Photolithography equipment, method for transferring substrate and device manufacturing method

By introducing a drying station into the lithography equipment, active liquid removal on the substrate unloading path is achieved, defect problems caused by liquid residue are solved, and the productivity and product quality of the lithography equipment are improved.

CN110941151BActive Publication Date: 2024-12-24ASML NETHERLANDS BV
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Patent Information

Application Number
CN201911298755.3
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Priority Date
2014-12-18
Filing Date
2015-05-12
Publication Date
2024-12-24
Estimated Expiration
2035-05-12

AI Technical Summary

Technical Problem

During immersion lithography, liquid residue leads to deterioration of resist, causing defects, and the prior art is difficult to effectively remove residual liquid without affecting productivity.

Method used

A lithography device is designed, including a substrate table, a post-exposure treatment module and a drying station, where the substrate is actively removed through the drying station on the unloading path to ensure complete drying during the transfer process.

Benefits of technology

It effectively reduces defects caused by liquid residues, improves the productivity of lithography equipment, ensures the drying of the substrate during the transfer process, and avoids the negative impact of liquid residues on the lithography equipment.

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Abstract

A lithography apparatus comprises: a substrate stage, a post-exposure processing module, a substrate processing robot and a drying station. The substrate stage is configured to support a substrate for an exposure process. The post-exposure processing module is used to process the substrate after exposure. The substrate processing robot is configured to transfer the substrate from the substrate stage to the post-exposure processing module along a substrate unloading path. The drying station is configured to actively remove liquid from the surface of the substrate. The drying station is positioned in the substrate unloading path. The drying station is positioned in the post-exposure processing module. The post-exposure processing module may be a wafer processor.
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Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims the benefit of European Application No. 14172626.5 filed on June 16, 2014, and European Application No. 14178554.3 filed on July 25, 2014, and European Application No. 14198779.2 filed on December 18, 2014, which are incorporated herein by reference in their entirety. Technical Field

[0003] The invention relates to a photolithography device, a method for transferring a substrate and a device manufacturing method. Background Art

[0004] A lithographic apparatus is a machine that applies a desired pattern onto a substrate, typically onto a target portion of the substrate. A lithographic apparatus may, for example, be used in the manufacture of integrated circuits (ICs).

[0005] In immersion lithography, liquid (eg, water) may remain on the resist on the substrate after the exposure process. The liquid may cause the resist to degrade. The degradation of the resist can cause defects where the liquid remains.

[0006] There is a need to reduce defects caused by residual liquid without adversely affecting the productivity of the lithographic apparatus. Summary of the invention

[0007] According to one aspect of the present invention, there is provided a lithography apparatus, comprising: a substrate table configured to support a substrate for an exposure process in which the substrate is exposed to a radiation beam to form a pattern via a liquid; a post-exposure processing module for processing the substrate after exposure; a substrate handling robot configured to transfer the substrate from the substrate table along a substrate unloading path into the post-exposure processing module; and a drying station configured to actively remove liquid from a surface of the substrate; wherein the drying station is positioned in the substrate unloading path and in the post-exposure processing module so that the substrate can completely pass through the drying station during transfer along the substrate unloading path.

[0008] According to one aspect of the present invention, there is provided a method for transferring a substrate in a lithographic apparatus, the method comprising: supporting a substrate on a substrate table for an exposure process, wherein the substrate is exposed to a radiation beam to form a pattern via a liquid during the exposure process; transferring the substrate from the substrate table along a substrate unloading path into a post-exposure processing module for processing the substrate after exposure; and a drying station actively removing liquid from a surface of the substrate; wherein the active removal of liquid is performed in the substrate unloading path and in the post-exposure processing module such that the substrate completely passes through the drying station during the transfer along the substrate unloading path. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Embodiments of the invention will now be described, by way of example only, with reference to the accompanying schematic drawings, in which corresponding reference numerals indicate corresponding parts, and in which:

[0010] Figure 1 depicts a lithographic apparatus according to an embodiment of the invention;

[0011] Figure 2 depicts components of a lithographic apparatus according to an embodiment of the present invention;

[0012] Figure 3 depicts components of a lithographic apparatus according to an embodiment of the present invention;

[0013] Figure 4 and Figure 5 depicts components of a lithographic apparatus according to an embodiment of the present invention;

[0014] Figures 6 to 8 schematically depicts a lithographic apparatus according to an embodiment of the invention;

[0015] Figures 9 to 14 depicts components of a lithographic apparatus according to an embodiment of the invention; and

[0016] Fig.15 and Fig.16 Each depicts a drying station according to an embodiment of the invention. DETAILED DESCRIPTION

[0017] Figure 1A lithographic apparatus 100 according to an embodiment of the invention is schematically depicted. The lithographic apparatus 100 comprises an illumination system (illuminator) IL configured to condition a radiation beam B (e.g., UV radiation or any other suitable radiation); a mask support structure (e.g., mask table) MT configured to support a patterning device (e.g., mask) MA and connected to a first positioning device PM configured to accurately position the patterning device MA according to certain parameters. The lithographic apparatus 100 also comprises a substrate table (e.g., wafer stage) WT configured to hold a substrate (e.g., a resist-coated wafer) W and connected to a second positioning device PW configured to accurately position the substrate W according to certain parameters. The lithographic apparatus 100 further comprises a projection system (e.g., a refractive projection lens system) PS configured to project a pattern imparted to the radiation beam B by the patterning device MA onto a target portion C (e.g., comprising one or more dies) of the substrate W.

[0018] The illumination system IL may include various types of optical components, such as refractive, reflective, magnetic, electromagnetic, electrostatic or other types of optical components, or any combination thereof, to direct, shape, or control the radiation.

[0019] The mask support structure MT supports (i.e., carries) the weight of the patterning device MA. The mask support structure MT holds the patterning device MA in a manner that depends on the orientation of the patterning device MA, the design of the lithography apparatus 100, and other conditions (such as, for example, whether the patterning device MA is held in a vacuum environment). The mask support structure MT can use mechanical, vacuum, electrostatic or other clamping techniques to hold the patterning device. The mask support structure MT can be, for example, a frame or a stage, which can be fixed or movable as required. The mask support structure MT can ensure that the patterning device MA is in a desired position, for example relative to the projection system PS. Any term "reticle" or "mask" used herein can be considered synonymous with the more general term "patterning device".

[0020] The term "patterning device" as used herein should be broadly understood as referring to any device that can be used to impart a pattern to the radiation beam B in its cross-section so as to form a pattern on a target portion C of the substrate W. It should be noted that the pattern imparted to the radiation beam B may not correspond exactly to the desired pattern on the target portion C of the substrate W (for example if the pattern includes phase-shifting features or so-called assist features). Assist features may be placed on the patterning device MA to enable patterning of isolated and / or semi-isolated design features as if these isolated and / or semi-isolated design features were denser than they actually are. Typically, the pattern imparted to the radiation beam B will correspond to a specific functionality in a device (such as an integrated circuit) created in the target portion C.

[0021] The pattern forming device can be transmissive or reflective. Examples of pattern forming devices include masks, programmable mirror arrays, and programmable LCD panels. Masks are well known in photolithography and include mask types such as binary mask types, alternating phase shift mask types, attenuated phase shift mask types, and various hybrid mask types. An example of a programmable mirror array uses a matrix arrangement of small mirrors, each of which can be independently tilted to reflect an incident radiation beam in different directions. The tilted mirrors impart a pattern to the radiation beam reflected by the mirror matrix.

[0022] The term "projection system" as used herein may be broadly interpreted to include any type of projection system, including refractive, reflective, catadioptric, magnetic, electromagnetic and electrostatic optical systems, or any combination thereof, as appropriate to the exposure radiation used, or to other factors such as the use of immersion liquid or the use of a vacuum. Any use of the term "projection lens" herein may be considered synonymous with the more general term "projection system".

[0023] The illumination system IL may include an adjuster AD configured to adjust the angular intensity distribution of the radiation beam. Typically, at least the outer and / or inner radial range (generally referred to as σ-outer and σ-inner, respectively) of the intensity distribution in the pupil plane of the illumination system IL may be adjusted. In addition, the illumination system IL may include various other components, such as an integrator IN and a condenser CN. The illumination system IL may be used to adjust the radiation beam B to have a desired uniformity and intensity distribution in its cross section. The illumination system IL may or may not be considered to form a component of the lithographic apparatus 100. For example, the illumination system IL may be an integral component of the lithographic apparatus 100, or may be an entity separate from the lithographic apparatus 100. In the latter case, the lithographic apparatus 100 may be configured to allow the illumination system IL to be mounted thereon. Optionally, the illumination system IL is detachable and may be provided separately (for example, by the lithographic apparatus manufacturer or another supplier).

[0024] As depicted here, the lithographic apparatus 100 is of a transmissive type (eg, using a transmissive mask). Alternatively, the lithographic apparatus 100 may be of a reflective type (eg, using a programmable mirror array of the type mentioned above, or using a reflective mask).

[0025] The lithographic apparatus 100 may be of a type having two (dual stage) or more substrate tables (and / or two or more mask tables). In such a "multi-stage" machine, additional substrate tables WT and / or mask supports MT may be used in parallel, or preparatory steps may be performed on one or more substrate tables WT and / or mask supports MT while one or more other substrate tables WT and / or mask supports MT are being used for exposure.

