Component carrier carrying electronic components and method of manufacturing component carrier

Abstract

Component carrier carrying electronic components and method of manufacturing a component carrier. The component carrier comprises: an at least partially electrically insulating core; at least one electronic component embedded in the core; and a coupling structure having at least one electrically conductive through connection extending at least partially through the coupling structure and having a component contact end and a wiring contact end, wherein the at least one electronic component is in direct electrical contact with the component contact end, wherein at least an outer surface portion of the coupling structure has uniform ablation properties and is patterned to have surface recesses filled with an electrically conductive wiring structure, and wherein the wiring contact end is in direct electrical contact with the wiring structure, and wherein the at least one electrically conductive through connection comprises at least one post.

Description

[0001] This application is a divisional application of the Chinese patent application No. 201580076115.1, filed on December 16, 2015, with the title "Embedding electronic components by wire structure contact in surface portions of a component carrier having uniform erosion characteristics". TECHNICAL FIELD

[0002] The present invention relates to a component carrier and a method of manufacturing a component carrier. BACKGROUND

[0003] In the context of increasing product functionality of component carriers equipped with one or more embedded electronic components and the increasing miniaturization of such electronic components and the increasing number of electronic components to be mounted on and / or in a component carrier, such as a printed circuit board, more powerful array-like components or packages with several electronic components are increasingly employed, which have a plurality of contacts or connections, wherein the spacing between these contacts is continuously decreasing. Thus, contacting embedded electronic components as well as surface mounted electronic components becomes more and more challenging. At the same time, the component carrier should have mechanical robustness in order to be able to operate even under harsh conditions. SUMMARY

[0004] It is an object of the present invention to provide a component carrier with embedded electronic components that can be contacted in a simple and reliable manner.

[0005] In order to achieve the above defined object, a component carrier and a method of manufacturing a component carrier are provided as follows.

[0006] According to an exemplary embodiment of the present invention, a component carrier for carrying electronic components is provided, wherein the component carrier comprises: an at least partially electrically insulating core; at least one electronic component embedded in the core; a coupling structure having at least one electrically conductive through connection extending at least partially through the coupling structure and having a component contact end and a wire contact end; wherein the at least one electronic component is in direct electrical contact with the component contact end; wherein at least an outer surface portion of the coupling structure has uniform erosion characteristics and is patterned to have surface recesses filled with an electrically conductive wire structure; wherein the wire contact end is in direct electrical contact with the wire structure; and wherein the at least one electrically conductive through connection comprises at least one post.

[0007] According to an exemplary embodiment of the present application, a component carrier for carrying electronic components is provided, wherein the component carrier comprises: an at least partially electrically insulating core; at least one electronic component embedded in the core; a coupling structure having at least one electrically conductive through connection at least partially extending through the coupling structure and having a component contact end and a wiring contact end; wherein the at least one electronic component is in direct electrical contact with the component contact end; wherein at least an outer surface portion of the coupling structure has a uniform ablation characteristic and is patterned to have surface recesses filled with an electrically conductive wiring structure; wherein the wiring contact end is in direct electrical contact with the wiring structure, wherein a dielectric material of the coupling structure comprises a matrix and filler particles embedded in the matrix, wherein a material of the matrix and a material of the filler particles together define the uniform ablation characteristic of the outer surface portion of the coupling structure.

[0008] According to an exemplary embodiment of the present application, a component carrier for carrying electronic components is provided, wherein the component carrier comprises: an at least partially electrically insulating core; at least one electronic component embedded in the core; a coupling structure having at least one electrically conductive through connection at least partially extending through the coupling structure and having a component contact end and a wiring contact end; wherein the at least one electronic component is in direct electrical contact with the component contact end; wherein at least an outer surface portion of the coupling structure has a uniform ablation characteristic and is patterned to have surface recesses filled with an electrically conductive wiring structure; wherein the wiring contact end is in direct electrical contact with the wiring structure, and wherein the component carrier comprises at least one of the following features: wherein the coupling structure comprises or consists of a combination of a coupling body and a coupling layer at least partially arranged on the coupling body; wherein there is no redistribution layer at an electrical interface between the at least one electronic component and the at least one through connection; wherein the at least one electronic component and at least a portion of the coupling structure are integrally formed in a semiconductor substrate.

[0009] According to an exemplary embodiment of the present invention, a component carrier for carrying electronic components is provided, wherein the component carrier comprises: a core that is at least partially electrically insulated; at least one electronic component embedded in the core; and a coupling structure having at least one conductive through-connection extending at least partially through the coupling structure and having a component contact end and a wiring contact end, wherein the at least one electronic component is in direct electrical contact with the component contact end (i.e., there are no other components between them), wherein at least an outer surface portion of the coupling structure has uniform etch characteristics and is patterned to have surface recesses filled with conductive wiring structures, and wherein the wiring contact end is in direct electrical contact with the wiring structure (i.e., there are no other components between them).

[0010] According to another exemplary embodiment of the present invention, a method for manufacturing a component carrier for carrying electronic components is provided, wherein the method includes: embedding at least one electronic component in a core that is at least partially electrically insulating; providing a coupling structure having at least one conductive through-connector extending at least partially through the coupling structure and forming a component contact end and a wiring contact end; making the at least one electronic component directly electrically contact the component contact end; providing uniform etch characteristics to at least an outer surface portion of the coupling structure; patterning the outer surface portion to form a surface recess; and filling the surface recess with a conductive wiring structure such that the wiring contact end is directly electrically contacting the wiring structure.

[0011] In the context of this application, the term "coupling structure" can specifically refer to a structure having partial electrical insulation of one or more integrated conductive through-connectors. Such a coupling structure can be configured as a coupling body that is separated from the at least partially electrically insulating core and can be a pre-formed or prefabricated component or intermediate structure for direct contact between the pads (or other electrical contacts) of an electronic component and the outer component carrier surface of the component carrier. In another embodiment, the coupling structure is formed by combining a coupling body of the type described above with a coupling layer that also facilitates the electrical coupling of embedded electronic components.

[0012] In the context of this application, the term "through connector" may specifically refer to a conductive structure that provides electrical contact between a pad (or another electrical contact) of an embedded electronic component and an outer component-carrying surface of a component carrier. The component-carrying surface of the component carrier may be a surface suitable for surface mounting one or more electronic components, such as semiconductor chips. Such a through connector may extend substantially or completely perpendicular to the opposite main surface or component-carrying surface of the component carrier.

[0013] In the context of this application, the term "uniform ablation characteristics" for the outer surface portion of the coupling structure can specifically refer to a situation where, at least in the portion exposed to the environment, the material composition is such that the surface material is composed of a single (particularly dielectric) material or a combination of several dielectric and / or conductive materials, such that when an ablation process is applied to the surface portion, the material can be removed at a constant ablation rate. Such an ablation rate can be a parameter indicating the amount of material removed per unit time during an ablation process (particularly laser ablation or etch ablation). For example, when laser ablation is applied, the application of a laser beam will cause material to be removed from the surface portion of the coupling structure at a uniform or constant ablation rate. Uniform ablation characteristics can be achieved, for example, by forming the surface portion of a single material (such as pure resin), rather than, for example, a mixture of resin and glass fiber. In the latter example of resin and glass fiber, uniform ablation characteristics cannot be achieved because the ablation rate of the glass fiber is significantly lower than that of the resin material.

