Power semiconductor device turn-on and turn-off voltage generation circuit

Abstract

The present invention discloses a circuit for generating turn-on and turn-off voltages of a power semiconductor device, which includes a single power supply, a first reference voltage module, a second reference voltage module, a switch control module, and an output module. The first reference voltage module generates a first voltage based on the single power supply, and the first voltage is equal to the voltage of the single power supply minus the turn-on voltage. The second reference voltage module generates a second voltage based on the single power supply, and the second voltage is equal to the turn-off voltage. The switch control module determines whether the first voltage is greater than a preset voltage. When the first voltage is greater than the preset voltage, the output module amplifies and outputs the first voltage so that the single power supply distributes a stable turn-on voltage. When the first voltage is less than or equal to the preset voltage, the output module amplifies and outputs the second voltage so that the single power supply distributes a stable turn-off voltage. In this way, the design can be simplified and the cost can be saved.

Description

Technical Field

[0001] The present invention relates to the field of integrated circuits, and particularly to a circuit for generating turn-on and turn-off voltages of a power semiconductor device. Background Art

[0002] In an integrated circuit chip, in the driving application of a power semiconductor device (such as an IGBT), different turn-on voltages and turn-off voltages are required to enable the reliable turn-on and turn-off of the power semiconductor device.

[0003] In the prior art, two power supplies are usually required to supply power to the turn-on module and the turn-off module respectively. However, due to circuit influence, the supply voltage of the power supply usually fluctuates within a certain range, resulting in a relatively complex design, high cost, and difficulty in implementation for the dual-power-supply design. Summary of the Invention

[0004] In view of this, it is necessary to provide a circuit for generating turn-on and turn-off voltages of a power semiconductor device, which can generate the turn-on voltage and turn-off voltage required by the power semiconductor device through a single power supply, thereby simplifying the design and saving costs.

[0005] The technical solution proposed by the present invention to achieve the above object is as follows:

[0006] A circuit for generating turn-on and turn-off voltages of a power semiconductor device includes a single power supply with a fluctuating supply voltage within a certain range, which is used to generate a turn-on voltage and a turn-off voltage for the power semiconductor device through the single power supply. The circuit for generating turn-on and turn-off voltages of the power semiconductor device further includes a first reference voltage module, a second reference voltage module, a switch control module, and an output module. One end of the first reference voltage module and one end of the second reference voltage module are both electrically connected to the single power supply. The other end of the first reference voltage module and the other end of the second reference voltage module are both electrically connected to the switch control module. The switch control module is also electrically connected to the output module. The first reference voltage module is used to generate a first voltage according to the single power supply, and the voltage value of the first voltage is the voltage value of the single power supply minus the voltage value of the turn-on voltage required by the power semiconductor device. The second reference voltage module is used to generate a second voltage according to the single power supply, and the voltage value of the second voltage is the voltage value of the turn-off voltage required by the power semiconductor device. The switch control module is used to determine whether the first voltage is greater than a preset voltage;

[0007] When the first voltage is greater than the preset voltage, the switch control module cuts off the electrical connection with the second reference voltage module and controls the first voltage to be transmitted to the output module. The output module is used to perform power amplification on the first voltage and output it, so that the single power supply distributes a stable turn-on voltage and a turn-off voltage that changes with the supply voltage of the single power supply.

[0008] When the first voltage is less than or equal to the preset voltage, the switch control module conducts the electrical connection with the second reference voltage module and controls the second voltage to be transmitted to the output module. The output module is used to perform power amplification on the second voltage and output it, so that the single power supply distributes a stable turn-off voltage and a turn-on voltage that changes with the supply voltage of the single power supply.

