A self-repairing structure and method for metal interconnection lines in chip packaging

Abstract

The present invention discloses a self-repairing structure and method for metal interconnection lines in chip packaging, which belongs to the technical field of integrated circuit packaging. The structure includes a packaging substrate, on the surface of which metal interconnection lines are made; the repair alloy structure is arranged at the weak position where the metal interconnection lines are prone to failure, and the metal interconnection line breakpoints are automatically detected by using an embedded control chip in the package, and the alloy structure is repaired by hot melting to fill the gaps at the damaged part of the packaging structure and reconnect the broken metal interconnection lines. The structure has the ability to adaptively monitor and repair defects, accurate positioning, and fast action, which can effectively improve the reliability of the packaging structure, improve the applicability of the packaging in harsh environments, and reduce the cost of use.

Description

Technical Field

[0001] The present invention relates to the technical field of integrated circuit packaging, and in particular to a metal interconnection line self-repairing structure and method in chip packaging. Background Art

[0002] Wafer-level packaging uses semiconductor processes to manufacture metal interconnects, providing electrical connection channels between chips and functional units in the packaging structure. The width and thickness of typical metal interconnects range from a few microns to tens of microns. When the packaging structure is subjected to mechanical shocks from the external environment (such as falling, overload, vibration, etc.) and temperature changes, the substrate structure or the interconnect itself may be structurally damaged, which will cause the metal interconnect to break and then cause circuit failure. In this case, since the wafer-level packaging structure is a solid entity and cannot be disassembled for repair, the entire packaging structure will fail and be scrapped.

[0003] The existing method to avoid packaging structure failure due to gold interconnect breakage is to add redundant backup in the package, or to add impact-resistant and high-temperature-resistant structures and materials in the package structure, which will increase the volume and weight of the package structure, make the structure complex, increase the packaging cost, reduce the applicability of wafer-level packaging, and cause adverse effects. Summary of the invention

[0004] The purpose of the present invention is to provide a metal interconnection self-repairing structure and method in a chip package to solve the problem that the current method of avoiding packaging structure failure due to gold interconnection breakage will increase the volume and weight of the packaging structure and make the structure complicated.

[0005] In order to solve the above technical problems, the present invention provides a metal interconnection self-repairing structure in a chip package, comprising:

[0006] A packaging substrate, the surface of which is provided with metal interconnection lines;

[0007] repairing alloy structures, fabricated on the metal interconnects;

[0008] A plurality of control chips are arranged on the surface of the repair alloy structure.

[0009] Optionally, the repair alloy structure is manufactured at a relatively weak position on the metal interconnect line, and the width of the repair alloy structure is greater than 10 microns.

[0010] Optionally, the repair alloy structure is manufactured by an electroplating process and has hot-melt properties.

[0011] Optionally, the control chip has an inter-chip resistance testing function, is capable of heating and temperature control, and the distance between adjacent control chips exceeds 10 microns.

[0012] The present invention also provides a self-repair method for metal interconnects in chip packaging, comprising:

[0013] Step 1: The metal interconnection self-repairing structure in the chip package is manufactured inside the package structure, and the control chip is powered on to start the metal interconnection fracture detection;

[0014] Step 2: The package structure breaks, causing the metal interconnection line to break. The control chip detects the break through resistance detection to determine the break location.

[0015] Step 3: The control chip is heated, the repair alloy structure is heated up and melted, and a solid-liquid mixed repair alloy is formed to fill the fracture gap; after the control chip determines through resistance detection that the fracture gap is filled, the control chip stops heating, the repair alloy is cooled and solidified, and the broken metal wire is reconnected.

[0016] Optionally, the control chip is powered on to start the metal interconnection line fracture detection including:

[0017] The control chip detects the inter-chip resistance and determines the resistance constant of the repair alloy structure and the metal interconnection line below the control chip.

[0018] Optionally, the control chip detects the occurrence of a fracture and determines the fracture position through resistance detection, including:

[0019] When a metal interconnect line breaks, the resistance between a pair of control chips across the break gap increases to an open circuit, thereby detecting the occurrence of the break and determining the break location through chip ID recognition.