[0014] According to an exemplary embodiment of the invention, a highly advantageous contact architecture is provided for direct contact with one or more embedded electronic components, based on a coupling structure that allows the component contact ends to be directly attached to one or more pads (or other electrical contacts) of the electronic component (such as a semiconductor chip). A through-connector preferably extends vertically through the coupling structure and serves as a conductive bridge, achieving electrical contact between the electronic component's pads and the wiring structure by contacting the wiring structure at the wiring contact end. By forming the exposed surface portion of the coupling structure with a material having uniform etching properties, a simple etching process allows for the flexible design of any desired wiring structure as an external wiring pattern in the surface portion of the circuit structure to provide contact with the wiring contact end of at least one through-connector (e.g., still embedded). Using this contact architecture, ultrafine wire wiring can be provided when interconnecting one or more embedded electronic components with the outer surface of a component carrier (or with one or more other electronic components surface-mounted on such an outer surface of the component carrier). By using at least one through connector that contacts via a dedicated etching process on the outer surface portion of the coupling structure with uniform etching characteristics, one or more embedded electronic components can be directly contacted without the need for a difficult-to-process redistribution layer. Such component interconnection technology allows for landless or substantially land-saving interconnection between electronic components and component carriers such as patterned layers of printed circuit boards. This advantageously allows for ultra-fine line drawing using slotting / plating processes. Thus, novel first-level interconnections for electronic components can be achieved.

[0015] Other exemplary embodiments of the component carrier and the method of manufacturing the component carrier will be described below.

[0016] In one embodiment, at least the outer surface portion of the coupling structure is made of a fiberglass-free material. Therefore, this surface portion may be neither prepreg nor FR4 (both of which contain fiberglass), where prepreg or FR4 would degrade the desired uniform corrosion resistance of the coupling structure. By making the outer surface portion of the coupling structure a fiberglass-free material, and more particularly by making the entire electrical insulation of the coupling structure a fiberglass-free material, the dimensions of the wiring structure are ensured to be precisely defined and small, unaffected by areas with poor corrosion resistance, spatially varying corrosion resistance, or unclear corrosion resistance.

[0017] In one embodiment, at least the outer surface portion of the coupling structure comprises at least one of the following: pure resin, palladium-doped resin, copper oxide-doped resin, and photoresist. These materials are particularly preferred examples of providing substantially uniform etching properties, while still being compatible with printed circuit board technology and are preferred examples for component carriers.

[0018] Furthermore, when using materials such as palladium-doped resins or copper oxide-doped resins, electroless plating can be selectively and efficiently initiated on these materials (as the initial process for forming wiring structures), effectively suppressing electroless plating of metallic materials on other surface portions of the component carrier. This advantageously eliminates the need for polishing processes.

[0019] In one embodiment, at least one through connector includes at least one post, particularly at least one cylindrical post and / or multiple posts aligned parallel to each other. Such posts may be conductive posts extending through the coupling structure and providing contact between the electronic component and the wiring structure. Specifically, these posts may have a circular cross-section, or alternatively, a polygonal (e.g., rectangular) cross-section. By arranging the posts, for example, in a matrix arrangement, users are provided with a high degree of freedom to design desired wiring structures that mate with at least one embedded electronic component and make contact in a specialized manner via the pattern of the posts.

[0020] In one embodiment, the outer surface of the wiring structure is flush with the outer surface of the outer surface portion of the coupling structure. Correspondingly, the wiring structure can be completely embedded within the surface portion of the coupling structure without protruding beyond it. In other words, the outer surface portion of the wiring pattern and the outer surface portion of the coupling structure can form a common planar surface without significant topological structure, allowing the wiring structure to be structurally integrated into the outer surface portion of the coupling structure without protruding from it. Therefore, the wiring structure is safely protected from damage during use.

[0021] In one embodiment, the component carrier includes at least one additional conductive wiring structure on a main surface of the component carrier, which is opposite to the outer surface portion of the coupling structure and the other main surface of the component carrier where the wiring structure is located. Therefore, both opposite main surfaces of the component carrier can be configured according to the wiring technique of an exemplary embodiment of the invention, wherein the corresponding wiring structures are formed by eroding the material from the corresponding surface portion having uniform erosion characteristics, and then filling the corresponding recesses or grooves with conductive material. Thus, a space-saving and fine-line wiring architecture can be applied to both opposite main surfaces of the component carrier or to only one main surface of the component carrier.

[0022] In one embodiment, the component carrier includes an adhesive structure (particularly a cured or hardened adhesive) at least partially located between the coupling structure and at least one electronic component embedded in the core. Correspondingly, the method may further include: forming a soft adhesive structure between at least one electronic component and at least one component contact end located on the exposed surface of the coupling structure; and joining (particularly pressing) the at least one electronic component and the coupling structure together, thereby squeezing the soft adhesive away from the contact area between the component contact end and the at least one electronic component (particularly away from the protruding pads of the electronic component). The (cured or hardened) adhesive material of the prepared component carrier between the coupling structure and the embedded electronic component can be derived from an advantageous manufacturing process in which the electronic component is adhered to the component carrier surface of the coupling structure by the adhesive material before the electronic component is embedded into the core. The adhesive material can be applied as a layer of soft adhesive between the coupling structure and the electronic component such that after the electronic component and the coupling structure are pressed together, the adhesive material will be squeezed away from the slightly protruding contacts or pads of the electronic component. This ensures proper electronic coupling between the electronic component and at least one through connector, while also providing a robust mechanical connection between the coupling structure and the electronic component to be embedded.

[0023] In one embodiment, at least one of the wiring structure and at least one through-connector comprises at least one of the group consisting of copper, aluminum, and nickel. Copper is particularly preferred due to its full compatibility with printed circuit board technology, in which the component carrier is manufactured according to printed circuit board technology, according to the preferred embodiment. Using only a single metal provides simple manufacturability while avoiding problems inherent in different conductive materials, such as contact resistance effects and different thermal expansion.

[0024] In one embodiment, the dielectric material of the coupling structure includes a matrix and filler particles embedded in the matrix, wherein the materials of both the matrix and the filler particles have uniform etching properties. The use of filler particles has the advantage of allowing precise control over the properties of the coupling structure. For example, such filler particles can affect the thermal conductivity, etching ability, and ability to deposit conductive materials, among other things, on the material of the coupling structure.

[0025] In one embodiment, the filler particles are selected from the group consisting of beads (such as spheres, like glass beads) and organic fibers. In contrast to glass fibers, glass beads or other shaped beads with sufficiently small dimensions do not significantly alter the ablative properties compared to a matrix material (such as resin), while still allowing for improved structural integrity of the component carrier. Furthermore, the organic fibers can be designed to have substantially the same ablative properties as the matrix.

