Multi-zone semiconductor substrate support

Abstract

A multi-zone semiconductor substrate support is disclosed. An exemplary support assembly may include a top disk and a backing plate coupled to the top disk. The support assembly may include a cooling plate coupled to the backing plate. The support assembly may include a heater coupled between the cooling plate and the backing plate. The support assembly may also include a backing plate coupled to the backing plate around an exterior of the backing plate. The backing plate may at least partially define a volume, and the heater and the cooling plate may be contained within the volume.

Description

Technical Field

[0001] The present technology relates to components and devices used in semiconductor manufacturing. More specifically, the present technology relates to substrate support assemblies and other semiconductor processing equipment. Background Art

[0002] Integrated circuits are made possible by processes that produce complex patterned layers of material on a substrate surface. Producing patterned materials on a substrate requires controlled methods for forming and removing materials. The temperatures at which these processes occur can directly affect the final product. During processing, components that support the substrate are often used to control and maintain the substrate temperature. Temperature fluctuations that can occur across the surface of the support component or through the depth of the support component can create temperature zones or regions across the substrate. These regions with different temperatures can affect the processes performed on or to the substrate, which can often reduce the uniformity of films deposited or structures etched along the substrate. Depending on the extent of the variation along the surface of the substrate, device failures can occur due to inconsistencies created by the application.

[0003] Additionally, structures contained within a semiconductor processing chamber may be affected by the processes performed within the chamber. For example, materials deposited within the chamber may deposit on equipment within the chamber and on the substrate itself. Materials may also deposit on the support pedestal, which may cause problems with substrate alignment and redeposition on the substrate being processed.

[0004] Therefore, there is a need for improved systems and methods that can be used to produce high quality devices and structures. The present technology addresses these and other needs. Summary of the invention

[0005] An exemplary support assembly may include a top disk and a backing plate coupled to the top disk. The support assembly may include a cooling plate coupled to the backing plate. The support assembly may include a heater coupled between the cooling plate and the backing plate. The support assembly may also include a backing plate coupled to the backing plate around an exterior of the backing plate. The backing plate may at least partially define a volume, and the heater and the cooling plate may be contained within the volume.

[0006] In some embodiments, the top disk may define a thermal break between an inner zone and an outer zone of the top disk. The thermal break may be or may include a groove defined around an inner radius of the top disk. In an embodiment, the thermal break may include a first groove defined at a first surface of the top disk around the inner radius of the top disk, and a second groove defined at a second surface of the top disk opposite the first surface around a second inner radius of the top disk. At least one of the first groove and the second groove may extend discontinuously around the top disk. The cooling plate may define at least one channel within the cooling plate, the at least one channel being configured to distribute fluid delivered from the central port in the cooling plate.

[0007] In an embodiment, the heater may include a first heater coupled to the backing plate at a first position, and a second heater coupled to the backing plate at a second position radially outward from the first position. The cooling plate and the backing plate may define a gap radially located between the first heater and the second heater. In some embodiments, the second heater may extend to a radial edge of the top surface of the cooling plate. The first heater and the second heater may be configured to operate independently of each other. The first heater and the second heater may be configured to maintain a temperature uniformity of + / -0.5°C across the substrate on the substrate support assembly. The top disk may be or include aluminum. The heater may be or include a polymer heater. The top disk may define at least one concave ledge around the outer radius of the top disk. The substrate support assembly may include an edge ring, and the edge ring may extend around the top disk along the concave ledge. The edge ring may extend vertically above the top plane of the top disk. The edge ring may be characterized by an outer diameter equal to the outer diameter of the top disk. The top disk may define a plurality of recesses, and the edge ring may be configured to be seated on a ceramic pin located within the plurality of recesses. In some embodiments, the edge ring may be seated on the ceramic pin without contacting the top disk.

[0008] The present technology also encompasses a substrate support assembly that may include a top disk. The substrate support assembly may include a plurality of heaters coupled to the top disk. The heaters may include a resistive heater extending across a rear surface of the top disk. The substrate support assembly may include a cooling plate coupled to the plurality of heaters at a first surface of the cooling plate. The cooling plate may define a channel configured to distribute a temperature-controlled fluid through the cooling plate. The substrate support assembly may also include an insulator coupled to a second surface of the cooling plate opposite the first surface.

[0009] In some embodiments, the top disk and the insulator may include ceramic. The plurality of heaters may include at least four printed heaters, and in embodiments, at least three of the four printed resistive heaters may be characterized by an annular shape. The top disk and the cooling plate may define a channel extending below an outer edge of the top disk, and the channel may be configured to seat an elastomeric element. In some embodiments, the substrate support assembly may further include an edge ring positioned around an exterior of the cooling plate along the recessed ledge.

[0010] This technology can provide many benefits over conventional systems and techniques. For example, a special heating and cooling device coupling can provide improved heating and cooling performance to improve wafer process uniformity. In addition, various purge channels can improve the removal of residual particles during manufacturing operations. These and other embodiments and their many advantages and features are described in more detail in conjunction with the following description and accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] A further understanding of the nature and advantages of the disclosed technology may be realized by reference to the remaining portions of the specification and the accompanying drawings.

[0012] Figure 1 A top plan view of an exemplary processing system in accordance with embodiments of the present technology is shown.

[0013] Figure 2A A schematic cross-sectional view of an exemplary processing chamber in accordance with an embodiment of the present technology is shown.

[0014] Figure 2B Shown is a detailed view of an exemplary sprayhead in accordance with an embodiment of the present technology.

[0015] Figure 3 A bottom plan view of an exemplary showerhead in accordance with an embodiment of the present technology is shown.

[0016] Figure 4 A schematic partial cross-sectional view of an exemplary substrate support assembly in accordance with an embodiment of the present technology is shown.

[0017] Figure 5 A schematic partial cross-sectional view of an exemplary substrate support assembly in accordance with an embodiment of the present technology is shown.

[0018] Figure 6 A top plan view of an exemplary backing plate in accordance with an embodiment of the present technology is shown.

[0019] Fig. 7A A schematic partial cross-sectional view of an exemplary substrate support assembly in accordance with an embodiment of the present technology is shown.

[0020] Figure 7B A schematic partial cross-sectional view of an exemplary substrate support assembly in accordance with an embodiment of the present technology is shown.