[0026] The patterning device MA is held on the mask support structure MT. The radiation beam B is incident on the patterning device MA. The radiation beam B is patterned by the patterning device MA. After reflection from the patterning device MA, the radiation beam B passes through a projection system PS. The projection system PS focuses the radiation beam B onto a target portion C of the substrate W. A first positioner PM and a first position sensor (e.g., an interferometer device, a linear encoder, or a capacitive sensor) can be used to accurately position the patterning device MA relative to the path of the radiation beam B. Figure 1 The first position sensor is not explicitly shown in . With the help of the second positioner PW and the second position sensor PS2 (eg an interferometer device, a linear encoder or a capacitive sensor), the substrate table WT can be accurately moved, for example, so that different target portions C are positioned in the path of the radiation beam B.

[0027] In general, the movement of the mask support structure MT can be achieved with the help of a long-stroke module (coarse positioning) and a short-stroke module (fine positioning) forming part of the first positioning device PM. Similarly, the movement of the substrate table WT can be achieved using a long-stroke module and a short-stroke module forming part of the second positioner PW. In the case of a stepper (as opposed to a scanner), the mask support structure MT may be connected only to a short-stroke actuator, or may be fixed. The patterning device MA can be aligned using mask alignment marks M1, M2. The substrate W can be aligned using substrate alignment marks P1, P2. Although the substrate alignment marks P1, P2 occupy dedicated target portions C as described, they can be positioned between the target portions C (these alignment marks are called scribe alignment marks). Similarly, in the case where more than one die is set on the patterning device MA, the mask alignment marks M1, M2 can be positioned between the dies.

[0028] Immersion technology can be used to increase the numerical aperture NA of the projection system PS. Figure 1As depicted, in an embodiment, the lithographic apparatus 100 is of a type in which at least a portion of the substrate W may be covered by a liquid having a relatively high refractive index (e.g., water) so as to fill the space between the projection system PS and the substrate W. Immersion liquid may also be applied to other spaces in the lithographic apparatus 100, for example, between the patterning device MA and the projection system PS. The term "immersion" as used in the present invention does not mean that structures such as the substrate W must be immersed in the liquid, but only means that the liquid is positioned between the projection system PS and the substrate W during exposure.

[0029] See also Figure 1 , the illuminator IL receives a radiation beam from a radiation source SO. For example, when the source module SO is an excimer laser, the source module SO and the lithographic apparatus 100 may be separate entities. In these cases, the source module SO is not considered to form a component of the lithographic apparatus 100, and the radiation is transferred from the source module SO to the illumination system IL with the aid of a beam delivery system BD. In an embodiment, the beam delivery system BD comprises, for example, suitable directional reflectors and / or a beam expander. In other cases, for example, when the source module SO is a mercury lamp, the source module SO may be an integral part of the lithographic apparatus 100. The source module SO and the illumination system IL, as well as the beam delivery system BD provided if necessary, may be collectively referred to as a radiation system.

[0030] Arrangements for providing liquid between the final element of the projection system PS and the substrate W can be classified into three general categories. These categories are bath type configurations, so-called localised immersion systems and full wet immersion systems. In a bath type configuration, substantially all of the substrate W and, optionally, part of the substrate table WT, is immersed in a bath of liquid.

[0031] like Figure 1 As depicted, the liquid supply system is provided with a liquid confinement structure IH extending along at least a part of a boundary of the space between the final element of the projection system PS and the substrate W, substrate table WT or both. Figure 2 Such an arrangement is shown in the figure. Figure 2 The arrangement shown and described below can be applied to the arrangement described above and Figure 1 A lithographic apparatus is shown.

[0032] Figure 2A localised liquid supply system or process fluid handling system is schematically depicted having a liquid confinement structure IH extending along at least a part of a boundary of a space 11 between a final element of the projection system PS and a substrate table WT or substrate W. (Note that reference to the surface of the substrate W hereinafter also refers additionally or alternatively to the surface of the substrate table WT unless explicitly stated otherwise.) In an embodiment, a seal is formed between the liquid confinement structure IH and the surface of the substrate W. The seal may be a contactless seal such as a gas seal 16 (such a system with a gas seal is disclosed in European patent application publication number EP-A-1,420,298) or a liquid seal.

[0033] The liquid confinement structure IH at least partially contains liquid in a space 11 between the final element of the projection system PS and the substrate W. The space 11 is at least partially formed by the liquid confinement structure IH positioned below and around the final element of the projection system PS. Liquid is brought into the space 11 below the projection system PS and within the liquid confinement structure IH by means of a liquid inlet / outlet 13. Liquid can be removed by means of the liquid inlet / outlet 13. In an embodiment, one of the two liquid inlets / outlets 13 supplies liquid and the other liquid inlet / outlet 13 removes liquid, depending on the scanning direction.

[0034] Liquid may be contained in space 11 by means of a gas seal 16. During use, gas seal 16 is formed between the bottom of the liquid confinement structure IH and the surface of the substrate W. Gas in gas seal 16 is provided under pressure via inlet 15 to the gap between the liquid confinement structure IH and the substrate W. Gas is extracted via outlet 14. The overpressure on gas inlet 15, the vacuum level on outlet 14, and the geometry of the gap are arranged so that there is a high velocity gas flow into the confined liquid. The force of the gas on the liquid between the liquid confinement structure IH and the substrate W causes the liquid to be contained in space 11. Such a system is disclosed in U.S. Patent Application Publication No. US2004-0207824, the entire text of which is incorporated by reference. In one embodiment, the liquid confinement structure IH does not have a gas seal.

[0035] In the localized area liquid supply system, the substrate W moves under the projection system PS and the liquid supply system. When the edge of the substrate W is to be imaged, the edge of the substrate W (or other target object) will pass under the space 11. When the sensor on the substrate table WT (or on the measurable table) is to be imaged, the edge of the substrate W (or other target object) will pass under the space 11. A dummy substrate or a so-called closing plate can be positioned under the liquid supply system to enable (for example) substrate replacement. When the substrate table WT is to be moved so that a dummy substrate or a so-called closing plate can be positioned under the liquid supply system, the edge of the substrate W (or other target object) will pass under the space 11. Liquid may leak into the gap between the substrate W and the substrate table WT. This liquid may be pressed under fluid static pressure or fluid dynamic pressure or under the force of an air knife or other gas flow generating device.

[0036] Figure 3 is a side cross-sectional view depicting an additional liquid supply system or process fluid handling system according to an embodiment. Figure 3 The arrangement illustrated in and described below may be applied to the arrangement described above and Figure 1 The illustrated lithographic apparatus 100 includes a liquid supply system having a liquid confinement structure IH extending along at least a portion of a boundary of a space 11 between a final element of the projection system PS and a substrate table WT or substrate W. (Note that references to the surface of the substrate W hereinafter may also additionally or alternatively refer to the surface of the substrate table WT, unless otherwise expressly stated).

[0037] The liquid confinement structure IH at least partially contains liquid in a space 11 between the final element of the projection system PS and the substrate W. The space 11 is at least partially formed by the liquid confinement structure IH positioned below and surrounding the final element of the projection system PS. In an embodiment, the liquid confinement structure IH comprises a body member 53 and a porous member 83. The porous member 83 is plate-shaped and has a plurality of holes (i.e., openings or pores). In an embodiment, the porous member 83 is a mesh plate in which a plurality of small holes 84 are formed to be in the form of a mesh. Such a system is disclosed in U.S. Patent Application Publication No. US2010 / 0045949A1, which is incorporated by reference in its entirety.

[0038] The main body member 53 includes: a supply orifice 72, which can supply liquid to the space 11; and a recovery orifice 73, which can recover liquid from the space 11. The supply orifice 72 is connected to a liquid supply device 75 via a channel 74. The liquid supply device 75 can supply liquid to the supply orifice 72. The liquid fed from the liquid supply device 75 is supplied to each of the supply orifices 72 through the corresponding channel 74. The supply orifice 72 is arranged at a prescribed position of the main body member 53 facing the optical path near the optical path. The recovery orifice 73 can recover liquid from the space 11. The recovery orifice 73 is connected to a liquid recovery device 80 via a channel 79. The liquid recovery device 80 includes a vacuum system and can recover liquid by sucking liquid through the recovery orifice 73. The liquid recovery device 80 recovers the liquid LQ recovered through the recovery orifice 23 through the channel 29. The porous member 83 is arranged in the recovery orifice 73.

[0039] In one embodiment, in order to form a space 11 having liquid between the projection system PS and the liquid confinement structure IH (on one side) and the substrate W (on the other side), liquid is supplied to the space 11 from the supply orifice 72 and the pressure in the recovery chamber 81 in the liquid confinement structure IH is adjusted to a negative pressure so as to recover the liquid via the holes 84 (i.e., the recovery orifice 73) of the porous member 83. The liquid supply operation using the supply orifice 72 and the liquid recovery operation using the porous member 83 are performed to form the space 11 between the projection system PS and the liquid confinement structure IH (on one side) and the substrate W (on the other side).

[0040] In the use of the lithographic apparatus 100, the substrate W undergoes different lithography steps and process steps. The substrate W may be cleaned, for example, using a wet chemical process. The substrate W may be heated to a temperature sufficient to dissipate any moisture that may be present on the surface of the substrate W. The substrate W may be covered with a layer of a resist (e.g., a photoresist / photoresist). The substrate W may be pre-baked to dissipate excess photoresist solvent. The substrate W is then exposed so that the pattern in the radiation beam B is transferred to the substrate W. The substrate W may then undergo development, etching, and removal of the resist. These steps may be repeated for additional layers on the substrate W.

[0041] like Figure 1 As depicted, in an embodiment, the lithographic apparatus 100 comprises a substrate table WT. The substrate table WT is configured to support a substrate W for an exposure process. During the exposure process, the substrate W is exposed to a radiation beam B via a liquid (i.e., an immersion liquid) to form a pattern on the substrate W. In an embodiment, a method of transferring a substrate W in the lithographic apparatus 100 is provided. The method comprises supporting the substrate W on the substrate table WT for an exposure process. During the exposure process, a pattern in the radiation beam B is transferred to the substrate W.

