A vertical cavity surface emitting laser and a method for manufacturing the same

Abstract

The present application discloses a vertical cavity surface emitting laser, including a first electrode, a substrate, a first reflector layer, a quantum dot layer, a first confinement layer, a transition layer, a doping layer, a second confinement layer, a second reflector layer, a relief layer, and a second electrode stacked in sequence from bottom to top, wherein the transition layer and the doping layer are provided with proton implantation areas, the relief layer includes an etched area and an unetched area, and the intersection of the center line of the vertical cavity surface emitting laser and the relief layer is located in the etched area or in the unetched area. By introducing the offset of the non-coaxial relief layer, different modes of lasing of the VCSEL array unit are achieved, and the wavelength of the long-wavelength VCSEL is adjustable, the manufacturing process is simple, and at the same time, the problem that the current surface relief technology requires strict alignment of the surface relief center and the VCSEL table center during the design and preparation process is solved. The present application also provides a method for manufacturing a vertical cavity surface emitting laser with the above advantages.

Description

Technical Field

[0001] The application relates to the technical field of semiconductor lasers, and in particular to a vertical cavity surface emitting laser and a manufacturing method thereof. Background Art

[0002] Vertical-Cavity Surface-Emitting Laser (VCSEL) has the advantages of low threshold, high coupling efficiency, high modulation rate, good stability, etc. The 1550nm long wavelength VCSEL is widely used in long-distance high-speed optical interconnection systems, optical parallel processing, high-speed data communication, etc. With the increase in people's demand for information volume and information transmission speed, as well as the demand for gas detection, VCSEL is required to have a wavelength tunable function.

[0003] At present, in order to realize the wavelength tunable function of long-wavelength VCSEL, the methods used include external cavity tuning, electrothermal tuning, electrostatic force tuning, etc. The main principle is to change the thickness of the air gap cavity that constitutes the long-wavelength laser resonance to achieve the tunable lasing wavelength. The air gap resonance cavity requires the preparation of a suspended movable high-reflection mirror MEMS (Micro-Electro-Mechanical System) structure, which greatly increases the difficulty of preparing tunable long-wavelength vertical cavity surface emitting lasers. Due to the small refractive index difference and thermal conductivity formed by the material system of long-wavelength VCSEL, and the inability to form an oxidized confinement layer to effectively limit the light field and current, some researchers have proposed a wafer bonding long-wavelength VCSEL solution based on a quantum well structure and a buried tunnel junction long-wavelength VCSEL solution. Wafer bonding technology is to form a complete VCSEL laser by bonding the upper / lower Bragg reflectors, quantum well active regions and other laser structural units of the VCSEL. This technology is difficult, has high requirements for equipment, and has high operational difficulty; achieving light field and current limit by burying tunnel junctions requires a secondary epitaxial technology with extremely difficult coefficients.

[0004] Therefore, how to solve the above technical problems should be a focus of those skilled in the art. Summary of the invention

[0005] The object of this application is to provide a vertical cavity surface emitting laser and a production method thereof, so that the vertical cavity surface emitting laser has a wavelength tuning function while reducing the production difficulty.

[0006] In order to solve the above technical problems, the present application provides a vertical cavity surface emitting laser, including a first electrode, a substrate, a first reflector layer, a quantum dot layer, a first confinement layer, a transition layer, a doping layer, a second confinement layer, a second reflector layer, a relief layer, and a second electrode stacked in sequence from bottom to top, wherein proton implantation areas are distributed in the transition layer and the doping layer, the relief layer includes an etched area and an unetched area, and the intersection of a center line of the vertical cavity surface emitting laser and the relief layer is located in the etched area or in the unetched area.

[0007] Optionally, the relief layer is a contact layer.

[0008] Optionally, the embossed layer includes a contact layer and an optical dielectric layer stacked from bottom to top, and the optical dielectric layer includes the etching region and the unetched region.