[0009] Further, the first reference voltage module includes a first operational amplifier, a first electronic switch, and a first current source. The output terminal of the first operational amplifier is electrically connected to the first end of the first electronic switch. The non-inverting input terminal of the first operational amplifier inputs a first reference voltage, and the first reference voltage is equal to the first voltage. The inverting input terminal of the first operational amplifier is electrically connected to the second end of the first electronic switch. The second end of the first electronic switch is also grounded through the first current source, and the third end of the first electronic switch is electrically connected to the single power supply.

[0010] Further, the second reference voltage module includes a second operational amplifier, a second electronic switch, and a second current source. The output terminal of the second operational amplifier is electrically connected to the first end of the second electronic switch. The non-inverting input terminal of the second operational amplifier inputs a second reference voltage, and the second reference voltage is equal to the second voltage. The inverting input terminal of the second operational amplifier is electrically connected to the second end of the second electronic switch. The second end of the second electronic switch is also grounded through the second current source, and the third end of the second electronic switch is electrically connected to the single power supply.

[0011] Further, the switch control module includes third to ninth electronic switches, third to fourth current sources, and resistors. The first terminal of the third electronic switch is grounded through the third current source. The second terminal of the third electronic switch is electrically connected to the second terminal of the first electronic switch and is also electrically connected to the output module. The third terminal of the third electronic switch is electrically connected to the second terminal of the second electronic switch. The first terminal of the fourth electronic switch is electrically connected to the first terminal of the third electronic switch. The second terminal of the fourth electronic switch is electrically connected to the second terminal of the third electronic switch. The third terminal of the fourth electronic switch is electrically connected to the first terminal of the third electronic switch. The first terminal of the fifth electronic switch is electrically connected to the first terminal of the sixth electronic switch. The second terminal of the fifth electronic switch is electrically connected to the second terminal of the third electronic switch. The third terminal of the fifth electronic switch is electrically connected to the first terminal of the third electronic switch. The second terminal of the sixth electronic switch is electrically connected to the second terminal of the third electronic switch. The third terminal of the sixth electronic switch is electrically connected to the first terminal of the sixth electronic switch and is also electrically connected to the third terminal of the eighth electronic switch through the fourth current source. The first terminal of the eighth electronic switch is electrically connected to the first terminal of the ninth electronic switch. The second terminal of the eighth electronic switch is grounded. The second terminal of the ninth electronic switch is grounded. The third terminal of the ninth electronic switch is electrically connected to the third terminal of the seventh electronic switch and is also electrically connected to the first terminal of the ninth electronic switch. The first terminal of the seventh electronic switch is electrically connected to a power supply. The second terminal of the seventh electronic switch is electrically connected to the second terminal of the third electronic switch through the resistor.

[0012] Further, the first electronic switch, the second electronic switch, the eighth electronic switch, and the ninth electronic switch are all N-channel field effect transistors. The first, second, and third terminals of the first electronic switch, the second electronic switch, the eighth electronic switch, and the ninth electronic switch respectively correspond to the gate, source, and drain of the N-channel field effect transistor. The third to seventh electronic switches are all P-channel field effect transistors. The first, second, and third terminals of the third to seventh electronic switches respectively correspond to the gate, source, and drain of the P-channel field effect transistor.

[0013] Further, the output module includes a third operational amplifier. The non-inverting input terminal of the third operational amplifier is electrically connected to the second terminal of the first electronic switch. The inverting input terminal of the third operational amplifier is electrically connected to the output terminal of the third operational amplifier.

[0014] Further, the power semiconductor device is IGBT or SiC.

[0015] The above-mentioned turn-on and turn-off voltage generation circuit of the power semiconductor device generates a first voltage and a second voltage respectively by setting a first reference voltage module and a second reference voltage module according to a single power supply. The switch control module compares the magnitudes of the first voltage and a preset voltage, so as to allocate a stable turn-on voltage and a turn-off voltage that varies with the supply voltage of the single power supply when the first voltage is greater than the preset voltage, and allocate the turn-off voltage required for the power semiconductor device and a turn-on voltage that varies with the supply voltage of the single power supply when the first voltage is less than or equal to the preset voltage. In this way, the turn-on voltage and the turn-off voltage required for the power semiconductor device can be generated by a single power supply, thereby simplifying the design and saving costs. Brief Description of the Drawings

[0016] Figure 1 is a block diagram of a preferred embodiment of the turn-on and turn-off voltage generation circuit of the power semiconductor device of the present invention.