[0042] Some liquid (e.g., water) is left on the resist on the substrate W after the exposure process. The liquid may cause the resist to degrade. The degradation of the resist may cause defects where liquid remains. Multiple layers may be formed on each substrate W. Even if the probability of a defect occurring in a single layer is small, the overall probability of a defect occurring may still be significant if the number of layers is large.

[0043] In one embodiment, the lithography apparatus 100 includes a post-exposure processing module 94 ( Figure 6 ). The post-exposure processing module is used to process the substrate W after exposure. After the exposure process, the substrate W is processed by the post-exposure processing module 94. For example, in one embodiment, the post-exposure processing module 94 includes at least one substrate processing device sensor 51 (which may also be referred to as a wafer processor sensor). The at least one substrate processing device sensor 51 is configured to measure parameters associated with the substrate processing robot 41 (e.g., the position of the holder 43, the inclination angle of the holder 43). In one embodiment, the at least one substrate processing device sensor 51 is mounted on the sensor frame SF ( Figure 1 The sensor frame SF may be referred to as a measurement frame. Alternatively, in one embodiment, at least one substrate processing device sensor 51 is mounted on a base frame BF ( Figure 1 In one embodiment, the liquid confinement structure IH is attached to the sensor frame SF. In one embodiment, the projection system PS is attached to the sensor frame SF. In one embodiment, the substrate table WT is attached to the base frame BF. In one embodiment, the sensor frame SF is dynamically isolated from the base frame BF. In one embodiment, at least one substrate handling device sensor 51 is used to check whether the position and inclination of the holder 43 of the substrate handling robot 41 are within a fixed tolerance during substrate exchange.

[0044] In one embodiment, at least one substrate processing device sensor 51 includes one or more (e.g., two) optical sensors. The optical sensors are configured to measure the inclination of the holder 43 around the Y axis. In one embodiment, at least one substrate processing device sensor 51 includes one or more (e.g., three) other sensors. In one embodiment, the other sensors of at least one substrate processing device sensor 51 are capacitive. The other sensors of at least one substrate processing device sensor 51 are configured to measure the position of the holder 43 in the XY plane.

[0045] In an embodiment, the lithographic apparatus 100 comprises two substrate handling robots 41. In an embodiment, the lithographic apparatus 100 comprises two substrate handling device sensors 51 associated with each substrate handling robot 41. Each substrate handling robot 41 has a pair of substrate handling device sensors 51 associated therewith.

[0046] Figure 4 Components of a lithographic apparatus 100 according to an embodiment are schematically depicted. In an embodiment, the lithographic apparatus 100 comprises a substrate handling robot 41. The substrate handling robot 41 is configured to transfer a substrate W from a substrate table WT along a substrate unloading path to a post-exposure processing module 94. In an embodiment, a method of transferring a substrate W comprises transferring a substrate W from a substrate table WT along a substrate unloading path to a post-exposure processing module 94 for processing the substrate W after exposure.

[0047] like Figure 4 As depicted, in one embodiment, the substrate handling robot 41 includes a robot arm 42 (or substrate handling arm). In one embodiment, the substrate handling robot 41 includes a positioner component 44 ( Figure 6 4 and a holder 43. The positioner assembly 44 is interfaced with the holder 43. For example, the positioner assembly 44 may be interfaced with the holder 43 via a robot arm 42. In an embodiment, the robot arm 42 is driven by an actuator of the positioner assembly 44 and is used to transfer the substrate W between the substrate table WT and an unloading dock in the post-exposure processing module 94.

[0048] In one embodiment, the holder 43 includes a pair of prongs spaced apart in a substantially horizontal plane. In one embodiment, the upper surface of each of the prongs or a portion thereof may be provided with an area having a burl formed by laser sintering. The use of burls enables the use of vacuum and electrostatic clamping techniques and prevents particles from distorting the substrate W.

[0049] In an embodiment, the lithographic apparatus 100 comprises a drying station 90. The drying station 90 is configured to actively remove liquid from the surface 46 of the substrate W. For example, droplets 50 of immersion liquid may be present at the surface 46 of the substrate W. The drying station 90 is configured to actively remove the droplets 50 from the surface 46 of the substrate W. The drying station 90 is configured to actively remove a film of liquid from the surface 46 of the substrate W.

[0050] In an embodiment, the drying station 90 is positioned in the substrate unloading path. Specifically, the drying station 90 is positioned in the substrate unloading path so that the substrate W can pass completely through the drying station 90 during transfer along the substrate unloading path. The substrate W can be dried in the substrate unloading path. Embodiments of the present invention are contemplated to achieve drying of the substrate W without causing the substrate W to deviate from the substrate unloading path between the substrate table WT and the post-exposure processing module 94.

[0051] By arranging that the substrate W can pass completely through the drying station 90 during transfer along the substrate unloading path, it is not necessary to provide drying for specific locations (e.g., holding tables). Assuming that the substrate W can pass completely through the drying station 90 means that there is enough space beyond the drying station 90 in the substrate unloading path to fit the substrate W. It is not the case that the substrate W passes partially under the drying station 90, wherein subsequent relative movement between the substrate W and the drying station 90 (e.g., rotation of the substrate W) allows drying of the surface 46 of the substrate W. Instead, the substrate W passes completely through the drying station 90, so that the substrate W is dried during the process of transferring the substrate W along the substrate unloading path.

[0052] In an embodiment, the drying station 90 is positioned in a post-exposure processing module 94. A substrate unloading path extends from an edge of the substrate table WT to a location within the post-exposure processing module 94. Part of the substrate unloading path is within the post-exposure processing module 94. In an embodiment, the drying station 90 is positioned in a portion of the substrate unloading path within the post-exposure processing module 94. Active removal of liquid is performed in the substrate unloading path and in the post-exposure processing module 94.

[0053] In one embodiment, the post-exposure processing module 94 is a substrate processing device (which may also be referred to as a wafer processor). The type of drying station 90 is not particularly limited. By arranging the drying station 90 to be located in the substrate processing device, it is contemplated that embodiments of the present invention achieve an increase in the productivity of exposed substrates W. In one embodiment, the drying station 90 is configured so as to maintain productivity, for example, by being positioned in the substrate processing device.

[0054] The drying station 90 may be referred to as a wafer dryer. In one embodiment, the drying station 90 is located near where the substrate W leaves the substrate table WT (e.g., wafer table) in the substrate processing apparatus. In one embodiment, the drying station 90 is just inside the substrate processing apparatus, located near where the substrate W leaves the substrate table WT.

[0055] In one embodiment, the drying station 90 includes one or more of an air knife 91, a water bath, and a continuous liquid stream. Figure 4 A drying station 90 comprising an air knife 91 is depicted.

[0056] Figure 5 A drying station 90 is depicted that includes a continuous liquid stream (which may be referred to as a waterline). Figure 5 As depicted, in one embodiment, the drying station 90 includes a flow supply opening 92 and a flow extraction opening 93. The flow supply opening 92 is configured to supply a flow of liquid (e.g., water) to a space between the drying station 90 and the surface 46 of the substrate W. The flow extraction opening 93 is configured to extract liquid, such as water, from the space between the drying station 90 and the surface 46 of the substrate W.

[0057] The flow supply opening 92 and the flow extraction opening 93 are configured to provide a continuous liquid flow to the space between the drying station 90 and the surface 46 of the substrate W. The continuous liquid flow may be referred to as a water line or a water bath. The liquid flow in contact with the surface 46 of the substrate W is larger than the droplets 50. When the liquid flow contacts the droplets 50, the droplets 50 become part of the liquid flow. The droplets 50 are actively removed from the surface 46 of the substrate W using surface tension.

[0058] In one embodiment, the drying station 90 comprises a liquid extractor (which may be referred to as a single-phase extractor) that extracts only liquid from the surface 46 of the substrate W. Alternatively, in one embodiment, the drying station 90 comprises a two-phase extractor that extracts both liquid and gas from the surface 46 of the substrate W.

[0059] When the drying station 90 includes a liquid bath, the liquid bath may be provided by an arrangement similar to that of the liquid confinement structure 1H as described above. In use, a liquid (such as water) is supplied to the substrate W so that the gap between the substrate W and the liquid extractor of the drying station 90 is filled with water. Water is continuously supplied during the drying process to ensure that the gap between the substrate W and the liquid extractor is always filled with water. The water filling the gap may be referred to as a water bath. The liquid to be removed from the substrate and the water supplied by the drying station 90 become a single body of liquid (i.e., a water bath). The liquid extractor extracts water from the gap between the substrate W and the drying station 90. The water bath allows the liquid extractor to extract liquid that is not thick enough to rely on itself to cross the gap between the substrate W and the liquid extractor. Even if the thickness of the liquid to be removed from the surface 46 of the substrate W is not high enough to reach the liquid extractor, the use of the water bath still helps ensure that the gap between the substrate W and the liquid extractor is filled.

[0060] In an embodiment, the drying station 90 includes an air knife that removes liquid from the surface 46 of the substrate W.

[0061] In an embodiment, the drying station comprises a heater configured to heat the surface 46 of the substrate W. Liquid on the surface 46 of the substrate W is heated and evaporates from the surface 46 of the substrate W.

[0062] In one embodiment, the drying station 90 has the form of a drying station arm and a rotator. The drying station arm is configured to actively remove liquid from the surface 46 of the substrate W. The rotator is configured to rotate the drying station arm through a rotation plane parallel to the surface 46 of the substrate W. Fig.11 and Fig.13 The drying station arms and rotators are shown in and described in further detail below.

