System and method for synchronously testing silicon carbide device and storage medium

Abstract

The invention provides a system and a method for synchronously testing a silicon carbide device, and a storage medium. The system comprises a selection module, a test switching module, a heating current switching module and a measurement current switching module, the selection module is used for installing a device needing to be tested and acquiring a detection signal after installation is completed; the test switching module receives the detection signal and provides starting voltage for the device according to the detection signal; the heating current switching module receives the detection signal and controls a corresponding relay to work according to the detection signal so as to realize conduction of a heating power supply circuit corresponding to each device and supply heating current to the device; the test switching module also receives the measurement signal and provides a measurement voltage for the device according to the measurement signal; and the measurement current switching module receives the measurement signal and controls the corresponding output switch to work according to the measurement signal so as to realize conduction of the measurement power supply circuit corresponding to each device and supply measurement current to the device. According to the invention, at least one type of devices can be tested at the same time.

Description

Technical Field

[0001] The present application relates to the field of silicon carbide technology, and in particular to a system, method and storage medium for synchronously testing silicon carbide devices. Background Art

[0002] MOS tubes are widely used in electronic circuits because of their high-speed switching capability and simple driving circuits, and IGBTs are widely used in electronic circuits because of their small on-resistance and low switching loss. In order to make MOS tubes and IGBTs work better in circuits, they need to be tested to determine their reliability before they are put into use in circuits. Among them, MOS tubes include NMOS tubes and PMOS tubes.

[0003] At present, intermittent test circuits are generally used to test NMOS tubes, PMOS tubes and IGBTs. However, different devices require different current directions for intermittent testing, which results in the need to adjust the corresponding test board and aging board each time the test is performed to make the circuit meet the test requirements of different devices. Only one type of device can be tested, and multiple types of devices cannot be tested at the same time. Summary of the invention

[0004] In order to simultaneously test at least one type of device, the embodiments of the present application provide a system, method and storage medium for synchronously testing silicon carbide devices.

[0005] In a first aspect, this embodiment provides a system for synchronously testing silicon carbide devices, the system comprising: a selection module, a test switching module, a heating current switching module and a measurement current switching module; wherein, The selection module is used to install the device to be tested and obtain the detection signal after the device is installed; The test switching module receives the detection signal and provides a startup voltage for the device according to the detection signal; The heating current switching module is used to receive the detection signal and control the corresponding relay to work according to the detection signal, so as to realize the conduction of the heating power supply circuit corresponding to each device and pass the heating current to the device; The test switching module also receives a measurement signal and provides a measurement voltage for the device according to the measurement signal; The measurement current switching module is used to receive the measurement signal and control the corresponding output switch to work according to the measurement signal, so as to realize the conduction of the measurement power supply circuit corresponding to each device and pass the measurement current to the device.

[0006] In some embodiments, the heating current switching module includes at least one heating current switching unit, each heating current switching unit includes a forward transistor control circuit and a corresponding forward relay, and a reverse transistor control circuit and a corresponding reverse relay; wherein, The collector of the transistor in the forward transistor control circuit is connected to the working power supply through a forward relay, and the collector of the transistor in the reverse transistor control circuit is connected to the working power supply through a reverse relay; The forward relay switch corresponding to the forward relay is used to control the on and off of the forward heating current, and the reverse relay switch corresponding to the reverse relay is used to control the on and off of the reverse heating current, wherein the forward relay switch and the reverse relay switch in the same heating current switching unit will not be in a closed state at the same time.

[0007] In some embodiments, each type of device corresponds to a detection sub-signal, the detection signal includes at least one detection sub-signal, and controlling the corresponding relay operation according to the detection signal includes: Determine whether the detection signal only includes the detection sub-signal corresponding to at least one type of device among the NMOS tube and the IGBT, and if so, control the transistor in the forward transistor control circuit in a heating current switching unit to be turned on based on the detection signal to make the forward relay work; If not, determine whether the detection signal only includes the detection sub-signal corresponding to the PMOS tube, and if so, control the transistor in the reverse transistor control circuit in a heating current switching unit to conduct based on the detection signal to make the reverse relay work; If not, based on the detection signal, the transistor in the forward transistor control circuit in one heating current switching unit is controlled to be turned on to make the forward relay work, and the transistor in the reverse transistor control circuit in another heating current switching unit is controlled to be turned on to make the reverse relay work.