[0021] Figure 7C A schematic partial cross-sectional view of an exemplary substrate support assembly in accordance with an embodiment of the present technology is shown.

[0022] Figure 8 A schematic partial cross-sectional view of an exemplary substrate support assembly in accordance with an embodiment of the present technology is shown.

[0023] Fig. 9 A schematic partial cross-sectional view of an exemplary substrate support assembly in accordance with an embodiment of the present technology is shown.

[0024] Several figures are included as schematic diagrams. It should be understood that these figures are for illustrative purposes and should not be considered to scale unless specifically stated to be to scale. Furthermore, as schematic diagrams, these figures are provided to aid understanding and may not include all aspects or information compared to actual representation and may include material that is exaggerated for illustrative purposes.

[0025] In the accompanying drawings, similar components and / or features may have the same reference numerals. Further, various components of the same type may be distinguished by following the reference numeral with a letter that distinguishes between the similar components. If only the first reference numeral is used in the specification, the description applies to any of the similar components having the same first reference numeral, regardless of the letter. DETAILED DESCRIPTION

[0026] The present technology includes an improved susceptor design for heating and cooling distribution during semiconductor processing operations. While conventional susceptors can control the overall temperature of a substrate during operation, the present technology described allows for improved control of temperature characteristics across the entire surface and exterior of the susceptor. The technology allows the susceptor to be controlled in multiple independent zones within a limited temperature range. In this way, improved operation can be performed because a substrate residing on the susceptor can maintain a more uniform temperature distribution across the entire surface. These and other benefits will be explained in detail below.

[0027] While the remainder of the disclosure will routinely identify specific etching processes utilizing the disclosed technology, it will be readily appreciated that the systems and methods are equally applicable to deposition and cleaning processes that may occur in the chamber. Therefore, the technology should not be considered as being so limited to use with only etching processes. The present disclosure will discuss one possible system and chamber that may be used with the present technology to perform certain removal operations, and then describe additional changes and adjustments to this system in accordance with embodiments of the present technology.

[0028] Figure 1A top plan view of one embodiment of a processing system 100 of deposition, etching, baking and curing chambers according to an embodiment is shown. In the figure, a pair of front opening unified wafer boxes (FOUPs) 102 supply substrates of various sizes, which are received by a robotic arm 104 and placed into a low pressure holding area 106 before being placed into one of the substrate processing chambers 108a-f, which are positioned in the series section 109a-c. A second robotic arm 110 can be used to transfer substrate wafers from the holding area 106 to the substrate processing areas 108a-f and back. Each substrate processing chamber 108a-f can be equipped to perform a number of substrate processing operations, including the dry etching process described herein in addition to cyclic layer deposition (CLD), atomic layer deposition (ALD), chemical vapor deposition (CVD), physical vapor deposition (PVD), etching, pre-cleaning, degassing, orientation and other substrate processes.

[0029] The substrate processing chambers 108a-f may include one or more system components for depositing, annealing, curing and / or etching a dielectric film on a substrate wafer. In one configuration, two pairs of substrate processing chambers (e.g., 108c-d and 108e-f) may be used to deposit a dielectric film on a substrate, and a third pair of substrate processing chambers (e.g., 108a-b) may be used to anneal / cure the deposited dielectric. In another configuration, all three pairs of substrate processing chambers (e.g., 108a-f) may be configured to etch a dielectric film on a substrate. Any one or more of the processes may be performed in a chamber separate from the manufacturing system shown in different embodiments. It will be appreciated that the system 100 also contemplates additional configurations of deposition chambers, etching chambers, baking chambers, and curing chambers for dielectric films.

[0030] Figure 2A A cross-sectional view of an exemplary processing chamber system 200 having a separated plasma generation region within the processing chamber is shown. During film etching, process gases such as titanium nitride, tantalum nitride, tungsten, silicon, polysilicon, silicon oxide, silicon nitride, silicon oxynitride, silicon oxycarbide, etc. can flow into the first plasma region 215 through the gas inlet assembly 205. A remote plasma system (RPS) 201 can be optionally included in the system and can process a first gas, which then travels through the gas inlet assembly 205. The gas inlet assembly 205 can include two or more different gas supply channels, wherein a second channel (not shown) can bypass the RPS 201 (if included).

[0031] A cooling plate 203, a face plate 217, an ion suppressor 223, a showerhead 225, and a pedestal 265 having a substrate 255 disposed thereon are shown and may each be included depending on the embodiment. The pedestal 265 may have heat exchange channels through which a heat exchange fluid flows to control the temperature of the substrate, and the pedestal may be operated to heat and / or cool the substrate or wafer during processing operations. The wafer support plate of the pedestal 265, which may include aluminum, ceramic, or a combination thereof, may also be resistively heated using embedded resistive heater elements to achieve relatively high temperatures, such as from up to or about 100° C. to above or about 1100° C.

[0032] The panel 217 may be a pyramid, cone, or other similar structure with a narrow top portion extending to a wide bottom portion. As shown, the panel 217 may alternatively be flat and include a plurality of channels for distributing process gases. As shown, the panel 217 may alternatively be flat and include a plurality of channels for distributing process gases. Depending on the use of the RPS 201, the plasma generating gas and / or plasma exciting species may pass through a plurality of holes in the panel 217, such as Figure 2B As shown, the ions are more uniformly delivered into the first plasma region 215 .

[0033] An exemplary configuration may include opening the gas inlet assembly 205 into a gas supply region 258 separated from the first plasma region 215 by a faceplate 217, such that gas / species flows into the first chamber plasma region 215 through holes in the faceplate 217. Structural and operational features may be selected to prevent plasma from substantially flowing back from the first plasma region 215 into the gas supply region 258, the gas inlet assembly 205, and the fluid supply system 210. The faceplate 217 (or conductive top of the chamber) and the showerhead 225 are shown with an insulating ring 220 positioned between the features, which allows an AC potential to be applied to the faceplate 217 relative to the showerhead 225 and / or the ion suppressor 223. The insulating ring 220 may be positioned between the faceplate 217 and the showerhead 225 and / or the ion suppressor 223, thereby enabling a capacitively coupled plasma (CCP) to form in the first plasma region. Baffles (not shown) may additionally be located in the first plasma region 215 or otherwise coupled to the gas inlet assembly 205 to affect the flow of fluid through the gas inlet assembly 205 into this region.