[0009] Optionally, the optical dielectric layer is any one of a silicon dioxide layer, a titanium dioxide layer, a silicon nitride layer, and an alumina layer.

[0010] Optionally, the etching zone depth is an odd number of one quarter of the depth of the unetched zone.

[0011] Optionally, the doped layer includes a heavy duty p-doped layer and a heavy duty n-doped layer stacked from bottom to top.

[0012] The present application also provides a method for producing a vertical cavity surface emission laser, including:

[0013] The first mirror layer, a quantum dot layer, a first restriction layer, a transition layer, a doping layer, a second restriction layer, and a second reflector layer are successively epitaxially superimposed on the upper surface of the substrate;

[0014] forming a relief layer on the upper surface of the second reflector layer, wherein the relief layer includes an etched area and an unetched area, and an intersection point between a center line of the vertical cavity surface emitting laser and the relief layer is located in the etched area or in the unetched area;

[0015] Growing an implantation barrier layer on the area where the first reflector layer is not in contact with the quantum dot layer and on the upper surface of the relief layer, and bombarding the area where the second reflector layer is not covered by the implantation barrier layer with high-energy protons to form a proton implantation area in the transition layer and the doping layer;

[0016] removing the implant barrier layer;

[0017] A second electrode is made on the upper surface of the relief layer;

[0018] The substrate is ground and polished, and a first electrode is made on the lower surface of the substrate after polishing.

[0019] Optionally, the embossing layer is formed on the upper surface of the second reflector layer, the embossing layer including an etching region and an unetching region including:

[0020] The contact layer is grown on the upper surface of the second reflector layer;

[0021] A first mask layer is grown on an upper surface of the contact layer, and the contact layer is formed by lithography technology and the etched region and the unetched region.

[0022] Optionally, the embossing layer is formed on the upper surface of the second reflector layer, the embossing layer including an etching region and an unetching region including:

[0023] The contact layer is grown on the upper surface of the second reflector layer;

[0024] The optical dielectric layer is grown on the upper surface of the contact layer;

[0025] A second mask layer is grown on the upper surface of the optical dielectric layer, and the optical dielectric layer is formed by lithography technology and the etching region and the unetched region.

[0026] Optionally, the making of the first electrode on the lower surface of the polished substrate comprises:

[0027] The first electrode is made on the lower surface of the polished substrate by magnetron sputtering method.

[0028] A vertical cavity surface emitting laser provided in the present application includes a first electrode, a substrate, a first reflector layer, a quantum dot layer, a first confinement layer, a transition layer, a doping layer, a second confinement layer, a second reflector layer, a relief layer, and a second electrode stacked in sequence from bottom to top, wherein proton implantation areas are distributed in the transition layer and the doping layer, the relief layer includes an etched area and an unetched area, and the intersection of a center line of the vertical cavity surface emitting laser and the relief layer is located in the etched area or in the unetched area.

[0029] It can be seen that the vertical cavity surface emitting laser in the present application uses the quantum dot layer as the gain medium, and uses the proton implantation area to achieve the injection current limitation of the vertical cavity surface emitting laser and the internal light field limitation of the quantum dot layer. The relief layer including the etched area and the unetched area is made by the non-coaxial relief technology, the manufacturing process is simple, and the intersection of the center line of the vertical cavity surface emitting laser and the relief layer is located in the etched area or the unetched area, that is, the relief layer forms a layer on the surface of the vertical cavity surface emitting laser that is connected to the quantum dot layer, the first restriction layer, the transition layer, the doping layer, the second restriction layer, The combined table formed by the second reflector layer is in the non-coaxial high-loss and low-loss regions, achieving a huge difference in the threshold gain of the active area mode composed of the quantum dot layer corresponding to the high and low-loss regions, thereby realizing the mode selection function of the long-wavelength vertical cavity surface emitting laser. Each mode of the laser itself is accompanied by a specific output wavelength, so it is only necessary to introduce different offsets on the surface of the vertical cavity surface emitting laser, that is, the deviation between the center and the center line of the non-coaxial relief layer, to achieve the output of different wavelengths, so that the vertical cavity surface emitting laser can realize the tunable function.

