A dynamic test device for insulated gate bipolar transistor

By designing a dynamic test device for insulated gate bipolar transistors, the automated testing and processing of workpieces is realized, the problems of inefficient and inaccurate testing are solved, and the production efficiency and economic benefits are improved.

CN111025120BActive Publication Date: 2025-03-28YANTAI ZHUOYUAN ELECTRONIC TECH CO LTD
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Patent Information

Application Number
CN201911398926.X
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2019-12-30
Publication Date
2025-03-28
Estimated Expiration
2039-12-30

AI Technical Summary

Technical Problem

Insulated gate bipolar transistors require multiple tests after production, resulting in inefficiency and inaccuracy, which may cause production accidents.

Method used

A dynamic testing device for insulated gate bipolar transistors is designed, including a frame, feeding assembly, feeding assembly, test assembly and collecting assembly, to realize the automated testing and processing of workpieces.

Benefits of technology

It improves testing efficiency and accuracy, realizes fully automated testing, reduces manual intervention, and can conduct high current (200-300A) online testing, improving production efficiency and economic benefits.

✦ Generated by Eureka AI based on patent content.

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Abstract

The present invention provides an insulated gate bipolar transistor dynamic test device, comprising: a frame, a feeding assembly, a feeding assembly, a testing assembly and a receiving assembly, wherein the feeding assembly, the feeding assembly, the testing assembly and the receiving assembly are all arranged on the frame, the feeding assembly and the receiving assembly are respectively arranged at opposite ends of the frame, the feeding assembly is arranged along the length direction of the frame, and the feeding assembly is located between the feeding assembly and the receiving assembly, the feeding assembly is used to transport the workpiece in the feeding assembly, and the testing assembly is arranged on one side of the feeding assembly. Compared with the prior art, the present invention can improve the test efficiency and test accuracy, thereby achieving high production efficiency, and then improving the purpose of economic benefits, and can realize the large current (200-300A) online test of the device.
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Description

Technical Field

[0001] The invention relates to a testing device, in particular to an insulated gate bipolar transistor dynamic testing device. Background Art

[0002] IGBT (Insulated Gate Bipolar Transistor), insulated gate bipolar transistor, is a composite fully controlled voltage-driven power semiconductor device composed of BJT (bipolar transistor) and MOS (insulated gate field effect transistor), which has the advantages of both MOSFET's high input impedance and GTR's low on-state voltage drop. GTR has low saturation voltage drop and high current density, but large driving current; MOSFET has very low driving power and fast switching speed, but large on-state voltage drop and low current density. IGBT combines the advantages of the above two devices, with low driving power and low saturation voltage drop. It is very suitable for use in converter systems with DC voltage of 600V and above, such as AC motors, inverters, switching power supplies, lighting circuits, traction drives and other fields.

[0003] After the insulated gate bipolar transistor is produced, a series of tests need to be carried out to ensure that its various performances meet the standards. Due to the large number of test types, the testing efficiency of the staff is low, and the tests are inaccurate, which leads to serious production accidents. Therefore, an auxiliary testing device suitable for insulated gate bipolar transistors is needed to improve the testing efficiency and accuracy. Summary of the invention

[0004] In view of this, the present invention provides an insulated gate bipolar transistor dynamic testing device, which can improve the testing efficiency and testing accuracy, thereby achieving high production efficiency and further improving economic benefits.

[0005] The present invention provides an insulated gate bipolar transistor dynamic testing device, comprising: a frame, a feeding assembly, a feeding assembly, a testing assembly and a receiving assembly, wherein the feeding assembly, the feeding assembly, the testing assembly and the receiving assembly are all arranged on the frame, the feeding assembly and the receiving assembly are respectively arranged at opposite ends of the frame, the feeding assembly is arranged along the length direction of the frame, and the feeding assembly is located between the feeding assembly and the receiving assembly, the feeding assembly is used to transport workpieces in the feeding assembly, and the testing assembly is arranged on one side of the feeding assembly.

[0006] Furthermore, the above-mentioned feeding assembly includes a feeding panel for placing the workpiece, the feeding panel is provided with a discharge port, a longitudinal driving motor is provided on the side of the feeding panel close to the discharge port, a push rod is connected to the longitudinal driving motor, the longitudinal driving motor drives the push rod to push the workpiece out of the discharge port, and a transverse driving motor is provided at the bottom of the feeding panel, and the transverse driving motor drives the feeding panel to move transversely.