[0026] In one embodiment, the lateral dimension (such as width) of the trace of the wiring structure is narrower than the lateral dimension (such as diameter) of at least one through connector. Since the width of the wiring structure can be defined by an etching process such as mechanical drilling or laser etching, the size of the wiring structure can be very small. Therefore, in this case, the through connector serves as an adaptation structure for adapting the size of the wiring structure to the size of the solder pads of the electronic device. Thus, the connection technology according to an exemplary embodiment of the invention is compatible with very small wiring structures.

[0027] In one embodiment, the lateral dimension (such as width) of the trace of the wiring structure is wider than the lateral dimension (such as diameter) of at least one through connector. In this alternative embodiment, the size of the wiring pattern can even be larger laterally than the size of the through connector. This may be advantageous in embodiments where components mounted on the outer main surface of a component carrier require relatively large wiring structures.

[0028] In one embodiment, at least one through connector has a cylindrical shape with an aspect ratio greater than 1. Specifically, the aspect ratio of the through connector—that is, the ratio between its length in the vertical direction and its diameter in the horizontal direction—can be greater than 1.5 or even greater than 2. Therefore, electronic components that are precisely connected, even deeply embedded or recessed within a component carrier, can be connected via the through connector.

[0029] In one embodiment, the method includes connecting at least one electronic component to a coupling structure before embedding it in the core. Thus, prior to the integral arrangement of the coupling structure, the coupling structure can be electrically and mechanically connected to the electronic component to be embedded, and then the electronic component can be inserted into a recess of a corresponding shape in the core to complete the embedding. Therefore, this technique allows for contact with the embedded electronic component with minimal effort.

[0030] In one embodiment, the method further includes forming surface recesses (to define the wiring structure) by laser drilling. Laser drilling is considered particularly suitable for forming any desired wiring structure, and by simply defining the trajectory of the laser beam along the exposed surface portion of the coupling structure with uniform ablation characteristics, laser drilling can be readily adapted to specific applications. Two opposite main surfaces of the component carrier can be machined simultaneously or sequentially by such laser ablation treatment.

[0031] In another embodiment, the method includes forming surface recesses (for defining wiring structures) by etching, particularly by photolithographic etching, and / or subsequently by a second step using reactive ion etching. According to such an architecture, the surface material can be patterned by etching to define wiring patterns.

[0032] As an alternative, wiring patterns in exposed surface portions with uniform erosion properties can be achieved in another way, such as by mechanical drilling or by embossing.

[0033] In one embodiment, the method further includes: forming at least one receiving volume (such as a blind via) within the core; receiving at least one electronic component (and optionally at least a portion of a contact structure) within the at least one receiving volume; and connecting the core to the at least one electronic component (e.g., by pressing, or alternatively by adhesion). Such receiving volumes can be formed by etching or stamping foils of prepreg material, wherein after etching or stamping, one or more such pre-treated foils can be used to embed electronic components into the corresponding receiving volumes.

[0034] In one embodiment, there is no redistribution layer (RDL) at the interface (i.e., the connection area) between at least one electronic component and at least one through-connector. Therefore, by eliminating the redistribution layer between the electronic component and the coupling structure, a simple connection can be achieved with a compact design. Figure 4 As shown, it may be advantageous for the copper pillars and dielectric (see reference numeral 106) to end at the same level. This can be achieved in a simple manner: after wafer-level copper pillar bump bonding, the wafer can be coated with dielectric and mechanically ground to expose the pillars. This flat component directly contacts the dielectric used for laser grooving.

[0035] In one embodiment, at least one electronic component and at least a portion of the coupling structure are integrally formed, particularly integrally formed, within a semiconductor substrate (such as a silicon wafer). Correspondingly, the method may further include disposing at least one electronic component and at least a portion of the coupling structure as a monolithic integrated structure within a common semiconductor substrate. In other words, at least a portion of the electronic component and the coupling structure can form a common wafer. Therefore, at least one through-connector can directly contact at least one integrated circuit element of the electronic component to be embedded. Both the through-connector and the circuit element can be surrounded by the semiconductor material of the common substrate. Thus, semiconductor technology can be used to form the electronic and mechanical interface between the wiring structure and the integrated circuit element of the electronic component to be embedded.

[0036] In one embodiment, patterning and filling are performed such that the wiring structure is directly electrically connected to at least one wiring contact exposed by the patterning of at least one through connector. Therefore, minimal or substantially minimal footprint connections are possible, thereby simplifying the connection process and resulting in a compact component carrier.

[0037] In one embodiment, surface recesses formed by patterning are filled by electroless deposition (chemical deposition) of a conductive material, followed by current deposition of another conductive material. Thus, a metal layer can be deposited first, followed by current deposition of another metallic material to further (particularly completely) fill the recesses for forming a wiring structure. This combination of the two deposition processes allows for the fabrication of robust and reliable wiring structures.

[0038] In one embodiment, the method includes polishing, in particular by chemical mechanical polishing (CMP), at least the exposed surface of the coupling structure along with the exposed wiring structure after forming the wiring structure by deposition. Following the previously described two-stage wiring structure formation process (particularly by electroless plating and electroplating), it is possible that the correspondingly processed outer surface of the component carrier is non-planar or uneven, and the conductive material is also located in undesirable positions. The chemical mechanical polishing process can ensure planarity while achieving a spatially precisely defined wiring structure.

[0039] In one embodiment, the method includes attaching a conductive mask layer (e.g., a copper film) and a photoresist layer to an outer surface portion of the coupling structure (particularly to an outer coupling layer of the coupling structure). The method may further include patterning the photoresist layer and the conductive mask layer to expose a portion of the outer surface portion of the coupling structure (particularly the surface portion of the coupling structure where a wiring structure is to be formed). Material from the previously exposed portion of the outer surface portion of the coupling structure can then be selectively removed (particularly by laser processing or etching) to expose at least a portion of at least one wiring contact of at least one through-connector. The surface recesses thus formed can then be filled (partially) with a conductive material to form a wiring structure in contact with the exposed at least one wiring contact. Specifically, this formation of the wiring structure can be performed via an electroless deposition process followed by a current deposition process. The material of the coupling layer (e.g., a palladium-doped resin) can be selected such that electroless deposition of the metallic material will occur primarily or only on the exposed surface of the patterned coupling layer (and not, for example, on the photoresist layer). Advantageously, the metal mask layer can be used to apply voltage during the current deposition process.

[0040] Referring again to the previously described embodiment, the method may further include removing the photoresist layer and conductive mask layer after filling. The component carrier can then be manufactured. This process eliminates the need for the chemical mechanical polishing process described above with reference to another embodiment, further simplifying the manufacturing process.

[0041] However, preferably, the component carrier is configured as a circuit board, particularly as one of the groups consisting of a printed circuit board, a substrate, and internal components. Other types of circuit boards may also be implemented.

