Pattern-forming device, pattern-forming method, and storage medium

Abstract

This pattern-forming device comprises: a solvent treatment compartment which has a chamber for accommodating a substrate and a supply port for solvent vapor, and in which a pattern-forming treatment for forming a pattern on the substrate by treating the substrate with the solvent vapor having been supplied into the chamber is performed; a heat treatment compartment which has a chamber for accommodating the substrate having been treated in the solvent treatment compartment and a heater for heating the substrate, and in which, through heating with the heater, a drying treatment is performed to dry the substrate on which the pattern has been formed; a conveyance mechanism which conveys the substrate between the solvent treatment compartment and the heat treatment compartment; and a housing which accommodates the solvent treatment compartment, the heat treatment compartment, and the conveyance mechanism in a shared accommodation space.

Description

Pattern forming apparatus, pattern forming method, and storage medium

[0001] The present disclosure relates to a pattern forming apparatus, a pattern forming method, and a storage medium.

[0002] Patent Document 1 discloses a pattern formation method including the steps of forming a film of a block copolymer containing at least two polymers on a substrate, heating the film of the block copolymer in a solvent vapor atmosphere to phase-separate the block copolymer, and removing one of the polymers from the phase-separated film of the block copolymer.

[0003] JP 2013-249430 A

[0004] The technology according to the present disclosure improves the productivity of an apparatus that performs pattern formation processing in a solvent atmosphere.

[0005] One aspect of the present disclosure is a pattern forming apparatus comprising: a solvent treatment chamber having a chamber for accommodating a substrate and a supply port for solvent vapor, and performing a pattern formation process to form a pattern on the substrate by treating the substrate with the solvent vapor supplied into the chamber; a heat treatment chamber having a chamber for accommodating the substrate treated in the solvent treatment chamber and a heater for heating the substrate, and performing a drying process to dry the substrate on which the pattern has been formed by heating with the heater; a transport mechanism for transporting the substrate between the solvent treatment chamber and the heat treatment chamber; and a housing that accommodates the solvent treatment chamber, the heat treatment chamber, and the transport mechanism within a common storage space.

[0006] According to the present disclosure, it is possible to improve the productivity of an apparatus that performs a pattern formation process in a solvent atmosphere.

[0007] 1 is an explanatory diagram showing an outline of the internal configuration of a wafer processing system as a substrate processing system including a pattern formation apparatus according to a first embodiment; FIG. 2 is a diagram showing an outline of the internal configuration of the front side of the wafer processing system of FIG. 1; FIG. 3 is a diagram showing an outline of the internal configuration of the back side of the wafer processing system of FIG. 1; FIG. 4 is a longitudinal sectional view showing a schematic outline of the configuration of the pattern formation apparatus; FIG. 5 is a transverse sectional view showing a schematic outline of the configuration of the pattern formation apparatus; FIG. 6 is a longitudinal sectional view showing a schematic outline of the configuration of a solvent processing area of ​​the pattern formation apparatus; FIG. 7 is a longitudinal sectional view showing a schematic outline of the configuration of a drying area of ​​the pattern formation apparatus; FIG. 8 is a partially enlarged sectional view of a solvent processing chamber; FIG. 9 is a flowchart showing main steps of a series of processes by a wafer processing system; FIG. 10 is a flowchart showing main steps in a pattern formation process, a drying process, and a cooling process; FIG. 11 is an explanatory diagram showing the operation of the pattern formation apparatus; FIG. 12 is an explanatory diagram showing the operation of the pattern formation apparatus; FIG. 13 is an explanatory diagram showing another example of the configuration of the pattern formation apparatus;

[0008] Hereinafter, a pattern forming apparatus and a pattern forming method according to the present embodiment will be described in order with reference to the drawings. In this specification and the drawings, elements having substantially the same functional configurations are designated by the same reference numerals, and redundant description will be omitted.

[0009] (Wafer Processing System 1) Fig. 1 is an explanatory diagram showing an outline of the internal configuration of a wafer processing system 1 as a substrate processing system equipped with a pattern forming apparatus according to this embodiment. Figs. 2 and 3 are diagrams showing an outline of the internal configuration of the front side and rear side of the wafer processing system 1, respectively.

[0010] 1, the wafer processing system 1 includes a cassette station 10 into which cassettes C containing semiconductor wafers (hereinafter referred to as "wafers") W as substrates are transferred, and a processing station 11 equipped with a plurality of various processing devices that perform predetermined processing on the wafers W. The wafer processing system 1 has a configuration in which the cassette station 10 and the processing station 11 are integrally connected. The cassette C containing a plurality of wafers W is transferred into and out of the cassette station 10.

[0011] The cassette station 10 is provided with a cassette mounting table 20. The cassette mounting table 20 is provided with a plurality of mounting plates 21 on which the cassettes C are placed when the cassettes C are carried in and out of the wafer processing system 1.

[0012] The cassette station 10 is provided with a wafer transfer device 23 that is movable on a transfer path 22 that extends in the X direction in the figure. The wafer transfer device 23 is also movable in the vertical direction and around the vertical axis (the θ direction), and can transfer wafers W between the cassettes C on each mounting plate 21 and a transfer device in the third block G3 of the processing station 11, which will be described later.

[0013] The processing station 11 is provided with a plurality of blocks, for example, three blocks G1, G2, and G3, each equipped with various devices. For example, a first block G1 is provided on the front side of the processing station 11 (the negative X-direction side in FIG. 1 ), and a second block G2 is provided on the rear side of the processing station 11 (the positive X-direction side in FIG. 1 ). Furthermore, a third block G3 is provided on the cassette station 10 side of the processing station 11 (the negative Y-direction side in FIG. 1 ).

[0014] In the first block G1, as shown in FIG. 2, a plurality of liquid processing devices, for example, block copolymer coating devices 30 and selective removal devices 31, are arranged in two stages each in this order from the bottom up.

[0015] The block copolymer coating apparatus 30 coats the wafer W with a block copolymer to form a block copolymer film. The block copolymer coated by the block copolymer coating apparatus 30 is, for example, a polymer (copolymer) having a first polymer (polymer of the first monomer) and a second polymer (polymer of the second monomer) in which a first monomer and a second monomer are linearly polymerized. For example, polymethyl methacrylate (PMMA) is used as the first polymer, and for example, polystyrene (PS) is used as the second polymer. Hereinafter, a block copolymer of polystyrene (PS) and polymethyl methacrylate (PMMA) may be referred to as PS-b-PMMA.

