Ceramic hybrid insulator board

Abstract

The present disclosure generally relates to an electrostatic chuck for processing a substrate. The electrostatic chuck includes: a facility plate; and an insulator disposed between a cooling base and a ground plate. A support body is coupled to the cooling base for supporting a substrate on the support body. A ring is configured to surround the insulator. The ring is formed of a material that is resistant to degradation due to exposure to a manufacturing process. The ring optionally includes an extension configured to surround the facility plate.

Description

Technical Field

[0001] Embodiments of the present disclosure generally relate to electrostatic chucks for processing substrates. Background Art

[0002] In the manufacture of integrated circuits, films of various materials are deposited on semiconductor substrates using deposition processes such as chemical vapor deposition (CVD) or atomic layer deposition (ALD). In other operations, layer modification processes such as etching are used to expose portions of the deposited layers for further deposition. Typically, these deposition or etching processes are used in a repetitive manner to manufacture various layers of electronic devices such as semiconductor devices.

[0003] As technology advances, new chemicals and processes are being utilized to fabricate increasingly complex circuits and semiconductor devices. These chemicals and processes can damage conventional components used in process chambers.

[0004] Therefore, there is a need for chamber processing components for device fabrication that can be used with new fabrication processes. Summary of the invention

[0005] The present disclosure generally relates to an electrostatic chuck for processing a substrate.

[0006] In one embodiment, a process chamber has a body having sidewalls and a bottom. A cover is coupled to the body to define a process volume in the body. An electrostatic chuck is disposed in the process volume. The electrostatic chuck has a ground plate, an insulator, a facility plate, a cooling base, and a support body. An electrode is disposed in the support body. A ceramic ring is disposed around the insulator.

[0007] In another embodiment, an electrostatic chuck has a ground plate, an insulator, a facility plate, a cooling base, and a support body. An electrode is disposed within the support body. The electrostatic chuck also has a ring disposed around the insulator. The ring is formed of a ceramic material.

[0008] In yet another embodiment, an electrostatic chuck has a ground plate, an insulator, a facility plate, a cooling base, and a support body. An electrode is disposed within the support body. The electrostatic chuck further includes a ring having an annular portion and an extension extending from the annular portion. The annular portion surrounds the insulator, and the extension surrounds the facility plate. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] In order to be able to understand in detail the manner in which the above-mentioned features of the present disclosure are achieved, a more specific description of the present disclosure briefly outlined above may be obtained by reference to embodiments, some of which are illustrated in the accompanying drawings. It should be noted, however, that the drawings illustrate only exemplary embodiments and are therefore not to be considered as limiting the scope of the embodiments, as the present disclosure may allow for other equally effective embodiments.

[0010] Figure 1 is a schematic arrangement of a cross section of an exemplary processing chamber.

[0011] Figure 2 is a schematic arrangement of a cross section of an electrostatic chuck according to one embodiment.

[0012] Figure 3 is a schematic arrangement of a cross section of an electrostatic chuck according to another embodiment.

[0013] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation. DETAILED DESCRIPTION

[0014] The present disclosure generally relates to an electrostatic chuck for processing a substrate. The electrostatic chuck includes: a facility plate; and an insulator disposed between a cooling base and a ground plate. A support body is coupled to the cooling base for supporting a substrate on the support body. A ring is configured to surround the insulator. The ring is formed of a material that is resistant to degradation due to exposure to a manufacturing process. The ring optionally includes an extension configured to surround the facility plate.

[0015] Figure 1 1 is a schematic arrangement of a partial cross-section of an exemplary process chamber 100 according to one embodiment. The process chamber 100 includes a body 102 having a sidewall 104 and a bottom 106. A lid 108 is coupled to the body 102 to define a process volume 110 in the body 102. The body 102 is generally formed of a metal such as aluminum or stainless steel, but any material suitable for use with the process performed in the process chamber 100 may be utilized.

[0016] The faceplate 136 is coupled to the cover 108. A plurality of apertures 150 are formed through the faceplate 136 and are in fluid communication with the process volume 110 through openings 146 formed in the cover 108. The cover plate 132 is coupled to the faceplate 136 to define a plenum 148 therebetween. Gas flows from the gas faceplate 140 into the plenum 148 through inlets 160 formed in the cover plate 132. Gas flows from the plenum 148 into the process volume 110 through the apertures 150 in the faceplate 136.

