Particle control method and substrate processing method for substrate processing apparatus

Abstract

A substrate processing method according to an aspect of the present disclosure uses a substrate processing apparatus including a process chamber, a substrate support portion, a gas spray portion and an RF power supply, and comprises: a step of seating a substrate on the substrate support portion in the process chamber, and chucking the substrate on the substrate support portion by applying an electrostatic voltage to an electrostatic electrode; a step of supplying process gas to a reaction space so as to form a thin film on the substrate chucked on the substrate support portion; a step of dechucking the substrate from the substrate support portion and unloading the substrate from the process chamber; and a particle control step of reducing particles in the process chamber by alternately applying control voltages of different polarities to the electrostatic electrode at least once in a state in which the substrate is unloaded from the process chamber.

Description

Particle control method of a substrate processing device and substrate processing method

[0001] The present invention relates to semiconductor manufacturing, and more specifically, to a particle control method and a substrate processing method of a substrate processing apparatus.

[0002] To manufacture semiconductor devices, various substrate processing processes are performed in a substrate processing apparatus under a vacuum atmosphere. For example, processes such as loading a substrate into a process chamber and depositing a thin film on the substrate may be carried out. The substrate is placed on a substrate support installed inside the process chamber and can be chucked to the substrate support using electrostatic force.

[0003] Recently, as thin films formed on substrates become thicker or the height of heterogeneous alternating stacked thin films increases, a problem of increased particle accumulation has arisen within the process chamber and on the thin films on the substrates. Furthermore, this particle issue is becoming a more serious problem as the number of thin film deposition cycles increases.

[0004] The present invention aims to solve various problems, including those mentioned above, by providing a particle control method and a substrate processing method for a substrate processing apparatus that can improve process stability by reducing or removing particles within a process chamber. However, these problems are exemplary and do not limit the scope of the present invention.

[0005] A substrate processing method according to one aspect of the present invention for solving the above problem comprises a substrate processing apparatus including a process chamber having a reaction space formed therein, a substrate support member coupled to the process chamber for supporting the substrate and including an electrostatic electrode inside, a gas injection unit installed in the process chamber to supply process gas to the reaction space, and an RF power supply unit for forming a plasma atmosphere inside the process chamber, the method comprising the steps of: placing a substrate on the substrate support member inside the process chamber and applying an electrostatic voltage to the electrostatic electrode to chuck the substrate on the substrate support member; supplying process gas to the reaction space to form a thin film on the substrate chucked on the substrate support member; dechucking the substrate from the substrate support member and removing the substrate from the process chamber; and, while the substrate is removed from the process chamber, applying a control voltage of different polarities to the electrostatic electrode alternately at least once to reduce particles inside the process chamber.

[0006] In the above-described substrate processing method, the particle control step is performed by repeating a cycle at least once, wherein the cycle may include the step of forming a plasma atmosphere in the process chamber, the step of applying a first control voltage of a first polarity to the electrostatic electrode while the plasma atmosphere is formed in the process chamber, and the step of applying a second control voltage of a second polarity opposite to the first polarity to the electrostatic electrode while the plasma atmosphere is formed in the process chamber.

[0007] In the above substrate processing method, the cycle may include the step of discharging particles in the process chamber after the step of applying the second control voltage.

[0008] In the above substrate processing method, the discharge step can be performed by supplying purge gas into the reaction space while the plasma atmosphere in the process chamber is turned off.

[0009] In the above substrate processing method, the discharge step can be performed while applying the first control voltage or the second control voltage to the electrostatic electrode.

[0010] In the above substrate processing method, the first control voltage may be a negative voltage, and the second control voltage may be a positive voltage.

[0011] In the above substrate processing method, the absolute values ​​of the first control voltage and the second control voltage may be greater than the absolute value of the electrostatic voltage.

[0012] In the above substrate processing method, the step of chucking the substrate, the step of forming the thin film, the step of removing the substrate, and the step of controlling the particles can be performed sequentially and repeatedly multiple times.

[0013] A particle control method for a substrate processing apparatus according to another aspect of the present invention comprises a process chamber having a reaction space formed therein, a substrate support member coupled to the process chamber for supporting a substrate and including an electrostatic electrode inside, a gas injection member installed in the process chamber to supply process gas to the reaction space, and an RF power supply member for forming a plasma atmosphere inside the process chamber, wherein the particle control step may include reducing particles inside the process chamber by applying a control voltage of different polarities to the electrostatic electrode alternately at least once while the substrate is not seated on the substrate support member inside the process chamber.