[0008] In some embodiments, the measuring current switching module includes at least one measuring current switching unit, each measuring circuit switching unit includes a measuring transistor and a bidirectional output circuit, and the bidirectional output circuit includes a forward output switch and a reverse output switch; wherein, The collector of the transistor is connected to the input end of the bidirectional output circuit, and the transistor controls whether the bidirectional output circuit is in a standby state; When the bidirectional output circuit is in a standby state, the forward measuring current is turned on and off by the forward output switch, and the reverse measuring current is turned on and off by the reverse output switch, wherein the forward output switch and the reverse output switch in the same measuring current switching unit will not be closed at the same time.

[0009] In some embodiments, each type of device corresponds to a measurement sub-signal, the measurement sub-signals include at least one measurement sub-signal, and controlling the corresponding output switch operation according to the measurement signal includes: Determine whether the measurement signal only includes measurement sub-signals corresponding to at least one type of device among NMOS tubes and PMOS tubes; if so, control a transistor in a measurement current switching unit to be turned on and a forward output switch to be closed based on the measurement signal to pass a forward measurement current to the device; If not, determine whether the detection signal only includes the measurement sub-signal corresponding to the IGBT, and if so, control a transistor in a measurement current switching unit to be turned on and a reverse output switch to be closed based on the measurement signal to pass a reverse measurement current for the device; If not, based on the measurement signal, the transistor in a measurement current switching unit is controlled to be turned on and the forward output switch is closed to pass the forward measurement current to the NMOS tube and / or PMOS tube, and the transistor in another measurement current switching unit is controlled to be turned on and the reverse output switch is closed to pass the reverse current to the device.

[0010] In some of the embodiments, the system further comprises a temperature detection module; wherein, The temperature detection module is used to obtain the heating temperature of the device and determine whether the heating temperature reaches a preset heating temperature. If so, a measurement signal is sent to the measurement switching module.

[0011] In some of the embodiments, the system further comprises a cooling module; wherein, The temperature reduction module is used to work after receiving the measurement signal, so as to make the device work at a preset measurement temperature.

[0012] In a second aspect, this embodiment provides a method for synchronously testing a silicon carbide device, the method comprising: Obtaining a detection signal obtained after the device is installed, providing a starting voltage for the device according to the detection signal, and controlling the relay in the heating current switching module to work according to the detection signal, so as to realize the conduction of the heating power supply current corresponding to each device and pass the heating current to the device; Receive a measurement signal, send the measurement signal to the device, provide a measurement voltage for the device according to the measurement signal, and control the output switch in the measurement current switching module to operate according to the measurement signal, so as to realize the conduction of the measurement power supply circuit corresponding to each device and pass the measurement current to the device.

[0013] In some embodiments, the method further comprises: The heating temperature of the device is obtained, and it is determined whether the heating temperature reaches a preset heating temperature. If so, a measurement signal is received.

[0014] In a third aspect, this embodiment provides a computer-readable storage medium having stored thereon a computer program that can be run on a processor, wherein when the computer program is executed by the processor, a method for synchronously testing silicon carbide devices as described in the second aspect is implemented.

[0015] By adopting the above system, a system for synchronously testing silicon carbide devices includes a selection module, a test switching module, a heating current switching module and a measuring current switching module. Among them, the selection module is used to install the device to be tested and generate a detection signal after the device is installed. The test switching module receives the detection signal and provides a starting voltage for the device according to the detection signal. The heating current switching module is used to receive the detection signal and control the corresponding relay to work according to the detection signal to realize the conduction of the heating power supply circuit corresponding to each device and pass the heating current to the device. The test switching module also receives the measurement signal and provides the measurement voltage to the device according to the measurement signal. The measuring current switching module is used to receive the measurement signal and control the corresponding output switch to work according to the measurement signal to realize the conduction of the measurement power supply circuit corresponding to each device and pass the measurement current to the device. In this way, when testing the device, there is no need to adjust the corresponding test board and aging board so that the circuit meets the test requirements of different devices. The devices to be tested can be installed directly to test these devices at the same time, so as to realize the simultaneous testing of at least one type of device. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 It is a schematic diagram of the principle of performing NMOS tube device testing provided in an embodiment of the present application.

[0017] Figure 2 It is a schematic diagram of the principle of testing a PMOS tube device provided in an embodiment of the present application.

[0018] Figure 3 It is a schematic diagram of the principle of performing IGBT device testing provided in an embodiment of the present application.

[0019] Figure 4 This is a schematic diagram of system connections for synchronously testing silicon carbide devices provided in an embodiment of the present application.

[0020] Figure 5 It is a working diagram of the test switching module provided in an embodiment of the present application.