[0016] Specifically, the block copolymer coating device 30 coats a block copolymer (e.g., PS-b-PMMA) in a solvent to form a solution. The solvent is not particularly limited as long as it is highly compatible with the components of the block copolymer. In the case of a PS-b-PMMA solution, for example, toluene, propylene glycol monomethyl ether acetate (PGMEA), or the like is used as the solvent.

[0017] The selective removal device 31 supplies a processing liquid onto the wafer W to selectively remove either the first polymer or the second polymer from the phase-separated block copolymer that has been applied to the wafer W. For example, when PS-b-PMMA is used as the block copolymer, the selective removal device 31 supplies an organic solvent (such as isopropyl alcohol (IPA)) as the processing liquid to selectively remove the PMMA polymer.

[0018] For example, three block copolymer coating devices 30 and three selective removal devices 31 are arranged horizontally in each stage. The number and arrangement of these block copolymer coating devices 30 and selective removal devices 31 can be selected arbitrarily.

[0019] In the block copolymer coating device 30 and the selective removal device 31, a predetermined processing liquid is applied onto the wafer W by, for example, a spin coating method. In the spin coating method, for example, the processing liquid is discharged onto the wafer W from a discharge nozzle, and the wafer W is rotated to spread the processing liquid over the surface of the wafer W.

[0020] As shown in FIG. 3, the second block G2 is provided with a heat treatment device 40, a pattern forming device 41, and an ultraviolet light irradiation device 42.

[0021] The heat treatment device 40 performs temperature control processing such as heating and cooling of the wafer W. The heat treatment device 40 may be omitted.

[0022] The pattern forming device 41 performs at least both a pattern forming process and a drying process on the wafer W.

[0023] The pattern formation process is a process of forming a pattern on the wafer W by treating the wafer W with solvent vapor. Specifically, the process involves adjusting the temperature of the wafer W to a predetermined temperature and exposing the wafer W to a solvent vapor atmosphere, thereby causing phase separation of a block copolymer film on the wafer W and forming a pattern. For example, when PS-b-PMMA is used as the block copolymer, the pattern formation process forms a pattern in which regions composed of PS polymer and regions composed of PMMA polymer are alternately arranged. To achieve this arrangement, a guide pattern may be formed on the surface of the wafer W before the pattern formation process. The drying process is a process of heating and drying the wafer W that has undergone the pattern formation process. This evaporates the solvent (the solvent in the block copolymer solution applied by the block copolymer application device 30 and the solvent vapor absorbed into the block copolymer film during the pattern formation process) from the block copolymer film that has been phase-separated by the pattern formation process. The temperature of the wafer W is higher during the drying process than during the pattern formation process.

[0024] The ultraviolet light irradiation device 42 irradiates ultraviolet light onto the wafer W, which has been subjected to the pattern formation process and the drying process and in which the copolymer has been phase-separated. The ultraviolet light irradiation is performed in an atmosphere of a rare gas such as argon (Ar) or helium (He), or an inert gas such as nitrogen gas.

[0025] For example, when PS-b-PMMA is used as the block copolymer, irradiation with ultraviolet light causes a crosslinking reaction in the PS polymer region, making the PS polymer region less soluble in organic solvents, whereas the main chain in the PMMA polymer region is cleaved, making the PMMA polymer region more soluble in organic solvents.

[0026] The heat treatment device 40, the pattern forming device 41, and the ultraviolet light irradiation device 42 are arranged in a vertical and horizontal direction, and the number and arrangement thereof can be selected arbitrarily.

[0027] For example, in the third block G3, a plurality of transfer devices 50, 51, 52, 53, 54, 55, and 56 are provided in this order from the bottom.

[0028] 1, the area surrounded by the first block G1 to the fourth block G4 forms a wafer transfer area D. In the wafer transfer area D, a wafer transfer device 70 is arranged.

[0029] The wafer transfer device 70 has a transfer arm 70a that is movable in, for example, the Y direction, the X direction, the θ direction, and the up-down direction. The wafer transfer device 70 moves within the wafer transfer region D and can transfer the wafer W to a predetermined device in the surrounding first block G1, second block G2, third block G3, and fourth block G4. For example, as shown in FIG. 3, a plurality of wafer transfer devices 70 are arranged one above the other, and can transfer the wafer W to a predetermined device at approximately the same height in each of the blocks G1 to G3.

[0030] 1, a wafer transfer device 80 is provided adjacent to the third block G3 on the positive side in the X direction. The wafer transfer device 80 has a transfer arm 80a that is movable in, for example, the X direction, the θ direction, and the up-and-down direction. The wafer transfer device 80 moves up and down while supporting a wafer W, and can transfer the wafer W to each delivery device in the third block G3.

[0031] The wafer processing system 1 described above is provided with at least one controller 200, as shown in FIG. 1 . The controller 200 processes computer-executable instructions that cause the wafer processing system 1 to perform the various processes described herein. The controller 200 may be configured to control each element of the wafer processing system 1 to perform the various processes described herein. In one embodiment, part or all of the controller 200 may be included in the wafer processing system 1. The controller 200 may include a processor, a storage unit, and a communication interface. The controller 200 is implemented, for example, by a computer. The processor may be configured to read from the storage unit a program that provides logic or routines that enable the various control operations to be performed, and to execute the read program to perform the various control operations. This program may be stored in the storage unit in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit and read from the storage unit by the processor for execution. The medium may be various computer-readable storage media or a communication line connected to the communication interface. The storage medium may be temporary or non-temporary. The processing unit may be a CPU (Central Processing Unit) or one or more circuits. The storage unit may include a RAM (Random Access Memory), a ROM (Read Only Memory), a HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface may communicate with the wafer processing system 1 via a communication line such as a LAN (Local Area Network).

