, such as reaction products, unreacted precursors, carrier gases, etc., from the inner chamber. Gas exhaust means may or may not be included in the systems described herein.

[0090] In some embodiments, the outer chamber is in fluid communication with an exhaust system, and the inner chamber is in fluid communication with the outer chamber through a bypass duct. Thus, gas species in the inner chamber can be removed from the inner chamber by the exhaust system of the outer chamber regardless of the relative positions of the lower and upper chamber sections. In some embodiments, the outer chamber is in fluid communication with an exhaust system, the inner chamber is in fluid communication with the outer chamber through a bypass duct, and the inner chamber is not in fluid communication with another exhaust system.

[0091] In some embodiments, the substrate support comprises a heater.

[0092] In some embodiments, the substrate support comprises a stabilizing mechanism for keeping the substrate support stationary when the upper and lower chamber portions move relative to one another.

[0093] The systems described herein may, in some embodiments, further comprise a load lock and / or wafer handling system, so that when wafers, e.g., semiconductor wafers, e.g., silicon wafers, are used as substrates, the substrates can be efficiently and automatically moved from the load station, i.e., the load lock, to the inner chamber as needed.

[0094] In some embodiments, the substrate support is coupled to the upper chamber portion. In such embodiments, the relative positions of the substrate support and the upper chamber portion can be effectively fixed.

[0095] In some embodiments, the system is configured to maintain the outer chamber at an outer chamber pressure and the inner chamber at an inner chamber pressure. In some embodiments, the inner chamber pressure and the outer chamber pressure are different. In some embodiments, the inner chamber pressure is lower than the outer chamber pressure. In some embodiments, the inner chamber pressure is higher than the outer chamber pressure. In some embodiments, an inner chamber pressure higher than the outer chamber pressure can be advantageously used during cyclic deposition processes, such as ALD processes, to periodically remove unreacted precursors and / or reaction by-products from the inner chamber, for example, during one or more purge steps.

[0096] In some embodiments, the system further comprises an inner chamber wall heater for heating at least one of the lower and upper chamber sections. Accordingly, in some embodiments, the system comprises a heater for heating the walls of the lower chamber section. Additionally or alternatively, the system can comprise a heater for heating the walls of the upper chamber section in some embodiments. In some embodiments, the system comprises a heater for heating the walls of the upper chamber section, and the system comprises a heater for heating the walls of the lower chamber section. Suitable heaters include resistance heaters, such as helically wound wire, e.g., helically wound metal wire, e.g., helically wound tungsten wire. Indeed, in some embodiments, a wire can be suitably wound around the lower and / or upper chamber sections and connected to an electrical source to heat the lower and / or upper chamber sections by resistance heating. For example, the lower chamber section and / or the upper chamber section can be heated, for example, to a temperature of at least 50° C. and up to 1000° C., or to a temperature of at least 100° C. and up to 800° C., or to a temperature of at least 400° C. and up to 700° C., for example, to a temperature of 600° C., for example, to a temperature of 500° C. As a result, the temperature of the walls of the inner chamber can be effectively controlled, and as a result, the sticking coefficient of the gases used in the inner chamber, for example, precursors or reactants, can also be controlled.

[0097] In some embodiments, the system further includes an outer chamber wall heater for heating the wall of the outer chamber. Accordingly, in some embodiments, the system includes a heater for heating the wall of the outer chamber. Suitable heaters include a resistance heater, such as a helically wound wire, e.g., a helically wound tungsten wire. Indeed, in some embodiments, the wire can be suitably wound around the wall of the outer chamber and connected to a power source to heat the outer chamber by resistance heating. For example, the wall of the outer chamber can be heated to a temperature of at least 50°C and up to 1000°C, or at least 100°C and up to 600°C, or at least 150°C and up to 400°C, e.g., up to 200°C. In some embodiments, the wall of the outer chamber can be heated to a temperature of at least 50°C and up to 250°C. As a result, the wall of the inner chamber can be effectively controlled, and the sticking coefficient of a gas, e.g., a precursor used in the inner chamber, can be controlled.