[0021] Figure 6 It is a working schematic diagram of the heating current switching module provided in an embodiment of the present application.

[0022] Figure 7 This is a working diagram of the measurement current switching module provided in an embodiment of the present application.

[0023] Figure 8 This is a block diagram of a method for synchronously testing silicon carbide devices provided in an embodiment of the present application.

[0024] Reference numerals: 1. Selection module; 2. Test switching module; 21. Conducting circuit; 22. Operational amplifier circuit; 3. Heating current switching module; 31. Heating current switching unit; 311. Forward transistor control circuit; 312. Forward relay; 313. Reverse transistor control circuit; 314. Reverse relay; 32. Device heating selection unit; 4. Measuring current switching module; 41. Measuring current switching unit; 411. Measuring transistor; 412. Bidirectional output circuit; 4121. Forward output switch; 4122. Reverse output switch; 42. Device measurement selection unit. DETAILED DESCRIPTION

[0025] In order to more clearly understand the purpose, technical solutions and advantages of the present application, the present application is described and illustrated below in conjunction with the accompanying drawings and embodiments. However, it should be understood by those of ordinary skill in the art that the present application can be implemented without these details. For those of ordinary skill in the art, it is obvious that various changes can be made to the embodiments disclosed in the present application, and without departing from the principles and scope of the present application, the general principles defined in the present application can be applied to other embodiments and application scenarios. Therefore, the present application is not limited to the embodiments shown, but conforms to the broadest scope consistent with the scope claimed for protection in the present application.

[0026] The embodiments of the present application are further described in detail below in conjunction with the drawings in the specification.

[0027] When performing reliability testing on a silicon carbide device, it is necessary to first apply a heating current to the silicon carbide device to heat the silicon carbide device so that the temperature of the silicon carbide device reaches a preset heating temperature; then the silicon carbide device is cooled down and a measuring current is applied to measure the parameters of the silicon carbide device.

[0028] Figure 1 It is a schematic diagram of the principle of performing NMOS tube device testing provided in an embodiment of the present application. Figure 2 It is a schematic diagram of the principle of testing a PMOS tube device provided in an embodiment of the present application. Figure 3 Schematic diagram of the principle of testing an IGBT device provided in an embodiment of the present application. Figures 1 to 3As shown, when performing an NMOS tube reliability test, the direction of the heating current applied to the NMOS tube is from the outside to the inside, and the direction of the applied measuring current is from the outside to the inside. When performing a PMOS tube reliability test, the direction of the heating current applied to the PMOS tube is from the inside to the outside, and the direction of the applied measuring current is from the outside to the inside. When performing an IGBT reliability test, the direction of the heating current applied to the IGBT tube is from the outside to the inside, and the direction of the applied measuring current is from the inside to the outside. Therefore, different devices require different current directions to be input when testing. This application is directed to three types of silicon carbide devices, namely, NMOS tubes, PMOS tubes and IGBTs, to achieve how to test at least one type of silicon carbide device at the same time.

[0029] Figure 4 1 is a schematic diagram of a system connection for synchronously testing silicon carbide devices provided in an embodiment of the present application. Figure 4 As shown, a system for synchronously testing silicon carbide devices includes a selection module 1 , a test switching module 2 , a heating current switching module 3 and a measurement current switching module 4 .

[0030] Among them, the selection module 1 is used to install the device to be tested, and obtain the detection signal after the device is installed. The selection module 1 includes three installation units: an NMOS tube installation unit, a PMOS tube installation unit, and an IGBT installation unit. The NMOS tube installation unit provides an installation position for the NMOS tube to be tested, the PMOS tube installation unit provides an installation position for the PMOS tube to be tested, and the IGBT installation unit provides an installation position for the IGBT to be tested. Each installation unit provides at least one position where a device can be installed. After a device is installed, the staff sends a detection sub-signal corresponding to each installed device according to the installed device, so that after all the devices to be tested are installed, the selection module 1 obtains a detection signal containing at least one detection sub-signal. For example, after the NMOS tube is installed, the selection module 1 will obtain a detection sub-signal corresponding to a silicon carbide device of the type of NMOS tube. After the PMOS tube is installed, the selection module 1 will obtain a detection sub-signal corresponding to a silicon carbide device of the type of PMOS tube. After the IGBT is installed, the selection module 1 will obtain a detection sub-signal corresponding to a silicon carbide device of the type of IGBT. The user may install corresponding silicon carbide devices in the selection module 1 according to actual needs. No further limitation is made here on which device or devices are installed in the selection module 1 and the number of installed devices.

