Optoelectronic device, chip, and chip manufacturing method

Abstract

The present invention provides an optoelectronic device, a chip and a chip manufacturing method. The device includes: a photodiode chip and a circuit frequency doubling module, and the photodiode chip is electrically connected to the circuit frequency doubling module; the circuit frequency doubling module includes: a frequency doubling circuit connected to the output end of the photodiode chip for increasing the frequency of the output signal of the photodiode chip; and a frequency selection circuit connected to the output end of the frequency doubling circuit for screening signals with different frequencies output by the frequency doubling circuit. The optoelectronic device provided by the present invention solves the problem that the production cost of high-frequency optoelectronic devices in the prior art is high, resulting in very expensive prices and not meeting the market application requirements.

Description

Technical Field

[0001] This application relates to the field of optoelectronic communication technologies, and particularly to an optoelectronic device, a chip, and a chip manufacturing method. Background Art

[0002] With the rapid development of technologies, the demand and application of high-speed photodetectors in the optical communication market are becoming more and more extensive. For example, 10 Gb / s APDs are mainly used in optical transmission systems with a distance greater than 40 km and in the rapidly growing 10G E-PON.

[0003] However, the high-frequency optoelectronic chips in high-speed photodetectors are very complex in structural design and production processes, and have high costs in production, coupling, and packaging, resulting in very high market prices. Therefore, their scope of use is relatively limited.

[0004] It can be seen that the production costs of high-frequency optoelectronic devices in the prior art are high, resulting in very high prices and not meeting the application requirements. Summary of the Invention

[0005] To solve the above technical problems, this application provides an optoelectronic device, a chip, and a chip manufacturing method, which solve the problem that the production costs of high-frequency optoelectronic devices in the prior art are high, resulting in very high prices and not meeting the application requirements.

[0006] In a first aspect, the present invention provides an optoelectronic device, which includes: a photodiode chip and a circuit frequency doubling module. The photodiode chip is electrically connected to the circuit frequency doubling module. The circuit frequency doubling module includes: a frequency doubling circuit connected to the output end of the photodiode chip for increasing the frequency of the output signal of the photodiode chip; and a frequency selection circuit connected to the output end of the frequency doubling circuit for screening signals of different frequencies output by the frequency doubling circuit.

[0007] Optionally, the frequency selection circuit includes: a frequency selection capacitor connected to the output end of the frequency doubling circuit; and a frequency selection coupling transformer. The first end of the primary side of the frequency selection coupling transformer is connected to the first end of the frequency selection capacitor, and the second end of the primary side of the frequency selection coupling transformer is connected to the second end of the frequency selection capacitor. The secondary side of the frequency selection coupling transformer is the output end.

[0008] Optionally, the frequency doubling circuit includes: a diode. The anode of the diode is connected to the output end of the photodiode chip, and the cathode of the diode is connected to the first end of the frequency selection capacitor.

[0009] Optionally, the frequency doubling circuit further includes: a triode, the base of the triode is connected to the output end of the photodiode chip, the emitter of the triode is grounded, and the collector of the triode is connected to the second end of the frequency selection capacitor.

[0010] Optionally, the frequency doubling circuit further includes: a frequency doubling capacitor, the first end of the frequency doubling capacitor is connected to the output end of the photodiode chip, and the second end of the frequency doubling capacitor is connected to the base of the triode.

[0011] Optionally, the photodiode chip includes: a polyimide film, and the thickness of the polyimide film is greater than 2um and less than 10um.

[0012] In a second aspect, the present invention provides a chip, the chip includes: a substrate, a buffer layer formed on the substrate, an absorption layer formed on the buffer layer, a transition layer formed on the absorption layer, a field control layer formed on the transition layer, a top layer formed on the field control layer, a contact layer formed on the top layer, an N electrode formed at the bottom of the substrate, a Zn diffusion region formed in the contact layer, the top layer and the field control layer, a passivation film formed on the contact layer, an antireflection film formed on the Zn diffusion region, and a P electrode formed on the Zn diffusion region, the passivation film and the antireflection film. The Zn diffusion region is formed by secondary diffusion through a Zn diffusion process. The Zn diffusion region includes a multiplication region in the middle and a Zn diffusion ring on the periphery. The diffusion depth of the Zn diffusion ring is greater than the diffusion depth of the multiplication region. A polyimide film is formed between the antireflection film and the P electrode.