[0042] In the context of this application, a "printed circuit board" (PCB) can refer to a board (particularly made of a composite of glass fiber and resin) having an electrically insulating core covered by a conductive material and conventionally used to carry one or more electronic components (such as packaged electronic chips, sockets, etc.) to be electrically coupled through the conductive material. More specifically, a PCB may mechanically support and electrically connect electronic components using conductive traces, solder pads, or other features etched from a metal structure laminated on a non-conductive substrate, such as copper foil. A PCB may be single-sided (i.e., having only one of its main surfaces covered by a metal layer, particularly a patterned metal layer), double-sided (i.e., having both of its opposite main surfaces covered by a metal layer, particularly a patterned metal layer), or multilayer (i.e., having one or more metal layers, particularly patterned metal layers, internally). Conductors on different layers may be connected to each other through plated vias, which may be referred to as vias. A PCB may also include one or more electronic components, such as capacitors, resistors, or active devices, embedded in the electrically insulating core.

[0043] In the context of this application, "internal connector" can refer to an electrical interface device that routes between one connector and another. The purpose of an internal connector can be to extend a connection to a wider spacing or to reroute a connection into a different connection. An example of an internal connector can be an electrical interface between an electronic chip (such as an integrated circuit wafer) and a ball grid array (BGA).

[0044] In the context of this application, "substrate" can refer to an object on which electronic components are to be mounted, such as ceramic and / or glass materials.

[0045] In one embodiment, the electrical insulating material of the core comprises at least one of the following: resin, particularly bismaleimide-triazine resin; glass fiber; prepreg; polyimide; liquid crystal polymer; epoxy-based build-up film; and FR4 material. Resin materials can be used as matrix materials that have the desired dielectric properties, are inexpensive, and are well-suited for mass production. Glass fiber can reinforce the circuit board and make it mechanically stable. Furthermore, if desired, glass fiber can introduce anisotropy into the corresponding circuit board. Prepreg is a suitable material for circuit boards because it is already a mixture of resin and glass fiber and can be further processed (and particularly tempered) to transform it into a PCB-type dielectric material. FR4 is a fire-resistant dielectric material for PCBs, which can be adapted to the packaging concept according to the exemplary embodiment.

[0046] Embedded electronic components can specifically refer to any active electronic component (such as an electronic chip, particularly a semiconductor chip) or any passive electronic component (such as a capacitor). Examples of embedded components are data storage devices such as DRAM (or any other memory), microprocessors, filters (which may be configured, for example, as high-pass, low-pass, or band-pass filters, and may be used, for example, for frequency filtering), integrated circuits (such as logic ICs), signal processing components (such as microprocessors), power management components, optoelectronic interface components (e.g., optoelectronic components), voltage converters (such as DC / DC converters or AC / DC converters), cryptographic components, capacitors, inductors, switches (e.g., transistor-based switches), and combinations thereof and other functional electronic components. Attached Figure Description

[0047] The invention will become clear from the embodiments described below, including the aspects and other aspects defined above, and these aspects will be explained with reference to these embodiments.

[0048] The present invention will be described in more detail below with reference to embodiments of the implementation scheme, but the present invention is not limited to these embodiments.

[0049] Figure 1 A cross-sectional view of a component carrier according to an exemplary embodiment of the present invention is shown.

[0050] Figure 2 A cross-sectional view of a component carrier according to another exemplary embodiment of the present invention is shown.

[0051] Figure 3 A cross-sectional view of a component carrier according to yet another exemplary embodiment of the present invention is shown.

[0052] Figures 4 to 7 The structure obtained during the execution of a method for manufacturing a component carrier according to an exemplary embodiment of the present invention is shown.

[0053] Figures 8 to 12 The structure obtained during the execution of a method for manufacturing a component carrier according to another exemplary embodiment of the invention is shown.

[0054] Figure 13 It shows a structure before monolithic integration, consisting of multiple components similar to monolithic integrated units. Figure 4 The wafer shown is a structure obtained through semiconductor processing.

[0055] The illustrations in the accompanying drawings are schematic. In different drawings, similar or equivalent elements are provided with the same reference numerals. Detailed Implementation

[0056] Before describing the exemplary embodiments in further detail with reference to the accompanying drawings, some general considerations on which the development of the exemplary embodiments of the present invention is based will be presented.

[0057] According to an exemplary embodiment, an embedded component with ultra-fine lines and fine-pitch interconnects is provided. Such embedded component packages are particularly suitable for high-voltage applications. The exemplary embodiments of the present invention offer the advantages of providing a simple and efficient interconnect technology to the chip. Small-footprint interconnects to patterned layers on a PCB are made possible. Furthermore, the exemplary embodiments provide ultra-fine line technology utilizing novel slotting and / or plating processes. Additionally, the exemplary embodiments enable first-level interconnects to the chip without requiring a redistribution layer (RDL). Exemplary application areas particularly suitable for the exemplary embodiments are embedded fan-out packages, high-density embedded modules, and high-density substrates (e.g., with <8 μm L / S).

[0058] Figure 1 A cross-sectional view of a component carrier 100 according to an exemplary embodiment of the present invention is shown. Figure 1 In particular, an embodiment is shown having interconnects such as through connectors 108 on copper pillars and copper-filled traces such as wiring structures 110 with laser-grooved grooves.

[0059] More specifically, Figure 1 A plate-shaped component carrier 100 is shown, which is configured to carry electronic components (not shown, such as packaged semiconductor chips) on both of its two opposite main surfaces 118, 120.

[0060] The component carrier 100 includes an electrically insulating core 102. In the illustrated embodiment, the core 102 is formed of three stacked foils. Two lower foils, made of FR4 or prepreg (particularly a combination of resin and glass fiber), are perforated (i.e., through-holes are provided) to define the receiving volume. The upper foils are continuous. The upper foils may also be made of FR4 or prepreg, or may be made of a material with uniform etching properties such as pure resin (which would allow for advantageous formation of the wiring structure 116).

[0061] The electronic component 104, which is implemented here as a semiconductor chip with pads or electrical contacts 160, is housed in the receiving volume and thus embedded in the core 102. Therefore, the electronic component 104 is embedded inside the component carrier 100.

[0062] The coupling body 106 of the component carrier 100 includes a plurality of parallel aligned cylindrical copper pillars as conductive through-connectors 108. These through-connectors extend vertically (and perpendicular to the main surfaces 118, 120) through the dielectric material surrounding the coupling body 106 into which the through-connector 108 is embedded. Each of the through-connectors 108 has two opposite end faces, which respectively constitute a component contact end 112 and a wiring contact end 114. The electrical contacts 160 of the embedded electronic component 104 make direct electrical contact with the component contact end 112, thereby forming a direct conductive connection between the electronic component 104 and the through-connector 108.

[0063] The dielectric outer surface portion of the coupler 106 (i.e., the dielectric material, such as pure resin, at the lower main surface 120 of the coupler 106) has uniformly ablated properties and is patterned to have surface recesses that are filled with conductive wiring structures 110. By patterning (preferably by laser ablation) the exposed dielectric material of the coupler structure 106 and filling the corresponding recesses, any desired design of the wiring structure 110 can be substantially defined. Figure 1 It can be seen that the wiring contact 114 is in direct electrical contact with the wiring structure 110.