[0098] In some embodiments, to enable the system to be used for processes such as high-throughput atomic layer deposition (ALD) or cyclical ALD, where the individual unit steps are not necessarily self-limiting, it can be beneficial to heat at least one of the inner and outer chamber walls to reduce the sticking coefficient of the gas.

[0099] In some embodiments, the system further comprises a shell surrounding the outer chamber. The shell can, for example, comprise a heat-resistant material, such as steel.

[0100] In some embodiments, the outer chamber is insulated, for example, by double-wall insulation and / or by an aluminum oxide coating. Insulating the outer chamber can advantageously improve temperature control within the inner and / or outer chamber. Additionally or alternatively, insulating the outer chamber can reduce heat loss to the environment. In some embodiments, the exterior surface of the outer chamber can be cooled by a cooling jacket, for example, a cooling jacket containing water.

[0101] In some embodiments, the system includes one or more heated gas lines. In some embodiments, the heated gas lines are heated to a temperature lower than the temperature of the inner chamber. In some embodiments, the heated gas lines are heated to a temperature equal to or approximately equal to the temperature of the outer chamber. In some embodiments, the heated gas lines are heated to a temperature of at least 50°C and up to 1000°C, or to a temperature of at least 100°C and up to 600°C, or to a temperature of at least 150°C and up to 400°C, e.g., to a temperature of 200°C.

[0102] In some embodiments, the system further comprises a radio frequency power source and a ground, and the system is configured to generate a plasma between the showerhead injector and the substrate support.

[0103] In some embodiments, the system further includes an activated species source operably coupled to the inner chamber. Suitable activated species sources include radical sources, such as remote plasma sources or hot wire sources, and ultraviolet (UV) sources, such as vacuum ultraviolet sources. The activated species source may preferably include a gas connector that can be connected to an activated species precursor gas line to supply an activated species precursor gas. An exemplary activated species precursor includes H2. The activated species source can then interact with the activated species precursor gas to generate activated species that can be guided through the inner chamber, for example, by an activated species line. The activated species line may have a length of, for example, greater than 20 cm, greater than 50 cm, greater than 1 m, or greater than 2 m. Alternatively, the activated species source can be located within the inner chamber. Alternatively, the activated species source can be located adjacent to the reaction chamber. Of course, an activated species line is not necessarily required, for example, when the activated species source is located within or adjacent to the inner chamber.

[0104] In some embodiments, when a dual channel showerhead injector is used, one set of channels can be used to supply activated species, e.g., radicals, to the inner chamber, and another set of channels can pulse precursors that can react with the activated species, e.g., by surface reaction, onto a substrate disposed on a substrate support disposed in the inner chamber.

[0105] In some embodiments, the active species source is in fluid communication with the inner chamber, for example, by an active species connector. In some embodiments, the active species connector can be located in the upper chamber portion. Alternatively, the active species connector can be located in the lower chamber portion.

[0106] In some embodiments, the activated species source comprises a remote plasma source.

[0107] In some embodiments, the activated species source includes a radical source. The present system is, of course, highly suitable for use with a radical source. Specifically, by forming an opening between the lower and upper chamber sections, reaction by-products can be efficiently removed from the inner chamber, thereby reducing the pressure in the inner chamber and thus reducing parasitic recombination of radicals in the gas phase. Suitable radical sources include hot wire sources and plasmas, such as capacitively coupled plasmas or inductively coupled plasmas.