[0013] Optionally, the substrate is an n-type semi-insulating InP substrate; the buffer layer is an InP buffer layer with a doping concentration greater than 2.5X10 17 cm -3 The thickness of the buffer layer is greater than 0.8 and less than 1.5um; the absorption layer is an InGaAs absorption layer with a doping concentration lower than 5X10 14 cm -3 The thickness of the absorption layer is greater than 1.5um and less than 2.5um; the transition layer is an InGaAsP transition layer, and the cut-off wavelengths of the transition layer are 1.45um, 1.25um and 1.05um respectively. The thickness of the transition layer is greater than 0.05um and less than 0.15um; the field control layer is an InP field control layer with a doping concentration greater than 1.6X10 17 cm -3 The thickness of the field control layer is greater than 0.15um and less than 0.25um; the top layer is an InP top layer with a doping concentration less than 1X10 15 cm -3The top layer of InP, the thickness of the top layer is greater than 3.5 um and less than 4.5 um; the contact layer is an InGaAsP contact layer, the thickness of the contact layer is greater than 0.2 um and less than 0.35 um, and the cut-off wavelength of the contact layer is 1.05 um.

[0014] Optionally, the thickness of the polyimide film is greater than 2 um and less than 10 um.

[0015] In a third aspect, the present invention provides a method for fabricating a chip, the method comprising: providing a substrate, and sequentially depositing and forming a buffer layer, an absorption layer, a transition layer, a field control layer, a top layer and a contact layer on the substrate by metalorganic chemical vapor deposition; forming a passivation film on the contact layer by plasma enhanced chemical vapor deposition, and fabricating a first annular window on the passivation film to form a first diffusion region, and performing a first diffusion in the first diffusion region by a Zn diffusion process; removing the passivation film within the first annular window to form a second diffusion region, and performing a second diffusion in the second diffusion region by a Zn diffusion process to form a Zn diffusion region, the Zn diffusion region including a multiplication region located in the middle and a Zn diffusion ring located on the periphery, and the diffusion depth of the Zn diffusion ring is greater than the diffusion depth of the multiplication region; fabricating a polyimide film on the passivation film; depositing and forming an antireflection film on the diffusion region, the passivation film and the polyimide film; fabricating an annular window on the antireflection film to form a contact region between the chip P electrode and the chip Zn diffusion region; forming a P electrode on the contact region and forming an N electrode at the bottom of the substrate.

[0016] The above technical solutions provided by the embodiments of the present invention have the following advantages compared with the prior art:

[0017] The present invention provides an optoelectronic device, a chip, and a chip manufacturing method. The device includes: a photodiode chip and a circuit frequency doubling module, where the photodiode chip is electrically connected to the circuit frequency doubling module; the circuit frequency doubling module includes: a frequency doubling circuit connected to the output end of the photodiode chip for increasing the frequency of the output signal of the photodiode chip; and a frequency selection circuit connected to the output end of the frequency doubling circuit for screening signals of different frequencies output by the frequency doubling circuit. The photodetector provided by the present invention increases the frequency of the output signal of the low-frequency photodiode chip through the frequency doubling circuit, and then screens the output signal of the frequency doubling circuit to obtain a high-frequency signal corresponding to a certain multiple, so as to achieve the high-frequency signal output by other high-frequency optoelectronic chips, meeting the application requirements in the corresponding high-frequency field of the photodetector. Moreover, the optoelectronic device of the present invention combines a low-frequency photodiode chip and a frequency doubling circuit, with low production and packaging costs, simple process, good reliability, low price, and wide application range. Therefore, the present invention solves the problem in the prior art that the production cost of high-frequency optoelectronic devices is high, resulting in extremely high prices and not meeting the market application requirements. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The accompanying drawings are incorporated herein and form a part of this specification, showing embodiments consistent with the present invention and, together with the specification, are used to explain the principles of the present invention.

[0019] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or in the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, for those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0020] Figure 1 is a schematic structural diagram of an optoelectronic device provided by an embodiment of the present invention;

[0021] Figure 2 is a schematic circuit diagram of a circuit frequency doubling module provided by an embodiment of the present invention;

[0022] Figure 3 is a schematic circuit diagram of a circuit frequency doubling module provided by an embodiment of the present invention;

[0023] Figure 4 is a top view of a chip provided by an embodiment of the present invention;

[0024] Figure 5 is a cross-sectional view of a chip along the A-B direction provided by an embodiment of the present invention;

[0025] Figure 6 is a flowchart of a chip manufacturing method provided by an embodiment of the present invention;

[0026] Figure 7 It is a top view of an optoelectronic device provided by an embodiment of the present invention. Specific embodiments

[0027] To make the objectives, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. Apparently, the described embodiments are some, but not all, of the embodiments of the present application. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present application without creative efforts shall fall within the protection scope of the present application.