[0031] The test switching module 2 receives the detection signal and provides a startup voltage for the device according to the detection signal. Figure 5Schematic diagram of the test switching module provided in the embodiment of the present application. Figure 5 As shown, the test switching module 2 includes a conduction circuit 21 and an operational amplifier circuit 22. The conduction circuit 21 receives the detection signal, thereby outputting a positive voltage, and sending the positive voltage to the positive input terminal of the operational amplifier A. Under the action of the operational amplifier A, the operational amplifier A outputs a startup voltage through its output terminal, thereby connecting the output terminal of the operational amplifier A to the gate of the device to provide a startup voltage for the device.

[0032] The heating current switching module 3 is used to receive the detection signal, and control the corresponding relay to work according to the detection signal, so as to realize the conduction of the heating power supply circuit corresponding to each device, and pass the heating current to the device. The heating current switching module 3 includes at least one heating current switching unit 31 and a device heating selection unit 32, and each heating current switching unit 31 includes a forward triode control circuit 311 and a corresponding forward relay 312, and a reverse triode control circuit 313 and a corresponding reverse relay 314. One end of each device heating selection unit 32 is respectively connected to the forward relay switch KM1-1 and the reverse relay switch KM2-1, and the other end is connected to the connector at the device position in the selection module. Each device heating selection unit 32 is provided with an optical coupler, that is, any switch in the forward relay switch KM1-1 and the reverse relay switch KM2-1 is closed, which will make the optical coupler work, so that the device heating selection unit 32 works. All device heating selection units 32 are in parallel. The device heating switching unit 32 is used to switch the connection between the device and each heating current switching unit 31. The number of the device heating selection units 32 is the same as the number of devices that can be installed in the selection module 1 , so that each position where a device can be installed corresponds to a device heating selection unit 32 . Figure 6 Schematic diagram of the operation of the heating current switching module provided in the embodiment of the present application. Figure 6 As shown, the collector of the transistor Q1 in the forward transistor control circuit 311 in each heating current switching unit 31 is connected to the working power supply VDD through the forward relay 312, and the forward relay switch KM1-1 corresponding to the forward relay 312 is used to control the on and off of the forward heating current. If the transistor Q1 in the forward transistor control circuit 311 is turned on, the forward relay 312 is energized, so that the forward relay switch KM1-1 is closed, and the forward heating current is turned on. Then, the heating current can be turned on for the device through the device heating selection unit 32 that is turned on.

[0033] The collector of the transistor Q2 in the reverse transistor control circuit 313 in each heating current switching unit 31 is connected to the working power supply through the reverse relay 314, and the reverse relay switch KM2-1 corresponding to the reverse relay 314 is used to control the on and off of the reverse heating current. If the transistor Q2 in the reverse transistor control circuit 313 is turned on, then the reverse relay 314 is energized, so that the reverse relay switch KM2-1 is closed, and the reverse heating current is turned on. Then, the heating current can be passed to the device through the device heating selection unit 32 that is turned on. Among them, the transistor Q1 in the forward transistor control circuit 311 and the transistor Q2 in the reverse transistor control circuit 314 will not be turned on at the same time in the same heating current switching unit 31.

[0034] Each type of device corresponds to a detection sub-signal, and the detection signal includes at least one detection sub-signal. Controlling the corresponding relay operation according to the detection signal includes the following steps: Step S10, determining whether the detection signal only contains detection sub-signals corresponding to at least one type of device among NMOS tubes and IGBTs, and if so, controlling the transistor in a forward transistor control circuit in a heating current switching unit to conduct based on the detection signal to enable the forward relay to work.

[0035] Step S20, if not, determine whether the detection signal only includes the detection sub-signal corresponding to the PMOS tube, and if so, control the transistor in the reverse transistor control circuit in a heating current switching unit to turn on based on the detection signal to enable the reverse relay to work.

[0036] Step S30, if not, based on the detection signal, control the transistor in the forward transistor control circuit in one heating current switching unit to turn on so that the forward relay works, and control the transistor in the reverse transistor control circuit in another heating current switching unit to turn on so that the reverse relay works.

[0037] If each installation unit in the selection module 1 is installed with a device, then the installation unit will obtain a detection sub-signal corresponding to the installation unit.