[0032] <Pattern Forming Apparatus 41> Next, the pattern forming apparatus 41 will be described with reference to Figures 4 to 8. Figures 4 and 5 are a longitudinal cross-sectional view and a transverse cross-sectional view, respectively, that schematically show the configuration of the pattern forming apparatus 41. Figure 6 is a longitudinal cross-sectional view that schematically shows the configuration of a solvent treatment region R1, which will be described later. Figure 7 is a longitudinal cross-sectional view that schematically shows the configuration of a drying region R2, which will be described later. Figure 8 is a partially enlarged cross-sectional view of a solvent treatment chamber 301, which will be described later.

[0033] 4 and 5 has a housing 300 whose interior can be closed. A loading / unloading port (not shown) for the wafer W is formed on the side of the housing 300 on the wafer transfer region D side, and an opening / closing shutter (not shown) is provided at the loading / unloading port.

[0034] The housing 300 accommodates the solvent treatment chamber 301, the heat treatment chamber 302, and the transport mechanism 303 in a common accommodation space K1. The solvent treatment chamber 301 and the heat treatment chamber 302 are arranged side by side in the Y direction. Hereinafter, the area on the solvent treatment chamber 301 side, which is the area on the loading / unloading port side in the accommodation space K1, will be referred to as a solvent treatment region R1, and the area on the heat treatment chamber 302 side in the accommodation space K1 will be referred to as a drying region R2.

[0035] 6, the solvent processing chamber 301 has a chamber 320 that accommodates a wafer W. Specifically, the chamber 320 covers a processing space K11 above a temperature control plate 350 (described later) and accommodates the wafer W during pattern formation processing. The chamber 320 has an upper chamber 321 located on the upper side that can be raised and lowered, and a lower chamber 322 located on the lower side that is integrated with the upper chamber 321 and can seal the interior.

[0036] The upper chamber 321 has a generally cylindrical shape with an open bottom. A shower head 330 serving as a gas ejection unit that ejects gas containing solvent vapor is provided inside the upper chamber 321 at a position facing a temperature control plate 350 (described later). The shower head 330 specifically ejects gas containing solvent vapor toward a wafer W supported on the temperature control plate 350 (described later). The shower head 330 is configured to be able to move up and down in synchronization with the upper chamber 321.

[0037] A solvent vapor supply port 331 is formed on the underside of the shower head 330. A plurality of supply ports 331 are provided, and are arranged approximately uniformly on the underside of the shower head 330 in an area facing the wafer W on a temperature control plate 350 (described later). A gas supply pipe 332 is connected to the shower head 330. A pipe 334 connected to a solvent vapor supply mechanism 333 is connected to the gas supply pipe 332 via a three-way valve 335. In the solvent vapor supply mechanism 333, for example, a solvent stored in a solvent tank (not shown) flows out when the inside of the solvent tank is pressurized, and the flow rate is controlled by a flow rate controller (not shown) and the solvent is supplied to a vaporizer (not shown). The solvent is then vaporized in the vaporizer and supplied to the pipe 334 together with nitrogen gas supplied from a nitrogen gas supply source. The solvent concentration in the atmosphere in the solvent processing chamber 301 can be controlled by the flow rate of the nitrogen gas supplied to the vaporizer.

[0038] Furthermore, a pipe 337 connected to a supply mechanism 336 for a purge gas such as nitrogen gas is connected to the gas supply pipe 332 via a three-way valve 335. The supply mechanism 336 is provided with a group of supply devices (not shown) including, for example, a valve for controlling the flow of the purge gas and a flow rate control valve.

[0039] Furthermore, an outer periphery exhaust path 340 is provided inside the upper chamber 321 and on the outer periphery of the shower head 330 as an exhaust section for exhausting the processing space K11. An outer periphery exhaust pipe 341 provided on the top surface of the upper chamber 321 is connected to the outer periphery exhaust path 340. The outer periphery exhaust pipe 341 is connected to an ejector 342, which is an exhaust mechanism, and the ejector 342 is connected to a trap tank 343. The gas containing the solvent vapor exhausted by the ejector 342 has the solvent component removed in the trap tank 343 and is then discharged to the outside.

[0040] The lower chamber 322 has, for example, a generally cylindrical shape with an open top. The upper opening of the lower chamber 322 is provided with a temperature control plate 350 serving as a processing stage for supporting the wafer W during pattern formation processing, and an annular holding member 351 that houses the temperature control plate 350 and holds the outer periphery of the temperature control plate 350. The temperature control plate 350 has a thick, generally disk-like shape. The temperature control plate 350 incorporates, for example, a flow path for a refrigerant for temperature control and a temperature control mechanism (not shown) such as a Peltier element. The temperature of the temperature control plate 350 is controlled by the control unit 200 and adjusted to a predetermined temperature.

[0041] Below the temperature control plate 350 in the solvent treatment region R1, e.g., three lift pins 360 are provided to support and lift the wafer W from below. The lift pins 360 can be raised and lowered by a lift drive unit 361 having a drive source such as a motor. Near the center of the temperature control plate 350, three through holes 362 are formed that penetrate the temperature control plate 350 in the thickness direction. The lift pins 360 pass through the through holes 362 and can protrude from the upper surface of the temperature control plate 350. The lift pins 360 and the lift drive unit 361 may be omitted.

[0042] 7, the heat treatment chamber 302 has a chamber 420 that accommodates a wafer W. Specifically, the chamber 420 covers a processing space K12 on a heat plate 450 (described later) and accommodates the wafer W during drying processing. The chamber 420 has an upper chamber 421 located on the upper side that can be raised and lowered, and a lower chamber 422 located on the lower side that is integrated with the upper chamber 421 and can seal the interior.

[0043] The upper chamber 421 has a generally cylindrical shape with an open bottom. A shower head 430 that discharges an inert gas such as nitrogen gas is provided inside the upper chamber 421, facing a heat plate 450 (described later). The shower head 430 is configured to be able to move up and down in synchronization with the upper chamber 421.

[0044] An inert gas supply port 331 is formed on the lower surface of the shower head 430. A plurality of supply ports 431 are provided and are arranged approximately uniformly on the lower surface of the shower head 330 in an area facing a wafer W on a heat plate 450 (described later). A gas supply pipe 432 is connected to the shower head 430. A pipe 434 is connected to the gas supply pipe 432, which is connected to an inert gas supply mechanism 433. The supply mechanism 433 is provided with a group of supply devices (not shown) including, for example, valves and flow rate control valves for controlling the flow of the inert gas.