[0028] Figure 1 It is a schematic structural diagram of an optoelectronic device provided by an embodiment of the present invention; as Figure 1 shown, the optoelectronic device in the embodiment of the present invention specifically includes:

[0029] A photodiode chip 110 and a circuit frequency doubling module 120, wherein the photodiode chip 110 is electrically connected to the circuit frequency doubling module 120;

[0030] The circuit frequency doubling module 120 includes:

[0031] A frequency doubling circuit 121, which is connected to the output end of the photodiode chip 110 and is used to increase the frequency of the output signal of the photodiode chip 110;

[0032] A frequency selection circuit 122, which is connected to the output end of the frequency doubling circuit 121 and is used to screen signals with different frequencies output by the frequency doubling circuit 121.

[0033] It should be noted that the function of the frequency doubling circuit is to multiply the frequency of the signal. According to the different multiplication factors of the circuit, the frequency doubling circuit can be divided into a second harmonic frequency doubling circuit, a third harmonic frequency doubling circuit, a fourth harmonic frequency doubling circuit, etc. When a sinusoidal AC signal of a certain frequency passes through a non-linear component (such as a diode, a triode), various new frequency signals will be generated and output, mainly including DC components, fundamental wave components, second harmonics, third harmonics, etc. When an AC signal with a frequency of f is input into the non-linear component, signals with various new frequency components will be output, including DC components, a fundamental wave signal with a frequency of f, a second harmonic signal with a frequency of 2f, a third harmonic signal with a frequency of 3f, etc. Among these frequency signals, the amplitude of the fundamental wave signal is the largest, followed by the second harmonic. As the harmonic frequency increases, the amplitude gradually decreases; if a frequency selection circuit is added behind the non-linear component, for example, if the frequency of the frequency selection circuit is 2f, then the frequency selection circuit can select only the second harmonic signal with a frequency of 2f from the various signals output by the non-linear component, thereby obtaining a circuit with a frequency twice that of the input signal.

[0034] Specifically, the photodiode chip 110 in this embodiment can be a photoelectric chip that outputs any frequency, and the photodetector can also be a photoelectric chip of any frequency. In the present invention, the output frequency of the photodiode chip 110 is overclocked to reach the efficiency of a high-frequency photoelectric chip through the circuit frequency doubling module 120. For example, an avalanche diode with a frequency of 3G is overclocked to 6G, 9G, 10G, etc., an avalanche diode with a frequency of 5G can also be overclocked to 10G, and an avalanche diode with a frequency of 10G can also be overclocked to 20G. However, considering the manufacturing cost and efficiency of the chip, overclocking from a 3G photoelectric chip to 10G is the optimal embodiment.

[0035] The present invention provides an optoelectronic device, which includes: a photodiode chip and a circuit frequency doubling module, and the photodiode chip is electrically connected to the circuit frequency doubling module; the circuit frequency doubling module includes: a frequency doubling circuit, which is connected to the output end of the photodiode chip and is used to increase the frequency of the output signal of the photodiode chip; a frequency selection circuit, which is connected to the output end of the frequency doubling circuit and is used to screen different frequency signals output by the frequency doubling circuit. The optoelectronic device provided by the present invention increases the frequency of the output signal of the low-frequency photodiode chip through the frequency doubling circuit, and then screens the output signal of the frequency doubling circuit to obtain a high-frequency signal corresponding to a certain multiple, so as to achieve the high-frequency signal output by other high-frequency photoelectric chips, meeting the application requirements of the photodetector in the corresponding high-frequency field. Moreover, the optoelectronic device of the present invention combines a low-frequency photodiode chip and a frequency doubling circuit, with low production and packaging costs, simple process, good reliability, low price, and wide application range; therefore, the present invention solves the problem that the production cost of high-frequency optoelectronic devices in the prior art is high, resulting in very expensive prices and not meeting the market application requirements.