[0017] Figure 2 is a circuit connection diagram of a preferred embodiment of the turn-on and turn-off voltage generation circuit of the power semiconductor device of the present invention.

[0018] Description of the Main Element Symbols

[0019] Turn-on and turn-off voltage generation circuit 100 of the power semiconductor device

[0020] Single power supply 10

[0021] First reference voltage module 20

[0022] Second reference voltage module 30

[0023] Switch control module 40

[0024] Output module 50

[0025] Operational amplifiers OP1, OP2, OP3

[0026] Current sources I1, I2, I3, I4

[0027] Electronic switches Q1, Q2, Q3, Q4, Q5, Q6, Q7, Q8, Q9

[0028] Resistor R

[0029] The following specific embodiments will further illustrate the present invention in conjunction with the above-mentioned drawings. Specific Embodiments

[0030] In order to make the objectives, technical solutions and advantages of the present invention more clear and understandable, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0031] Please refer to Figure 1 , the present invention provides a power semiconductor device turn-on and turn-off voltage generation circuit 100. The power semiconductor device turn-on and turn-off voltage generation circuit 100 is used to be electrically connected to the turn-on module (not shown in the figure) and the turn-off module (not shown in the figure) of the power semiconductor device, so as to generate corresponding turn-on voltage and turn-off voltage for the turn-on module and the turn-off module respectively. In this embodiment, the power semiconductor device turn-on and turn-off voltage generation circuit 100 is applied to an integrated circuit, and the power semiconductor device can be an IGBT. In other embodiments, the power semiconductor device can also be SiC.

[0032] The power semiconductor device turn-on and turn-off voltage generation circuit 100 includes a single power supply 10, a first reference voltage module 20, a second reference voltage module 30, a switch control module 40 and an output module 50. One end of the first reference voltage module 20 and one end of the second reference voltage module 30 are both electrically connected to the single power supply 10, and the other end of the first reference voltage module 20 and the other end of the second reference voltage module 30 are both electrically connected to the switch control module 40. The switch control module 40 is also electrically connected to the output module 50.

[0033] The single power supply 10 is used to provide a power supply for generating the turn-on voltage and turn-off voltage of the power semiconductor device, and its supply voltage will fluctuate within a certain range. The first reference voltage module 20 is used to generate a first voltage according to the single power supply 10. The voltage value of the first voltage is the voltage value of the single power supply 10 minus the voltage value of the turn-on voltage required by the power semiconductor device. The second reference voltage module 30 is used to generate a second voltage according to the single power supply 10. The voltage value of the second voltage is the voltage value of the turn-off voltage required by the power semiconductor device. The switch control module 40 is used to judge whether the first voltage is greater than a preset voltage.

[0034] When the switch control module 40 judges that the first voltage is greater than the preset voltage, the switch control module 40 cuts off the electrical connection with the second reference voltage module 30 and controls the first voltage to be transmitted to the output module 50. The output module 50 is used to perform power amplification and output on the first voltage, so that the single power supply 10 distributes a stable turn-on voltage and a turn-off voltage that changes with the supply voltage of the single power supply 10.

[0035] When the switch control module 40 determines that the first voltage is less than or equal to the preset voltage, the switch control module 40 conducts the electrical connection with the second reference voltage module 30 and controls the second voltage to be transmitted to the output module 50. The output module 50 is configured to perform power amplification and output of the second voltage, so that the single power supply 10 distributes a stable turn-off voltage and a turn-on voltage that varies with the supply voltage of the single power supply 10.