[0034] The ion suppressor 223 may include a plate or other geometric structure that defines a plurality of holes throughout the structure that are configured to suppress the migration of ionic charged species out of the first plasma region 215 while allowing uncharged neutral or radical species to pass through the ion suppressor 223 into the activated gas delivery region between the suppressor and the showerhead. In an embodiment, the ion suppressor 223 may include a porous plate having a variety of hole configurations. These uncharged species may include highly reactive species that are transported through the holes along with a less reactive carrier gas. As described above, the migration of ionic species through the holes may be reduced, and in some cases may be completely suppressed. Controlling the amount of ionic species that pass through the ion suppressor 223 may advantageously provide increased control over the gas mixture that contacts the underlying wafer substrate, which in turn may increase control over the deposition and / or etching characteristics of the gas mixture. For example, adjustment of the ion concentration of the gas mixture may significantly change its etching selectivity, for example, SiN x :SiO x Etching ratio, Si:SiO x Etch ratios, etc. In alternative embodiments where deposition is performed, this may also shift the balance of conformal to flowable deposition of dielectric materials.

[0035] The plurality of holes in the ion suppressor 223 may be configured to control the flow of activated gas (i.e., ionic, radical, and / or neutral species) through the ion suppressor 223. For example, the hole aspect ratio, or the ratio of hole diameter to length, and / or the hole geometry may be controlled to reduce the flow of ionically charged species in the activated gas through the ion suppressor 223. The holes in the ion suppressor 223 may include a conical portion facing the first plasma region 215 and a cylindrical portion facing the showerhead 225. The shape and size of the cylindrical portion may be set to control the flow of ion species to the showerhead 225. An adjustable electrical bias may also be applied to the ion suppressor 223 as an additional means of controlling the flow of ion species through the suppressor.

[0036] The ion suppressor 223 can be used to reduce or eliminate the amount of ionically charged species that travel from the plasma generation region to the substrate. Neutral and free radical species that are not charged can still pass through the openings in the ion suppressor to react with the substrate. It should be noted that in embodiments, complete elimination of ionically charged species in the reaction region around the substrate may not be performed. In some cases, ion species are intended to reach the substrate to perform etching and / or deposition processes. In these cases, the ion suppressor can help control the concentration of ion species in the reaction region at a level that is conducive to the process.

[0037] The showerhead 225 in combination with the ion suppressor 223 can allow the plasma present in the first plasma region 215 to avoid directly exciting the gases in the substrate processing region 233, while still allowing the excited species to travel from the first plasma region 215 into the substrate processing region 233. In this way, the chamber can be configured to prevent the plasma from contacting the substrate 255 being etched. This can advantageously protect the various complex structures and films patterned on the substrate, which may be damaged, misaligned, or warped if directly contacted by the generated plasma. In addition, when the plasma is allowed to contact the substrate or approach the level of the substrate, the rate of etching of oxide species may increase. Therefore, if the exposed material area is an oxide, then this material can be further protected by maintaining the plasma away from the substrate.

[0038] The processing system may further include a power supply 240 electrically coupled to the processing chamber to provide power to the panel 217, the ion suppressor 223, the showerhead 225, and / or the pedestal 265 to generate plasma in the first plasma region 215 or the processing region 233. The power supply can be configured to deliver an adjustable amount of power to the chamber depending on the process being performed. This configuration allows a tunable plasma to be used in the process being performed. Unlike a remote plasma unit that typically has an on or off function, a tunable plasma can be configured to deliver a specific amount of power to the first plasma region 215. This in turn can allow specific plasma characteristics to be formed so that precursors can be dissociated in a specific manner to enhance the etching distribution produced by these precursors.

[0039] Plasma may be ignited in the first plasma region 215 above the showerhead 225 or in the substrate processing region 233 below the showerhead 225. Plasma may exist in the first plasma region 215 to generate radical precursors by, for example, the inflow of a fluorine-containing precursor or other precursor. An AC voltage, typically in the radio frequency (RF) range, may be applied between the conductive top of the processing chamber (e.g., face plate 217) and the showerhead 225 and / or ion suppressor 223 to ignite the plasma in the first plasma region 215 during deposition. The RF power supply may generate a high RF frequency of 13.56 MHz, but other frequencies may also be generated alone or in combination with the 13.56 MHz frequency.

[0040] Figure 2B A detailed view 253 of features affecting the distribution of process gases through the panel 217 is shown. Figure 2A and 2BAs shown, the faceplate 217, the cooling plate 203, and the gas inlet assembly 205 intersect to define a gas supply region 258 into which the process gas can be delivered from the gas inlet assembly 205. The gas can fill the gas supply region 258 and flow into the first plasma region 215 through the holes 259 in the faceplate 217. The holes 259 can be configured to direct the flow in a substantially unidirectional manner, such that the process gas can flow into the processing region 233, but can be partially or completely prevented from flowing back into the gas supply region 258 after passing over the faceplate 217.

[0041] A gas distribution assembly such as showerhead 225 used in a process chamber section may be referred to as a dual channel showerhead (DCSH) and is further shown in detail in FIG. Figure 3 In the embodiments described in . A dual channel showerhead may be provided for the etching process, thereby allowing the etchant outside the processing region 233 to be separated before being delivered into the processing region to provide limited interaction with chamber components and each other.

[0042] The showerhead 225 may include an upper plate 214 and a lower plate 216. The plates may be coupled to each other to define a volume 218 between the plates. The plates may be coupled to provide a first fluid passage 219 through the upper and lower plates, and a second fluid passage 221 through the lower plate 216. The formed passages may be configured to provide fluid access from the volume 218 through the lower plate 216 only via the second fluid passage 221, and the first fluid passage 219 may be fluidically isolated from the volume 218 between the plate and the second fluid passage 221. The volume 218 may be fluid accessible through one side of the gas distribution assembly 225.