[0014] In the particle control method of the above-described substrate processing device, the absolute values ​​of the first control voltage and the second control voltage may be greater than the absolute value of the electrostatic voltage applied to the electrostatic electrode to chuck the substrate on the substrate support.

[0015] According to the particle control method and substrate processing method according to some embodiments of the present invention as described above, process stability can be improved by reducing or removing particles in the process chamber through a particle control step in which voltages of different polarities are alternately applied to electrostatic electrodes when the substrate in the process chamber is removed after thin film deposition. Of course, the scope of the present invention is not limited by this effect.

[0016] FIG. 1 is a schematic cross-sectional view showing a substrate processing apparatus according to one embodiment of the present invention.

[0017] FIG. 2 is a flowchart showing a substrate processing method according to one embodiment of the present invention.

[0018] Figure 3 is a flowchart showing the particle control step in the substrate processing method of Figure 2.

[0019] FIG. 4 is a timing chart showing changes in electrostatic voltage and RF voltage step by step in a substrate processing method according to one embodiment of the present invention.

[0020] FIG. 5 is a timing chart showing changes in electrostatic voltage and RF voltage step by step in a substrate processing method according to another embodiment of the present invention.

[0021] FIG. 6 is a timing chart showing changes in electrostatic voltage and RF voltage step by step in a substrate processing method according to another embodiment of the present invention.

[0022] FIG. 7 is a schematic diagram of a substrate processing apparatus showing changes in particles at each step in a substrate processing method according to embodiments of the present invention.

[0023] FIG. 8 is a graph showing the number of particles on a substrate after processing according to the substrate processing method according to comparative examples and embodiments.

[0024] Hereinafter, several preferred embodiments of the present invention will be described in detail with reference to the attached drawings.

[0025] The embodiments of the present invention are provided to more fully explain the invention to those skilled in the art, and the following embodiments may be modified in various different forms, and the scope of the invention is not limited to the following embodiments. Rather, these embodiments are provided to make the disclosure more faithful and complete and to fully convey the spirit of the invention to those skilled in the art. In addition, the thickness or size of each layer in the drawings is exaggerated for convenience and clarity of explanation.

[0026] FIG. 1 is a schematic diagram showing a substrate processing device (100) according to one embodiment of the present invention, and FIG. 2 is a schematic partial cross-sectional view of a substrate support portion of the substrate processing device (100) of FIG. 1.

[0027] Referring to FIG. 1, the substrate processing device (100) may include a process chamber (110), a gas injection unit (120), and a substrate support unit (130).

[0028] More specifically, a reaction space (112) in which a substrate (S) can be processed may be formed in the process chamber (110). The process chamber (110) may be connected to a vacuum pump (not shown) through an exhaust pipe (114) to create a vacuum atmosphere. A throttle valve (117) for controlling the opening rate may be installed in the exhaust pipe (114). The throttle valve (117) may be used to control the pressure in the reaction space (112) within the process chamber (110).

[0029] Furthermore, the process chamber (110) may be equipped with an entrance / exit for loading a substrate (S) into or from the reaction space (112) and a gate structure (not shown) for opening and closing the same. The process chamber (110) may be provided in various shapes and, for example, may include a body portion (1102) and a top lead (1104). For example, the body portion (1102) may define the reaction space (112) and have an opening formed at its top, and the top lead (1104) may be coupled to the body portion (1102) to cover the opening of the body portion (1102).

[0030] A gas injection unit (120) may be installed in a process chamber (110) to supply process gas to a reaction space (112). More specifically, the gas injection unit (120) may be installed in the process chamber (110) so as to face a substrate support (130). For example, the gas injection unit (120) may be installed at the top of the process chamber (110) to inject process gas onto a substrate (S) placed on the substrate support (130).

[0031] In some embodiments, the gas injection unit (120) may include an inlet (122) into which process gas is introduced through a gas pipe (126), and a distribution plate (124) for injecting the process gas introduced through the inlet (122) and dispersed internally into a reaction space (112). Optionally, the gas injection unit (120) may further include a blocker plate internally for dispersing the process gas that has passed through the inlet (122).