[0038] Since the heating current required by the NMOS tube and the IGBT has the same direction, which is a forward heating current, that is, from the outside to the inside, and the heating current direction required by the PMOS tube is different from the heating current direction required by the NMOS tube and the IGBT, which is a reverse heating current, that is, from the inside to the outside. Therefore, when the detection signal only contains the detection sub-signal corresponding to at least one type of device in the NMOS tube and the IGBT, it indicates that the device to be tested has the same demand for the direction of the heating current, which is the forward direction, that is, from the outside to the inside. At this time, it is only necessary to make a heating current switching unit 31 work, and the detection signal is sent to the input end of the forward transistor control circuit 311 in a heating current switching unit 31, so that the transistor Q1 is turned on, the forward relay 312 works, and the forward relay switch KM1-1 is closed. And the device heating selection unit 32 corresponding to the installed device is turned on, and the heating current can be passed to the device.

[0039] Or when the detection signal contains only the detection sub-signal corresponding to one type of device, the PMOS tube, it indicates that the devices to be tested have the same requirements for the direction of the heating current, which is reverse, that is, from the inside to the outside. At this time, only one heating current switching unit 31 needs to be operated. At this time, the detection signal is sent to the input end of the reverse transistor control circuit 313 in the heating current switching unit 31, so that the transistor Q2 is turned on, the reverse relay 314 is operated, and the reverse relay switch KM2-1 is closed. And the device heating selection unit 32 corresponding to the installed device is turned on, so that the heating current can be passed to the device.

[0040] Or when the detection signal includes detection sub-signals corresponding to a PMOS tube and at least one type of device among an NMOS tube and an IGBT, it indicates that the device to be tested has different requirements for the direction of the heating current, both forward and reverse, that is, both from the inside to the outside and from the outside to the inside. At this time, only one heating current switching unit 31 cannot work, and two heating current switching units 31 need to work simultaneously, wherein the detection signal is sent to the input end of the forward transistor control circuit 311 in one of the heating current switching units 31, so that the transistor Q1 is turned on, the forward relay 312 works, the forward relay switch KM1-1 is closed, and the device heating selection unit 21 corresponding to the NMOS tube and / or IGBT is turned on, so that the heating current can be passed for the NMOS tube and / or IGBT therein; and the detection signal is also sent to the input end of the reverse transistor control circuit 313 in the other heating current switching unit 31, so that the transistor Q2 is turned on, the reverse relay 314 works, the reverse relay switch KM2-1 is closed, and the device heating selection unit 32 corresponding to the PMOS tube is turned on, so that the heating current can be passed for the PMOS tube therein. In this way, the corresponding heating current can be provided when at least one type of device is tested simultaneously, without adjusting the corresponding board.

[0041] A system for synchronously testing silicon carbide devices also includes a temperature detection module, wherein the temperature detection module is used to obtain the heating temperature of the device, determine whether the heating temperature reaches the preset heating temperature, and if so, send a measurement signal to the measurement switching module; if not, continue to control the corresponding relay to work according to the detection signal. In this way, the temperature detection device is used to assist in determining whether the device has completed the heating work, making the heating work more accurate.

[0042] The test switching module 2 also receives the measurement signal and sends the measurement signal to the device to provide the device with a measurement voltage. After determining that the heating temperature reaches the preset heating temperature, the temperature detection module generates a measurement signal and sends it to the test switching module 2, so that the test switching module 2 receives the measurement signal, thereby causing the conduction circuit to output a negative voltage, the op amp A to be in a follow state, and the output end of the op amp A to output the measurement voltage, thereby causing the device to be in a non-conducting state.

[0043] The measuring current switching module 4 is used to receive the measuring signal and control the corresponding output switch to work according to the measuring signal, so as to realize the conduction of the measuring power supply circuit corresponding to each device and pass the measuring current to the device. The measuring current switching module 4 includes at least one measuring current switching unit 41 and one device measurement selection module 42. Each measuring current switching unit 41 includes a measuring transistor 411 and a bidirectional output circuit 412. The bidirectional output circuit 412 includes a forward output switch 4121 and a reverse output switch 4122. One end of each device measurement selection unit 42 is respectively connected to the output terminal OUT, and the other end is connected to the drain of the device.