[0007] Furthermore, the above-mentioned feeding assembly includes multiple groups of linear guide rails arranged along the length direction of the frame, and lifting cylinders are installed on the linear guide rails. The tops of the multiple groups of linear guide rails are connected to material transfer tracks, and transfer slides are arranged under the material transfer tracks. A horizontal drive motor for driving the workpiece to move is arranged at the end of the transfer slide.

[0008] Furthermore, the above-mentioned test component 4 includes two parallelly arranged test units, and the test unit includes a first guide rail, a material transfer lifting cylinder is provided at one end of the first guide rail, a material transfer motor is provided at the other end of the first guide rail, a slide seat is slidably connected to one side of the first guide rail, and the material transfer motor drives the slide seat to move forward and backward, a material transfer clamp cylinder is connected to the slide seat, a clamp is connected to the material transfer clamp cylinder, and a test bench 416 is provided under the clamp, and the test bench is used to test the workpiece.

[0009] Furthermore, a material lowering box is arranged on one side of the test bench close to the material moving lifting cylinder, and a material lowering cylinder is connected to the end of the material lowering box, and the material lowering cylinder drives the material lowering box to move up and down.

[0010] Furthermore, the material receiving assembly comprises two symmetrically arranged material receiving boxes, each of which is provided with a material feed port.

[0011] Furthermore, a distribution board 7 is installed in the rack 1 .

[0012] The present invention provides an insulated gate bipolar transistor dynamic test device, which mainly includes a frame, a feeding assembly, a feeding assembly, a testing assembly and a receiving assembly. The feeding assembly, the feeding assembly, the testing assembly and the receiving assembly are all arranged on the frame, and the feeding assembly and the receiving assembly are respectively arranged at opposite ends of the frame. The feeding assembly is arranged along the length direction of the frame, and the feeding assembly is located between the feeding assembly and the receiving assembly. The feeding assembly is used to transport the workpiece in the feeding assembly, and the testing assembly is arranged on one side of the feeding assembly. The workpiece is put into position, and then transported to the testing assembly through the feeding assembly. If the test is qualified, the workpiece is received. If the test is qualified or not, the workpiece is sent to a material drop box, and the cycle is performed. Therefore, compared with the prior art, the present invention has the following advantages: each component is reasonably placed, occupies a small space, and the overall structure is more compact. At the same time, the test is fully automated, the test efficiency is high, and the test results are more accurate. It can realize large current (200-300A) online testing of the device. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Various other advantages and benefits will become apparent to those of ordinary skill in the art by reading the detailed description of the preferred embodiments below. The accompanying drawings are only for the purpose of illustrating the preferred embodiments and are not to be considered as limiting the present invention. Moreover, the same reference symbols are used throughout the accompanying drawings to represent the same components. In the accompanying drawings:

[0014] Figure 1A schematic structural diagram of an insulated gate bipolar transistor dynamic test device provided by an embodiment of the present invention;

[0015] Figure 2 A schematic structural diagram of a feeding assembly in an insulated gate bipolar transistor dynamic testing device provided by an embodiment of the present invention;

[0016] Figure 3 A schematic structural diagram of a feeding assembly in an insulated gate bipolar transistor dynamic testing device provided by an embodiment of the present invention;

[0017] Figure 4 A schematic diagram of the structure of a test component in an insulated gate bipolar transistor dynamic test device provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0018] The exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although the exemplary embodiments of the present disclosure are shown in the accompanying drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the embodiments set forth herein. On the contrary, these embodiments are provided to enable a more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

[0019] Embodiment 1:

[0020] See also Figures 1 to 4 , the figure shows an insulated gate bipolar transistor dynamic testing device provided by embodiment 1 of the present invention, which includes: a frame 1, a feeding component 2, a feeding component 3, a testing component 4 and a receiving component 5, the feeding component 2, the feeding component 3, the testing component 4 and the receiving component 5 are all arranged on the frame 1, the feeding component 2 and the receiving component 5 are respectively arranged at opposite ends of the frame 1, the feeding component 3 is arranged along the length direction of the frame 1, and the feeding component 3 is located between the feeding component 2 and the receiving component 5, the feeding component 3 is used to transport the workpiece 6 in the feeding component 2, and the testing component 5 is arranged on one side of the feeding component 3.