[0017] An electrostatic chuck 115 supported by the bottom 106 is disposed within the process volume 110 for supporting a substrate W on the electrostatic chuck 115. The electrostatic chuck 115 includes a support body 114 coupled to the base 116. A plurality of lift pins 122 are optionally disposed through an opening 121 formed in the electrostatic chuck 115. The lift pins 122 are coupled to an actuator 120 for raising and lowering the lift pins 122 to position the substrate "W" on the support body 114. A vacuum system (not shown) is fluidly coupled to the process volume 110 through the opening 130 to evacuate effluent from the process volume 110.

[0018] To facilitate processing of the substrate W in the process chamber 100, the substrate W is disposed on the support body 114. An electrode 126 is disposed within the support body 114 and electrically coupled to a power source 128 through the base 116. The electrode 126 is selectively biased by the power source 128 to generate an electromagnetic field to electrostatically attract the substrate W to the support body 114. In certain embodiments, the electrode 126 is a heating electrode capable of increasing the temperature of the support body 114 and the substrate W supported on the support body 114.

[0019] Figure 2 is a cross-section of an exemplary electrostatic chuck 200. The electrostatic chuck 200 may be used as Figure 1 The electrostatic chuck 115. Figure 2 2, the opening 121 and the lifting pins 122 are not shown for clarity. The electrostatic chuck 200 has a ground plate 202, an insulator 204, a facility plate 206, and a cooling base 208, which supports a support body 214. The ground plate 202 is generally formed of a metal such as aluminum and is configured to be coupled to the bottom of the chamber. The ground plate 202 includes holes (not shown) for a coupling mechanism (e.g., screws or bolts) for fixing other parts of the electrostatic chuck 200 (such as the insulator 204, the facility plate 206, and the cooling base 208) to the ground plate 202.

[0020] The insulator 204 is formed of a polymer material such as Polymers (cross-linked polystyrene), polytetrafluoroethylene (PTFE), polyimide (PAI), polyetheretherketone (PEEK), and polyetherimide, etc. The insulator 204 is used to reduce thermal and electrical interactions between the support body 214 having the electrode 226 therein and the ground plate 202. The facility plate 206 is coupled to the insulator 204 and provides a path (i.e., electrical and / or fluid conduits) for connection to the cooling base 208 and the support body 214. The facility plate 206 is also formed of a metal (such as aluminum or stainless steel).

[0021] The cooling base 208 is coupled to the facility plate 206. The cooling base 208 includes a temperature control device 210 disposed therein for controlling the temperature of a support body 214 coupled to the cooling base 208. Here, the temperature control device 210 is a series of channels 210a for allowing a fluid (such as water, air, nitrogen, ethylene glycol, etc.) to flow therethrough. The channels 210a are coupled to a heat exchange device (not shown) for controlling the temperature of the fluid. A seal 220 is disposed around the periphery of the cooling base 208. Here, the seal 220 is an O-ring disposed in a groove formed in the cooling base 208. However, other types of devices may be used for the seal 220. The seal 220 is used to prevent the fluid from passing between the cooling base 208 and the facility plate 206.

[0022] The ring 230 is disposed between the facility plate 206 and the ground plate 202 to surround the insulator 204. The ring 230 is formed of a material that resists degradation due to exposure to the manufacturing process, such as a ceramic, such as alumina or yttrium oxide, etc. In another example, the ring 230 is formed of quartz. The ring 230 has a radially outward face 230b, and the radially outward face 230b is sized to fit within a groove 202a formed in the ground plate 202. The ring 230 also has a radially inward surface 230a, and the radially inward surface 230a has a diameter that is slightly larger than the outer diameter of the insulator 204. Therefore, an opening is formed through the ring 230, and the insulator 204 is disposed in the ring 230. In one embodiment, the thickness of the ring 230 is substantially equal to the thickness of the insulator 204.

[0023] The seal 222 is disposed between the ring 230 and the facility plate 206 to prevent fluid from passing between the ring 230 and the facility plate 206. Similarly, the seal 224 is disposed between the ring 230 and the ground plate 202. Here, the seals 222, 224 are O-rings disposed in grooves. However, other types of devices may be used for the seals 222, 224. The ring 230 and the seals 222, 224 isolate the insulator 204 from manufacturing processes that may damage the insulator 204, thereby extending the maintenance life of the insulator 204 and increasing the production yield of the chamber.