[0108] In some embodiments, the radical source is separated from the inner space by one or more diffusers. In some embodiments, two diffusers separate the radical source and the inner space. The diffusers can suitably block the line of sight between the radical source and the substrate support, thereby shielding the substrate support and any substrate disposed thereon from some types of energy radiation (e.g., infrared and / or ultraviolet radiation) and / or some types of energetic particles (e.g., ions) emitted from the radical source. Meanwhile, the radicals pass through the one or more diffusers. Suitable diffusers include perforated plates and wire mesh plates. Thus, in some embodiments, the radical source is separated from the inner space by one or more meshes. Furthermore, the one or more diffusers can shield the inner space from thermal energy radiated from the radical source; for example, the temperature of a hot wire source can be very high. Furthermore, the one or more diffusers can minimize back-diffusion from the inner chamber to the radical source. Furthermore, the one or more diffusers can facilitate the delivery of radicals to the wafer. Additionally, if the precursor is delivered to the system upstream of the at least one diffuser, the at least one diffuser can facilitate delivery of the precursor to the wafer in a uniform manner.

[0109] In some embodiments, the system further comprises an ellipsometer. The ellipsometer may be suitably positioned, for example, to measure the thickness of a layer deposited on a substrate disposed on a substrate support. Additionally or alternatively, the ellipsometer may be positioned, for example, to measure the temperature of a substrate disposed on a substrate support.

[0110] Further described herein are methods for controlling one or more reaction conditions within the inner chamber. The inner reaction chamber can be provided within the system described herein. The inner chamber is disposed within an outer space provided within the outer chamber and includes an inner space. The inner space includes a substrate support for supporting a substrate. The inner chamber further includes an upper chamber portion and a lower chamber portion. The upper chamber portion and the lower chamber portion define an opening. The inner space and the outer space are in fluid communication through the opening, i.e., the opening allows gas to flow between the inner space and the outer space. The method further includes maintaining the outer chamber at an outer chamber pressure. In some embodiments, the outer chamber pressure is lower than the inner chamber pressure maintained in the inner chamber. The method further includes moving the upper chamber portion relative to, i.e., with respect to, the lower chamber portion. Additionally or alternatively, the lower chamber portion can be moved relative to the upper portion. Moving the lower chamber portion relative to the upper chamber portion, or vice versa, can be performed by an opening control mechanism. Thus, the size of the opening between the lower chamber and the upper chamber can be controlled. By controlling the size of this opening, various process parameters of the inner chamber can be controlled. Exemplary process parameters that can be controlled include inner chamber temperature, inner chamber pressure, inner chamber pump speed, inner chamber gas flow rate, inner chamber process uniformity, and inner chamber residence time. When the outer chamber pressure is lower than the inner chamber pressure, controlling the size of the opening, for example, when used in conjunction with one or more gas removal devices, such as pumps or cold traps, can improve control of local pumping speed and local pressure within the inner chamber compared to simply removing gas from the inner chamber with one or more gas removal devices.

[0111] In some embodiments, the inner chamber is in fluid communication with the outer chamber through a bypass duct and through an opening between the upper and lower chambers. In such embodiments, the outer chamber is in fluid communication with an exhaust system, and the inner chamber may or may not be in fluid communication with another exhaust system. Thus, gas species within the inner chamber can be removed from the inner chamber by the exhaust system of the outer chamber regardless of the relative positions of the lower and upper chambers.

[0112] In some embodiments, the inner reaction chamber has a viscosity of at least 1.10 -11 mbar~maximum 1.10 -2 to a pressure of at least 1.10 mbar -10 mbar~maximum 1.10 -3 to a pressure of at least 1.10 mbar -9 mbar~maximum 1.10 -4 to a pressure of at least 1.10 mbar -8 mbar~maximum 1.10 -5 to a pressure of at least 1.10 mbar -7 mbar~maximum 1.10 -6 The inner reaction chamber is maintained at a pressure of 1000 mbar. In some embodiments, the pressure in the inner reaction chamber is controlled by controlling the size of an opening between the lower and upper chamber sections. In some embodiments, the pressure in the inner chamber is controlled by controlling the amount of inert gas, precursor, and / or reactant entering the inner chamber, for example, by one or more valves, e.g., throttle valves.