[0030] In addition, the present application also provides a method for producing a vertical cavity surface emitting laser with the above advantages. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] In order to more clearly illustrate the embodiments of the present application or the technical solutions of the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0032] Figure 1 A structural diagram of a vertical cavity surface emitting laser provided for the embodiment of the present application;

[0033] Figure 2 A top view schematic diagram of a vertical cavity surface emitting laser provided for the embodiment of the present application;

[0034] Figure 3 It is a schematic diagram of a top-view structure of the second electrode and the embossed layer;

[0035] Figure 4 Another plan view of the second electrode and the embossed layer;

[0036] Figure 5 A structural diagram of another vertical cavity surface emitting laser provided for the embodiment of the present application;

[0037] Figure 6 A flowchart of a method for producing a vertical cavity surface emission laser provided for the embodiment of the present application;

[0038] Figure 7 This is a process diagram for preparing the proton implantation area. DETAILED DESCRIPTION

[0039] In order to enable those skilled in the art to better understand the present application, the present application is further described in detail below in conjunction with the accompanying drawings and specific implementation methods. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in the field without making creative work are within the scope of protection of the present application.

[0040] In the following description, many specific details are set forth to facilitate a full understanding of the present invention, but the present invention may also be implemented in other ways different from those described herein, and those skilled in the art may make similar generalizations without violating the connotation of the present invention. Therefore, the present invention is not limited to the specific embodiments disclosed below.

[0041] As described in the background technology section, in order to realize the wavelength tunable function of VCSEL, external cavity tuning, electrothermal tuning, electrostatic force tuning, wafer bonding technology, buried tunnel technology, etc. are currently used. However, due to the limitations of VCSEL formation materials and technology, it is difficult to prepare long-wavelength VCSELs with wavelength tuning function.

[0042] In view of this, this application provides a vertical cavity surface emitting laser. Please refer to Figure 1 and Figure 2 , Figure 1 A structural diagram of a vertical cavity surface emitting laser provided for the embodiment of the present application, Figure 2 A top view diagram of a vertical cavity surface emitting laser provided for the embodiment of the present application, the vertical cavity surface emitting laser is a long wavelength vertical cavity surface emitting laser of 1550 nm, including:

[0043] A first electrode 1, a substrate 2, a first reflector layer 3, a quantum dot layer 4, a first confinement layer 5, a transition layer 6, a doping layer 7, a second confinement layer 8, a second reflector layer 9, a relief layer, and a second electrode 13 are stacked in sequence from bottom to top, wherein a proton implantation area 14 is distributed in the transition layer 6 and the doping layer 7, the relief layer includes an etched area 12 and an unetched area 11, and the intersection of a center line of a vertical cavity surface emitting laser and the relief layer is located in the etched area 12 or in the unetched area 11.

[0044] The superposition layers of quantum dot layer 4, first confinement layer 5, transition layer 6, doping layer 7, second confinement layer 8, second reflector layer 9, relief layer and second electrode 13 form a columnar table on the upper surface of first reflector layer 3. Second electrode 13 is a ring electrode.

[0045] Specifically, the doped layer 7 includes a heavy duty p-doped layer 71 and a heavy duty n-doped layer 72 stacked from bottom to top.

[0046] The center line of the vertical cavity surface emitting laser is a vertical line passing through the centers of the first electrode 1, substrate 2, first reflector layer 3, quantum dot layer 4, first confinement layer 5, transition layer 6, doping layer 7, second confinement layer 8 and second reflector layer 9.