[0045] Furthermore, an outer periphery exhaust path 440 is provided inside the upper chamber 421 and on the outer periphery of the shower head 430 as an exhaust section for exhausting the processing space K12. An outer periphery exhaust pipe 441 provided on the top surface of the upper chamber 421 is connected to the outer periphery exhaust path 440. The outer periphery exhaust pipe 441 is connected to an ejector 442, which is an exhaust mechanism, and the ejector 442 is connected to a trap tank 443. The gas containing solvent vapor exhausted by the ejector 442 has the solvent component removed in the trap tank 443 and is then discharged to the outside.

[0046] The lower chamber 422 has, for example, a generally cylindrical shape with an open top. A hot plate 450 serving as a processing stage for supporting the wafer W during drying processing and an annular holding member 451 for accommodating the hot plate 450 and holding the outer periphery of the hot plate 450 are provided at the top opening of the lower chamber 422. The hot plate 450 has a thick, generally disk-like shape. A heater 452, for example, is built into the hot plate 450. The temperature of the hot plate 450 is controlled by the control unit 200 and adjusted to a predetermined temperature.

[0047] Below the hot plate 450 in the drying region R2, e.g., three lift pins 460 are provided to support and lift the wafer W from below. The lift pins 460 can be raised and lowered by a lift driver 461 having a drive source such as a motor. Near the center of the hot plate 450, e.g., three through holes 462 are formed that penetrate the hot plate 450 in the thickness direction. The lift pins 460 pass through the through holes 462 and can protrude from the upper surface of the hot plate 450. The lift pins 460 and the lift driver 461 may be omitted.

[0048] As shown in FIG. 5 , the transport mechanism 303 includes multiple support pieces 520 as substrate support members different from the temperature control plate 350 and the heat plate 450. For example, one support piece 520 is provided on the positive side of the X direction, which is perpendicular to the Y direction in a horizontal plane in which the solvent treatment chamber 301 and the heat treatment chamber 302 are aligned, and two support pieces 520 are provided on the negative side of the X direction. Each support piece 520 extends in the X direction and has a drive unit 521 equipped with a drive source such as a motor attached to its leg 522 (see FIG. 8 ). The drive unit 521 is attached to a rail 523 extending in the Y direction. The rail 523 extends from the solvent treatment region R1 to the drying region R2. Each support piece 520 can be moved along the rail 523 by the drive unit 521 between a first transfer position in the solvent treatment region R1 and a second transfer position in the drying region R2. Each support piece 520 can be raised and lowered by the drive unit 521. Specifically, each support piece 520 can be raised and lowered at the first transfer position and the second transfer position by the drive unit 521. At the first transfer position, the wafer W is transferred between the temperature control plate 350 of the solvent treatment chamber 301 and the support piece 520. This transfer is performed via the lift pins 360 or directly without using the lift pins 360. Similarly, at the first transfer position, the wafer W is transferred between the hot plate 450 of the heat treatment chamber 302 and the support piece 520. This transfer is performed via the lift pins 460 or directly without using the lift pins 460. The multiple support pieces 520 of the transfer mechanism 303 are configured to move in conjunction with each other.

[0049] 8, notches 322a, 351a, and 350a are provided in the lower chamber 322, the holding member 351, and the temperature control plate 350 at positions corresponding to the first transfer position of the support piece 520. This prevents interference between the support piece 520 and the lower chamber 322, the holding member 351, and the temperature control plate 350 when the support piece 520 is raised or lowered at the first transfer position. Similarly, as shown in FIG. 5, notches 422a, 451a, and 450a are provided in the lower chamber 422, the holding member 451, and the hot plate 450 at positions corresponding to the second transfer position of the support piece 520. This prevents interference between the support piece 520 and the lower chamber 422, the holding member 451, and the hot plate 450 when the support piece 520 is raised or lowered at the second transfer position.

[0050] <Processing by wafer processing system 1> Fig. 9 is a flowchart showing the main steps of a series of processes by the wafer processing system 1. Fig. 10 is a flowchart showing the main steps in the pattern forming process, drying process, and cooling process described below. Figs. 11 to 13 are explanatory diagrams showing the operation of the pattern forming device 41.

[0051] 9 , a block copolymer film is first formed on a wafer W (step S1). Specifically, for example, a cassette C containing a plurality of wafers W is loaded into the cassette station 10 of the wafer processing system 1. Then, the wafer transfer device 23 sequentially removes each wafer W from the cassette C on the mounting plate 21 and transfers them to, for example, the transfer device 53 in the third block G3 of the processing station 11. The wafer W is then transferred by the wafer transfer device 70 to the block copolymer coating device 30, where a coating solution of PS-b-PMMA as the block copolymer is applied by spin coating, forming a PS-b-PMMA film so as to cover the entire surface of the wafer W. In this PS-b-PMMA film, a PS polymer as the first polymer and a PMMA polymer as the second polymer are randomly mixed with each other.

[0052] Next, a pattern is formed on the wafer W (step S2), the wafer W is dried (step S3), and then the wafer W is cooled (step S4). That is, a pattern forming step, a drying step, and a cooling step are performed.

[0053] In the pattern formation process of step S2, for example, as shown in FIG. 10 , first, the wafer W is loaded from outside the housing 300 of the pattern forming apparatus 41 into the solvent treatment chamber 301 (step S11). Specifically, for example, as shown in FIG. 11A , the wafer W is moved above the temperature control plate 350 of the solvent treatment chamber 301 of the pattern forming apparatus 41 by the transfer arm 70a of the wafer transfer device 70. Next, the lift pins 360 are lifted, and the wafer W is transferred from the transfer arm 70a to the lift pins 360. Subsequently, the transfer arm 70a is retracted to outside the housing 300 of the pattern forming apparatus 41, and then the lift pins 360 are lowered, and the wafer W is placed on the temperature control plate 350 as shown in FIG. 11B . Furthermore, the upper chamber 321 is lowered, and a processing space K11 is defined by the upper chamber 321, the temperature control plate 350, and the like.