[0036] Figure 2 is a schematic circuit diagram of a circuit frequency doubling module provided by an embodiment of the present invention; as Figure 2 shown, the frequency selection circuit 122 in the circuit frequency doubling module 120 in the embodiment of the present invention includes:

[0037] a frequency selection capacitor C1, and the frequency selection capacitor C1 is connected to the output end of the frequency doubling circuit 121;

[0038] a frequency selection coupling transformer TR1, a first end of the primary side of the frequency selection coupling transformer TR1 is connected to a first end of the frequency selection capacitor C1, a second end of the primary side of the frequency selection coupling transformer TR1 is connected to a second end of the frequency selection capacitor C1, and the secondary side of the frequency selection coupling transformer TR1 is the output end.

[0039] The frequency doubling circuit 121 includes:

[0040] a diode VD, an anode of the diode VD is connected to the output end of the photodiode chip 110, and a cathode of the diode VD is connected to a first end of the frequency selection capacitor C1.

[0041] Specifically, the non-linear component used in the frequency doubling circuit of this embodiment is a diode. This frequency doubling circuit uses the diode VD for frequency conversion. When the frequency selection capacitor C1 and the frequency selection coupling transformer TR1 form a parallel resonance circuit with a resonance frequency of 3f, when a signal with a frequency of f passes through the diode vd, the diode will generate various new frequency signals, such as f, 2f, 3f, 4f, etc. These signals are output to the frequency selection circuit. Since the frequency of the frequency selection circuit is 3f, it resonates with the 3f signal. For the 3f signal, the frequency selection circuit is equivalent to a resistor with a very large resistance. Therefore, a very high 3f signal voltage is obtained at both ends of the frequency selection circuit. For signals of other frequencies, the impedance of the frequency selection circuit is very small, and they are bypassed to the ground through the frequency selection circuit. The 3f signal voltage on the transformer is induced to the secondary coil and then output to the subsequent circuit. Therefore, the frequency of the output signal f out is in 3 times the frequency of the input signal f.

[0042] Figure 3 is a schematic circuit diagram of a circuit frequency doubling module provided by an embodiment of the present invention; as Figure 3 shown, the frequency doubling circuit 121 in the circuit frequency doubling module 120 in the embodiment of the present invention further includes:

[0043] a triode Q, a base of the triode Q is connected to the output end of the photodiode chip 110, an emitter of the triode Q is grounded, and a collector of the triode Q is connected to a second end of the frequency selection capacitor C3.

[0044] Frequency doubling capacitor C2, the first end of the frequency doubling capacitor C2 is connected to the output end of the photodiode chip 110, and the second end of the frequency doubling capacitor C2 is connected to the base of the triode Q.

[0045] First resistor R1, the first end of the first resistor R1 is connected to the second end of the frequency doubling capacitor C2, the second end of the first resistor R1 is connected to the first end of the frequency selection capacitor C3, and the second end of the first resistor R1 is connected to the power supply VCC;

[0046] Second resistor R2, the first end of the second resistor R2 is connected to the second end of the frequency doubling capacitor C2, and the second end of the second resistor R2 is grounded;

[0047] Third resistor R3, the first end of the third resistor R3 is connected to the emitter of the triode Q, and the second end of the third resistor R3 is grounded.

[0048] Specifically, the non-linear component used in the frequency doubling circuit of this embodiment is a triode. This frequency doubling circuit uses the triode for frequency conversion. When the frequency selection capacitor C3 and the frequency selection coupling transformer TR2 in the figure form a parallel resonance circuit with a resonance frequency of 2f, the signal with a frequency of f is applied to the base of the triode Q through the frequency doubling capacitor C2. When this signal passes through the emitter of the triode Q, various frequency signals will be generated. These signals are then amplified by the triode Q and output from the collector. Because the frequency of the frequency selection circuit composed of the frequency selection capacitor C3 and the frequency selection coupling transformer TR2 is 2f, the 2f signal is selected from the various signals output by the triode Q. There is a very high 2f signal voltage on the primary coil of the frequency selection coupling transformer TR2, and this voltage is induced to the secondary coil and then sent to the subsequent circuit. Therefore, the frequency of the output signal f out is twice the frequency of the input signal f in of.

[0049] In an embodiment of the present invention, the photodiode chip includes: a polyimide film, and the thickness of the polyimide film is greater than 2um and less than 10um.