[0047] It should be noted that when one of the two regions of the etching region 12 and the unetching region 11 is circular, the shape of the other region is an annular shape surrounding the circular region. Please refer to Figure 3 , when the intersection point between the center line of the vertical cavity surface emitter laser and the embossed layer is located in the etching area 12, the embossed layer is an inverted structure; please refer to Figure 4 When the intersection of the center line of the VCSEL and the relief layer is located in the unetched area 11, the relief layer is in a normal phase structure. By adjusting the deviation between the non-coaxial relief center (the center of the etched area 12) and the center line, the VCSEL can output different wavelengths.

[0048] Optionally, the substrate 2 is an n-doped InP substrate 2, the first reflector layer 3 is an n-doped AlGaInAs / InP Bragg reflector layer, the quantum dot layer 4 is a multi-AlGaInAs quantum dot layer 4, the first confinement layer 5 is a p-doped InP confinement layer 5, the transition layer 6 is an n-doped InGaAs transition layer 6, the heavily p-doped layer 71 is a heavily p-doped InGaAs layer, the heavily n-doped layer 72 is a heavily n-doped InGaAs layer, the second confinement layer 8 is an n-doped InP confinement layer 8, and the second reflector layer 9 is an n-doped AlGaInAs / InP upper Bragg reflector layer.

[0049] In an embodied manner, the embossed layer is a contact layer, ie an etched region 12 and an unetched region 11 are distributed on the contact layer, and the contact layer may be an n-type doped InGaAs contact layer.

[0050] In another possible implementation, please refer to Figure 5 , the embossed layer includes a contact layer 10 and an optical dielectric layer stacked from bottom to top, and the optical dielectric layer includes the etching region 12 and the unetched region 11 .

[0051] It should be noted that the optical medium layer is not specifically limited in the present application and depends on the circumstances. Optionally, the optical medium layer is any one of a silicon dioxide layer, a titanium dioxide layer, a silicon nitride layer, an aluminum oxide layer, and the like.

[0052] The etching depth of the etching region 12 is determined by the material of the etching region 12 (ie, a contact layer or an optical dielectric layer), and the wavelength of the laser emitted by the vertical cavity surface.

[0053] Preferably, the depth of the etched area 12 is an odd multiple of one quarter of the depth of the unetched area 11. Light passing through the etched area 12 can form an anti-phase reflection, that is, a large optical loss is formed in the etched area 12, while the unetched area 11 still maintains the original low loss, so a large loss difference is formed between the etched area 12 and the unetched area 11, and a phase difference of π / 2 is formed between the etched area 12 and the unetched area 11, so that the reflectivity difference between the etched area 12 and the unetched area 11 reaches the maximum.

[0054] The vertical cavity surface emitting laser in the present application uses the quantum dot layer 4 as a gain medium, and uses the proton implantation area 14 to achieve the injection current limitation of the vertical cavity surface emitting laser and the internal light field limitation of the quantum dot layer 4. The relief layer including the etched area 12 and the unetched area 11 is made by non-coaxial relief technology, and the manufacturing process is simple. The intersection of the center line of the vertical cavity surface emitting laser and the relief layer is located in the etched area 12 or the unetched area 11, that is, the relief layer forms a layer on the surface of the vertical cavity surface emitting laser that is connected to the quantum dot layer 4, the first limiting layer 5, the transition layer 6, the doping layer 7, the first limiting layer 8, the transition layer 9, the doping layer 10, the first limiting layer 11, and the first limiting layer 12. The combined table formed by the second confinement layer 8 and the second reflector layer 9 is in the non-coaxial high-loss and low-loss regions, thereby achieving a huge difference in the threshold gain of the active area mode composed of the quantum dot layer 4 corresponding to the high and low-loss regions, and then realizing the mode selection function of the long-wavelength vertical cavity surface emitting laser. Each mode of the laser itself is accompanied by a specific output wavelength, so it is only necessary to introduce different offsets on the surface of the vertical cavity surface emitting laser, that is, the deviation between the center and the center line of the non-coaxial relief layer, to achieve the output of different wavelengths, so that the vertical cavity surface emitting laser can realize the tunable function.