[0064] To ensure that the erosion characteristics of the exposed dielectric material of the coupler 106 are uniform or constant across the entire dielectric region of the dielectric material located on the lower main surface 120 of the coupler 106, so as to properly define the wiring structure 110, the outer dielectric surface portion of the coupler 106 is made of pure resin without glass fibers. Alternatively, however, the exposed dielectric material of the coupling structure 106 may comprise a matrix and filler particles embedded in the matrix, provided that the materials of the matrix and filler particles have uniform erosion characteristics. For example, such filler particles may comprise small glass spheres and / or organic fibers.

[0065] Since the outer surface of the wiring structure 110 is flush with the outer surface of the coupler 106 at the lower main surface 120, the lower main surface is flat and therefore not easily damaged during use.

[0066] from Figure 1 It can also be seen that the component carrier 100 includes an additional conductive wiring structure 116 on the upper main surface 118 of the component carrier 100.

[0067] Reference Figure 1 As shown in detail figure 170, the width d of the trace of the wiring structure 110 is smaller than the diameter D of the cylindrical column of the through connector 108.

[0068] according to Figure 1The component carrier 100 allows for ultra-fine wire wiring and provides a simplified manufacturing process for forming interconnects to embedded electronic components 104, such as wafers. Such ultra-fine wire interconnects enable direct-to-chip Level 1 interconnects without the need for redistribution layers (RDLs).

[0069] The interconnects of the chip are formed from copper pillars instead of copper pads. Using this architecture, the ends of the copper pillars can be brought close to the surface of the PCB after embedding, for example, by transfer embedding (which can be implemented according to AT 514074, which is incorporated herein by reference). For transfer embedding according to an exemplary embodiment, one or more coupling structures (e.g., integrally formed with the electronic component to be embedded) can be mounted on a dimensionally stable temporary carrier, and the resulting arrangement can be attached (e.g., by applying pressure, preferably in a vacuum environment) to a copper foil coated with a soft resin (or a conductive wiring structure coated with any other soft adhesive). The soft adhesive can form the coupling layer of the coupling structure (see reference numeral 202). The coupling structure can have copper pillars or any other at least one conductive through-connector integrated therein. However, with this approach, the copper pillars can directly contact the copper foil. After curing, the temporary carrier can be removed. Subsequently, a printed circuit board-like structure can be easily manufactured using prepreg sheets, additional copper structures, etc. By employing the latter approach, at least one partially electrically insulated core can be manufactured. For interconnects fabricated to wiring layers or wiring structures, plated microvias are not required, and therefore the corresponding registration process can be eliminated.

[0070] For example, the wiring pattern constituting the wiring structure 110 can be formed by creating grooves in the non-glass cloth-reinforced dielectric material of the contact structure 106 on the surface of the PCB—where the embedded electronic component 104 is embedded. These grooves can be formed using a laser beam, wherein the laser beam defines the width and depth, allowing the complete pattern to be created using this process. The laser-grooved grooves can open up areas on the copper pillars and will enable electrical contact with the copper pillars in a subsequent plating process.

[0071] Registration of the groove pattern can be achieved through optical registration with the copper pillars of the wafer, allowing the groove to be precisely registered with the copper pillars. When registration with multiple wafers on the panel is required, an adaptive imaging process can be implemented to adapt the image of each individual wafer and its offset and skew to the overall image of the panel. This process enables the laser groove to be properly registered with each wafer and forms the first-level interconnect with the chip.

[0072] Patterning can be accomplished as follows: Electroless plating is performed on the corresponding surfaces of the groove and the PCB (e.g., exposed epoxy), followed by electroplating to fill the groove. Then, chemical mechanical polishing (CMP) can be performed to remove the plated surface copper.

[0073] Before embedding the electronic component 104 into the receiving volume defined by the core 102, the electronic component 104 is connected to a coupling body 106 made of a uniform dielectric material, in which a through connector 108, implemented as parallel aligned copper pillars, is integrated. For this purpose, a recess can be formed in the coupling body 106 to accommodate the electronic component 104 (which can be attached by adhesion). After this connection process of connecting the electronic component 104 and the coupling body 106 to each other, the final arrangement is inserted into the receiving volume of the core 102, and the aforementioned components can be connected by applying pressure. Subsequently, the lower main surface 120 of the component carrier 100 is subjected to laser drilling, wherein the trajectory along which the laser beam (not shown) acts on the surface material of the lower main surface 120 of the component carrier 100 defines the shape of the wiring structure 110. Correspondingly, the upper main surface 118 can be processed to define the wiring structure 116.

[0074] The recesses in the exposed surface portion of the coupler 106 and the recesses in the exposed surface portion of the optional core 102 at the lower main surface 120 can then be filled by a combination of an electroless metal deposition process and a subsequent current deposition process. The thus filled recesses may still have metal protrusions extending beyond the coupler 106, which can be planarized by mechanical chemical polishing (CMP).

[0075] Figure 2 A cross-sectional view of a component carrier 100 according to another exemplary embodiment of the present invention is shown. Figure 2 It shows Figure 1 The modification, in which, during the manufacturing process (compared to) Figures 8 to 12 A thin copper foil is temporarily attached to the outside of the PCB. Figure 2 (Not shown). Furthermore, a CMP-free process can be obtained using a palladium-doped (Pd) dielectric (see reference numerals 202 and 200).

[0076] The copper patterning process can be modified by replacing the use of a non-glass cloth reinforcing material as the coupler 106 (see...). Figure 1 The exposed dielectric material, using according to Figure 2 An additional coupling layer 202 is made of a non-glass cloth reinforcing material of a palladium-doped resin. The coupler 106 is formed together with the coupling layer 202 according to... Figure 2The coupling structure involves laminating thin copper foil (typically 1 μm to 2 μm thick) onto both sides of the PCB during manufacturing. This structure enables processes where only the laser-grooved recesses formed in the coupling layer 202 are plated, eliminating the need for CMP (Chip Motion Processing). Avoiding CMP is advantageous because it is an expensive process requiring thickness tolerances within the micrometer range for very flat PCBs.

[0077] Used to manufacture according to Figure 2 The possible corresponding process flow for component carrier 100 is as follows:

[0078] -Laminate photoresist on a thin outer copper layer

[0079] - Image formation by registering reference points placed on the core layer.

[0080] -Develop with anti-etchant

[0081] -Etched to expose the thin copper foil

[0082] -Remove the exposed resin layer and reduce the thickness of the photoresist through processes such as plasma, RIE, or excimer laser.

[0083] - Perform electroless plating on Pd-doped materials (plating only or essentially only the material).

[0084] -plating

[0085] - Remove the resist and perform a reveal etching on the thin copper foil.

[0086] Such manufacturing methods and, for example Figure 2 The advantage of the corresponding component carrier 100 shown is that a metal mask for laser ablation processes targeting Pd-doped materials is formed using an optical imaging process, and the photoresist protects the metal mask from exposure during the laser ablation process. Due to this configuration, the surface of the photoresist will not be metallized, and only the grooves will be metallized. Furthermore, the thin copper foil used as a mask in the laser ablation process enables electrical interconnections for electroplating processes to be achieved within the grooves.