[0054] Next, the wafer W is subjected to a temperature stabilization process (step S12). Specifically, after the wafer W is placed on the temperature control plate 350 and the processing space K11 is defined, the processing space K11 is maintained for a predetermined time without, for example, supplying a gas containing solvent vapor or evacuating the processing space K11. The temperature of the temperature control plate 350 during the temperature stabilization process is substantially the same as the (set) temperature of the wafer W during the pattern formation process. The (set) temperature of the wafer W during the pattern formation process is not particularly limited, but is preferably 10 to 90°C, and more preferably 20 to 50°C. This temperature stabilization process stabilizes the temperature of the wafer W at substantially the same temperature as the temperature control plate 350.

[0055] Next, the wafer W is subjected to a solvent atmosphere treatment, i.e., a pattern formation treatment (step S13). Specifically, after the temperature stabilization treatment, for example, as shown in FIG. 11C, a gas containing solvent vapor is supplied from the shower head 330 to the processing space K11, and the processing space K11 is evacuated via the peripheral exhaust path 340, creating a solvent vapor atmosphere in the processing space K11. When the wafer W placed on the temperature control plate 350 after the temperature stabilization treatment is exposed to the solvent vapor atmosphere, phase separation occurs in the film of the PS-b-PMMA block copolymer. As a result, a pattern in which regions of the first polymer, PS, and regions of the second polymer, PMMA, are alternately arranged is formed on the wafer W. For example, the pattern formation treatment is completed after a predetermined time has elapsed since the supply of the gas containing solvent vapor. As described above, the temperature of the wafer W during the pattern formation treatment is not particularly limited, but is preferably 10 to 90°C, more preferably 25 to 40°C. The temperature of the temperature control plate 350 during the pattern formation process is the same as the temperature of the temperature control plate 350 during the temperature stabilization process, for example.

[0056] After the pattern formation process, a solvent atmosphere removal process is performed (step S14). Specifically, after the pattern formation process, for example, first, the supply of gas containing solvent vapor is stopped. Furthermore, as shown in FIG. 12A, while the exhaust of the processing space K11 via the peripheral exhaust path 340 continues, nitrogen gas, which is a purge gas, is supplied to the processing space K11 from the shower head 330. Thereafter, by maintaining this state for a predetermined time, the solvent vapor in the processing space K11 is removed via the peripheral exhaust path 340.

[0057] After the solvent atmosphere removal process, the wafer W is transferred from the solvent treatment chamber 301 to the heat treatment chamber 302 of the pattern forming apparatus 41 (step S15). Specifically, for example, the upper chamber 321 is raised to open the chamber 320. Furthermore, the plurality of support pieces 520 positioned at the first transfer position are raised, and the wafer W is transferred from the temperature control plate 350 to the plurality of support pieces 520. Next, the plurality of support pieces 520 are moved toward the heat treatment chamber 302, thereby transferring the wafer W from the solvent treatment chamber 301. Thereafter, the movement of the plurality of support pieces 520 continues, thereby transferring the wafer W into the heat treatment chamber 302. The plurality of support pieces 520 are moved to the second transfer position and then lowered, thereby placing the wafer W on the heat treatment chamber 302, as shown in FIG. 12B . Furthermore, the upper chamber 421 is lowered, and the processing space K12 is defined by the upper chamber 421 and the heating plate 450, etc.

[0058] Next, the wafer W is subjected to a drying process (step S16). Specifically, after the wafer W is placed on the hot plate 450 to define the processing space K12, for example, as shown in FIG. 12C, nitrogen gas, which is an inert gas, is supplied from the shower head 430 into the processing space K12, and the processing space K12 is evacuated via the peripheral exhaust path 440. In this state, the wafer W is heated by the hot plate 450, causing the solvent to evaporate from the PS-b-PMMA film, which is a phase-separated block copolymer, on the wafer W, and the film to dry. The temperature of the hot plate 450 during the drying process is approximately the same as the (set) temperature of the wafer W during the drying process. The (set) temperature of the wafer W during the drying process should be sufficient to evaporate the solvent, and is preferably 100 to 200°C, more preferably 180 to 200°C. For example, the drying process ends when a predetermined time has elapsed since the wafer W was placed on the hot plate 450, nitrogen gas was supplied, and the processing space K12 was evacuated.

[0059] After the drying process, the wafer W is transferred from the heat treatment chamber 302 of the pattern forming apparatus 41 to the solvent treatment chamber 301 (step S17). Specifically, for example, the upper chamber 421 is raised to open the chamber 420. Furthermore, the plurality of support pieces 520 positioned at the second transfer position are raised, and the wafer W is transferred from the heat plate 450 to the plurality of support pieces 520. Next, the plurality of support pieces 520 are moved toward the solvent treatment chamber 301, thereby transferring the wafer W from the heat treatment chamber 302. Thereafter, the movement of the plurality of support pieces 520 continues, thereby transferring the wafer W into the solvent treatment chamber 301. The plurality of support pieces 520 are moved to the first transfer position and then lowered, thereby placing the wafer W on the temperature control plate 350, as shown in FIG. 13A .

[0060] Next, the wafer W is subjected to a cooling process (step S18). Specifically, after the wafer W is placed on the temperature control plate 350, the upper chamber 321 is not lowered and the chamber 320 is maintained in an open state for a predetermined time. As a result, the wafer W after the drying process is cooled by the temperature control plate 350. During the cooling process, as shown in FIG. 13B , in the heat treatment chamber 302, the upper chamber 421 is lowered and the chamber 420 is closed. The temperature of the temperature control plate 350 during the cooling process may be different from that during the pattern formation process, specifically, may be lower than that during the pattern formation process. If the temperature of the temperature control plate 350 during the cooling process is different from that during the pattern formation process, the temperature of the temperature control plate 350 is changed, for example, during the drying process.

[0061] Then, the wafer W is unloaded from the solvent treatment chamber 301 of the pattern forming device 41 to the outside of the housing 300 (step S19). Specifically, after the cooling process, the wafer W is unloaded from the solvent treatment chamber 301 of the pattern forming device 41 to the outside of the housing 300, for example, in the reverse order of step S11. If the temperature of the temperature control plate 350 has been changed from that during the pattern formation process during the cooling process, the temperature of the temperature control plate 350 is returned to that during the pattern formation process before the next wafer W is loaded into the housing 300.