[0032] In some embodiments, the gas injection unit (120) may have various forms, such as a shower head or a nozzle. If the gas injection unit (120) is in the form of a shower head, the gas injection unit (120) may be coupled to the process chamber (110) in a manner that partially covers the upper part of the process chamber (110). For example, the gas injection unit (120) may be coupled to the top lid (1104) of the process chamber (110).

[0033] A substrate support member (130) may be coupled to a process chamber (110) to support a substrate (S). For example, the substrate support member (130) may be installed in the process chamber (110) opposite to a gas injection member (120). The substrate support member (130) may include a top plate (132) on which the substrate (S) is placed and a shaft (135) for supporting it.

[0034] Optionally, the substrate support (130) may include a heater (182) for heating the substrate (S) inside the top plate. For example, the heater (182) may include one or more heating wires. A heater power supply (180) for applying power may be connected to the heater (182). Optionally, an AC filter (185) may be connected between the heater power supply (180) and the heater (182).

[0035] The shape of the top plate (132) in the substrate support (130) generally corresponds to the shape of the substrate (S), but is not limited thereto and can be provided in various shapes larger than the substrate (S) so as to stably seat the substrate (S). The shaft (135) may be connected to an external motor (not shown) to enable vertical movement, and optionally, a bellows tube (not shown) may be connected to maintain airtightness. Since the substrate support (130) is configured to seat the substrate (S) thereon, it may also be called a substrate seating part, a susceptor, etc.

[0036] Furthermore, the substrate support (130) may include an electrostatic electrode (158) inside. The electrostatic electrode (158) may receive electrostatic power, such as DC power, from an electrostatic power supply unit (150). When electrostatic power is applied to the electrostatic electrode (158), an electrostatic force is generated between it and the substrate (S), so that the substrate (S) can be fixed to the top plate (132) of the substrate support (130). In this case, the substrate support (130) may be called an electrostatic chuck in that the substrate (S) is chucked by the electrostatic force.

[0037] For example, the constant power supply unit (150) may include a DC power source (152) and a DC filter (155). For example, the DC power source (152) may be electrically connected to the electrostatic electrode (158) to supply a constant voltage to the electrostatic electrode (158). The DC filter (155) may be connected in series to the DC power source (152) to block RF current from flowing into the DC power source (152) through the electrostatic electrode (158). The DC filter (155) may be configured in various forms to block RF current while allowing DC current to pass through.

[0038] In some embodiments, the DC power supply (152) may provide a voltage of positive polarity and a voltage of negative polarity, respectively, or provide the positive polarity voltage and the negative polarity voltage alternately.

[0039] In some embodiments, the substrate processing device (100) may include an RF power supply (140). The RF power supply (140) may be connected to the process chamber (110) to supply RF (radio frequency) power to form a plasma atmosphere in the reaction space (112) inside the process chamber (110). For example, the RF power supply (140) may be connected to a gas injection unit (120), in which case the gas injection unit (120) may be referred to as a power supply electrode or an upper electrode. For example, the RF power supply (140) may include a high frequency (HF) power and / or a low frequency (LF) power.

[0040] Additionally, an impedance matching unit (146) may be positioned between the RF power supply unit (140) and the gas injection unit (120) for impedance matching. The impedance matching unit (146) may perform impedance matching between the RF power supply unit (140) and the process chamber (110). The impedance matching unit (146) may be composed of two or more series or parallel combinations selected from the group of resistors, inductors, and capacitors. For example, the impedance matching unit (146) may include at least one variable capacitor.

[0041] The above-described substrate processing device (100) can be used as a chemical vapor deposition (CVD) device or a plasma enhanced chemical vapor deposition (PECVD) device for depositing a thin film on a substrate (S).

[0042] Hereinafter, a substrate processing method according to embodiments of the present invention is described with reference to a substrate processing device (100). For convenience of explanation, the substrate processing method below is described with reference to a substrate processing device (100), but its scope is not limited to such a substrate processing device (100).

[0043] FIG. 2 is a flowchart showing a substrate processing method according to one embodiment of the present invention.

[0044] Referring to FIGS. 1 and 2, the substrate processing method may include a step (S10) of placing a substrate (S) on a substrate support (130) inside a process chamber (110) and chucking the substrate (S) on the substrate support (130); a step (S20) of forming a thin film on the substrate (S) chucked on the substrate support (130); a step (S30) of de-chucking the substrate (S) from the substrate support (130) and removing the substrate (S) from the process chamber (110); and a particle control step (S40) of applying a control voltage of different polarities to an electrostatic electrode (158) alternately at least once to reduce particles inside the process chamber (110).