[0044] Each device measurement selection unit 42 is internally provided with an optocoupler, that is, when the output terminal OUT has information output, the optocoupler will work, so that the device measurement selection unit 42 works. All device measurement selection modules 42 are in a parallel relationship. The device measurement switching unit 42 is used to switch the connection between the device and each measurement current switching unit 441. Among them, the number of device measurement selection units 42 is the same as the number of device heating selection units 32, so that each position where a device can be installed corresponds to a device measurement selection unit 42. Figure 7 Schematic diagram of the current measurement switching module provided in the embodiment of the present application. Figure 7 As shown, the collector of the measuring transistor 411 is connected to the input end of the bidirectional output circuit 412, and the measuring transistor 411 controls whether the bidirectional output circuit 412 is in a waiting state. When the bidirectional output circuit 412 is in a waiting state, the forward measuring current is controlled by the forward output switch 4121, and the reverse measuring current is controlled by the reverse output switch 4122. The base of the measuring transistor 411 in each measuring current switching unit 41 is used to receive the measuring signal, the emitter is grounded, the collector is connected to the input end IN of the bidirectional output circuit 412, and the output end OUT of the bidirectional output circuit 412 is connected to the drain S of the device. After the base of the measuring transistor 411 receives the measuring signal, the measuring transistor 411 is turned on, and the forward output switch 4121 is closed or the reverse output switch 4122 is closed according to the device type corresponding to the measuring signal, so as to provide the device with a forward measuring current or a reverse measuring current through the output end OUT. Then, the device selection unit 42 that is turned on can pass the measurement current to the device. When the forward output switch 4121 is closed, the output terminal OUT will output the forward measurement current; when the reverse output switch 4122 is closed, the output terminal OUT will output the reverse measurement current. The forward output switch 4121 and the reverse output switch 4122 in the same bidirectional output circuit 412 will not be in the closed state at the same time.

[0045] Each type of device corresponds to a measurement sub-signal, and the measurement sub-signal includes at least one measurement sub-information. Controlling the corresponding output switch according to the measurement signal includes the following steps: Step S40, determine whether the measurement signal only includes measurement sub-signals corresponding to at least one type of device among NMOS tubes and PMOS tubes. If so, control a transistor in a measurement current switching unit to turn on and a forward output switch to close based on the measurement signal to pass a forward measurement current to the device.

[0046] Step S50, if not, determine whether the detection signal only includes the measurement sub-signal corresponding to the IGBT, if so, control a transistor in a measurement current switching unit to conduct and a reverse output switch to close based on the measurement signal to pass a reverse measurement current for the device.

[0047] Step S60, if not, based on the measurement signal, control the transistor in a measurement current switching unit to be turned on and the forward output switch to be closed to pass the forward measurement current for the NMOS tube and / or PMOS tube, and control the transistor in another measurement current switching unit to be turned on and the reverse output switch to be closed to pass the reverse current for the device.

[0048] Each measurement sub-signal corresponds to a device type. Since the measurement current required by the NMOS tube and the PMOS tube has the same direction, it is a forward measurement current, that is, from the outside to the inside, and the measurement current direction required by the IGBT is different from the measurement current direction required by the NMOS tube and the IGBT, it is a reverse measurement current, that is, from the inside to the outside. Therefore, when the measurement signal only contains the measurement sub-signal corresponding to at least one type of device of the NMOS tube and the PMOS tube, it indicates that the devices to be tested have the same release requirements for the measurement current, which are all forward, that is, from the outside to the inside. At this time, it is only necessary to make a measurement current switching unit 41 work. At this time, the measurement signal is sent to the base of the measurement transistor 411 in the measurement current switching unit 41 and the device used to control the forward output switch 4121, so that the measurement transistor 411 is turned on and the forward output switch 4121 is closed, so that the bidirectional output circuit 412 is turned on, and the device measurement selection unit 42 corresponding to the installed device is turned on, so that the forward measurement current can be passed for the device.

[0049] Or when the measurement signal contains only the measurement sub-signal corresponding to one type of device, IGBT, it indicates that the devices to be tested have the same demand direction for the measurement current, which is reverse, that is, from the inside to the outside. At this time, only one measurement current switching unit 41 needs to be operated. At this time, the measurement signal is sent to the base of the measurement transistor 411 in the measurement current switching unit 41 and the device used to control the reverse output switch 4122, so that the measurement transistor 411 is turned on and the reverse output switch 4122 is closed, so that the bidirectional output circuit 412 is turned on, and the device measurement selection unit 42 corresponding to the installed device is turned on, so that the reverse measurement current can be passed for the device.