[0087] For this process, at least the outer surface portion of the coupling layer 202 may comprise the aforementioned palladium-doped resin or alternatively, a copper oxide-doped resin. Figure 2 In this process, not only the exposed surface portion of the coupling layer 202 may include dopants (e.g., palladium). In contrast, the exposed layer 200 on the opposite main surface 118 may also be made of such a material, allowing the corresponding manufacturing method to be applied here as well. Thus, the described manufacturing process and corresponding advantages apply to the exposed dielectric surface portions of the two opposite main surfaces 118, 120.

[0088] Figure 3 A cross-sectional view of a component carrier 100 according to yet another exemplary embodiment of the present invention is shown. Figure 3 The implementation utilizes interconnects made together with grooves in the bare laminate, vias (such as through-connectors 108) to the wafer (such as embedded electronic component 104), instead of using copper pillar interconnects (such as... Figure 1 ).from Figure 3 It can be seen that, Figure 1 and Figure 2 The copper pillars can be replaced by vias filled with conductive material.

[0089] Figures 4 to 7 The structure obtained during a method of manufacturing a component carrier 100 according to an exemplary embodiment of the present invention is shown. Using this method, a structure similar to... Figure 1 The component carrier shown corresponds to component carrier 100.

[0090] Figure 4 An electronic component 104 is shown. This electronic component is a semiconductor chip with solder pads or other types of chip contacts 160, which is to be embedded within a component carrier 100 to be manufactured using a coupling 106. The pre-fabricated coupling 106 includes a pure resin (i.e., fiberglass-free) substrate 402, which has copper pillars as through connectors 108 extending vertically within the substrate 402. The through connector 108 is a cylindrical copper pillar with an exposed component contact end 112 at its top and a wiring contact end 114 at its bottom, which is embedded within the substrate 402. Furthermore, from... Figure 4 It can be seen that a soft, liquid, viscous or flowable adhesive structure 400 is applied to the exposed component contact end 112 of the through connector 108.

[0091] While the adhesive structure 400 is still liquid, the electronic component 104 and the coupler 106 are pressed together with the adhesive structure 400 positioned between them (see arrow 404). This causes the adhesive material of the adhesive structure 400 to flow away at the contact point between the electrical contact 160 and the component contact end 112 of the through connector 108, as the solder pads or electrical contacts 160 of the electronic component slightly protrude over the rest of the component body. The adhesive structure 400 then at least partially hardens or cures to mechanically connect the electronic component 104 and the coupler 106. A direct electrical contact is thus established between the electrical contact 160 and the through connector 108.

[0092] Generate based on Figure 4Another method for constructing the structure involves plating copper pillars 400 onto contact pads 160 located on the wafer, and in a next step, coating that side of the wafer with a polymer material (forming part of the coupling structure 106) and allowing it to cure. In the next step (not shown), the wafer can be diced. Figure 4 The single structure shown is called a wafer.

[0093] from Figure 5 It can be seen that, then according to Figure 4 The formed arrangement is inserted into the receiving volume formed in the core 102. The core 102 may be assembled from multiple stacked pretreated prepreg foils or other suitable materials (preferably, the material of the core 102 has uniform etch-resistant properties, for example, provided by pure resin, at least at and near the opposite main surfaces 118, 120, as described in further detail below). The insertion process is performed such that the electronic component 104 is embedded in the material of the core 102 and the material of the coupling body 106. As indicated by arrow 500, the components in the aforementioned structure are then joined together by applying mechanical pressure—accompanied by a supply of heat, if desired or necessary.

[0094] Therefore, a receiving volume for accommodating the electronic component 104 is formed within the core 102, and the core 102 is connected to the electronic component 104 by pressing. The method further includes: embedding the electronic component 104 in the electrically insulating core 102; providing a coupling body 106 having a conductive through-connector 108 extending through the coupling body and forming a component contact end 112 and a wiring contact end 114; and making direct electrical contact between the electronic component 104 and the component contact end 112. The electronic component 104 is connected to the coupling body 106 before being embedded in the core 102. The method further includes: providing a soft adhesive structure 400 between the electronic component 104 and the component contact end 112 located on the exposed surface of the coupling body 106; and pressing the electronic component 104 and the coupling body 106 together, thereby squeezing the soft adhesive away from the contact area between the component contact end 112 and the electrical contact 160 of the electronic component 104.

[0095] Comparison Figure 6The resulting structure is then subjected to a surface ablation process, such as by laser treatment. This process creates an arrangement of recesses 600 in the surface portions of the two opposite main surfaces 118, 120 of the resulting structure. At the lower main surface 120 and in the area of ​​the coupler 106 exposed to the environment, the recessed structure 600 exposes the wiring contact 114 of the through connector 108. Advantageously, at least the material of the base 402 of the coupler 600 (and preferably also the material of the core 102 exposed to the environment at the two opposite main surfaces 118, 120) is formed of a material with uniform ablation properties, such as pure resin (particularly without glass fiber). The recessed structure 600 is designed, and thus the subsequently formed wiring structure 110 is designed (see...). Figure 7 The laser beam is guided along a trajectory that can be freely defined along the respective main surfaces 118 and 120 to selectively ablate the material at that location to define the desired wiring pattern.

[0096] Reference Figure 6 This method thus provides uniform erosion properties to at least the outer surface portion of the coupler 106 and patterns the outer surface portion by laser drilling to form surface recesses, thereby constituting a recess structure 600.

[0097] In order to obtain the basis such as Figure 7 The component carrier 100 of the exemplary embodiment shown is then filled with a conductive material, preferably copper, into the recess of the recess structure 600 by first performing an electroless deposition process, followed by current deposition of an additional conductive material. This forms a wiring structure 110 in which the wiring contact 114 directly contacts the through connector 108. To obtain Figure 7 The planar component carrier 100 shown can then be treated with chemical mechanical polishing (CMP) to process the opposite main surfaces 118 and 120.

[0098] Therefore, the method further includes filling the surface recess with the conductive wiring structure 110, such that the wiring contact 114 is in direct electrical contact with the wiring structure 110. The wiring structure 110 is completely embedded within the surface portion of the coupler 106 without protruding beyond that surface portion. The surface recess formed by patterning can be filled, for example, by electroless deposition of conductive material followed by current deposition of another conductive material (or by using another process). The method is completed by polishing the exposed surface portion of the coupler 106 and the exposed wiring structure 110 using CMP.

[0099] Figures 8 to 12 The structure obtained during a method of manufacturing a component carrier 100 according to another exemplary embodiment of the invention is shown. Using this method, a structure similar to... Figure 2The component carrier shown corresponds to component carrier 100.

[0100] In order to obtain Figure 8 The structure 800 shown is applied and based on Figure 5 The process is similar to that of [the other process]. However, according to [the other process]... Figure 8 The wiring contact 114 is exposed relative to the dielectric material of the base 402 of the coupling body 106. Alternatively, the wiring contact 114 can also be embedded within the dielectric material of the coupling body 106, such as... Figure 5 Same as in China.

