Electrically injected silicon-based III-V group edge-emitting nanowire laser and its preparation method

A III-V and nanowire technology, applied in the field of optoelectronics, can solve problems such as easy leakage of photons, absence of optical modes, breakage of III-V nanowires, etc., to achieve the effect of facilitating coupling and preventing leakage

CN109638648BActive Publication Date: 2020-05-19INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Publication Date
2020-05-19

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Abstract

The invention discloses a preparation method for an electric injection silicon-based III-V group edge-emitting nanowire lase, and the method comprises the following steps: depositing a silicon dioxidelayer on an SOI substrate, and etching a rectangular groove on the silicon dioxide layer; corroding a v-shaped groove in the top silicon of the SOI substrate below the rectangular groove, and enabling the v-shaped groove to be communicated with the rectangular groove to form a communicating groove; growing an epitaxial structure of the silicon-based III-V group edge emitting nanowire laser in thecommunicating groove; preparing a metal electrode pattern on the silicon-based III-V group edge emitting nanowire laser. According to the invention, the electric injection technological method for epitaxially growing a III-V group nanowire material on the SOI substrate, and meanwhile, a prepared electrode can be used for testing the dynamic characteristics of the silicon-based III-V group edge-emitting nanowire laser.
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Description

Technical field

[0001] The invention relates to the technical field of optoelectronics, in particular to an electrically injected silicon-based III-V group edge-emitting nanowire laser and a preparation method thereof. Background technique

[0002] Since the birth of the first integrated circuit, integrated circuit technology has maintained an ultra-high-speed development, and MOSFET devices with silicon as a substrate have become the core and foundation of modern integrated circuit technology. As the feature size of devices continues to shrink, integrated circuit technology is limited by a series of basic physical issues and process technology in terms of speed, power consumption, integration, and reliability. In order to achieve greater storage capacity and higher transmission speed, the traditional communication technology that uses electrons as information transmission carriers can no longer meet the needs of practical applications, and it has become a mainstream development ...

Examples

preparation example Construction

[0055] According to an embodiment of the present invention, there is provided a method for preparing an electrically implanted silicon-based III-V group edge-emitting nanowire laser, including:

[0056] Depositing a silicon dioxide layer on the SOI substrate, and etching rectangular trenches on the silicon dioxide layer;

[0057] Etching a v-shaped groove in the top silicon of the SOI substrate under the rectangular groove to communicate with the rectangular groove to form a connecting groove;

[0058] Growing a silicon-based III-V family side-emitting nanowire laser epitaxial structure in the connecting trench;

[0059] A metal electrode is prepared on the silicon-based III-V group side-emitting nanowire laser.

[0060] The invention provides a process method for realizing electrical injection for III-V family nanowire materials epitaxially on an SOI substrate, and the prepared electrode can be used to test the dynamic characteristics of silicon-based III-V family side-emitting nanowir...