[0050] Or when the measurement signal includes measurement sub-signals corresponding to IGBT and at least one type of device among NMOS tube and PMOS tube, it indicates that the device to be tested has different release requirements for the measurement current, both in forward and reverse directions, that is, both from inside to outside and from outside to inside. At this time, only one measuring current switching unit 41 cannot work, and two measuring current switching units 41 need to be used to work simultaneously, wherein the measuring signal is sent to the base of the measuring transistor 411 in one of the measuring current switching units 41 and the device used to control the forward output switch 4121, so that the measuring transistor 411 is turned on and the forward output switch 4121 is closed, and this bidirectional output circuit 412 is turned on, and the device measurement selection unit 42 corresponding to the NMOS tube and / or the PMOS tube is turned on, so that the forward measurement current can be passed for the NMOS tube and / or the PMOS tube; and the measuring signal is also sent to the base of the measuring transistor 411 in the other measuring current switching unit 41 and the device used to control the reverse output switch 4122, so that the measuring transistor 411 is turned on and the reverse output switch 4122 is closed, and this bidirectional output circuit 412 is turned on, and the device measurement selection unit 42 corresponding to the IGBT is turned on, so that the reverse measurement current can be passed for the IGBT. This means that when testing devices, there is no need to adjust the corresponding test boards and aging boards to make the circuits meet the testing requirements of different devices. The devices to be tested can be installed directly and tested simultaneously, thereby achieving simultaneous testing of at least one type of device.

[0051] In addition, a system for synchronously testing silicon carbide devices also includes a cooling module, wherein the cooling module is used to work after receiving a measurement signal to make the device work at a preset measurement temperature. The test signal is sent to the measurement current switching module and the cooling module at the same time, so that while the measurement current is passed through the device, the device is also cooled, so as to obtain the test parameters of the device more accurately.

[0052] Figure 81 is a block diagram of a method for synchronously testing silicon carbide devices provided in an embodiment of the present application. Figure 8 The method for synchronously testing a silicon carbide device comprises the following steps: Step S100, obtain the detection signal obtained after the device is installed, provide the device with a starting voltage according to the detection signal, and control the relay in the heating current switching module according to the detection signal to realize the conduction of the heating power supply current corresponding to each device and pass the heating current to the device.

[0053] Step S200, receiving a measurement signal, sending the measurement signal to the device, providing a measurement voltage for the device according to the measurement signal, and controlling the output switch in the measurement current switching module to operate according to the measurement signal, so as to realize the conduction of the measurement power supply circuit corresponding to each device and pass the measurement current for the device.

[0054] This means that when testing devices, there is no need to adjust the corresponding test boards and aging boards to make the circuits meet the testing requirements of different devices. The devices to be tested can be installed directly and tested simultaneously, thereby achieving simultaneous testing of at least one type of device.

[0055] In addition, a method for synchronously testing a silicon carbide device also includes: obtaining a heating temperature of the device, determining whether the heating temperature reaches a preset heating temperature, and if so, receiving a measurement signal.

[0056] The technical details in the above-mentioned method for synchronously testing silicon carbide devices are the same as or similar to the corresponding features in the system for synchronously testing silicon carbide devices described above, so they are not repeated here.

[0057] An embodiment of the present application further provides a computer storage medium having a computer program stored thereon. When the computer storage medium is run on a computer, the computer can execute the steps in the method for synchronously testing a silicon carbide device described above.

[0058] It should be understood that, although the steps in the flowchart of the accompanying drawings are shown in sequence according to the instructions of the arrows, these steps are not necessarily performed in the order indicated by the arrows. Unless explicitly stated in this document, the execution of these steps is not strictly limited in order and can be performed in other orders.

[0059] The above description is only a partial implementation method of the present application. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principles of the present application. These improvements and modifications should also be regarded as the scope of protection of the present application.

Claims

1. A system for synchronously testing silicon carbide devices, characterized in that: The system comprises: a selection module, a test switching module, a heating current switching module and a measurement current switching module; wherein, The selection module is used to install the device to be tested and obtain the detection signal after the device is installed; The test switching module receives the detection signal and provides a startup voltage for the device according to the detection signal; The heating current switching module is used to receive the detection signal and control the corresponding relay to work according to the detection signal, so as to realize the conduction of the heating power supply circuit corresponding to each device and pass the heating current to the device; The test switching module also receives a measurement signal and provides a measurement voltage for the device according to the measurement signal; The measurement current switching module is used to receive the measurement signal and control the corresponding output switch to work according to the measurement signal, so as to realize the conduction of the measurement power supply circuit corresponding to each device and pass the measurement current to the device.