[0101] Subsequently, a coupling layer 202, which may be made of, for example, palladium-doped nonwoven resin, is attached to the exposed lower main surfaces of the coupling body 106 and the core 102. A metal mask layer 802 (e.g., a copper sheet, which may have a thickness between 1 μm and 2 μm) can then be attached to the coupling layer 202. Afterward, a photoresist layer 804 can be formed (e.g., deposited) on the metal mask layer 802. Thus, according to the described method, the conductive mask layer 802 and the photoresist layer 804 are attached to the outer surface portion of the coupling body 202.

[0102] In order to obtain Figure 9 The structure 900 shown can be patterned with the metal mask layer 802 and the photoresist layer 804 according to the desired wiring structure to be formed, to form a plurality of recesses 900. This can be done by a suitable etching process, thereby exposing certain surface portions of the coupling layer 202. Therefore, the method continues to pattern the photoresist layer 804 and the conductive mask layer 802, thereby exposing a portion of the outer surface portion of the coupling layer 202.

[0103] In order to obtain Figure 10 The structure 1000 shown can be further deepened by additional material removal processes, such as reactive ion etching or laser ablation, to thin the photoresist layer 804, and more importantly, to remove the exposed surface portion of the coupling layer 202 to expose a portion of the wiring terminal 114. In other words, preferably, the material of the exposed portion of the outer surface portion of the coupling layer 202 is removed by laser processing to expose a portion of the wiring contact terminal 114.

[0104] In order to obtain Figure 11The structure 1100 shown first involves electroless deposition of a conductive material, such as copper, to selectively form an electroless structure 1102 on the material of the palladium-doped resin coupling layer 202 and the wiring structure ends 114 within the recess 900 (see detail figure 1110). In contrast, during the electroless plating process, conductive material is essentially not deposited on the photoresist layer 804. Subsequently, another conductive material, such as copper, is formed on the electroless structure 1102 to form an electroplated structure 1104 (see detail figure 1110). During this electroplating process, a voltage can be applied to the conductive metal mask layer 802. Thus, a wiring structure 110, consisting of the electroless structure 1102 and the electroplated structure 1104, is formed. Through the described process, the recesses formed in the coupling layer 202 are filled with conductive material to form the wiring structure 110.

[0105] In order to obtain Figure 12 The component carrier 100 shown has its photoresist layer 804 and metal mask layer 802 removed. Given the formation of the described wiring structure 110, consisting of an electroless structure 1102 and an electroplated structure 1104, chemical mechanical polishing is not required.

[0106] Figure 13 It shows a structure before monolithic integration, consisting of multiple components similar to monolithic integrated units. Figure 4 Wafer 1310, showing a structure obtained through semiconductor processing.

[0107] from Figure 13 As can be seen, the common semiconductor substrate 1300, particularly the silicon wafer, comprises multiple individual segments, which can be individualized by separating (e.g., sawing) these segments along the separation line 1304. Each of these segments includes a portion of a corresponding electronic component 104 and a portion of a corresponding coupler 106, which are integrally formed in the common semiconductor substrate 1300. Integrated circuit elements 1302 (such as transistor arrays) are monolithically integrated within the semiconductor substrate 1300 to form the corresponding electronic components 104. Multiple through-connectors 108, implemented as copper pillars, extend vertically through the surrounding semiconductor material and directly contact the integrated circuit elements 1300. A coupling layer 202, such as a polymer layer (or any other material with uniform etching properties), is formed on the top of the processed semiconductor wafer 1300, and the coupling layer can be patterned (not shown) to define the wiring structure 110. Figure 13 (Not shown in the image). After individualization, each of the segments can serve as the basis for forming a component carrier 100 according to an exemplary embodiment of the invention, for example, according to... Figures 5 to 7 or Figures 8 to 12 Any of the forming components or carriers in the process shown.

[0108] It should be noted that the term "comprising" does not exclude other elements or steps, and "a" or "an" does not exclude multiple. Moreover, elements described with respect to different embodiments can be combined.

[0109] The implementation of this invention is not limited to the preferred embodiments shown in the accompanying drawings and described above. Rather, various variations of the illustrated schemes and those based on the principles of the invention are possible, even in fundamentally different embodiments.

Claims

1. A component carrier (100) for carrying electronic components (104), wherein, The component carrier (100) includes: At least partially electrically insulated core (102); At least one electronic component (104) embedded in the core (102); The coupling structure (106, 202) is composed of a separate coupling body disposed separately from the core (102), the coupling structure having at least one conductive through connector (108) extending at least partially through the coupling structure and having a component contact end (112) and a wiring contact end (114). In this embodiment, at least one electronic component (104) is in direct electrical contact with the component contact end (112); The coupling structure (106, 202) has at least a uniform erosion characteristic on its outer surface and is patterned to have surface recesses filled with conductive wiring structures (110). The wiring contact end (114) is in direct electrical contact with the wiring structure (110); The at least one conductive through connector (108) includes at least one columnar member. Wherein, the lateral dimension (d) of the trace of the wiring structure (110) is narrower than the lateral dimension (D) of the at least one conductive through connector (108). The electronic component (104) includes electrical contacts, and the component contact end (112) is directly connected to the electrical contacts. Wherein, the lateral dimension of the electrical contact is wider than the lateral dimension (D) of the at least one conductive through connector (108); or the lateral dimension of the electrical contact is equal to the lateral dimension (D) of the at least one conductive through connector (108).

2. The component carrier (100) according to claim 1 is implemented as a printed circuit board; a substrate; and an internal component.

3. The component carrier (100) according to claim 1 or 2, wherein, The electronic component (104) is selected from the group consisting of active electronic components and passive electronic components.

4. The component carrier (100) according to claim 1, wherein, The electrical insulating material of the core (102) includes at least one of the following: bismaleimide-triazine resin; glass fiber; prepreg; polyimide; liquid crystal polymer; epoxy resin-based laminate; and FR4 material.

5. The component carrier (100) according to claim 1, wherein, At least the outer surface portion of the coupling structure (106, 202) is made of a fiber-free material.

6. The component carrier (100) according to claim 1, wherein, At least the outer surface portion of the coupling structure (106, 202) comprises at least one of pure resin; palladium-doped resin; copper oxide-doped resin; and photoresist.

7. The component carrier (100) according to claim 1, wherein, The column is a cylindrical column.

8. The component carrier (100) according to claim 1, wherein, The outer surface of the wiring structure (110) is flush with the outer surface of the outer surface portion of the coupling structure (106, 202).

9. The component carrier (100) according to claim 1, comprising at least one additional conductive wiring structure (116) located on a main surface (118) of the component carrier (100), the main surface being opposite to another main surface (120) of the component carrier, the outer surface portion of the coupling structure (106, 202) and the wiring structure (110) being located on the other main surface (120).

10. The component carrier (100) according to claim 1, comprising an adhesive structure (400) covering at least a portion of the interface between the coupling structure (106, 202) and the at least one electronic component (104) embedded in the core (102).

11. The component carrier (100) according to claim 1, wherein, At least one of the wiring structure (110) and the at least one conductive straight-through connector (108) comprises at least one of copper, aluminum and nickel, or at least one of the wiring structure (110) and the at least one conductive straight-through connector (108) is composed of at least one of copper, aluminum and nickel.