[0050] Figure 4 is a top view of a chip provided by an embodiment of the present invention. In this embodiment, the photodiode chip 110 takes an avalanche photodiode with a rate greater than 2.5G as an example, such as Figure 4As shown, a polyimide film 14 is disposed under the P electrode 13, and the polyimide film 14 is formed between the antireflection film and the P electrode to raise the position of the P electrode 13, thereby reducing the capacitance of the chip, and thus the rate can be increased to 2.5G to 5G. The polyimide film 14 can also effectively prevent electron migration and corrosion, playing a protective role; the diameter of the photosensitive area 15 of the avalanche photodiode in this embodiment is greater than 40um. Compared with the photosensitive areas of 35um and 40um of 10G APDs in the prior art, the area of the photosensitive area is larger, and the coupling is easier, which can greatly improve the coupling efficiency of the device, thereby achieving the purpose of reducing costs.

[0051] Figure 5 Figure 4 is a cross-sectional view of a chip along the A-B direction provided by an embodiment of the present invention. This embodiment is Figure 4 a cross-sectional view of the photodiode chip in Figure 5 along the A-B direction. The photodiode chip 110 in this embodiment includes: a substrate 2, a buffer layer 3 formed on the substrate, an absorption layer 4 formed on the buffer layer 3, a transition layer 5 formed on the absorption layer 4, a field control layer 6 formed on the transition layer 5, a top layer 7 formed on the field control layer 6, a contact layer 8 formed on the top layer 7, an N electrode 1 formed at the bottom of the substrate 2, a Zn diffusion region 10 formed in the contact layer 8, the top layer 7 and the field control layer, a passivation film 9 formed on the contact layer 8, an antireflection film 11 formed on the Zn diffusion region 10, and a first P electrode 12 and a second P electrode 13 formed on the Zn diffusion region 10, the passivation film 9 and the antireflection film 11. The Zn diffusion region 10 is formed by secondary diffusion through a Zn diffusion process. The Zn diffusion region 10 includes a multiplication region in the middle and a Zn diffusion ring on the periphery. The diffusion depth of the Zn diffusion ring is greater than the diffusion depth of the multiplication region. A polyimide film is formed between the antireflection film and the P electrode.

[0052] Furthermore, the substrate is an n-type semi-insulating InP substrate; the buffer layer is an InP buffer layer with a doping concentration greater than 2.5X10 17 cm -3 and the thickness of the buffer layer is greater than 0.8 and less than 1.5um; the absorption layer is an InGaAs absorption layer with a doping concentration lower than 5X10 14 cm -3 and the thickness of the absorption layer is greater than 1.5um and less than 2.5um; the transition layer is an InGaAsP transition layer, and the cut-off wavelengths of the transition layer are 1.45um, 1.25um and 1.05um respectively. The thickness of the transition layer is greater than 0.05um and less than 0.15um; the field control layer is a layer with a doping concentration greater than 1.6X10 17 cm -3The InP field control layer, the thickness of the field control layer is greater than 0.15 um and less than 0.25 um; the top layer is an InP top layer with a doping concentration less than 1X10 15 cm -3 , the thickness of the top layer is greater than 3.5 um and less than 4.5 um; the contact layer is an InGaAsP contact layer, the thickness of the contact layer is greater than 0.2 um and less than 0.35 um, and the cut-off wavelength of the contact layer is 1.05 um.

[0053] In one embodiment of the present invention, the thickness of the polyimide film is greater than 2 um and less than 10 um.

[0054] Specifically, according to the settings of the doping concentrations and thicknesses of the buffer layer 3, absorption layer 4, transition layer 5, field control layer 6, top layer 7 and contact layer 8 provided above, the transmission rate of the avalanche photodiode in this embodiment can reach 3 G bit / s; and the breakdown voltage of the avalanche photodiode in this embodiment is between 30 V and 40 V. Compared with the avalanche photodiode with a breakdown voltage between 40 V and 50 V in the prior art, the withstand voltage requirements of the subsequent circuit or device are reduced, and the coupling and packaging costs of the subsequent stage are also reduced.

[0055] It should be noted that the avalanche photodiode with a transmission rate greater than 2.5 G bit / s provided in this embodiment can be combined with the frequency doubling circuit in the above embodiment to meet the requirements of 10P PON through overclocking applications. Compared with the 10G APD in the prior art, the chip manufacturing process is simpler, the cost is lower, and the reliability is better.