[0062] The pattern formation process of step S2 includes, for example, the processes from step S11 to step S15 where the wafer W is unloaded from the solvent treatment chamber 301. The drying process of step S3 includes, for example, the processes from step S15 onwards to step S17 where the wafer W is unloaded from the heat treatment chamber 302. The cooling process of step S4 includes, for example, the processes from step S17 onwards to step S19.

[0063] Returning to the description of FIG. 9 , after drying the wafer W in step S3, the wafer W is irradiated with ultraviolet light in an inert gas atmosphere (step S5). Specifically, for example, the wafer W is transferred to the ultraviolet light irradiation device 42 by the wafer transfer device 70, and the entire surface of the wafer W is irradiated with ultraviolet light in a nitrogen gas atmosphere, which is an inert gas atmosphere. This irradiates the entire surface of the wafer W with ultraviolet light, severing the PMMA bond chains and causing a crosslinking reaction in the PS. The ultraviolet light is not particularly limited as long as it has a wavelength component in the ultraviolet range, but preferably has a wavelength component of 200 nm or less. It is even more preferable that the ultraviolet light contains a wavelength component of 185 nm or less that can be absorbed by PMMA. When using ultraviolet light having a wavelength component of 200 nm or less, a Xe excimer lamp emitting ultraviolet light with a wavelength of 172 nm can be suitably used as the light source.

[0064] Then, either the first polymer or the second polymer is selectively removed from the block copolymer film on the wafer W, forming a pattern of the remaining polymer (step S6). Specifically, the wafer W is transported by the wafer transport device 70 to the selective removal device 31, where an organic solvent is supplied to the PS-b-PMMA film on the wafer W that has been irradiated with UV light. Examples of the organic solvent include IPA (isopropyl alcohol). IPA dissolves PMMA whose bond chains have been cleaved by UV light irradiation. Therefore, by supplying IPA as described above, the PMMA polymer regions in the PS-b-PMMA film dissolve, leaving the PS polymer regions on the surface of the wafer W. In other words, the PMMA is selectively removed. As a result, a pattern of PS polymer regions is obtained on the surface of the wafer W. The wafer W is then transported to the cassette C on the predetermined mounting plate 21, completing the series of processes performed by the wafer processing system 1.

[0065] In the pattern formation apparatus 41 configured as described above, the solvent treatment chamber 301 and the heat treatment chamber 302 are housed in a common accommodation space K1. Therefore, the pattern formation apparatus 41 can perform a pattern formation process using a solvent atmosphere, i.e., solvent vapor, in the solvent treatment chamber 301, while simultaneously performing a drying process in the heat treatment chamber 302. It is also possible to perform both the pattern formation process and the drying process in the solvent treatment chamber 301 without providing the heat treatment chamber 302. However, in this case, it is necessary to change the temperature of the temperature control plate 350 in the solvent treatment chamber 301, which is used for the drying process, after the pattern formation process and before the drying process. This change takes time. In particular, if the temperatures of the temperature control plate 350 suitable for the pattern formation process and the drying process differ significantly, changing the temperature of the temperature control plate 350 takes a long time. In contrast, in the pattern formation apparatus 41, the pattern formation process can be performed in a solvent atmosphere in the solvent treatment chamber 301, and the drying process can be performed in the heat treatment chamber 302 provided separately from the solvent treatment chamber 301. Therefore, it is not necessary to change the temperature of the hot plate 450 in the heat treatment chamber 302 used for the drying process after the pattern formation process and before the drying process. Therefore, in the pattern formation apparatus 41, the pattern formation process in a solvent atmosphere and the drying process can be performed consecutively. Therefore, according to the present disclosure, the productivity of an apparatus that performs a pattern formation process in a solvent atmosphere, specifically, the productivity of an apparatus that performs both the pattern formation process and the drying process, can be improved.

[0066] Furthermore, in the pattern formation apparatus 41, the accommodation space K1 accommodating the solvent treatment chamber 301 and the heat treatment chamber 302 accommodates the wafer W transport mechanism 303 dedicated to the pattern formation apparatus 41. Therefore, unlike when the solvent treatment chamber 301 and the heat treatment chamber 302 are accommodated in separate apparatuses and the wafer W is transported between these treatment chambers using a transport mechanism used in other apparatuses, there is no need to wait for the transport mechanism 303 to become available. Therefore, the pattern formation process using a solvent atmosphere and the drying process can be performed efficiently and continuously. From this perspective, too, the present disclosure can improve the productivity of an apparatus that performs both the pattern formation process and the drying process. Unlike the present disclosure, the pattern formation process and the drying process using a solvent atmosphere can also be performed in a heat treatment apparatus 40 that heats and cools the wafer W. However, compared to the case where separate heat treatment apparatuses 40 are assigned to the pattern formation process and the drying process using a solvent atmosphere, performing the pattern formation process and the drying process in a single pattern formation apparatus 41, as in the present disclosure, allows for a greater number of apparatuses to be installed in the wafer processing system 1 for the pattern formation process. Therefore, according to the present disclosure, throughput can be improved.

[0067] As described above, in the pattern formation device 41, if the temperature of the temperature control plate 350 during the cooling process is different from that during the pattern formation process, the temperature of the temperature control plate 350 is changed during the drying process. This eliminates the need to wait for the temperature of the temperature control plate 350 to reach the temperature during the cooling process after the drying process, or shortens the waiting time. Therefore, the pattern formation process using a solvent atmosphere, the drying process, and the cooling process can all be performed efficiently in this order.

[0068] In addition, by exposing the block copolymer film to a solvent vapor atmosphere during the pattern formation process, the solvent can be absorbed into the block copolymer film during the process. Therefore, even if the solvent remaining in the film evaporates during heating, the absorbed solvent prevents a decrease in the concentration of the polymer constituting the block copolymer in the film relative to the solvent. This maintains the fluidity of the polymer constituting the block copolymer, thereby promoting fluidization of the block copolymer and facilitating phase separation.

[0069] In the following description, other configuration examples of the pattern forming device 41 will be described.

[0070] 14 and 15, the pattern forming device 41 has a temperature control plate 350 having a substantially rectangular flat plate shape, and the end surface facing the hot plate 450 is curved in an arc shape. The temperature control plate 350 has two slits 371 formed along the Y direction.