[0063] In one embodiment, the lithographic apparatus 100 comprises a substrate turntable 120 configured to rotate the substrate W, such as Fig.11In an embodiment, the drying station 90 has the form of a drying station arm that extends across a radius of the substrate turntable 120 such that the drying station arm is configured to actively remove liquid from the surface 46 of the substrate W as the substrate W rotates on the substrate turntable 120 .

[0064] In one embodiment, the substrate unloading path is substantially straight. By setting the substrate unloading path to be substantially straight, the straight line movement of the substrate processing robot 41 along the substrate unloading path causes the substrate W to pass through the drying station 90. The drying station 90 actively removes liquid from the surface of the substrate W. The substrate W can be moved directly from the substrate table WT to the substrate processing module 94. The substrate W can be dried during the direct movement. It does not waste time to move the substrate W to the drying station 90 or the drying station 90 moves away from the substrate W. When the substrate W is transferred in a straight line along the substrate unloading path, the substrate W passes through the drying station 90, so that the drying station 90 actively removes liquid from the surface 46 of the substrate W. It can be expected that embodiments of the present invention achieve increased productivity.

[0065] However, it is not necessary to make the substrate unloading path substantially or essentially straight. In an embodiment, the substrate unloading path is curved. By arranging the substrate unloading path to be curved, the layout of other components within the lithographic apparatus 100 is less restricted.

[0066] As mentioned above and as Figure 6 As depicted, in one embodiment, the substrate handling robot 41 includes a locator component 44 and a holder 43 coupled to the locator component 44. The holder 43 is configured to hold a substrate W. In one embodiment, the holder 43 includes a clamp configured to clamp the substrate W. For example, the clamp may clamp the edge of the substrate W. In an alternative embodiment, the holder 43 includes a clamping member configured to clamp the substrate W. For example, the clamp may clamp the substrate W from below. The clamping member may include a vacuum chuck or may be an electrostatic clamp. The locator component 44 may be referred to as the wrist of the substrate handling robot 41. The locator component 44 is configured to move between a robot unloading position and a robot processing position. In the robot unloading position, the holder 43 holds the substrate W on the substrate table WT. In the robot processing position, the holder 43 holds the substrate W in the post-exposure processing module 94. In Figure 4 and Figure 5 In the embodiment, the positioner component 44 ( Figure 4 or Figure 5 ) is located between the robot unloading position and the robot processing position.

[0067] After exposure of the substrate W, the positioner assembly 44 is located at the robot unloading position and the holder 43 holds the substrate W. The substrate W is removed from the substrate table WT. The positioner assembly 44 moves from the robot unloading position to the robot processing position. In one embodiment, the positioner assembly 44 moves along the substrate unloading path. In one embodiment, the robot processing position is within the post-exposure processing module 94.

[0068] The edge of the substrate table WT is located at the upstream end of the substrate unloading path. The downstream end of the substrate unloading path is within the post-exposure processing module 94. In an embodiment, the drying station 90 is located in the substrate unloading path upstream of the robot unloading position. The positioner component 44 does not move past the drying station 90. When the positioner component 44 moves toward the substrate table WT, the positioner component 44 does not reach the drying station 90. By setting the positioner component 44 not to reach the drying station 90, the drying station 90 is outside the movement range of the positioner component 44. The drying station 90 does not hinder the movement of the positioner component 44 of the substrate processing robot 41.

[0069] In one embodiment, the substrate W is moved substantially horizontally by the substrate handling robot 41. In one embodiment, the holder 43 is located below the substrate W when the substrate W is being transferred. In one embodiment, the height of the locator component 44 in the z direction is greater than the height of the holder 43 in the z direction. In one embodiment, the top of the locator component 44 is higher than the surface 46 of the substrate W. In one embodiment, the top of the locator component 44 is higher than the bottom of the drying station 90. If the drying station 90 is within the range of movement of the locator component 44, the drying station 90 may potentially hinder the movement of the locator component. By arranging the drying station 90 to be positioned upstream of the robot unloading position in the substrate unloading path, the drying station 90 is outside the range of movement of the locator component 44. The drying station 90 does not hinder the movement of the locator component 44 of the substrate handling robot 41.

[0070] In an embodiment, the drying station 90 is positioned adjacent to the robot unloading position. By positioning the drying station 90 adjacent to the robot unloading position, the drying station 90 can be as close to the substrate table WT as possible without hindering the movement of the substrate handling robot 41. It is contemplated that embodiments of the present invention enable the removal of liquid from the surface 46 of the substrate W as quickly as possible without negatively affecting productivity. It is desirable to remove liquid, such as water, from the substrate W as quickly as possible.

[0071] After the substrate W is unloaded from a stage (e.g., substrate table WT), and without affecting the productivity of the machine (i.e., lithographic apparatus 100), a drying station 90, which may be referred to as a dryer, removes liquid from the substrate W as quickly as possible. It may be desirable to position the drying station 90 as close as possible to the location where the substrate W is unloaded. It may be desirable to cause the movement of the substrate handling robot 41 to pull the surface 46 of the substrate W under the fluid flow of the drying station 90. By removing the droplets 50 as quickly as possible, the exposure time of the resist to the water droplets is minimized, thereby reducing the risk of defects. In an embodiment, the drying station 90 is located in a substrate handling device (which may be referred to as a wafer handler).

[0072] The form of the drying station 90 may be anything as long as it is feasible. Figure 4 and Figure 5 The two types depicted and described above are examples of simple drying stations 90 .

[0073] The drying station 90 is associated with the substrate handling device because having the substrate table WT with the substrate handling device (e.g. at or above the substrate table WT) will negatively affect productivity. This is because, after the exposure process, additional time will be required at the wafer stage to dry the substrate WT. The substrate W moves more slowly when it is being dried than otherwise. If the drying station 90 is located at the wafer stage (e.g. at the liquid confinement structure IH or at the substrate table WT), the substrate W will need to be removed from the substrate table WT slowly in order to dry the substrate W.

[0074] By arranging the drying station 90 to be located in the post-exposure processing module 94, the substrate W can be removed from the substrate table WT more quickly. A subsequent substrate W can be loaded onto the substrate table WT more quickly for the next exposure process. It is envisaged that embodiments of the present invention achieve an increase in the productivity of the lithographic apparatus 100.

[0075] In one embodiment, the post-exposure processing module 94 includes at least one substrate handling device sensor 51. For example, the substrate handling device sensor 51 can be a substrate exchange sensor (which can be referred to as a wafer exchange sensor). The at least one substrate handling device sensor 51 is configured to measure parameters associated with the substrate handling robot 41. For example, in one embodiment, the at least one substrate handling device sensor 51 is configured to measure the tilt of the holder 43 of the substrate handling robot 41 relative to the XY plane. In one embodiment, the at least one substrate handling device sensor 51 is positioned in the substrate unloading path. In one embodiment, the at least one substrate handling device sensor 51 performs measurements when the substrate W is being transferred from the substrate table WT after the exposure process.

[0076] In one embodiment, the drying station 90 is positioned near at least one substrate handling device sensor 51. In one embodiment, the drying station 90 is located in / near the substrate exchange sensor. In one embodiment, the drying station 90 is located adjacent to at least one substrate handling device sensor 51. In one embodiment, at least one substrate handling device sensor 51 is attached to the sensor frame SF. The sensor frame SF is positioned in the substrate unloading path. In one embodiment, the drying station 90 is located between the robot unloading position and the sensor frame SF. In one embodiment, the drying station 90 is fixed to the sensor frame SF. By fixing the drying station 90 to the sensor frame SF, the space occupied by the drying station 90 is minimized.

[0077] In one embodiment, the drying station 90 is located between at least one substrate processing device sensor 51 and the base frame BF of the lithographic apparatus 100. In one embodiment, the base frame BF comprises an air duct. In one embodiment, the drying station 90 is located between the air duct and at least one substrate processing device sensor 51.

[0078] In one embodiment, the width of the drying station 90 is greater than the width of the substrate W. For example, when the width of the substrate W is about 300 mm, the drying station 90 may have a width greater than about 300 mm, such as 320 mm. When the width of the substrate W is about 450 mm, the drying station 90 may have a width greater than about 450 mm. The drying station 90 may actively remove liquid from the entire surface 46 of the substrate W. When the substrate W passes under the drying station 90, the drying station 90 actively removes liquid from the surface 46 of the substrate W.

[0079] In one embodiment, the drying station 90 has a width, a length, and a height. In one embodiment, the drying station 90 is elongated such that the width is greater than the length or the height. In one embodiment, the width is greater than about 300 mm, or greater than about 450 mm. For example, in one embodiment, the width of the drying station 90 is about 320 mm. In one embodiment, the length is less than about 50 mm, for example, about 20 mm. In one embodiment, the height is less than about 50 mm, for example, about 30 mm.

[0080] In an embodiment, the lithographic apparatus 100 comprises an exposure module 95 interfaced with a post-exposure processing module 94. The substrate table WT is located in the exposure module 95. The liquid confinement structure IH is located in the exposure module 95. In an embodiment, the drying station 90 is positioned near or in the interface between the exposure module 95 and the post-exposure processing module 94.

[0081] The drying station 90 is not located in the exposure module 95 so that no time is wasted drying the substrate W in the exposure module 95 . It is contemplated that embodiments of the present invention enable increased productivity of substrates W through the exposure module 95 .

[0082] The drying station 90 is positioned near the interface between the exposure module 95 and the post-exposure processing module 94 so that the drying station 90 is positioned as close as possible to the substrate table W. By positioning the drying station 90 as close as possible to the substrate table W, the time that the droplets 50 remain on the surface 46 of the substrate W is minimized.