[0036] Specifically, when the single power supply 10 distributes a stable turn-on voltage, the other turn-off voltage distributed by the single power supply 10 will vary with the supply voltage of the single power supply 10, but does not affect the turn-off function of the turn-off voltage. Similarly, when the single power supply 10 distributes a stable turn-off voltage, the other turn-on voltage distributed by the single power supply 10 will vary with the supply voltage of the single power supply 10, but does not affect the turn-on function of the turn-on voltage. In this way, the turn-on voltage and turn-off voltage required for the power semiconductor device can be generated by a single power supply 10 with a power supply voltage fluctuating within a certain range, simplifying the design and saving costs.

[0037] Please also refer to Figure 2 , Figure 2 which is a circuit connection diagram of a preferred embodiment of the present invention. In this embodiment, the voltage value provided by the single power supply 10 is VDD_HV. The first reference voltage module 20 includes an operational amplifier OP1, an electronic switch Q1, and a current source I1. The output terminal of the operational amplifier OP1 is electrically connected to the first terminal of the electronic switch Q1. The non-inverting input terminal of the operational amplifier OP1 inputs a first reference voltage VREF1. The inverting input terminal of the operational amplifier OP1 is electrically connected to the second terminal of the electronic switch Q1. The second terminal of the electronic switch Q1 is also grounded through the current source I1. The third terminal of the electronic switch Q1 is electrically connected to the single power supply 10. The operational amplifier OP1, the electronic switch Q1, and the current source I1 form a voltage negative feedback closed-loop circuit, where the electronic switch Q1 provides a drive current, the current source I1 provides a bias current, and the operational amplifier OP1 realizes closed-loop negative feedback. In this embodiment, the turn-on voltage of the power semiconductor device is 15V, the first reference voltage VREF1 = VDD_HV - 15V, and the first voltage is equal to the first reference voltage VREF1.

[0038] The second reference voltage module 30 includes an operational amplifier OP2, an electronic switch Q2, and a current source I2. The output terminal of the operational amplifier OP2 is electrically connected to the first terminal of the electronic switch Q2. The non-inverting input terminal of the operational amplifier OP2 inputs a second reference voltage. The inverting input terminal of the operational amplifier OP2 is electrically connected to the second terminal of the electronic switch Q2. The second terminal of the electronic switch Q2 is also grounded through the current source I2. The third terminal of the electronic switch Q2 is electrically connected to the single power supply 10. The operational amplifier OP2, the electronic switch Q2, and the current source I2 form a voltage negative feedback closed-loop circuit, where the electronic switch Q2 provides a driving current, the current source I2 provides a bias current, and the operational amplifier OP2 realizes closed-loop negative feedback. In this embodiment, the turn-off voltage of the power semiconductor device is 5.5V, the second reference voltage VREF2 = 5.5V, and the second voltage is equal to the second reference voltage VREF2.

[0039] The switch control module 40 includes seven electronic switches Q3 - Q9, two current sources I3 - I4, and a resistor R. The first terminal of the electronic switch Q3 is grounded through the current source I3. The second terminal of the electronic switch Q3 is electrically connected to the second terminal of the electronic switch Q1. The second terminal of the electronic switch Q3 is also electrically connected to the output module 50. The third terminal of the electronic switch Q3 is electrically connected to the second terminal of the electronic switch Q2. The first terminal of the electronic switch Q4 is electrically connected to the first terminal of the electronic switch Q3. The second terminal of the electronic switch Q4 is electrically connected to the second terminal of the electronic switch Q3. The third terminal of the electronic switch Q4 is electrically connected to the first terminal of the electronic switch Q3.