[0055] This application also provides a method for producing a vertical cavity surface emission laser. Please refer to Figure 6 , the method comprising:

[0056] Step S101: The first reflector layer, a quantum dot layer, a first restriction layer, a transition layer, a doping layer, a second restriction layer, and a second reflector layer are sequentially superimposed on the upper surface of the substrate.

[0057] The quantum dot layer, the first confinement layer, the transition layer, the doping layer, the second confinement layer, the second reflector layer, the relief layer, and the superposition layer of the second electrode form a columnar table on the upper surface of the first reflector layer. The doping layer includes a heavy p-doped layer and a heavy n-doped layer stacked from bottom to top.

[0058] Specifically, a chemical vapor deposition method is used to epitaxially grow an n-doped AlGaInAs / InP Bragg reflector layer, a multi-AlGaInAs quantum dot layer, a p-doped InP confinement layer, an n-doped InGaAs transition layer, a heavily p-doped InGaAs layer, a heavily n-doped InGaAs layer, an n-type doped InP confinement layer, and an n-doped AlGaInAs / InP upper Bragg reflector layer in sequence on the upper surface of an n-doped InP substrate.

[0059] Step S102: forming a relief layer on the upper surface of the second reflector layer, wherein the relief layer comprises an etched area and an unetched area, and an intersection point between a center line of the vertical cavity surface emitting laser and the relief layer is located in the etched area or in the unetched area.

[0060] When the intersection of the center line of the vertical cavity surface emitting laser and the relief layer is located in the etched area, the relief layer is an inverted structure; when the intersection of the center line of the vertical cavity surface emitting laser and the relief layer is located in the unetched area, the relief layer is a normal structure. By adjusting the deviation between the non-coaxial relief center (the center of the etched area) and the center line, the vertical cavity surface emitting laser can output different wavelengths.

[0061] For the long-wavelength vertical-cavity surface-emitting laser with an inverting structure, the etched area is not covered by a mask after the photolithography process, while the unetched area is covered by a mask after the photolithography process; for the long-wavelength vertical-cavity surface-emitting laser with a normal structure, the unetched area needs to be covered by a mask after the photolithography process, while the etched area is not covered by a mask after the photolithography process.

[0062] The VCSEL with a normal phase structure forms an asymmetric annular groove around the unetched area, while the VCSEL with an anti-phase structure forms a concave hole in the etched area that is non-coaxial with the VCSEL table.

[0063] Optionally, in one embodiment of the present application, the embossing layer is formed on the upper surface of the second reflector layer, the embossing layer comprising an etching region and an unetching region including:

[0064] The contact layer is grown on the upper surface of the second reflector layer;

[0065] A first mask layer is grown on an upper surface of the contact layer, and the contact layer is formed by lithography technology and the etched region and the unetched region.

[0066] Specifically, the grown contact layer is an n-type doped InGaAs contact layer.

[0067] Optionally, in one embodiment of the present application, the embossing layer is formed on the upper surface of the second reflector layer, the embossing layer comprising an etching region and an unetching region including:

[0068] The contact layer is grown on the upper surface of the second reflector layer;

[0069] The optical dielectric layer is grown on the upper surface of the contact layer;

[0070] A second mask layer is grown on the upper surface of the optical dielectric layer, and the optical dielectric layer is formed by lithography technology and the etching region and the unetched region.

[0071] It should be noted that the optical medium layer grown in the present application is not specifically limited and depends on the circumstances. Optionally, the optical medium layer is any one of a silicon dioxide layer, a titanium dioxide layer, a silicon nitride layer, an aluminum oxide layer, and the like.

[0072] The etching depth of the etching region is determined by the material of the etching region (ie, the contact layer or the optical dielectric layer), and the wavelength of the laser emitted by the vertical cavity surface.