[0021] See also Figures 1 to 4The test assembly 4 includes two parallel test units 41, the test unit 41 includes a first guide rail 411, one end of the first guide rail 411 is provided with a material transfer lifting cylinder 412, the other end of the first guide rail 411 is provided with a material transfer motor 419, one side of the first guide rail 411 is slidably connected with a slide 413, the material transfer motor 419 drives the slide 413 to move forward and backward, the slide 413 is connected to a material transfer clamping cylinder 414, and the material transfer clamping cylinder 414 is connected to There is a clamping jaw 415, and a test bench 416 is arranged below the clamping jaw 415. The test bench 416 is used to test the workpiece 6. A material lowering box 417 is arranged on one side of the test bench 416 close to the material moving lifting cylinder 412. The end of the material lowering box 417 is connected to a material lowering cylinder 418. The material lowering cylinder 418 drives the material lowering box 417 to move up and down. The material receiving assembly 5 includes two symmetrically arranged material receiving boxes 51. A material feed port 52 is opened on the material receiving box 51. A distribution board 7 is installed in the frame 1.

[0022] The present invention provides an insulated gate bipolar transistor dynamic test device, which mainly includes a frame, a feeding assembly, a feeding assembly, a testing assembly and a receiving assembly. The feeding assembly, the feeding assembly, the testing assembly and the receiving assembly are all arranged on the frame, and the feeding assembly and the receiving assembly are respectively arranged at opposite ends of the frame. The feeding assembly is arranged along the length direction of the frame, and the feeding assembly is located between the feeding assembly and the receiving assembly. The feeding assembly is used to transport the workpiece in the feeding assembly, and the testing assembly is arranged on one side of the feeding assembly. The workpiece is put into position, and then transported to the testing assembly through the feeding assembly. If the test is qualified, the workpiece is received. If the test is qualified or not, the workpiece is sent to a material drop box, and the cycle is performed. Therefore, compared with the prior art, the present invention has the following advantages: each component is reasonably placed, occupies a small space, and the overall structure is more compact. At the same time, the test is fully automated, the test efficiency is high, and the test results are more accurate. It can realize large current (200-300A) online testing of the device.

[0023] The operation process is as follows: first manually load the material to the feed panel, the feed panel automatically feeds the material, then the test component is tested, the test component will reduce the defective products to the next level, and finally the material is collected.

[0024] The specific operation process is as follows:

[0025] Feeding assembly: The materials are manually placed on the feeding panel, and the modules are neatly pushed in through the screw rod and push plate at the upper end of the bracket. The feeding panel is made of smooth stainless steel to prevent scratches on the bottom of the product.

[0026] Feeding assembly: The device is fed into the belt conveyor driven by a variable frequency motor, and the cylinder at the end of the conveyor belt pushes the material into the test track. Then the robot selectively sends the device to the track corresponding to the test assembly according to the process requirements (send all or one). The duplex displacement device moves the device in and tests it, and then moves the device back after the test.

[0027] Test components: The test instrument uses the existing online instrument of the purchaser, and selects appropriate and reliable wires and connection methods. The test platform is insulated, heat-insulated and has a simple temperature control system. The temperature of the test piece is adjustable (the reference working temperature is 35℃±5℃). The test process between chips can be achieved by setting the module control terminal. When each station tests the device, all parameters of a single module must be tested at the same station. The system must have a record of the machine's historical test time, the number of good and defective products, for easy traceability.

[0028] Judging whether a device is good or bad: The dynamic tester takes out the forward and reverse leakage current and average voltage drop value of the device under a certain on-state current from the existing test instrument end, and determines the quality of the device under test according to the standard requirements of the parameter. Among them, the forward current and reverse leakage current values ​​can be adjusted.

[0029] Defective product collection device: Each test station is equipped with a defective product collection device. It can hold up to 12 defective products. When the material is full, an alarm will be sounded and the operator will take them away manually. The material tray is made of smooth stainless steel to prevent scratches on the bottom of the product.

[0030] Receiving assembly: Modules that have passed the previous test will be sent to the receiving tray. A buffer zone is set in front of the receiving tray so that the equipment operation will not be affected when the tray is collected. When the receiving tray is full, it will be taken away manually.

[0031] Embodiment 2:

[0032] See also Figures 1 to 4 , the figure shows an insulated gate bipolar transistor dynamic testing device provided by embodiment 2 of the present invention. On the basis of the above embodiments, this embodiment further makes the following improved technical solutions: the feeding component 2 includes a feeding panel 21 for placing the workpiece 6, and a discharge port 211 is arranged on the feeding panel 21. A longitudinal driving motor 22 is arranged on the side of the feeding panel 21 close to the discharge port 211. A push rod 221 is connected to the longitudinal driving motor 22. The longitudinal driving motor 22 drives the push rod 221 to push the workpiece 6 out of the discharge port 211. A transverse driving motor 23 is arranged at the bottom of the feeding panel 21. The transverse driving motor 23 drives the feeding panel 21 to move transversely, so that the workpiece can accurately enter the feeding component and improve work efficiency.