[0040] The first terminal of the electronic switch Q5 is electrically connected to the first terminal of the electronic switch Q6. The second terminal of the electronic switch Q5 is electrically connected to the second terminal of the electronic switch Q3. The third terminal of the electronic switch Q5 is electrically connected to the first terminal of the electronic switch Q3. The second terminal of the electronic switch Q6 is electrically connected to the second terminal of the electronic switch Q3. The third terminal of the electronic switch Q6 is electrically connected to the first terminal of the electronic switch Q6. The third terminal of the electronic switch Q6 is also electrically connected to the third terminal of the electronic switch Q8 through the current source I4. The electronic switch Q5 and the electronic switch Q6 form a current mirror, that is, the electronic switch Q5 can mirror the current of the electronic switch Q6. In this embodiment, the current flowing through the current source I4 is equal to the current flowing through the current source I3.

[0041] The first terminal of the electronic switch Q8 is electrically connected to the first terminal of the electronic switch Q9, and the second terminal of the electronic switch Q8 is grounded. The second terminal of the electronic switch Q9 is grounded, the third terminal of the electronic switch Q9 is electrically connected to the third terminal of the electronic switch Q7, and the third terminal of the electronic switch Q9 is also electrically connected to the first terminal of the electronic switch Q9. The electronic switch Q8 and the electronic switch Q9 form a current mirror, that is, the electronic switch Q8 can mirror the current of the electronic switch Q9.

[0042] The first terminal of the electronic switch Q7 is electrically connected to the power supply VDD, and the second terminal of the electronic switch Q7 is electrically connected to the second terminal of the electronic switch Q3 through the resistor R. The electronic switch Q7 and the resistor R form a voltage detection unit to detect whether the first voltage output from the second terminal of the electronic switch Q1 exceeds a preset voltage. In this embodiment, the power supply VDD is the 5V power supply inside the integrated chip, and the preset voltage is the voltage that can turn on the electronic switch Q7, such as 5.5V.

[0043] The output module 50 includes an operational amplifier OP3. The non-inverting input terminal of the operational amplifier OP3 is electrically connected to the second terminal of the electronic switch Q1, the inverting input terminal of the operational amplifier OP3 is electrically connected to the output terminal of the operational amplifier OP3, and the output terminal of the operational amplifier OP3 is electrically connected to the turn-on module (not shown in the figure) and the turn-off module (not shown in the figure) of the power semiconductor device to generate corresponding turn-on voltage and turn-off voltage for the turn-on module and the turn-off module respectively.

[0044] During operation, when the voltage detection unit formed by the electronic switch Q7 and the resistor R detects that the first voltage exceeds the preset voltage, the electronic switch Q7 conducts, and a current flows through the electronic switch Q9. This current increases as the first voltage increases. At this time, the electronic switch Q8 mirrors the current flowing through the electronic switch Q9, and this mirrored current flows through the electronic switch Q6 after being limited by the current source I4. The electronic switch Q5 then mirrors the current flowing through the electronic switch Q6, and the generated mirrored current flows to ground after being limited by the current source I3. As the voltage provided by the single power supply 10 increases, the first voltage will increase, and the current flowing through the current source I3 can be entirely provided by the electronic switch Q5. At this time, no current will flow through the electronic switch Q4, and the electronic switch Q3 will have no bias voltage and thus be in the cut-off state. In this way, the second reference voltage module 30 can be isolated to ensure that the second reference voltage module 30 is not affected by high voltage. The operational amplifier OP3 buffers and power-amplifies the first voltage and then outputs the voltage VDDL, which is used to turn off the semiconductor power device, where VDDL = VREF1 = VDD_HV - 15V. In this way, the single power supply 10 will allocate another stable voltage VDDH, which is used to turn on the semiconductor power device, and the voltage of VDDH is 15V.

[0045] When the voltage detection unit formed by the electronic switch Q7 and the resistor R detects that the first voltage is less than or equal to the preset voltage, the electronic switch Q7 is cut off, and no current flows through the electronic switches Q5, Q6, Q8, and Q9. At this time, the current generated by the current source I3 all flows through the electronic switch Q4, generating a bias voltage on the electronic switch Q4, and this bias voltage will cause the electronic switch Q3 to conduct. At this time, the operational amplifier OP3 buffers and power-amplifies the higher second voltage and then outputs the stable voltage VDDL, which is used to turn off the semiconductor power device, where VDDL = VREF2 = 5.5V. The single power supply 10 will allocate another voltage VDDH, which is used to turn on the semiconductor power device, and the voltage of VDDH is VDD_HV - 5.5V.