[0073] Preferably, the depth of the etched area is an odd multiple of one quarter of the depth of the unetched area. When light passes through the etched area, a reverse reflection is formed, that is, a large optical loss is formed in the etched area, while the unetched area still maintains the original low loss, so a large loss difference is formed between the etched area and the unetched area, and a phase difference of π / 2 is formed between the etched area and the unetched area, so that the reflectivity difference between the etched area and the unetched area reaches the maximum.

[0074] Step S103: growing an implantation barrier layer in the area where the first reflector layer is not in contact with the quantum dot layer and on the upper surface of the relief layer, and bombarding the area where the second reflector layer is not covered by the implantation barrier layer with high-energy protons to form a proton implantation area in the transition layer and the doping layer.

[0075] Please refer to Figure 7 , an implant barrier layer 14 is grown on the upper surface of the relief layer in the area where the first reflector layer is not in contact with the quantum dot layer, and high-energy protons are used to bombard the area 16 not covered by the implant barrier layer, so that the corresponding long-wavelength VCSEL epitaxial structure is damaged, destroying the electrical properties of the corresponding epitaxial structure, further causing the material refractive index to change, and realizing the optical and electrical confinement functions. The profile 15 of the columnar table is coaxial with the edge of the implant barrier layer 14 located on the outside, and the inner edge size of the implant barrier layer 14 located on the inside can be slightly smaller than the profile 15 of the columnar table.

[0076] Step S104: removing the implantation barrier layer.

[0077] Step S105: Make a second electrode on the upper surface of the relief layer.

[0078] Specifically, the second electrode is manufactured by using a surface metal film deposition process and a lift-off surface peeling process, and the specific manufacturing process is well known to those skilled in the art and will not be described in detail here. The second electrode is a ring electrode.

[0079] Step S106: Grind and polish the substrate, and make a first electrode on the lower surface of the substrate after polishing.

[0080] Optionally, the making of the first electrode on the lower surface of the polished substrate comprises:

[0081] The first electrode is made on the lower surface of the polished substrate by magnetron sputtering method.

[0082] The method for manufacturing a vertical cavity surface emitting laser provided in this embodiment uses a quantum dot layer as a gain medium, and uses a proton implantation region to achieve injection current limitation of the vertical cavity surface emitting laser and internal light field limitation of the quantum dot layer. The relief layer including the etched region and the unetched region is manufactured by a non-coaxial relief technology, and the manufacturing process is simple. The intersection of the center line of the vertical cavity surface emitting laser and the relief layer is located in the etched region or the unetched region, that is, the relief layer forms a layer on the surface of the vertical cavity surface emitting laser that is consistent with the quantum dot layer, the first limiting layer, the transition layer, the doping layer, the second limiting layer, and the like. The combined table formed by the first layer and the second reflector layer is in the non-coaxial high-loss and low-loss regions, realizing the huge difference in the threshold gain of the active area mode composed of the quantum dot layer corresponding to the high and low-loss regions, thereby realizing the mode selection of the long-wavelength vertical cavity surface emitting laser. Each mode of the laser is accompanied by a specific output wavelength, so it is only necessary to introduce different offsets on the surface of the vertical cavity surface emitting laser, that is, the deviation between the center and the center line of the non-coaxial relief layer, to achieve the output of different wavelengths and enable the vertical cavity surface emitting laser to achieve tunable function. It overcomes the existing wafer bonding technology and secondary epitaxial buried tunnel junction technology, avoids the difficulty of bonding technology and the requirements for equipment, and avoids the secondary epitaxy and buried tunnel junction with extremely high technical requirements. By introducing the offset of the non-coaxial relief, the VCSEL array unit can be lased in different modes, and the wavelength of the long-wavelength VCSEL can be further adjusted; the method of introducing the non-coaxial offset solves the problem that the current surface relief technology requires the surface relief center and the VCSEL table center to be strictly aligned during the design and device preparation process.

[0083] In this specification, each embodiment is described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the embodiments can be referred to each other. For the device disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant parts can be referred to the method part.