[0113] In some embodiments, the system includes a substrate disposed on a substrate support within an inner chamber, the inner chamber configured to maintain the substrate at a temperature of at least 25°C to a maximum of 600°C, or at least 50°C to a maximum of 500°C, or at least 100°C to a maximum of 400°C, or at least 200°C to a maximum of 300°C. Heating of the substrate can be performed, for example, by a substrate heater provided on the substrate support. Additionally or alternatively, the substrate can be heated, for example, to a temperature of at least 25°C to a maximum of 600°C, or at least 50°C to a maximum of 500°C, or at least 100°C to a maximum of 400°C, or at least 200°C to a maximum of 300°C, by a heater provided in the lower chamber section and / or the upper chamber section. Thus, the temperature of the inner chamber wall can be efficiently controlled, and thereby the sticking coefficients of various gases on the inner chamber wall can be controlled.

[0114] In some embodiments, the method includes heating the walls of the outer chamber, which can be useful, for example, to control the sticking coefficient of the gas on the walls of the outer chamber. For example, reactants such as NH or HO may tend to stick to cold walls in the reactor, thereby necessitating long pulse times when performing an ALD process in a reactor with unheated walls. On the other hand, heating the walls of the inner and / or outer chamber can reduce the sticking coefficient of such gas on the reactor walls, thereby enabling shorter pulse times and higher throughput. In some embodiments, the walls of the outer chamber can be heated to a temperature of at least 25°C and up to 600°C, or to a temperature of at least 50°C and up to 400°C, or to a temperature of at least 100°C and up to 300°C.

[0115] Referring now to the figures, Figure 1 illustrates an embodiment of a system (100) described herein. The system (100) comprises an outer chamber (200) surrounding an inner chamber (300). Optionally, the system comprises an active species source (400), which may be operably coupled to the inner chamber (300) by an active species line (420). The inner chamber (300) may be in a closed or open position. The system (100) may be used to perform the methods described herein and / or to form portions of the structures or devices described herein.

[0116] The inner chamber (300) can be used, for example, for chemical deposition or etching processes, such as atomic layer deposition (ALD), chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PEALD), radical-enhanced atomic layer deposition (REALD), atomic layer etching (ALET), etc. The system can include a vessel and one or more precursor or reactant sources, including precursors or reactants, alone or mixed with one or more carrier (e.g., inert) gases. The system (100) can include any suitable number of gas sources. The gas sources may be connected to the inner chamber, outer chamber, and / or activated species source by lines, each of which can include flow controllers, valves, heaters, etc. Suitable valves include throttle valves. The system can include an exhaust system including one or more gas removal devices, such as vacuum pumps.

[0117] The system (100) can include a controller comprising electronic circuitry and software for selectively operating the internal chamber openings, valves, manifolds, heaters, pumps, and other components included in the system (100). Such circuitry and components operate to introduce precursor, reactant, and / or purge gases from their respective sources. In some embodiments, the controller controls the timing of gas pulse sequences, the temperature of the substrate and / or reaction chamber, the pressure within the reaction chamber, and various other operations to ensure proper operation of the system (100).

[0118] The controller may include control software that electrically or pneumatically controls valves to control the flow of oxidizers, cleaning agents, plasma gases, and / or purge gases into and out of the reaction chamber. The controller may include software or hardware components, such as modules, e.g., FPGAs or ASICs, that perform specific tasks. The modules may be advantageously configured to reside on addressable storage media of the control system and configured to perform one or more processes.

[0119] Various configurations of the system are possible, with different numbers and types of precursor sources, plasma gas sources, and purge gas sources.

[0120] 2 shows an embodiment of the inner chamber (300) in a closed position, in which the upper chamber portion (310) and the lower chamber portion (320) of the inner chamber abut, thereby fluidly separating the inner space (330) within the inner chamber (300) from the outer space within the outer chamber.

[0121] 3 shows an embodiment of the inner chamber (300) in an open position. In the open position, the upper chamber portion (310) and the lower chamber portion (320) of the inner chamber are separated, thereby leaving an opening of a predetermined size between the upper chamber portion (310) and the lower chamber portion (320). The inner space (330) within the inner chamber is in fluid communication with the outer space within the outer chamber.