2. The system according to claim 1, characterized in that The heating current switching module includes at least one heating current switching unit, each heating current switching unit includes a forward transistor control circuit and a corresponding forward relay, and a reverse transistor control circuit and a corresponding reverse relay; wherein, The collector of the transistor in the forward transistor control circuit is connected to the working power supply through a forward relay, and the collector of the transistor in the reverse transistor control circuit is connected to the working power supply through a reverse relay; The forward relay switch corresponding to the forward relay is used to control the on and off of the forward heating current, and the reverse relay switch corresponding to the reverse relay is used to control the on and off of the reverse heating current, wherein the forward relay switch and the reverse relay switch in the same heating current switching unit will not be in a closed state at the same time.

3. The system according to claim 2, characterized in that Each type of device corresponds to a detection sub-signal, the detection signal includes at least one detection sub-signal, and controlling the corresponding relay operation according to the detection signal includes: Determine whether the detection signal only includes the detection sub-signal corresponding to at least one type of device among the NMOS tube and the IGBT, and if so, control the transistor in the forward transistor control circuit in a heating current switching unit to be turned on based on the detection signal to make the forward relay work; If not, determine whether the detection signal only includes the detection sub-signal corresponding to the PMOS tube, and if so, control the transistor in the reverse transistor control circuit in a heating current switching unit to conduct based on the detection signal to make the reverse relay work; If not, based on the detection signal, the transistor in the forward transistor control circuit in one heating current switching unit is controlled to be turned on to make the forward relay work, and the transistor in the reverse transistor control circuit in another heating current switching unit is controlled to be turned on to make the reverse relay work.

4. The system according to claim 1, characterized in that The measuring current switching module includes at least one measuring current switching unit, each measuring circuit switching unit includes a measuring transistor and a bidirectional output circuit, and the bidirectional output circuit includes a forward output switch and a reverse output switch; wherein, The collector of the transistor is connected to the input end of the bidirectional output circuit, and the transistor controls whether the bidirectional output circuit is in a standby state; When the bidirectional output circuit is in a standby state, the forward measuring current is turned on and off by the forward output switch, and the reverse measuring current is turned on and off by the reverse output switch, wherein the forward output switch and the reverse output switch in the same measuring current switching unit will not be closed at the same time.

5. The system according to claim 4, characterized in that Each type of device corresponds to a measurement sub-signal, the measurement sub-signals include at least one measurement sub-signal, and controlling the corresponding output switch operation according to the measurement signal includes: Determine whether the measurement signal only includes measurement sub-signals corresponding to at least one type of device among NMOS tubes and PMOS tubes; if so, control a transistor in a measurement current switching unit to be turned on and a forward output switch to be closed based on the measurement signal to pass a forward measurement current to the device; If not, determine whether the detection signal only includes the measurement sub-signal corresponding to the IGBT, and if so, control a transistor in a measurement current switching unit to be turned on and a reverse output switch to be closed based on the measurement signal to pass a reverse measurement current for the device; If not, based on the measurement signal, the transistor in a measurement current switching unit is controlled to be turned on and the forward output switch is closed to pass the forward measurement current to the NMOS tube and / or PMOS tube, and the transistor in another measurement current switching unit is controlled to be turned on and the reverse output switch is closed to pass the reverse current to the device.

6. The system according to claim 1, characterized in that The system also includes a temperature detection module; wherein, The temperature detection module is used to obtain the heating temperature of the device and determine whether the heating temperature reaches a preset heating temperature. If so, a measurement signal is sent to the measurement switching module.

7. The system according to claim 6, characterized in that The system also includes a cooling module; wherein, The temperature reduction module is used to work after receiving the measurement signal, so as to make the device work at a preset measurement temperature.

8. A method for synchronously testing a silicon carbide device, characterized in that: The method comprises: Obtaining a detection signal obtained after the device is installed, providing a starting voltage for the device according to the detection signal, and controlling the relay in the heating current switching module to work according to the detection signal, so as to realize the conduction of the heating power supply current corresponding to each device and pass the heating current to the device; Receive a measurement signal, send the measurement signal to the device, provide a measurement voltage for the device according to the measurement signal, and control the output switch in the measurement current switching module to operate according to the measurement signal, so as to realize the conduction of the measurement power supply circuit corresponding to each device and pass the measurement current to the device.

9. The method according to claim 1, characterized in that: The method further comprises: The heating temperature of the device is obtained, and it is determined whether the heating temperature reaches a preset heating temperature. If so, a measurement signal is received.

10. A computer-readable storage medium having a computer program that can be run on a processor stored thereon, characterized in that: When the computer program is executed by the processor, the method for synchronously testing a silicon carbide device as claimed in any one of claims 8 to 9 is implemented.

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