[0043] Figure 3 FIG. 3 is a bottom view of a showerhead 325 for use with a processing chamber according to an embodiment. The showerhead 325 may be used with Figure 2A 2. The through-holes 365, which show a view of the first fluid channel 219, can have a variety of shapes and configurations to control and influence the flow of precursors through the showerhead 225. The small holes 375, which show a view of the second fluid channel 221, can be substantially evenly distributed over the surface of the showerhead, even between the through-holes 365, and can help to make the precursors more evenly mixed when they leave the showerhead than other configurations.

[0044] Figure 4A schematic partial cross-sectional view of an exemplary substrate support assembly 400 according to an embodiment of the present technology is shown. The substrate support assembly 400 may be similar to the substrate support or pedestal 265 previously discussed, and may include some or all of the features discussed above using this structure. As shown, the substrate support assembly 400 includes a top disk 405, a backing plate 415, a heater 425, a cooling plate 435, and a backing plate 445. The backing plate 415 may be coupled to the top disk 405. The cooling plate 435 may be directly or indirectly coupled to the backing plate 415, and the heater 425 may be coupled between the cooling plate 435 and the backing plate 415. The backing plate 445 may be coupled to the backing plate 415 along a perimeter or outer portion 417 of the backing plate 415. The backing plate 445 may define a ledge 447 in a top surface 446 of the backing plate 445, and the ledge 447 extends downward to an inner region 449 of the backing plate 445 defined in the top surface 446. The inner region 449 of the back plate 445 can extend radially from the central axis of the back plate 445 and can define the volume 450 from below. The back plate 445 can also define the sides of the volume 450, wherein the raised portion 451 of the back plate 445 extends perpendicular to the crosspiece 447.

[0045] The backing plate 445 and the backing plate 415 can be characterized by similar or identical outer diameters, such that the coupled components define substantially vertical sidewalls of the substrate support assembly 400. The backing plate 415 can at least partially define a volume 450 from above, such that the volume 450 is a defined volume within the substrate support assembly 400. In an embodiment, the heater 425 and the cooling plate 435 can be housed within the volume 450. The raised portion 451 of the backing plate 445 can also include a groove 452 defined in the top surface 446 of the backing plate 445. The groove 452 can be configured to seat an O-ring or elastomeric element to provide a seal between the backing plate 445 and the backing plate 415.

[0046] The top disk 405 can define one or more thermal breaks 408, 410 within the top disk 405, and the top disk 405 can at least partially define one or more channels together with the backing plate 415, which will be described in more detail below. In embodiments, the top disk 405 can define any number of thermal breaks within the top disk 405, and can include at least or about 2, at least or about 3, at least or about 4, at least or about 5, at least or about 6, at least or about 7, at least or about 8, at least or about 9, at least or about 10 or more. In some embodiments, such as shown in the substrate support assembly 400, the top disk 405 can define one or two thermal breaks. The first thermal break 408 can be defined within the top surface 406 of the top disk 405, and can be characterized by a depth through the top disk 405.

[0047] In an embodiment, the first thermal break 408 may be radially defined around the top disk 405 and may be configured to at least partially divide the top disk 405 into an inner zone 412 and an outer zone 414. The first thermal break 408 may be or include a groove defined around the top disk 405 along an inner radius of the top disk. In an embodiment, the depth of the first thermal break 408 may be greater than half of the thickness of the top disk 405, and may be greater than or about 60% of the thickness of the top disk 405, greater than or about 70% of the thickness of the top disk 405, greater than or about 80% of the thickness of the top disk 405, greater than or about 90% of the thickness of the top disk 405, or equal to or about 100% of the thickness of the top disk 405. In the case where the groove completely intersects the top disk 405, the inner zone 412 and the outer zone 414 may be two separate components that are separately coupled to the backing plate 415. In an embodiment, the first thermal break 408 can be configured to thermally isolate the inner zone 412 and the outer zone 414. Such isolation can allow the inner zone 412 and the outer zone 414 to be heated or cooled separately during operation.

[0048] The thermal break can include a plurality of breaks, including a second thermal break 410, which can be defined in the bottom surface 407 of the top disk 405 or in a surface opposite to the first surface or the top surface 406. The second thermal break 410 can be defined at a second inner radius of the top disk 405, which can be radially inward or radially outward relative to the first thermal break 408. The second thermal break 410 can be characterized by a second depth through the top disk 405, which can be greater than, equal to, or less than the first depth of the first thermal break 408. For example, as shown, the second thermal break 410 can be characterized by a depth that is less than the depth of the first thermal break 408. Either or both of the first thermal break 408 and the second thermal break 410 can extend continuously or discontinuously around the top disk 405. For example, the first thermal break 408 may extend substantially continuously around the top disk 405, except that there may be one or more connections, such as an extension of minimum thickness, across a bottom region of the first thermal break 408 to couple the inner region 412 of the top disk 405 to the outer region 414, which may allow for a one-piece design of the top disk 405. However, the second thermal break 410 may have portions of a radius around a groove where the groove is not formed through the top disk 405. This arrangement will be described in further detail below.

[0049] The benefit of multiple thermal breaks is that thermal breaks defined from the top surface and thermal breaks defined from the bottom surface can help reduce crosstalk between the two zones, which can allow for even finer temperature regulation between the zones. Top disk 405 can be constructed of any number of materials, and in embodiments can be or include an aluminum material. Top disk 405 can be any type of aluminum, including coated or plated aluminum. For example, in embodiments, top disk 405 can be nickel-plated or titanium-plated aluminum, which can protect top disk 405 from etching.

[0050] In an embodiment, the heater 425 may include a resistive heater or a fluid heater. The heater 425 may include a polymer heater that engages or couples with the top surface 436 of the cooling plate 435 and also engages or couples with the backing plate 415. The heater 425 may include a plurality of heaters in an embodiment, and may include a first heater 426 and a second heater 427. The first heater 426 may be coupled to the backing plate 415 at a first position, and the second heater 427 may be coupled to the backing plate 415 at a second position. The first heater 426 may be positioned in an inner region of the cooling plate 435, and may be positioned in or in line with the inner zone 412. The second heater 427 may be positioned in an outer region of the cooling plate 435, and may be positioned in or in line with the outer zone 414. In an embodiment, the second heater 427 may be positioned radially outward of the first thermal interrupt 408. The gap 437 may be defined from above by the backing plate 415 and may be defined from below by the cooling plate 435. The gap 437 can be located between the first heater 426 and the second heater 427, and can be an annular gap radially located between the two heaters. In some embodiments, the second heater 427 can extend close to the radial edge of the top surface 436 of the cooling plate 435, and the second heater 427 can extend to the radial edge of the top surface 436 of the cooling plate 435.