[0045] More specifically, in the step (S10) of chucking the substrate (S), the substrate (S) can be loaded from outside the process chamber (110) into the process chamber (110) and placed on the substrate support (130), and the substrate (S) can be chucked on the substrate support (130) by applying an electrostatic voltage to the electrostatic electrode (158). For example, an electrostatic voltage, such as a DC voltage, can be supplied to the electrostatic electrode (158) from the electrostatic power supply unit (150) to use electrostatic power to chuck the substrate (S) on the substrate support (130).

[0046] In the step of forming a thin film (S20), a process gas can be supplied to the reaction space (112) to form a thin film on the substrate (S) chucked on the substrate support (130). For example, process gases can be injected onto the substrate (S) within the reaction space (112) through the gas injection unit (120). Optionally, in the thin film formation step (S20), a plasma atmosphere can be formed in the reaction space (112) to activate the process gases and promote thin film deposition. For example, RF power can be supplied from the RF power supply unit (140) to the gas injection unit (120) to form a plasma atmosphere within the process chamber (110) in a capacitive coupling (CCP) manner.

[0047] The thin film formed on the substrate (S) may include various materials. For example, the thin film may include an insulating layer, a metal layer, etc. Furthermore, the thin film may be a single layer or a composite layer in which two or more layers are stacked. For example, the thin film may include an oxide layer, a nitride layer, or a stacked structure of an oxide layer and a nitride layer.

[0048] In the step (S30) of removing the substrate (S), the substrate (S) on which the thin film is formed can be removed from the process chamber (110). For example, the substrate (S) can be removed from the substrate processing device (100) by passing through a transfer chamber (not shown) and a load lock chamber (not shown) combined with the process chamber (110).

[0049] In the particle control step (S40), with the substrate (S) removed from the process chamber (110), control voltages of different polarities are applied alternately to the electrostatic electrode (158) at least once to reduce or remove particles inside the process chamber (110). Accordingly, the particle control step (S40) can be performed when the substrate (S) is removed from the process chamber (110) and there is no substrate (S) on the substrate support (130). In the particle control step (S40), particles floating or attached inside the process chamber (110) can be effectively reduced or removed. For example, particles inside the process chamber (110) can be discharged outside the process chamber (110) through the exhaust pipe (114).

[0050] For example, when processing multiple substrates (S) in succession using a substrate processing device (100), the particle control step (S40) may be performed after processing and removing one substrate (S) from the process chamber (110) and before loading another substrate (S) into the process chamber (110). That is, the particle control step (S40) may be performed at intervals during the swapping of substrates (S). For example, in the case of a process where a large amount of particles are generated, the particle control step (S40) may be performed after processing each substrate (S), and in the case of a process where not much particle generation occurs, it may be performed after processing multiple substrates (S).

[0051] In some embodiments, the substrate processing method may sequentially repeat the steps of chucking the substrate (S10), forming a thin film (S20), removing the substrate (S) (S30), and controlling particles (S40) multiple times to process a plurality of substrates (S).

[0052] The aforementioned particle control step (S40) may be performed as a particle control method separately from substrate processing in the substrate processing device (100). For example, the particle control method of the substrate processing device (100) may include the particle control step (S40) when the substrate (S) is not seated on the substrate support (130) in the process chamber (110). This particle control method may be performed not only during the swapping of the aforementioned substrates (S) but also in various states where the substrates (S) are not loaded. For example, it may be performed when there are no substrates (S) in the process chamber (110) after cleaning or after a seasoning process of the process chamber (110).

[0053] In the following, the particle control step (S40) in the embodiments of the present invention will be described in more detail.

[0054] FIG. 3 is a flowchart showing a particle control step (S40) according to embodiments of the present invention.

[0055] Referring to FIG. 1 and FIG. 3 together, the particle control step (S40) can be performed by repeating the cycle (S49) at least once. For example, the cycle (S49) may include a step (S41) of forming a plasma atmosphere within a process chamber (110), a step (S43) of applying a first control voltage of a first polarity to an electrostatic electrode (158) while the plasma atmosphere is formed within the process chamber (110), and a step (S45) of applying a second control voltage of a second polarity opposite to the first polarity to the electrostatic electrode (158) while the plasma atmosphere is formed within the process chamber (110). Here, the absolute values ​​of the first control voltage and the second control voltage may be greater than the absolute value of the electrostatic voltage to increase particle removal efficiency.