[0083] The location of the drying station 90 within the post-exposure processing module 94 may be selected to minimize spatial conflicts with other components of the lithographic apparatus 100. In one embodiment, the drying station 90 is separated from the interface between the exposure module 95 and the post-exposure processing module 94.

[0084] In one embodiment, the drying station 90 includes a drying station actuator 45 ( Figure 6 ). The drying station actuator 45 is configured to move the drying station 90 up and down relative to the stationary components of the lithographic apparatus 100. For example, in one embodiment, the substrate handling device sensor 51 is stationary during use of the lithographic apparatus 100. The drying station actuator 45 is configured to move the drying station 90 up and down relative to the substrate handling device sensor 51. In one embodiment, the drying station actuator 45 is configured to move the drying station 90 up and down relative to the substrate W. The drying station actuator 45 is configured to move the drying station 90 between a drying position and a non-drying position. In the drying position, the drying station 90 actively removes liquid from the surface 46 of the substrate W.

[0085] By providing a drying station actuator 45, the drying station 90 can have a drying position that will interfere with the movement of the substrate processing robot 41 even if the substrate processing robot 41 moves through the drying position. As mentioned above, in an embodiment, the positioner component 44 of the substrate processing robot 41 does not reach the drying station 90, so that the drying station 90 is outside the movement range of the positioner component 44. Therefore, the drying station 90 does not hinder the movement of the positioner component 44 of the substrate processing robot 41. However, by providing a drying station actuator 45, the drying station 90 does not hinder the movement of the positioner component 44 of the substrate processing robot 41 even if the substrate processing robot 41 reaches the drying station 90 in the XY plane. In the non-drying position, the drying station 90 does not interfere with the movement of the substrate processing robot 41 because the drying station 90 and the substrate processing robot 41 have different positions in the z direction. In an embodiment where the substrate processing robot 41 reaches the drying station 90 in the XY plane, when the positioner component 44 of the substrate processing robot 41 passes through the drying station 90, the drying station 90 is located in the non-drying position. After the positioner member 44 has passed the drying station 90, the drying station actuator 45 may move the drying station 90 to the drying position. When the substrate W passes the drying station 90, the drying station 90 is located in the drying position.

[0086] In an embodiment, the method of transferring a substrate W comprises moving a drying station 90 up and down (relative to stationary parts of the lithographic apparatus 100 ) between a drying position in which the drying station 90 actively removes liquid from a surface 46 of the substrate W and a non-drying position.

[0087] In one embodiment, the substrate handling robot 41 is configured to reduce the speed of the substrate W through the substrate unloading path as the substrate W passes through the drying station 90. Although reducing the speed may reduce throughput, a higher proportion of liquid may be removed from the surface 46 of the substrate W. In one embodiment, the substrate W is transferred through the substrate unloading path at a reduced speed as the substrate W passes through the drying station 90. For example, the substrate handling robot 41 may transfer the substrate W through the substrate unloading path at a reduced speed of approximately 1 ms as the substrate W passes through the drying station 90. -1 By reducing the speed, a higher proportion of liquid can be removed from the surface 46 of the substrate W as the substrate W passes through the drying station 90.

[0088] In the drying position, the distance between the drying station 90 and the substrate W passing underneath is desirably as small as possible. In one embodiment, the distance is less than about 10 mm, and preferably, less than about 5 mm. In one embodiment, the distance is less than about 1 mm, for example, about 0.3 mm.

[0089] In one embodiment, the drying station 90 is positioned near at least one substrate handling device sensor 51. The drying station 90 is located in the area where the substrate handling device sensor 51 is located. In one embodiment, the drying station 90 is connected to a fixed component of the lithographic apparatus 100. For example, in one embodiment, the drying station 100 is connected to Figure 1 The base frame BF is depicted.

[0090] In an embodiment, the drying station 90 has a fixed position within the lithographic apparatus 100. In this embodiment, the drying station 90 is not moved during use of the lithographic apparatus 100 or during use of the drying station 90. In use of the lithographic apparatus 100, the substrate handling robot 41 transfers a substrate W from the substrate table WT under the drying station 90 so that the drying station 90 actively removes liquid from the surface of the substrate W. The drying station 90 has an air static bearing to create a defined distance between the substrate W and the drying station 90. As the substrate W moves under the drying station 90, liquid is actively removed from the surface of the substrate W.

[0091] In one embodiment, the drying station 90 is in the area where the substrate sensor is located, and the drying station 90 is actuated in the vertical direction by the drying station actuator 45. Figure 6The drying station actuator 45 is described. The substrate sensor is configured to measure a parameter (e.g., height) associated with the substrate W. The substrate processing device sensor 51 may be used as a substrate sensor. Alternatively, the substrate sensor may be a sensor separate from the substrate processing device sensor 51. The substrate sensor is positioned between the substrate table WT and the drying station 90. After the substrate W is unloaded from the substrate table WT, the substrate W passes through the substrate sensor before the substrate W passes through the drying station 90. In one embodiment, the substrate sensor is configured to measure the height of the substrate W. In one embodiment, the drying station 90 is actuated by the drying station actuator 45 based on the height measurement made by the substrate sensor. In one embodiment, the drying station actuator 45 is controlled based on the height measurement made by the substrate sensor. The drying station 90 has an air static pressure bearing to generate a defined distance between the substrate W and the drying station 90. Although the drying station 90 is actuated in the vertical direction, the drying station 90 is stationary in the horizontal direction. When the substrate W moves below the drying station 90, liquid is actively removed from the substrate W.

[0092] In one embodiment, the holder 43 of the substrate handling robot 41 has a shape for increasing the flatness of the substrate W. The holder 43 provides mechanical support to overcome the unevenness of the substrate W. For example, in one embodiment, the holder 43 includes a mesh structure of pillars 140 extending in a horizontal direction so as to provide mechanical support for the substrate more widely in the plane of the substrate W. Fig.14 The pillars are shown in FIG.

[0093] Figure 7 Schematically depicts a lithographic apparatus 100 according to an embodiment. Figure 7 As shown, in one embodiment, the lithographic apparatus 100 includes a post-immersion rinse module 96. The post-immersion rinse module 96 is connected to the post-exposure processing module 94 via an interface. The post-immersion rinse module 96 includes a post-immersion rinse station (not shown). In the post-immersion rinse module 96, for example, at the post-immersion rinse station, unwanted watermarks can be removed from the surface of the substrate W. Undesirable watermarks can damage the structures printed on the substrate W. Therefore, the watermarks can undesirably affect the product yield. Undesirable watermarks can be caused by liquids such as immersion liquids that remain on the surface of the substrate W after the exposure process.

[0094] Figure 8 A lithographic apparatus 100 is depicted according to an embodiment. Figure 8 As depicted, in one embodiment, the post-exposure processing module 94 includes a storage unit 110 . The storage unit 110 is configured to store a plurality of substrates W. The storage unit 110 includes a plurality of substrate receiving units. The substrates W may be stored in respective substrate receiving units of the storage unit 110 .

[0095] Fig. 9The storage unit 110 of the lithographic apparatus 100 according to an embodiment is schematically depicted. Fig. 9 As depicted, in one embodiment, the storage unit 110 includes an upper closed substrate accommodating unit 111 as one of the substrate accommodating units. The upper closed substrate accommodating unit 111 is configured to store or accommodate a closed substrate. In one embodiment, the storage unit 110 includes a lower closed substrate accommodating unit 112 as one of the substrate accommodating units. The lower closed substrate accommodating unit 112 is configured to store or accommodate a closed substrate. In one embodiment, the storage unit 110 includes zero, one, or more than two substrate accommodating units for storing closed substrates.

[0096] The closed substrate may be used to stabilize the temperature of components of the lithographic apparatus 100 during the time period between exposure processes of different substrates W. For example, a batch of substrates W may be exposed in an exposure process. Before exposing a subsequent batch of substrates W, the closed substrate may be positioned on the substrate table WT for temperature stabilization. For example, the closed substrate may help stabilize the temperature of the substrate table WT. In an embodiment, the substrates W may be loaded from the post-immersion rinse module 96 into the bottom receiving unit 114.

[0097] like Fig. 9 As depicted, in one embodiment, the storage unit 110 includes a discharge unit 113 as one of the substrate receiving units. The discharge unit 113 is configured to receive a substrate W after the substrate W has been exposed in an exposure process. In one embodiment, the substrate handling robot 41 is configured to transfer the exposed substrate W from the substrate table WT to the discharge unit 113. In one embodiment, the exposed substrate W is then transferred from the discharge unit 113 to the post-immersion rinse module 96.

[0098] like Fig. 9 As depicted, in one embodiment, the storage unit 110 includes a bottom receiving unit 114 as one of the substrate receiving units. In one embodiment, the bottom receiving unit 114 is configured to store or receive a substrate W.

[0099] like Fig.10 As depicted, in one embodiment, the drying station 90 is positioned in the storage unit 110. In one embodiment, the drying station 90 is positioned in the area of ​​the discharge unit 113. The drying station 90 may be positioned in other components of the storage unit 110. For example, the drying station 90 may be positioned in the bottom receiving unit 114. Alternatively, the drying station 90 may be positioned at or near an entry / exit point of the discharge unit 113 for the storage unit 110.

[0100] Fig. 9 and Fig.10A specific arrangement of substrate receiving units is shown. However, the storage unit 110 appears in a different arrangement of substrate receiving units. For example, in one embodiment, the discharge unit 113 can be arranged to be located at the top of the storage unit 110. Therefore, the drying station 90 can be positioned at the top of the storage unit 110.