[0051] The first heater 426 and the second heater 427 may be operated independently of one another and may be capable of regulating the temperature across the top disk 405 and the substrate residing on the top disk 405. Each heater may have a range of operating temperatures extending to above or about 25°C, and each heater may be configured to heat to above or about 50°C, above or about 60°C, above or about 70°C, above or about 80°C, above or about 90°C, above or about 100°C, above or about 125°C, above or about 150°C, above or about 175°C, above or about 200°C, above or about 250°C, above or about 300°C, above or about 350°C, above or about 400°C, above or about 500°C, above or about 600°C, above or about 700°C, or more. The heater can also be configured to operate in any range included between any two of these stated numbers, or in a smaller range included in any of these ranges.

[0052] The first heater 426 and the second heater 427 may also be configured to operate within a temperature range of each other and to maintain a specific temperature across the surface of the top disk 405 or the surface of the substrate residing on the top disk 405. For example, the first heater 426 may be configured to operate to maintain the inner zone 412 at a first temperature, and the second heater 427 may be configured to operate to maintain the outer zone 414 at a second temperature that is similar to or different from the first temperature. Each temperature of the heater or zone may be any temperature set forth or included above, which may allow the two heaters to operate with a difference of tens or hundreds of degrees. Additionally, in embodiments, the difference between the operating temperatures of the two heaters or between the maintained temperatures of the inner zone 412 and the outer zone 414 may be less than 10°C. The temperature difference between the two heaters or the temperature difference maintained by the two zones can also be less than or about 5°C, less than or about 4°C, less than or about 3°C, less than or about 2°C, less than or about 1°C, less than or about 0.9°C, less than or about 0.8°C, less than or about 0.7°C, less than or about 0.6°C, less than or about 0.5°C, less than or about 0.4°C, less than or about 0.3°C, less than or about 0.2°C, less than or about 0.1°C, or less. By allowing such a slight temperature difference between the two zones, temperature fluctuations that occur due to the flow of precursors across the substrate, interference from other chamber components, reactions or operations that occur in one zone but not in another zone based on the manufacturing step, and other sources of fluctuations can be controlled during operation. This can allow for improved uniformity across zones and across the substrate being processed compared to conventional techniques.

[0053] The cooling plate 435 may define one or more channels 438 within the cooling plate 435. The channels 438 may be configured to distribute one or more temperature controlled fluids around the cooling plate 435. The channels 438 may be accessed from a central port 439 at a central or interior region of the cooling plate 435, which may be accessed from a rod of the substrate support assembly. The cooling fluid may be transported up the rod and into the central port 439, which may then allow the fluid to flow around the channels 438. The channels 438 may be in any number of geometric patterns, such as spirals or coils, as well as substantially concentric circles around the cooling plate 435. The pattern may extend to the exterior of the cooling plate 435 before returning to an outlet port, which may also be located at a central region of the cooling plate, and access to additional channels or couplings within the rod of the base may be provided to allow the fluid to return to a heat exchanger or other device for cooling and recirculation. As shown, the cooling plate 435 may not extend completely to the raised portion 451 of the backing plate 445, and a gap of volume 450 may be maintained between the radial edge of the cooling plate 435 and the raised portion 451 of the backing plate 445. Such a gap may limit or prevent thermal communication from the cooling plate 435 and the heater 425 to the backing plate 445, which may be conducted to the top disk 405.

[0054] The top disk 405 may define one or more recessed ledges 404 around the outer radius of the top disk 405. The recessed ledges 404 may extend or step down toward the edge of the top disk 405 and may be characterized by an outer diameter similar or equal to the outer diameter of the backing plate 415 and / or the backing plate 445. Figure 4 Two recessed ledges 404 are shown in FIG. 4 , but the top disk 405 may define any number of recessed ledges 404. Several aspects of the recessed ledges 404 and the top disk 405 are described in detail in FIG. Figure 5 It is further shown in Figure 5 Another schematic partial cross-sectional view of an exemplary substrate support assembly 400 is shown in accordance with embodiments of the present technology.

[0055] like Figure 5As shown, the substrate support assembly 400 may include a top disk 405, which may be characterized by a plurality of grooves 505, which may be formed or defined around the top disk 405. The grooves 505 may provide a path for forming a vacuum chuck to allow the substrate to reside on the top disk 405, and the vacuum chuck may limit the movement of the substrate during operation. As previously described, the top disk 405 may also define one or more recessed ledges 404. As shown, a first recessed ledge 404a and a second recessed ledge 404b are defined in the top disk 405, and the second recessed ledge 404b may extend to the outer edge of the top disk 405. The top disk 405 may define one or more recesses 510 within the top disk 405. The recesses 510 may be cylindrical recesses, rectangular recesses, or any other geometric shape, extending to a depth through the top disk 405. In an embodiment, the recesses 510 may be distributed around the edge area of ​​the top disk 405 and may include one recess, two recesses, three recesses, four recesses, five recesses, six recesses, seven recesses, eight recesses, nine recesses, ten recesses, or more.

[0056] The recess 510 may provide a location for a pin 515, which may be positioned within the recess 510 of the top disk 405. The recess 510 may be defined at any location around the outer region of the top disk 405, and in an embodiment, the recess 510 is defined within a recessed ledge 404 defined in the top disk 405. As shown, the recess 510 may be defined in a first recessed ledge 404a located below the top surface 406 of the top disk 405 and above a second recessed ledge 404b located below the first recessed ledge 404a. The recesses 510 may be defined in the recessed ledge 404a in a plurality of locations around the top disk 405, and in embodiments, the recessed ledge 404a may define between about 2 and about 10 recesses 510, between about 2 and about 5 recesses 510, or between about 2 and about 4 recesses 510. In some embodiments, the recessed ledge 404a may define three recesses 510 equally spaced around the top disk 405. The pin 515 may be or include a ceramic pin having a first portion 516 seated within the recess 510 and a second portion 517 extending above the recess 510. The second portion 517 of the pin 515 may define a surface on which the edge ring 520 is seated.