[0056] In each cycle (S49), in the step (S41) of forming a plasma atmosphere, an RF voltage can be supplied from the RF power supply (140) to the gas injection unit (120) to form a plasma atmosphere within the process chamber (110) in a capacitive coupling (CCP) manner. Subsequently, in steps (S43, S45), alternating voltages can be applied to the electrostatic electrode (158). For example, a + control voltage can be applied in step (S43), and then a - control voltage can be applied in step (S45). As another example, a - control voltage can be applied in step (S43), and then a + control voltage can be applied in step (S45).

[0057] In some embodiments, the cycle (S49) may include a step (S47) of discharging particles in the process chamber (110) after the step of applying the second control voltage. For example, the discharge step (S47) may be performed by supplying purge gas into the reaction space (112) with the plasma atmosphere in the process chamber (110) turned off.

[0058] For example, RF power supplied from the RF power supply unit (140) to the gas injection unit (120) can be removed, and purge gas, such as inert gas, can be injected into the reaction space (112) through the gas injection unit (120). This purge gas can be pumped through an exhaust pipe (114) connected to a vacuum pump, and floating particles in the process chamber (110) can be discharged outside the process chamber (110) through the exhaust pipe (114) according to the flow of this purge gas.

[0059] The discharge step (S47) may be performed by applying a predetermined electrostatic voltage to the electrostatic electrode (158) to generate electrostatic power, or by removing the electrostatic voltage applied to the electrostatic electrode (158) to remove electrostatic power. For example, the discharge step (S47) may be performed by applying a first control voltage to the electrostatic electrode (158) or by applying a second control voltage to the electrostatic electrode (158).

[0060] In the particle control step (S40), the cycle (S49) needs to be appropriately limited to ensure the removal of particles within the process chamber (110), while increasing the number of cycles to prevent a decrease in productivity due to an excessive increase in process time. For example, in the particle control step (S40), the cycle (S49) can be performed within a range of 5 to 20 times, taking into account particle removal and process time.

[0061] Below, the process of removing particles in the particle control step (S40) is schematically explained.

[0062] FIG. 7 is a schematic diagram of a substrate processing apparatus showing changes in particles at each step in a substrate processing method according to embodiments of the present invention.

[0063] Referring to FIG. 7, in step (S43) within the cycle (S49) of the particle control step (S40), a first control voltage can be applied to the electrostatic electrode (158) to charge particles within the process chamber (110) while a plasma atmosphere is formed within the process chamber (110). For example, if the first control voltage is a negative voltage, the particles can be charged with a negative charge. In this respect, step (S43) may be called a charging step. Conversely, if the first control voltage is a positive voltage, the particles can be charged with a positive charge. However, since it is easier for the particles to be charged with a negative charge, the first control voltage may be preferentially selected as a negative voltage, but the opposite case may not be excluded.

[0064] Next, in step (S45), a second control voltage can be applied to the electrostatic electrode (158) while a plasma atmosphere is formed in the process chamber (110) to peel off charged particles in the process chamber (110). For example, if the second control voltage is a positive voltage, negatively charged particles can be peeled off in the direction of the substrate support (130). In this respect, step (S45) may be called a peeling step. Conversely, if the second control voltage is a negative voltage, positively charged particles can be peeled off in the direction of the substrate support (130).

[0065] Next, in step (S47), the detached particles in the process chamber (110) can be discharged from the process chamber (110).

[0066] In each cycle (S49), particles can be charged and detached by applying an alternating voltage with changing polarity. Thus, according to the particle control step (S40), particles attached within the process chamber (110) can be charged and detached and discharged through an electric field, thereby effectively reducing and removing particles attached within the process chamber (110). Through this particle control, process stability within the process chamber (110) can be increased.

[0067] Below, the step-by-step power application in the substrate processing method according to the present invention will be explained in more detail.

[0068] FIG. 4 is a timing chart showing changes in electrostatic voltage and RF voltage step by step in a substrate processing method according to one embodiment of the present invention.

[0069] Referring to FIGS. 1 and FIGS. 4, in the step (S10) of chucking the substrate (S), after the substrate (S) is placed on the substrate support (130), an electrostatic voltage (-Ve) can be applied. Here, the electrostatic voltage is exemplified as a negative voltage, but it may be changed to a positive voltage.