[0046] In this embodiment, the electronic switches Q1, Q2, Q8, and Q9 are all N-channel field-effect transistors, and the first, second, and third terminals of the electronic switches Q1, Q2, Q8, and Q9 respectively correspond to the gate, source, and drain of the N-channel field-effect transistor. The electronic switches Q3 - Q7 are all P-channel field-effect transistors, and the first, second, and third terminals of the electronic switches Q3 - Q7 respectively correspond to the gate, source, and drain of the P-channel field-effect transistor.

[0047] The above-mentioned turn-on and turn-off voltage generation circuit 100 of the power semiconductor device sets the first reference voltage module 20 and the second reference voltage module 30, so that the first reference voltage module 20 and the second reference voltage module 30 generate a first voltage and a second voltage respectively according to the single power supply 10. Also, the switch control module 40 compares the magnitudes of the first voltage and a preset voltage, so as to allocate a stable turn-on voltage and a variable turn-off voltage from the single power supply 10 when the first voltage is greater than the preset voltage, and allocate a stable turn-off voltage and a variable turn-on voltage from the single power supply 10 when the first voltage is less than or equal to the preset voltage. In this way, the turn-on voltage and the turn-off voltage required for the power semiconductor device can be generated by the single power supply 10, thereby simplifying the design and saving costs.

[0048] The above are only the preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent replacements, and improvements made within the spirit and principles of the present invention shall be included within the protection scope of the present invention.

Claims

1. A turn-on and turn-off voltage generation circuit for a power semiconductor device, comprising a single power supply with a fluctuating supply voltage within a certain range, for generating a turn-on voltage and a turn-off voltage for the power semiconductor device through the single power supply, Characterized in that, the turn-on and turn-off voltage generation circuit for the power semiconductor device further comprises a first reference voltage module, a second reference voltage module, a switch control module and an output module. One end of the first reference voltage module and one end of the second reference voltage module are both electrically connected to the single power supply. The other end of the first reference voltage module and the other end of the second reference voltage module are both electrically connected to the switch control module. The switch control module is also electrically connected to the output module. The first reference voltage module is used to generate a first voltage according to the single power supply. The voltage value of the first voltage is the voltage value of the single power supply minus the voltage value of the turn-on voltage required by the power semiconductor device. The second reference voltage module is used to generate a second voltage according to the single power supply. The voltage value of the second voltage is the voltage value of the turn-off voltage required by the power semiconductor device. The switch control module is used to judge whether the first voltage is greater than a preset voltage; When the first voltage is greater than the preset voltage, the switch control module cuts off the electrical connection with the second reference voltage module and controls the first voltage to be transmitted to the output module. The output module is used to perform power amplification and output on the first voltage, so that the single power supply distributes a stable turn-on voltage and a turn-off voltage that changes with the supply voltage of the single power supply; When the first voltage is less than or equal to the preset voltage, the switch control module conducts the electrical connection with the second reference voltage module and controls the second voltage to be transmitted to the output module. The output module is used to perform power amplification and output on the second voltage, so that the single power supply distributes a stable turn-off voltage and a turn-on voltage that changes with the supply voltage of the single power supply.

2. The turn-on and turn-off voltage generation circuit for a power semiconductor device according to claim 1, Characterized in that, the first reference voltage module comprises a first operational amplifier, a first electronic switch and a first current source. The output end of the first operational amplifier is electrically connected to the first end of the first electronic switch. The non-inverting input end of the first operational amplifier inputs a first reference voltage, and the first reference voltage is equal to the first voltage. The inverting input end of the first operational amplifier is electrically connected to the second end of the first electronic switch. The second end of the first electronic switch is also grounded through the first current source. The third end of the first electronic switch is electrically connected to the single power supply.