[0122] 4 illustrates an embodiment of a method for depositing a material on a substrate. The method includes placing a substrate on a substrate support (411) using a system described herein. The method then includes cyclically performing one or more cycles, e.g., a plurality of cycles, e.g., 2, 5, 10, 20, 50, 100, 200, 500, 1000, 2000, 5000, or more cycles (415). A cycle includes the following steps, in the following order: contacting the substrate with a first precursor (412), and contacting the substrate with a second precursor (413). As a result, a material, e.g., a layer, is deposited on the substrate, and the method ends (414).

[0123] In some embodiments, at least one of contacting the substrate with a first precursor (412) and contacting the substrate with a second precursor (413) includes generating a plasma in the inner chamber. In some embodiments, at least one of contacting the substrate with a first precursor (412) and contacting the substrate with a second precursor (413) includes providing a reactive species to the inner chamber. In some embodiments, at least one of contacting the substrate with a first precursor (412) and contacting the substrate with a second precursor (413) includes providing ultraviolet light to the inner chamber.

[0124] Optionally, the step of contacting the substrate with a first precursor and the step of contacting the substrate with a second precursor can be separated by an intra-cycle purge (416). Additionally or alternatively, in some embodiments, subsequent cycles can be separated by an inter-cycle purge (417).

[0125] In some embodiments, the upper and lower chamber portions are in a closed position during at least one of contacting the substrate with the first precursor and contacting the substrate with the second precursor. Additionally or alternatively, in some embodiments, the upper and lower chamber portions are in an open position during at least one of contacting the substrate with the first precursor and contacting the substrate with the second precursor. Thus, reaction conditions can be efficiently controlled during either one of the steps of contacting the substrate with the first and second precursors.

[0126] In some embodiments, the upper and lower chamber portions are in a closed position during at least one of the intra-cycle purge and the inter-cycle purge. Additionally or alternatively, and in some embodiments, the upper and lower chamber portions are in an open position during at least one of the intra-cycle purge and the inter-cycle purge.

[0127] Figure 5 illustrates another embodiment of a method for depositing a material on a substrate described herein. The method includes placing a substrate on a substrate support using a system described herein (511). The method further includes contacting the substrate with one or more precursors (512). Simultaneously, one or more reaction conditions in the inner chamber are controlled by the methods described herein. Thus, material can be deposited on the substrate. When a desired amount of material has been deposited on the substrate, e.g., in the form of a layer having a predetermined thickness, the flow of precursors can be stopped, i.e., the substrate is no longer in contact with the precursors, and the method ends (513).

[0128] In some embodiments, contacting the substrate with one or more precursors (512) includes generating a plasma in the inner chamber. In some embodiments, contacting the substrate with one or more precursors (512) includes providing reactive species to the inner chamber. In some embodiments, contacting the substrate with one or more precursors (512) includes providing ultraviolet light to the inner chamber. In some embodiments, contacting the substrate with one or more precursors (512) includes generating radicals, for example, by a hot wire source or by a remote plasma source.

[0129] FIG. 6 illustrates an embodiment of a method for etching a material. The method includes placing a substrate on a substrate support using a system described herein (611). Next, the method includes cyclically performing one or more cycles, e.g., a plurality of cycles, e.g., 2, 5, 10, 20, 50, 100, 200, 500, 1000, 2000, 5000, or more cycles (615). A cycle includes the following steps, in the following order: contacting the substrate with a first reactant (612) and contacting the substrate with a second reactant (613). In this manner, a material, e.g., a layer, is etched away from the substrate, and the method ends (614). Optionally, the steps of contacting the substrate with the first reactant and contacting the substrate with the second reactant can be separated by an intra-cycle purge (616). Additionally or alternatively, in some embodiments, subsequent cycles can be separated by an inter-cycle purge (617). In some embodiments, the first reactant includes a compound that reacts with the material to form a non-volatile compound, and the second reactant includes a compound that reacts with the non-volatile compound to form a volatile compound, such as in an atomic layer etching process. Atomic layer etching processes are known in the art. The method can, in particular, provide improved process control over known atomic layer etching methods.