[0070] In the step (S20) of forming a thin film, in order to maintain a plasma atmosphere in the process chamber (110) while the substrate (S) is chucked to the substrate support (130) by maintaining an electrostatic voltage (-Ve), an RF voltage (+Vrf) from an RF power supply (140) can be applied to the gas injection unit (120).

[0071] In the step (S30) of removing the substrate (S), the electrostatic voltage (-Ve) is removed, and the RF voltage (+Vrf) can also be removed.

[0072] In the particle control step (S40), alternating voltages (-Vc, +Vc) may be applied to the electrostatic electrode (158). For example, in step (S41), an RF voltage (+Vrf) may be applied to the gas injection unit (120), in step (S43), a first control voltage (-Vc) of the first polarity may be applied to the electrostatic electrode (158), and in step (S45), a second control voltage (+Vc) of the second polarity may be applied to the electrostatic electrode (158). The RF voltage (+Vrf) may be continuously supplied during steps (S43, S45). In the discharge step (S47), the RF voltage (+Vrf) may be removed, and a first control voltage (-Vc) of the first polarity may be applied to the electrostatic electrode (158).

[0073] In this embodiment, the first control voltage applied to the electrostatic electrode (158) may be a negative voltage, and the second control voltage may be a positive voltage. As described above, the absolute value (Vc) of the first control voltage and the second control voltage may be greater than the absolute value (Ve) of the electrostatic voltage in order to increase charging and peeling efficiency.

[0074] FIG. 5 is a timing chart showing changes in electrostatic voltage and RF voltage step by step in a substrate processing method according to another embodiment of the present invention. This embodiment is a modified version of the embodiment of FIG. 4, and since the embodiments can be referenced from one another, redundant descriptions are omitted.

[0075] Referring to FIG. 5, in the particle control step (S40), in the discharge step (S47) within the cycle (S49), the RF voltage (+Vrf) can be removed and the electrostatic voltage can be removed. Since particles can be removed by the exhaust force of the purge gas in the discharge step (S47), the electrostatic voltage may not be applied.

[0076] FIG. 6 is a timing chart showing changes in electrostatic voltage and RF voltage step by step in a substrate processing method according to another embodiment of the present invention. This embodiment is a modified version of some configurations of the embodiments of FIG. 4 and FIG. 5, and since the embodiments can be referenced to one another, redundant descriptions are omitted.

[0077] Referring to FIG. 6, in the particle control step (S40), in step (S41) within the cycle (S49), an RF voltage (+Vrf) may be applied to the gas injection unit (120), in step (S43), a first control voltage (+Vc) may be applied to the electrostatic electrode (158), and in step (S45), a second control voltage (-Vc) may be applied to the electrostatic electrode (158). In this case, in step (S43), particles may be positively charged, and in step (S4), positively charged particles may be detached.

[0078] Below, a substrate processing method according to comparative examples and embodiments is described.

[0079] FIG. 8 is a graph showing the number of particles on a substrate after processing according to the substrate processing method according to comparative examples and embodiments. Comparative Example 1 shows a case where substrates are processed without a particle control step, Comparative Example 2 shows a case where a particle control step is added but only one polarity voltage is applied to the electrostatic electrode, and the embodiment shows a case where alternating voltages of the electrostatic electrode are applied according to the particle control step of the present invention described above.

[0080] Referring to FIG. 8, it can be seen that in Comparative Example 1, the number of particles increased rapidly as the number of substrates processed increased. In Comparative Example 2, it can be seen that the number of particles hardly increased until 400 million substrates were processed twice, but gradually increased from the third processing. On the other hand, in the Example, it can be seen that the number of particles hardly increased until 400 million substrates were processed four times. Therefore, through the particle control step according to the Example, it can be seen that particles in the process chamber (110) are effectively removed, and that even after processing a large number of substrates, almost no particles are generated on the substrates.

[0081] According to the particle control method and substrate processing method described above, particles within the substrate processing device (100) can be effectively reduced or removed. Accordingly, process stability using the substrate processing device (100) can be increased. Furthermore, by controlling particles, the maintenance cycle for the substrate processing device (100) can be extended, thereby increasing the productivity of the substrate processing device (100).

[0082] Accordingly, according to the substrate processing methods of the embodiments of the present invention, when depositing a thick thin film or ultra-high-step alternating deposition of heterogeneous thin films, process stability can be improved by reducing thickness non-uniformity and reducing particles.