[0101] Fig.11 A plan view schematically depicts components of a lithographic apparatus 100 according to an embodiment. Fig.11 Depicts a substrate W undergoing a drying process. Fig.11 As depicted, in one embodiment, the drying station 90 is elongated and takes the form of a drying station arm. The drying station 90 is configured to actively remove liquid from the surface of the substrate W. For example, the drying station 90 may include an air knife 91 or a continuous liquid stream.

[0102] like Fig.11 As depicted, in one embodiment, the drying station 90 in the form of a drying station arm is configured to rotate about a pivot point 97. In one embodiment, the drying station 90 includes a rotator (not shown) configured to rotate the drying station 90 in the form of a drying station arm through a rotation plane parallel to the surface of the substrate W. When the drying station 90 is not in use, the drying station 90 can be rotated so that it is retracted to a position where it is not positioned over any substrate W in the discharge unit 113. When the drying station 90 is to be used, the drying station 90 in the form of a drying station arm is rotated about the pivot point 97.

[0103] For example, in one embodiment, the rotation of the drying station 90 is controlled so that a portion of the drying station 90 is positioned above the middle or center point of the substrate W. When the drying station 90 is not needed, the drying station 90 can be retracted so that the drying station 90 does not obstruct other components such as the substrate W when the substrate W is being transferred into the discharge unit 113. Subsequently, when the substrate W is in a proper position in the discharge unit 113, the drying station 90 is rotated to a position where the drying station 90 can actively remove liquid from the surface of the substrate W.

[0104] like Fig.11 As depicted, in one embodiment, the discharge unit 113 includes a substrate turntable 120. The substrate turntable 120 is configured to rotate the substrate W. The substrate W is moved relative to the drying station 90 by rotation of the drying station 90, by rotation of the substrate W, or by a combination of rotation of the drying station 90 and rotation of the substrate W.

[0105] like Fig.11As depicted, in one embodiment, a drying station 90 in the form of a drying station arm extends over the radius of the substrate turntable 120. The drying station 90 does not extend across the entire diameter of the substrate W in use. Instead, the drying station 90 has a length just greater than the radius of the substrate W. The drying station 90 can actively remove liquid from the surface of the substrate W as the substrate W rotates on the substrate turntable 120.

[0106] In one embodiment, the drying station 90 moves integrally with a substrate support member that supports the substrate W. For example, Fig.11 The drying station arm shown in FIG. 1 may be integrally formed with the substrate support component. In this embodiment, the substrate support component may form part of the substrate turntable 120. Fig.11 The various components of the depicted substrate turntable 120 form a rotating device for clamping a substrate W and rotating the substrate W.

[0107] Alternatively, the substrate W may be supported by a plate and / or support rods below the substrate W. In this embodiment, the plate and / or support rods may form a component or part of the substrate turntable 120. It is contemplated that this embodiment enables a drying station 90 that is simplified compared to the drying station described in the above paragraphs because the drying station 90 is independent of the plate and support rods that support the substrate W.

[0108] In an embodiment, the drying station 90 does not rotate in a plane parallel to the substrate W. In an embodiment, the drying station 90 is fixed in position during use of the lithographic apparatus 100. In this embodiment, the pivot point 97 may not be provided. In this embodiment, the rotation of the substrate W beneath the drying station 90 is utilized to remove liquid from the surface of the substrate W. It is contemplated that such an embodiment enables a simpler construction for the drying station 90, as there is no need to rotate the drying station 90.

[0109] Fig.12 1 depicts a portion of a lithographic apparatus 100 according to an embodiment. Fig.12 As depicted, in an embodiment, the drain unit 113 is not provided with a substrate turntable 120. Instead, the substrate W may be substantially stationary within the drain unit 113. Instead of rotating the substrate W, the drying station 90 is configured to move across the substrate W. The drying station 90 is configured to translate horizontally over the substrate W. As the drying station 90 moves across and over the substrate W, liquid is actively removed from the surface of the substrate W.

[0110] exist Fig.12In the figure, the double-ended arrow shows the direction in which the drying station 90 is configured to move. The direction is not particularly limited. The moving direction is horizontal. As an example, in one embodiment, the moving direction of the drying station 90 is horizontal and perpendicular to the horizontal direction in which the substrate W enters the discharge unit 113. In an alternative embodiment, the moving direction of the drying station 90 is horizontal and parallel to the horizontal direction in which the substrate W enters the discharge unit 113.

[0111] Fig.13 Schematically depicts a portion of a lithographic apparatus 100 according to an embodiment. Fig.13 As depicted, in one embodiment, drying station 90 takes the form of a drying station arm that is rotatable about pivot point 97. Fig.13 As depicted, in an embodiment, the drying station 90 is elongated such that it is longer than the diameter of the substrate W. Such an embodiment is expected to enable a simpler construction for the storage unit 110. In particular, it is not necessary for the discharge unit 113 (or other unit housing the drying station 90) to have a substrate turntable 120.

[0112] exist Fig.13 In the depicted configuration, the substrate W may be substantially stationary within the discharge unit 113. When the drying station 90 is to be used, the drying station 90 may be rotated across the full surface of the substrate W. For example, in an embodiment, the drying station 90 may be rotated about the pivot point 97 across an arc subtending at least 90°.

[0113] Fig.15 and Fig.16 Each of them depicts a drying station 92 according to an embodiment of the present invention. Fig.15 and Fig.16 The features of the drying station 90 shown may be applied to any of the embodiments described above where the drying station 90 includes a flow supply opening 92 and a flow extraction opening 93 .

[0114] like Fig.15 As depicted, in one embodiment, the drying station 90 includes a plurality of flow supply openings 92. The flow supply openings 92 are elongated and have a slot shape. The elongation direction of the flow supply openings 92 is at an oblique angle relative to the width direction and the length direction of the drying station 90. Fig.15 The small arrows shown indicate the flow direction from the flow supply opening 92 to the flow extraction opening 93 .

[0115] like Fig.15 As shown, the flow supply opening 92 may form an acute angle α with respect to the length direction of the drying station. Therefore, the direction perpendicular to the elongated direction of the flow supply opening 92 forms an angle α with respect to the length direction of the drying station 90. In one embodiment, the acute angle α is in the range of about 40° to about 80°.

[0116] like Fig.15 As depicted, in one embodiment, the drying station 90 includes a plurality of flow extraction openings 93. The flow extraction openings 93 are elongated and have a slit shape. In one embodiment, the shape of the flow extraction openings 93 is substantially the same as the shape of the flow supply openings 92. Fig.15 As depicted, in one embodiment, the flow extraction opening 93 forms an oblique angle relative to the length and width directions of the drying station 90 .

[0117] like Fig.15 As depicted, in one embodiment, the flow supply openings 92 are substantially parallel to each other. In one embodiment, the flow extraction openings 93 are substantially parallel to each other. In one embodiment, the flow supply openings 92 are substantially parallel to the flow extraction openings 93. It is contemplated that embodiments of the present invention achieve a reduction in the time required to scan the drying station 90 relative to the surface 46 of the substrate W.

[0118] In one embodiment, the widths of the flow supply openings 92 overlap each other. This means that when the widths of the flow supply openings 92 are aligned along the length direction (which is Fig.15 When the drying station 90 is viewed from the short side of the drying station (shown), the flow supply openings 92 appear to overlap each other. In one embodiment, the flow extraction openings 93 similarly overlap each other in the width direction of the drying station 90. The width direction is Fig.15 In one embodiment, the drying station 90 is arranged so that when the drying station 90 moves relative to the surface 46 of the substrate W in a linear movement (in the length direction of the drying station 90), the entire width of the surface 46 of the substrate W is exposed to the flow supply openings 92 and the flow extraction openings 93.

[0119] In one embodiment, the flow supply openings 92 are spaced apart from the corresponding flow extraction openings 93 by a distance of less than 20 millimeters. In one embodiment, the space between the flow supply openings 92 and the corresponding flow extraction openings 93 is less than about 5 millimeters, and optionally greater than about 2 millimeters. It is contemplated that embodiments of the present invention achieve a reduction in the time required to scan the drying station 90 relative to the surface 46 of the substrate W. The substrate W can be passed under the drying station 90 at a higher speed while achieving acceptable drying performance. Each flow supply opening 92 can be relatively small while achieving the effect of exposing the entire width of the surface 46 of the substrate W to the flow supply openings 92.

[0120] Fig.16 Alternative geometric variations of the flow supply openings 92 and flow extraction openings 93 for the drying station 90 are depicted. Fig.16As depicted, in one embodiment, the drying station 90 includes a plurality of flow supply openings 92. Each flow supply opening 92 includes a substantially circular opening. In one embodiment, the drying station 90 includes a plurality of flow extraction openings 93, each of the plurality of flow extraction openings 93 forming a ring around the corresponding flow supply opening 92. For example, in one embodiment, each flow extraction opening 93 has an annular shape around the flow supply opening 92. It is contemplated that embodiments of the present invention achieve adequate drying performance while reducing the likelihood that fluid supplied by the flow supply openings 92 reaches unintended sections of the lithographic apparatus 100.

[0121] Alternatively, in one embodiment, the flow extraction opening 93 forms a smaller circular opening for the flow supply opening 92 to surround the corresponding flow extraction opening 93. In one embodiment, the flow supply opening 92 is outside the corresponding flow extraction opening 93.

[0122] like Fig.16 As depicted, in one embodiment, the flow supply opening 92 forms a pair with the corresponding flow extraction opening 93. In one embodiment, the pair of flow supply openings 92 and the corresponding flow extraction openings 93 are arranged to form a row. Fig.16 As depicted, in one embodiment, the pair of flow supply openings 92 and flow extraction openings 93 are arranged to form staggered rows or columns. In one embodiment, the flow extraction openings or flow supply openings 92 are arranged to overlap each other in the width direction. When the drying station 90 moves relative to the substrate W, the entire width of the surface 46 of the substrate W passes under the flow supply openings 92 and / or flow extraction openings 93.