[0056] Figure 6 is a flowchart of a chip manufacturing method provided by an embodiment of the present invention, as Figure 6 shown, the chip manufacturing method specifically includes the following steps:

[0057] Step S601, providing a substrate, and sequentially depositing and forming a buffer layer, an absorption layer, a transition layer, a field control layer, a top layer and a contact layer on the substrate by metal organic chemical vapor deposition;

[0058] Step S602, forming a passivation film on the contact layer by plasma enhanced chemical vapor deposition, and making a first annular window on the passivation film to form a first diffusion region, and completing the first diffusion by using a Zn diffusion process in the first diffusion region;

[0059] Step S603: Remove the passivation film within the first annular window to form a second diffusion region. In this second diffusion region, perform a Zn diffusion process to complete the second diffusion and form a Zn diffusion region. The Zn diffusion region includes a multiplication region in the middle and a Zn diffusion ring at the periphery. The diffusion depth of the Zn diffusion ring is greater than that of the multiplication region.

[0060] Step S604: Fabricate a polyimide film on the passivation film.

[0061] Step S605: Deposit an antireflection film on the diffusion region, passivation film, and polyimide film.

[0062] Step S606: Fabricate an annular window on the antireflection film to form a contact region between the chip P electrode and the chip Zn diffusion region.

[0063] Step S607: Form a P electrode on the contact region and an N electrode at the bottom of the substrate.

[0064] Figure 7 is a top view of an optoelectronic device provided by an embodiment of the present invention. As Figure 7 shown, the optoelectronic device 600 provided in this embodiment is a high-frequency optoelectronic device obtained by TO packaging a low-frequency optoelectronic diode chip 630 and a transimpedance amplifier 620. Among them, the low-frequency optoelectronic diode chip 630 is electrically connected to the transimpedance amplifier 620, and the transimpedance amplifier 620 is electrically connected to the pin 610 of the TO header. The first capacitor 640 is formed around the low-frequency optoelectronic diode chip 630, and the second capacitor 650 is connected to the pin 610 and the transimpedance amplifier 620 respectively. For example, after the optoelectronic diode chip 630 with a transmission rate of 3 G bit / s is amplified by the transimpedance amplifier 620, the transmission rate of the optoelectronic device 600 can reach 10 G bit / s, so that it can be overclocked and applied in 10G transmission optical communication.

[0065] The present invention provides an optoelectronic device, a chip and a chip manufacturing method. The device includes: a photodiode chip and a circuit frequency doubling module, and the photodiode chip is electrically connected to the circuit frequency doubling module; the circuit frequency doubling module includes: a frequency doubling circuit connected to the output end of the photodiode chip for increasing the frequency of the output signal of the photodiode chip; and a frequency selection circuit connected to the output end of the frequency doubling circuit for screening signals of different frequencies output by the frequency doubling circuit. The optoelectronic device provided by the present invention increases the frequency of the output signal of the low-frequency photodiode chip through the frequency doubling circuit, and then screens the output signal of the frequency doubling circuit to obtain a high-frequency signal corresponding to a corresponding multiple, so as to reach the high-frequency signal output by other high-frequency optoelectronic chips, meeting the application requirements of the optoelectronic device in the corresponding high-frequency field. Moreover, the optoelectronic device of the present invention combines a low-frequency photodiode chip and a frequency doubling circuit, with low production and packaging costs, simple process, good reliability, low price and wide application range; therefore, the present invention solves the problem in the prior art that the production cost of high-frequency optoelectronic devices is high, resulting in extremely high prices and not meeting the market application requirements.

[0066] It should be noted that in this article, relational terms such as "first" and "second" are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the term "comprises", "comprising" or any other variation thereof is intended to cover a non-exclusive inclusion, such that a process, method, article or device comprising a series of elements includes not only those elements, but also other elements not expressly listed, or elements inherent to such process, method, article or device. Without further limitation, an element defined by the phrase "comprising an..." does not exclude the presence of additional identical elements in the process, method, article or device comprising said element.

[0067] The above are only specific embodiments of the present invention, enabling those skilled in the art to understand or implement the present invention. Various modifications to these embodiments will be obvious to those skilled in the art, and the general principles defined herein can be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to these embodiments shown herein, but will be accorded the widest scope consistent with the principles and novel features claimed herein.