[0071] The temperature control plate 350 is supported by a support arm 372. A drive unit 373 having a drive source such as a motor is attached to the support arm 372. The drive unit 373 is attached to a rail 374 extending in the Y direction. The rail 374 extends from the solvent treatment region R1 to the drying region R2. The drive unit 373 enables the temperature control plate 350 to move along the rail 374 between an initial position in the solvent treatment region R1 and a transfer position in the drying region R2. The temperature control plate 350, the support arm 372, the drive unit 373, and the rail 374 constitute a substrate transfer mechanism that transfers the wafer W between the solvent treatment chamber 301 and the heat treatment chamber 302, and the temperature control plate 350 constitutes a substrate support unit that supports the transferred wafer W.

[0072] Furthermore, the temperature control plate 350, at its initial position within the solvent treatment region R1, transfers the wafer W between it and the transfer arm 70a of the wafer transfer device 70 via the lift pins 360. Furthermore, a pattern formation process is performed on the wafer W placed on the temperature control plate 350 at the initial position. That is, the temperature control plate 350 constitutes a process stage that supports the wafer W during the pattern formation process. Therefore, the temperature control plate 350 serves both as the process stage and the substrate support portion.

[0073] Furthermore, the temperature control plate 350 transfers the wafer W between the temperature control plate 350 and the heating plate 450 via the lift pins 460 at a transfer position in the drying region R2.

[0074] The slit 371 is formed from the end surface of the temperature control plate 350 facing the hot plate 450 to near the center of the temperature control plate 350. The slit 371 can prevent the following: When a wafer W is transferred between the transfer arm 70a of the wafer transfer device 70 and the temperature control plate 350 via the lift pins 360, the lift pins 360 and the temperature control plate 350 can be prevented from interfering with each other. Furthermore, when a wafer W is transferred between the hot plate 450 and the temperature control plate 350 via the lift pins 460, the lift pins 460 and the temperature control plate 350 can be prevented from interfering with each other.

[0075] The temperature control plate 350 and the upper chamber 321 form a chamber for accommodating the wafer W.

[0076] 16, an upper chamber 421 of a heat treatment chamber 302 has a ceiling wall 421a that faces the heat plate 450 and covers the upper side of the processing space K12, and a side wall 421b that covers the sides of the processing space K12. The side wall 421b is configured to be able to move up and down. The side wall 421b moves down when a wafer W is loaded or unloaded into or from the heat treatment chamber 302, and moves up when the loading or unloading is completed. The processing space K12 is formed by the side wall 421b moving up.

[0077] A central exhaust path 470 is provided as an exhaust section for exhausting the processing space K11 at a position on the ceiling wall 421a opposite the center of the wafer W on the hot plate 450. A central exhaust pipe 471 is connected to the central exhaust path 470. Similar to the aforementioned peripheral exhaust pipe 441, the central exhaust pipe 471 is connected to an ejector (not shown) which is an exhaust mechanism, and the ejector is connected to a trap tank (not shown). The gas containing solvent vapor exhausted by the ejector has its solvent components removed in the trap tank and is then discharged to the outside.

[0078] In the pattern forming apparatus 41 having this configuration, the supply of an inert gas to the processing space K12 does not need to be performed during the drying process. Therefore, the shower head 430 may be omitted from the upper chamber 421.

[0079] The pattern forming apparatus 41 according to the present disclosure may process substrates other than semiconductor wafers, for example, FPD (flat panel display) substrates.

[0080] Although PS-b-PMMA has been exemplified above as a block copolymer, the block copolymer is not limited thereto. Examples of the block copolymer include polybutadiene-polydimethylsiloxane, polybutadiene-4-vinylpyridine, polybutadiene-methyl methacrylate, polybutadiene-poly-t-butyl methacrylate, polybutadiene-t-butyl acrylate, poly-t-butyl methacrylate-poly-4-vinylpyridine, polyethylene-polymethyl methacrylate, poly-t-butyl methacrylate-poly-2-vinylpyridine, polyethylene-poly-2-vinylpyridine, polyethylene-poly-4-vinylpyridine, polyisoprene-poly-2-vinylpyridine, polymethyl methacrylate-polystyrene, and poly-t-butyl methacrylate-poly-4-vinylpyridine. acrylate-polystyrene, polymethylacrylate-polystyrene, polybutadiene-polystyrene, polyisoprene-polystyrene, polystyrene-poly-2-vinylpyridine, polystyrene-poly-4-vinylpyridine, polystyrene-polydimethylsiloxane, polystyrene-poly-N,N-dimethylacrylamide, polybutadiene-sodium polyacrylate, polybutadiene-polyethylene oxide, poly-t-butyl methacrylate-polyethylene oxide, polystyrene-polyacrylic acid, polystyrene-polymethacrylic acid, polystyrene-polydimethylsiloxane (PS-b-PDMS), and the like may also be used.

[0081] In the above description, the pattern formation process is a process of forming a pattern on the wafer W by treating the wafer W with solvent vapor. However, the pattern formation process may be a process of forming a pattern on the wafer W by treating the wafer W with acetic acid vapor. Specifically, the pattern formation process may be a process of forming a pattern on the wafer W by treating the wafer W with acetic acid vapor to selectively remove either an unexposed portion or an exposed portion of a resist film such as a metal-containing resist film on the wafer W.

[0082] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive. The above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims. For example, the components of the above-described embodiments may be arbitrarily combined. Such an arbitrary combination naturally provides the functions and effects of each of the components involved in the combination, and also provides other functions and effects that are apparent to those skilled in the art from the description of this specification.

[0083] Furthermore, the effects described herein are merely descriptive or exemplary and are not limiting. In other words, the technology according to the present disclosure may achieve other effects that are apparent to those skilled in the art from the description of this specification, in addition to or in place of the above-described effects.