[0123] In one embodiment, the flow supply opening 92 is spaced apart from the corresponding flow extraction opening 93 by a distance less than 20 mm. In one embodiment, the space between the flow supply opening 92 and the corresponding flow extraction opening 93 is less than about 5 mm, and optionally greater than about 2 mm.

[0124] Unless otherwise stated, the embodiments of the present invention described above are compatible with drying stations 90 that use either gas or liquid to perform active removal of liquid from the surface of the substrate. Figure 4 In the depicted configuration, the gas knife 91 may be modified so that a liquid flow is provided (instead of a gas). In this embodiment, the liquid is recovered by a liquid recovery system.

[0125] Modifiable Figure 5 The depicted configuration is such that the flow supply openings 92 and the flow extraction openings 93 provide a flow of gas (instead of liquid) therebetween. Regardless of the location of the drying station 90, either gas or liquid may be used to perform active removal of liquid from the surface of the substrate W.

[0126] In an embodiment, a device is manufactured using a device manufacturing method, the device manufacturing method comprising using a lithographic apparatus 100 as described above. The lithographic apparatus 100 transfers a pattern from a patterning device MA to a substrate W. In an embodiment, the device manufacturing method comprises a method of transferring a substrate W as described above.

[0127] The present disclosure provides the following embodiments:

[0128] Embodiment 1: A device for processing a substrate, comprising:

[0129] a post-exposure processing module configured to process the exposed substrate, the post-exposure processing module comprising a storage unit configured to store the substrate; and

[0130] A drying station, located in the storage unit and configured to actively remove residual liquid from the surface of the substrate, wherein the drying station comprises:

[0131] an elongated structure including a flow supply opening and a flow extraction opening,

[0132] an actuator system configured to provide relative movement between the elongated structure and the substrate in the storage unit, and

[0133] A control system configured to control the supply of liquid from the flow supply opening and the extraction of liquid from the flow extraction opening to extract substantially all of the supplied liquid at once, thereby forming a local area of ​​liquid that is scanned across the substrate during relative movement between the elongated structure and the substrate in the storage unit caused by the actuator.

[0134] Embodiment 2: The apparatus of embodiment 1, wherein the actuator system is further configured to move the elongated structure up and down relative to the substrate between a drying position and a non-drying position, wherein the drying station actively removes the liquid from the surface of the substrate in the drying position.

[0135] Embodiment 3: The apparatus of Embodiment 1, wherein the storage unit is configured to store a plurality of substrates in each stacked substrate receiving unit of the storage unit; and

[0136] The drying station is located in or above one of the substrate receiving units of the storage unit, and at least one other of the substrate receiving units has no drying device.

[0137] Embodiment 4: The apparatus according to Embodiment 3, wherein at least two other of the substrate holding units are free of drying apparatus.

[0138] Embodiment 5: An apparatus for processing a substrate, comprising:

[0139] A post-exposure processing module configured to process the exposed substrate, the post-exposure processing module comprising: a storage unit configured to store a plurality of substrates in respective stacked substrate accommodating units of the storage unit; and

[0140] A drying station is configured to actively remove residual liquid from the surface of the substrate, wherein the drying station is located above the support surface of a first substrate accommodating unit of the substrate accommodating units, and at least a second substrate accommodating unit of the substrate accommodating units located below the first substrate accommodating unit has no drying equipment.

[0141] Embodiment 6: The device according to embodiment 5 further includes:

[0142] an elongated structure including a flow supply opening and a flow extraction opening,

[0143] an actuator configured to provide relative movement between the elongated structure and the substrate in the storage unit, and

[0144] A control system configured to control the supply of liquid from the flow supply opening and the extraction of liquid from the flow extraction opening to extract substantially all of the supplied liquid at once, thereby forming a local area of ​​liquid that is scanned across the substrate during relative movement between the elongated structure and the substrate in the storage unit caused by the actuator.

[0145] Embodiment 7: The apparatus of Embodiment 5 further comprising an actuator system configured to move the structure up and down relative to the substrate between a drying position and a non-drying position, wherein the drying station actively removes liquid from the surface of the substrate.

[0146] Embodiment 8: The apparatus of Embodiment 5, wherein at least one additional one of the substrate holding units is devoid of a drying apparatus.

[0147] Embodiment 9: The apparatus according to any one of Embodiments 1 to 8, further comprising a substrate handling robot configured to transfer the substrate to the drying station along the substrate unloading path.

[0148] Embodiment 10: The apparatus according to embodiment 9, wherein the substrate processing robot comprises a locator component and a holder connected to the locator component by an interface, wherein the holder is configured to hold the substrate, wherein the locator component is configured to move between a robot unloading position and a robot processing position, wherein at the robot unloading position the holder holds the substrate on or above a substrate table arranged to hold the substrate for exposure by a projection system configured to project radiation onto the substrate, and at the robot processing position the holder holds the substrate at a drying station.

[0149] Embodiment 11: The apparatus of Embodiment 9 further comprising at least one substrate handling device sensor configured to measure parameters associated with the substrate handling robot, wherein the at least one substrate handling device sensor is located in a substrate unloading path.

[0150] Embodiment 12: The apparatus of Embodiment 10, wherein the at least one substrate handling device sensor is mounted on a sensor frame of the lithographic apparatus.

[0151] Embodiment 13: The apparatus of Embodiment 10, wherein the at least one substrate handling device sensor is mounted on a base frame of the lithographic apparatus.

[0152] Embodiment 14: The apparatus of Embodiment 10, wherein the at least one substrate handling device sensor is used to check whether the position and tilt of a holder of a substrate handling robot is within fixed tolerances during substrate exchange.

[0153] Embodiment 15: The apparatus according to any one of embodiments 1-4 and 6, wherein the supply of liquid from the flow supply opening is continuous so that a gap between the substrate and the liquid extractor of the drying station is filled with liquid.

[0154] Embodiment 16: The apparatus according to any one of Embodiments 1-8 further comprises a substrate turntable configured to rotate the substrate.

[0155] Embodiment 17: The apparatus of Embodiment 16, wherein the elongated structure extends across a radius of the substrate turntable to actively remove liquid from the surface of the substrate as the substrate rotates on the substrate turntable.

[0156] Embodiment 18: A lithography apparatus, comprising:

[0157] a substrate stage configured to support a substrate;

[0158] a projection system configured to project a radiation beam onto a substrate;

[0159] a liquid handling system configured to provide liquid to a space between a substrate table and a projection system for use in an exposure process in which the substrate is exposed to a radiation beam via the liquid to form a pattern; and

[0160] A post-exposure processing module as described in any one of embodiments 1-17.

[0161] Embodiment 19: The lithographic apparatus of Embodiment 18, wherein the common housing is configured to accommodate at least one substrate table, a liquid handling system, a storage unit, and a drying station therein.

[0162] Embodiment 20: A method for processing a substrate, the method comprising:

[0163] transferring the substrate having residual liquid thereon along a substrate unloading path to a storage unit configured to store the substrate;

[0164] providing relative movement between an elongated structure and a substrate within the storage unit, the elongated structure comprising a liquid supply opening and a liquid extraction opening; and

[0165] Residual liquid is actively removed from the substrate by supplying liquid from the liquid supply opening and extracting liquid through the liquid extraction opening so that substantially all of the supplied liquid is extracted at once, thereby forming a local area of ​​liquid that is scanned across the substrate during relative movement between the elongated structure and the substrate in the storage unit.

[0166] Embodiment 21: A method as described in Embodiment 20, wherein the elongated structure is located above the supporting surface of a first substrate accommodating unit of a plurality of substrate accommodating units of the storage unit, and at least a second substrate accommodating unit of the substrate accommodating units located below the first substrate accommodating unit has no drying device.

[0167] Although the present invention may specifically refer to the use of lithographic equipment in IC manufacturing, it should be understood that the lithographic equipment described in the present invention may have other applications, such as manufacturing integrated optical systems, guidance and detection patterns for magnetic domain memories, flat panel displays, liquid crystal displays (LCDs), thin film heads, etc. It should be understood by those skilled in the art that in the context of these alternative applications, any use of the term "wafer" or "die" in the present invention may be considered synonymous with the more general term "substrate" or "target portion", respectively. The substrates mentioned in the present invention may be processed in (for example) coating traces (tools that typically apply a resist layer to a substrate and develop the exposed resist), measurement tools, and / or detection tools before or after exposure. When applicable, the disclosures in the present invention may be applied to these and other substrate processing tools. In addition, the substrate may be processed more than once, for example, to produce a multi-layer IC, so that the term substrate used herein may also refer to a substrate that already includes multiple processed layers.

[0168] The terms "radiation" and "beam" as used herein encompass all types of electromagnetic radiation, including ultraviolet (UV) radiation (e.g., having a wavelength of or about 365 nm, 248 nm, 193 nm, 157 nm or 126 nm) and extreme ultraviolet (EUV) radiation (e.g., having a wavelength in the range of 5 nm to 20 nm), as well as particle beams (such as ion beams or electron beams).

[0169] Although specific embodiments of the present invention have been described above, it will be appreciated that the present invention may be practiced in other ways than those described. The above description is intended to be illustrative rather than restrictive. Therefore, it will be apparent to one of ordinary skill in the art that modifications may be made to the described invention without departing from the scope of the claims set forth below.