[0057] The edge ring 520 may be seated on a plurality of pins 515 located in a recess 510 within the top disk 405. The edge ring 520 may be a similar material or a different material than the top disk 405, and in embodiments, the edge ring 520 may include nickel-plated aluminum or other plated aluminum, which may limit corrosion of the edge ring 520, for example, during etching operations utilizing halogen-containing precursors. In embodiments, the edge ring 520 may extend around the top disk along the recessed ledge 404, and may extend vertically above the top disk 405 so as to extend vertically above the top plane of the top disk 405. The edge ring 520 may be characterized by an inner edge 522, which may be beveled or chamfered in embodiments, extending toward the top disk 405. The edge ring 520 may also be characterized by an outer diameter that is equal to or similar to the outer diameter of the top disk 405, such that in some embodiments, the edge ring 520 does not extend beyond the outer radius of the top disk 405. The edge ring 520 may be seated on pins 515 and may float above the top disk 405. In some embodiments, the edge ring 520 may not contact the top disk 405, which may allow for continuous spacing between each surface of the top disk 405 (including the recessed ledge 404) and the edge ring 520. A purge gas may flow through holes through the top disk 405 and extending through the recessed ledge 404, which may allow for continuous purge from around the edge ring 520. In some embodiments, the edge ring 520 may allow the amount of precursor flow from the outer edge of the chamber to be blocked to prevent or limit additional etching, deposition, or processing of the edge region of the substrate.

[0058] Figure 6 A top plan view of an exemplary backing plate 600 according to an embodiment of the present technology is shown. The backing plate 600 can be configured to at least partially define a flow channel with a top disk of a substrate support assembly and provide a passage for conveying a purge gas through a pedestal and a top disk to limit or prevent deposition, etching, or particle accumulation on the substrate support assembly. The backing plate 600 can be characterized by a substantially annular shape and can define a plurality of holes through the backing plate 600. The hole 605 can be aligned with the hole through the top disk to provide a direct path for applying a vacuum chuck through the backing plate 600 and an associated top disk (such as the previously described top disk 405). The holes 610 and the holes 615 can provide access to a channel defined between the backing plate 600 and a top disk coupled to the backing plate, which can direct the purge gas to an additional area of ​​the top disk.

[0059] The holes 610 may provide access to a first recess 612 defined by the top surface 602 of the backing plate 600. The backing plate 600 may define one or more holes 610 distributed radially around the backing plate 600, and as shown, four holes are shown along with corresponding first recesses 612, but depending on the geometry, size, and spacing of the particular substrate support assembly, the exemplary backing plate 600 may include more or fewer holes 610 and first recesses 612 in embodiments. The first recess 612 may be defined as spanning an outer portion of the backing plate 600, and may be defined radially or laterally from the hole 610 in two opposite directions. The respective arms of the first recess 612 may extend laterally before bending or deviating from the outer edge of the backing plate 600. Each arm along the first recess 612 may be an access hole through a top disk associated with the backing plate, which may provide a flow path for the purge gas.

[0060] The holes 615 may provide access to a second recess 616 defined by the top surface 602 of the backing plate 600. The backing plate 600 may define one or more holes 615 distributed radially around the backing plate 600, and as shown, four holes are shown along with corresponding second recesses 616, but depending on the geometry, size, and spacing of the particular substrate support assembly, the exemplary backing plate 600 may include more or fewer holes 615 and second recesses 616 in embodiments. The holes 615 providing access to the second recess 616 may be formed around the backing plate 600 in an alternating manner with the holes 610 providing access to the first recess 612, as shown in some embodiments. In embodiments, the second recess 616 may be defined radially inwardly toward a central region of the backing plate 600, and may define a recursive pattern that expands to two paths 618, and then may extend to four paths. Each arm along the second recess 616 may be an access hole through a top disk associated with the backing plate, which may provide a flow path for the purge gas. In this way, the combination of the first recess 612 as shown can provide access to a total of eight holes defined through the associated top disk, and the combination of the second recess 616 can provide access to 16 holes defined through the associated top disk and radially inwardly relative to the eight holes accessed from the first recess 612. Such a design can provide sufficient purge airflow through the top disk, which can limit or prevent particle accumulation on the surface of the top disk or around the substrate residing on the top disk. In other embodiments, any additional number of holes can be formed around and through the backing plate and the associated top disk.

[0061] The backing plate 600 may also define a third recess 625 extending around a radius of the backing plate 600, which may be aligned with a thermal break such as the first thermal break 408 described above. The backing plate 600 may also define a fourth recess 630, which, unlike any other recess discussed that may be defined within the top surface 602, may penetrate the backing plate 600 completely. The fourth recess 630 may be aligned with a thermal break such as the second thermal break 410 described above. Since the second thermal break 410 extends upward through the bottom of the top disk 405, a more consistent and more significant thermal break may be provided by providing a complete recess through the backing plate 600 using the fourth recess 630. One or both of the third recess 625 and the fourth recess 630 may also be aligned with a gap between heaters such as the gap 437 described above. This may provide an additional thermal break between the inner and outer zones of the substrate support assembly.

[0062] Steering Fig. 7A , Fig. 7A A schematic partial cross-sectional view of an exemplary substrate support assembly according to an embodiment of the present technology is shown. The cross section may be as shown in FIG. Figure 6 The through line A shown, for example, can provide an illustration of the hole 610 of the backing plate 600 and the first recess 612. The substrate support assembly can be similar to or an alternative view of the substrate support assembly 400 previously described, and can include a top disk 405, an edge ring 520, a backing plate 415, and a backing plate 445. As shown, the backing plate 445 can define one or more channels 705 for delivering the purge gas from a central region of the substrate support assembly (such as a rod) outward to the exterior of the substrate support assembly. The channels 705 can extend radially outward through the backing plate 445 and then turn in a vertical direction toward the backing plate 415. The hole 610 can provide access to the first recess 612, which can create a channel defined by the top disk 405 from above. Within this channel, one or more holes can be defined along the top disk 405, the one or more holes passing upward through the top disk 405 into an edge region of the top disk 405, such as below the edge ring 520.