[0033] Embodiment three:

[0034] See also Figures 1 to 4, the figure shows an insulated gate bipolar transistor dynamic test device provided by the third embodiment of the present invention. On the basis of the above embodiments, this embodiment further makes the following improved technical solutions: the feeding assembly 3 includes multiple groups of linear guides 31 arranged along the length direction of the frame 1, and the linear guides 31 are installed with lifting cylinders 32. The tops of the multiple groups of linear guides 31 are connected with material transfer tracks 33, and the lower part of the material transfer tracks 33 is provided with a transfer slide 34. The end of the transfer slide 34 is provided with a horizontal drive motor 35 for driving the workpiece 6 to move. When the workpiece is in place, the lifting cylinder rises, the horizontal drive motor drives the workpiece to move right, the lifting cylinder drops, and the horizontal drive motor moves left, and so on. In this way, the workpiece can be fed into the test bench to improve work efficiency.

[0035] Obviously, those skilled in the art can make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include these modifications and variations.

Claims

1. An insulated gate bipolar transistor dynamic test device, characterized in that: include: A frame (1), a feeding assembly (2), a feeding assembly (3), a testing assembly (4) and a receiving assembly (5), wherein the feeding assembly (2), the feeding assembly (3), the testing assembly (4) and the receiving assembly (5) are all arranged on the frame (1), the feeding assembly (2) and the receiving assembly (5) are respectively arranged at opposite ends of the frame (1), the feeding assembly (3) is arranged along the length direction of the frame (1), and the feeding assembly (3) is located between the feeding assembly (2) and the receiving assembly (5), the feeding assembly (3) is used to transport the workpiece (6) in the feeding assembly (2), the testing assembly (5) is arranged on one side of the feeding assembly (3), the testing assembly (4) comprises two parallel testing units (41), the testing unit (41) comprises a first guide rail (411), the first A material transfer lifting cylinder (412) is provided at one end of the guide rail (411), and a material transfer motor (419) is provided at the other end of the first guide rail (411). A slide seat (413) is slidably connected to one side of the first guide rail (411), and the material transfer motor (419) drives the slide seat (413) to move forward and backward. A material transfer clamping cylinder (414) is connected to the slide seat (413), and a clamping claw (415) is connected to the material transfer clamping cylinder (414). A test bench (416) is provided below the clamping claw (415), and the test bench (416) is used to test the workpiece (6). A material lowering box (417) is provided on one side of the test bench (416) close to the material transfer lifting cylinder (412), and a material lowering cylinder (418) is connected to the end of the material lowering box (417), and the material lowering cylinder (418) drives the material lowering box (417) to move up and down.

2. The insulated gate bipolar transistor dynamic test device according to claim 1, characterized in that: The feeding assembly (2) comprises an inlet panel (21) for placing the workpiece (6), the inlet panel (21) being provided with an outlet (211), a longitudinal drive motor (22) being provided on a side of the inlet panel (21) close to the outlet (211), a push rod (221) being connected to the longitudinal drive motor (22), the longitudinal drive motor (22) driving the push rod (221) to push the workpiece (6) out of the outlet (211), a transverse drive motor (23) being provided at the bottom of the inlet panel (21), the transverse drive motor (23) driving the inlet panel (21) to move transversely.

3. The insulated gate bipolar transistor dynamic test device according to claim 1, characterized in that: The feeding assembly (3) comprises a plurality of groups of linear guide rails (31) arranged along the length direction of the frame (1), a lifting cylinder (32) being installed on the linear guide rails (31), a material transfer track (33) being connected to the top of the plurality of groups of linear guide rails (31), a transfer slide (34) being arranged below the material transfer track (33), and a horizontal drive motor (35) for driving the workpiece (6) to move being arranged at the end of the transfer slide (34).

4. The insulated gate bipolar transistor dynamic test device according to claim 1, characterized in that: The material receiving assembly (5) comprises two symmetrically arranged material receiving boxes (51), and a material feed port (52) is provided on the material receiving box (51).

5. The insulated gate bipolar transistor dynamic test device according to claim 1, characterized in that: A power distribution board (7) is installed in the frame (1).

Citation Information

Patent Citations

  • Dynamic testing device for insulated gate bipolar transistor

    CN212433326U