[0130] In some embodiments, at least one of contacting the substrate with a first reactant (612) and contacting the substrate with a second reactant (613) includes generating a plasma in the inner chamber. In some embodiments, at least one of contacting the substrate with the first reactant (612) and contacting the substrate with a second reactant (613) includes providing reactive species to the inner chamber. The reactive species can include radicals. The radicals can be generated by a remote activated species source, such as a hot wire unit. In some embodiments, at least one of contacting the substrate with the first reactant (612) and contacting the substrate with the second reactant (613) includes providing ultraviolet light to the inner chamber.

[0131] In some embodiments, the upper and lower chamber portions are in a closed position during at least one of contacting the substrate with a first reactant and contacting the substrate with a second reactant. Additionally or alternatively, in some embodiments, the upper and lower chamber portions can be in an open position during at least one of contacting the substrate with a first reactant and contacting the substrate with a second reactant.

[0132] In some embodiments, the upper and lower chamber portions are in a closed position during at least one of the intra-cycle purge and the inter-cycle purge. Additionally or alternatively, and in some embodiments, the upper and lower chamber portions are in an open position during at least one of the intra-cycle purge and the inter-cycle purge.

[0133] Figure 7 illustrates another embodiment of a method for etching material on a substrate described herein. The method includes placing a substrate on a substrate support using a system described herein (711). The method further includes contacting the substrate with one or more reactants (712). Simultaneously, one or more reaction conditions in the inner chamber are controlled by the methods described herein. Thus, material can be etched from the substrate. When the desired amount of material has been etched, the flow of reactants can be stopped, i.e., the substrate is no longer in contact with the reactants, and the method ends (713).

[0134] In some embodiments, contacting the substrate with one or more reactants (712) includes generating a plasma in the inner chamber. In some embodiments, contacting the substrate with one or more reactants (712) includes providing reactive species to the inner chamber. In some embodiments, contacting the substrate with one or more reactants (712) includes providing ultraviolet light to the inner chamber. In some embodiments, contacting the substrate with one or more reactants (712) includes providing radicals, such as radicals generated by a radical source, such as a hot wire unit or a remote plasma unit, to the inner chamber.

[0135] FIG. 8 illustrates an embodiment of the system (100) described herein. The system (100) is similar to that of FIG. 1, except that it includes a bypass duct (860) that provides constant fluid communication between the outer chamber (200) and the inner chamber (300). The system (100) further includes an exhaust system (870) for removing various gas species, such as inert gases, reaction products, and unused reactants, from the outer chamber (200). The bypass duct (860) ensures that the outer chamber (200) and the inner chamber (300) are at substantially the same pressure, regardless of whether the upper and lower chamber sections are in the closed or open position. In the embodiment of FIG. 8, process parameters, such as gas flow distribution over a substrate and substrate temperature contained in the inner chamber, can be controlled by varying the size of the opening between the upper and lower chamber sections, while the bypass duct (860) ensures that the pressure in the inner and outer chambers is the same regardless of the size of the opening.

[0136] The exemplary embodiments of the present disclosure described herein are merely examples of embodiments of the present invention, as defined by the appended claims and their legal equivalents, and therefore do not limit the scope of the present invention. Any equivalent embodiments are intended to be within the scope of the present invention. Indeed, various modifications of the present disclosure in addition to those shown and described herein may become apparent to those skilled in the art from the description, including alternative useful combinations of the described elements. Such modifications and embodiments are also intended to fall within the scope of the appended claims.