[0084] The following configuration examples also fall within the technical scope of the present disclosure: (1) A pattern formation apparatus comprising: a solvent treatment chamber having a chamber for accommodating a substrate and a solvent vapor supply port, and performing a pattern formation process to form a pattern on the substrate by treating the substrate with the solvent vapor supplied into the chamber; a heat treatment chamber having a chamber for accommodating the substrate treated in the solvent treatment chamber and a heater for heating the substrate, and performing a drying process to dry the substrate on which the pattern has been formed by heating with the heater; a transport mechanism for transporting the substrate between the solvent treatment chamber and the heat treatment chamber; and a housing that accommodates the solvent treatment chamber, the heat treatment chamber, and the transport mechanism within a common accommodation space. (2) The pattern formation apparatus according to (1), wherein the transport mechanism has a substrate support part for supporting the substrate, and the solvent treatment chamber has a processing stage, separate from the substrate support part, that supports the substrate during the pattern formation process. (3) The pattern formation apparatus according to (1), wherein the transport mechanism has a substrate support part that supports the substrate, and the substrate support part also serves as a processing stage that supports the substrate during the pattern formation processing in the solvent processing chamber. (4) The pattern formation apparatus according to claim 2 or 3, wherein the processing stage is configured to be able to adjust the temperature of the substrate. (5) The pattern formation apparatus according to any one of (1) to (4), wherein the temperature of the substrate is higher during the drying processing than during the pattern formation processing. (6) The pattern formation apparatus according to (5), wherein the temperature of the substrate during the processing with the solvent vapor is 100°C to 200°C, and the temperature of the substrate during the drying processing is 10 to 90°C. (7) The pattern forming apparatus is configured to perform a cooling process in the solvent treatment chamber on the substrate that has been subjected to the pattern formation process in the solvent treatment chamber and the drying process in the heat treatment chamber in that order, the solvent treatment chamber having a temperature-controllable treatment stage that supports the substrate during the pattern formation process and the cooling process, and the pattern forming apparatus described in (1) to (6) above, wherein during the drying process in the heat treatment chamber, the temperature of the treatment stage in the solvent treatment chamber is changed from the temperature during the pattern formation process to the temperature during the cooling process.(8) The pattern forming apparatus according to any one of (1) to (7), wherein the solvent treatment chamber treats the substrate, on which a film of a block copolymer containing at least two polymers has been formed, with the solvent vapor. (9) A pattern forming method comprising the steps of: forming a pattern on the substrate by treating the substrate in the solvent treatment chamber with solvent vapor; then transporting the substrate to a heat treatment chamber housed in a common storage space with the solvent treatment chamber by a transport mechanism housed in the common storage space; and then heating the substrate in the heat treatment chamber to dry the substrate. (10) A readable computer storage medium storing a program running on a computer of a control unit that controls a pattern formation device to execute a pattern formation method using the pattern formation device, the pattern formation method including: forming a pattern on a substrate by treating the substrate in a solvent treatment chamber with solvent vapor; then transporting the substrate to a heat treatment chamber housed in a common storage space with the solvent treatment chamber by a transport mechanism housed in the common storage space; and then drying the substrate by heating the substrate in the heat treatment chamber.

[0085] 41 Pattern forming apparatus 300 Housing 301 Solvent treatment chamber 302 Heat treatment chamber 303 Transfer mechanism 320 Chamber 331 Supply port 420 Chamber 452 Heater K1 Storage space W Wafer

Claims

1. A pattern forming device comprising: a solvent treatment chamber having a chamber for accommodating a substrate and a supply port for solvent vapor, and performing a pattern formation process to form a pattern on the substrate by treating the substrate with the solvent vapor supplied into the chamber; a heat treatment chamber having a chamber for accommodating the substrate treated in the solvent treatment chamber and a heater for heating the substrate, and performing a drying process to dry the substrate on which the pattern has been formed by heating with the heater; a transport mechanism for transporting the substrate between the solvent treatment chamber and the heat treatment chamber; and a housing that accommodates the solvent treatment chamber, the heat treatment chamber, and the transport mechanism within a common storage space.

2. The pattern forming apparatus according to claim 1, wherein the transport mechanism has a substrate support part for supporting the substrate, and the solvent processing chamber has a processing stage separate from the substrate support part for supporting the substrate during the pattern forming processing.

3. The pattern forming apparatus according to claim 1, wherein the transport mechanism has a substrate support section that supports the substrate, and the substrate support section also serves as a processing stage that supports the substrate during the pattern forming processing in the solvent processing chamber.

4. The pattern forming apparatus according to claim 2 or 3, wherein the processing stage is configured to be able to adjust the temperature of the substrate.

5. The pattern formation device according to any one of claims 1 to 3, wherein the temperature of the substrate is higher during the drying process than during the pattern formation process.

6. The pattern forming apparatus according to claim 5, wherein the temperature of the substrate during the treatment with the solvent vapor is 100°C to 200°C, and the temperature of the substrate during the drying treatment is 10 to 90°C.

7. The pattern formation device according to any one of claims 1 to 3, wherein the substrate is subjected to the pattern formation process in the solvent treatment chamber and the drying process in the heat treatment chamber in that order, and then the cooling process is performed in the solvent treatment chamber, the solvent treatment chamber having a temperature-controllable treatment stage that supports the substrate during the pattern formation process and the cooling process, and the temperature of the treatment stage in the solvent treatment chamber is changed from the temperature during the pattern formation process to the temperature during the cooling process during the drying process in the heat treatment chamber.

8. A pattern forming apparatus according to any one of claims 1 to 3, wherein the solvent treatment chamber treats the substrate, on which a film of a block copolymer containing at least two polymers has been formed, with the solvent vapor.

9. A pattern formation method comprising the steps of: forming a pattern on a substrate by treating the substrate in a solvent treatment chamber with solvent vapor; then transporting the substrate to a heat treatment chamber housed in a common storage space with the solvent treatment chamber by a transport mechanism housed in the common storage space; and then drying the substrate by heating the substrate in the heat treatment chamber.

10. A readable computer storage medium storing a program that runs on a computer of a control unit that controls a pattern formation device to execute a pattern formation method using the pattern formation device, the pattern formation method including the steps of: forming a pattern on a substrate by treating the substrate in a solvent treatment chamber with solvent vapor; then transporting the substrate to a heat treatment chamber housed in a common storage space with the solvent treatment chamber by a transport mechanism housed in the common storage space; and then drying the substrate by heating the substrate in the heat treatment chamber.

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