[0063] Figure 7B A schematic partial cross-sectional view of an exemplary substrate support assembly according to an embodiment of the present technology is shown. The cross section may be as shown in FIG. Figure 6The straight-through line B shown, for example, can provide an illustration of the hole 615 of the backing plate 600 and the second recess 616. As shown, the backing plate 445 can define one or more additional channels 705 for conveying the purge gas from a central region of the substrate support assembly (such as a rod) outward to the exterior of the substrate support assembly. The channel 705 can extend radially outward through the backing plate 445 and then turn in a vertical direction toward the backing plate 415. The hole 615 can provide access to the second recess 616, which can create a channel defined from above by the top disk 405. Within this channel, one or more holes can be defined along the top disk 405, which one or more holes pass upward through the top disk 405 and enter one or more interior regions of the recursive path of the top disk 405 through the second recess 616. The holes can be defined through the top disk 405 in multiple locations (such as along a radial portion of the second recess 616 and along paths 618 and 620). For example, exemplary holes 715, 716 are at Figure 7C It is shown in Figure 7C Schematic partial cross-sectional views of exemplary substrate support assemblies according to embodiments of the present technology are shown along alternative lines or cross-sections. As shown, hole 715 can be located along second recess 616, while hole 716 can be located within path 618. It should be understood that the exemplary hole patterns discussed are for illustration only, and that various hole patterns (including backing plate configurations) implemented by the present technology are also contemplated.

[0064] Figure 8 A schematic partial cross-sectional view of an exemplary substrate support assembly 800 according to an embodiment of the present technology is shown. The substrate support assembly 800 can be similar to the substrate support assembly 400 or the pedestal 265 previously discussed, and can include some or all of the features discussed above using these structures. The substrate support assembly 800 can include a top disk 805. Coupled to the top disk 805 can be a plurality of heaters 815. The heaters 815 can be resistive heaters or fluid channels through which a temperature-controlled fluid flows. In embodiments such as those shown, the heaters 815 can be resistive heaters extending across the rear surface of the top disk 805. The cooling plate 820 can be coupled to the plurality of heaters 815 at the top surface 822 of the cooling plate. The cooling plate 820 can also define one or more channels 825 that are configured to distribute the temperature-controlled fluid through the cooling plate.

[0065] The insulator 830 can be coupled to a second surface 824 of the cooling plate 820 opposite the top surface 822. The insulator 830 can be or include ceramic in an embodiment, and the top disk 805 can also be or include ceramic in an embodiment. In an embodiment, the cooling plate 820 and the backing plate 835 can be or include aluminum, including treated or coated aluminum as previously described. The backing plate 835 can be coupled below the insulator 830. The backing plate 835, the insulator 830, and the cooling plate 820 can be coupled to each other, and can be directly coupled together in an embodiment. The couplings can each define at least a portion of at least one channel 840 through the structure, and the channel 840 can provide access for the lifting pin 842. The lifting pin 842 can be configured to rise through the channel 840 and through the top disk 805 to lift and lower the substrate. The cooling plate 820 can define a recessed ledge 827 extending from the top surface 822 to the radial edge of the cooling plate 820. The recessed ledge 827 can extend past the radial edge of the top disk 805.

[0066] The edge ring 845 can be positioned around the exterior of the cooling plate 820 on the recessed ledge 827. The edge ring 845 can include a top surface 846 extending from a body of the edge ring 845 seated on the recessed ledge 827. The top surface 846 can define a lip 847 extending radially or horizontally on an outer radius of the top disk 805 and can be characterized by a beveled or chamfered edge extending toward the top disk 805. In an embodiment, the lip 847 can not contact the top disk 805 and can provide a space between the components that is configured to allow purge gas to pass between the lip 847 and the top disk 805. The edge ring 845 can also include a sidewall 848 extending from a body of the edge ring 845 seated on the recessed ledge 827. The sidewall 848 can define an extension 849 that extends vertically around the insulator 830 and the backing plate 835. The extension 849 may not contact the insulator 830 or the backing plate 835, and may provide a space between the components configured to allow the purge gas to pass between the extension 849 and the insulator 830 and the backing plate 835. In an embodiment, the extension 849 may extend to the base thickness of the backing plate 835, and may extend slightly above or below the backing plate 835 to limit or prevent particle accumulation on the stacked components.

[0067] In various configurations, heater 815 can include multiple heaters across the back of top disk 805. For example, heater 815 can include multiple polymers or printed heaters, extending radially outward along top disk 805 to produce multiple radial zones across top disk 805. For example, a central heater of a circular pattern can be placed or printed at a central position below top disk 805. Additional heaters with annular shapes can be placed around the central heater, and any number of heaters extending outward can be included, including greater than or about 2 heaters, greater than or about 3 heaters, greater than or about 4 heaters, greater than or about 5 heaters, greater than or about 6 heaters, greater than or about 7 heaters, or more. The heater can include adjustable resistance, which can allow the heater to be independently controlled and operated at different temperatures. Each heater can operate at any temperature previously described, and as previously described, the heater can be maintained at a temperature difference.

[0068] Steering Fig. 9 , Fig. 9 An additional schematic partial cross-sectional view of an exemplary substrate support assembly 800 is shown in accordance with embodiments of the present technology. Fig. 9 A cross-sectional view is shown with the edge ring 845 removed. As shown, it can be seen that the top disk 805 includes a recessed ledge 907 over which a lip 847 of the edge ring 845 can extend. A recessed ledge 909 can also be defined along the top surface of the cooling plate 820 at the radial edge of the top disk 805. As shown, the recessed ledge 909 can extend radially inward along the cooling plate 820 and extend less than half the distance of the recessed ledge 907 below the top disk 805. In some embodiments, the recessed ledge 909 can extend less than or about 40% of the radially inward distance of the recessed ledge 907, and can extend less than or about 30%, less than or about 20%, less than or about 10%, less than or about 5%, or less.

[0069] The recessed ledge 909 can at least partially define a channel 910 that is defined from below by the top surface 822 of the cooling plate 820. The channel 910 can extend below the outer edge of the top disk 805, such as extending within the recessed ledge 909, and the channel 910 can be configured to position an elastomeric element or O-ring between the top disk and the cooling plate. As described above, the cooling plate 820, the insulator 830, and the backing plate 835 can be directly coupled together, which can reduce or eliminate particle distribution between the components. The top disk 805 can be coupled separately from the structure, and the elastomeric element positioned between the top disk 805 and the cooling plate 820 and within the channel 910 as shown can limit or prevent any particle distribution between the top disk and the other components.