[0137] Where conditions and / or structures are not specified in the present disclosure, those skilled in the art will be able to readily provide such conditions and / or structures in view of the present disclosure as a matter of routine experimentation. [Explanation of symbols]

[0138] 100 systems 200 outer chamber 300 inner chamber 310 Upper chamber 320 Lower chamber 330 Inner Space 340 Base material support 400 Active Species Source 420 Active Species Line 860 Bypass Duct 870 Exhaust system

Claims

1. 1. A system comprising an outer chamber and an inner chamber, - the inner chamber is arranged in an outer space provided in the outer chamber, - said internal chamber comprises an internal space comprising a substrate support, - the inner chamber comprises an upper chamber portion and a lower chamber portion; - the upper and lower chamber portions are movable relative to one another between a closed position and an open position; - said upper chamber part and said lower chamber part abut in said closed position; - the upper chamber portion and the lower chamber portion define an opening in the open position.

2. The system of claim 1 , wherein the inner space and the outer space are not in fluid communication in the closed position, and the inner space and the outer space are in fluid communication in the open position.

3. The system of claim 1 , wherein the inner space and the outer space are in fluid communication by a bypass duct.

4. 4. The system of claim 1, wherein the opening has a predetermined opening size, and wherein the system further comprises an opening control mechanism, the opening control mechanism configured to control the opening size.

5. The system of claim 4 , wherein the opening control mechanism comprises a linear actuator.

6. The system of claim 4 , wherein the opening control mechanism comprises a rotary actuator.

7. The system of any one of claims 1 to 3, further comprising an active species source operatively connected to the inner chamber.

8. The system of claim 7 , wherein the active species source is in fluid communication with the inner chamber by an active species connector provided in the upper chamber portion.

9. The system of claim 7 or 8, wherein the activated species source comprises a remote plasma source.

10. The system of claim 7 or 8, wherein the activated species source comprises a radical source.

11. The system of claim 10 , wherein the radical source is separated from the interior space by one or more diffusers.

12. The system of claim 11 , wherein the one or more diffusers are selected from a perforated plate and a wire mesh plate.

13. 13. The system of claim 12, wherein the radical source is separated from the inner space by two or more separators selected from a perforated plate and a wire mesh plate.

14. The system of any one of claims 1 to 13, further comprising a showerhead injector.

15. 15. The system of claim 14, wherein the system further comprises a radio frequency power source and a ground, the system configured to generate a plasma between the showerhead injector and the substrate support.

16. 16. The system of claim 14 or 15, wherein the showerhead injector is a dual channel showerhead injector comprising a first set of channels and a second set of channels.

17. 1. A method for controlling one or more reaction conditions in an inner chamber, the inner chamber being disposed within an outer space disposed within an outer chamber, the inner chamber comprising an inner space including a substrate support for supporting a substrate, the inner chamber further comprising an upper chamber portion and a lower chamber portion, the upper chamber portion and the lower chamber portion defining an opening having an opening size, the opening fluidly connecting the inner space and the outer space, the method comprising: - maintaining the outer chamber at an outer chamber pressure and the inner chamber at an inner chamber pressure; moving the upper chamber portion relative to the lower chamber portion or moving the lower chamber portion relative to the upper chamber portion with an opening control mechanism, thereby controlling the opening size and at least one process parameter selected from inner chamber temperature, inner chamber pressure, inner chamber exhaust rate, inner chamber gas flow rate, inner chamber process uniformity, and inner chamber residence time.

18. 1. A method for depositing a material onto a substrate, comprising: - providing a system according to any one of claims 1 to 16, - placing a substrate on said substrate support; - cyclically carrying out one or more cycles, the cycles comprising, in the following order: - contacting said substrate with a first precursor; - contacting the substrate with a second precursor; thereby depositing a material on said substrate.

19. 20. The method of claim 18, wherein the upper and lower chamber portions are in the closed position during at least one of contacting the substrate with the first precursor and contacting the substrate with the second precursor, and the upper and lower chamber portions are in the open position during at least one of contacting the substrate with the first precursor and contacting the substrate with the second precursor.

20. 20. The method of claim 18 or 19, wherein the upper and lower chamber portions are in the closed position during at least one of an intra-cycle purge and an inter-cycle purge.

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