[0020] The present invention provides a self-repairing structure and method for metal interconnection lines in a chip package. The structure comprises a package substrate, on the surface of which metal interconnection lines are made; a repair alloy structure is arranged at a weak position where the metal interconnection lines are prone to failure, and an embedded control chip in the package is used to automatically detect the breakpoints of the metal interconnection lines. The alloy structure is repaired by hot melting to fill the gaps at the damaged parts of the package structure and reconnect the broken metal interconnection lines. The structure has the capability of adaptively monitoring and repairing defects, accurate positioning, and rapid action, and can effectively improve the reliability of the package structure, improve the applicability of the package in harsh environments, and reduce the cost of use. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 It is a schematic diagram of the self-repairing structure of metal interconnection lines in chip packaging provided by the present invention;

[0022] Figure 2 It is a schematic diagram of the fracture of the packaging structure leading to the fracture of the metal interconnection line;

[0023] Figure 3 It is a schematic diagram of the repair of alloy structure by melting and filling the fracture gap. DETAILED DESCRIPTION

[0024] The following is a further detailed description of a metal interconnection self-repair structure and method in a chip package proposed by the present invention in combination with the accompanying drawings and specific embodiments. The advantages and features of the present invention will become clearer according to the following description and claims. It should be noted that the drawings are all in a very simplified form and are not in precise proportions, and are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present invention.

[0025] Embodiment 1

[0026] The present invention provides a metal interconnection self-repairing structure in a chip package, which Figure 1 As shown, it includes a package substrate 11, a repair alloy structure 12, a metal interconnection line 13 and a plurality of control chips 14. The metal interconnection line 13 is made on the surface of the package substrate 11; the repair alloy structure 12 is manufactured by an electroplating process and is manufactured at a relatively weak position on the metal interconnection line 13, and the width of the repair alloy structure 12 is greater than the typical failure gap width. At present, the typical failure gap width is about 0.1 to 10 microns, so the width of the repair alloy structure 12 is greater than 10 microns; the repair alloy structure 12 has a hot melt property. When the temperature exceeds the phase transition temperature, the repair alloy structure 12 forms a repair alloy in a solid-liquid mixed state, which has fluidity. When the temperature is lower than the phase transition temperature, the repair alloy is in a solid state; the phase transition temperature of the repair alloy can be controlled by changing the alloy composition; a plurality of control chips 14 are arranged on the surface of the repair alloy structure 12, have a chip-to-chip resistance test function, can perform heating and temperature control, and the distance between adjacent control chips 14 exceeds the typical failure gap width, that is, exceeds 10 microns.

[0027] Embodiment 2

[0028] The present invention provides a self-repair method for metal interconnection lines in chip packaging, comprising the following steps:

[0029] like Figure 1 As shown, the metal interconnection self-repairing structure in the chip package is manufactured inside the package structure, and the control chip 14 is powered on to start the metal interconnection line 13 fracture detection; wherein,

[0030] The control chip 14 detects the inter-chip resistance and determines the resistance constant of the repair alloy structure 12 and the metal interconnection line 13 below the control chip 14;

[0031] like Figure 2 As shown, the package structure is broken, resulting in the metal interconnection line 13 being broken, and the control chip 14 detects the occurrence of the break and determines the break position through resistance detection; wherein,

[0032] When the metal interconnection line 13 is broken, the resistance between the pair of control chips 14 across the broken gap increases to an open circuit, thereby detecting the occurrence of the break, and determining the break position through chip ID recognition;

[0033] like Figure 3 As shown, the control chip 14 heats up, the repair alloy structure 12 heats up and melts, and a solid-liquid mixed repair alloy is formed to fill the fracture gap; after the control chip 14 determines that the fracture gap is filled through resistance detection, the control chip 14 stops heating, the repair alloy cools down and solidifies, and the broken metal wire is reconnected; wherein,

[0034] After the molten repair alloy fills the broken gap, the broken metal interconnects are reconnected by the liquid repair alloy. After the control chip detects that the resistance has dropped back to normal, it stops heating and allows the repair alloy to cool down and solidify.

[0035] The above description is only a description of the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention. Any changes or modifications made by a person skilled in the art in the field of the present invention based on the above disclosure shall fall within the scope of protection of the claims.

Claims

1. A metal interconnection self-repairing structure in a chip package, characterized in that: include: A packaging substrate (11), the surface of which is provided with metal interconnection lines (13); A repair alloy structure (12) is fabricated on the metal interconnect line (13); A plurality of control chips (14) are arranged on the surface of the repair alloy structure (12); The repair alloy structure (12) is manufactured at a relatively weak position on the metal interconnection line (13), and the width of the repair alloy structure (12) is greater than 10 micrometers; The repair alloy structure (12) is manufactured by an electroplating process and has hot-melt properties; The control chip (14) has an inter-chip resistance testing function and is capable of performing heating and temperature control. The distance between adjacent control chips (14) exceeds 10 micrometers.

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