[0070] In the foregoing description, for the purpose of explanation, many details have been set forth in order to provide an understanding of various embodiments of the present technology. However, it will be apparent to those skilled in the art that certain embodiments may be practiced without some of these details or with additional details.

[0071] Several embodiments have been disclosed, and those skilled in the art will appreciate that a variety of modifications, alternative configurations, and equivalents may be used without departing from the spirit of the embodiments. In addition, many well-known processes and elements have not been described in order to avoid unnecessarily obscuring the present technology. Therefore, the above description should not be considered to limit the scope of the present technology.

[0072] Where a range of values ​​is provided, it is understood that, unless the context clearly dictates otherwise, each intermediate value between the upper and lower limits of the range, particularly the smallest fraction of the lower limit unit, is also specifically disclosed. Any narrower range between any stated value or unstated intermediate value in the stated range and any other stated value or intermediate value in the stated range are covered. The upper and lower limits of these smaller ranges may be independently included in or excluded from the range, and each range in which any limit, no limit, or both limits are included in the smaller range is also covered in the present technology, subject to any specifically excluded limits in the stated range. Where the stated range includes one or both of the limits, ranges excluding any one or both of the included limits are also included.

[0073] As used herein and in the appended claims, the singular forms "a," "an," and "the" include plural references unless the context clearly dictates otherwise. Thus, for example, reference to "a layer" includes a plurality of such layers and reference to "the precursor" includes reference to one or more precursors and equivalents thereof known to those skilled in the art, and so forth.

[0074] Furthermore, when used in this specification and the appended claims, the words “comprise(s)”, “comprising”, “contain(s)”, “containing”, “include(s)” and “including” are intended to specify the presence of stated features, integers, components, or operations, but they do not preclude the presence or addition of one or more other features, integers, components, operations, acts, or groups.

Claims

1. A substrate support assembly, comprising: a top disk characterized by a first surface and a second surface opposite the first surface, wherein the top disk defines a thermal break between an inner region and an outer region of the top disk, and wherein the thermal break comprises a groove defined about an inner radius of the top disk, the groove extending from the first surface of the top disk into the disk; a backing plate coupled to the second surface of the top disk, wherein the backing plate defines a recessed portion vertically aligned with the grooves defined by the top disk, the backing plate being configured to at least partially define a flow channel with the top disk and provide a passage for delivering a purge gas through the top disk; a cooling plate, the cooling plate being coupled to the backing plate; a heater coupled between the cooling plate and the backing plate; as well as A backing plate is coupled to the backing plate around an exterior of the backing plate, wherein the backing plate at least partially defines a volume, and wherein the heater and the cooling plate are contained within the volume.

2. The substrate support assembly of claim 1 , wherein the thermal break comprises a first groove defined at the first surface of the top disk around an inner radius of the top disk, and a second groove defined at the second surface of the top disk opposite the first surface around a second inner radius of the top disk.

3. The substrate support assembly of claim 2, wherein at least one of the first groove and the second groove extends discontinuously around the top disk.

4. The substrate support assembly of claim 1, wherein the cooling plate defines at least one channel within the cooling plate, the at least one channel configured to distribute fluid delivered from the central port within the cooling plate.

5. The substrate support assembly of claim 1, wherein the heater comprises a first heater coupled to the backing plate at a first position, and a second heater coupled to the backing plate at a second position radially outward from the first position.

6. The substrate support assembly of claim 5, wherein the cooling plate and the backing plate define a gap radially between the first heater and the second heater, and wherein the second heater extends to a radial edge of a top surface of the cooling plate.

7. The substrate support assembly of claim 6, wherein the first heater and the second heater are configured to operate independently of each other, and wherein the first heater and the second heater are configured to maintain a temperature uniformity of + / - 0.5°C across a substrate on the substrate support assembly.

8. The substrate support assembly of claim 1, wherein the top disk comprises aluminum.

9. The substrate support assembly of claim 1, wherein the heater comprises a polymer heater.

10. The substrate support assembly of claim 1, wherein the top disk defines at least one concave ledge around an outer radius of the top disk.

11. The substrate support assembly of claim 10, further comprising an edge ring extending around the top disk along the recessed ledge, wherein the edge ring extends vertically above a top plane of the top disk.

12. The substrate support assembly of claim 11, wherein the edge ring is characterized by an outer diameter equal to an outer diameter of the top disk.

13. The substrate support assembly of claim 11, wherein the top disk defines a plurality of recesses, and wherein the edge ring is configured to seat on ceramic pins located within the plurality of recesses.

14. The substrate support assembly of claim 13, wherein the edge ring rests on the ceramic pins without contacting the top disk.

15. A substrate support assembly comprising: a top disk characterized by a first surface and a second surface opposite the first surface, wherein a thermal break including a groove is defined to extend from the second surface of the top disk without extending through the first surface of the top disk; a backing plate coupled to the top disk, wherein the backing plate defines a recess vertically aligned with the groove defined in the top disk, the backing plate being configured to at least partially define a flow channel with the top disk and provide a passage for delivering a purge gas through the top disk; a plurality of heaters coupled to the top disk, wherein the heaters include a resistive heater extending across a rear surface of the top disk; a cooling plate coupled to the plurality of heaters at a first surface of the cooling plate, wherein the cooling plate defines a channel configured to distribute a temperature-controlled fluid through the cooling plate; as well as An insulator is coupled to a second surface of the cooling plate opposite the first surface.

16. The substrate support assembly of claim 15, wherein the top disk and the insulator comprise ceramic.

17. The substrate support assembly of claim 15, wherein the plurality of heaters comprises at least four printed heaters, and wherein at least three of the four printed heaters are characterized by an annular shape.

18. The substrate support assembly of claim 15, wherein the top disk and the cooling plate define a channel extending below an outer edge of the top disk, and wherein the channel is configured to seat an elastomeric element.

19. The substrate support assembly of claim 15, wherein the top disk defines at least one concave ledge around an outer radius of the top disk, and the substrate support assembly further comprises an edge ring positioned along the concave ledge around an exterior of the cooling plate.

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