[0024] Figure 3 300. The electrostatic chuck 300 is similar to the electrostatic chuck 200, but uses a different ring 330 and facility plate 306. The electrostatic chuck 300 also has a cooling base 308, a facility plate 306, and an insulator 302 disposed on a ground plate 302. A support body 314 is coupled to the cooling base 308. The cooling base 308 includes a channel 310a as part of a temperature control device 310 for flowing a fluid in the channel 310a to control the temperature of the support body 314.

[0025] The ring 330 is disposed between the cooling base 308 and the ground plate 302. The ring 330 is formed of a material that is resistant to degradation caused by exposure to the manufacturing process. Exemplary materials include ceramics (such as aluminum oxide, yttrium oxide, etc.) or quartz. In this embodiment, the ring 330 has an annular portion 330a and an extension 330b. The annular portion 330a is coupled to the ground plate 302 at a lower surface 332. The annular portion 330a has a radially outward surface 330c, and the radially outward surface 330c is sized to be disposed in a groove 302a formed in the ground plate 302. The annular portion 330a also has a radially inward surface 330d, and the radially inward surface 330d defines an opening through the annular portion 330a. The radially inward surface 330d has a diameter slightly larger than the outer diameter of the insulator 304, so the insulator 304 can be disposed in the opening. In one embodiment, the thickness of the insulator 304 is substantially equal to the thickness of the annular portion 330a.

[0026] The extension 330b extends from the upper surface 334 of the annular portion 330a. The extension 330b has a radially outward surface 330f, which has a diameter smaller than the diameter of the radially outward surface 330c of the annular portion 330a. The extension 330b also has a radially inward surface 330g, which has a diameter larger than the diameter of the radially inward surface 330d of the annular portion 330a. Therefore, a shoulder 336 is formed between the annular portion 330a and the extension 330b. A portion of the facility plate 306 is disposed on the shoulder 336, wherein the extension 330b surrounds the facility plate 306. In one example, the extension 330b has a thickness substantially equal to the thickness of the facility plate 306. The cooling base 308 is coupled to the extension 330b at its end opposite to the annular portion 330a.

[0027] The seal 320 is arranged between the extension 330b and the cooling base 308 to prevent the fluid from passing therebetween. Similarly, the seal 324 is arranged between the annular portion 330a and the grounding plate 302. Here, the seals 320, 324 are O-rings arranged in the groove, but other devices can also be used. The ring 330 and the seals 320, 324 isolate the insulator 304 and the facility plate 306 from the manufacturing process. The materials used to form the insulator 304 and the facility plate 306 are prone to degradation due to exposure to the manufacturing process. However, the ring 330 and the seals 320, 324 protect the insulator 304 and the facility plate 306 from degradation, thereby extending the manufacturing life. In addition, the use of the extension 330b eliminates the need for the seal between the facility plate 306 and the ring 330. By eliminating the seal, the potential exposure of the facility plate 306 and the insulator 304 to the manufacturing process is further reduced, thereby increasing the protection of the facility plate 306 and the insulator 304.

[0028] During operation, the electrode 326 applies a clamping force to the substrate W ( Figure 1 ). In conventional designs, the insulator 304 and facility plate 306 absorb the reaction forces to the clamping force and the vacuum forces present in the chamber. Over time, repeated absorption can fatigue the insulator 304 and facility plate 306, which can cause damage to these components, such as cracking them. However, by utilizing the embodiments described herein, the ring 330 (rather than the insulator 304 and facility plate 306) absorbs the forces applied to the electrostatic chuck 300 by the clamping electrode 326. Therefore, the ring 330 prevents the insulator 304 and facility plate 306 from being damaged by the clamping force and the vacuum force, and extends the life of the insulator 304 and facility plate 306.