12. The component carrier (100) according to claim 1, wherein, The at least one conductive through connector (108) includes a plurality of columnar members aligned in parallel with each other.

13. The component carrier (100) according to claim 1, wherein, The at least one column has a polygonal cross-section.

14. The component carrier (100) according to claim 13, wherein, The at least one column has a rectangular cross-section.

15. The component carrier (100) according to claim 1, wherein, The wiring structure (110) is a laser-grooved copper-filled trace.

16. The component carrier (100) according to claim 1, wherein, The length of the at least one conductive through connector (108) is longer than the length of the wiring structure (110).

17. The component carrier (100) according to claim 1, wherein, The length of the at least one conductive through connector (108) is longer than the length of the electrical contact.

18. The component carrier (100) according to claim 1, wherein, The at least one conductive through connector (108) has a cylindrical shape with an aspect ratio greater than 1.

19. The component carrier (100) according to claim 1, wherein, The coupling structure (106, 202) includes prefabricated individual coupling bodies, or the coupling structure (106, 202) is composed of prefabricated individual coupling bodies.

20. A method for manufacturing a component carrier (100) for carrying an electronic component (104), wherein, The method includes: At least one electronic component (104) is embedded in a core (102) that is at least partially electrically insulated; A coupling structure (106, 202) is provided, consisting of separate coupling bodies disposed separately from the core (102), the coupling structure (106, 202) having at least one conductive through connector (108), the at least one conductive through connector extending at least partially through the coupling structure and forming a component contact end (112) and a wiring contact end (114). The at least one electronic component (104) is brought into direct electrical contact with the component contact end (112); Provide uniform erosion properties for at least the outer surface portion of the coupling structure (106, 202); The outer surface portion is patterned to form surface recesses; The surface recess is filled with a conductive wiring structure (110) so that the wiring contact end (114) is in direct electrical contact with the wiring structure (110). Wherein, the lateral dimension (d) of the trace of the wiring structure (110) is narrower than the lateral dimension (D) of the at least one conductive through connector (108). The electronic component (104) includes electrical contacts, and the component contact end (112) is directly connected to the electrical contacts. Wherein, the lateral dimension of the electrical contact is wider than the lateral dimension (D) of the at least one conductive through connector (108); or the lateral dimension of the electrical contact is equal to the lateral dimension (D) of the at least one conductive through connector (108).

21. The method according to claim 20, wherein, The method includes connecting the at least one electronic component (104) to at least a portion of the coupling structure (106, 202) before embedding the at least one electronic component (104) in the core (102).

22. The method according to claim 20 or 21, wherein, The method further includes: A soft adhesive structure (400) is provided between the at least one electronic component (104) and the contact end (112) of the at least one component located at the exposed surface of the coupling structure (106, 202); and Press the at least one electronic component (104) together with at least a portion of the coupling structure (106, 202) to squeeze the soft adhesive away from the contact area between the component contact end (112) and the electrical contact (160) of the at least one electronic component (104).

23. The method of claim 20, wherein, The method further includes forming the surface recess by at least one of laser drilling and etching.

24. The method of claim 20, wherein, The method further includes: At least one accommodating volume is formed within the core (102); The at least one electronic component (104) is housed in at least a portion of the at least one housing volume; and The core (102) is connected to the at least one electronic component (104).

25. The method according to claim 20, wherein, The method includes: fully embedding the wiring structure (110) within the surface portion of the coupling structure (106, 202) without protruding beyond the surface portion.

26. The method of claim 20, wherein, The patterning and filling are performed such that the wiring structure (110) is directly electrically connected to the at least one wiring contact (114) exposed by the patterning of the at least one conductive through connector (108).

27. The method of claim 20, wherein, The surface recesses formed by the patterning are filled by electroless deposition of a conductive material followed by current deposition of another conductive material.

28. The method of claim 20, comprising polishing at least the exposed surface portions of the coupling structures (106, 202) together with the exposed wiring structures (110).

29. The method according to claim 20, wherein, The method includes: A conductive mask layer (802) and a photoresist layer (804) are attached to the outer surface portion of the coupling structure (106, 202); The photoresist layer (804) and the conductive mask layer (802) are patterned to expose a portion of the outer surface portion of the coupling structure (106, 202); Remove the material from the exposed portion of the outer surface portion of the coupling structure (106, 202) to expose at least a portion of the at least one wiring contact (114); The surface recesses thus formed are filled with a conductive material to form the wiring structure (110).

30. The method according to claim 29, wherein, The method further includes removing the photoresist layer (804) and the conductive mask layer (802) after the filling.

31. The method according to claim 29 or 30, wherein, The method does not include polishing the exposed surface after the filling.

32. The method according to claim 20, wherein, The method includes setting at least a portion of the at least one electronic component (104) and the coupling structure (106, 202) as a monolithic integrated structure within a common semiconductor substrate.

33. A component carrier (100) for carrying electronic components (104), wherein, The component carrier (100) includes: At least partially electrically insulated core (102); At least one electronic component (104) embedded in the core (102); The coupling structure (106, 202) is composed of a separate coupling body disposed separately from the core (102), the coupling structure having at least one conductive through connector (108) extending at least partially through the coupling structure and having a component contact end (112) and a wiring contact end (114). In this embodiment, at least one electronic component (104) is in direct electrical contact with the component contact end (112); The coupling structure (106, 202) has at least a uniform erosion characteristic on its outer surface and is patterned to have surface recesses, which are filled with conductive wiring structures (110). The wiring contact end (114) is in direct electrical contact with the wiring structure (110). The dielectric material of the coupling structure (106, 202) includes a matrix and filler particles embedded in the matrix. The material of the matrix and the material of the filling particles together define the uniform erosion characteristics of the outer surface portion of the coupling structure (106, 202).

34. The component carrier (100) according to claim 33, wherein, The filling particles are selected from the group consisting of: beads; and organic fibers.

35. A component carrier (100) for carrying electronic components (104), wherein, The component carrier (100) includes: At least partially electrically insulated core (102); At least one electronic component (104) embedded in the core (102); The coupling structure (106, 202) is composed of a separate coupling body disposed separately from the core (102), the coupling structure having at least one conductive through connector (108) extending at least partially through the coupling structure and having a component contact end (112) and a wiring contact end (114). In this embodiment, at least one electronic component (104) is in direct electrical contact with the component contact end (112); The coupling structure (106, 202) has at least a uniform erosion characteristic on its outer surface and is patterned to have surface recesses, which are filled with conductive wiring structures (110). Wherein, the wiring contact end (114) is in direct electrical contact with the wiring structure (110), and The component carrier includes at least one of the following features: The coupling structure (106, 202) includes a combination of a coupling body and a coupling layer at least partially disposed on the coupling body, or the coupling structure (106, 202) is composed of a combination of a coupling body and a coupling layer at least partially disposed on the coupling body. Wherein, the electrical interface between the at least one electronic component (104) and the at least one conductive through connector (108) has no redistribution layer; The at least one electronic component (104) and at least a portion of the coupling structure (106, 202) are integrally formed in the semiconductor substrate.

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