Claims

1. An optoelectronic device, characterized in that, The device includes: A photodiode chip and a circuit frequency doubling module, where the photodiode chip is electrically connected to the circuit frequency doubling module; The circuit frequency doubling module includes: A frequency doubling circuit, which is connected to the output end of the photodiode chip and is used to increase the frequency of the output signal of the photodiode chip; A frequency selection circuit, which is connected to the output end of the frequency doubling circuit and is used to screen signals of different frequencies output by the frequency doubling circuit. The frequency selection circuit includes: A frequency selection capacitor, which is connected to the output end of the frequency doubling circuit; A frequency selection coupling transformer, where the first end of the primary side of the frequency selection coupling transformer is connected to the first end of the frequency selection capacitor, the second end of the primary side of the frequency selection coupling transformer is connected to the second end of the frequency selection capacitor, and the secondary side of the frequency selection coupling transformer is the output end. The frequency doubling circuit includes: A diode, where the anode of the diode is connected to the output end of the photodiode chip, and the cathode of the diode is connected to the first end of the frequency selection capacitor.

2. The device according to claim 1, wherein The photodiode chip includes: a polyimide film, and the thickness of the polyimide film is greater than 2 um and less than 10 um.

3. A chip, characterized in that, The chip includes: a substrate, a buffer layer formed on the substrate, an absorption layer formed on the buffer layer, a transition layer formed on the absorption layer, a field control layer formed on the transition layer, a top layer formed on the field control layer, a contact layer formed on the top layer, an N electrode formed at the bottom of the substrate, a Zn diffusion region formed in the contact layer, the top layer and the field control layer, a passivation film formed on the contact layer, an antireflection film formed on the Zn diffusion region, and a P electrode formed on the Zn diffusion region, the passivation film and the antireflection film. The Zn diffusion region is formed by secondary diffusion through a Zn diffusion process. The Zn diffusion region includes a multiplication region in the middle and a Zn diffusion ring on the periphery. The diffusion depth of the Zn diffusion ring is greater than the diffusion depth of the multiplication region. A polyimide film is formed between the antireflection film and the P electrode.

4. The chip according to claim 3, wherein The substrate is an n-type semi-insulating InP substrate; the buffer layer is an InP buffer layer with a doping concentration greater than 2.5X10 17 cm -3 , and the thickness of the buffer layer is greater than 0.8 and less than 1.5 um; the absorption layer is an InGaAs absorption layer with a doping concentration lower than 5X10 14 cm -3 , and the thickness of the absorption layer is greater than 1.5 um and less than 2.5 um; the transition layer is an InGaAsP transition layer, and the cut-off wavelengths of the transition layer are 1.45 um, 1.25 um, and 1.05 um respectively, and the thickness of the transition layer is greater than 0.05 um and less than 0.15 um; the field control layer is an InP field control layer with a doping concentration greater than 1.6X10 17 cm -3 , and the thickness of the field control layer is greater than 0.15 um and less than 0.25 um; the top layer is an InP top layer with a doping concentration less than 1X10 15 cm -3 , and the thickness of the top layer is greater than 3.5 um and less than 4.5 um; the contact layer is an InGaAsP contact layer, and the thickness of the contact layer is greater than 0.2 um and less than 0.35 um, and the cut-off wavelength of the contact layer is 1.05 um.

5. The chip according to claim 4, characterized in that, The thickness of the polyimide film is greater than 2 um and less than 10 um.

6. A method for manufacturing a chip, characterized in that, The method includes: Providing a substrate, and sequentially depositing and forming a buffer layer, an absorption layer, a transition layer, a field control layer, a top layer and a contact layer on the substrate by metalorganic chemical vapor deposition; Forming a passivation film on the contact layer by plasma enhanced chemical vapor deposition, and making a first annular window on the passivation film to form a first diffusion region. In the first diffusion region, a Zn diffusion process is used to complete the first diffusion; Removing the passivation film in the first annular window to form a second diffusion region. In the second diffusion region, a Zn diffusion process is used to complete the second diffusion to form a Zn diffusion region. The Zn diffusion region includes a multiplication region in the middle and a Zn diffusion ring on the periphery. The diffusion depth of the Zn diffusion ring is greater than the diffusion depth of the multiplication region; Making a polyimide film on the passivation film; Depositing and forming an antireflection film on the diffusion region, the passivation film and the polyimide film; An annular window is fabricated on the antireflection film to form a contact area between the P electrode of the chip and the Zn diffusion region of the chip; A P electrode is formed on the contact area, and an N electrode is formed at the bottom of the substrate.

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