Claims

1. An apparatus for processing a substrate, comprising: a post-exposure processing module configured to process the exposed substrate, the post-exposure processing module comprising a storage unit configured to store the substrate; and A drying station, located in the storage unit and configured to actively remove residual liquid from the surface of the substrate, wherein the drying station comprises: an elongated structure including a flow supply opening and a flow extraction opening, an actuator system configured to provide relative movement between the elongated structure and the substrate in the storage unit, and A control system configured to control the supply of liquid from the flow supply opening and the extraction of liquid from the flow extraction opening to extract substantially all of the supplied liquid at once, thereby forming a local area of ​​liquid that is scanned across the substrate during relative movement between the elongated structure and the substrate in the storage unit caused by the actuator.

2. The device according to claim 1, wherein: The actuator system is also configured to move the elongated structure up and down relative to the substrate between a drying position and a non-drying position, in which the drying station actively removes the liquid from a surface of the substrate.

3. The device of claim 1, wherein: The storage unit is configured to store a plurality of substrates in respective stacked substrate receiving units of the storage unit; and The drying station is located in or above one of the substrate receiving units of the storage unit, and at least one other of the substrate receiving units has no drying device.

4. The device according to claim 3, wherein: At least two other substrate accommodating units among the substrate accommodating units do not have a drying device.

5. An apparatus for processing a substrate, comprising: A post-exposure processing module configured to process the exposed substrate, the post-exposure processing module comprising: a storage unit configured to store a plurality of substrates in respective stacked substrate accommodating units of the storage unit; and A drying station is configured to actively remove residual liquid from the surface of the substrate, wherein the drying station is located above the support surface of a first substrate accommodating unit of the substrate accommodating units, and at least a second substrate accommodating unit of the substrate accommodating units located below the first substrate accommodating unit has no drying equipment.

6. The device according to claim 5, further comprising: an elongated structure including a flow supply opening and a flow extraction opening, an actuator configured to provide relative movement between the elongated structure and the substrate in the storage unit, and A control system configured to control the supply of liquid from the flow supply opening and the extraction of liquid from the flow extraction opening to extract substantially all of the supplied liquid at once, thereby forming a local area of ​​liquid that is scanned across the substrate during relative movement between the elongated structure and the substrate in the storage unit caused by the actuator.

7. The apparatus of claim 6, further comprising an actuator system configured to move the elongated structure up and down relative to the substrate between a drying position and a non-drying position, wherein the drying station actively removes liquid from the surface of the substrate.

8. The device according to claim 5, wherein: At least one other of the substrate accommodating units is free of a drying device.

9. The apparatus according to any one of claims 1 to 8, further comprising a substrate handling robot configured to transfer the substrate to the drying station along a substrate unloading path.

10. The device according to claim 9, wherein: The substrate handling robot comprises a positioner component and a holder connected to the positioner component by an interface, wherein the holder is configured to hold the substrate, wherein the positioner component is configured to move between a robot unloading position and a robot processing position, wherein in the robot unloading position the holder holds the substrate on or above a substrate table arranged to hold the substrate for exposure by a projection system configured to project radiation onto the substrate, and in the robot processing position the holder holds the substrate at a drying station.

11. The apparatus of claim 9, further comprising at least one substrate handling device sensor configured to measure a parameter associated with the substrate handling robot, wherein: The at least one substrate handling device sensor is located in a substrate unloading path.

12. The device according to claim 11, wherein The at least one substrate handling device sensor is mounted on a sensor frame of the lithographic apparatus.

13. The device according to claim 11, wherein: The at least one substrate handling device sensor is mounted on a base frame of the lithographic apparatus.

14. The device according to claim 11, wherein: The at least one substrate handling device sensor is used to check whether the position and tilt of the holder of the substrate handling robot is within fixed tolerances during substrate exchange.

15. The apparatus according to any one of claims 1 to 4 and 6, wherein: The supply of liquid from the flow supply opening is continuous so that the gap between the substrate and the liquid extractor of the drying station is filled with liquid.

16. The apparatus according to any one of claims 1 to 8, further comprising a substrate turntable configured to rotate the substrate.

17. The apparatus of claim 16, wherein the elongated structure extends across a radius of the substrate turntable to actively remove liquid from a surface of the substrate as the substrate rotates on the substrate turntable.

18. A lithographic apparatus comprising: a substrate stage configured to support a substrate; a projection system configured to project a radiation beam onto a substrate; a liquid handling system configured to provide liquid to a space between a substrate table and a projection system for use in an exposure process in which the substrate is exposed to a radiation beam via the liquid to form a pattern; and A post-exposure processing module as claimed in any one of claims 1 to 17.

19. The lithographic apparatus of claim 18, wherein a common housing is provided, configured to accommodate at least one substrate table, the liquid handling system, the storage unit and the drying station therein.

20. A method for processing a substrate, the method comprising: transferring the substrate having residual liquid thereon along a substrate unloading path to a storage unit configured to store the substrate; providing relative movement between an elongated structure and a substrate within the storage unit, the elongated structure including a liquid supply opening and a liquid extraction opening; and Residual liquid is actively removed from the substrate by supplying liquid from the liquid supply opening and extracting liquid through the liquid extraction opening so that substantially all of the supplied liquid is extracted at once, thereby forming a local area of ​​liquid that is scanned across the substrate during relative movement between the elongated structure and the substrate in the storage unit.

21. The method of claim 20, wherein the elongated structure is located above a supporting surface of a first substrate accommodating unit of a plurality of substrate accommodating units of the storage unit, and at least a second substrate accommodating unit of the substrate accommodating units located below the first substrate accommodating unit has no drying device.

22. An apparatus for processing a substrate, comprising: A post-exposure processing module, used for processing the substrate after exposure; a substrate handling robot configured to transfer a substrate from a substrate stage along a substrate unloading path to a post-exposure processing module; and a drying station configured to actively remove liquid from a surface of the substrate; wherein the drying station has the form of a drying station arm configured to actively remove liquid from the surface of the substrate, and a rotator configured to rotate the drying station arm through a rotation plane parallel to the surface of the substrate, and the drying station is located in the substrate unloading path and in the post-exposure processing module so that the substrate can completely pass through the drying station during transfer along the substrate unloading path.

23. The apparatus for processing a substrate according to claim 22, wherein: The substrate unloading path is substantially straight such that linear movement of the substrate handling robot along the substrate unloading path causes the substrate to pass through the drying station, thereby causing the drying station to actively remove the liquid from a surface of the substrate.

24. The apparatus for processing a substrate according to claim 22, wherein: The substrate processing robot includes a positioner component and a holder connected to the positioner component by an interface, the holder is configured to hold the substrate, and the positioner component is configured to move between a robot unloading position and a robot processing position, wherein in the robot unloading position the holder holds the substrate above the substrate table, and in the robot processing position the holder holds the substrate in the post-exposure processing module.

25. The apparatus for processing a substrate according to claim 24, wherein: The drying station is positioned in the substrate unloading path upstream from the robot unloading location.

26. The apparatus for processing a substrate according to claim 25, wherein: The drying station is positioned adjacent to the robot unloading location.

27. The apparatus for processing a substrate according to any one of claims 22 to 26, wherein: The post-exposure processing module is a substrate processing device.

28. The apparatus for processing a substrate according to any one of claims 22 to 26, wherein: The post-exposure processing module includes at least one substrate handling device sensor, which is configured to measure parameters associated with the substrate handling robot, the at least one substrate handling device sensor is located in the substrate unloading path, and the drying station is located near the at least one substrate handling device sensor.

29. The apparatus for processing a substrate according to any one of claims 22 to 26, wherein: The post-exposure processing module includes at least one substrate handling device sensor, which is configured to measure parameters associated with the substrate handling robot, the at least one substrate handling device sensor is attached to a sensor frame, the sensor frame is located in the substrate unloading path, and the drying station is located between the robot unloading position and the sensor frame.

30. The apparatus for processing a substrate according to claim 29, wherein: The drying station is secured to the sensor frame and / or positioned adjacent to the at least one substrate handling device sensor.

31. The apparatus for processing a substrate according to claim 28, wherein: The parameter is one of a position of a holder of the substrate handling robot and a tilt of a holder of the substrate handling robot.

32. The apparatus for processing a substrate according to claim 29, wherein: The parameter is one of a position of a holder of the substrate handling robot and a tilt of a holder of the substrate handling robot.

33. An apparatus for processing a substrate according to any one of claims 22-26, further comprising a substrate turntable configured to rotate the substrate, wherein the drying station has the form of a drying station arm extending over a radius of the substrate turntable such that the drying station arm is configured to actively remove liquid from a surface of the substrate as the substrate rotates on the substrate turntable.

34. The apparatus for processing a substrate according to any one of claims 22 to 26, wherein: The drying station is located near a substrate unloading position where the substrate is unloaded from the substrate stage.

35. The apparatus for processing a substrate according to any one of claims 22 to 26, wherein: The drying station is located near an interface between an exposure module of a lithographic apparatus including the substrate table and the post-exposure processing module.

36. The apparatus for processing a substrate according to claim 35, wherein: The drying station is separated from an interface between the exposure module and the post-exposure processing module.

37. The apparatus for processing a substrate according to any one of claims 22 to 26, wherein: The drying station includes a drying station actuator configured to move the drying station up and down relative to a substrate between a drying position and a non-drying position in which the drying station actively removes the liquid from a surface of the substrate.

38. The apparatus for processing a substrate according to any one of claims 22 to 26, wherein: The substrate handling robot is configured to reduce a speed at which substrates pass through a substrate unloading path as the substrates pass through the drying station.

39. The apparatus for processing a substrate according to any one of claims 22 to 26, wherein: The drying station includes one or more of an air knife, a water bath, and a continuous liquid stream.