[0029] In one example, the dielectric properties of the electrostatic chucks 200, 300 are configured to provide sufficient clamping force to the substrate W ( Figure 1 ). For example, the amount of ceramic material (i.e., ring 230, 330) and polymer material (i.e., facility plate 206, 306 and insulator 204, 304) changes the capacitance of the electrostatic chuck 200, 300. The sizing of the ring 230, 330, facility plate 206, 306, and insulator 204, 304 is selected to provide a desired capacitance of the electrostatic chuck 200, 300. Figure 3 In one example shown in FIG. 3 , facility plate 306 has cutouts 350 sized to increase or decrease the capacitance of electrostatic chuck 300 as desired. The size and arrangement of cutouts 350 are selected to obtain a desired capacitance.

[0030] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope of the disclosure is determined by the claims that follow.

Claims

1. A process chamber, comprising: a body having side walls and a bottom; a cover coupled to the body to define a process volume within the body; as well as An electrostatic chuck, the electrostatic chuck being disposed in the process volume, the electrostatic chuck comprising: Ground plate; an insulator, the insulator being arranged on the ground plate; a facility plate disposed on the insulator; a cooling base disposed on the facility plate; a support body disposed on the cooling base, the support body having an electrode therein; and A ring is disposed around the insulator, wherein the ring is formed of a ceramic material, the ring includes an annular portion, the thickness of the annular portion is equal to the thickness of the insulator and is coupled to the ground plate at a lower surface. 2 . The process chamber of claim 1 , wherein the ring has an inner surface defining an opening through the ring, wherein the insulator is disposed in the opening.

3. The process chamber of claim 1, wherein the ring further comprises an extension. 4 . The process chamber of claim 3 , wherein the insulator is surrounded by the annular portion, and the facility plate is surrounded by the extension. The process chamber of claim 1 , wherein the insulator is formed of a polymer material.

6. The process chamber of claim 1, wherein the ring is formed of aluminum oxide or yttrium oxide.

7. An electrostatic chuck, comprising: Ground plate; an insulator, the insulator being arranged on the ground plate; a facility plate disposed on the insulator; a cooling base disposed on the facility plate; A support body, the support body is arranged on the cooling base, and the support body has an electrode; as well as A ring is disposed around the insulator, wherein the ring is formed of a ceramic material, the ring includes an annular portion, the thickness of the annular portion is equal to the thickness of the insulator and is coupled to the ground plate at a lower surface.

8. The electrostatic chuck of claim 7, further comprising: a first seal disposed between the ring and the facility plate; as well as A second seal is disposed between the ring and the ground plate.

9. The electrostatic chuck of claim 8, wherein the first seal, the second seal, and the ring isolate the insulator disposed within the ring.

10. The electrostatic chuck of claim 7, wherein the ring has a radially inward surface defining an opening through the ring, and wherein the insulator is disposed within the opening.

11. The electrostatic chuck of claim 7, wherein the insulator is formed of a polymer material.

12. The electrostatic chuck of claim 7, wherein the ring is formed of aluminum oxide or yttrium oxide.

13. An electrostatic chuck, comprising: Ground plate; an insulator, the insulator being arranged on the ground plate; a facility plate disposed on the insulator; a cooling base disposed on the facility plate; A support body, the support body is arranged on the cooling base, and the support body has an electrode; as well as A ring, comprising: an annular portion, the annular portion surrounding the insulator, the annular portion having a thickness equal to that of the insulator and coupled to the ground plate at a lower surface; as well as An extension extends from the annular portion, wherein the extension surrounds the facility panel.

14. The electrostatic chuck of claim 13, further comprising: a first seal disposed between the ring and the cooling base; as well as A second seal is disposed between the ring and the ground plate.

15. The electrostatic chuck of claim 14, wherein the first seal, the second seal, and the ring isolate the insulator and the facility plate disposed within the ring.

16. The electrostatic chuck of claim 13, wherein the annular portion has a radially inward surface defining an opening through the annulus, and wherein the insulator is disposed within the opening.

17. The electrostatic chuck of claim 13, wherein the extension has a radially inward surface configured to surround the facility plate.

18. The electrostatic chuck of claim 17, wherein a shoulder is formed between the annular portion and the extension, wherein a portion of the facility plate is disposed on the shoulder.

19. The electrostatic chuck of claim 13, wherein the insulator is formed of a polymer material.

20. The electrostatic chuck of claim 13, wherein the ring is formed of aluminum oxide or yttrium oxide.

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