[0084] The vertical cavity surface emitting laser and its manufacturing method provided by the present application are introduced in detail above. Specific examples are used in this article to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method and its core idea of ​​the present application. It should be pointed out that for ordinary technicians in this technical field, without departing from the principles of the present application, several improvements and modifications can be made to the present application, and these improvements and modifications also fall within the scope of protection of the claims of the present application.

Claims

1. A vertical cavity surface emitting laser, characterized in that: The invention comprises a first electrode, a substrate, a first reflector layer, a quantum dot layer, a first confinement layer, a transition layer, a doping layer, a second confinement layer, a second reflector layer, a relief layer and a second electrode which are stacked in sequence from bottom to top. Proton implantation areas are distributed in the transition layer and the doping layer. The relief layer comprises an etched area and an unetched area. The intersection of a center line of a vertical cavity surface emitting laser and the relief layer is located in the etched area or in the unetched area. Different wavelengths are outputted by the deviation between the center of a non-coaxial relief layer and the center line.

2. The vertical cavity surface emitting laser according to claim 1, characterized in that: The relief layer is a contact layer.

3. The vertical cavity surface emitting laser according to claim 1, characterized in that: The relief layer includes a contact layer and an optical medium layer stacked from bottom to top, and the optical medium layer includes the etched area and the unetched area.

4. The vertical cavity surface emitting laser according to claim 3, characterized in that: The optical medium layer is any one of a silicon dioxide layer, a titanium dioxide layer, a silicon nitride layer, and an aluminum oxide layer.

5. The vertical cavity surface emitting laser according to any one of claims 1 to 4, characterized in that: The depth of the etched area is an odd multiple of one quarter of the depth of the unetched area.

6. The vertical cavity surface emitting laser according to claim 5, characterized in that: The doping layer includes a heavily p-doped layer and a heavily n-doped layer stacked from bottom to top.

7. A method for manufacturing a vertical cavity surface emitting laser, characterized in that: include: Epitaxially growing a first reflector layer, a quantum dot layer, a first confinement layer, a transition layer, a doping layer, a second confinement layer, and a second reflector layer in sequence on the upper surface of the substrate; forming a relief layer on the upper surface of the second reflector layer, wherein the relief layer includes an etched area and an unetched area, and an intersection point between a center line of the vertical cavity surface emitting laser and the relief layer is located in the etched area or in the unetched area; Growing an implantation barrier layer on the area where the first reflector layer is not in contact with the quantum dot layer and on the upper surface of the relief layer, and bombarding the area where the second reflector layer is not covered by the implantation barrier layer with high-energy protons to form a proton implantation area in the transition layer and the doping layer; removing the implant barrier layer; Making a second electrode on the upper surface of the relief layer; Grinding and polishing the substrate, and forming a first electrode on the lower surface of the polished substrate; Different wavelengths are output by the deviation of the center of the non-coaxial relief layer from the center line.

8. The method for manufacturing a vertical cavity surface emitting laser according to claim 7, characterized in that: The relief layer is formed on the upper surface of the second reflector layer, and the relief layer includes an etched area and an unetched area, including: said growing a contact layer on the upper surface of said second reflector layer; A first mask layer is grown on the upper surface of the contact layer, and the contact layer is formed into the etched area and the unetched area by using photolithography technology.

9. The method for manufacturing a vertical cavity surface emitting laser according to claim 7, characterized in that: The relief layer is formed on the upper surface of the second reflector layer, and the relief layer includes an etched area and an unetched area, including: said growing a contact layer on the upper surface of said second reflector layer; said growing an optical medium layer on the upper surface of said contact layer; A second mask layer is grown on the upper surface of the optical medium layer, and the optical medium layer is formed into the etched area and the unetched area by using photolithography technology.

10. The method for manufacturing a vertical cavity surface emitting laser according to any one of claims 7 to 9, characterized in that: The step of manufacturing the first electrode on the lower surface of the polished substrate comprises: The first electrode is manufactured on the lower surface of the polished substrate by using a magnetron sputtering method.

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