3. The turn-on and turn-off voltage generation circuit for a power semiconductor device according to claim 2, Characterized in that, The second reference voltage module includes a second operational amplifier, a second electronic switch, and a second current source. The output terminal of the second operational amplifier is electrically connected to the first terminal of the second electronic switch. The non-inverting input terminal of the second operational amplifier inputs a second reference voltage, and the second reference voltage is equal to the second voltage. The inverting input terminal of the second operational amplifier is electrically connected to the second terminal of the second electronic switch. The second terminal of the second electronic switch is also grounded through the second current source. The third terminal of the second electronic switch is electrically connected to the single power supply.

4. The power semiconductor device turn-on and turn-off voltage generation circuit according to claim 3, characterized in that, the switch control module includes third to ninth electronic switches, third to fourth current sources, and a resistor. The first terminal of the third electronic switch is grounded through the third current source. The second terminal of the third electronic switch is electrically connected to the second terminal of the first electronic switch, and the second terminal of the third electronic switch is also electrically connected to the output module. The third terminal of the third electronic switch is electrically connected to the second terminal of the second electronic switch. The first terminal of the fourth electronic switch is electrically connected to the first terminal of the third electronic switch. The second terminal of the fourth electronic switch is electrically connected to the second terminal of the third electronic switch. The third terminal of the fourth electronic switch is electrically connected to the first terminal of the third electronic switch. The first terminal of the fifth electronic switch is electrically connected to the first terminal of the sixth electronic switch. The second terminal of the fifth electronic switch is electrically connected to the second terminal of the third electronic switch. The third terminal of the fifth electronic switch is electrically connected to the first terminal of the third electronic switch. The second terminal of the sixth electronic switch is electrically connected to the second terminal of the third electronic switch. The third terminal of the sixth electronic switch is electrically connected to the first terminal of the sixth electronic switch, and the third terminal of the sixth electronic switch is also electrically connected to the third terminal of the eighth electronic switch through the fourth current source. The first terminal of the eighth electronic switch is electrically connected to the first terminal of the ninth electronic switch. The second terminal of the eighth electronic switch is grounded. The second terminal of the ninth electronic switch is grounded. The third terminal of the ninth electronic switch is electrically connected to the third terminal of the seventh electronic switch, and the third terminal of the ninth electronic switch is also electrically connected to the first terminal of the ninth electronic switch. The first terminal of the seventh electronic switch is electrically connected to a power supply. The second terminal of the seventh electronic switch is electrically connected to the second terminal of the third electronic switch through the resistor.

5. The power semiconductor device turn-on and turn-off voltage generation circuit according to claim 4, characterized in that, The first electronic switch, the second electronic switch, the eighth electronic switch, and the ninth electronic switch are all N-channel field effect transistors. The first terminal, the second terminal, and the third terminal of the first electronic switch, the second electronic switch, the eighth electronic switch, and the ninth electronic switch respectively correspond to the gate, source, and drain of the N-channel field effect transistor. The third to seventh electronic switches are all P-channel field effect transistors. The first terminal, the second terminal, and the third terminal of the third to seventh electronic switches respectively correspond to the gate, source, and drain of the P-channel field effect transistor.

6. The power semiconductor device turn-on and turn-off voltage generation circuit according to claim 2, characterized in that the output module includes a third operational amplifier. The non-inverting input terminal of the third operational amplifier is electrically connected to the second terminal of the first electronic switch. The inverting input terminal of the third operational amplifier is electrically connected to the output terminal of the third operational amplifier.

7. The power semiconductor device turn-on and turn-off voltage generation circuit according to claim 1, characterized in that the power semiconductor device is an IGBT or SiC.

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