[0083] The present invention has been described with reference to the embodiments illustrated in the drawings, but this is merely illustrative, and those skilled in the art will understand that various modifications and equivalent alternative embodiments are possible therefrom. Accordingly, the true technical scope of protection of the present invention should be determined by the technical spirit of the appended claims.

Claims

1. A method for processing a substrate using a substrate processing apparatus comprising: a process chamber having a reaction space formed therein; a substrate support member coupled to the process chamber for supporting the substrate and including an electrostatic electrode inside; a gas injection member installed in the process chamber to supply process gas to the reaction space; and an RF power supply member for forming a plasma atmosphere within the process chamber. A step of placing a substrate on the substrate support within the process chamber and applying an electrostatic voltage to the electrostatic electrode to chuck the substrate on the substrate support; A step of supplying a process gas to the reaction space to form a thin film on a substrate chucked on the substrate support; A step of de-chucking a substrate from the substrate support and removing the substrate from the process chamber; and A particle control step comprising, when the substrate is removed from the process chamber, applying control voltages of different polarities alternately to the electrostatic electrode at least once to reduce particles inside the process chamber. Substrate processing method.

2. In Paragraph 1, The above particle control step is performed by repeating the cycle at least once, wherein the cycle is, A step of forming a plasma atmosphere within the above process chamber; A step of applying a first control voltage of a first polarity to the electrostatic electrode while a plasma atmosphere is formed within the process chamber; and The step of applying a second control voltage of a second polarity opposite to the first polarity to the electrostatic electrode while a plasma atmosphere is formed within the process chamber, Substrate processing method.

3. In Paragraph 2, A substrate processing method comprising the step of discharging particles within the process chamber after the step of applying the second control voltage.

4. In Paragraph 3, A substrate processing method in which the above-mentioned discharge step is performed by supplying purge gas into the reaction space while the plasma atmosphere in the process chamber is turned off.

5. In Paragraph 4, A substrate processing method in which the above discharge step is performed while applying the first control voltage or the second control voltage to the electrostatic electrode.

6. In Paragraph 2, A substrate processing method in which the first control voltage is a negative voltage and the second control voltage is a positive voltage.

7. In Paragraph 2, A substrate processing method in which the absolute values ​​of the first control voltage and the second control voltage are greater than the absolute value of the electrostatic voltage.

8. In Paragraph 1, A substrate processing method comprising repeating the steps of chucking the substrate, forming the thin film, removing the substrate, and controlling the particles in sequence multiple times.

9. A particle control method for a substrate processing apparatus comprising: a process chamber having a reaction space formed therein; a substrate support member coupled to the process chamber for supporting a substrate and including an electrostatic electrode inside; a gas injection member installed in the process chamber to supply process gas to the reaction space; and an RF power supply member for forming a plasma atmosphere within the process chamber. A particle control step comprising reducing particles inside the process chamber by alternately applying control voltages of different polarities to the electrostatic electrodes at least once while the substrate is not seated on the substrate support inside the process chamber. Particle control method for a substrate processing device.

10. In Paragraph 9, The above particle control step is performed by repeating the cycle at least once, wherein the cycle is, A step of forming a plasma atmosphere within the above process chamber; A step of applying a first control voltage of a first polarity to the electrostatic electrode while a plasma atmosphere is formed within the process chamber; and The step of applying a second control voltage of a second polarity opposite to the first polarity to the electrostatic electrode while a plasma atmosphere is formed within the process chamber, Particle control method for a substrate processing device.

11. In Paragraph 10, A particle control method for a substrate processing apparatus, wherein the above cycle includes the step of discharging particles within the process chamber after the step of applying the second control voltage.

12. In Paragraph 11, A particle control method for a substrate processing apparatus, wherein the above-mentioned discharge step is performed by supplying purge gas into the reaction space while the plasma atmosphere in the process chamber is turned off.

13. In Paragraph 12, A particle control method of a substrate processing device, wherein the above discharge step is performed while applying the first control voltage or the second control voltage to the electrostatic electrode.

14. In Paragraph 10, A particle control method for a substrate processing device, wherein the first control voltage is a negative voltage and the second control voltage is a positive voltage.

15. In Paragraph 10, A particle control method for a substrate processing apparatus, wherein the absolute values ​​of the first control voltage and the second control voltage are greater than the absolute value of the electrostatic voltage applied to the electrostatic electrode to chuck a substrate on the substrate support.

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